CN104916787A - Forming method of shielding structure, manufacturing apparatus of shielding structure and structure of organic electro-luminescence device, manufacturing method and manufacturing apparatus thereof - Google Patents
Forming method of shielding structure, manufacturing apparatus of shielding structure and structure of organic electro-luminescence device, manufacturing method and manufacturing apparatus thereof Download PDFInfo
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- CN104916787A CN104916787A CN201510111672.4A CN201510111672A CN104916787A CN 104916787 A CN104916787 A CN 104916787A CN 201510111672 A CN201510111672 A CN 201510111672A CN 104916787 A CN104916787 A CN 104916787A
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 238000005401 electroluminescence Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 claims abstract description 41
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims description 158
- 229910010272 inorganic material Inorganic materials 0.000 claims description 56
- 239000011147 inorganic material Substances 0.000 claims description 56
- 238000010276 construction Methods 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 37
- 238000009434 installation Methods 0.000 claims description 27
- 239000011368 organic material Substances 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 222
- 239000007789 gas Substances 0.000 description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 238000000231 atomic layer deposition Methods 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 238000010926 purge Methods 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 239000007800 oxidant agent Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 230000001590 oxidative effect Effects 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000012528 membrane Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- -1 organic compound organic compounds Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Provided is a forming method of shielding structure capable of preventing deterioration of organic compound of a lighting portion due to moisture, a manufacturing apparatus of the shielding structure and a structure of an organic electro-luminescence device, the manufacturing method and the manufacturing apparatus thereof. A device laminating portion (12) is covered with a first shielding film (18) of aluminum oxide formed through an ALD method, the first blocking film (18) is covered by an organic film (19) formed through a CVD method. Anisotropic etching is carried out on the organic film (19). The first shielding film (18) is covered by a second shielding film (20) of silicon nitride. The device laminating portion (12) comprises, sequentially laminated, an anode film (14), a lighting portion (15) containing organic compound and a cathode film (16).
Description
Technical field
The present invention relates to the formation method of hermetically-sealed construction, the manufacturing installation of hermetically-sealed construction and organic EL device structure, its manufacture method and manufacturing installation thereof.
Background technology
As the display of PC, movable equipment, in recent years, replace LCD (liquid crystal display (Liquid Crystal Display)), employ the display (hereinafter referred to as " OLED display ") with organic EL (organic electroluminescent (OrganicElectro-Luminescence)) device architecture.
In organic EL device structure, because organic compound organic compounds such as () Diamines self being applied with the illuminating part of voltage is luminous, so do not need backlight required in LCD; In addition, organic EL device structure is fast and present flexibility due to designs simplification, so OLED display is particularly most suitable for the display of the movable equipments such as mobile phone and then is most suitable for being used as the display of soft sexual type for the answer speed executing alive luminescence.
But, if the organic compound moisture absorption of organic EL device structure, deteriorated, even if situation worst applies voltage also to become not luminous, so need the illuminating part sealing including organic compounds to avoid and extraneous contact in organic EL device structure.Correspondingly, have employed following gimmick: the device laminated section diaphragm seal sealing employing anode stacked on the component driving circuit layer of TFT (thin-film transistor (Thin Film Transistor)) in organic EL device structure, illuminating part, negative electrode form avoided and environmental exposure.As diaphragm seal, use inoranic membrane such as silicon nitride (SiN) film, silicon oxynitride (SiON) film etc. that can be formed by CVD; Because the coverage rate of the film formed by CVD is low, so each layer of device laminated section is such as under there is fine-grained situation in the negative electrode of the superiors, this particulate can not be fully covered (particularly with diaphragm seal, bottom as the particulate of undercutting), result has a part for diaphragm seal be interrupted and can not prevent the worry of illuminating part moisture absorption.
Therefore, in recent years, following technology is proposed: as shown in Figure 4, the device laminated section 43 be made up of anode 40, illuminating part 41 and negative electrode 42 is reinstated organic film 44 with particulate P mono-cover, afterwards, organic film 44 inoranic membrane 45 is covered (for example, referring to patent documentation 1.)。In the technology that patent documentation 1 relates to, particulate P is buried by organic film 44, so do not need inoranic membrane 45 to cover the bottom of particulate P, even if the coverage rate of inoranic membrane 45 is low, a part for inoranic membrane 45 also can not be interrupted.
