CN104867948B - 阵列基板及其制造方法、控制方法、控制组件和显示装置 - Google Patents

阵列基板及其制造方法、控制方法、控制组件和显示装置 Download PDF

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CN104867948B
CN104867948B CN201510315475.4A CN201510315475A CN104867948B CN 104867948 B CN104867948 B CN 104867948B CN 201510315475 A CN201510315475 A CN 201510315475A CN 104867948 B CN104867948 B CN 104867948B
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electrode
photosensitive
tft
film transistor
thin film
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CN104867948A (zh
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包智颖
姜文博
王世君
吕振华
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Abstract

本发明是关于一种阵列基板及其制造方法、控制方法、控制组件和显示装置,属于显示技术领域。所述阵列基板包括:衬底基板上形成的薄膜晶体管和至少一个感光结构,感光结构与薄膜晶体管的漏极电连接,用于感知外界光强;在形成有薄膜晶体管和至少一个感光结构的衬底基板上形成有包括公共电极的图案。本发明通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。

Description

阵列基板及其制造方法、控制方法、控制组件和显示装置
技术领域
本发明涉及显示技术领域,特别涉及一种阵列基板及其制造方法、控制方法、控制组件和显示装置。
背景技术
近些年,随着手机等移动电子产品的不断发展,人们对显示装置各种功能的要求越来越苛刻。其中,显示装置显示亮度的自动调节功能一种常用功能。
相关技术中有一种显示装置(如手机),该显示装置的外壳上安装有感光单元,该感光单元接收外部光强,并将外部光强反馈给显示装置的控制组件,再由控制组件根据该外部光强控制背光源的光强,以调节显示装置的显示亮度。
发明人在实现本发明的过程中,发现上述方式至少存在如下缺陷:上述显示装置需要通过外部安装的感光单元才能够获取外部光强,并根据该外部光强来调节显示亮度,显示亮度的自动调节功能的实现成本较高。
发明内容
为了解决相关技术中显示亮度的自动调节功能的实现成本较高的问题,本发明提供了一种阵列基板及其制造方法、控制方法、控制组件和显示装置。所述技术方案如下:
根据本发明的第一方面,提供一种阵列基板,所述阵列基板包括:
衬底基板上形成的薄膜晶体管和至少一个感光结构,所述感光结构与所述薄膜晶体管的漏极电连接,用于感知外界光强;
在形成有所述薄膜晶体管和所述至少一个感光结构的衬底基板上形成有包括公共电极的图案。
可选的,所述感光结构包括:感光层和感光电极;
在形成有所述薄膜晶体管的衬底基板上形成有包括所述感光电极的图案,所述感光电极与所述薄膜晶体管的漏极电连接;
在所述感光电极上形成有所述感光层;
在所述感光层上形成有所述公共电极。
可选的,在所述公共电极上形成有发光结构;
在所述发光结构上形成有包括像素电极的图案,所述像素电极与所述薄膜晶体管的漏极电连接。
可选的,所述发光结构为三层电致发光结构或五层电致发光结构;
所述三层电致发光结构包括:阴极、电致发光层和阳极;
所述五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
可选的,所述感光层的材料包括感光树脂和感光聚合物中的至少一种。
根据本发明的第二方面,提供一种阵列基板的制造方法,所述方法包括:
