CN104876176A - Movable inductive electrode structure and production method - Google Patents
Movable inductive electrode structure and production method Download PDFInfo
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- CN104876176A CN104876176A CN201410073069.7A CN201410073069A CN104876176A CN 104876176 A CN104876176 A CN 104876176A CN 201410073069 A CN201410073069 A CN 201410073069A CN 104876176 A CN104876176 A CN 104876176A
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Abstract
The invention relates to a movable inductive electrode structure and a production method. The movable inductive electrode structure comprises an upper pole plate and a lower pole plate arranged vertically and separately as well as two electrode plates used for forming variable capacity in an MEMS (micro-electromechanical system), and planar spiral inductors are selected as both the upper pole plate and the lower pole plate so as to enable the upper pole plate and the lower pole plate to move mutually under the condition of energization. On one hand, the electrode structure can measure capacitance of the two pole plates like common capacitance so as to calculate the distance between the pole plates, and for an acceleration sensor, the acceleration can be calculated by conversion; on the other hand, magnetic induction current caused by approaching of the pole plates, namely speed of distance change of the capacitance plates, can be further measured, and change rate of motion acceleration is measured by conversion.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to one can dynamic inductance electrode structure and preparation method.
Background technology
Along with the development of semiconductor technology, on the market of sensor (motion sensor) series products, smart mobile phone, integrated CMOS and microelectromechanical systems (MEMS) device become most main flow, state-of-the-art technology day by day, and along with the renewal of technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and lower loss.
Microelectromechanical systems (MEMS) is in volume, power consumption, weight and have fairly obvious advantage in price, so far multiple different sensor has been developed, such as pressure sensor, acceleration transducer, inertial sensor and other sensor.
In prior art in described MEMS by the acceleration of top crown and bottom crown, displacement is produced after described sensing space (sensing space) perception, thus cause the change of electric capacity in described sensor, in order to prevent disturbing the test of described displacement and the change of electric capacity, X-axis, Y-axis and Z axis three axles are not integrated in MEMS, but respectively X-axis, Y-axis and Z axis difference (separately) are arranged on same wafer.
MEMS as described in Fig. 1 a comprises acceleration transducer 10 and pressure sensor 11, two parts, wherein said acceleration transducer 10 comprises displaceable member 101, described pressure sensor 11 comprises pressure sensing membrane 102, as shown in Figure 1 b, by applying DC voltage (VDC) and alternating voltage (AC) on top crown 104 and bottom crown 105 during described devices function, vibrating under pressure sensing membrane 102 electrostatic interaction above described pressure sensor 11 cavity 103, launching ultrasonic wave.When ultrasonic wave accepts ultrasonic pressure, pressure sensing membrane 102 vibrates, and causes the electric capacity between two electrodes to change, and as shown in Figure 2, this figure is the structural representation of variable capacitance battery lead plate in MEMS described in prior art.
Traditional MEMS inductor design mainly considers high quality factor (Q value), is the tunable micro-inductance of radio frequency.Radio frequency is tunable, and micro-inductance plays an important role current, and it can meet the requirement of compact high performance device layout.For device designer, controllable impedance energy tuning coil amount also can ensure higher or suitable quality factor (Q value).
MEMS great majority all can regard the design of variable capacitance as, such as, utilize electric capacity two-plate distance or area change to measure capacitance variations, or utilize two-plate electrostatic force that pole plate is attracted each other.Pressure sensor specifically, such design all used by acceleration transducer etc.But space often between capacitor plate, two-plate near after the electrostatic force of pole plate can not be leaned on to make it separately, a kind of spring structure can only be designed in addition capacitor board is resetted, cause complex structure, and integrated level reduces.Therefore, in order to improve the performance of device further, need to improve the battery lead plate of MEMS described in prior art.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention is in order to overcome current existing problems, and providing a kind of MEMS can dynamic inductance electrode structure, comprising:
Isolate top crown and the bottom crown of setting up and down, for the formation of two battery lead plates of variable capacitance in MEMS, wherein said top crown and described bottom crown all select planar spiral inductor, mutually move in energising situation to make described top crown and described bottom crown.
As preferably, described planar spiral inductor selects square spiral inductance coil or round screw thread inductance coil.
As preferably, describedly can also comprise independently inductance core by dynamic inductance electrode structure, described inductance core is positioned at the center of described planar spiral inductor.
As preferably, described inductance core is inductor wire.
As preferably, describedly can also comprise surface plate and lower plane plate by dynamic inductance electrode structure, described upper surface plate and described lower plane plate are that monoblock is arranged, and described top crown and described bottom crown are embedded in described upper surface plate and described lower plane plate respectively.
As preferably, described top crown with comprise two or more identical planar spiral inductor in described bottom crown.
