CN114221105A - Signal crossover circuit structure and integrated circuit - Google Patents

Signal crossover circuit structure and integrated circuit Download PDF

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Publication number
CN114221105A
CN114221105A CN202111258325.6A CN202111258325A CN114221105A CN 114221105 A CN114221105 A CN 114221105A CN 202111258325 A CN202111258325 A CN 202111258325A CN 114221105 A CN114221105 A CN 114221105A
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China
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signal
surface plasmon
artificial surface
circuit structure
integrated circuit
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袁萍
计国进
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Chongqing Mitian Communication Equipment Manufacturing Co ltd
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Chongqing Mitian Communication Equipment Manufacturing Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08Microstrips; Strip lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Waveguides (AREA)

Abstract

The invention discloses a signal crossing circuit structure and an integrated circuit. A signal crossing circuit structure comprises at least two paths of artificial surface plasmon transmission lines which are different in layer and crossed, wherein the crossed included angle is more than 30 degrees, and a dielectric layer is arranged between the artificial surface plasmon transmission lines of the adjacent layers. The invention skillfully utilizes the characteristic that the constraint force of the artificial surface plasmon on the energy of the electromagnetic field is strong, thereby weakening the signal coupling when the wires are crossed and realizing the purpose that the multichannel signals do not influence the crossing. Meanwhile, the design principle is simple, and professional calculation and design are not needed, so that the method is very favorable for popularization and use. Moreover, because the requirement on the included angle of the crossed signal paths is very low (more than or equal to 30 degrees), the invention can simultaneously accommodate the non-influence crossing of more signal paths and is beneficial to improving the design density of the integrated circuit to a greater extent.

