CN104901635A - Low-noise PSSR amplifier circuit - Google Patents
Low-noise PSSR amplifier circuit Download PDFInfo
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- CN104901635A CN104901635A CN201510313431.8A CN201510313431A CN104901635A CN 104901635 A CN104901635 A CN 104901635A CN 201510313431 A CN201510313431 A CN 201510313431A CN 104901635 A CN104901635 A CN 104901635A
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Abstract
The invention discloses a low-noise PSSR amplifier circuit. The low-noise PSSR amplifier circuit is constructed by connecting a current source connected with a common source, and a three-stage amplifier, wherein the current source is a cascade current source consisting of field-effect tubes P2, P3, P6, P7, N5 and N6, and is connected with a load; the first amplifier is provided with differential pair transistors consisting of field-effect tubes M1 and M2; the load consists of a resistor R1 and a resistor R2; one end of the resistor R1 is connected with a VSS potential point, and the other end of the resistor R1 is coupled with the source electrode of the field-effect tube N5 and the drain electrode of the field-effect tube M1; one end of the resistor R2 is connected with the VSS potential point, and the other end of the resistor R2 is coupled with the drain electrode of the field-effect tube N6 and the drain electrode of the field-effect tube M2; the common gates of the field-effect tubes N5 and N6 are connected with the drain electrode of the field-effect tube N5; and the drain electrodes of the two field-effect tubes are connected to the differential input end of a second-stage amplifier respectively. The low-noise PSSR amplifier circuit has the beneficial effects that the parallel resistors are adopted by the load, so that the noise coefficient is improved; the characteristic of low noise is realized; the power supply rejection ratio of a circuit is increased remarkably; and the cost is low.
Description
Technical field
The present invention relates to a kind of low noise PSSR amplifier circuit, belong to integrated electronic circuit design field.
Background technology
In cmos amplifier design, low noise is the difficult point of design always.Thermal noise and flicker noise is contained in cmos device, in order to high-gain, wide input common mode, usually application Foldable cascade design in first order amplifier, in this design, current source noise accounting in noise list is very large, increases its area and less mutual conductance all needs pay performance cost and raise the cost.
Summary of the invention
In view of the defect that above-mentioned prior art exists, the object of the invention is to propose a kind of low noise PSSR amplifier circuit.
In order to achieve the above object, the technical solution adopted in the present invention is: a kind of low noise PSSR amplifier circuit, the current source connected by common source, first order amplifier, second level amplifier and third level amplifier connect and form, wherein said current source is the cascode current source that is made up of field effect transistor P2, field effect transistor P3, field effect transistor P6, field effect transistor P7, field effect transistor N5, field effect transistor N6 and is equipped with load, described first order amplifier has the differential pair tube be made up of field effect transistor M1 and field effect transistor M2
Especially, described load is made up of resistance R1 and resistance R2,
The one termination V of described resistance R1
sSpotential point, the other end of resistance R1 couples mutually with the drain electrode of the source electrode of field effect transistor N5 and field effect transistor M1,
The one termination V of described resistance R2
sSpoint site, the other end of resistance R2 and the drain electrode of the source electrode of field effect transistor N6 and field effect transistor M2 couple mutually,
Described field effect transistor N5 is connected with the drain electrode of field effect transistor N5 with the common gate of field effect transistor N6, and the drain electrode of two field effect transistor accesses the differential input end of second level amplifier respectively.
Further, in described current source, field effect transistor P2 is connected with field effect transistor P3 cascade, the drain electrode of field effect transistor P2 couples mutually with the source electrode of field effect transistor P6, the drain electrode of field effect transistor P6 couples mutually with the drain electrode of field effect transistor N5, and the drain electrode of field effect transistor P3 couples mutually with the source electrode of field effect transistor P7, and the drain electrode of field effect transistor P7 couples mutually with the drain electrode of field effect transistor N6, field effect transistor P6 and field effect transistor P7 altogether grid are connected, and field effect transistor N5 and field effect transistor N6 altogether grid are connected.
Further, described first order amplifier also comprises field effect transistor P1, and the drain electrode of described field effect transistor P1 couples mutually with the common source of field effect transistor M1, field effect transistor M2.
Further, described second level amplifier comprises field effect transistor P4, field effect transistor N7, field effect transistor N8, field effect transistor M21 and field effect transistor M22, the drain electrode of described field effect transistor P4 and field effect transistor M21, the common source of field effect transistor M22 couples mutually, the grid of described field effect transistor M21 and field effect transistor P7, the common drain of field effect transistor N6 couples mutually, the drain electrode of field effect transistor M21 and the drain electrode of field effect transistor N7, field effect transistor N7 couples mutually with the common gate of field effect transistor N8, the common drain of the grid of described field effect transistor M22 and the drain electrode of field effect transistor P6 and field effect transistor N5, field effect transistor N5 couples mutually with the common gate of field effect transistor N6, the drain electrode of field effect transistor M22 couples mutually with the drain electrode of field effect transistor N8, described field effect transistor N7 is connected V with the source electrode of field effect transistor N8
sSpotential point.