As preferably, when being electrically connected the first link of described top crown and the first link corresponding to described bottom crown, be used for measuring the distance between described top crown and described bottom crown.
As preferably, be electrically connected the first link of described top crown, the second link, when being electrically connected the first link, second link of described bottom crown, motion mutually occur simultaneously between described top crown and described bottom crown.
As preferably, when described top crown is identical with inductive current in described bottom crown, described top crown and described bottom crown attract each other;
When in described top crown and described bottom crown, inductive current is contrary, described top crown and described bottom crown repel mutually.
As preferably, be electrically connected the first link of described bottom crown, the second link, measure the induced-current of reaction distance pace of change in the first link of described top crown, the second link.
The present invention also provides a kind of MEMS can the preparation method of dynamic inductance electrode structure, comprising:
There is provided Semiconductor substrate, be formed with bottom crown on the semiconductor substrate, described bottom crown is planar spiral inductor;
Described bottom crown forms sacrificial material layer;
Described sacrificial material layer forms top crown, and described top crown is planar spiral inductor;
Remove described sacrificial material layer, between described top crown and described bottom crown, form cavity.
As preferably, described method comprises:
There is provided Semiconductor substrate, be formed with lower plane plate and bottom crown on the semiconductor substrate, described bottom crown is embedded in described lower plane plate;
Sacrificial material layer on described lower plane plate and described bottom crown;
Described sacrificial material layer forms the flat sheet bed of material;
The flat sheet bed of material forms top crown material layer on described;
Top crown material layer described in patterning, to form the described top crown of planar spiral inductor;
Described in patterning, the upper flat sheet bed of material and described top crown, to form opening, expose described sacrificial material layer;
Remove described sacrificial material layer.
As preferably, described method is also included on described lower plane plate and described bottom crown after sacrificial material layer, sacrificial material layer described in patterning, to remove the described sacrificial material layer of part on one end, exposes described lower plane plate;
And the flat sheet bed of material and described top crown on patterning, to form opening, expose one end that described sacrificial material layer does not etch.
As preferably, described method continues the described upper flat sheet bed of material of deposition after being also included in and forming described top crown, to form upper surface plate, covers described top crown.
As preferably, described method is also included on described lower plane plate and described bottom crown after sacrificial material layer, sacrificial material layer described in patterning, to form opening at two ends, expose described lower capacity substrate, in the middle of described sacrificial material layer, form groove simultaneously;
The flat sheet bed of material and top crown material layer on being formed in described groove;
Capacitive plate material layer described in patterning and described top crown material layer, to form the top crown of planar spiral inductor;
Continue the upper flat sheet bed of material of deposition, to form upper surface plate, cover described top crown.
The present invention is in order to solve problems of the prior art, providing a kind of new MEMS can dynamic inductance electrode structure, novel capacitor board structure is adopted in described electrode structure, inductance is incorporated in the design of movable capacitor board, two inductance can move mutually in the energized state, add the identical sense of current to the inductance on two-plate, produce the magnetic field of equidirectional and two-plate attracts each other.Meanwhile, also can apply anti-phase electric current and push two-plate open.Thus solve two-plate in prior art near after the electrostatic force of pole plate can not be leaned on to make it separate problem.
On the one hand, the electric capacity that can survey two-plate as conventional capacitive calculates pole plate distance, namely can be converted into acceleration for acceleration transducer for electrode structure of the present invention.On the other hand, can also record because pole plate is near the induced field current caused, i.e. the speed of capacitor plate distance change, by the pace of change measuring acceleration of motion that converts.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1b is the structural representation of MEMS described in prior art;
Fig. 2 is the structural representation of variable capacitance battery lead plate in MEMS described in prior art;
Fig. 3 a-3e is the structural representation of variable capacitance battery lead plate in MEMS described in prior art;
Fig. 4 a-4h is the present invention one MEMS described in embodiment and preparation process schematic diagram particularly;
Fig. 5 a-5e is the preparation process schematic diagram of another MEMS described in embodiment particularly of the present invention;
Fig. 6 a-6f is the present invention another MEMS described in embodiment and preparation process schematic diagram thereof particularly;
Fig. 7 is another process chart of preparing of MEMS described in embodiment particularly of the present invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed description is proposed, so that the preparation method of single chip micro-computer electric system of the present invention to be described.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, and use the element that identical Reference numeral represents identical, thus will omit description of them.
The present invention is in order to solve problems of the prior art, providing a kind of new MEMS can dynamic inductance electrode structure, novel capacitor board structure is adopted in described electrode structure, inductance is incorporated in the design of movable capacitor board, two inductance can move mutually in the energized state, add the identical sense of current to the inductance on two-plate, produce the magnetic field of equidirectional and two-plate attracts each other.Meanwhile, also can apply anti-phase electric current and push two-plate open.Thus solve two-plate in prior art near after the electrostatic force of pole plate can not be leaned on to make it separate problem.
