CN104868214A - Balanced transition circuit of microstrip-substrate integrated waveguide based on probe feeding - Google Patents
Balanced transition circuit of microstrip-substrate integrated waveguide based on probe feeding Download PDFInfo
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- CN104868214A CN104868214A CN201510205034.9A CN201510205034A CN104868214A CN 104868214 A CN104868214 A CN 104868214A CN 201510205034 A CN201510205034 A CN 201510205034A CN 104868214 A CN104868214 A CN 104868214A
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Abstract
The invention discloses a balanced transition circuit of a microstrip-substrate integrated waveguide based on probe feeding. The transition circuit comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a first metal paster, a second metal paster, four input/output transmission lines and four resonators, wherein first metallized through holes are formed in the second dielectric substrate and the third dielectric substrate to form a substrate integrated waveguide; the first metal paster forms ground of the input/output transmission lines; the resonators are arranged on the upper surface of the third dielectric substrate; the second metal paster forms ground of the substrate integrated waveguide; and four second metallized through holes penetrate through the first dielectric substrate, the first metal paster and the second dielectric substrate. The input/output transmission lines are fed into the substrate integrated waveguide by the second metallized through holes and the resonators at half-wavelength distances, so that a differential signal passes through and a common mode signal is inhibited; and the resonators and the bottom surface of the substrate integrated waveguide arranged below form equivalent capacitance, so that a requirement for the length of a probe is reduced, a requirement for the thickness of the substrate integrated waveguide is reduced, and the thickness of the circuit is reduced.
Description
Technical field
The present invention relates to the communications field, say with having more, relate to a kind of micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed.
Background technology
In the business and military channels of microwave and millimeter wave, micro-band and substrate integration wave-guide are can two kinds of transmitting high-frequency signal conventional transmission lines between various module effectively.The module that microstrip is generally used for connecting multiple active circuit comprises the assembly installed in transistor, monolithic integrated microwave circuit (MMIC) and various surface.And substrate integration wave-guide is owing to having concurrently, and metal waveguide Q value is high, loss is low and power capacity large, is easy to again processing and Planar integration simultaneously, becomes the first-selection of the low loss line of antenna feeding network, high q filter system etc.
In the architecture Design of a system, dissimilar transmission line is used to be favourable, as the module that microstrip line and substrate integration wave-guide coexist.In this respect, when substrate integration wave-guide model calling just needs a micro-transition device taking substrate integration wave-guide to during micro-band module.In numerous applications, these transition devices are installed in the surface of Multilayer panel.Based on planar substrates, be easy to manufacture and the wideband microband-substrate integration wave-guide Transition Design of compact dimensions extremely important.
Neutrodyne circuit is subject to increasing research and pays close attention to due to the symmetry of its circuit form and the reversed nature of signal.Compared with traditional single-ended microwave circuit, the advantage of neutrodyne circuit comprises: harmonics restraint, high linearity, antijamming capability strong (usual outside noise is all common-mode signal), high reliability and high-output power (power combing of two difference channels) etc.Therefore, in current microwave monolithic integrated circuit (MMIC) and radio frequency integrated circuit (RFIC), balance/difference modes is widely adopted.Therefore the balanced type Transition Design developing micro-band-substrate integration wave-guide is necessary very much, in neutrodyne circuit.
Traditional micro-balanced type Transition Design taking substrate integration wave-guide to is mostly be made up of multi-form probe feed, wherein design stretches into substrate integration wave-guide by probe preferably, be coupled with substrate integration wave-guide, but because probe feed needs certain length, this makes substrate thickness thicker, and the selection of substrate is more difficult.For bandwidth of operation, this type of is designed to 17%, and this type of design is not assessed the performance of common mode inhibition this respect in addition.
Summary of the invention
The present invention is directed to traditional probe feed to realize micro-transition taking substrate integration wave-guide to, cause substrate thickness large, and inconvenient defect selected by substrate that is that cause to the thickness requirement of substrate is strict, a kind of micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed is provided, achieve the multilayer antarafacial transition that differential signal transmits from microstrip transmission line to substrate integration wave-guide, simplify circuit structure, reduce thickness, and be easy to manufacture, add differential mode bandwidth, common mode inhibition is effective, and antijamming capability is strong and reliability is high.