在衬底基板上形成薄膜晶体管和至少一个感光结构,所述感光结构与所述薄膜晶体管的漏极电连接;
在形成有所述薄膜晶体管和所述至少一个感光结构的衬底基板上形成包括公共电极的图案。
可选的,所述感光结构包括:感光层和感光电极,
所述在衬底基板上形成薄膜晶体管和至少一个感光结构,包括:
在所述衬底基板上形成所述薄膜晶体管;
在形成有所述薄膜晶体管的衬底基板上形成包括所述感光电极的图案,所述感光电极与所述薄膜晶体管的漏极电连接;
在所述感光电极上形成所述感光层,所述公共电极形成于所述感光层上。
可选的,所述阵列基板还包括:发光结构,
所述在形成有所述薄膜晶体管和所述至少一个感光结构的衬底基板上形成包括公共电极的图案之后,还包括:
在所述公共电极上形成所述发光结构;
在所述发光结构上形成包括像素电极的图案,所述像素电极与所述薄膜晶体管的漏极电连接。
可选的,所述发光结构为三层电致发光结构或五层电致发光结构;
所述三层电致发光结构包括:阴极、电致发光层和阳极;
所述五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
可选的,所述感光层的材料包括感光树脂和感光聚合物中的至少一种。
根据本发明的第三方面,提供一种阵列基板的控制方法,用于控制组件,所述控制组件用于控制第一方面所述的阵列基板,所述阵列基板包括薄膜晶体管、感光结构和公共电极,所述方法包括:
所述控制组件停止向所述薄膜晶体管的源极输入信号,所述感光结构获取外界光线并产生光电流;
所述控制组件接收在所述公共电极的作用下流经所述薄膜晶体管的漏极和源极的所述光电流;
所述控制组件根据所述光电流控制显示亮度。
可选的,所述阵列基板还包括发光结构和像素电极,
所述控制组件根据所述光电流控制显示亮度,包括:
所述控制组件根据所述光电流获取控制信号;
所述控制组件将所述控制信号输入所述薄膜晶体管的源极,所述薄膜晶体管的源极将所述控制信号导向所述薄膜晶体管的漏极并流入所述像素电极,所述发光结构在所述像素电极和所述公共电极的作用下发光。
根据本发明的第四方面,提供一种控制组件,用于控制第一方面所述的阵列基板,所述阵列基板包括薄膜晶体管、感光结构和公共电极,所述控制组件包括:
停止模块,用于停止向所述薄膜晶体管的源极输入信号,所述感光结构用于获取外界光线并产生光电流;
接收模块,用于接收在所述公共电极的作用下流经所述薄膜晶体管的漏极和源极的所述光电流;
控制模块,用于根据所述光电流控制显示亮度。
可选的,所述控制模块,用于根据所述光电流获取控制信号,并将所述控制信号输入所述薄膜晶体管的源极,所述薄膜晶体管的源极用于将所述控制信号导向所述薄膜晶体管的漏极并流入所述像素电极,所述发光结构在所述像素电极和所述公共电极的作用下发光。
根据本发明的第五方面,提供一种显示装置,所述显示装置包括第一方面所述的阵列基板。
根据本发明的第六方面,提供一种显示装置,所述显示装置包括第四方面所述的控制组件。
本发明提供的技术方案可以包括以下有益效果:
通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本发明。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本发明的实施例,并与说明书一起用于解释本发明的原理。
图1是根据本发明实施例提供的一种阵列基板的结构示意图;
图2-1是根据本发明实施例提供的另一种阵列基板的结构示意图;
图2-2是图2-1所示实施例提供的阵列基板上未设置有感光结构处的结构示意图;
图2-3是图2-1所示实施例提供的阵列基板的俯视图;
图2-4是图2-1所示实施例提供的阵列基板的等效电路图;
图2-5是根据本发明实施例提供的另一种阵列基板的结构示意图;
图3-1是根据本发明实施例提供的一种阵列基板的制造方法的流程图;
图3-2是图3-1所示实施例提供的阵列基板的制造方法中的衬底基板结构示意图;
图4-1是根据本发明实施例提供的另一种阵列基板的制造方法的流程图;
图4-2至图4-7是图4-1所示实施例提供的阵列基板的制造方法中衬底基板的结构示意图;
