CN220106863U

CN220106863U - Coaxial-to-microstrip interconnection device and radio frequency module

Info

Publication number: CN220106863U
Application number: CN202320754946.1U
Authority: CN
Inventors: 牟潇潇; 袁文欣
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2023-03-31
Filing date: 2023-03-31
Publication date: 2023-11-28
Anticipated expiration: 2033-03-31

Abstract

A coaxial-to-microstrip interconnection device and a radio frequency module relate to the technical field of microwave device interconnection, and comprise: the microstrip comprises a shell, a microstrip substrate and a conductor, wherein a first microstrip line and a second microstrip line are arranged on the microstrip substrate, and the first microstrip line and the second microstrip line are positioned on different sides of the microstrip substrate; the conductor is positioned in the shell, and one end of the conductor along the central axis is in contact electrical connection with the second microstrip line; a groove is formed in one side of the shell, where the conductor and the second microstrip line are in contact; the microstrip substrate is provided with a conductive layer on the first side surface, an isolation area is arranged in a region, close to the second microstrip line, of the conductive layer, the conductive layer and the second microstrip line are electrically isolated through the isolation area, and the vertical projection of the groove on the first side surface is at least partially overlapped with the isolation area. According to the utility model, a welding-free electric connection mode can be provided by a side connection mode, the conductor is not easy to deform, the groove is high-resistance compensation, the isolation area is a backflow ground avoiding structure, and microstrip-to-coaxial connection of high-frequency ultra-wideband is cooperatively realized.

Description

Coaxial-to-microstrip interconnection device and radio frequency module

Technical Field

The utility model relates to the technical field of microwave device interconnection, in particular to a coaxial-to-microstrip interconnection device and a radio frequency module.

Background

Coaxial and microstrip lines are two types of transmission lines that are common in microwave systems. The microstrip line is a microwave transmission line composed of a single conductor strip supported on a dielectric substrate, and has the characteristics of small volume, light weight, wide use band, high reliability, low manufacturing cost and the like. Due to the development of microwave low-loss dielectric materials and microwave semiconductor devices, a microwave integrated circuit is formed, and the microstrip transmission line with the planar structure, which is suitable for manufacturing the microwave integrated circuit, is widely applied. Coaxial wires are often used as transmission lines for connection between modules or systems due to their wide frequency band, good shielding, simple structure, flexibility, etc.

The current use frequency of the radio frequency module is higher and higher, particularly the application of the terahertz technology is wider and wider, and higher requirements are put forward on the radio frequency input of the analog front end. For the radio frequency input with wide bandwidth, the coaxial is currently adopted as a signal input port, so that the coaxial-microstrip interconnection conversion structure also develops towards the high frequency and high performance.

The products of planar microstrip line structures need to be connected to coaxial lines of the same characteristic impedance for testing and use, and are usually in a modular form with coaxial connectors for input and output. The microstrip line and the coaxial line are generally interconnected in a direct welding way, the coaxial inner conductor is welded on a metal strip line of the microstrip line, the outer conductor is arranged on a grounding surface of the microstrip line, the connection way has little influence on the transmission of microwave signals in a low frequency band, but the connection way cannot be used to a higher frequency, and the microstrip to coaxial connection of a high-frequency ultra-wideband cannot be realized.

Disclosure of Invention

The utility model provides a coaxial-to-microstrip interconnection device which can realize high-frequency ultra-wideband microstrip-to-coaxial connection.

In a first aspect, the present utility model provides a coaxial-to-microstrip interconnection device comprising: the microstrip antenna comprises a shell, a microstrip substrate and a conductor, wherein the microstrip substrate and the conductor are both positioned on the shell, a microstrip line is arranged on the microstrip substrate, the microstrip line comprises a first microstrip line and a second microstrip line which are connected, and the first microstrip line and the second microstrip line are positioned on different sides of the microstrip substrate;

the conductor is positioned in the shell, is in a cable shape, and is electrically connected with the second microstrip line along one end of the central axis;

a groove is formed in one side of the contact position of the conductor and the second microstrip line of the shell, and the contact surface of the conductor and the second microstrip line is isolated from the shell through the inner space of the groove;

the microstrip substrate is provided with a conductive layer on a first side surface, and the first side surface is positioned on the back side of the side surface where the second microstrip line is positioned; the first side surface is adjacent to the second microstrip line, an isolation region is arranged in a region where the conductive layer and the second microstrip line are close to each other, and the conductive layer and the second microstrip line are electrically isolated through the isolation region; the vertical projection of the groove on the first side surface and the isolation region are at least partially coincident.