Further, the grid that described third level amplifier comprises the connected field effect transistor P5 of common leakage and field effect transistor M3, described field effect transistor M3 couples mutually with the common drain of field effect transistor M22 and field effect transistor N8, and the source electrode of field effect transistor M3 meets V
sSpotential point.
Beneficial effect of the present invention: load adopts resistance in parallel, improves Noise figure, has the feature of low noise, significantly improve the Power Supply Rejection Ratio of circuit, and with low cost.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of low noise PSSR of the present invention amplifier circuit.
Embodiment
As shown in Figure 1, a kind of low noise PSSR amplifier circuit, the current source connected by common source, first order amplifier, second level amplifier and third level amplifier connect formation, wherein current source is by field effect transistor P2, field effect transistor P3, field effect transistor P6, field effect transistor P7, field effect transistor N5, field effect transistor N6 composition cascode current source and be equipped with load, first order amplifier has the differential pair tube be made up of field effect transistor M1 and field effect transistor M2, load is made up of resistance R1 and resistance R2, resistance R1 and resistance R2 is parallel-connection structure, the noise characteristic of resistance is better than MOS device, so load can realize low noise, the one termination V of resistance R1
sSpotential point, the other end of resistance R1 couples mutually with the drain electrode of the source electrode of field effect transistor N5 and field effect transistor M1, a termination V of resistance R2
sSpoint site, the other end of resistance R2 couples mutually with the drain electrode of the source electrode of field effect transistor N6 and field effect transistor M2, field effect transistor N5 is connected with the drain electrode of field effect transistor N5 with the common gate of field effect transistor N6, and the drain electrode of two field effect transistor accesses the differential input end of second level amplifier respectively, the mode that field effect transistor N5 utilizes diode to be connected with the common gate of field effect transistor N6, can eliminate power supply noise impact.
Refinement current source of the present invention, field effect transistor P2 is connected with field effect transistor P3 cascade, the drain electrode of field effect transistor P2 couples mutually with the source electrode of field effect transistor P6, the drain electrode of field effect transistor P6 couples mutually with the drain electrode of field effect transistor N5, the drain electrode of field effect transistor P3 couples mutually with the source electrode of field effect transistor P7, the drain electrode of field effect transistor P7 couples mutually with the drain electrode of field effect transistor N6, and field effect transistor P6 and field effect transistor P7 altogether grid are connected, and field effect transistor N5 and field effect transistor N6 altogether grid are connected.
Be optimized first order amplifier, first order amplifier also comprises field effect transistor P1, and the drain electrode of field effect transistor P1 couples mutually with the common source of field effect transistor M1, field effect transistor M2.
Second level amplifier is optimized, second level amplifier comprises field effect transistor P4, field effect transistor N7, field effect transistor N8, field effect transistor M21 and field effect transistor M22, the drain electrode of field effect transistor P4 and field effect transistor M21, the common source of field effect transistor M22 couples mutually, the grid of field effect transistor M21 and field effect transistor P7, the common drain of field effect transistor N6 couples mutually, the drain electrode of field effect transistor M21 and the drain electrode of field effect transistor N7, field effect transistor N7 couples mutually with the common gate of field effect transistor N8, the common drain of the grid of field effect transistor M22 and the drain electrode of field effect transistor P6 and field effect transistor N5, field effect transistor N5 couples mutually with the common gate of field effect transistor N6, the drain electrode of field effect transistor M22 couples mutually with the drain electrode of field effect transistor N8, described field effect transistor N7 is connected V with the source electrode of field effect transistor N8
sSpotential point.
Be optimized third level amplifier, the grid that third level amplifier comprises the connected field effect transistor P5 of common leakage and field effect transistor M3, described field effect transistor M3 couples mutually with the common drain of field effect transistor M22 and field effect transistor N8, and the source electrode of field effect transistor M3 meets V
sSpotential point.
In addition to the implementation, the present invention can also have other execution mode, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop within the present invention's scope required for protection.
Claims (5)
1. a low noise PSSR amplifier circuit, the current source connected by common source, first order amplifier, second level amplifier and third level amplifier connect and form, wherein
Described current source is the cascode current source that is made up of field effect transistor P2, field effect transistor P3, field effect transistor P6, field effect transistor P7, field effect transistor N5, field effect transistor N6 and is equipped with load, described first order amplifier has the differential pair tube be made up of field effect transistor M1 and field effect transistor M2
It is characterized in that: described load is made up of resistance R1 and resistance R2,
The one termination V of described resistance R1
sSpotential point, the other end of resistance R1 couples mutually with the drain electrode of the source electrode of field effect transistor N5 and field effect transistor M1,
The one termination V of described resistance R2
sSpoint site, the other end of resistance R2 and the drain electrode of the source electrode of field effect transistor N6 and field effect transistor M2 couple mutually,
Described field effect transistor N5 is connected with the drain electrode of field effect transistor N5 with the common gate of field effect transistor N6, and the drain electrode of two field effect transistor accesses the differential input end of second level amplifier respectively.