图5-1是根据本发明实施例提供的一种阵列基板的控制方法的流程图;
图5-2是图5-1所示实施例提供的阵列基板的控制方法中控制显示亮度的流程图;
图6是根据本发明实施例提供的一种控制组件的框图。
上述各个附图中的附图标记为:110-衬底基板,120-薄膜晶体管,121-薄膜晶体管的漏极,130-感光结构,131-感光层,132-感光电极,140-公共电极,150-发光结构,160-像素电极,170-绝缘层,G-栅极,S-源极,D-漏极。
通过上述附图,已示出本发明明确的实施例,后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本发明构思的范围,而是通过参考特定实施例为本领域技术人员说明本发明的概念。
具体实施方式
这里将详细地对示例性实施例进行说明,其示例表示在附图中。下面的描述涉及附图时,除非另有表示,不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反,它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置和方法的例子。
图1是本发明实施例提供的一种阵列基板的结构示意图。该阵列基板可以包括:
衬底基板110上形成的薄膜晶体管120和至少一个感光结构130,感光结构130与薄膜晶体管120的漏极121电连接,用于感知外界光强。
在形成有薄膜晶体管120和至少一个感光结构130的衬底基板110上形成有包括公共电极140的图案。
综上所述,本发明实施例提供的阵列基板,通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
进一步的,请参考图2-1,其示出了本发明实施例提供的另一种阵列基板的结构示意图,该阵列基板在图1所示的阵列基板的基础上增加了更优选的部件,从而使得本发明实施例提供的阵列基板具有更好的性能。
可选的,感光结构包括:感光层131和感光电极132,感光层131和感光电极132可以共同组成图1中的感光结构130。
在图2-1中,在形成有薄膜晶体管120的衬底基板110上形成有包括感光电极132的图案,感光电极132与薄膜晶体管120的漏极121电连接。
在感光电极132上形成有感光层131。感光层131上形成有公共电极140。薄膜晶体管120上方的区域可以形成有感光层131,也可以未形成有感光层131,本发明实施例不作出限制,在薄膜晶体管120上方的区域形成有感光层131时,可以在薄膜晶体管120和感光层131之间形成绝缘层,以保护薄膜晶体管120。
可选的,感光层131的材料包括感光树脂和感光聚合物中的至少一种。
可选的,在公共电极140上形成有发光结构150。
在发光结构150上形成有包括像素电极160的图案,像素电极160与薄膜晶体管120的漏极121电连接。薄膜晶体管120上方的区域可以形成有发光结构150,也可以未形成有发光结构150,本发明实施例不作出限制。
可选的,像素电极160可以通过过孔与感光电极132电连接,由于感光电极132与漏极121电连接,因此像素电极160可以达到与漏极121电连接的效果,其中,在像素电极160通过过孔与感光电极电连接时,像素电极160不与感光层131接触。
可选的,发光结构150为三层电致发光结构或五层电致发光结构。
三层电致发光结构包括:阴极、电致发光层和阳极。
五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
可选的,本发明实施例提供的阵列基板,可以在部分像素区域设置有感光结构,示例性的,可以给阵列基板上任意1到4行像素设置感光结构,而其余像素均不设置感光结构,未设置有感光结构处的阵列基板的结构可以如图2-2所示。其中像素电极160直接与漏极121电连接,公共电极140形成于绝缘层170上。而本发明实施例提供的阵列基板的俯视图可以如图2-3所示,图2-3中未示出感光层、发光结构和像素电极,其中公共信号传输线210与公共电极140电连接,为公共电极140提供电信号;数据线220与薄膜晶体管120的源极电连接。
