CN117116813A - Temperature control capability detection method and device for ion implantation machine - Google Patents
Temperature control capability detection method and device for ion implantation machine Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The embodiment of the application discloses a temperature control capability detection method and device for an ion implantation machine. According to the scheme, the first preset number of test wafers can be subjected to thermal oxidation treatment and coated with photoresist, the first preset number of test wafers are conveyed to the end in a conveying box containing the second preset number of bare wafers, the formula parameter with the largest total heat of wafer products in the ion implantation process is obtained, ion implantation treatment is carried out on all wafers in the conveying box based on the formula parameter, defect scanning is carried out on the treated test wafers, and whether the temperature control capability of a current ion implanter is qualified or not is determined according to a scanning result. According to the application, the test wafer is inserted into the tail end of the bare wafer, the ion implantation is carried out on the whole wafer conveying box, and finally the temperature control capability of the ion implantation machine is obtained through the defect scanning of the test wafer, so that the temperature control capability detection efficiency and accuracy of the machine are greatly improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a temperature control capability detection method and device for an ion implantation machine.
Background
In integrated circuit production, wafer temperature during ion implantation is a relatively important parameter that directly affects the gas contamination of the photoresist and the lattice change inside the wafer. When the wafer temperature is too high, the surface photoresist can bulge, even bulge is broken, the area covered by the photoresist and incapable of being implanted is implanted, the product yield is low, and the wafer is scrapped, so that the detection of the temperature control capability of the ion implantation machine has important significance for ion implantation.
In the prior art, the temperature of an ion implantation machine for detecting the wafer when the wafer is implanted on an electrostatic chuck is tested by using temperature test paper, specifically, the temperature test paper is stuck to different positions on the surface of a bare wafer, then the test paper is covered by using copper foil or aluminum foil, the wafer is implanted according to the parameter formula of a normal product, finally, the copper foil or aluminum foil covered with the test paper is torn off, and the temperature of the point where the test paper is positioned on the wafer is subjected to ion implantation can be judged according to the color change of the temperature test paper, so that the temperature control capability of the machine is obtained.
However, the applicant found that the temperature control capability detection method in the prior art needs to manually take out the wafer from the wafer transfer box to attach the temperature test paper, which is not only cumbersome in steps but also easy to pollute the wafer, and can only detect the coverage area of the test paper, so that other areas of the wafer are lack of detection, and the finally obtained detection result of the temperature control capability of the ion implanter is inaccurate.
Disclosure of Invention
The application provides a temperature control capability detection method and a temperature control capability detection device for an ion implantation machine, which can insert a test wafer into the tail end of a bare wafer, perform ion implantation on the whole wafer conveying box, and finally obtain the temperature control capability of the ion implantation machine through defect scanning of the test wafer, thereby greatly improving the temperature control capability detection efficiency and accuracy of the machine.
The application provides a temperature control capability detection method of an ion implantation machine, which comprises the following steps:
performing thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
transferring the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers;
acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process, and carrying out ion implantation treatment on all wafers in the transfer box based on the formula parameter;
and performing defect scanning on the processed test wafer to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to a scanning result.
Optionally, the performing thermal oxidation treatment on the first preset number of test wafers and coating photoresist includes:
performing thermal oxidation treatment on a first preset number of test wafers so as to cover oxide films on the test wafers;
and uniformly coating photoresist on the surface of the oxide film by a rotating method or a soaking method.
Optionally, the obtaining the recipe parameter with the maximum total heat of the wafer product in the ion implantation process includes:
acquiring beam power and processing time parameters with the largest temperature variation in the ion implantation process of the wafer product in a preset time period;
and taking the beam power and the processing duration parameter as the formula parameter.
Optionally, the determining whether the temperature control capability of the ion implantation station is qualified according to the scanning result includes:
acquiring the number and area of the photoresist bulges of the test wafer in the scanning result;
and if the number of the bulges and the bulge area of the photoresist are smaller than the preset value, confirming that the temperature control capability of the ion implantation machine is qualified.
Optionally, after performing defect scanning on the processed test wafer, the method further includes:
and removing the oxide film and photoresist from the test wafer by wet etching.
Optionally, before performing ion implantation processing on all the wafers in the transfer box, the method further includes:
and reducing the thickness of the heat conducting medium of the electrostatic chuck in the ion implantation machine.
Optionally, before performing ion implantation processing on all the wafers in the transfer box, the method further includes:
and increasing the temperature of a refrigerating piece in the ion implantation machine.
The application also provides a temperature control capability detection device of the ion implantation machine, comprising:
the pretreatment module is used for carrying out thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
the transmission module is used for transmitting the first preset number of test wafers to the tail in a transmission box containing a second preset number of bare wafers;
the ion implantation module is used for acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process and carrying out ion implantation treatment on all wafers in the conveying box based on the formula parameter;
and the scanning module is used for carrying out defect scanning on the processed test wafer so as to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to the scanning result.
The application also provides electronic equipment, which is characterized by comprising a memory and a processor, wherein the memory stores a computer program, and the processor executes the steps in the temperature control capability detection method of the ion implantation machine by calling the computer program stored in the memory.