In addition, additionally provide following technology: as shown in Figure 5, between device laminated section 43 and organic film 44, arrange inoranic membrane 46 further, organic film 44 is worked as decoupling layer, thus, the technology related to than patent documentation 1 improves the advantage of sealing further.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Application Publication 2011-508374 publication
Summary of the invention
the problem that invention will solve
But, in order to ensure the conducting of anode 40, negative electrode 42 in organic EL device structure, need to remove in the end E of organic EL device structure organic film 44, inoranic membrane 45 and make anode 40, negative electrode 42 exposes.The end now existed due to organic film 44 is also exposed, so moisture is entered by the end of organic film 44, and this organic film 44 of moisture-inhibiting and arrive the worry of illuminating part 41.In addition, have negative electrode 42 between organic film 44 and illuminating part 41, negative electrode 42 is formed as film-form, compared to the materials application that sealing focuses on conductivity in negative electrode 42, so negative electrode 42 also has the effect preventing moisture-inhibiting deficiently.
In addition, if have particulate P by organic film 44 during inoranic membrane 45 film forming, or on negative electrode 42, have particulate P by when inoranic membrane 46 film forming, a part for the inoranic membrane 45,46 covering particulate P is then had to be interrupted and to produce gap, the moisture moisture-inhibiting organic film 44 entered by this gap and arrive the worry of illuminating part 41.That is, the organic compound of illuminating part is still had by the worry of moisture deterioration.
The object of the present invention is to provide can prevent the hermetically-sealed construction of the organic compound deterioration of the illuminating part caused by moisture form method, the manufacturing installation of hermetically-sealed construction and organic EL device structure, its manufacture method and manufacturing installation thereof.
for the scheme of dealing with problems
In order to achieve the above object, the feature of the formation method of hermetically-sealed construction of the present invention is, it is the formation method of the hermetically-sealed construction of device laminated section, described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode, the formation method of described hermetically-sealed construction has following steps: the 1st barrier film forming step, 1st barrier film of aforementioned device laminated section by the inorganic material formed by ALD method (Atomic LayerDeposition, atomic layer deposition method) is covered; Organic film forming step, is covered the organic film of aforementioned 1st barrier film with the organic material formed by isotropic film build method; Organic film etching step, is etched by anisotropic etching aforementioned organic film; And the 2nd barrier film forming step, the 2nd barrier film to the aforementioned 1st barrier film inorganic material of major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming aforementioned 1st barrier film.
In order to achieve the above object, the feature of the manufacturing installation of hermetically-sealed construction of the present invention is, it is the manufacturing installation of the hermetically-sealed construction of device laminated section, described device laminated section comprises the 1st electrode stacked gradually, include illuminating part and the 2nd electrode of organic compounds, 1st barrier film of aforementioned device laminated section by the inorganic material formed by ALD method is covered, the organic film of aforementioned 1st barrier film with the organic material formed by isotropic film build method is covered, aforementioned organic film is etched by anisotropic etching, the 2nd barrier film to the aforementioned 1st barrier film inorganic material of major general covers, the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming aforementioned 1st barrier film.
In order to achieve the above object, the feature of the manufacture method of organic EL device structure of the present invention is, it is the manufacture method of the organic EL device structure with device laminated section, described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode, the manufacture method of described organic EL device structure has following steps: the 1st barrier film forming step, is covered by the 1st barrier film of aforementioned device laminated section by the inorganic material formed by ALD method; Organic film forming step, is covered the organic film of aforementioned 1st barrier film with the organic material formed by isotropic film build method; Organic film etching step, is etched by anisotropic etching aforementioned organic film; And the 2nd barrier film forming step, the 2nd barrier film to the aforementioned 1st barrier film inorganic material of major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming aforementioned 1st barrier film.