此外,本发明实施例提供的阵列基板的等效电路图可以如图2-4所示,其中,G为栅极,S为源极,D为漏极,像素电极与公共电极之间的电容为Cst,感光电极与公共电极之间的电容为Cs,Cst与Cs并联,现有技术中通常包含有Cst,本发明实施例提供的阵列基板比现有技术增加了一个Cs,可以认为是增大了存储电容,这有利于像素电压的保持,继而可以减小漏电流(薄膜晶体管关闭时流过的电流)造成的画质问题。
可选的,本发明实施例提供的阵列基板,还可以为图2-5所示的结构,其中,通过构图工艺控制发光结构150和感光层131的形状来使像素电极160能够与感光电极132电连接,薄膜晶体管120上方未形成像素电极160和感光层131,且部分感光电极132不被像素电极160和感光层131覆盖,此时在发光结构150上形成的像素电极160能够直接和感光电极132或漏极121电连接。
需要补充说明的是,本发明实施例提供的阵列基板,通过在基板上形成发光结构,达到了阵列基板自身就能够发光的效果。
综上所述,本发明实施例提供的阵列基板,通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
图3-1是根据本发明实施例提供的一种阵列基板的制造方法的流程图,该方法包括:
步骤301,在衬底基板上形成薄膜晶体管和至少一个感光结构,感光结构与薄膜晶体管的漏极电连接。
步骤301结束时,衬底基板的结构可以如图3-2所示。其中衬底基板110上形成有薄膜晶体管120和感光结构130,感光结构130和薄膜晶体管120的漏极121电连接。
步骤302,在形成有薄膜晶体管和至少一个感光结构的衬底基板上形成包括公共电极的图案。
步骤302结束后,衬底基板的结构可以如图1所示。
综上所述,本发明实施例提供的阵列基板的制造方法,通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
图4-1是根据本发明实施例提供的另一种阵列基板的制造方法的流程图,该方法包括:
步骤401,在衬底基板上形成薄膜晶体管。
步骤401结束时,衬底基板的结构可以如图4-2所示,其中衬底基板110上形成有薄膜晶体管120和绝缘层170。
步骤402,在形成有薄膜晶体管的衬底基板上形成包括感光电极的图案,感光电极与薄膜晶体管的漏极电连接。
步骤402结束时,衬底基板的结构可以如图4-3所示,其中感光电极132与薄膜晶体管120的漏极121电连接。
步骤403,在感光电极上形成感光层。
可选的,感光层的材料包括感光树脂和感光聚合物中的至少一种。
步骤403结束时,衬底基板的结构可以如图4-4所示,其中感光层131形成于感光电极132的上方,可选的,在薄膜晶体管120上方形成有感光层131时,可以在薄膜晶体管与感光层131之间形成绝缘层(图4-4中未示出)来保护薄膜晶体管120。需要说明的是,在像素电极通过过孔与感光电极132电连接时,可以在步骤403结束后,在感光层131上形成第一过孔k1,此时衬底基板的结构可以如图4-5所示,图4-5中的标号含义与图4-4一致。
步骤404,在形成有薄膜晶体管和至少一个感光结构的衬底基板上形成包括公共电极的图案。
其中,公共电极可以形成于感光层上。
步骤405,在公共电极上形成发光结构。
可选的,发光结构为三层电致发光结构或五层电致发光结构;三层电致发光结构包括:阴极、电致发光层和阳极;五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
步骤405结束时,衬底基板110的结构可以如图4-6所示,其中发光结构150形成于公共电极140的上方。
可选的,在像素电极是通过过孔与感光电极电连接时,如图4-7所示,可以在步骤405结束时,在发光结构150上形成第二过孔k2,第二过孔k2的半径可以小于第一过孔。
步骤406,在发光结构上形成包括像素电极的图案,像素电极与薄膜晶体管的漏极电连接。
步骤406结束时,衬底基板的结构可以如图2-1所示。由于第二过孔的半径小于第一过孔的半径,因而像素电极160不会和感光层131接触,避免了像素电极160与感光层131互相之间产生影响。
需要补充说明的是,本发明实施例提供的阵列基板的制造方法,通过在基板上形成发光结构,达到了阵列基板自身就能够对发光的效果。