Below in conjunction with accompanying drawing, structure of the present invention is further described.
Embodiment 1
Be further described described electrode structure below in conjunction with Fig. 3 a-3e, wherein 3a-3e is respectively the top view of described battery lead plate, and the figure wherein on the right side of 3a is the side view of described electrode structure.
The present invention, in order to solve problems of the prior art, to change in prior art common monoblock capacitor plate as battery lead plate variable in MEMS, and MEMS the full wafer pole plate of dynamic condenser can be become ring-type Winding Design and form inductance.
Particularly, in MEMS variable capacitance, top crown 204 and bottom crown 202 all select planar spiral inductor as two battery lead plates of variable capacitance in described MEMS, mutually move in energising situation to make described top crown and described bottom crown.
Wherein, described spiral inductor shape can be square coil, as shown in figure on the left of Fig. 3 a, or can also be circular coil, as shown in Figure 3 c, can select the pattern of other the formed inductance beyond square, circle in addition.Be not limited to above-mentioned two kinds of examples, other shapes such as such as triangle or polygon etc. can also be selected.
As preferably, inductance core can also be provided with in the middle of the top crown and bottom crown of described spiral inductor, wherein said inductance core arranges the centre with described spiral inductor, as shown in Figure 3 b, it is positioned at the center of described spiral inductor, independent setting, and described spiral inductor is mutually isolated; Described inductance core is preferably a section lead with described spiral inductor with same material, but is not limited to this example.
As preferably, have a cavity between the top crown 204 of described MEMS variable capacitance and bottom crown 202, the air in described cavity is as the dielectric medium of described variable capacitance, and as preferably, identical spiral inductor selected by described top crown 204 and bottom crown 202.
Further, described MEMS variable capacitance electrode plate structure also comprises surface plate and lower plane plate further, described upper surface plate and described lower plane plate are that monoblock is arranged, can select common monoblock capacitor plate in prior art, wherein said top crown and described bottom crown are embedded in described upper surface plate and described lower plane plate respectively.
Described in the effect of wherein said capacitor plate and described lower plane plate and prior art, the effect of battery lead plate is different, described capacitor plate and described lower plane plate play the effect fixing and support described top crown 204 and bottom crown 202 in the present invention, can't be energized at described capacitor plate and described lower plane plate, thus can select conductive material, can also non-conducting material be selected.
Described spiral inductor can two terminations electricity or a termination electricity, when top crown (spiral inductor) and bottom crown homogeneous termination electricity, its effect is identical with electric capacity version electrode of the prior art, be equivalent to conventional capacitive pole plate, the electric capacity can surveying two-plate as conventional capacitive calculates pole plate distance, namely can be converted into acceleration for acceleration transducer.
When two-plate inductance two ends all connect electricity, electromagnetic induction can be utilized to make two pole plates attract each other or repel.Also can measure induced-current and obtain the speed of two pole plates apart from change.Such as on the left of Fig. 3 a as described in figure, when passing into the electric current of equidirectional in described top crown and described bottom crown, because the sense of current is identical, the magnetic field of equidirectional is produced in the spiral inductor of described top crown and described bottom crown, thus described top crown and described bottom crown attract each other, described top crown and described bottom crown to be drawn in.
In addition, rightabout electric current can also be passed in described top crown and described bottom crown, when in described top crown and described bottom crown, the sense of current is contrary, produce rightabout magnetic field, thus described top crown and described bottom crown repel mutually, so that described top crown and described bottom crown are pushed open, thus avoid and in described MEMS variable capacitance, additionally increase elastic device by described top crown and described bottom crown separately.When the two ends of described top crown and described bottom crown are all energized, can also record because pole plate is near the induced field current caused, i.e. the speed of capacitor plate distance change, by the pace of change measuring acceleration of motion that converts.
Particularly, operation principle:
As shown in Figure 3 d, can be used as two terminal device work, can regard general parallel-plate electric capacity as when only connecting described top crown first link 21 and bottom crown the first link 23, so can record the distance of two pole plates, described method records the acceleration of motion.
When working as four-terminal device, described top crown first link 21 and described top crown second link 20 are energized, and bottom crown first link 23 and described bottom crown second link 22 are energized.When in described top crown with described bottom crown, inductive current direction is identical, magnetic direction is identical and described top crown and described bottom crown are attracted each other.And the sense of current contrary time, magnetic direction repels mutually on the contrary mutually.Described method of attachment can record the change of acceleration of motion.