In order to achieve the above object, the feature of organic EL device structure of the present invention is, it has the hermetically-sealed construction of device laminated section and this device laminated section of sealing; Described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode, aforementioned seal structure is by the 1st barrier film, stacked and form according to this order with the 2nd barrier film of a part of inorganic material at least covering described 1st barrier film of the inorganic material formed by ALD method, the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming aforementioned 1st barrier film, in the end of aforementioned organic EL device structure, aforementioned 1st barrier film and aforementioned 2nd barrier film closely sealed.
In order to achieve the above object, the feature of the manufacturing installation of organic EL device structure of the present invention is, it is the manufacturing installation of the organic EL device structure with device laminated section, described device laminated section comprises the 1st electrode stacked gradually, include illuminating part and the 2nd electrode of organic compounds, 1st barrier film of aforementioned device laminated section by the inorganic material formed by ALD method is covered, the organic film of aforementioned 1st barrier film with the organic material formed by isotropic film build method is covered, aforementioned organic film is etched by anisotropic etching, at least cover with the 2nd barrier film of inorganic material, the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming aforementioned 1st barrier film.
the effect of invention
According to the present invention, 1st barrier film of device laminated section by the inorganic material formed by ALD method is covered, because the coverage rate of the film formed by ALD method is high, even if so have foreign matter on device laminated section, 1st barrier film also can cover this foreign matter and can not be interrupted, and moisture can not be entered by the gap of the 1st barrier film.In addition, the organic film of 1st barrier film with the organic material formed by isotropic film build method is covered, this organic film is etched by anisotropic etching, afterwards, the 2nd barrier film to major general the 1st barrier film inorganic material covers, in the end of the 1st barrier film, the 2nd barrier film, organic film is removed by etching, so between the 1st barrier film and the 2nd barrier film not sandwiched organic film, thus the 1st barrier film and the 2nd barrier film closely sealed, moisture can not be entered by the end of organic film.As a result, the deterioration of the organic compound of the illuminating part caused by moisture can be prevented.
Accompanying drawing explanation
Fig. 1 is the profile of the formation of the organic EL device structure that embodiments of the present invention are schematically described.
Fig. 2 is the profile of the formation of the manufacturing installation of the organic EL device structure schematically representing the hermetically-sealed construction forming Fig. 1.
Fig. 3 is the process chart of the formation method of the hermetically-sealed construction of present embodiment.
Fig. 4 schematically illustrates the existing profile with the formation of the organic EL device structure of hermetically-sealed construction.
Fig. 5 schematically illustrates the existing profile with the formation of the organic EL device structure of other hermetically-sealed constructions.
description of reference numerals
P particulate
12 device laminated sections
13 hermetically-sealed constructions
18 the 1st barrier films
19 organic films
20 the 2nd barrier films
Embodiment
Below, embodiments of the present invention limit is described with reference to accompanying drawing limit.
First, the organic EL device structure for the 1st execution mode of the present invention is described.The organic EL device structure of present embodiment configures multiple on luminescent panel, and each organic EL device structure is by luminous respectively, and this luminescent panel works as display, ligthing paraphernalia.
Fig. 1 is the profile of the formation of the organic EL device structure that embodiments of the present invention are schematically described.
In Fig. 1, organic EL device structure 10 has: the device laminated section 12 that substrate 11 is formed and the hermetically-sealed construction 13 formed in the mode covering this device laminated section 12.
Device laminated section 12 comprises: the anode film 14 (the 1st electrode) stacked gradually from substrate 11 side, the illuminating part 15 and the cathodic coating 16 (the 2nd electrode) that comprise the organic compounds such as such as Diamines; The organic compound of illuminating part 15 is luminous due to the combination again from anode film 14, cathodic coating 16 injected holes, electronics.
Anode film 14 is formed by the film of the ito film such as formed by spatter film forming method (tin indium oxide).Cathodic coating 16 is the work function films that are little, that formed by the metal be easily oxidized formed by frame mask evaporation process, such as, formed by the film of aluminium, silver-colored magnesium alloy etc.Illuminating part 15 comprises the film of the organic compound formed by FMM (fine metal mask (Fine Metal Mask)) vapour deposition method, specifically, comprise: the stepped construction of the luminescent layer of hole injection layer, hole transmission layer, organic compound, electron transfer layer, electron injecting layer.The organic compound of illuminating part 15 is adjusted to and sends redness, green, any one blue light, so device laminated section 12 sends redness, green, any one blue light.
