CN104885159B - 用于三态内容可寻址存储器(tcam)的静态nand单元 - Google Patents
用于三态内容可寻址存储器(tcam)的静态nand单元 Download PDFInfo
- Publication number
- CN104885159B CN104885159B CN201380068595.8A CN201380068595A CN104885159B CN 104885159 B CN104885159 B CN 104885159B CN 201380068595 A CN201380068595 A CN 201380068595A CN 104885159 B CN104885159 B CN 104885159B
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- CN
- China
- Prior art keywords
- pull
- transistor
- output
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- mask
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/730,524 US8958226B2 (en) | 2012-12-28 | 2012-12-28 | Static NAND cell for ternary content addressable memory (TCAM) |
| US13/730,524 | 2012-12-28 | ||
| PCT/US2013/076848 WO2014105683A1 (en) | 2012-12-28 | 2013-12-20 | Static nand cell for ternary content addressable memory (tcam) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104885159A CN104885159A (zh) | 2015-09-02 |
| CN104885159B true CN104885159B (zh) | 2019-04-19 |
Family
ID=49918923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380068595.8A Active CN104885159B (zh) | 2012-12-28 | 2013-12-20 | 用于三态内容可寻址存储器(tcam)的静态nand单元 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8958226B2 (https=) |
| EP (1) | EP2939240B1 (https=) |
| JP (2) | JP5866491B1 (https=) |
| KR (1) | KR101557883B1 (https=) |
| CN (1) | CN104885159B (https=) |
| TW (1) | TWI508069B (https=) |
| WO (1) | WO2014105683A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8891273B2 (en) | 2012-12-26 | 2014-11-18 | Qualcomm Incorporated | Pseudo-NOR cell for ternary content addressable memory |
| US8934278B2 (en) | 2012-12-28 | 2015-01-13 | Qualcomm Incorporated | Hybrid ternary content addressable memory |
| US8958226B2 (en) | 2012-12-28 | 2015-02-17 | Qualcomm Incorporated | Static NAND cell for ternary content addressable memory (TCAM) |
| US9374294B1 (en) | 2013-11-05 | 2016-06-21 | Cisco Technology, Inc. | On-demand learning in overlay networks |
| US9769078B2 (en) | 2013-11-05 | 2017-09-19 | Cisco Technology, Inc. | Dynamic flowlet prioritization |
| US9655232B2 (en) | 2013-11-05 | 2017-05-16 | Cisco Technology, Inc. | Spanning tree protocol (STP) optimization techniques |
| US9674086B2 (en) | 2013-11-05 | 2017-06-06 | Cisco Technology, Inc. | Work conserving schedular based on ranking |
| US9832122B2 (en) | 2013-11-05 | 2017-11-28 | Cisco Technology, Inc. | System and method for identification of large-data flows |
| US9502111B2 (en) * | 2013-11-05 | 2016-11-22 | Cisco Technology, Inc. | Weighted equal cost multipath routing |
| US10778584B2 (en) | 2013-11-05 | 2020-09-15 | Cisco Technology, Inc. | System and method for multi-path load balancing in network fabrics |
| US9543014B2 (en) | 2015-04-14 | 2017-01-10 | Bertrand F. Cambou | Memory circuits using a blocking state |
| US9804974B2 (en) | 2015-05-11 | 2017-10-31 | Bertrand F. Cambou | Memory circuit using dynamic random access memory arrays |
| EP3304561B1 (en) | 2015-06-02 | 2020-08-26 | Cambou, Bertrand, F. | Memory circuit using resistive random access memory arrays in a secure element |
| US9728258B1 (en) | 2016-10-04 | 2017-08-08 | National Tsing Hua University | Ternary content addressable memory |
| US9941008B1 (en) * | 2017-03-23 | 2018-04-10 | National Taiwan University | Ternary content addressable memory device for software defined networking and method thereof |
