CN104851819A - Method for temperature monitoring in ion implantation process - Google Patents
Method for temperature monitoring in ion implantation process Download PDFInfo
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- CN104851819A CN104851819A CN201410053110.4A CN201410053110A CN104851819A CN 104851819 A CN104851819 A CN 104851819A CN 201410053110 A CN201410053110 A CN 201410053110A CN 104851819 A CN104851819 A CN 104851819A
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- vacuum degree
- ion implantation
- implantation process
- temperature monitoring
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Abstract
The invention discloses a method for temperature monitoring in an ion implantation process, and the method comprises the following steps: starting the ion implantation process; monitoring the vacuum degree in the ion implantation process in real time, and comparing the vacuum degree with a preset safe vacuum degree range; and making a warning response if the vacuum degree monitored in real time is not within the preset safe vacuum degree range. According to the invention, temperature is reflected through the monitoring of the vacuum degree of a vacuum cavity. The method can achieve the real-time monitoring of temperature, is higher in timeliness, can effectively prevent overtemperature from affecting photoresist, and improves the yield of products.
Description
Technical field
The present invention relates to semiconductor process techniques field, particularly relate to the temperature monitoring method in a kind of ion implantation process.
Background technology
Ion implantation is one important procedure in semiconductor technology, and it reaches doping object by high ion bombardment silicon chip surface.Ion implantation normally after lithography, is adulterated using photoresist as mask to region not covered by photoresist.Ion implantation can produce a large amount of heats in the process of high ion bombardment, if these heats can not be taken away in time, will affect the electrical of doping, even causes photoresist form to change, and litho pattern is out of shape, and is commonly called as sticking with paste glue.Now carry out with the litho pattern after distortion the device that ion implantation will obtain abnormal parameters again, make semiconductor technology failure.
Special cooling recirculation system all can be had in traditional semiconductor technology to cool silicon chip, such as, adopt cooling circulating water and high-purity nitrogen etc.But cooling can not solve the too high problem of heat completely, in semiconductor technology process, temperature still can raise gradually, until technique failure.
Because traditional cooling recirculation system does not have temperature display function, if need temperature acquisition and display, also need to transform system, increase expense.Traditional settling mode regularly does cooling test (coolingtest), namely the probable ranges residing for temperature test paper determination temperature is utilized, to verify whether cooling system can control in safe range by temperature, but the shortcoming of the method is ageing too poor, problem may occur between twice cooling test, so just can not effectively prevent inefficacy technical process.
Summary of the invention
Based on this, be necessary to provide the temperature monitoring method in a kind of ageing higher ion implantation process.
A temperature monitoring method in ion implantation process, comprises the steps:
Start ion implantation process;
Vacuum degree in Real-Time Monitoring ion implantation process, and compare with the safe vacuum degree scope preset;
If the vacuum degree of Real-Time Monitoring is outside described safe vacuum degree scope, then perform warning response.
Wherein in an embodiment, described safe vacuum degree scope is included in the multiple scopes corresponding respectively with multiple different phase of ion implantation process.
Wherein in an embodiment, described safe vacuum degree scope is multiple scopes of corresponding multiple response grade.
Wherein in an embodiment, also comprise the step of default described safe vacuum degree scope:
Vacuum degree under ion implantation process in record semiconductor processes;
Obtain minimum under the normal process process in all records and peak determines described safe vacuum degree scope;
Wherein, described normal process process refers to that final products parameter meets the technical process of preset requirement.
Wherein in an embodiment, described safe vacuum degree scope is arranged by error detection and categorizing system, and described error detection and categorizing system are also responsible for performing described warning and are responded.
Wherein in an embodiment, the addressee that described warning response comprises to presetting sends Email.
Wherein in an embodiment, if the vacuum degree of Real-Time Monitoring is outside described safe vacuum degree scope, also performs protection response, comprising: suspend production, stop injecting or shutting down one or more of response mode of platform.
Temperature monitoring method in above-mentioned ion implantation process, reflect temperature by the vacuum degree in monitoring vacuum chamber, the Real-Time Monitoring object to temperature can be realized, ageing higher, too high temperature effectively can be prevented the impact of photoresist, improve the yield of product.In addition, because the operating state of cooling system is by well to being badly a process run down, in the present embodiment, as long as be that safe vacuum degree scope arranges a comparatively reasonably lower limit, just can accomplish to prevent in advance.And compared to adopting temperature test paper to obtain the mode of temperature conditions in traditional cooling test (coolingtest), the vacuum degree of Real-time Feedback also more accurately can reflect temperature value.