The technical scheme that the present invention solves the employing of its technical problem is: provide a kind of micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed, comprise first medium substrate, second medium substrate, the 3rd medium substrate, the first metal patch, the second metal patch, two input and output transmission line groups and four resonators; Two described input and output transmission line groups are symmetricly set in described first medium upper surface of base plate two ends, and each described I/O transmission line group comprises two I/O transmission lines that mirror image is arranged; The lower surface of described first medium substrate is connected with the upper surface of described second medium substrate; Described second medium substrate and described 3rd medium substrate are respectively arranged with multiple first plated-through hole to form substrate integration wave-guide, and described first metal patch is arranged at the upper surface of described second medium substrate to form the ground of described input and output transmission line group; The lower surface of described second medium substrate is connected with the upper surface of described 3rd medium substrate; Four described resonators are one group of two ends being symmetricly set in described 3rd medium substrate upper surface between two; Described second metal patch is arranged at the lower surface of described 3rd medium substrate to form the ground of substrate integration wave-guide; Four the second plated-through holes between two one group be symmetricly set in described first medium substrate two ends and run through described first medium substrate, described first metal patch and described second medium substrate; Two in one group described second plated-through holes are corresponding with the center of the position of the input/output terminal of two I/O transmission lines of the same side and two resonators of the same side respectively; Two in one group described second plated-through holes are at a distance of half wavelength.
Preferably, multiple first plated-through hole surrounds rectangle.
Preferably, described second medium substrate and described 3rd medium substrate also comprise the perceptual window be made up of multiple 3rd plated-through hole.
Preferably, described perceptual window is positioned at the center that multiple first plated-through hole surrounds rectangle.
Preferably, described perceptual window is rectangle, and be made up of four group of the 3rd plated-through hole laying respectively at rectangle four summits, often group comprises two the 3rd plated-through holes.
Preferably, described resonator is the metal patch of rectangle.
Micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed of the present invention has following beneficial effect: the I/O transmission line of balanced type transition is fed into substrate integration wave-guide by the probe resonator of the second plated-through hole composition at a distance of half-wavelength, differential signal is passed through, common-mode signal is suppressed, the equivalent capacity that the bottom surface of the substrate integration wave-guide (being made up of the 3rd medium substrate and the first plated-through hole) of patch resonator and below is formed can reduce the requirement to probe length, thus the requirement reduced substrate integration wave-guide thickness, decrease circuit thickness.
In addition, by increasing the perceptual window that plated-through hole is formed in substrate integration wave-guide, the bandwidth of differential-mode response is increased.Have evaluated the rejection ability of common-mode signal simultaneously, there is good common mode inhibition effect.
Accompanying drawing explanation
Fig. 1 is the micro-three-dimensional structure schematic diagram taking balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 2 is the micro-end view taking balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 3 is the micro-topology diagram taking circuit on first medium upper surface of base plate in balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 4 is the micro-topology diagram taking the first metal patch in balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 5 is the micro-topology diagram taking second medium substrate in balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 6 is the micro-topology diagram taking the 3rd medium substrate upper surface in balanced type transition circuit first embodiment of substrate integration wave-guide to based on probe feed of the present invention;
Fig. 7 is the micro-simulation result figure taking balanced type transition circuit first example of substrate integration wave-guide to based on probe feed of the present invention.
Embodiment
Below in conjunction with drawings and Examples the present invention will be further explained explanation.
Fig. 1 is the micro-three-dimensional structure schematic diagram taking balanced type transition circuit 100 first embodiment of substrate integration wave-guide to based on probe feed of the present invention, as shown in Figure 1, in the present embodiment, the micro-balanced type transition circuit 100 taking substrate integration wave-guide to based on probe feed comprises first medium substrate 1, second medium substrate 2, the 3rd medium substrate 3, first metal patch 4, second metal patch 5, two input and output transmission line groups 6 and four resonators 7.