The utility model can provide a welding-free electric connection mode by a side connection mode, and the conductor is not easy to deform. In addition, by arranging the grooves and the isolation areas, the grooves are high-resistance compensation, parasitic capacitance generated by the contact surface of the conductor and the second microstrip line can be matched, impedance matching of the ultra-wideband coaxial-to-microstrip is realized, and good return loss performance is realized; the isolation area is of a backflow ground avoidance structure, so that impedance matching of ultra-wideband coaxial-to-microstrip can be realized, good return loss performance is realized, and high-frequency ultra-wideband microstrip-to-coaxial connection is realized cooperatively.

In a possible implementation manner, the housing includes a first base and a second base, and a step structure is arranged between the first base and the second base;

the side surface of the first base part, on which the step structure is formed, is a first surface, the side surface of the second base part, on which the step structure is formed, is a second surface, the first surface is perpendicular to the second surface, and the microstrip substrate is positioned on the second surface so as to form a specific structure of coaxial rotary microstrip.

In a possible implementation manner, the first microstrip line is located on the second face, the second microstrip line is located on a side face, close to the first base, of the microstrip substrate, and the conductor is abutted with the second microstrip line on the side face of the first base, so that electrical connection between the conductor and the microstrip line is achieved.

In one possible implementation manner, a gap is formed between the microstrip substrate and the first surface, and when a certain gap is formed, the coaxial rotary microstrip device has better return loss performance according to the arrangement of the groove and the isolation region.

In a possible implementation manner, the conductor includes an outer conductor and an inner conductor, the outer conductor is sleeve-shaped, and the cable-shaped inner conductor is located in a cavity of the outer conductor.

In one possible implementation, the housing has a channel, the conductor being located within the channel;

the outer conductor includes a conductive inner wall surface of the channel; or the outer conductor comprises a separate connector guiding entity located within the channel.

In a possible implementation manner, the inner conductor includes a main conductor and a contact, the main conductor and the contact are relatively fixed and electrically connected, and an end of the contact facing away from the main conductor is in contact with the second microstrip line.

In one possible embodiment, the contact has elasticity in the direction of the central axis of the inner conductor.

In a possible implementation, the central axis of the conductor is parallel to the first microstrip line.

In a possible implementation manner, the conductor is in a cable shape, and the diameter of one end of the conductor, which is in contact with the second microstrip line, is a first diameter;

the maximum width of the groove along the first direction is a first length, the first direction is perpendicular to the central axis of the conductor, the first direction is parallel to the plane where the first microstrip line is located, and the ratio of the first length to the first diameter is in the range of 1.5-3. By defining the relevant dimensional proportion of the diameters of the grooves and the conductor contact ends, the parasitic capacitance of the groove matching conductor and the contact surface of the second microstrip line is ensured, and the high-resistance compensation is realized.

In a possible implementation manner, the non-conductive medium is filled in the groove, and the contact surface of the conductor and the second microstrip line is isolated from the shell by the non-conductive medium filled in the groove.

the maximum distance between the central axis of the conductor along the second direction and the inner wall surface of the groove is a second length, the second direction is perpendicular to the central axis of the conductor, the second direction is parallel to the plane where the second microstrip line is located, and the ratio of the second length to the first diameter is in the range of 1.5-3.

In a possible implementation manner, a side edge, where the isolation region is connected with the second microstrip line, is a first edge, a side edge, where the isolation region deviates from the second microstrip line, is a second edge, a length of the first edge along a first direction is greater than or equal to a length of the second edge along the first direction, the first direction is perpendicular to a central axis of the conductor, and the first direction is parallel to a plane where the first microstrip line is located.

In a possible implementation manner, two ends of the first edge and the second edge are connected through a third edge, and the first edge, the second edge and the third edge are enclosed to form the isolation area;

the maximum width of the groove along the third direction is a third length, the maximum length of the third edge along the third direction is greater than 0.8 times of the third length, the third direction is parallel to the central axis of the conductor, and the third direction is perpendicular to the plane where the second microstrip line is located.

In a possible implementation manner, the second edge and the third edge are in smooth transition.

In a possible implementation manner, the conductor is in a cable shape, a diameter of one end of the conductor, which is in contact with the second microstrip line, is a first diameter, and a length of the first edge in the first direction is greater than 1.1 times of the first diameter.