综上所述,本发明实施例提供的阵列基板的制造方法,通过在阵列基板上形成感光结构,并通过感光结构来感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
图5-1是根据本发明实施例提供的一种阵列基板的控制方法的流程图,用于控制组件,控制组件用于控制图1所示实施例提供的阵列基板或图2-1所示实施例提供的阵列基板,该阵列基板可以包括薄膜晶体管、感光结构和公共电极,该方法包括:
步骤501,控制组件停止向薄膜晶体管的源极输入信号,感光结构获取外界光线并产生光电流。
停止向膜晶体管的源极输入信号后,感光结构产生的光电流就能够顺利的从源极反向进入控制组件。需要说明的是,可以将停止向膜晶体管的源极输入信号的时段作为感光阶段,其他时段作为显示阶段,感光阶段可以很短(如几毫秒),因而并不会影响正常的显示。
步骤502,控制组件接收在公共电极的作用下流经薄膜晶体管的漏极和源极的光电流。
为了使感光结构产生的光电流能够更容易的流向薄膜晶体管的漏极,可以给公共电极加上一个预设的负电压。
步骤503,控制组件根据光电流控制显示亮度。
控制组件在获取光电流后,可以根据该光电流获知当前的外界光强,并根据该外界光强控制显示亮度,比如控制背光源的亮度。
可选的,阵列基板还包括发光结构和像素电极。
此时,如图5-2所示,步骤503可以包括下面两个子步骤:
子步骤5031,控制组件根据光电流获取控制信号。
在阵列基板上包括发光结构时,控制组件可以直接生成用于控制发光结构的控制信号,该控制信号能够使放光结构发出需要的亮度(比如适应于人眼的亮度)的光线。
子步骤5032,控制组件将控制信号输入薄膜晶体管的源极,薄膜晶体管的源极将控制信号导向薄膜晶体管的漏极并流入像素电极,发光结构在像素电极和公共电极的作用下发光。
需要说明的是,由于本发明是实施例提供的阵列基板的控制方法中控制组件需要输出两种信号时序(用于控制感光阶段的信号时序和用于控制显示阶段的信号时序),因而可以在控制组件中设置两个电可擦可编程只读存储器(英文:Electrically ErasableProgrammable Read-Only Memory;简称:EEPROM)来分别控制感光阶段和显示阶段控制组件输出的信号时序。
需要补充说明的是,本发明实施例提供的阵列基板的控制方法,通过控制阵列基板上的发光结构发光,达到了能够通过控制阵列基板来调节显示亮度的效果。
综上所述,本发明实施例提供的阵列基板的控制方法,通过控制在阵列基板上形成的感光结构,而感光结构可以感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
图6是根据本发明实施例提供的一种控制组件,用于控制图1所示实施例提供的阵列基板或图2-1所示实施例提供的阵列基板,该阵列基板可以包括薄膜晶体管、感光结构和公共电极,控制组件包括:
停止模块610,用于停止向薄膜晶体管的源极输入信号,感光结构获取外界光线并产生光电流。
接收模块620,用于接收在公共电极的作用下流经薄膜晶体管的漏极和源极的光电流。
控制模块630,用于根据光电流控制显示亮度。
可选的,控制模块630,用于根据光电流获取控制信号,并将控制信号输入薄膜晶体管的源极,薄膜晶体管的源极将控制信号导向薄膜晶体管的漏极并流入像素电极,发光结构在像素电极和公共电极的作用下发光。
需要补充说明的是,本发明实施例提供的控制组件,通过控制阵列基板上的发光结构发光,达到了能够通过控制阵列基板来调节显示亮度的效果。
综上所述,本发明实施例提供的控制组件,通过控制在阵列基板上形成的感光结构,而感光结构可以感知外界光强;解决了相关技术中需要通过外部安装的感光单元才能够获取外部光强,显示亮度的自动调节功能的实现成本较高的问题;达到了降低显示亮度的自动调节功能的实现成本的效果。
本发明还提供一种显示装置,该显示装置可以包括图1所示实施例提供的阵列基板或图2-1所示实施例提供的阵列基板。
本发明还提供一种显示装置,该显示装置包括图6所示的控制组件。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (14)

