CN104475390A - Diode chip pickling technique and equipment - Google Patents
Diode chip pickling technique and equipment Download PDFInfo
- Publication number
- CN104475390A CN104475390A CN201410355331.7A CN201410355331A CN104475390A CN 104475390 A CN104475390 A CN 104475390A CN 201410355331 A CN201410355331 A CN 201410355331A CN 104475390 A CN104475390 A CN 104475390A
- Authority
- CN
- China
- Prior art keywords
- hydrogen peroxide
- ammoniacal liquor
- cleaning
- diode chip
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005554 pickling Methods 0.000 title claims abstract description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 114
- 238000004140 cleaning Methods 0.000 claims abstract description 63
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 57
- 239000002253 acid Substances 0.000 claims abstract description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 18
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 NH4+ ion Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Detergent Compositions (AREA)
Abstract
The invention relates to a diode chip pickling technique and equipment for realizing the pickling technique. The diode chip pickling technique includes mixed acid cleaning, acid and hydrogen peroxide cleaning, ammonia water and hydrogen peroxide cleaning, and water ultrasonic cleaning in sequence; the ammonia water and hydrogen peroxide mixed cleaning solution is composed of ammonia water, hydrogen peroxide and pure water, and the volume ratio of the ammonia water to hydrogen peroxide to pure water is 2: 1: 3-6. The equipment for realizing the diode chip pickling technique comprises a mixed acid cleaning section, an acid and hydrogen peroxide cleaning section, an ammonia water and hydrogen peroxide cleaning section and a water ultrasonic cleaning section arranged on a pickling machine in sequence. The diode chip pickling technique and equipment for realizing the pickling technique have advantages that when using the ammonia water with the set concentration to clean the surface of the chip, the number of free metal ions at the surface of the chip is greatly reduced, the electrical property of the diode is improved under a constant temperature and a high temperature, and the residual ammonia water cleaning is realized through the water ultrasonic cleaning.
Description
Technical field
The invention belongs to diode field, relate to a kind of diode chip for backlight unit acid cleaning process, also relating to a kind of equipment for realizing diode chip for backlight unit acid cleaning process.
Background technology
According to diode semiconductor production principle, when chip will play a role, have to pass through acid corrosion and sour passivation, the acid cleaning process of diode chip for backlight unit comprises mixed acid cleaning, and acid mixes with hydrogen peroxide cleans, and ammoniacal liquor mixes with hydrogen peroxide and cleans.
Originally two kinds of techniques were had, chromic acid process and ammoniacal liquor technique:
1. traditional chromic acid process, shortcoming is: use 6+ chromium, 6+ chromium is extremely toxic substance, and electrical properties in high temperatures is general;
2. ammoniacal liquor technique is low concentration ammonia water conservancy project skill, ammoniacal liquor, the volume ratio of hydrogen peroxide and pure water is 1:1:10, have complexing, heavy metal ion in energy complexing acid cleaning process, clean chip surface, thus reduce the free metal ion of chip surface, improve electrical property and electrical properties in high temperatures under normal temperature, shortcoming is: be difficult to cleaning, normal temperature, electrical properties in high temperatures is good, but the alkalescence of ammoniacal liquor causes being difficult to wash residual ammoniacal liquor with pure water cleaning in acid cleaning process, and there is NH4+ ion and cause secondary pollution in chip surface and weld blowhole place, thus make reduction electrical property, even poorer than chromic acid process.
In view of in ammoniacal liquor technique, need the electrical property improving diode once again, and can conveniently wash residual ammoniacal liquor, need to find a kind of new diode pickling Processes and apparatus.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of diode chip for backlight unit acid cleaning process and the equipment that can improve diode electrically performance.
For solving the problems of the technologies described above, technical scheme of the present invention is:
A kind of diode chip for backlight unit acid cleaning process, its innovative point is: described technique is followed successively by mixed acid cleaning, acid and hydrogen peroxide cleans, ammoniacal liquor and hydrogen peroxide cleans and water ultrasonic cleaning, described ammoniacal liquor and hydrogen peroxide to mix cleaning fluid be volume ratio is ammoniacal liquor, hydrogen peroxide and pure water, the volume ratio of described ammoniacal liquor, hydrogen peroxide and pure water is 2:1:3 ~ 6.
Further, the volume ratio of described ammoniacal liquor, hydrogen peroxide and pure water is 2:1:5.
Further, being configured to of described ammoniacal liquor, hydrogen peroxide and pure water: first add pure water, then add hydrogen peroxide, finally add ammoniacal liquor.
Further, the concentration of described ammoniacal liquor is 17%-20%, and described hydrogen peroxide concentration is 30%-35%.
For realizing an equipment for diode chip for backlight unit acid cleaning process, its innovative point is: be included in mixed acid cleaning section, acid and hydrogen peroxide that pickling machine sets gradually and clean cleaning section, ammoniacal liquor and hydrogen peroxide and clean cleaning section and water ultrasonic cleaning section; Described water ultrasonic cleaning section primarily of service sink, be arranged on track in service sink and ultrasonic generator composition, described track is respectively arc-shaped transition section A, horizontal segment and arc-shaped transition section B from left to right, described horizontal segment is arranged on the bottom of service sink, and parallel with service sink bottom surface.