In addition, the memory bank 17 that the mode that device laminated section 12 has to surround illuminating part 15 is formed, such as formed by resin.Memory bank 17 limits the position of illuminating part 15 and around illuminating part 15, makes anode film 14 and cathodic coating 16 insulate.
Hermetically-sealed construction 13 comprises: with the mode of direct covering device laminated section 12, by ALD (ald (Atomic Layer Deposition)) method formed by inorganic material such as aluminium oxide (Al
2o
3) the 1st barrier film 18 that formed; To cover the mode of the 1st barrier film 18, the organic film 19 formed by organic material by the such as vapour deposition method formation of isotropic film forming gimmick; With, to cover the mode of organic film 19, the 2nd barrier film 20 formed by inorganic material such as silicon nitride (SiN) by the formation of CVD (chemical vapour deposition (CVD) (Chemical Vapor Deposition)) method.
In ALD method, such as, make trimethyl aluminium (TMA) gas and H
2o gas, ozone (O
3) oxidant reactant gas such as gas, form aluminium oxide (Al
2o
3) film time, by the TMA molecule that moves while not there is directivity and oxidizer molecule, repeatedly carry out TMA molecule to by the adsorption and oxidation of film forming matter, pile up the molecule of aluminium oxide thus layer by layer, therefore, it is possible to isotropically (coverage rate with high) forms very thin diaphragm seal.Therefore, the whole face of the particulate P be present on device laminated section 12 can fully be covered by the 1st barrier film 18 of the hermetically-sealed construction 13 formed by ALD method without interruption.
As shown in the formation method of hermetically-sealed construction described later, in hermetically-sealed construction 13, before formation the 2nd barrier film 20, anisotropic etching is carried out to organic film 19, therefore except around particulate P, organic film 19 is removed, at the end E of organic EL device structure 10, not sandwiched organic film 19 between the 1st barrier film 18 and the 2nd barrier film 20, thus the 1st barrier film 18 and the 2nd barrier film 20 mutually closely sealed.
In addition, at the end E of organic EL device structure 10, the memory bank 17 of device laminated section 12 is removed, and anode film 14 is extended to the end E of side, and cathodic coating 16 is extended to the end E of opposite side.At each end E, hermetically-sealed construction 13 does not fully cover anode film 14, cathodic coating 16, thus anode film 14, cathodic coating 16 expose, and can guarantee the conducting with external power source.It should be noted that, between the contact-making surface that anode film 14, cathodic coating 16 and the 1st barrier film 18, substrate 19 are mutually closely sealed, there is sufficient sealing effectiveness, even if so anode film 14, cathodic coating 16 expose from hermetically-sealed construction 13, the sealing effectiveness of organic EL device structure 10 entirety also can not be damaged.
By organic EL device structure 10,1st barrier film 18 of device laminated section 12 by the inorganic material formed by ALD method is covered, because the coverage rate of the film formed by ALD method is high, even if so have particulate P on device laminated section 12,1st barrier film 18 also interruptedly can cover this particulate P, and moisture also can not be entered by the gap of the 1st barrier film 18.In addition, in hermetically-sealed construction 13, at end E, not sandwiched organic film 19 between the 1st barrier film 18 and the 2nd barrier film 20, thus the 1st barrier film 18 and the 2nd barrier film 20 closely sealed, moisture can not be entered by the end of organic film 19.As a result, the deterioration of the organic compound of the illuminating part 15 caused by moisture can be prevented.
And then, hermetically-sealed construction 13 owing to have between 2 inorganic material films (the 1st barrier film 18, the 2nd barrier film 20) the sandwiched sandwich structure of organic film 19, so have flexibility.As a result, use flexible base material as substrate 11, thus can the luminescent panel of manufacturing flexible.
It should be noted that, in above-mentioned organic EL device structure 10, the 2nd barrier film 20 can be formed by CVD, also can form the 2nd barrier film 20 by ALD method.
Fig. 2 is the profile of the formation of the manufacturing installation of the organic EL device structure schematically representing the hermetically-sealed construction forming Fig. 1.