1.一种阵列基板,其特征在于,所述阵列基板包括:
衬底基板上形成的薄膜晶体管和至少一个感光结构,所述感光结构用于感知外界光强;
所述感光结构包括:感光层和感光电极;
在形成有所述薄膜晶体管的衬底基板上形成有包括所述感光电极的图案,所述感光电极与所述薄膜晶体管的漏极电连接;
在所述感光电极上形成有所述感光层;
在所述感光层上形成有公共电极。
2.根据权利要求1所述的阵列基板,其特征在于,
在所述公共电极上形成有发光结构;
在所述发光结构上形成有包括像素电极的图案,所述像素电极与所述薄膜晶体管的漏极电连接。
3.根据权利要求2所述的阵列基板,其特征在于,所述发光结构为三层电致发光结构或五层电致发光结构;
所述三层电致发光结构包括:阴极、电致发光层和阳极;
所述五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
4.根据权利要求1所述的阵列基板,其特征在于,
所述感光层的材料包括感光树脂和感光聚合物中的至少一种。
5.一种阵列基板的制造方法,其特征在于,所述方法包括:
在衬底基板上形成薄膜晶体管和至少一个感光结构,所述感光结构包括:感光层和感光电极;
所述在衬底基板上形成薄膜晶体管和至少一个感光结构,包括:
在所述衬底基板上形成所述薄膜晶体管;
在形成有所述薄膜晶体管的衬底基板上形成包括所述感光电极的图案,所述感光电极与所述薄膜晶体管的漏极电连接;
在所述感光电极上形成所述感光层,在所述感光层上形成公共电极。
6.根据权利要求5所述的方法,其特征在于,所述阵列基板还包括:发光结构,
所述在形成有所述薄膜晶体管和所述至少一个感光结构的衬底基板上形成包括公共电极的图案之后,还包括:
在所述公共电极上形成所述发光结构;
在所述发光结构上形成包括像素电极的图案,所述像素电极与所述薄膜晶体管的漏极电连接。
7.根据权利要求6所述的方法,其特征在于,所述发光结构为三层电致发光结构或五层电致发光结构;
所述三层电致发光结构包括:阴极、电致发光层和阳极;
所述五层电致发光结构包括:阴极、电致发光层、离子传导层、离子存储层和阳极。
8.根据权利要求5所述的方法,其特征在于,
所述感光层的材料包括感光树脂和感光聚合物中的至少一种。
9.一种阵列基板的控制方法,其特征在于,用于控制组件,所述控制组件用于控制权利要求1至4任一所述的阵列基板,所述阵列基板包括薄膜晶体管、感光结构和公共电极,所述方法包括:
所述控制组件停止向所述薄膜晶体管的源极输入信号,所述感光结构获取外界光线并产生光电流;
所述控制组件接收在所述公共电极的作用下流经所述薄膜晶体管的漏极和源极的所述光电流;
所述控制组件根据所述光电流控制显示亮度。
10.根据权利要求9所述的方法,其特征在于,所述阵列基板还包括发光结构和像素电极,
所述控制组件根据所述光电流控制显示亮度,包括:
所述控制组件根据所述光电流获取控制信号;
所述控制组件将所述控制信号输入所述薄膜晶体管的源极,所述薄膜晶体管的源极将所述控制信号导向所述薄膜晶体管的漏极并流入所述像素电极,所述发光结构在所述像素电极和所述公共电极的作用下发光。
11.一种控制组件,其特征在于,用于控制权利要求1至4任一所述的阵列基板,所述阵列基板包括薄膜晶体管、感光结构和公共电极,所述控制组件包括:
停止模块,用于停止向所述薄膜晶体管的源极输入信号,所述感光结构获取外界光线并产生光电流;
接收模块,用于接收在所述公共电极的作用下流经所述薄膜晶体管的漏极和源极的所述光电流;
控制模块,用于根据所述光电流控制显示亮度。
12.根据权利要求11所述的控制组件,其特征在于,
所述控制模块,用于根据所述光电流获取控制信号,并将所述控制信号输入所述薄膜晶体管的源极,所述薄膜晶体管的源极将所述控制信号导向所述薄膜晶体管的漏极并流入像素电极,发光结构在所述像素电极和所述公共电极的作用下发光。
13.一种显示装置,其特征在于,所述显示装置包括权利要求1至4任一所述的阵列基板。
14.一种显示装置,其特征在于,所述显示装置包括权利要求11或12所述的控制组件。
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