In a second aspect, the present utility model provides a radio frequency module, including a coaxial-to-microstrip interconnection device as described in any one of the above.

Drawings

Fig. 1 is a schematic diagram of a coaxial-to-microstrip interconnection device according to an embodiment of the present utility model;

FIG. 2 is a schematic cross-sectional view A-A of FIG. 1;

fig. 3 is a schematic diagram of a microstrip substrate according to an embodiment of the present utility model;

fig. 4 is a schematic diagram of a microstrip line according to an embodiment of the present utility model;

FIG. 5 is a schematic diagram of an isolation region provided by an embodiment of the present utility model;

FIG. 6 is a schematic diagram of an apparatus for technique A provided by an embodiment of the utility model;

FIG. 7 is a comparative schematic diagram of return loss performance simulation provided by an embodiment of the present utility model;

FIG. 8 is an enlarged schematic view of the contact and recess of FIG. 2;

FIG. 9 is a schematic diagram of groove dimensions provided by an embodiment of the present utility model;

FIG. 10 is a schematic illustration of isolation region dimensions provided by an embodiment of the present utility model;

FIG. 11 is a schematic view of a second side and third side arc transition provided by an embodiment of the present utility model;

fig. 12 is a schematic view of a semicircular shape of an isolation region according to an embodiment of the present utility model.

Detailed Description

Embodiments of the present utility model will be described below with reference to the accompanying drawings in the embodiments of the present utility model.

For convenience of understanding, the following explains and describes english abbreviations and related technical terms related to the embodiments of the utility model.

It should be understood that the described embodiments are merely some, but not all, embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

The terminology used in the embodiments of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should be understood that the term "and/or" as used herein is merely one of the same fields describing the associated object, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.

Transverse electromagnetic wave (Transverse Electromagnetic Wave, TEM): the electric field component and the magnetic field component are perpendicular to each other and to the electromagnetic wave in the propagation direction. The TEM wave refers to both the electric vector and the magnetic vector perpendicular to the propagation direction.

quasi-TEM wave: the main mode of transmission within the microstrip line is a quasi-TEM mode.

And (3) coaxial line: the coaxial line is a broadband microwave transmission line which is formed by a guide system consisting of two coaxial cylindrical conductors, and air or high-frequency medium is filled between the inner conductor and the outer conductor. Coaxial wires are often used as transmission lines for connection between modules or systems due to their wide frequency band, good shielding, simple structure, flexibility, etc.

Microstrip line: the microstrip line is one of the most commonly used planar transmission lines in microwave circuits, and is a microwave transmission line formed by a single conductor strip supported on a dielectric substrate, and the other surface of the substrate is provided with a grounded metal flat plate. The microstrip line is a semi-open planar transmission line, the upper surface of the metal strip line is air, the lower surface of the metal strip line is a dielectric substrate, most of fields are concentrated in the dielectric substrate when microwave signals are transmitted on the microstrip line, and a part of fields also exist in the air medium.

Microstrip lines are a planar transmission line which is most used by hybrid microwave integrated circuits and monolithic microwave integrated circuits, and are easy to integrate with other passive microwave circuits and active circuit devices, so that integration of microwave components and systems is realized, and microstrip coaxial conversion inevitably occurs in a microwave system. Particularly, the current use frequency of the radio frequency module is higher and higher, and along with the wider application of the terahertz technology, higher requirements are put forward on the radio frequency input of the analog front end. For the radio frequency input with wide bandwidth, the coaxial is currently adopted as a signal input port, so that the coaxial-microstrip interconnection conversion structure also develops towards the high frequency and high performance.

In a low-frequency microwave circuit, microstrip coaxial conversion is generally connected in such a way that coaxial inner conductors are directly welded on metal strip lines of the microstrip, outer conductors are installed together with the ground of the microstrip line, and the structure has little influence on standing waves and insertion loss of a transfer port in a low frequency band. However, with the development of microwave technology, the frequency of the used microwave signal is higher and higher, which puts higher demands on the transmission process of the microwave signal, and the standing wave and the insertion loss of the microstrip coaxial general interconnection mode are increased along with the increase of the frequency, so the utility model provides a coaxial-microstrip-to-microstrip interconnection device, which can realize the microstrip-to-coaxial connection of high-frequency ultra-wideband.