The manufacturing installation 21 of Fig. 2 possesses: can by the chamber 22 of the housing shape of inner pressure relief; Be configured at the bottom of this chamber 22 and load the mounting table 23 being formed with the substrate 11 of organic EL device structure 10; The inside face of chamber 22 configure to mounting table 23 ground and the battery lead plate 24 of ground connection; Inorganic material gas supply part 25, the supply of its inside to chamber 22 for the formation of the inorganic material of barrier film gas such as: for the formation of trimethylaluminum gas, the oxidant gas of the 1st barrier film 18, and for the formation of the silicon tetrafluoride (SiF of the 2nd barrier film 20
4) gas; Inside supply to chamber 22 forms the organic material gas supply part 26 of the organic material gas of organic film 19; To the inside supply purge gas such as nitrogen (N of chamber 22
2) purge gas supply unit 27; To the inside supply etching gas such as oxygen (O of chamber 22
2) oxygen supply unit 28; And, to the exhaust apparatus 29 that the inside of chamber 22 is exhausted.
Preferably such feed system is formed: use H in manufacturing installation 21
2o gas, ozone gas etc. as oxidant gas, by the supply source of trimethylaluminum gas and H
2these two supply sources of supply source of the oxidant gas such as O gas or ozone gas are connected with inorganic material gas supply part 25, can alternately supply trimethylaluminum gas and oxidant gas.In addition, when forming the 2nd barrier film 20 with silicon tetrafluoride gas and nitrogen, can by the nitrogen supplied by purge gas supply unit 27 one of material gas being also used as the 2nd barrier film 20, but also can be, the supply source of the nitrogen independent of purge gas supply unit 27 is connected with inorganic material gas supply part 25, thus supplies the mist of silicon tetrafluoride gas and nitrogen to chamber 22.In addition, when needing multiple material gas in the formation of organic film 19, in organic material gas supply part 26, be preferably set up in parallel/connect multiple organic material gas feed unit.
Mounting table 23 is connected with high frequency electric source 30.In manufacturing installation 21, high frequency electric source 30 applies High frequency power to mounting table 23, makes to produce electric field between mounting table 23 and battery lead plate 24, generates plasma by each gas.Anisotropic etching or CVD film forming is carried out with the plasma generated.It should be noted that, mounting table 23 and not shown DC power supply, other high frequency electric source are connected, and can apply bias voltage.
When manufacturing installation 21 forms the 1st barrier film 18 of hermetically-sealed construction 13, supply trimethylaluminum gas and oxidant gas by inorganic material gas supply part 25 alternately to the inside of chamber 22, make trimethylaluminum gas and oxidant reactant gas by ALD method and formed and wrap salic 1st barrier film 18.Now, also can be, in order to prevent trimethylaluminum gas, oxidant gas residues in not shown gas supply system between inorganic material gas supply part 25 and chamber 22 and these gas reactions and generate deposit, further, the supply source of gas supply part 25 and purge gas such as nitrogen is connected, to gas supply system supply nitrogen, supply to carry out gas between the supply and the supply of oxidant gas of trimethylaluminum gas the purging being.
In addition, manufacturing installation 21 is when forming the organic film 19 of hermetically-sealed construction 13, supplying the gas of organic material by organic material gas supply part 26 to the inside of chamber 22, carrying out chemical reaction between different organic materials by applying heat, apply the free radical of the plasma produced by the gas comprising organic material and carry out the CVD such as chemical reaction and form organic film 19; When forming the 2nd barrier film 20, by the inside supply silicon tetrafluoride gas of inorganic material gas supply part 25 to chamber 22, and by the inside supply nitrogen of purge gas supply unit 27 to chamber 22, use the free radical of the plasma produced by silicon tetrafluoride gas, nitrogen, formed the 2nd barrier film 20 comprising silicon nitride by CVD.It should be noted that, also can form the 2nd barrier film 20 by ALD method aluminium oxide in the same manner as the 1st barrier film 18.