Description

Signal crossover circuit structure and integrated circuit
Technical Field
The present invention relates to the field of signal crossing technologies, and in particular, to a signal crossing circuit structure and an integrated circuit.
Background
With the development of wireless technologies, the multi-channel multi-functional rf front end gradually becomes one of the development directions of the front end architecture of wireless communication technologies. Thereby leading to higher radio frequency integrated circuit design density requirements. In this context, the rf signal traces sometimes have to form a crossing situation. In order to solve the above problems and achieve higher routing density, a radio frequency circuit design called crossover has been developed in recent years [ non-patent documents 1 to 3], which can realize crossing of radio frequency signals in two directions without affecting signal integrity in the two directions. However, the design methods and processes are generally complex, and the working bandwidth is small, so that the design methods and structures are difficult to widely popularize and apply.
Artificial Surface Plasmon structures (also known as spoofspp, Designer SPP, SSPPs) are periodic structures with dispersion properties similar to the "Surface Plasmon" phenomenon in the optical and infrared bands. Therefore, compared with the traditional transmission line, the structure can realize stronger constraint force on electric field energy and smaller turning loss. Microwave millimeter wave terahertz devices based on the structure are continuously developed and comprise a filter, a power divider, an antenna and the like. At present, most of artificial surface plasmon designs are designed based on printed circuit boards, and few researches based on integrated circuit processes are available. In the integrated circuit technology, if the high-density integration advantages of the integrated circuit are fully exerted, the signal crossing circuit is necessarily required to be designed.
But the current research has several problems as follows,
1. the existing signal cross circuits are complex in design, and the integrity of two paths of signals cannot be influenced by a careful professional design;
2. most of the existing cross circuits have limited design working bandwidth, which limits the application and popularization of the cross circuits in future broadband and even ultra-wideband circuits;
3. the performance of some cross circuit designs can be affected by the cross angle, and even the cross angle is strictly required to be 90 degrees, which limits the wide application and popularization of the design.
Non-patent documents 1 to 3 are specifically as follows:
[1]. S. Y. Eom, A. Batgerel and L. Minz, "Compact Broadband Microstrip Crossover With Isolation Improvement and Phase Compensation," in IEEE Microwave and Wireless Components Letters, vol. 24, no. 7, pp. 481-483, July 2014, doi: 10.1109/LMWC.2014.2303163.
[2]. Y. Wang, A. M. Abbosh and B. Henin, "Broadband Microwave Crossover Using Combination of Ring Resonator and Circular Microstrip Patch," in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 3, no. 10, pp. 1771-1777, Oct. 2013, doi: 10.1109/TCPMT.2013.2262110.
[3]. Kongpop U-yen, E. J. Wollack, S. H. Moseley, T. R. Stevenson, W. Hsieh and N. T. Cao, "Via-less microwave crossover using microstrip-CPW transitions in slotline propagation mode," 2009 IEEE MTT-S International Microwave Symposium Digest, 2009, pp. 1029-1032, doi: 10.1109/MWSYM.2009.5165875。
disclosure of Invention
In view of the above, it is desirable to provide a signal crossing circuit structure and an integrated circuit.
In order to solve the technical problems, the invention adopts the following technical scheme:
a signal crossing circuit structure comprises at least two paths of artificial surface plasmon transmission lines which are different in layer and crossed, wherein the crossed included angle is more than 30 degrees, and a dielectric layer is arranged between the artificial surface plasmon transmission lines of the adjacent layers.
As a preferred embodiment of the signal crossing circuit structure provided in the present invention, the signal is a radio frequency signal or a digital signal.
In a preferred embodiment of the signal crossover circuit structure provided by the present invention, the dielectric layer has a thickness of 1mm or less.
As a preferred embodiment of the signal crossover circuit structure provided by the present invention, each of the artificial surface plasmon transmission lines includes periodic units that are linearly and periodically arranged and are sequentially connected.
In a preferred embodiment of the signal crossing circuit structure provided by the present invention, the periodic unit is a convex unit.
As a preferred embodiment of the signal crossover circuit structure provided by the present invention, the material forming the artificial surface plasmon transmission line is metal or alloy or graphene.
An integrated circuit having any of the signal crossing circuit structures described above.
As a preferred embodiment of the integrated circuit provided in the present invention, the integrated circuit is an integrated circuit applied to a satellite communication device.
Compared with the prior art, the invention has the following beneficial effects:
aiming at the problem that the design of a cross circuit is complex, the invention provides a cross circuit structure directly based on artificial surface plasmons. Specifically, the signal crossing circuit structure provided by the invention comprises at least two paths of intersecting artificial surface plasmon transmission lines which are arranged at different layers, the intersecting included angle is more than 30 degrees, the strict 90 degrees required by the existing crossing circuit are not needed, and the signal crossing circuit structure can accommodate an unaffected crossing design of 360/30=6 signal channels at most; and a dielectric layer is arranged between the artificial surface plasmon transmission lines of adjacent layers so as to respectively establish the multiple paths of artificial surface plasmon transmission lines at different levels.
The invention skillfully utilizes the characteristic that the constraint force of the artificial surface plasmon on the energy of the electromagnetic field is strong, thereby weakening the signal coupling when the wires are crossed and realizing the purpose that the multichannel signals do not influence the crossing. Meanwhile, the design principle is simple, and professional calculation and design are not needed, so that the method is very favorable for popularization and use. Moreover, because the requirement on the included angle of the crossed signal paths is very low (more than or equal to 30 degrees), the invention can simultaneously accommodate the non-influence crossing of more signal paths and is beneficial to improving the design density of the integrated circuit to a greater extent.
Furthermore, because the artificial surface plasmon structure is in low-pass filtering response, the cut-off frequency can be conveniently adjusted through the structure size, and a broadband or even ultra-wideband structure can be easily realized, so that the working bandwidth of the cross circuit design based on the artificial surface plasmon can be very wide.
In summary, the cross circuit design based on the artificial surface plasmons provided by the invention provides a new solution for the cross design of the integrated circuit. Compared with the traditional cross circuit design method, the design method is simpler and is easier to realize the broadband.
Drawings
In order to illustrate the present application or prior art more clearly, a brief description of the drawings needed for the description of the embodiments or prior art will be given below, it being clear that the drawings in the following description are some embodiments of the present application and that other drawings can be derived from them by a person skilled in the art without inventive effort.
FIG. 1 is a schematic diagram of an embodiment of a signal crossing circuit configuration according to the present invention;
FIG. 2 is a side view of one embodiment of a signal crossover circuit configuration of the present invention;
FIG. 3 is a schematic diagram of another embodiment of a signal crossing circuit configuration according to the present invention;
FIG. 4 is a schematic diagram of an artificial surface plasmon transmission line in a signal crossover circuit structure in accordance with the present invention;