Wherein, two input and output transmission line groups 6 are symmetricly set in first medium substrate 1 upper surface two ends, each I/O transmission line group 6 comprises two I/O transmission lines that mirror image is arranged, such as at two input transmission lines for mirror image setting of first medium substrate 1 left end, two output transmission lines for mirror image setting of right-hand member.If first medium substrate 1 left end be two export transmission lines, right-hand member be then two input transmission lines.The lower surface of first medium substrate 1 is connected with the upper surface of second medium substrate 2.
Second medium substrate 2 and the 3rd medium substrate 3 are respectively arranged with multiple first plated-through hole 8, and multiple first plated-through hole 8 is uniformly distributed, and surrounds a rectangle, forms substrate integration wave-guide.First metal patch 4 is arranged at the upper surface of second medium substrate 2 to form the ground of input and output transmission line group 6.The lower surface of second medium substrate 2 is connected with the upper surface of the 3rd medium substrate 3.Four resonators 7 are one group of two ends being symmetricly set in the 3rd medium substrate 3 upper surface between two, and in the present embodiment, resonator 7 is the metal patch of rectangle.Second metal patch 5 is arranged at the lower surface of the 3rd medium substrate 3 to form the ground of substrate integration wave-guide.
Four the second plated-through holes 9 between two one group be symmetricly set in first medium substrate 1 two ends, and four the second plated-through holes 9 all run through first medium substrate 1, first metal patch 4 and second medium substrate 2.Second plated-through hole 9 is probe.Two the second plated-through holes 9 often in group are half wavelength apart, and corresponding with the center of the position of the input/output terminal of two I/O transmission lines of the same side and two resonators 7 of the same side respectively.Such as, on the left of first medium substrate 1 is two input transmission lines, then the position of two the second plated-through holes 9, left side and these two input the position one_to_one corresponding of the input of transmission line, also with the center one_to_one corresponding of two resonators 7 of the same side.That is, the input/output terminal of two I/O transmission lines of the same side is at a distance of half wavelength, and the center of two resonators 7 of the same side is at a distance of half wavelength.
In addition, on second medium substrate 2 and the 3rd medium substrate 3, the center of the rectangle that multiple first plated-through hole 8 surrounds also is respectively arranged with the perceptual window be made up of multiple 3rd plated-through hole 10, preferably, perception window is rectangle, and be made up of four group of the 3rd plated-through hole 10 being arranged on its four summits, often group comprises two the 3rd plated-through holes 10.
In the present embodiment, the dielectric constant of first medium substrate 1, second medium substrate 2 and the 3rd medium substrate 3 is identical, can be realized by such as Ro4003C frequency PCB plate.In other embodiments, the dielectric constant of first medium substrate 1, second medium substrate 2 and the 3rd medium substrate 3 also can not be identical.
See Fig. 2 to Fig. 6 (only for citing and experiment measuring, be not used in restriction the present invention), in one example, the thickness h 1=0.913mm of first medium substrate 1, second medium substrate 2 thickness h 2=0.913mm, the 3rd medium substrate 3 thickness h 3=0.254mm, dielectric constant=3.38 of first medium substrate 1, second medium substrate 2 and second medium substrate 3, long L1=77mm, wide L2=30mm (in example, the length and width of the first to the 3rd medium substrate are identical).I/O transmission line is divided into four joints, first segment perpendicular to the long limit of first medium substrate 1, its length l1=6.9mm, its width W 1=2.1mm, the distance l4=8.4mm of its distance first medium substrate 1 minor face; Second section perpendicular to first segment, its length l2=6.6mm; Section three, perpendicular to second section, its length l3=5mm, the distance g=0.5mm between mirror image arrange Section three of two articles of I/O transmission lines; Section four, one end is connected with Section three, and the other end is input/output terminal and spacing ld=10.5mm, the length l5=8.65mm of Section four, the width W 3=1mm of Section four, and Section of four end is connected to semi arch diameter d 1=1.2mm.The length and width of the first metal patch 4 are identical with medium substrate, run through the outer annular diameter D=2mm of the second plated-through hole 9 of the first metallized patches 4, annular diameters d2=1mm, the minor face of the first metallized patches 4 and and its nearest second plated-through hole 9 between distance fv1=12.7mm, in one group, the spacing of two the second plated-through holes 9 is fv2=10.5mm, and the second plated-through hole 9 is apart from the beeline fv3=7mm on the long limit of the first metallized patches 4.