| CN110729013B (zh) | 2018-07-16 | 2021-10-29 | 蓝枪半导体有限责任公司 | 用于三态内容寻址存储器的控制电路 |
| KR102505089B1 (ko) | 2021-07-16 | 2023-02-28 | 연세대학교 산학협력단 | 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리 |
| KR102646177B1 (ko) | 2021-08-24 | 2024-03-12 | 서울대학교산학협력단 | 내용 주소화 메모리 장치 및 그 동작 방법 |
| US12243574B2 (en) | 2021-08-24 | 2025-03-04 | Seoul National University R&Db Foundation | Content addressable memory device and operating method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044005A (en) * | 1999-02-03 | 2000-03-28 | Sibercore Technologies Incorporated | Content addressable memory storage device |
| US20040001347A1 (en) * | 2002-06-28 | 2004-01-01 | Chul-Sung Park | Ternary content addressable memory device |
| US20050276086A1 (en) * | 2004-06-01 | 2005-12-15 | Douglas Perry | Ternary CAM cell for reduced matchline capacitance |
| US20090310395A1 (en) * | 2008-06-11 | 2009-12-17 | Realtek Semiconductor Corp. | Content-Addressable Memory |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6499081B1 (en) | 1999-02-23 | 2002-12-24 | Netlogic Microsystems, Inc. | Method and apparatus for determining a longest prefix match in a segmented content addressable memory device |
| US6574702B2 (en) | 1999-02-23 | 2003-06-03 | Netlogic Microsystems, Inc. | Method and apparatus for determining an exact match in a content addressable memory device |
| US6411538B1 (en) | 2000-11-28 | 2002-06-25 | Silicon Access Networks | Compact load-less static ternary CAM |
| US6400593B1 (en) * | 2001-02-08 | 2002-06-04 | Intregrated Device Technology, Inc. | Ternary CAM cell with DRAM mask circuit |
| US6385070B1 (en) | 2001-03-13 | 2002-05-07 | Tality, L.P. | Content Addressable Memory array, cell, and method using 5-transistor compare circuit and avoiding crowbar current |
| WO2003056564A1 (en) | 2001-12-28 | 2003-07-10 | Mosaid Technologies Incorporated | Low power content addressable memory architecture |
| US6768659B2 (en) | 2001-12-31 | 2004-07-27 | Mosaid Technologies Incorporated | Circuit and method for reducing power usage in a content addressable memory |
| TWI302706B (en) | 2002-01-31 | 2008-11-01 | Mosaid Technologies Inc | Circuit and method for reducing power usage in a content addressable memory |
| US6760242B1 (en) | 2002-04-10 | 2004-07-06 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein |
| US6906937B1 (en) | 2003-03-21 | 2005-06-14 | Netlogic Microsystems, Inc. | Bit line control circuit for a content addressable memory |
| US6900999B1 (en) | 2003-06-30 | 2005-05-31 | Integrated Device Technology, Inc. | Ternary content addressable memory (TCAM) cells with small footprint size and efficient layout aspect ratio |
| US7555594B2 (en) | 2004-07-22 | 2009-06-30 | Netlogic Microsystems, Inc. | Range representation in a content addressable memory (CAM) using an improved encoding scheme |
| US7050318B1 (en) | 2004-10-01 | 2006-05-23 | Netlogic Microsystems, Inc. | Selective match line pre-charging in a CAM device using pre-compare operations |
| US7286379B1 (en) | 2005-09-08 | 2007-10-23 | Lsi Corporation | Content addressable memory (CAM) architecture and method of operating the same |
| US7355890B1 (en) | 2006-10-26 | 2008-04-08 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having NAND-type compare circuits |
| US8125810B2 (en) | 2007-08-01 | 2012-02-28 | Texas Instruments Incorporated | Low power ternary content-addressable memory (TCAM) |