And then, manufacturing installation 21 is before formation the 2nd barrier film 20, when the organic film 19 of hermetically-sealed construction 13 is etched, by the inside oxygen gas-supplying of oxygen supply unit 28 to chamber 22, with the oxonium ion in the oxygen plasma produced by oxygen, anisotropic etching is carried out to organic film 19.Now, in order to anisotropically introduce oxonium ion to mounting table 23, bias voltage is applied to mounting table 23.It should be noted that, when etching organic film 19, in order to the etching optimization by organic film 19, also can add CF to as in the oxygen of etching gas
4gas, Cl
2gas, H
2gas etc.
Adopt manufacturing installation 21, due to the 1st barrier film 18 of hermetically-sealed construction 13, organic film 19 and the 2nd barrier film 20 can be formed in the inside of same chamber 22, so between formation the 1st barrier film 18 to formation the 2nd barrier film 20, do not need substrate 11 to be inputted chamber 22, from chamber 22 output substrate 11, the possibility that the particulate P along with the input and output of substrate 11 adheres to can be reduced, thereby, it is possible to reduce the quantity of the particulate P be present between the 1st barrier film 18 and organic film 19, between organic film 19 and the 2nd barrier film 20 significantly.
It should be noted that, manufacturing installation 21 is for possessing the plasma processing apparatus of the mounting table 23 that is applied with High frequency power and the parallel plate-type towards the battery lead plate 24 of this mounting table 23; The formation of manufacturing installation 21 is not limited thereto, also can be to battery lead plate 24 supply high frequency electric power and the plasma processing apparatus of the parallel plate-type of mounting table 23 ground connection, or can also be to mounting table 23 and battery lead plate 24 plasma processing apparatus by the parallel plate-type of common high frequency electric source or respective high frequency electric source supply high frequency electric power, and then can also for using the plasma processing apparatus of ICP.
Fig. 3 is the process chart of the formation method of the hermetically-sealed construction of present embodiment.It should be noted that, the formation method of the hermetically-sealed construction of Fig. 3 to have premised on particulate P on device laminated section 12, even if when there is not particulate P on device laminated section 12, the formation method of the hermetically-sealed construction of Fig. 3 also can be used to form hermetically-sealed construction 13.In the manufacturing process of organic EL device structure 10, be difficult to the presence or absence confirming particulate P according to the manufacture degree of organic EL device structure 10, if but the formation method particulate P of the hermetically-sealed construction of present embodiment exists, and can prevent the generation of the defect caused by particulate P, on the other hand, even if particulate P does not exist can not cause any baneful influence yet; Not equal to can sealing effectiveness be improved.
In Fig. 3, first, the substrate 11 device laminated section 12 having particulate P is placed in the mounting table 23 ((A) of Fig. 3) of manufacturing installation 21.
Then, reduce pressure with the inside of exhaust apparatus 29 pairs of chambers 22, trimethylaluminum gas and oxidant gas is supplied alternately to the inside of chamber 22 by inorganic material gas supply part 25, make trimethylaluminum gas and oxidant reactant gas by ALD method, form salic 1st barrier film 18 ((B) of Fig. 3) (the 1st barrier film forming step) of bag.Now, the whole face of the particulate P be present on device laminated section 12 can not interruptedly fully cover by the 1st barrier film 18.
Then, after purge gas supply unit 27 supplies nitrogen and purges the inside of chamber 22, supplying the gas of organic material by organic material gas supply part 26 to the inside of chamber 22, carrying out chemical reaction between different organic materials by applying heat, apply the free radical of the plasma produced by the gas comprising organic material and carry out the CVD such as chemical reaction and form organic film 19 ((C) of Fig. 3) (organic film forming step).Because organic film in CVD 19 is isotropically formed, so the surface configuration that the surface configuration of the part of the covering particulate P of organic film 19 presents the particulate P that sends as an envoy to only offsets the surface configuration of the 1st barrier film 18 or organic film 19 thickness degree.
Then, after purge gas supply unit 27 supplies the inside of nitrogen purging chamber 22, by the inside oxygen gas-supplying of oxygen supply unit 28 to chamber 22, with the oxonium ion in the oxygen plasma produced by oxygen, organic film 19 is etched (organic film etching step).Now, bias voltage is applied to mounting table 23 and oxonium ion is introduced into mounting table 23, so organic film 19 is by anisotropically (in figure only downwards to) etching ((D) of Fig. 3).As a result, because particulate P works as mask, so when watching device laminated section 12 by top, the organic film 19 at the position hidden by particulate P is not etched.