On second medium substrate 2 and the 3rd medium substrate 3, the distance of the shorter parallel edges of the rectangle two that the first plated-through hole 8 surrounds and second medium substrate 2 and the shorter parallel edges of the 3rd medium substrate 3 liang is equal, this distance V1=7.9mm.The distance of the parallel edges that the longer parallel edges of the rectangle two that the first plated-through hole 8 surrounds is longer with the 3rd medium substrate 3 liang with second medium substrate 2 can wait also can not be identical, be illustrated in figure 5 unequal, the parallel edges of one article longer of the rectangle that the first plated-through hole 8 surrounds and second medium substrate 2 and the longer parallel edges of the 3rd medium substrate 3 very close, the distance V2=14.4mm between the parallel edges of another article longer and second medium substrate 2 and the parallel with it limit of the 3rd medium substrate 3.As illustrated in Figures 5 and 6, the induction window of rectangle is positioned at the center of the rectangle that the first plated-through hole 8 surrounds, the distance of rectangle two vertical edges that induction window distance first plated-through hole 8 of rectangle surrounds is respectively lg=1.5mm and lv1=23.75mm, and the parallel edges length that the distance of the rectangle surrounded with the first plated-through hole 8 is respectively lg=1.5mm is lv2=12.5mm.The diameter Vd=0.5mm of the first plated-through hole 8, second plated-through hole 9 and the 3rd plated-through hole 10.The beeline lt1=5.05mm of the minor face of the rectangle that the second plated-through hole 9 running through second medium substrate 2 surrounds apart from the first plated-through hole 8, the distance lt2=6.3mm on the long limit of the rectangle that distance the first plated-through hole 8 surrounds, the spacing ltd=10.5mm of two the second plated-through holes 9 in a group.
Be arranged on the long lp1=10mm of the resonator 7 of the 3rd medium substrate 3 upper surface, wide lp2=7.5mm, the beeline v1=1.55mm of the minor face of the rectangle that resonator 7 surrounds apart from the first plated-through hole 8, the beeline v2=1.55mm on the long limit of the rectangle that resonator 7 surrounds apart from the first plated-through hole 8.The distance gp=3mm on two adjacent both sides of resonator 7 in a group.
The result emulated the transition circuit 100 with above-mentioned parameter by simulation software CST (Computer Simulation Technology) as shown in Figure 7, this transition meets the frequency range that return loss is less than 15dB is as can be seen from Figure 7 8.52 ~ 11.26GHz, namely relative bandwidth is 27.4%, and in passband, common-mode signal suppresses at more than 19dB.
Take in balanced type transition circuit 100 first embodiment of substrate integration wave-guide of the present invention based on the micro-of probe feed, the resonator 7 that I/O transmission line 6 is consisted of probe and the rectangular metal paster of the second plated-through hole 9 composition at a distance of half-wavelength is fed into substrate integration wave-guide, differential signal is passed through, common-mode signal is suppressed, the equivalent capacity that the bottom surface of the substrate integration wave-guide (being made up of the 3rd medium substrate 3 and the first plated-through hole 8) of rectangular metal paster and below is formed can reduce the requirement to probe length, thus the requirement reduced substrate integration wave-guide thickness, decrease circuit thickness.Increase bandwidth by adding perceptual window simultaneously.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within right of the present invention.