2. a kind of low noise PSSR amplifier circuit according to claim 1, it is characterized in that: in described current source, field effect transistor P2 is connected with field effect transistor P3 cascade, the drain electrode of field effect transistor P2 couples mutually with the source electrode of field effect transistor P6, the drain electrode of field effect transistor P6 couples mutually with the drain electrode of field effect transistor N5, the drain electrode of field effect transistor P3 couples mutually with the source electrode of field effect transistor P7, the drain electrode of field effect transistor P7 couples mutually with the drain electrode of field effect transistor N6, field effect transistor P6 and field effect transistor P7 altogether grid are connected, and field effect transistor N5 and field effect transistor N6 altogether grid are connected.
3. a kind of low noise PSSR amplifier circuit according to claim 1, it is characterized in that: described first order amplifier also comprises field effect transistor P1, the drain electrode of described field effect transistor P1 couples mutually with the common source of field effect transistor M1, field effect transistor M2.
4. a kind of low noise PSSR amplifier circuit according to claim 1, it is characterized in that: described second level amplifier comprises field effect transistor P4, field effect transistor N7, field effect transistor N8, field effect transistor M21 and field effect transistor M22, the drain electrode of described field effect transistor P4 and field effect transistor M21, the common source of field effect transistor M22 couples mutually, the grid of described field effect transistor M21 and field effect transistor P7, the common drain of field effect transistor N6 couples mutually, the drain electrode of field effect transistor M21 and the drain electrode of field effect transistor N7, field effect transistor N7 couples mutually with the common gate of field effect transistor N8, the common drain of the grid of described field effect transistor M22 and the drain electrode of field effect transistor P6 and field effect transistor N5, field effect transistor N5 couples mutually with the common gate of field effect transistor N6, the drain electrode of field effect transistor M22 couples mutually with the drain electrode of field effect transistor N8, described field effect transistor N7 is connected V with the source electrode of field effect transistor N8
sSpotential point.
5. a kind of low noise PSSR amplifier circuit according to claim 1, it is characterized in that: described third level amplifier comprises common leakage connected field effect transistor P5 and field effect transistor M3, the grid of described field effect transistor M3 couples mutually with the common drain of field effect transistor M22 and field effect transistor N8, and the source electrode of field effect transistor M3 meets V
sSpotential point.
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| CN201510313431.8A CN104901635B (en) | 2015-06-10 | 2015-06-10 | A kind of low noise PSSR amplifier circuits |
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| CN201510313431.8A CN104901635B (en) | 2015-06-10 | 2015-06-10 | A kind of low noise PSSR amplifier circuits |
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| CN104901635B CN104901635B (en) | 2018-06-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104954943A (en) * | 2014-11-26 | 2015-09-30 | 成都冠深科技有限公司 | Phase shifting type audio processing system based on common-source amplifying circuit |
| CN107645280A (en) * | 2016-07-21 | 2018-01-30 | 成都锐成芯微科技股份有限公司 | High speed amplifying circuit |
| CN108683167A (en) * | 2018-07-03 | 2018-10-19 | 苏州锴威特半导体有限公司 | A kind of anti-surge circuit of PD equipment |
| WO2019024478A1 (en) * | 2017-08-01 | 2019-02-07 | 深圳市中移联半导体科技有限公司 | Amplifier device having ultrahigh power supply rejection ratio |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100237942A1 (en) * | 2009-03-19 | 2010-09-23 | Qualcomm Incorporated | Common-gate common-source amplifier |
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
-
2015
- 2015-06-10 CN CN201510313431.8A patent/CN104901635B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100237942A1 (en) * | 2009-03-19 | 2010-09-23 | Qualcomm Incorporated | Common-gate common-source amplifier |
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104954943A (en) * | 2014-11-26 | 2015-09-30 | 成都冠深科技有限公司 | Phase shifting type audio processing system based on common-source amplifying circuit |
| CN107645280A (en) * | 2016-07-21 | 2018-01-30 | 成都锐成芯微科技股份有限公司 | High speed amplifying circuit |
| WO2019024478A1 (en) * | 2017-08-01 | 2019-02-07 | 深圳市中移联半导体科技有限公司 | Amplifier device having ultrahigh power supply rejection ratio |
| CN108683167A (en) * | 2018-07-03 | 2018-10-19 | 苏州锴威特半导体有限公司 | A kind of anti-surge circuit of PD equipment |
| CN108683167B (en) * | 2018-07-03 | 2024-04-09 | 苏州锴威特半导体股份有限公司 | Anti-surge circuit of PD equipment |
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| CN104901635B (en) | 2018-06-19 |
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Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Applicant after: Scarlett Ruipu microelectronics technology (Suzhou) Limited by Share Ltd Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Applicant before: Scarlett Ruipu microelectronics technology (Suzhou) Co., Ltd. |
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