CN104904024A - 使用发光蓝宝石作为下转换器的led - Google Patents

使用发光蓝宝石作为下转换器的led Download PDF

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Publication number
CN104904024A
CN104904024A CN201480005094.XA CN201480005094A CN104904024A CN 104904024 A CN104904024 A CN 104904024A CN 201480005094 A CN201480005094 A CN 201480005094A CN 104904024 A CN104904024 A CN 104904024A
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CN
China
Prior art keywords
sapphire
light
led
luminous
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480005094.XA
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English (en)
Chinese (zh)
Inventor
G.F.F.德尼斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to CN202010564496.0A priority Critical patent/CN111697119A/zh
Publication of CN104904024A publication Critical patent/CN104904024A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
CN201480005094.XA 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led Pending CN104904024A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010564496.0A CN111697119A (zh) 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361753175P 2013-01-16 2013-01-16
US61/753175 2013-01-16
US201361831244P 2013-06-05 2013-06-05
US61/831244 2013-06-05
PCT/IB2014/058016 WO2014111822A1 (en) 2013-01-16 2014-01-02 Led using luminescent sapphire as down-converter

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010564496.0A Division CN111697119A (zh) 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led

Publications (1)

Publication Number Publication Date
CN104904024A true CN104904024A (zh) 2015-09-09

Family

ID=49955454

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480005094.XA Pending CN104904024A (zh) 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led
CN202010564496.0A Pending CN111697119A (zh) 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010564496.0A Pending CN111697119A (zh) 2013-01-16 2014-01-02 使用发光蓝宝石作为下转换器的led

Country Status (7)

Country Link
US (2) US20160027969A1 (enExample)
EP (1) EP2946409B1 (enExample)
JP (1) JP6622090B2 (enExample)
KR (1) KR102145647B1 (enExample)
CN (2) CN104904024A (enExample)
RU (1) RU2686862C2 (enExample)
WO (1) WO2014111822A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804196A (zh) * 2016-10-17 2019-05-24 亮锐控股有限公司 具有夹紧的光转换器的光转换装置
CN110419108A (zh) * 2016-12-22 2019-11-05 亮锐有限责任公司 具有用于操作反馈的传感器节段的发光二极管

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US9528876B2 (en) * 2014-09-29 2016-12-27 Innovative Science Tools, Inc. Solid state broad band near-infrared light source
US10217914B2 (en) * 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
TWI644454B (zh) * 2015-08-19 2018-12-11 佰鴻工業股份有限公司 Light-emitting diode structure
JP2018022844A (ja) 2016-08-05 2018-02-08 日亜化学工業株式会社 発光装置及び発光装置の製造方法
US10957825B2 (en) 2017-09-25 2021-03-23 Lg Innotek Co., Ltd. Lighting module and lighting apparatus having thereof
KR102553496B1 (ko) * 2017-11-21 2023-07-10 루미레즈 엘엘씨 컬러 오류 보정된 세그먼트화된 led 어레이

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WO2001037351A1 (en) * 1999-11-19 2001-05-25 Cree Lighting Company Multi color solid state led/laser
CN101834253A (zh) * 2010-05-06 2010-09-15 上海大学 氧化锌叠层电极氮化镓基大功率发光二极管及其制备方法
CN102157655A (zh) * 2011-02-28 2011-08-17 浙江大学 基于钛酸锶/p型硅异质结的电致发光器件及制备方法

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JPH11307813A (ja) * 1998-04-03 1999-11-05 Hewlett Packard Co <Hp> 発光装置、その製造方法およびディスプレイ
JP4151284B2 (ja) * 2001-03-05 2008-09-17 日亜化学工業株式会社 窒化物半導体発光素子及び発光装置並びにそれらの製造方法
RU2202843C2 (ru) * 2001-04-27 2003-04-20 Институт проблем химической физики РАН Полупроводниковый электролюминесцентный источник света с перестраиваемым цветом свечения
JP2002344021A (ja) * 2001-05-16 2002-11-29 Nichia Chem Ind Ltd 発光装置
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JP2004253743A (ja) * 2003-02-21 2004-09-09 Nichia Chem Ind Ltd 付活剤を含有した基板を用いた発光装置
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CN101834253A (zh) * 2010-05-06 2010-09-15 上海大学 氧化锌叠层电极氮化镓基大功率发光二极管及其制备方法
CN102157655A (zh) * 2011-02-28 2011-08-17 浙江大学 基于钛酸锶/p型硅异质结的电致发光器件及制备方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804196A (zh) * 2016-10-17 2019-05-24 亮锐控股有限公司 具有夹紧的光转换器的光转换装置
US10808910B2 (en) 2016-10-17 2020-10-20 Lumileds Llc Light converting device with clamped light converter
CN109804196B (zh) * 2016-10-17 2021-01-19 亮锐控股有限公司 具有夹紧的光转换器的光转换装置
CN110419108A (zh) * 2016-12-22 2019-11-05 亮锐有限责任公司 具有用于操作反馈的传感器节段的发光二极管
CN110419108B (zh) * 2016-12-22 2023-10-27 亮锐有限责任公司 具有用于操作反馈的传感器节段的发光二极管

Also Published As

Publication number Publication date
EP2946409B1 (en) 2019-12-18
RU2686862C2 (ru) 2019-05-06
KR20150110611A (ko) 2015-10-02
KR102145647B1 (ko) 2020-08-19
US20160027969A1 (en) 2016-01-28
RU2015134352A (ru) 2017-02-21
EP2946409A1 (en) 2015-11-25
US10181551B2 (en) 2019-01-15
US20160254420A1 (en) 2016-09-01
JP6622090B2 (ja) 2019-12-18
CN111697119A (zh) 2020-09-22
JP2016508294A (ja) 2016-03-17
WO2014111822A1 (en) 2014-07-24

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TA01 Transfer of patent application right

Effective date of registration: 20180402

Address after: Holland Schiphol

Applicant after: LUMILEDS HOLDING B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150909