In addition, can also in also bottom crown first link 23 and the energising of described bottom crown second link 22 two ends, and top crown first link 21 and described top crown second link 20 survey electric current.When two pole plate distance changes, the induced-current of reflection distance pace of change in top crown, can be produced.
Therefore, on the one hand, the electric capacity that can survey two-plate as conventional capacitive calculates pole plate distance, namely can be converted into acceleration for acceleration transducer for electrode structure of the present invention.On the other hand, can also record because pole plate is near the induced field current caused, i.e. the speed of capacitor plate distance change, by the pace of change measuring acceleration of motion that converts.
In addition, alternatively preferred embodiment, described in described top crown and described bottom crown, the number of spiral inductor is not limited to a certain number range, all can comprise 1, two or more spiral inductor, as shown in Figure 3 e in described top crown and described bottom crown.
When comprising multiple described spiral inductor in described top crown or bottom crown, preferably select identical described spiral inductor, its setting direction is identical, namely the hand of spiral of described spiral inductance is identical, as shown in Figure 7, two spiral inductors are comprised in battery lead plate described in this embodiment, the shape of wherein said two spiral inductors is identical, set-up mode is also identical, when described top crown and described bottom crown all adopt described mode to arrange, the deflection as described in right figure can be produced in energising situation in described top crown and described bottom crown.
Embodiment 2
Can the preparation method of dynamic inductance electrode structure be described further described in embodiment particularly of the present invention one below in conjunction with accompanying drawing 4a-4h.
First, perform step 201, provide Semiconductor substrate, be formed with lower plane plate 201 on the semiconductor substrate, described lower plane plate is embedded with bottom crown 202, described bottom crown is planar spiral inductor.
Particularly, as shown in fig. 4 a, first provide Semiconductor substrate (not shown), wherein said Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Form various active device on the semiconductor substrate, such as form cmos device and other active device on the semiconductor substrate, described active device is not limited to a certain.
Lower plane plate 201 is formed in described Semiconductor substrate, the formation method of wherein said lower plane plate 201 is for form interlayer dielectric layer on the semiconductor substrate, then dielectric layer described in patterning, form groove, then the lower plane sheet material bed of material is selected to fill described groove to form described lower plane plate 201, described lower capacity substrate is preferred method to set up in this embodiment, also can omit.
The wherein said lower plane sheet material bed of material can select conductive material, to form the battery lead plate of conventional variable constant volume in prior art, because described lower plane plate can't be used for electrical connection, its its play fixing in this embodiment and support the effect of described bottom crown 202, thus can select conductive material, can also non-conducting material be selected.
Then on described lower plane plate 201, lower electrode material layer is deposited, to cover described lower plane plate 201, wherein said lower electrode material layer can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper, can be formed by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP), the method for preferred Cu electroplating (ECP) forms described lower electrode material layer.
Then lower electrode material layer described in patterning, to form spiral inductor, particularly, lower electrode material layer described in patterning, on described lower electrode material layer, such as forming the photoresist layer (not shown) of patterning, described photoresist layer is formed with the pattern of spiral inductor, is then mask patterning described lower electrode material layer with described photoresist layer, with by design transfer to described lower electrode material layer, to form described bottom crown 202.
In this step can also lower plane plate 201 described in patterning to form the pattern of spiral inductance in described lower plane plate 201, then select lower electrode material layer to fill described pattern, to form described bottom crown 202.The formation method of described bottom crown is not limited to above-mentioned two kinds, and additive method can also be selected to be formed.
Perform step 202, sacrificial material layer 203 on described lower plane plate and described bottom crown.
Particularly, as shown in Figure 4 b, described sacrificial material layer 203 can be photoresist, SiO
2, N doping silicon carbide layer NDC(Nitrogen dopped Silicon Carbite), SiN layer or amorphous carbon material (AC), preferred SiO in a detailed description of the invention of the present invention
2as sacrificial material layer.
After the described sacrificial material layer of deposition, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more conventional.
Perform step 203, sacrificial material layer 203 described in patterning, to remove the described sacrificial material layer 203 of part, exposes described lower plane plate 201.
Particularly, as illustrated in fig. 4 c, must meet described sacrificial material layer 203 still can cover described lower plane plate 201 completely afterwards to remove the described sacrificial material layer of part 203.
Perform step 204, described sacrificial material layer forms the flat sheet bed of material, the flat sheet bed of material forms top crown material layer on described, and top crown material layer described in patterning, to form the top crown 204 of planar spiral inductor.
Particularly, as shown in fig 4e, described sacrificial material layer forms the flat sheet bed of material, the material that the described upper flat sheet bed of material is preferably identical with the described lower plane sheet material bed of material, described formation method also can be identical, specifically repeats no more.
