CN109616395A - A kind of high current ion implantation apparatus measures the method for maintaining of instruction device - Google Patents
A kind of high current ion implantation apparatus measures the method for maintaining of instruction device Download PDFInfo
- Publication number
- CN109616395A CN109616395A CN201811474691.3A CN201811474691A CN109616395A CN 109616395 A CN109616395 A CN 109616395A CN 201811474691 A CN201811474691 A CN 201811474691A CN 109616395 A CN109616395 A CN 109616395A
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- CN
- China
- Prior art keywords
- measurement
- instruction device
- measurement instruction
- high current
- ion implantation
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of high current ion implantation apparatus, the reaction chamber setting one for being matched with the high current ion implantation apparatus measures instruction device, the measurement instruction device is alerted for measuring to the indoor vacuum values of the reaction chamber, and when the vacuum values are more than preset threshold；It is characterized in that, having one to measure channel between measurement instruction device and the measurement interface of the reaction chamber, and the hand valve being set on the measurement channel by one controls the opening and closing for measuring channel.The present invention has saved the time that replacement measures filament, the steam and particle reduced in air enters in chamber, ensure that the quality of product, also more convenient, practical by providing a kind of method for maintaining of high current ion implantation apparatus measurement instruction device.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing fields more particularly to a kind of high current ion implantation apparatus to measure instruction
The method for maintaining of device.
Background technique
For existing high current ion implantation apparatus when running cargo, the feelings such as filament breaking may be occurred by measuring instruction device
Condition, Facilities Engineer can first carry out measuring filament switching, show normal subsequent reforwarding crudely-made articles object, such as switch NG, Facilities Engineer
Will arrestment, begin to speak to carry out replacement and measure filament.Many time can be not only wasted in this way, also will increase steam, so that
Impurity in air enters in chamber.
Summary of the invention
The object of the present invention is to provide the method for maintaining that a kind of high current ion implantation apparatus measures instruction device, are used for
Solve the above technical problem.Technical problem solved by the invention can be realized using following technical scheme:
A kind of high current ion implantation apparatus, the reaction chamber setting one for being matched with the high current ion implantation apparatus, which measures, to be referred to
Showing device, the measurement instruction device surpass for measuring to the indoor vacuum values of the reaction chamber, and in the vacuum values
It is alerted when crossing preset threshold；It is characterized in that, having between measurement instruction device and the measurement interface of the reaction chamber
One measures channel, and the hand valve being set on the measurement channel by one controls the opening and closing for measuring channel；
When needing to repair the measurement instruction device, the measurement channel is closed by controlling the hand valve,
Then the measurement instruction device is repaired again.
Preferably, measurement indicator light is provided in the measurement instruction device；
The measurement instruction device is repaired by replacing the measurement filament in the measurement indicator light.
Preferably, multiple measurement indicator lights are provided in the measurement instruction device；
The measurement instruction device is also connected with the control system outside one, when current just in work in the measurement instruction device
When the measurement indicator light made breaks down, the control system switches to others for controlling the measurement instruction device
The measurement indicator light simultaneously works；
When all measurement indicator lights in the measurement instruction device break down, then the measurement is indicated
Device repairs.
Preferably, the hand valve is connected by sealing ring and clip with the measurement instruction device and the measurement interface.
Preferably, a kind of method for maintaining measuring instruction device, is suitable for high current ion implantation apparatus, is matched with the height
The reaction chamber setting one of current implanters measures instruction device, and the measurement instruction device is used for the reaction chamber
Interior vacuum values are measured, and are alerted when the vacuum values are more than preset threshold；It is characterized in that, the measurement instruction dress
Set has one to measure channel between the measurement interface of the reaction chamber, and the hand on the measurement channel is set to by one
Valve controls the opening and closing for measuring channel；
The method for maintaining includes:
Step S1 closes the high current ion implantation apparatus when needing to repair the measurement instruction device
Turbine pump, so that the high current ion implantation apparatus stops working；
Step S2 closes the measurement channel by the hand valve；
Step S3 repairs the measurement instruction device, and finishes rear steering step S4 in maintenance；
Step S4 opens the measurement channel by the hand valve；
Step S5 opens the turbine pump, so that the high current ion implantation apparatus restarts work.
Preferably, measurement indicator light is provided in the measurement instruction device；
In the step S3, the measurement instruction device is carried out by replacing the measurement filament in the measurement indicator light
Maintenance.