FIG. 5 is a schematic diagram of the cycle unit of FIG. 4;
FIG. 6 shows the transmission coefficient and isolation coefficient of the crossbar circuit structure under the embodiment of FIG. 3;
fig. 7 is a graph comparing the transmission coefficients of individual transmission lines and the inventive crossover circuit structure.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.
In the design of the existing signal cross circuit, in order to realize the integrity of each path of signal, the complex and very professional design is needed, and the cross circuit designed in the way has limited working bandwidth, thereby limiting the application and popularization of the cross circuit in future broadband and even ultra-wideband circuits; in order to avoid the influence of the crossing angle, the crossing angle is generally required to be 90 degrees, and the wide application and popularization of the design are limited.
In order to solve the above problems, the present inventors skillfully applied it to a cross circuit design as individual transmission lines based on an artificial surface plasmon structure. Through a large number of experimental researches, the inventor finds that the constraint force of the artificial surface plasmons on the electromagnetic field energy is strong, so that the signal coupling during routing crossing is weakened, and meanwhile, the crossing included angle a of two adjacent artificial surface plasmons transmission lines 1 is designed to be more than 30 degrees, so that the purpose of crossing and passing of multi-channel signals without influence can be realized. Because the artificial surface plasmon has the capability of electromagnetic energy constraint, in the design of the invention of the cross signal path, additional isolation design is not needed between each transmission line.
Specifically, referring to fig. 1 to 3, the present embodiment provides a signal crossover circuit structure, which includes at least two intersecting artificial surface plasmon transmission lines 1 in different layers, where an intersection included angle a is greater than 30 °, and a dielectric layer 2 is disposed between the adjacent artificial surface plasmon transmission lines 1.
Referring to fig. 2, the different layers are that each of the artificial surface plasmon transmission lines 1 is not in the same layer, and are separated by the dielectric layer 2, so that each of the artificial surface plasmon transmission lines 1 is respectively established at different level heights. The thickness of the dielectric layer 2 is preferably less than 1mm, such as 1mm, 0.9mm, 0.8mm, 0.7mm, 0.6mm, 0.5mm, 0.4mm, 0.3mm, 0.2mm, 0.1 mm. It will be appreciated that the dielectric layer 2 may also be thicker than 1 mm. In order to further reduce the overall thickness of the integrated circuit, the thickness of the dielectric layer 2 is preferably controlled to be 1mm or less. Compared with the traditional signal routing cross design, the artificial surface plasmon polariton cross signal transmission line has the advantages that the constraint capacity of the artificial surface plasmon polariton is enhanced, the medium interval between different layers of cross signal transmission lines can be thinner, and the thinning and the miniaturization of an integrated circuit are facilitated.
Referring to fig. 1 and 3, the intersection included angle a is an intersection included angle a between adjacent artificial surface plasmon transmission lines 1, where each artificial surface plasmon transmission line 1 is orthographically projected on the same substrate in a top view. Generally, the coupling interference of the conventional transmission line becomes stronger when the included angle a becomes smaller, so that the intersecting included angle a needs to be designed to be 90 ° in the conventional transmission line intersection design. However, in the present invention, interference can be suppressed more than the conventional cross signal transmission line design, so the present invention can achieve an interference suppression performance comparable to or even superior to the conventional cross signal design by setting the intersection angle a to be 30 ° or more, preferably, with a smaller signal routing angle a. In a specific implementation, each of the artificial surface plasmon transmission lines 1 is designed as a signal trace, so that at most 6 signal traces can be accommodated simultaneously without mutual interference, as shown in fig. 4.
As shown in fig. 4 and 5, each of the artificial surface plasmon transmission lines 1 includes periodic units 11 that are linearly and periodically arranged and are sequentially connected. The periodic unit 11 is a convex unit. Wherein the male unit comprises an upper portion 12 and a lower portion 12, the upper portion 12 being narrower in width than the lower portion 12, such that when the male units are periodically connected, a groove is formed between adjacent upper portions 12 for transmitting SSPP waves. The structural size such as the shape, the size and the like of the convex unit can be designed according to actual needs. Because the artificial surface plasmon structure is in low-pass filtering response, the cut-off frequency can be conveniently adjusted through the structure size, and a broadband or even ultra-wideband structure can be easily realized, so that the working bandwidth of the cross circuit design based on the artificial surface plasmon can be very wide.
The artificial surface plasmon transmission line 1 is made of metal or alloy or graphene, and can be other good conductors.
In the present invention, the signal is a radio frequency signal or a digital signal, and it is understood that other signals may be used.
The invention also provides an integrated circuit having any of the signal crossing circuit structures described above. Preferably, the integrated circuit is an integrated circuit applied to a satellite communication device. Under the design scene of satellite communication equipment, the requirement on the size of an integrated circuit is high, the layout density of circuit components is high, and the signal cross probability is high. Compared with the traditional cross circuit design method, the signal cross circuit structure provided by the invention has the advantages that the design method is simpler, professional calculation and design are not needed, and the broadband is easier to realize.
Fig. 3 shows an embodiment of the signal crossing circuit configuration of the present invention, but it is understood that it is not limited thereto.
In the embodiment, the signal crossover circuit structure comprises 6 lines of artificial surface plasmon transmission lines 1, which are separated by a dielectric plate, wherein the dielectric plate has a relative dielectric constant of 2.65, a thickness of 0.5mm, and a loss tangent of 0.003. The intersection of two adjacent artificial surface plasmon transmission lines 1 is 30 degrees. The periodic unit 11 of each line of the artificial surface plasmon transmission line 1 is a regular convex unit including a rectangular upper part 12 and a rectangular lower part 13, the rectangular upper part 12 having a width of 1.0264mm and a height of 3.8305mm, and the rectangular lower part 13 having a width of 2.6966mm and a height of 7.0905 mm. The simulation results of the transmission efficiency and the isolation coefficient of this embodiment are shown in fig. 6. As shown in fig. 7, the cross circuit structure of the present invention has higher transmission efficiency than the conventional independent transmission line.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
It is to be understood that the above-described embodiments are merely illustrative of some, but not restrictive, of the broad invention, and that the appended drawings illustrate preferred embodiments of the invention and do not limit the scope of the invention. This application is capable of embodiments in many different forms and is provided for the purpose of enabling a thorough understanding of the disclosure of the application. Although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to one skilled in the art that the present application may be practiced without modification or with equivalents of some of the features described in the foregoing embodiments. All equivalent structures made by using the contents of the specification and the drawings of the present application are directly or indirectly applied to other related technical fields and are within the protection scope of the present application.