The invention has the advantages that: the volume ratio of the ammoniacal liquor of improvement, hydrogen peroxide and pure water is 2:1:5, improve the concentration of ammoniacal liquor, when adopting the ammoniacal liquor of this concentration to clean chip surface, the free metal ion of chip surface is reduced greatly, improve electrical property and electrical properties in high temperatures under diode normal temperature, and by water ultrasonic cleaning technique, solve the cleaning problem of residual ammoniacal liquor.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of diode chip for backlight unit pickler of the present invention.
Fig. 2 is the structural representation of the water ultrasonic cleaning section of a kind of diode chip for backlight unit pickler of the present invention.
Detailed description of the invention
embodiment one
A kind of diode chip for backlight unit acid cleaning process of the present invention is as follows, and first, mixed acid cleans, and cleaning fluid volume consists of HNO
3: HF:CH
3cOOH: H
2sO
4:=9: 9: 12:4; Then, acid and hydrogen peroxide clean, cleaning fluid volume composition H
3pO
4: H
2o
2: H
2o=1:1:3; Subsequently, ammoniacal liquor and hydrogen peroxide clean, cleaning fluid volume composition NH
3: H
2o
2: H
2o
2=2:1:3; Last water ultrasonic cleaning, cleaning liquid composition H
2o;
Being configured to of ammoniacal liquor, hydrogen peroxide and pure water: first add pure water, then add hydrogen peroxide, finally add ammoniacal liquor, wherein the concentration of ammoniacal liquor is 17%, and hydrogen peroxide concentration is 30%.
As depicted in figs. 1 and 2, a kind of equipment for realizing above-mentioned diode chip for backlight unit acid cleaning process, is included in mixed acid cleaning section 1, acid and hydrogen peroxide that pickling machine sets gradually and cleans cleaning section 2, ammoniacal liquor and hydrogen peroxide and clean cleaning section 3 and water ultrasonic cleaning section 4; Water ultrasonic cleaning section primarily of service sink 5, be arranged on track in service sink and ultrasonic generator composition, track is respectively arc-shaped transition section A6, horizontal segment 7 and arc-shaped transition section B8 from left to right, horizontal segment 7 is arranged on the bottom of service sink 5, and parallel with service sink 5 bottom surface, make diode chip for backlight unit soak completely with service sink 5 in carry out ultrasonic cleaning.
During use, diode chip for backlight unit is cleaned cleaning section 2, ammoniacal liquor and hydrogen peroxide through mixed acid cleaning section 1, acid and hydrogen peroxide successively and cleans cleaning section 3 and water ultrasonic cleaning section 4, complete pickling.
embodiment two
The difference of the present embodiment and embodiment one is:
A kind of diode chip for backlight unit acid cleaning process is as follows, and first, mixed acid cleans, and cleaning fluid volume consists of HNO
3: HF:CH
3cOOH: H
2sO
4:=9: 9: 12:4; Then, acid and hydrogen peroxide clean, cleaning fluid volume group H
3pO
4: H
2o
2: H
2o=1:1:3; Subsequently, ammoniacal liquor and hydrogen peroxide clean, cleaning fluid volume composition NH
3: H
2o
2: H
2o
2=2:1:5; Finally, water ultrasonic cleaning, cleaning liquid composition H
2o;
Being configured to of ammoniacal liquor, hydrogen peroxide and pure water: first add pure water, then add hydrogen peroxide, finally add ammoniacal liquor, wherein the concentration of ammoniacal liquor is 17%, and hydrogen peroxide concentration is 30%.
embodiment three
The difference of the present embodiment and embodiment one is:
A kind of diode chip for backlight unit acid cleaning process is as follows, and mixed acid cleans, and cleaning fluid volume consists of HNO
3: HF:CH
3cOOH: H
2sO
4:=9: 9: 12:4; Acid and hydrogen peroxide clean, cleaning fluid volume group H
3pO
4: H
2o
2: H
2o=1:1:3; Ammoniacal liquor and hydrogen peroxide clean, cleaning fluid volume composition NH
3: H
2o
2: H
2o
2=2:1:6; Water ultrasonic cleaning, cleaning liquid composition H
2o;
Being configured to of ammoniacal liquor, hydrogen peroxide and pure water: first add pure water, then add hydrogen peroxide, finally add ammoniacal liquor, wherein the concentration of ammoniacal liquor is 17%, and hydrogen peroxide concentration is 30%.
Gluing to be carried out roasting and shaping roasting after diode chip for backlight unit cleaning, following table is above-described embodiment one, embodiment two and embodiment three improve after ammoniacal liquor and the effectiveness comparison that cleans of hydrogen peroxide cleaning fluid, the result drawn after respectively electric performance test being carried out to 1000 products:
Can find out in upper table, the mixing cleaning fluid of the ammoniacal liquor after improvement and hydrogen peroxide with ammoniacal liquor used at present compared with the mixing cleaning fluid of hydrogen peroxide, the gluing diathermy yield mixing the product that cleaning fluid obtains and the shaping diathermy yield of the ammoniacal liquor after improvement and hydrogen peroxide are high, and the volume ratio of ammoniacal liquor, hydrogen peroxide and pure water is when being 2:1:5, gluing diathermy yield and the shaping diathermy yield of product are better.