Preferably, multiple measurement indicator lights are provided in the measurement instruction device；
The measurement instruction device is also connected with the control system outside one, when current just in work in the measurement instruction device
When the measurement indicator light made breaks down, the control system controls the measurement instruction device and switches to described in others
It measures indicator light and works；
When all measurement indicator lights in the measurement instruction device break down, then start to execute the step
Rapid S1.
Preferably, the hand valve is connected by sealing ring and clip with the measurement instruction device and the measurement interface.
The beneficial effects of the present invention are:
By a kind of high current ion implantation apparatus measure instruction device method for maintaining, saved replacement measure filament when
Between, the steam and particle reduced in air enters in chamber, ensure that the quality of product, also more convenient, practical.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is method for maintaining flow chart of steps of the invention.
Appended drawing reference indicates explanation in description above:
1, reaction chamber；2, hand valve；3, instruction device is measured.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
As shown in Figure 1, a kind of method for maintaining for measuring instruction device, is suitable for high current ion implantation apparatus, is matched with height
The setting of reaction chamber (process chamber) 1 one of current implanters measures instruction device (IG3) 3, measures instruction dress
3 are set for measuring to the vacuum values in reaction chamber 1, and alert when vacuum values are more than preset threshold；Measure instruction dress
Setting between 3 and the measurement interface of reaction chamber 1 has one to measure channel, and is set to the hand valve 2 measured on channel by one and controls
System measures the opening and closing in channel；
When needing to repair measurement instruction device 3, is closed by control hand valve 2 and measure channel, then again to amount
Instruction device 3 is surveyed to repair.
In preferred embodiments of the present invention, measures in instruction device 3 and be provided with multiple measurement indicator lights；Measure instruction device
3 are also connected with the control system outside one, when the measurement indicator light being currently operating in measurement instruction device 3 breaks down,
Control system control measures instruction device 3 and switches to other measurement indicator lights and work；When in measurement instruction device 3
When all measurement indicator lights break down, then repaired to instruction device 3 is measured.
As shown in Fig. 2, method for maintaining includes: to close high current ion when needing to repair measurement instruction device 3
The turbine pump (turbo pump) of implanter, so that high current ion implantation apparatus stops working；It closes to measure by hand valve 2 again and lead to
Road；It is repaired to instruction device 3 is measured, specifically, the measurement filament (gauge in indicator light is measured by replacement
Filament) measurement instruction device 3 is repaired, the measurement channel is then opened by hand valve 2；Turbine pump is opened, with
High current ion implantation apparatus is set to restart work.
In preferred embodiments of the present invention, hand valve 2 passes through sealing ring and clip and measurement instruction device 3 and measurement interface phase
It connects.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (8)
1. a kind of high current ion implantation apparatus, the reaction chamber setting one for being matched with the high current ion implantation apparatus measures instruction
Device, the measurement instruction device are more than in the vacuum values for measuring to the indoor vacuum values of the reaction chamber
It is alerted when preset threshold；It is characterized in that, having one between measurement instruction device and the measurement interface of the reaction chamber
Channel is measured, and the hand valve being set on the measurement channel by one controls the opening and closing for measuring channel；
When needing to repair the measurement instruction device, the measurement channel is closed by controlling the hand valve, then
The measurement instruction device is repaired again.
2. a kind of high current ion implantation apparatus according to claim 1, which is characterized in that be arranged in the measurement instruction device
There is measurement indicator light；
The measurement instruction device is repaired by replacing the measurement filament in the measurement indicator light.
3. a kind of high current ion implantation apparatus according to claim 2, which is characterized in that be arranged in the measurement instruction device
There are multiple measurement indicator lights；
The measurement instruction device is also connected with the control system outside one, when what is be currently operating in the measurement instruction device
When the measurement indicator light breaks down, the control system switches to described in others for controlling the measurement instruction device
It measures indicator light and works；
When all measurement indicator lights in the measurement instruction device break down, then to the measurement instruction device
It repairs.
4. a kind of high current ion implantation apparatus according to claim 1, which is characterized in that the hand valve passes through sealing ring and card
Hoop connects with the measurement instruction device and the measurement interface.