In this step, the height of the upper flat sheet bed of material described in formation, higher than described sacrificial material layer 203, then performs planarisation step, to make the height of the described upper flat sheet bed of material homogeneous.
Then the flat sheet bed of material deposits top crown material layer on described, described top crown material layer can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper, can be formed by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP), the method for preferred Cu electroplating (ECP) forms described lower electrode material layer.
Then upper electrode material layer described in patterning, to form spiral inductor, particularly, upper electrode material layer described in patterning, such as, form the photoresist layer (not shown) of patterning, described photoresist layer be formed with the pattern of spiral inductor on described upper electrode material layer, then be mask patterning described upper electrode material layer with described photoresist layer, with by design transfer in described upper electrode material layer, to form described top crown 204, as shown in figure 4d.
Perform step 205, continue the upper flat sheet bed of material of deposition, to form upper surface plate 205, cover described top crown 204.
Particularly, as shown in fig. 4f, described top crown 204 continues the flat sheet bed of material in deposition, to fill the space of described spiral inductor, and covers described top crown completely, to form upper surface plate 205.
Wherein said upper surface plate 205 can select various conductive metallic material, such as metallic copper, gold, silver, tungsten etc., because described upper surface plate 205 only plays effect that is fixing and that support, therefore described upper surface plate 205 can also select other insulating materials, is not limited to a certain.
Perform step 206, described in patterning, one end of upper surface plate 205 and described top crown 204, to form opening, exposes described sacrificial material layer 203.
Particularly, as shown in figure 4g, one end of surface plate 205 and described top crown 204 on patterning, to form opening, described opening is used for removing described pressure sensor sacrificial material layer 30 in subsequent steps, to form sensor cavities.
As preferably, one end of surface plate 205 and described top crown 204 on patterning, does not have etched one end to expose described sacrificial material layer 203, can select dry etching conductive material layer in this step, can select CF in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 207, remove described sacrificial material layer, to form cavity, as the dielectric medium of described variable capacitance.
Particularly, as shown in figure 4h, described sacrificial material layer 203 is removed, to form cavity between described top crown 204 and bottom crown 202, as the dielectric medium of described variable capacitance.
Dry etching can be selected, reactive ion etching (RIE), ion beam milling, plasma etching in the specific embodiment of the invention.Carry out dry etching preferably by one or more RIE step, such as, can select N in the present invention
2in conduct etching atmosphere, other a small amount of gas such as CF can also be added simultaneously
4, CO
2, O
2, described etching pressure can be 50-200mTorr, is preferably 100-150mTorr, power is 200-600W, and described etching period is 5-80s, more preferably 10-60s in the present invention, select larger gas flow in the present invention, as preferably, at N of the present invention simultaneously
2flow be 30-300sccm, be more preferably 50-100sccm.
After the described top electrode 204 of formation and described bottom electrode 202, also comprise the step of other components and parts in further mineralization pressure sensor or acceleration transducer, those skilled in the art can select conventional step to realize above-mentioned purpose, do not repeat them here.
Embodiment 3
Can the preparation method of dynamic inductance electrode structure be described further described in embodiment particularly of the present invention one below in conjunction with accompanying drawing 5a-5e.
First, perform step 301, provide Semiconductor substrate, be formed with lower plane plate on the semiconductor substrate, described lower plane plate is embedded with bottom crown, described bottom crown is planar spiral inductor.
Particularly, as shown in Figure 5 a, first provide Semiconductor substrate (not shown), wherein said Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Form various active device on the semiconductor substrate, such as form cmos device and other active device on the semiconductor substrate, described active device is not limited to a certain.
Lower plane plate 201 is formed in described Semiconductor substrate, the formation method of wherein said lower plane plate 201 is for form interlayer dielectric layer on the semiconductor substrate, then dielectric layer described in patterning, form groove, then the lower plane sheet material bed of material is selected to fill described groove to form described lower plane plate 201, described lower capacity substrate is preferred method to set up in this embodiment, also can omit.
Then on described lower plane plate 201, lower electrode material layer is deposited, to cover described lower plane plate 201, wherein said lower electrode material layer can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper, can be formed by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP), the method for preferred Cu electroplating (ECP) forms described lower electrode material layer.
Then lower electrode material layer described in patterning, to form spiral inductor, particularly, lower electrode material layer described in patterning, on described lower electrode material layer, such as forming the photoresist layer (not shown) of patterning, described photoresist layer is formed with the pattern of spiral inductor, is then mask patterning described lower electrode material layer with described photoresist layer, with by design transfer to described lower electrode material layer, to form described bottom crown 202.