In addition, in the etching of organic film 19, because the aluminium oxide forming the 1st barrier film 18 is difficult etching, thus the 1st barrier film 18 as etching block film work, can protection device laminated section 12 thus prevent device laminated section 12 due to cross etching sustain damage.
And then, as mentioned above, the etching of organic film 19 is anisotropic etchings, so organic film 19 is removed with maintaining its surface configuration, in present embodiment, when organic film 19 is removed in fact by anisotropic etching, namely, except the position existed except there being particulate P organic film 19 be removed and the 1st barrier film 18 exposes time, stop the etching of organic film 19.Thus, during from top viewing device laminated section 12, the organic film 19 at the position hidden by particulate P can not be crossed be etched, and organic film 19 residues in around particulate P effectively, and the organic film 19 near result particulate P presents flecky surface configuration.Under supposing the complete non-existent situation of particulate P, when organic film 19 is removed in fact by anisotropic etching, organic film 19 is fully removed and the 1st barrier film 18 exposes.
It should be noted that, the stopping of etching is according to the result of the emission spectroanalysis of plasma, elapsed time of anisotropic etching and implementing.
Then, after purge gas supply unit 27 supplies nitrogen and purges the inside of chamber 22, by the inside supply silicon tetrafluoride gas of inorganic material gas supply part 25 to chamber 22, and by the inside supply nitrogen of purge gas supply unit 27 to chamber 22, use the free radical of the plasma generated by silicon tetrafluoride gas, nitrogen, formed the 2nd barrier film 20 ((E) of Fig. 3) (the 2nd barrier film forming step) comprising silicon nitride by CVD.It should be noted that, nitrogen also can can't help purge gas supply unit 27 but supplied by the part of inorganic material gas supply part 25 as the mist mixed with silicon tetrafluoride gas.In addition, also the 2nd barrier film 20 can be formed by ALD method by aluminium oxide in the same manner as the 1st barrier film 18.In this situation, owing to not needing the supply source of silicon tetrafluoride gas, so the device can making manufacturing installation 21 is more simply formed.
Now, by residual organic film 19, present flecky surface configuration near particulate P, even if so the coverage rate of the 2nd barrier film 20 is low, the 2nd barrier film 20 also can not cover particulate P with being interrupted.In addition, beyond near particulate P, to be removed and the 1st barrier film 18 exposes by etching organic film 19, so not sandwiched organic film 19 between the 1st barrier film 18 and the 2nd barrier film 20, thus the 1st barrier film 18 and the 2nd barrier film 20 closely sealed.
By the formation method of the hermetically-sealed construction of present embodiment, the etching of organic film 19 is stopped when the 1st barrier film 18 exposes, so sandwiched organic film 19 between the 1st barrier film 18 and the 2nd barrier film 20 beyond can preventing near particulate P, can make the 1st barrier film 18 and the 2nd barrier film closely sealed effectively, can prevent moisture from being entered by the end of organic film 19.
On the other hand, because etching is anisotropic etching, so the organic film 19 at the position hidden by particulate P residues in around particulate P effectively, this residual organic film 19 suppresses the movement of particulate P, can prevent the defect of the 1st barrier film 18 caused by the movement of particulate P.
Above, for the present invention, use the respective embodiments described above to be illustrated, but the present invention is not limited to the respective embodiments described above.
Claims (12)
1. the formation method of a hermetically-sealed construction, it is characterized in that, it is the formation method of the hermetically-sealed construction of device laminated section, and described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode, and the formation method of described hermetically-sealed construction has following steps:
1st barrier film forming step, is covered the 1st barrier film of described device laminated section by the inorganic material formed by ALD method;
Organic film forming step, is covered the organic film of described 1st barrier film with the organic material formed by isotropic film build method;
Organic film etching step, is etched by anisotropic etching described organic film; And
2nd barrier film forming step, the 2nd barrier film to the 1st barrier film inorganic material described in major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming described 1st barrier film.