Claims (8)

1. A signal crossing circuit structure is characterized by comprising at least two paths of artificial surface plasmon transmission lines which are different in layer and crossed, wherein the crossed included angle is more than 30 degrees, and a dielectric layer is arranged between the artificial surface plasmon transmission lines of the adjacent layers.
2. The signal crossing circuit structure of claim 1 wherein the signal is a radio frequency signal or a digital signal.
3. The signal crossing circuit structure according to claim 1, wherein the dielectric layer is 1mm or less thick.
4. The signal crossover circuit structure of claim 1, wherein each of the artificial surface plasmon transmission lines comprises periodic units arranged linearly and periodically and connected in sequence.
5. The signal crossing circuit structure of claim 4 wherein the periodic cells are male cells.
6. The signal crossover circuit structure of claim 1, wherein the artificial surface plasmon transmission line is formed from a metal or alloy or graphene.
7. An integrated circuit having a signal crossing circuit structure as claimed in any one of claims 1 to 6.
8. The integrated circuit of claim 7, wherein the integrated circuit is an integrated circuit for use in a satellite communication device.
CN202111258325.6A 2021-10-27 2021-10-27 Signal crossover circuit structure and integrated circuit Pending CN114221105A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117497989A (en) * 2024-01-03 2024-02-02 南京迈矽科微电子科技有限公司 Power distributor and electronic equipment

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH06342858A (en) * 1993-06-02 1994-12-13 Sumitomo Electric Ind Ltd Hybrid integrated circuit
US20150236393A1 (en) * 2013-04-09 2015-08-20 Taiyo Yuden Co., Ltd. Multilayer circuit substrate
CN216850275U (en) * 2021-10-27 2022-06-28 重庆幂天通讯设备制造有限责任公司 Signal crossover circuit structure and integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342858A (en) * 1993-06-02 1994-12-13 Sumitomo Electric Ind Ltd Hybrid integrated circuit
US20150236393A1 (en) * 2013-04-09 2015-08-20 Taiyo Yuden Co., Ltd. Multilayer circuit substrate
CN216850275U (en) * 2021-10-27 2022-06-28 重庆幂天通讯设备制造有限责任公司 Signal crossover circuit structure and integrated circuit

Non-Patent Citations (1)

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Title
潘柏操: "人工表面等离激元传输特性研究", 《中国优秀硕士学位论文全文库》, 15 January 2019 (2019-01-15), pages 14 - 16 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117497989A (en) * 2024-01-03 2024-02-02 南京迈矽科微电子科技有限公司 Power distributor and electronic equipment
CN117497989B (en) * 2024-01-03 2024-03-08 南京迈矽科微电子科技有限公司 Power distributor and electronic equipment

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