Claims (6)
1. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed, it is characterized in that, comprise first medium substrate (1), second medium substrate (2), the 3rd medium substrate (3), the first metal patch (4), the second metal patch (5), two input and output transmission line groups (6) and four resonators (7); Two described input and output transmission line groups (6) are symmetricly set in described first medium substrate (1) upper surface two ends, and each described input and output transmission line group (6) comprises two I/O transmission lines that mirror image is arranged; The lower surface of described first medium substrate (1) is connected with the upper surface of described second medium substrate (2); Described second medium substrate (2) and described 3rd medium substrate (3) are respectively arranged with multiple first plated-through hole (8) to form substrate integration wave-guide, and described first metal patch (4) is arranged at the upper surface of described second medium substrate (2) to form the ground of described input and output transmission line group (6); The lower surface of described second medium substrate (2) is connected with the upper surface of described 3rd medium substrate (3); Four described resonators (7) are one group of two ends being symmetricly set in described 3rd medium substrate (3) upper surface between two; Described second metal patch (5) is arranged at the lower surface of described 3rd medium substrate (3) to form the ground of substrate integration wave-guide; Four the second plated-through holes (9) between two one group be symmetricly set in described first medium substrate (1) two ends and run through described first medium substrate (1), described first metal patch (4) and described second medium substrate (2); Two in one group described second plated-through holes (9) are corresponding with the center of the position of the input/output terminal of two I/O transmission lines of the same side and two resonators (7) of the same side respectively; Two in one group described second plated-through holes (9) are at a distance of half wavelength.
2. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed according to claim 1, it is characterized in that, multiple first plated-through hole (8) surrounds rectangle.
3. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed according to claim 2, it is characterized in that, described second medium substrate (2) and described 3rd medium substrate (3) also comprise the perceptual window be made up of multiple 3rd plated-through hole (10).
4. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed according to claim 3, is characterized in that, described perceptual window is positioned at the center that multiple first plated-through hole (8) surrounds rectangle.
5. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed according to claim 4, it is characterized in that, described perceptual window is rectangle, be made up of four group of the 3rd plated-through hole (10) laying respectively at rectangle four summits, often group comprises two the 3rd plated-through holes (10).
6. the micro-balanced type transition circuit taking substrate integration wave-guide to based on probe feed according to claim 1, is characterized in that, the metal patch that described resonator (7) is rectangle.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067590A (en) * | 2016-07-29 | 2016-11-02 | 南京信息职业技术学院 | Double-frequency omnidirectional substrate integrated waveguide spiral slot antenna |
| CN107919516A (en) * | 2017-11-02 | 2018-04-17 | 东南大学 | A kind of voltage-controlled resonator of miniaturization substrate integrated coaxial line |
| CN109301472A (en) * | 2018-10-31 | 2019-02-01 | 南通至晟微电子技术有限公司 | Double frequency-band millimeter wave antenna |
| CN109494436A (en) * | 2018-11-15 | 2019-03-19 | 西安电子科技大学昆山创新研究院 | A kind of filter and preparation method thereof |
| CN110165351A (en) * | 2019-03-19 | 2019-08-23 | 西安电子科技大学 | A kind of transition structure of manifold type wideband microband to medium integrated waveguide |
| CN110233319A (en) * | 2019-05-24 | 2019-09-13 | 南通大学 | A kind of balanced type filter based on substrate integration wave-guide |
| CN112864559A (en) * | 2021-01-11 | 2021-05-28 | 博微太赫兹信息科技有限公司 | Multilayer dielectric plate transition conversion structure based on SIW |