The utility model provides a coaxial-to-microstrip interconnection device which can realize high-frequency ultra-wideband microstrip-to-coaxial connection. Referring to fig. 1 and 2, the coaxial-to-microstrip interconnection device provided by the present utility model includes a housing 100, a microstrip substrate 200, and a conductor 300. The microstrip substrate 200 and the conductor 300 in the embodiment of the present utility model are both located on the housing 100. The housing 100 is used to mount devices such as the microstrip substrate 200 and the conductor 300 in the embodiment of the present utility model. In the present utility model, the housing 100 may be a housing, and in one embodiment, the housing 100 may be a part of a housing of a radio frequency device.

In some possible embodiments, referring to fig. 1-3, fig. 2 is a schematic cross-sectional view A-A in fig. 1, where a microstrip line 210 is disposed on a microstrip substrate 200 in an embodiment of the present utility model, and the microstrip line 210 includes a first microstrip line 211 and a second microstrip line 212 that are connected, where the first microstrip line 211 and the second microstrip line 212 are located on different sides of the microstrip substrate 200.

In the embodiment of the utility model, the microstrip substrate 200 is a dielectric substrate, and the material of the dielectric substrate can be alumina, quartz, gallium arsenide, high-purity alumina ceramic, polyolefin, woven glass fiber material, or the like.

In some possible embodiments, referring to fig. 1 to 3, the microstrip line 210 in the embodiments of the present utility model is fixed on the microstrip substrate 200, and the microstrip line 210 may be a conductor strip, where the conductor strip may be a material with high conductivity, good stability, and strong adhesion to the substrate, so as to ensure the stability of the microstrip line structure.

In some possible embodiments, referring to fig. 3 and 4, the first microstrip line 211 and the second microstrip line 212 in the embodiments of the present utility model are located on different sides of the microstrip substrate 200, and the second microstrip line 212 is located on the side of the microstrip substrate 200 in contact with the conductor 300, for interconnecting the microstrip line and the coaxial line conductor.

In some possible embodiments, referring to fig. 1-3, the conductor 300 in the embodiment of the present utility model is located in the housing 100, where the conductor 300 is in a cable shape, and one end of the conductor 300 along the central axis is in contact electrical connection with the second microstrip line 212, and the central axis of the conductor 300 is parallel to the first microstrip line 211. It should be noted that, it is defined that an ideal state is parallel, and there may be production or assembly errors in the actual production process, so that the central axis of the conductor 300 and the first microstrip line 211 form a certain angle, and the phase inclination angle is not used for achieving a better use effect, for example, an offset of 10 degrees or 20 degrees, and is also included in the protection scope defined by the parallel connection of the conductor 300 and the first microstrip line 211 in the present utility model.

The cable-like shape means a long strip shape having a certain extending direction, and may be a straight column shape or may be curved. The central axis of the cable shape is consistent with the extending direction of the central axis.

The conductor 300 constitutes a coaxial line which can transmit a non-dispersive TEM wave, the TEM mode being the main mode of the coaxial line. From the characteristics of the TEM mode, it is understood that the TEM mode refers to both the electric field and the magnetic field being perpendicular to the propagation direction of the electromagnetic wave, i.e. there is neither an electric field component nor a magnetic field component in the transmission direction. The coaxial line has broadband characteristic, can work from direct current to millimeter wave band, even higher. Coaxial transmission lines are widely used in both microwave systems and microwave components.

In some possible embodiments, referring to fig. 2, a conductor 300 in an embodiment of the present utility model is mounted within the housing 100. One end of the conductor 300 along the central axis is in contact electrical connection with the second microstrip line 212 to realize interconnection of the coaxial line with the microstrip line. High-frequency and high-performance of the interconnection conversion structure of the coaxial-microstrip is realized.

In some possible embodiments, referring to fig. 1 to 3, the housing 100 in the embodiment of the present utility model is provided with a groove 113 at one side of the contact position between the conductor 300 and the second microstrip line 212, and the contact surface between the conductor 300 and the second microstrip line 212 is isolated from the housing 100 by the inner space of the groove 113. The isolation according to the present utility model means that the contact surface between the conductor 300 and the second microstrip line 212 is not in direct contact with the housing 100, so as to form direct electrical isolation.

The contact surface between the conductor 300 and the second microstrip line 212 generates parasitic capacitances, which cause problems such as crosstalk and signal integrity, and compensation is required to reduce the influence of parasitic effects on the signal. The groove 113 is high-resistance compensation, can be matched with parasitic capacitance generated by the contact surface of the conductor 300 and the second microstrip line 212, realizes the impedance matching of ultra-wideband coaxial-rotating microstrip, and has better return loss performance.

In some embodiments, the interior of the recess 113 may be filled with a non-conductive medium that isolates the contact surfaces of the housing 100 with the conductor 300 and the second microstrip line 212. The non-conductive medium is filled in the groove 113, so that the requirement on the precision degree of processing is high, but the filling of the non-conductive medium can improve the electric isolation effect of the contact surface of the conductive shell 100, the conductor 300 and the second microstrip line 212.

In some embodiments, referring to fig. 2 and 5, the microstrip substrate 200 in the embodiment of the present utility model has the conductive layer 220 on the first side 240, the first side 240 is adjacent to the second microstrip line 212, the first side 240 is isolated from the first microstrip line 211, and the first side 240 is located on the opposite side of the microstrip substrate 200 where the first microstrip line 211 is disposed. An isolation region 230 is disposed in a region where the conductive layer 220 and the second microstrip line 212 are close to each other, and the conductive layer 220 and the second microstrip line 212 are electrically isolated by the isolation region 230.

In some possible embodiments, the conductive layer 220 is a ground plane of the microstrip line, and the conductive metal may be deposited on the first side 240 in an area outside the isolation region 230, the isolation region 230 does not deposit the conductive metal, and the conductive layer 220 is isolated from the second microstrip line 212 by the isolation region 230, where isolation refers to no direct contact between the conductive layer 220 and the second microstrip line 212.

The isolation region 230 is arranged in the region where the conductive layer 220 and the second microstrip line 212 are close to each other, and the isolation region 230 is of a backflow ground avoiding structure, so that impedance matching of ultra-wideband coaxial rotary microstrip can be realized, and good return loss performance is achieved. Only part of the field in the microstrip line is in the dielectric region and part of the field is in the air region, and no phase matching of the TEM wave can be achieved at the interface of the dielectric and air to transmit the quasi-TEM wave.

In some possible embodiments, referring to fig. 2, the housing 100 in the embodiment of the present utility model includes a first base 110 and a second base 120, a step structure 130 is disposed between the first base 110 and the second base 120, a side surface of the first base 110 on which the step structure 130 is formed is a first surface 111, a side surface of the second base 120 on which the step structure 130 is formed is a second surface 112, the first surface 111 and the second surface 112 are perpendicular, and the microstrip substrate 200 is disposed on the second surface 112 and parallel to the second surface 112. The housing 100 includes a first base 110 and a second base 120, and forms a stepped structure, which can be mounted with the conductor 300 and the microstrip substrate 200 to form a stable structure.

In some possible embodiments, referring to fig. 1 to 3, the second side 112 of the second base 120 on which the step structure 130 is formed in the embodiment of the present utility model is a second side 112, and the second side 112 may be provided with a microstrip substrate 200, and the microstrip substrate 200 is provided with a microstrip line 210.

In some possible embodiments, referring to fig. 1-3, the first microstrip line 211 and the second plane 112 are parallel, and the second microstrip line 212 is located on a side of the microstrip substrate 200 near the first base 110. The first microstrip line 211 is connected to the second microstrip line 212. The second microstrip line 212 is in contact electrical connection with one end of the conductor 300 along the central axis.

In some possible embodiments, referring to fig. 2 and 6, a gap 114 is provided between the microstrip substrate 200 and the first base 110 in the embodiments of the present utility model. There is a tolerance during installation and a gap 114 may exist between the microstrip substrate 200 and the first base 110.

In some possible embodiments, referring to fig. 2, 8 and 9, fig. 8 is an enlarged schematic view of the groove 113 in fig. 2. The conductor 300 in the embodiment of the present utility model includes an outer conductor 310 and an inner conductor 320, the inner conductor 320 is in a cable shape, the diameter of the contact end of the inner conductor 320 and the second microstrip line 212 is the first diameter D1, the contact end contacts the second microstrip line 212, and the side wall of the groove 113 may be an arc surface, or may be a square groove or an irregularly shaped groove.

The maximum width of the groove 113 along the first direction 400 is the first length W1, in the present utility model, the first direction 400 is perpendicular to the central axis of the inner conductor 320, and the first direction 400 is parallel to the plane of the first microstrip line 211. Referring to fig. 1 and 9, the first direction 400 is parallel to the Y direction in the drawings. The ratio of the first length W1 to the first diameter D1 is in the range of 1.5 to 3.

In one embodiment, the maximum distance between the central axis of the inner conductor 320 along the second direction 500 and the inner wall surface of the groove 113 is the second length H1. The second direction 500 is perpendicular to the central axis of the inner conductor 320, and the second direction 500 is parallel to the plane of the second microstrip line 212. Referring to fig. 9, when the groove 113 is an arc groove, the second length H1 is a distance from the central axis of the inner conductor 320 to the lowest end of the circular arc inner wall surface of the groove 113 along the second direction 500, as shown by H1 in fig. 9. The ratio of the second length H1 to the first diameter D1 is in the range of 1.5 to 3.

The contact surface between the inner conductor 320 and the second microstrip line 212 generates parasitic capacitances, which cause problems such as crosstalk and signal integrity, and processing is required to reduce the influence of parasitic effects on the signal. The groove 113 is high-resistance compensation, can be matched with parasitic capacitance generated by the contact surface of the inner conductor 320 and the second microstrip line 212, realizes the impedance matching of ultra-wideband coaxial-rotating microstrip, and has better return loss performance.

In some possible embodiments, referring to fig. 2, the housing 100 in the embodiments of the present utility model has a channel 140, and the conductor 300 is located in the channel 140.

The conductor 300 includes an outer conductor 310 and an inner conductor 320, the outer conductor 310 being sleeve-shaped and the cable-shaped inner conductor 320 being located within the cavity of the outer conductor 310.

Wherein the outer conductor 310 may be a conductive inner wall surface of the channel 140; or the outer conductor 310 is a separate connector-guiding entity that is located within the channel 140. The coaxial cable comprises an outer conductor 310 and an inner conductor 320, wherein the outer conductor 310 is hollow, the inner conductor 320 is solid, and the inner conductor 320 is positioned in a cavity of the outer conductor 310.

Coaxial wires are often used as transmission lines for connection between modules or systems due to their wide frequency band, good shielding, simple structure, flexibility, etc. With the wider and wider application of terahertz technology, coaxial signals can be used as signal input ports for radio frequency input of an analog front end, particularly for radio frequency input with wide bandwidth.

In some possible embodiments, referring to fig. 1-3, the inner conductor 320 in the embodiment of the present utility model includes a main conductor 321 and a contact 322, where the main conductor 321 and the contact 322 are relatively fixed and electrically connected, and an end of the contact 322 facing away from the main conductor 321 contacts the second microstrip line 212. In some possible embodiments, the contact 322 in the embodiment of the present utility model has a first diameter D1 at the end contacting the second microstrip line 212, the ratio of the first length W1 to the first diameter D1 is in the range of 1.5 to 3, and the ratio of the second length H1 to the first diameter D1 is in the range of 1.5 to 3.

In some possible embodiments, the contact head 322 in embodiments of the present utility model is resilient in the direction of the central axis of the inner conductor 320. The contact 322 may be a bellows contact with elastic deformation toward the axial direction, or the contact 322 may be a conductor or the like with elastic deformation to match the axial contact with the second microstrip line 212. The contact 322 has elasticity, and ensures the reliability of electrical connection between the coaxial and the microstrip when the gap 114 exists between the microstrip substrate 200 and the first base 110 during the installation process, thereby reducing the requirement of precise assembly of the process.

In one embodiment, the width of the gap 114 may be less than 30 microns (including 0) or greater than 30 microns depending on the actual part tolerances and assembly tolerances, with smaller gaps being more demanding for machining and assembly. The present utility model is given by way of example only in the case where the gap 114 is 30 microns, and the effect of the embodiment and technique a of the present utility model is given in fig. 7, without limiting the specific size of the gap 114 to only 30 microns.

In some possible embodiments, referring to fig. 2, 5 and 10, the isolation region 230 in the embodiments of the present utility model may have a trapezoid shape, or may have a semicircular shape or a semi-elliptical shape. The isolation region 230 is a reflux ground compensation structure with a trapezoid shape, so that impedance matching of ultra-wideband coaxial-to-microstrip can be realized, and good return loss performance is realized.

One side of the isolation region 230, which is connected to the second microstrip line 212, is a first side 231, one side of the isolation region 230, which faces away from the second microstrip line 212, is a second side 232, and the length of the first side 231 along the first direction 400 is greater than or equal to the length of the second side 232 along the first direction 400. As shown in fig. 1, 9 and 10, the first direction 400 is perpendicular to the central axis of the conductor 300, and the first direction 400 is parallel to the plane of the first microstrip line 211.

In this embodiment, the first side 231 and the second side 232 are both linear, and the first side 231 and the second side 232 are parallel, and the length of the first side 231 along the first direction 400 is greater than or equal to the length of the second side 232 along the first direction 400, and the isolation region 230 is rectangular, square or trapezoidal. When the isolation region 230 is trapezoidal, the longer side is connected to the second microstrip line 212. In one embodiment, the first side 231 is determined according to the shape of the side of the microstrip substrate 200, and the second side 232 may be linear, or may be arc-shaped or irregular.

In one embodiment, the first side 231 and the second side 232 are connected at both ends thereof by a third side 233, and the first side 231, the second side 232, and the third side 233 enclose the isolation area 230. The third side 233 may be a line, a straight line, or an arc line; alternatively, the third side 233 may be a fold line, and the shape of the third side 233 is not limited in the present utility model.

Referring to fig. 8, the maximum width of the groove 113 along the third direction 600 is a third length L3, the maximum length of the third side 233 along the third direction 600 is a fourth length L4, the fourth length L4 is greater than 0.8 times of the third length L3, the central axes of the third direction 600 and the inner conductor 320 are parallel, the planes of the third direction 600 and the second microstrip line 212 are perpendicular, and in this embodiment, the third direction 600 and the illustrated X direction are parallel.

In one embodiment, referring to fig. 8, the inner conductor 320 is in a cable shape, and the diameter of the inner conductor 320 at the end contacting the second microstrip line 212 is a first diameter D1. Referring to fig. 9, the length of the first edge 231 along the first direction 400 is a fifth length L5, and the fifth length L5 is greater than 1.1 times the first diameter D1.

In one embodiment, referring to fig. 11, the second side 232 and the third side 233 smoothly transition to achieve a degree of regularity in the overall shape of the isolation area 230. In one embodiment, a chamfer may also be provided between the second side 232 and the third side 233.

In one embodiment, the isolation region 230 may also be semicircular or semi-elliptical, as shown in fig. 12, where the two ends of the second edge 232 are connected to the two ends of the first edge 231, the second edge 232 is a smooth arc as a whole, and the fourth length L4 is the maximum distance between the first edge 231 and the second edge 232 along the third direction 600.

In some possible embodiments, the gap 114 in embodiments of the present utility model is 30 μm due to machining and installation tolerances.

In contrast to the technology a, referring to fig. 6, fig. 6 shows a coaxial microstrip structure in the technology a. The coaxial-to-microstrip interconnect structure in technique a may be to bond the end of the inner conductor 320 to the microstrip line 210. The casing 100 has no groove structure, the microstrip substrate 200 is located on the second face 112, and the microstrip substrate 200 is not provided with a second microstrip line or an isolation zone. The inner conductor 320 is electrically connected to the microstrip line 210 by a connection structure of soldering, gold tape, or gold mesh.

In the ideal case of technology a, the gap 114 between the microstrip substrate 200 and the first base 110 is 0. In practice, however, the gap 114 may be 30 μm due to machining and mounting tolerances. The present utility model is described by taking 30 μm as an example, and the width of the gap 114 may be larger in practice.

Comparing the return loss simulation results of the embodiment of the present utility model with the return loss simulation results of the technology a in the ideal case, and the return loss simulation results of the embodiment of the present utility model with the technology a in the case where the gap 114 is 30 μm, as shown in fig. 7, for the technology a, the return loss performance decreases with the increase of the installation gap, whereas the return loss of the embodiment of the present utility model is greater than the return loss of the technology a in the ideal case (the installation gap is 0) and the installation gap is 30 μm in the range of 0Ghz to 110GH in the installation gap, and the embodiment of the present utility model has better return loss performance compared with the embodiment of the present utility model. It should be noted that the present utility model only exemplarily indicates return loss simulation results in the range of 0Ghz to 110GH, and the return loss performance of the present utility model is also superior to that of the technique a in the ideal case (the installation gap is 0) and the installation gap is 30 μm in a larger frequency range.

In some possible embodiments, the present utility model provides a radio frequency module, in which the coaxial-to-microstrip interconnection device of any one of the above embodiments is disposed.

In one embodiment, the radio frequency module may include and be an ultra wideband radio frequency front end input. Ultra Wide Band (UWB) technology is a wireless communication technology that makes a signal have a bandwidth of the order of GHz by directly modulating an impulse with very steep rise and fall times. The ultra-wideband radio frequency front end may include power amplifiers, filters, low noise amplifiers, and/or switches, among others.