In this step can also lower plane plate 201 described in patterning to form the pattern of spiral inductance in described lower plane plate 201, then select lower electrode material layer to fill described pattern, to form described bottom crown 202.The formation method of described bottom crown is not limited to above-mentioned two kinds, and additive method can also be selected to be formed.
Perform step 302, sacrificial material layer 203 on described lower plane plate and described bottom crown.
Particularly, as shown in Figure 5 a, described sacrificial material layer 203 can be photoresist, SiO
2, N doping silicon carbide layer NDC(Nitrogen dopped Silicon Carbite), SiN layer or amorphous carbon material (AC), preferred SiO in a detailed description of the invention of the present invention
2as sacrificial material layer.
After the described sacrificial material layer of deposition, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more conventional.
Perform step 303, sacrificial material layer 203 described in patterning, to remove the described sacrificial material layer 203 of part, exposes described lower plane plate 201.
Particularly, as shown in Figure 5 a, must meet described sacrificial material layer 203 still can cover described lower plane plate 201 completely afterwards to remove the described sacrificial material layer of part 203.
Perform step 304, described sacrificial material layer forms the flat sheet bed of material, the flat sheet bed of material forms top crown material layer on described, and top crown material layer described in patterning, to form the top crown 204 of planar spiral inductor.
Particularly, as shown in Figure 5 b, described sacrificial material layer forms the flat sheet bed of material, the material that the described upper flat sheet bed of material is preferably identical with the described lower plane sheet material bed of material, described formation method also can be identical, specifically repeats no more.
In this step, the thinner thickness of the upper flat sheet bed of material described in formation, therefore forms the upper flat sheet bed of material of step in described sacrificial material layer and described lower plane plate 201.
Then the flat sheet bed of material deposits top crown material layer on described, described top crown material layer can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper, can be formed by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP), the method for preferred Cu electroplating (ECP) forms described lower electrode material layer.
The thickness of described top crown material layer is homogeneous, and therefore described top crown material layer is also step, as shown in Figure 5 c.
Then upper electrode material layer described in patterning, to form spiral inductor, particularly, upper electrode material layer described in patterning, such as, form the photoresist layer (not shown) of patterning, described photoresist layer be formed with the pattern of spiral inductor on described upper electrode material layer, then be mask patterning described upper electrode material layer with described photoresist layer, with by design transfer in described upper electrode material layer, to form described top crown 204, as shown in Figure 5 c.
Perform step 305, described in patterning, one end of upper surface plate 205 and described top crown 204, to form opening, exposes described sacrificial material layer 203.
Particularly, as fig 5d, one end of surface plate 205 and described top crown 204 on patterning, to form opening, described opening is used for removing described pressure sensor sacrificial material layer 30 in subsequent steps, to form sensor cavities.
As preferably, one end of surface plate 205 and described top crown 204 on patterning, does not have etched one end to expose described sacrificial material layer 203, can select dry etching conductive material layer in this step, can select CF in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 306, remove described sacrificial material layer, to form cavity, as the dielectric medium of described variable capacitance.
Particularly, as depicted in fig. 5e, described sacrificial material layer 203 is removed, to form cavity between described top crown 204 and bottom crown 202, as the dielectric medium of described variable capacitance.
Dry etching can be selected, reactive ion etching (RIE), ion beam milling, plasma etching in the specific embodiment of the invention.Carry out dry etching preferably by one or more RIE step, such as, can select N in the present invention
2in conduct etching atmosphere, other a small amount of gas such as CF can also be added simultaneously
4, CO
2, O
2, described etching pressure can be 50-200mTorr, is preferably 100-150mTorr, power is 200-600W, and described etching period is 5-80s, more preferably 10-60s in the present invention, select larger gas flow in the present invention, as preferably, at N of the present invention simultaneously
2flow be 30-300sccm, be more preferably 50-100sccm.
After the described top electrode 204 of formation and described bottom electrode 202, also comprise the step of other components and parts in further mineralization pressure sensor or acceleration transducer, those skilled in the art can select conventional step to realize above-mentioned purpose, do not repeat them here.
Embodiment 4
Can the preparation method of dynamic inductance electrode structure be described further described in embodiment particularly of the present invention one below in conjunction with accompanying drawing 6a-6g.
First, perform step 401, provide Semiconductor substrate, be formed with lower plane plate on the semiconductor substrate, described lower plane plate is embedded with bottom crown, described bottom crown is planar spiral inductor.
As shown in Figure 6 b, formation method can not repeat them here with reference to embodiment 2 and embodiment 3 particularly.
Perform step 402, sacrificial material layer 203 on described lower plane plate and described bottom crown.
Particularly, as fig. 6 c, described sacrificial material layer 203 can be photoresist, SiO
2, N doping silicon carbide layer NDC(Nitrogen dopped Silicon Carbite), SiN layer or amorphous carbon material (AC), preferred SiO in a detailed description of the invention of the present invention
2as sacrificial material layer.