| US7633830B2 (en) | 2007-11-29 | 2009-12-15 | Agere Systems Inc. | Reduced leakage driver circuit and memory device employing same |
| US8169808B2 (en) | 2008-01-25 | 2012-05-01 | Micron Technology, Inc. | NAND flash content addressable memory |
| US7940541B2 (en) | 2008-05-21 | 2011-05-10 | Texas Instruments Incorporated | Bit cell designs for ternary content addressable memory |
| TWI391946B (zh) | 2008-09-18 | 2013-04-01 | Realtek Semiconductor Corp | 內容可定址記憶體 |
| WO2010138639A2 (en) | 2009-05-26 | 2010-12-02 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Longest prefix match internet protocol content addressable memories and related methods |
| US7907432B2 (en) | 2009-06-30 | 2011-03-15 | Netlogic Microsystems, Inc. | Content addressable memory device for simultaneously searching multiple flows |
| US8582338B1 (en) | 2010-08-31 | 2013-11-12 | Netlogic Microsystems, Inc. | Ternary content addressable memory cell having single transistor pull-down stack |
| US8891273B2 (en) | 2012-12-26 | 2014-11-18 | Qualcomm Incorporated | Pseudo-NOR cell for ternary content addressable memory |
| US8958226B2 (en) | 2012-12-28 | 2015-02-17 | Qualcomm Incorporated | Static NAND cell for ternary content addressable memory (TCAM) |
| US8934278B2 (en) | 2012-12-28 | 2015-01-13 | Qualcomm Incorporated | Hybrid ternary content addressable memory |
-
2012
- 2012-12-28 US US13/730,524 patent/US8958226B2/en active Active
-
2013
- 2013-12-20 CN CN201380068595.8A patent/CN104885159B/zh active Active
- 2013-12-20 JP JP2015550689A patent/JP5866491B1/ja not_active Expired - Fee Related
- 2013-12-20 KR KR1020157020112A patent/KR101557883B1/ko not_active Expired - Fee Related
- 2013-12-20 WO PCT/US2013/076848 patent/WO2014105683A1/en not_active Ceased
- 2013-12-20 EP EP13818158.1A patent/EP2939240B1/en active Active
- 2013-12-26 TW TW102148453A patent/TWI508069B/zh not_active IP Right Cessation
-
2014
- 2014-10-01 US US14/503,861 patent/US9082481B2/en active Active
-
2016
- 2016-01-04 JP JP2016000278A patent/JP6062578B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044005A (en) * | 1999-02-03 | 2000-03-28 | Sibercore Technologies Incorporated | Content addressable memory storage device |
| US20040001347A1 (en) * | 2002-06-28 | 2004-01-01 | Chul-Sung Park | Ternary content addressable memory device |
| US20050276086A1 (en) * | 2004-06-01 | 2005-12-15 | Douglas Perry | Ternary CAM cell for reduced matchline capacitance |
| US20090310395A1 (en) * | 2008-06-11 | 2009-12-17 | Realtek Semiconductor Corp. | Content-Addressable Memory |
Also Published As
| Publication number | Publication date |
|---|---|
| US8958226B2 (en) | 2015-02-17 |
| JP2016106341A (ja) | 2016-06-16 |
| JP2016506591A (ja) | 2016-03-03 |
| KR101557883B1 (ko) | 2015-10-06 |
| TWI508069B (zh) | 2015-11-11 |
| US9082481B2 (en) | 2015-07-14 |
| US20140185349A1 (en) | 2014-07-03 |
| TW201440050A (zh) | 2014-10-16 |
| JP6062578B2 (ja) | 2017-01-18 |
| JP5866491B1 (ja) | 2016-02-17 |
| CN104885159A (zh) | 2015-09-02 |
| KR20150093245A (ko) | 2015-08-17 |
| US20150085554A1 (en) | 2015-03-26 |
| EP2939240A1 (en) | 2015-11-04 |
| EP2939240B1 (en) | 2016-08-17 |
| WO2014105683A1 (en) | 2014-07-03 |
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| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |