CN110165351B - Transition structure from coupling type broadband microstrip to dielectric integrated waveguide - Google Patents
Transition structure from coupling type broadband microstrip to dielectric integrated waveguide Download PDFInfo
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Abstract
The invention discloses a transition structure from a coupling type broadband microstrip to a dielectric integrated waveguide, which comprises: a first dielectric layer; the first metal layer is positioned below the first dielectric layer; the second dielectric layer is positioned below the first metal layer; the second metal layer is positioned below the second dielectric layer; the microstrip structure is positioned on the upper surface of the first medium layer; and the dielectric integrated waveguide structure is arranged in the second dielectric layer, and the microstrip structure and the dielectric integrated waveguide structure realize energy coupling through the first metal layer. According to the transition structure of the microstrip to dielectric integrated waveguide, the microstrip structure is arranged on the upper surface of the first dielectric layer, the dielectric integrated waveguide structure is arranged in the second dielectric layer, and the microstrip structure and the dielectric integrated waveguide structure realize energy coupling through the first metal layer.
Description
Technical Field
The invention belongs to the field of dielectric integrated waveguides, and particularly relates to a transition structure from a coupling type broadband microstrip to a dielectric integrated waveguide.
Background
With the large-scale application of microwave and millimeter wave systems, a broadband and low-loss feed network has very important practical significance as an energy transmission channel in the system.
In a high frequency band, the loss of the feed of the traditional microstrip transmission line is obviously increased, and meanwhile, due to the open structure, the problems of increased radiation loss in discontinuous state, signal crosstalk between lines, parasitism of higher-order modes and the like can be caused, so that the feed structure based on the dielectric integrated waveguide is receiving more and more attention. The structure of the waveguide is similar to that of the traditional medium filled metal waveguide, so that the waveguide has the characteristics of low loss, high Q value, high power capacity, strong anti-interference performance and the like, and simultaneously has the characteristics of small volume, easiness in processing, low cost, easiness in integration and the like compared with the metal waveguide.
The size of the dielectric integrated waveguide is still large compared with the microstrip feed, and the feed form of the dielectric integrated waveguide is difficult to realize the interconnection with the chip. For miniaturized and high-integration microwave and millimeter wave systems, a transition structure from a microstrip to a dielectric integrated waveguide cannot be avoided. However, most of the transition structures of the microstrip-to-dielectric integrated waveguide adopt a straight-through planar structure, and the size of the planar structure is relatively large.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a transition structure from a coupled broadband microstrip to a dielectric integrated waveguide. The technical problem to be solved by the invention is realized by the following technical scheme:
a transition structure of a coupled broadband microstrip to dielectric integrated waveguide, comprising:
a first dielectric layer;
the first metal layer is positioned below the first dielectric layer;
the second dielectric layer is positioned below the first metal layer;
the second metal layer is positioned below the second dielectric layer;
the microstrip structure is positioned on the upper surface of the first medium layer;
and the dielectric integrated waveguide structure is arranged in the second dielectric layer, and the microstrip structure and the dielectric integrated waveguide structure realize energy coupling through the first metal layer.
In one embodiment of the present invention, a slotted slot penetrating through the first metal layer is disposed in the first metal layer, and the microstrip structure and the dielectric integrated waveguide structure realize energy coupling through the slotted slot.
In one embodiment of the invention, the microstrip structure comprises a microstrip fork, an impedance transformer and a microstrip line, the microstrip fork comprising a first side, a second side and a third side, wherein,
the first edge and the second edge are symmetrically arranged in parallel, the third edge is arranged between the first end of the first edge and the first end of the second edge and is perpendicular to the first edge and the second edge, the microstrip line, the impedance converter and the third edge are sequentially connected, and the slotted slot is in simultaneous lapping of the orthographic projection of the second medium layer on the first edge and the second edge of the microstrip fork-shaped structure.
In one embodiment of the present invention, the dielectric integrated waveguide structure includes a first metal via group and a second metal via group, the first metal via group and the second metal via group each include a plurality of through holes penetrating through the second dielectric layer, the through holes being arranged at equal intervals and uniformly, and the first metal via group includes a first sub-metal via group and a second sub-metal via group, wherein,
the first sub-metal hole group and the second sub-metal hole group are symmetrically arranged in parallel, and the second metal hole group is arranged between the first end of the first sub-metal hole group and the first end of the second sub-metal hole group and is perpendicular to the first sub-metal hole group and the second sub-metal hole group.
In one embodiment of the invention, the first set of metal vias and the second set of metal vias satisfy the following relationship:
and p is the distance between two adjacent through holes, d is the diameter of the through hole, and lambdac is the waveguide cut-off wavelength.
In one embodiment of the invention, the perpendicular distance between the centre line of the second set of metal holes and the centre of the slotted slot is a quarter of a waveguide wavelength.
In an embodiment of the present invention, a metal matching hole penetrating through the second dielectric layer is further disposed between the first sub-metal via group and the second sub-metal via group.
The invention has the beneficial effects that:
according to the transition structure of the microstrip to dielectric integrated waveguide, the microstrip structure is arranged on the upper surface of the first dielectric layer, and the dielectric integrated waveguide structure is arranged in the second dielectric layer, so that the microstrip structure and the dielectric integrated waveguide structure realize energy coupling through the first metal layer.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a transition structure of a coupled broadband microstrip to dielectric integrated waveguide provided in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another transition structure of a coupled broadband microstrip to dielectric integrated waveguide provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a simulation result of a transition structure of a coupled broadband microstrip to dielectric integrated waveguide provided by an embodiment of the present invention at 60 GHz;
fig. 4 is a schematic diagram of a simulation test result of a transition structure of a coupled broadband microstrip to dielectric integrated waveguide based on an LTCC process according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a transition structure from a coupled broadband microstrip to a dielectric integrated waveguide according to an embodiment of the present invention. The embodiment of the invention provides a transition structure from a coupling type broadband microstrip to a dielectric integrated waveguide, which comprises:
a first dielectric layer 1;
the first metal layer 2 is positioned below the first dielectric layer 1;
the second dielectric layer 3 is positioned below the first metal layer 2;
the second metal layer 4 is positioned below the second dielectric layer 3;
the microstrip structure 7 is positioned on the upper surface of the first medium layer 1;
and the dielectric integrated waveguide structure is arranged in the second dielectric layer 3, and the microstrip structure 7 and the dielectric integrated waveguide structure realize energy coupling through the first metal layer 2.
A microstrip structure 7 is arranged on the upper surface of the first medium layer 1, and a medium integrated waveguide is arranged in the second medium layer 3. The first metal layer 2 provides a reference ground for the microstrip structure 7, i.e. the microstrip structure 7 and the dielectric integrated waveguide structure realize energy coupling through the first metal layer 2.
According to the transition structure from the microstrip to the dielectric integrated waveguide, the microstrip structure 7 is arranged on the upper surface of the first dielectric layer, and the dielectric integrated waveguide structure is arranged in the second dielectric layer 3, so that the microstrip structure 7 and the dielectric integrated waveguide structure realize energy coupling through the slotted slot 8 in the first metal layer 2, and the mode can realize a laminated structure from the microstrip to the dielectric integrated waveguide, thereby reducing the plane size of the transition structure and facilitating integration into small-sized and high-integration microwave, millimeter wave and other systems.
In this embodiment, the materials of the first dielectric layer 1, the first metal layer 2, the second dielectric layer 3 and the second metal layer 4 are not specifically limited, and those skilled in the art can select different materials according to the requirements of different systems to achieve the purpose of the present invention, so that details are not described herein.
In a specific embodiment, a slotted slot 8 is disposed in the first metal layer 2 and penetrates through the first metal layer 2, and the microstrip structure 7 and the dielectric integrated waveguide structure are energy-coupled through the slotted slot 8.
The slot 8 is a rectangular through hole penetrating through the first metal layer 2, and the position of the slot 8 is matched with the microstrip structure 7 and the dielectric integrated waveguide structure, so that the microstrip structure 7 and the dielectric integrated waveguide structure can realize energy coupling through the slot 8.
Preferably, the length of the long side of the slotted slot 8 is about one-half of the waveguide wavelength.
The transition structure of the embodiment utilizes the slotted slot 8 to realize slot coupling, can realize a laminated structure from a microstrip to a dielectric integrated waveguide, reduces the plane size of the transition structure, and is beneficial to the integration of the transition structure.
In a specific embodiment, the microstrip structure 7 comprises a microstrip fork 5, an impedance transformer 6 and a microstrip line 71, the microstrip fork 5 comprising a first side 51, a second side 52 and a third side 53, wherein,
the first edge 51 and the second edge 52 are symmetrically arranged in parallel, the third edge 53 is arranged between the first end of the first edge 51 and the first end of the second edge 52 and is perpendicular to the first edge 51 and the second edge 52, the microstrip line 71, the impedance transformer 6 and the third edge 53 are sequentially connected, and the orthogonal projection of the slotted slot 8 on the second medium layer 3 is simultaneously lapped on the first edge 51 and the second edge 52 of the microstrip fork-shaped structure 5.
The microstrip fork structure 5 is a metal microstrip structure, and is a fork structure, and the fork structure can reduce coupling impedance, thereby realizing wider bandwidth.
Preferably, the impedance transformer 6 is a quarter wavelength long to achieve impedance matching of the microstrip fork 5 to the microstrip line 71, wherein the characteristic impedance of the microstrip line 71 is typically 50 Ω.
The slotted slot 8 of the present embodiment overlaps the first edge 51 and the second edge 52 of the microstrip fork-shaped structure 5 at the same time of the orthographic projection of the second dielectric layer 3, so as to realize the energy coupling between the microstrip fork-shaped structure 5 and the dielectric integrated waveguide structure, and the laminated transition structure can reduce the plane size, which is more beneficial to the integration of the transition structure of the present embodiment into the systems of microwave, millimeter wave, etc. with miniaturization and high integration.
In a specific embodiment, the dielectric integrated waveguide structure includes a first metal via group 10 and a second metal via group 11, each of the first metal via group 10 and the second metal via group 11 includes a plurality of through holes penetrating through the second dielectric layer 3, the through holes being uniformly arranged at the same interval, and the first metal via group 10 includes a first sub-metal via group 101 and a second sub-metal via group 102, wherein,
the first sub-metal hole group 101 and the second sub-metal hole group 102 are symmetrically arranged in parallel, and the second metal hole group 11 is arranged between the first end of the first sub-metal hole group 101 and the first end of the second sub-metal hole group 102, and is perpendicular to the first sub-metal hole group 101 and the second sub-metal hole group 102.
The through holes in the first metal hole group 10 and the second metal hole group 11 are both formed by metal, and the first sub-metal hole group 101 and the second sub-metal hole group 102 both include the same number of through holes and are symmetrical along the transverse center line 14 of the second dielectric layer 3, the transverse center line 14 is parallel to the first metal hole group 10, and the second metal hole group 11 is disposed between the first end of the first sub-metal hole group 101 and the first end of the second sub-metal hole group 102. The first end of the first sub-metal hole group 101 and the first end of the second sub-metal hole group 102 are both ends far away from the side edge of the second dielectric layer 3, and the second end of the first sub-metal hole group 101 and the second end of the second sub-metal hole group 102 are both ends close to the side edge of the second dielectric layer 3. Here, the first sub-metal hole group 101 and the second sub-metal hole group 102 are connected by the second metal hole group 11, thereby forming a short circuit.
Preferably, the slot 8 is a rectangular through hole, the long side of which is parallel to the first sub-via group 101 and the second sub-via group 102, and the first side 51 and the second side 52 of the microstrip fork 5 are perpendicular to the long side of the slot 8, as shown in fig. 2, the central line corresponding to the long side of the slot 8 is from the transverse direction of the second dielectric layer 3The distance of the center line 14 is denoted as LyCan be adjusted by adjusting LyChanges the resonant impedance of the slotted slot 8.
The dielectric integrated waveguide structure of the embodiment is composed of a first metal hole group 10 and a second metal hole group 11, and the projections of the microstrip fork-shaped structure 5 and the slotted slot 8 on the second dielectric layer 3 are located in the region enclosed by the first sub-metal hole group 101, the second metal hole group 11 and the second sub-metal hole group 102, so that the microstrip fork-shaped structure 5 and the dielectric integrated waveguide structure can realize energy coupling through the slotted slot 8 more easily, and the plane size of the transition structure is reduced.
Further, the first metal via group 10 and the second metal via group 11 satisfy the following relationship:
wherein p is the distance between two adjacent through holes in the first sub-metal hole group 101, the second metal hole group 11 or the second sub-metal hole group 102, d is the diameter of the through hole, and λcIs the waveguide cutoff wavelength.
When the transition structure of the present embodiment satisfies the above relationship, the propagation energy will be confined inside the dielectric integrated waveguide structure, thereby reducing the leakage of energy.
In a specific embodiment, the perpendicular distance between the center line of the second metal hole group 11 and the center of the slotted slot 8 is a quarter of a waveguide wavelength, the structure can realize maximum energy coupling from a microstrip to a dielectric integrated waveguide, the slotted slot 8 is a rectangular through hole, and the center of the slotted slot 8 is the center where diagonals intersect.
Referring to fig. 2, the vertical distance between the center line of the second metal hole group 11 and the center of the slot 8 is denoted as L in the present embodimentxIs prepared by mixing LxThe setting is one quarter of the waveguide wavelength, and the strong coupling from the dielectric integrated waveguide to the microstrip can be realized.
In a specific embodiment, a metal matching hole 9 penetrating through the second dielectric layer 3 is further disposed between the first sub-metal hole group 101 and the second sub-metal hole group 102.
Preferably, the metal matching holes 9 are circular through holes and are formed of metal.
In order to realize the impedance matching of the port 13 of the dielectric integrated waveguide, a metal matching hole 9 is introduced into the middle of the dielectric integrated waveguide, assuming that a second sub-metal hole group 102 is close to the metal matching hole 9 and a first sub-metal hole group 101 is close to the slotted slot 8, the vertical distance from the center of the metal matching hole 9 to the center line of the second sub-metal hole group 102 is recorded as dy, the vertical distance from the center of the metal matching hole 9 to the center line of the second sub-metal hole group 11 is recorded as dx, and the reflection coefficient of the port 13 of the dielectric integrated waveguide structure can be adjusted by adjusting dx and dy.
The microstrip fork-shaped structure 5 of the transition structure of this embodiment adopts a fork-shaped structure, and the metal matching hole 9 is introduced between the first sub-metal hole group 101 and the second sub-metal hole group 102 in the second dielectric layer 3, so that the matching bandwidth of the transition structure can be improved, and a wider matching bandwidth can be realized.
Further, the slotted aperture 8 and the metal matching hole 9 are located on both sides of the transverse center line 14, in the transition structure of fig. 1, the slotted aperture 8 is located on the side close to the first sub-metal hole group 101, and the metal matching hole 9 is located on the side close to the second sub-metal hole group 102, and further, the slotted aperture 8 may be provided on the side close to the second sub-metal hole group 102, and the metal matching hole 9 is located on the side close to the first sub-metal hole group 101, and the position of the slotted aperture 8 on the side close to the second sub-metal hole group 102 is symmetrical with the position of the slotted aperture 8 on the side close to the first sub-metal hole group 101 with respect to the transverse center line 14, and the position of the metal matching hole 9 on the side close to the first sub-metal hole group 101 is symmetrical with the position of the metal matching hole 9 on the side close to the second sub-metal hole group 102 with respect to the transverse center line 14, in such a way that 180 degree phase transition of the slotted aperture 8 and the metal matching hole 9 is, the symmetrical differential feed network is realized.
The microstrip structure 7 of the present embodiment is disposed on the upper surface of the first dielectric layer 1, energy is fed from a port 12 of the microstrip structure 7, energy is coupled to the dielectric integrated waveguide structure by the microstrip fork structure 5 through the slotted slot 8, and is fed out from a port 13 of the dielectric integrated waveguide structure, and impedance matching is achieved through the metal matching hole 9.
Referring to fig. 3, fig. 3 is a simulated return loss diagram of the transition structure of the present embodiment, which is a simulated result of operating at 60GHz, and it can be seen from fig. 3 that the transition structure S21 of the present embodiment can achieve a relative bandwidth of-15 dB of about 32.2% at 60GHz, and the loss is about 0.7 dB. It can be seen that the transition structure of this embodiment can achieve a larger bandwidth with lower loss.
Referring to fig. 4, fig. 4 is a simulation test result based on LTCC (Low Temperature Co-fired Ceramic) process, which is a practical microstrip-to-dielectric integrated waveguide-to-microstrip back-to-back structure for testing convenience, and it can be seen from fig. 4 that the back-to-back transition structure can achieve a-10 dB test relative bandwidth larger than 31.8% at 60GHz, the simulated-10 dB relative bandwidth is about 39.7%, and the back-to-back loss is less than 2.7 dB. It can be seen that the transition structure of this embodiment can achieve a larger bandwidth with lower loss.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (3)
1. A transition structure of a coupled broadband microstrip to a dielectric integrated waveguide, comprising:
a first dielectric layer (1);
the first metal layer (2) is positioned below the first medium layer (1), and a slotted gap (8) penetrating through the first metal layer (2) is formed in the first metal layer (2);
the second dielectric layer (3) is positioned below the first metal layer (2);
the second metal layer (4) is positioned below the second dielectric layer (3);
a micro-strip structure (7) positioned on the upper surface of the first medium layer (1), wherein the micro-strip structure (7) comprises a micro-strip fork-shaped structure (5), an impedance converter (6) and a micro-strip line (71), the microstrip fork-like structure (5) comprises a first side (51), a second side (52) and a third side (53), wherein the first side (51) and the second side (52) are arranged in parallel and symmetrically, the third side (53) being arranged between a first end of the first side (51) and a first end of the second side (52), and is mutually perpendicular to the first side (51) and the second side (52), the microstrip line (71), the impedance transformer (6) and the third side (53) being connected in sequence, and the orthogonal projection of the slotted slot (8) on the second medium layer (3) is simultaneously lapped on the first edge (51) and the second edge (52) of the microstrip fork-shaped structure (5);
a dielectric integrated waveguide structure disposed in the second dielectric layer (3), wherein the microstrip structure (7) and the dielectric integrated waveguide structure realize energy coupling through the slotted slot (8) of the first metal layer (2), the dielectric integrated waveguide structure comprises a first metal hole group (10) and a second metal hole group (11), the first metal hole group (10) and the second metal hole group (11) both comprise a plurality of through holes which are uniformly arranged at the same interval and penetrate through the second dielectric layer (3), the first metal hole group (10) comprises a first sub-metal hole group (101) and a second sub-metal hole group (102), wherein the first sub-metal hole group (101) and the second sub-metal hole group (102) are symmetrically disposed in parallel, and the second metal hole group (11) is disposed between a first end of the first sub-metal group (101) and a first end of the second sub-metal group (102), and the metal matching holes are perpendicular to the first sub-metal hole group (101) and the second sub-metal hole group (102), and metal matching holes (9) penetrating through the second dielectric layer (3) are further arranged between the first sub-metal hole group (101) and the second sub-metal hole group (102).
2. The transition structure according to claim 1, characterized in that the first set of metal vias (10) and the second set of metal vias (11) satisfy the following relation:
and p is the distance between two adjacent through holes, d is the diameter of the through hole, and lambdac is the waveguide cut-off wavelength.
3. The transition structure according to claim 1, characterized in that the perpendicular distance between the centre line of the second set of metal holes (11) and the centre of the slotted slot (8) is a quarter of a waveguide wavelength.
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| CN104868214A (en) * | 2015-04-27 | 2015-08-26 | 南通大学 | Balanced transition circuit of microstrip-substrate integrated waveguide based on probe feeding |
| CN104882656A (en) * | 2015-04-27 | 2015-09-02 | 南通大学 | Microstrip-to-substrate integrated waveguide balanced type transition circuit |
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| CN104882656A (en) * | 2015-04-27 | 2015-09-02 | 南通大学 | Microstrip-to-substrate integrated waveguide balanced type transition circuit |
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