5. a kind of method for maintaining for measuring instruction device, is suitable for high current ion implantation apparatus, is matched with the high current ion
The reaction chamber setting one of implanter measures instruction device, and the measurement instruction device is used for the indoor vacuum of the reaction chamber
Value is measured, and is alerted when the vacuum values are more than preset threshold；It is characterized in that, the measurement instruction device with it is described
Have one to measure channel between the measurement interface of reaction chamber, and the hand valve being set on the measurement channel by one controls institute
State the opening and closing for measuring channel；
The method for maintaining includes:
Step S1 closes the turbine of the high current ion implantation apparatus when needing to repair the measurement instruction device
Pump, so that the high current ion implantation apparatus stops working；
Step S2 closes the measurement channel by the hand valve；
Step S3 repairs the measurement instruction device, and finishes rear steering step S4 in maintenance；
Step S4 opens the measurement channel by the hand valve；
Step S5 opens the turbine pump, so that the high current ion implantation apparatus restarts work.
6. method for maintaining according to claim 5, which is characterized in that be provided with measurement instruction in the measurement instruction device
Lamp；
In the step S3, the measurement instruction device is tieed up by replacing the measurement filament in the measurement indicator light
It repairs.
7. method for maintaining according to claim 6, which is characterized in that be provided with multiple measurements in the measurement instruction device
Indicator light；
The measurement instruction device is also connected with the control system outside one, when what is be currently operating in the measurement instruction device
When the measurement indicator light breaks down, the control system controls the measurement instruction device and switches to other measurements
Indicator light simultaneously works；
When all measurement indicator lights in the measurement instruction device break down, then start to execute the step
S1。
8. method for maintaining according to claim 5, which is characterized in that the hand valve passes through sealing ring and clip and the amount
It surveys instruction device and the measurement interface connects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811474691.3A CN109616395B (en) | 2018-12-04 | 2018-12-04 | Maintenance method of measurement indicating device of high-current ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811474691.3A CN109616395B (en) | 2018-12-04 | 2018-12-04 | Maintenance method of measurement indicating device of high-current ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109616395A true CN109616395A (en) | 2019-04-12 |
| CN109616395B CN109616395B (en) | 2021-05-21 |
Family
ID=66006850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811474691.3A Active CN109616395B (en) | 2018-12-04 | 2018-12-04 | Maintenance method of measurement indicating device of high-current ion implanter |
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| Country | Link |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0660843A (en) * | 1992-08-10 | 1994-03-04 | Sharp Corp | Semiconductor manufacturing device |
| US5528164A (en) * | 1994-08-01 | 1996-06-18 | Nec Electronics, Inc. | Modification to a Y-scan monitor circuit |
| JPH1021868A (en) * | 1996-07-01 | 1998-01-23 | Nissin Electric Co Ltd | Ion implanting apparatus |
| CN200953337Y (en) * | 2006-10-09 | 2007-09-26 | 中芯国际集成电路制造(上海)有限公司 | Implantation machine vacuum tube line structure |
| JP2013206546A (en) * | 2012-03-27 | 2013-10-07 | Renesas Electronics Corp | Ion implanter |
| CN104851819A (en) * | 2014-02-17 | 2015-08-19 | 无锡华润上华科技有限公司 | Method for temperature monitoring in ion implantation process |
| CN204834562U (en) * | 2015-07-28 | 2015-12-02 | 南京信息工程大学 | Implanter controlling means |
| CN207250467U (en) * | 2017-09-22 | 2018-04-17 | 德淮半导体有限公司 | Wafer processing device |
-
2018
- 2018-12-04 CN CN201811474691.3A patent/CN109616395B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0660843A (en) * | 1992-08-10 | 1994-03-04 | Sharp Corp | Semiconductor manufacturing device |
| US5528164A (en) * | 1994-08-01 | 1996-06-18 | Nec Electronics, Inc. | Modification to a Y-scan monitor circuit |
| JPH1021868A (en) * | 1996-07-01 | 1998-01-23 | Nissin Electric Co Ltd | Ion implanting apparatus |
| CN200953337Y (en) * | 2006-10-09 | 2007-09-26 | 中芯国际集成电路制造(上海)有限公司 | Implantation machine vacuum tube line structure |
| JP2013206546A (en) * | 2012-03-27 | 2013-10-07 | Renesas Electronics Corp | Ion implanter |
| CN104851819A (en) * | 2014-02-17 | 2015-08-19 | 无锡华润上华科技有限公司 | Method for temperature monitoring in ion implantation process |
| CN204834562U (en) * | 2015-07-28 | 2015-12-02 | 南京信息工程大学 | Implanter controlling means |
| CN207250467U (en) * | 2017-09-22 | 2018-04-17 | 德淮半导体有限公司 | Wafer processing device |
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| Publication number | Publication date |
|---|---|
| CN109616395B (en) | 2021-05-21 |
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