Claims (5)
1. a diode chip for backlight unit acid cleaning process, it is characterized in that: described technique is followed successively by mixed acid cleaning, acid and hydrogen peroxide cleans, ammoniacal liquor and hydrogen peroxide cleans and water ultrasonic cleaning, described ammoniacal liquor is ammoniacal liquor, hydrogen peroxide and pure water with the cleaning fluid that mixes of hydrogen peroxide, and the volume ratio of described ammoniacal liquor, hydrogen peroxide and pure water is 2:1:3 ~ 6.
2. the acid cleaning process of a kind of diode chip for backlight unit according to claim 1, is characterized in that: the volume ratio of described ammoniacal liquor, hydrogen peroxide and pure water is 2:1:5.
3. the acid cleaning process of a kind of diode chip for backlight unit according to claim 1, is characterized in that: being configured to of described ammoniacal liquor, hydrogen peroxide and pure water: first add pure water, then adds hydrogen peroxide, finally add ammoniacal liquor.
4. the acid cleaning process of a kind of diode chip for backlight unit according to claim 1, is characterized in that: the concentration of described ammoniacal liquor is 17%-20%, and described hydrogen peroxide concentration is 30%-35%.
5. for realizing an equipment for diode chip for backlight unit acid cleaning process according to claim 1, it is characterized in that: be included in mixed acid cleaning section, acid and hydrogen peroxide that pickling machine sets gradually and clean cleaning section, ammoniacal liquor and hydrogen peroxide and clean cleaning section and water ultrasonic cleaning section; Described water ultrasonic cleaning section primarily of service sink, be arranged on track in service sink and ultrasonic generator composition, described track is respectively arc-shaped transition section A, horizontal segment and arc-shaped transition section B from left to right, described horizontal segment is arranged on the bottom of service sink, and parallel with service sink bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410355331.7A CN104475390A (en) | 2014-07-24 | 2014-07-24 | Diode chip pickling technique and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410355331.7A CN104475390A (en) | 2014-07-24 | 2014-07-24 | Diode chip pickling technique and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104475390A true CN104475390A (en) | 2015-04-01 |
Family
ID=52750068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410355331.7A Pending CN104475390A (en) | 2014-07-24 | 2014-07-24 | Diode chip pickling technique and equipment |
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| Country | Link |
|---|---|
| CN (1) | CN104475390A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428216A (en) * | 2015-11-20 | 2016-03-23 | 如皋市大昌电子有限公司 | Acid-washing process for diode chip |
| CN107393813A (en) * | 2017-09-08 | 2017-11-24 | 如皋市下原科技创业服务有限公司 | A kind of acid cleaning process of diode chip for backlight unit |
| CN108010833A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | For the mixed acid of diode cleaning, production method, diode cleaning method |
| CN108559661A (en) * | 2018-04-04 | 2018-09-21 | 济南卓微电子有限公司 | A kind of GPP chip cleaning solution and cleaning |
| CN108807172A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode production technology |
| CN110648901A (en) * | 2019-09-30 | 2020-01-03 | 俞烽 | Pickling method for manufacturing and processing semiconductor diode |
| CN111334809A (en) * | 2020-03-13 | 2020-06-26 | 宁波江丰电子材料股份有限公司 | Method for cleaning silver evaporation material |
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2014
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428216A (en) * | 2015-11-20 | 2016-03-23 | 如皋市大昌电子有限公司 | Acid-washing process for diode chip |
| CN107393813A (en) * | 2017-09-08 | 2017-11-24 | 如皋市下原科技创业服务有限公司 | A kind of acid cleaning process of diode chip for backlight unit |
| CN108010833A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | For the mixed acid of diode cleaning, production method, diode cleaning method |
| CN108010833B (en) * | 2017-12-01 | 2020-03-24 | 山东理工大学 | Mixed acid for cleaning diode, production method and diode cleaning method |
| CN108559661A (en) * | 2018-04-04 | 2018-09-21 | 济南卓微电子有限公司 | A kind of GPP chip cleaning solution and cleaning |
| CN108807172A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode production technology |
| CN108807172B (en) * | 2018-06-05 | 2021-04-27 | 济南固锝电子器件有限公司 | Semiconductor diode production process |
| CN110648901A (en) * | 2019-09-30 | 2020-01-03 | 俞烽 | Pickling method for manufacturing and processing semiconductor diode |
| CN110648901B (en) * | 2019-09-30 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | Pickling method for manufacturing and processing semiconductor diode |
| CN111334809A (en) * | 2020-03-13 | 2020-06-26 | 宁波江丰电子材料股份有限公司 | Method for cleaning silver evaporation material |
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Application publication date: 20150401 |