| CN114024136A (en) * | 2021-11-04 | 2022-02-08 | 北京航空航天大学 | High common mode rejection ratio differential antenna based on half-mode substrate integrated waveguide |
| CN114899564A (en) * | 2022-05-24 | 2022-08-12 | 南通先进通信技术研究院有限公司 | Low-profile dual-band balanced dielectric resonator filter with controllable frequency band |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090000106A1 (en) * | 2007-06-27 | 2009-01-01 | Industrial Technology Research Institute | Method of forming vertical coupling structure for non-adjacent resonators |
| CN102280678A (en) * | 2011-05-27 | 2011-12-14 | 华南理工大学 | Balanced radio frequency electrically tunable bandpass filter with constant relative bandwidth |
| CN104218279A (en) * | 2014-09-02 | 2014-12-17 | 电子科技大学 | Novel dual-mode band-pass filter based on LTCC (low temperature co-fired ceramics) |
-
2015
- 2015-04-27 CN CN201510205034.9A patent/CN104868214B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090000106A1 (en) * | 2007-06-27 | 2009-01-01 | Industrial Technology Research Institute | Method of forming vertical coupling structure for non-adjacent resonators |
| CN102280678A (en) * | 2011-05-27 | 2011-12-14 | 华南理工大学 | Balanced radio frequency electrically tunable bandpass filter with constant relative bandwidth |
| CN104218279A (en) * | 2014-09-02 | 2014-12-17 | 电子科技大学 | Novel dual-mode band-pass filter based on LTCC (low temperature co-fired ceramics) |
Non-Patent Citations (4)
| Title |
|---|
| TSUNG-HSUN YANG等: "A 60GHz LTCC transistion between microstrip line and substrate integrated waveguide", 《APMC 2005 PROCEEDINGS》 * |
| XIN XU等: "A new approach to design differential-mode bandpass filters on SIW structure", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
| 刘晓静: "传输线转换及多层互连技术研究", 《万方学位论文》 * |
| 郝张成: "基片集成波导技术的研究", 《中国优秀博硕士学位论文全文数据库（博士）-信息科技辑》 * |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106067590A (en) * | 2016-07-29 | 2016-11-02 | 南京信息职业技术学院 | Double-frequency omnidirectional substrate integrated waveguide spiral slot antenna |
| CN106067590B (en) * | 2016-07-29 | 2018-11-13 | 南京信息职业技术学院 | Double-frequency omnidirectional substrate integrated waveguide spiral slot antenna |
| CN107919516A (en) * | 2017-11-02 | 2018-04-17 | 东南大学 | A kind of voltage-controlled resonator of miniaturization substrate integrated coaxial line |
| CN107919516B (en) * | 2017-11-02 | 2019-05-31 | 东南大学 | A kind of voltage-controlled resonator of miniaturization substrate integrated coaxial line |
| CN109301472A (en) * | 2018-10-31 | 2019-02-01 | 南通至晟微电子技术有限公司 | Double frequency-band millimeter wave antenna |
| CN109494436A (en) * | 2018-11-15 | 2019-03-19 | 西安电子科技大学昆山创新研究院 | A kind of filter and preparation method thereof |
| CN110165351B (en) * | 2019-03-19 | 2020-11-10 | 西安电子科技大学 | Transition structure from coupling type broadband microstrip to dielectric integrated waveguide |
| CN110165351A (en) * | 2019-03-19 | 2019-08-23 | 西安电子科技大学 | A kind of transition structure of manifold type wideband microband to medium integrated waveguide |
| CN110233319A (en) * | 2019-05-24 | 2019-09-13 | 南通大学 | A kind of balanced type filter based on substrate integration wave-guide |
| CN110233319B (en) * | 2019-05-24 | 2021-01-26 | 南通大学 | Balanced filter based on substrate integrated waveguide |
| CN112864559A (en) * | 2021-01-11 | 2021-05-28 | 博微太赫兹信息科技有限公司 | Multilayer dielectric plate transition conversion structure based on SIW |
| CN112864559B (en) * | 2021-01-11 | 2022-07-08 | 博微太赫兹信息科技有限公司 | Multilayer dielectric plate transition conversion structure based on SIW |
| CN114024136A (en) * | 2021-11-04 | 2022-02-08 | 北京航空航天大学 | High common mode rejection ratio differential antenna based on half-mode substrate integrated waveguide |
| CN114024136B (en) * | 2021-11-04 | 2022-05-31 | 北京航空航天大学 | High common mode rejection ratio differential antenna based on half-mode substrate integrated waveguide |
| CN114899564A (en) * | 2022-05-24 | 2022-08-12 | 南通先进通信技术研究院有限公司 | Low-profile dual-band balanced dielectric resonator filter with controllable frequency band |
| CN114899564B (en) * | 2022-05-24 | 2023-06-06 | 南通先进通信技术研究院有限公司 | Band-controllable low-profile double-band balanced dielectric resonator filter |
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