Accompanying drawing explanation
The principle schematic that Fig. 1 is ion implantation;
Fig. 2 is the temperature monitoring method flow chart in the ion implantation process of an embodiment;
Fig. 3 is curve of vacuum figure.
Embodiment
As shown in Figure 1, be the principle schematic of ion implantation.On the silicon chip 210 of photoetching treatment, define photoresist layer 220, silicon chip 210 is in vacuum chamber 10 and carries out ion implantation, to make silicon chip 210 is not formed specific doping by the region that photoresist layer 220 covers.Coolant to be sent in vacuum chamber 10 by pipeline 310 and is taken away heat from silicon chip 210 back side by cooling system 30, and in vacuum chamber 10 outside by heat exhaustion, cools circularly with this to silicon chip 210.Usually also there is error detection and classification (fault detection and classification, FDC) system 40 in system.FDC system 40 can obtain the various monitoring parameters in semiconductor processes, such as vacuum degree etc., then carries out various response according to the condition preset in FDC system.FDC system has good user operation and interactive interface, and possesses diversified condition setting.
Ion implantation process is a subprocess of whole semiconductor processes, often with other processes, and dependent process.In the present embodiment, for the sake of simplicity, will the description of other processes be omitted, and the conventional steps in ion implantation process will also suitably be omitted, only illustrate in ion implantation process how to reach ageing stronger monitoring temperature.Be understandable that, the ion implantation process of the present embodiment is applicable to any semiconductor processes needing this process.
As shown in Figure 2, the temperature monitoring method in the ion implantation process of an embodiment comprises the steps.
Step S101: start ion implantation process.After the preposition process (such as photoetching process) of ion implantation process has processed, ion implantation process can be started.Mainly silicon chip 210 is moved to target platform, energy ion to be implanted being accelerated to setting and the dosage etc. controlled in setting.
Step S102: the vacuum degree in Real-Time Monitoring ion implantation process, and compare with the safe vacuum degree scope preset.Ion implantation advance process in, due to photoresist at high temperature there is metamorphosis time, the vacuum degree in vacuum chamber 10 likely can change, and therefore the temperature of silicon chip can be reflected in the vacuum degree in vacuum chamber 10.Variations in temperature can be known by Real-Time Monitoring vacuum degree.
The present embodiment detects vacuum degree in vacuum chamber 10 by error detection and classification (fault detection and classification, FDC) system.
Above-mentioned safe vacuum degree scope is the multiple scopes corresponding respectively with multiple different phase of ion implantation process, such as, in ten minutes of incipient stage, vacuum degree is the process reduced gradually greatly, will keep vacuum degree comparatively stably afterwards, can reference diagram 3.Fig. 3 injects AS/80KV/4.2E15 with certain product NSD IMP() test the normalized curve and abnormal curve that obtain.When normalized curve refers to that final products parameter is normal, the vacuum degree situation of change in vacuum chamber 10; When abnormal curve refers to final products abnormal parameters, the vacuum degree situation of change in vacuum chamber 10.Can find out that the vacuum degree of the two has obvious difference, and the vacuum degree of the plateau of normalized curve is approximately 3.8E-6, and the vacuum degree of the plateau of abnormal curve is approximately 2.8E-6 in the vacuum degree stage comparatively stably.Safe vacuum degree scope in this ion implantation process can be arranged near 3.8E-6 thus, and not contain the value near 2.8E-6.Other concrete ion implantation process can be arranged as reference.
Particularly, can in the ion implantation process of certain product one batch, record a large amount of vacuum degree data, whether the parameter detecting respective process product is afterwards normal, that is to say and noly meet preset requirement, if normal, vacuum degree data be included into normal data, otherwise be included into abnormal data, add up respectively for normal data and abnormal data, or set up statistical model etc.Comparatively simple mode adopts maximum in normal data and minimum value as two end values of safe vacuum degree scope.
After obtaining this safe vacuum degree scope, FDC system can be inputted and arranged.