In some possible embodiments, the coaxial-to-microstrip interconnection device in the embodiments of the present utility model may be installed in a scenario where the rf module transmits an rf signal from a coaxial line to a microstrip line, where the rf module includes an inner conductor of the coaxial line, an outer conductor of a coaxial cable, and a microstrip line. The coaxial to microstrip interconnection may be part of a radio frequency module feed system, but the utility model is not so limited.

The above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model, and are intended to be included in the scope of the present utility model.

Claims

1. A coaxial-to-microstrip interconnect device, comprising: the microstrip antenna comprises a shell, a microstrip substrate and a conductor, wherein the microstrip substrate and the conductor are both positioned on the shell, a microstrip line is arranged on the microstrip substrate, the microstrip line comprises a first microstrip line and a second microstrip line which are connected, and the first microstrip line and the second microstrip line are positioned on different sides of the microstrip substrate;

2. The coaxial rotary microstrip interconnection device according to claim 1, wherein said housing comprises a first base and a second base, said first base and said second base having a stepped structure therebetween;

the side surface of the first base part, on which the step structure is formed, is a first surface, the side surface of the second base part, on which the step structure is formed, is a second surface, the first surface is perpendicular to the second surface, and the microstrip substrate is positioned on the second surface.

3. The coaxial-to-microstrip interconnect device of claim 2, wherein said first microstrip line is located on said second face and said second microstrip line is located on a side of said microstrip substrate proximate said first base.

4. The coaxial rotary microstrip interconnect device according to claim 2, wherein said microstrip substrate and said first face have a gap therebetween.

5. The coaxial-to-microstrip interconnection device according to any one of claims 1-4, wherein a central axis of said conductor is parallel to said first microstrip line.

6. The coaxial rotary microstrip interconnection device of any one of claims 1-4, wherein the conductor comprises an outer conductor and an inner conductor, the outer conductor being sleeve-shaped, the inner conductor being located within a cavity of the outer conductor.

7. The coaxial rotary microstrip interconnection device according to claim 6, wherein said housing has a channel, said conductor being located within said channel;

8. The coaxial rotary microstrip interconnection device according to claim 6, wherein said inner conductor comprises a main conductor and a contact, said main conductor and said contact being relatively fixed and electrically connected, an end of said contact facing away from said main conductor being in contact with said second microstrip line.

9. The coaxial rotary microstrip interconnection device of claim 8, wherein the contact head is resilient in a direction of a central axis of the inner conductor.

10. The coaxial rotary microstrip interconnection device according to claim 6, wherein said inner conductor is cable-like, said inner conductor having a first diameter at an end in contact with said second microstrip line;

the maximum width of the groove along the first direction is a first length, the first direction is perpendicular to the central axis of the inner conductor, the first direction is parallel to the plane where the first microstrip line is located, and the ratio of the first length to the first diameter is in the range of 1.5-3.

11. The coaxial rotary microstrip interconnection device according to claim 6, wherein said inner conductor is cable-like, said inner conductor having a first diameter at an end in contact with said second microstrip line;

the maximum distance between the central axis of the inner conductor along the second direction and the inner wall surface of the groove is a second length, the second direction is perpendicular to the central axis of the inner conductor, the second direction is parallel to the plane where the second microstrip line is located, and the ratio of the second length to the first diameter is in the range of 1.5-3.

12. The coaxial-to-microstrip interconnection device according to claim 6, wherein a side of the spacer connected to the second microstrip line is a first side, a side of the spacer facing away from the second microstrip line is a second side, a length of the first side along a first direction is greater than or equal to a length of the second side along the first direction, the first direction is perpendicular to a central axis of the inner conductor, and the first direction is parallel to a plane in which the first microstrip line is located.

13. The coaxial rotary microstrip interconnection device according to claim 12, wherein the first side and the second side are connected at both ends thereof by a third side, the first side, the second side and the third side enclosing to form the spacer;

the maximum width of the groove along the third direction is a third length, the maximum length of the third edge along the third direction is greater than 0.8 times of the third length, the third direction is parallel to the central axis of the inner conductor, and the third direction is perpendicular to the plane where the second microstrip line is located.

14. The coaxial rotary microstrip interconnection device according to claim 13, wherein a transition between said second side and said third side is rounded.

15. The coaxial-to-microstrip interconnection device of claim 12, wherein the inner conductor is cable-like, the inner conductor has a first diameter at an end in contact with the second microstrip line, and the first edge has a length in the first direction greater than 1.1 times the first diameter.

16. A radio frequency module comprising a coaxial microstrip interconnection device according to any of claims 1-15.