After the described sacrificial material layer of deposition, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more conventional.
Perform step 403, patterned sacrificial material layer 203, to form opening at the two ends of described sacrificial material layer 203, expose described lower plane plate, and removal part is positioned at middle sacrificial material layer, to form groove, as shown in fig 6d.
Perform step 404, in described groove, form the flat sheet bed of material and top crown material layer, and patterning, to form the top crown 204 of planar spiral inductor.
As shown in fig 6d, the place being different from embodiment 2 and embodiment 3 is in this step for go up the flat sheet bed of material and top crown material layer in this step simultaneously, and to form described top crown 204, patterning method can with reference to embodiment 2 and embodiment 3 particularly.
Perform step 405, continue the upper flat sheet bed of material of deposition, to form upper surface plate 205, cover described top crown 204.
Particularly, as shown in fig 6e, described top crown 204 continues the flat sheet bed of material in deposition, to fill the space of described spiral inductor, and covers described top crown completely, to form upper surface plate 205.
Perform step 406, described in patterning, one end of upper surface plate 205 and described top crown 204, to form opening, exposes described sacrificial material layer 203.
Particularly, as shown in Figure 6 f, one end of surface plate 205 and described top crown 204 on patterning, to form opening, described opening is used for removing described pressure sensor sacrificial material layer 30 in subsequent steps, to form sensor cavities.
As preferably, one end of surface plate 205 and described top crown 204 on patterning, does not have etched one end to expose described sacrificial material layer 203, can select dry etching conductive material layer in this step, can select CF in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 407, remove described sacrificial material layer, to form cavity, as the dielectric medium of described variable capacitance.
Particularly, remove described sacrificial material layer 203, to form cavity between described top crown 204 and bottom crown 202, as the dielectric medium of described variable capacitance, obtain structure as shown in Figure 6 a.Minimizing technology with reference to embodiment 2 and embodiment 3, can not repeat them here particularly.
After the described top electrode 204 of formation and described bottom electrode 202, also comprise the step of other components and parts in further mineralization pressure sensor or acceleration transducer, those skilled in the art can select conventional step to realize above-mentioned purpose, do not repeat them here.
The present invention is in order to solve problems of the prior art, providing a kind of new MEMS can dynamic inductance electrode structure, novel capacitor board structure is adopted in described electrode structure, inductance is incorporated in the design of movable capacitor board, two inductance can move mutually in the energized state, add the contrary sense of current to the inductance on two-plate, produce rightabout magnetic field and push two-plate open.Meanwhile, also identical electric current can be applied and two-plate attracts each other.Thus solve two-plate in prior art near after the electrostatic force of pole plate can not be leaned on to make it separate problem.
On the one hand, the electric capacity that can survey two-plate as conventional capacitive calculates pole plate distance, namely can be converted into acceleration for acceleration transducer for electrode structure of the present invention.On the other hand, can also record because pole plate is near the induced field current caused, i.e. the speed of capacitor plate distance change, by the pace of change measuring acceleration of motion that converts.
Fig. 7 a is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention, specifically comprises the following steps:
Step 201 provides Semiconductor substrate, is formed with lower plane plate and bottom crown on the semiconductor substrate, and described bottom crown is embedded in described lower plane plate;
Step 202 is sacrificial material layer on described lower plane plate and described bottom crown;
Step 203 forms the flat sheet bed of material in described sacrificial material layer;
Step 204 the flat sheet bed of material forms top crown material layer on described;
Top crown material layer described in step 205 patterning, to form the described top crown of planar spiral inductor;
Described in step 206 patterning, the upper flat sheet bed of material and described top crown, to form opening, expose described sacrificial material layer;
Step 207 removes described sacrificial material layer.
Fig. 7 b is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention, specifically comprises the following steps:
Step 301 provides Semiconductor substrate, is formed with lower plane plate on the semiconductor substrate, and described lower capacity substrate is embedded with bottom crown, and described bottom crown is planar spiral inductor;
Step 302 is sacrificial material layer on described lower plane plate and described bottom crown, and patterning, to remove the described sacrificial material layer of part on one end, expose described lower plane plate;
Step 303 forms surface plate in described sacrificial material layer;
Step 304 surface plate forms top crown material layer on described, and top crown material layer described in patterning, to form the top crown of planar spiral inductor;
Described in step 305 patterning, one end of upper surface plate and described top crown, to form opening, exposes one end that described sacrificial material layer does not etch;
Step 306 removes described sacrificial material layer.