Step S103: if the vacuum degree of Real-Time Monitoring is outside described safe vacuum degree scope, then perform warning response.The vacuum degree of Real-Time Monitoring represents that outside safe vacuum degree scope current ion implantation process causes once failed technique possibly, is therefore necessary to respond accordingly.The most basic response is warning response, also namely informs relevant technical staff's temperature anomaly, determines how to process by technical staff.Warning way comprises addressee that email notification presets and waits conventional func in FDC system, also can be other feasible warnings.
Further response then can comprise protection response, also namely takes safeguard measure to reduce further loss.Concrete safeguard measure can comprise to be suspended production, stopping injection or shuts down platform etc., can select wherein one or more.
Protection response can perform together with warning response, also only can perform warning response, determine how to process by technical staff.Safe vacuum degree scope can also be divided into several grade, holding your noise according to the ranking score of response should.
Temperature monitoring method in above-mentioned ion implantation process, reflect temperature by the vacuum degree in monitoring vacuum chamber, the Real-Time Monitoring object to temperature can be realized, ageing higher, too high temperature effectively can be prevented the impact of photoresist, improve the yield of product.In addition, because the operating state of cooling system is by well to being badly a process run down, in the present embodiment, as long as be that safe vacuum degree scope arranges a comparatively reasonably lower limit, just can accomplish to prevent in advance.And compared to adopting temperature test paper to obtain the mode of temperature conditions in traditional cooling test (coolingtest), the vacuum degree of Real-time Feedback also more accurately can reflect temperature value.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (7)
1. the temperature monitoring method in ion implantation process, comprises the steps:
Start ion implantation process;
Vacuum degree in Real-Time Monitoring ion implantation process, and compare with the safe vacuum degree scope preset;
If the vacuum degree of Real-Time Monitoring is outside described safe vacuum degree scope, then perform warning response.
2. the temperature monitoring method in ion implantation process according to claim 1, is characterized in that, described safe vacuum degree scope is included in the multiple scopes corresponding respectively with multiple different phase of ion implantation process.
3. the temperature monitoring method in ion implantation process according to claim 1, is characterized in that, described safe vacuum degree scope is multiple scopes of corresponding multiple response grade.
4. the temperature monitoring method in ion implantation process according to claim 1, is characterized in that, also comprises the step of default described safe vacuum degree scope:
Vacuum degree under ion implantation process in record semiconductor processes;
Obtain minimum under the normal process process in all records and peak determines described safe vacuum degree scope;
Wherein, described normal process process refers to that final products parameter meets the technical process of preset requirement.
5. the temperature monitoring method in ion implantation process according to claim 1, is characterized in that, described safe vacuum degree scope is arranged by error detection and categorizing system, and described error detection and categorizing system are also responsible for performing described warning and are responded.
6. the temperature monitoring method in ion implantation process according to claim 4, is characterized in that, the addressee that described warning response comprises to presetting sends Email.
7. the temperature monitoring method in ion implantation process according to claim 4, is characterized in that, if the vacuum degree of Real-Time Monitoring is outside described safe vacuum degree scope, also performs protection response, comprising:
Suspend production, stop injecting or shutting down one or more of response mode of platform.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109616395A (en) * | 2018-12-04 | 2019-04-12 | 上海华力微电子有限公司 | A kind of high current ion implantation apparatus measures the method for maintaining of instruction device |
| CN109801479A (en) * | 2018-12-12 | 2019-05-24 | 西安电子科技大学 | A kind of monitoring of semiconductor processes and early warning system and its control method |
| CN113984275A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment by measuring vacuum degree |
| CN117116813A (en) * | 2023-10-19 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Temperature control capability detection method and device for ion implantation machine |
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| CN102683164A (en) * | 2011-03-10 | 2012-09-19 | 北大方正集团有限公司 | Method and device for monitoring abnormality of ion implanter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109616395A (en) * | 2018-12-04 | 2019-04-12 | 上海华力微电子有限公司 | A kind of high current ion implantation apparatus measures the method for maintaining of instruction device |
| CN109801479A (en) * | 2018-12-12 | 2019-05-24 | 西安电子科技大学 | A kind of monitoring of semiconductor processes and early warning system and its control method |
| CN113984275A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment by measuring vacuum degree |
| CN117116813A (en) * | 2023-10-19 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Temperature control capability detection method and device for ion implantation machine |
| CN117116813B (en) * | 2023-10-19 | 2024-02-09 | 粤芯半导体技术股份有限公司 | Temperature control capability detection method and device for ion implantation machine |
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