2. the formation method of hermetically-sealed construction according to claim 1, is characterized in that, in described organic film etching step, when described 1st barrier film exposes, described 1st barrier film protects described device laminated section.
3. the formation method of hermetically-sealed construction according to claim 1 and 2, is characterized in that, described 1st barrier film, described organic film and described 2nd barrier film form hermetically-sealed construction,
In the end of described hermetically-sealed construction, described 1st barrier film and described 2nd barrier film closely sealed.
4. the formation method of the hermetically-sealed construction according to any one in claims 1 to 3, is characterized in that, before described 1st barrier film forming step, described device laminated section has foreign matter,
In described 1st barrier film forming step, described foreign matter is covered by described 1st barrier film.
5. the formation method of hermetically-sealed construction according to claim 4, is characterized in that, in described organic film etching step, described organic film is removed with maintaining its surface configuration, and described organic film only residues in the surrounding of described foreign matter thus keeps described foreign matter.
6. the formation method of the hermetically-sealed construction according to any one in Claims 1 to 5, is characterized in that, described 2nd barrier film is formed by ALD method.
7. a manufacturing installation for hermetically-sealed construction, is characterized in that, it is the manufacturing installation of the hermetically-sealed construction of device laminated section, and described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode,
1st barrier film of described device laminated section by the inorganic material formed by ALD method is covered,
The organic film of described 1st barrier film with the organic material formed by isotropic film build method is covered,
Described organic film is etched by anisotropic etching,
The 2nd barrier film to the 1st barrier film inorganic material described in major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming described 1st barrier film.
8. the manufacture method of an organic EL device structure, it is characterized in that, it is the manufacture method of the organic EL device structure with device laminated section, described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode, and described manufacture method has following steps:
1st barrier film forming step, is covered the 1st barrier film of described device laminated section by the inorganic material formed by ALD method;
Organic film forming step, is covered the organic film of described 1st barrier film with the organic material formed by isotropic film build method;
Organic film etching step, is etched by anisotropic etching described organic film; And
2nd barrier film forming step, the 2nd barrier film to the 1st barrier film inorganic material described in major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming described 1st barrier film.
9. an organic EL device structure, is characterized in that, it has the hermetically-sealed construction of device laminated section and this device laminated section of sealing; Described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode,
Described hermetically-sealed construction is by the 1st barrier film, stacked and form according to this order with the 2nd barrier film of inorganic material of a part at least covering described 1st barrier film of the inorganic material formed by ALD method, the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming described 1st barrier film
In the end of described organic EL device structure, described 1st barrier film and described 2nd barrier film closely sealed.
10. organic EL device structure according to claim 9, is characterized in that, described device laminated section has foreign matter, and described foreign matter is covered by described 1st barrier film.
11. organic EL device structures according to claim 10, is characterized in that, and then organic film exists only in the surrounding of described foreign matter thus keeps described foreign matter.
The manufacturing installation of 12. 1 kinds of organic EL device structures, is characterized in that, it is the manufacturing installation of the organic EL device structure with device laminated section, and described device laminated section comprises the 1st electrode stacked gradually, the illuminating part including organic compounds and the 2nd electrode,
1st barrier film of described device laminated section by the inorganic material formed by ALD method is covered,
The organic film of described 1st barrier film with the organic material formed by isotropic film build method is covered,
Described organic film is etched by anisotropic etching,
The 2nd barrier film to the 1st barrier film inorganic material described in major general covers, and the inorganic material of described 2nd barrier film is identical or different with the inorganic material forming described 1st barrier film.
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| JP2014-051694 | 2014-03-14 | ||
| JP2014051694A JP6374188B2 (en) | 2014-03-14 | 2014-03-14 | Method for forming sealing structure, manufacturing apparatus for sealing structure, manufacturing method for organic EL element structure, and manufacturing apparatus therefor |
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| JP6374188B2 (en) | 2018-08-15 |
| TW201547081A (en) | 2015-12-16 |
| CN104916787B (en) | 2017-06-20 |
| JP2015176717A (en) | 2015-10-05 |
| KR20150107648A (en) | 2015-09-23 |
| TWI674690B (en) | 2019-10-11 |
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