Fig. 7 c is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention, specifically comprises the following steps:
Step 401 provides Semiconductor substrate, is formed with lower plane plate on the semiconductor substrate, and described lower capacity substrate is embedded with bottom crown, and described bottom crown is planar spiral inductor;
Step 402 is sacrificial material layer on described lower plane plate and described bottom crown, and patterning, to form opening at the two ends of described sacrificial material layer, expose described lower plane plate, and removal part is positioned at middle sacrificial material layer, to form groove;
Step 403 forms the flat sheet bed of material and top crown material layer in described groove, and patterning, to form the top crown of planar spiral inductor;
Step 404 continues the upper flat sheet bed of material of deposition, to form upper surface plate, covers described top crown;
Described in step 405 patterning, upper surface plate, exposes described sacrificial material layer;
Step 406 removes described sacrificial material layer.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (15)
1. MEMS can a dynamic inductance electrode structure, comprising:
Isolate top crown and the bottom crown of setting up and down, for the formation of two battery lead plates of variable capacitance in MEMS, wherein said top crown and described bottom crown all select planar spiral inductor, mutually move in energising situation to make described top crown and described bottom crown.
2. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, described planar spiral inductor selects square spiral inductance coil or round screw thread inductance coil.
3. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, describedly can also comprise independently inductance core by dynamic inductance electrode structure, described inductance core is positioned at the center of described planar spiral inductor.
4. according to claim 3 can dynamic inductance electrode structure, it is characterized in that, described inductance core is inductor wire.
5. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, describedly can also comprise surface plate and lower plane plate by dynamic inductance electrode structure, described upper surface plate and described lower plane plate are that monoblock is arranged, and described top crown and described bottom crown are embedded in described upper surface plate and described lower plane plate respectively.
6. according to claim 1 or 5 can dynamic inductance electrode structure, it is characterized in that, described top crown with comprise two or more identical planar spiral inductor in described bottom crown.
7. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, when being electrically connected the first link of described top crown and the first link corresponding to described bottom crown, be used for measuring the distance between described top crown and described bottom crown.
8. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, be electrically connected the first link of described top crown, the second link, when being electrically connected the first link, second link of described bottom crown, motion mutually occur simultaneously between described top crown and described bottom crown.
9. according to claim 8 can dynamic inductance electrode structure, it is characterized in that, when described top crown is identical with inductive current in described bottom crown, described top crown and described bottom crown attract each other;
When in described top crown and described bottom crown, inductive current is contrary, described top crown and described bottom crown repel mutually.
10. according to claim 1 can dynamic inductance electrode structure, it is characterized in that, be electrically connected the first link of described bottom crown, the second link, measure the induced-current of reaction distance pace of change in the first link of described top crown, the second link.
11. 1 kinds of MEMS can the preparation method of dynamic inductance electrode structure, comprising:
There is provided Semiconductor substrate, be formed with bottom crown on the semiconductor substrate, described bottom crown is planar spiral inductor;
Described bottom crown forms sacrificial material layer;
Described sacrificial material layer forms top crown, and described top crown is planar spiral inductor;
Remove described sacrificial material layer, between described top crown and described bottom crown, form cavity.
12. methods according to claim 11, is characterized in that, described method comprises:
There is provided Semiconductor substrate, be formed with lower plane plate and bottom crown on the semiconductor substrate, described bottom crown is embedded in described lower plane plate;
Sacrificial material layer on described lower plane plate and described bottom crown;
Described sacrificial material layer forms the flat sheet bed of material;
The flat sheet bed of material forms top crown material layer on described;
Top crown material layer described in patterning, to form the described top crown of planar spiral inductor;
Described in patterning, the upper flat sheet bed of material and described top crown, to form opening, expose described sacrificial material layer;
Remove described sacrificial material layer.
13. methods according to claim 12, it is characterized in that, described method is also included on described lower plane plate and described bottom crown after sacrificial material layer, sacrificial material layer described in patterning, to remove the described sacrificial material layer of part on one end, expose described lower plane plate;
And the flat sheet bed of material and described top crown on patterning, to form opening, expose one end that described sacrificial material layer does not etch.
14. methods according to claim 13, is characterized in that, described method continues the described upper flat sheet bed of material of deposition after being also included in and forming described top crown, to form upper surface plate (205), covers described top crown.
15. methods according to claim 12, it is characterized in that, described method to be also included on described lower plane plate and described bottom crown after sacrificial material layer, sacrificial material layer described in patterning, to form opening at two ends, expose described lower capacity substrate, in the middle of described sacrificial material layer, form groove simultaneously;
The flat sheet bed of material and top crown material layer on being formed in described groove;
Capacitive plate material layer described in patterning and described top crown material layer, to form the top crown of planar spiral inductor;
Continue the upper flat sheet bed of material of deposition, to form upper surface plate, cover described top crown.
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