The present application also provides a storage medium, wherein the storage medium stores a computer program, and the computer program is suitable for being loaded by a processor, so as to execute the steps in the method for detecting the temperature control capability of the ion implantation machine provided by any one of the present application.
According to the temperature control capability detection method of the ion implantation machine provided by the application, the first preset number of test wafers can be subjected to thermal oxidation treatment and coated with photoresist, the first preset number of test wafers are conveyed to the end in the conveying box containing the second preset number of bare wafers, the formula parameter with the largest total heat of wafer products in the ion implantation process is obtained, ion implantation treatment is carried out on all wafers in the conveying box based on the formula parameter, and defect scanning is carried out on the treated test wafers, so that whether the temperature control capability of the current ion implantation machine is qualified or not is determined according to the scanning result. According to the application, the test wafer is inserted into the tail end of the bare wafer, the ion implantation is carried out on the whole wafer conveying box, and finally the temperature control capability of the ion implantation machine is obtained through the defect scanning of the test wafer, so that the temperature control capability detection efficiency and accuracy of the machine are greatly improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for detecting temperature control capability of an ion implanter according to an embodiment of the present application;
fig. 2 is a schematic flow chart of another method for detecting temperature control capability of an ion implanter according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a defect scan result of an ion implanter according to an embodiment of the present application;
FIG. 4 is a statistical diagram of defect scan results of an ion implanter according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a temperature control capability detection device of an ion implanter according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element defined by the phrase "comprising one … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element, and furthermore, elements having the same name in different embodiments of the application may have the same meaning or may have different meanings, the particular meaning of which is to be determined by its interpretation in this particular embodiment or by further combining the context of this particular embodiment.
It should be understood that, although the steps in the flowcharts in the embodiments of the present application are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the figures may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily occurring in sequence, but may be performed alternately or alternately with other steps or at least a portion of the other steps or stages.
It should be noted that, in this document, step numbers such as 101 and 102 are used for the purpose of more clearly and briefly describing the corresponding contents, and not to constitute a substantial limitation on the sequence, and those skilled in the art may execute 102 first and then execute 101 when they are implemented, which is within the scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The embodiment of the application provides a temperature control capability detection method of an ion implantation machine, and an execution main body of the temperature control capability detection method of the ion implantation machine can be the temperature control capability detection device of the ion implantation machine provided by the embodiment of the application or a server integrated with the temperature control capability detection device of the ion implantation machine, wherein the temperature control capability detection device of the ion implantation machine can be realized in a hardware or software mode.
As shown in fig. 1, fig. 1 is a schematic flow chart of a method for detecting temperature control capability of an ion implantation apparatus according to an embodiment of the present application, where a specific flow of the method for detecting temperature control capability of an ion implantation apparatus may be as follows:
101. and performing thermal oxidation treatment on the first preset number of test wafers and coating photoresist.
The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor circuit, and the original material of the wafer is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The wafers may be all wafers produced in a certain batch, and the number of the wafers is a first preset number, for example, 5 wafers.
In one embodiment, an oxide film is formed on the test wafer, specifically, the oxidation process for forming a thin film on the wafer includes thermal oxidation (Thermal Oxidation) by heat, plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), electrochemical anodization, and the like. The method used in this embodiment is a thermal oxidation method, for example, a thin and uniform silicon oxide film is formed at a high temperature of 800-1200 ℃, and the thickness of the oxide film may be 100A.
Furthermore, photoresist, namely photoresistor, is smeared on the basis of the oxide film, and is a photosensitive material with local solubility change under the irradiation of a specific light source, and is mainly used for photoetching links in the manufacture of integrated circuits. When photoetching is carried out, photoresist is smeared on a silicon wafer, a pre-designed circuit pattern is printed on a mask, light irradiates the photoresist through the mask, the photoresist can form a pattern consistent with a mask plate on a wafer after the action of developing solution, and then the pattern on the mask plate is transferred to the wafer through etching.
102. And transferring the first preset number of test wafers to the end in a transfer box containing the second preset number of bare wafers.
In an embodiment, the second predetermined number may be 20, and the bare wafer is an unprocessed wafer, that is, a wafer that is not thermally oxidized and coated with photoresist. Specifically, the 5 wafers processed in step 101 may be transferred to the last of a FOUP (Front Opening Unified Pod, wafer transfer box), where the FOUP is a container used in semiconductor manufacturing process for protecting, transporting, and storing the wafers, and may contain 25 wafers of 300mm, and its main component is a front opening container capable of containing 25 wafers and an open/close door frame dedicated container, which is an important transfer container dedicated to an automated transfer system in a 12 inch (300 mm) wafer factory.
In other embodiments, the positions of the test wafers may be flexibly adjusted in the FOUP, for example, the 5 test wafers are respectively placed at the 5 th, 10 th, 15 th, 20 th and 25 th positions of the FOUP, so that the temperature control capability corresponding to different position intervals of the FOUP can be obtained during the subsequent defect scanning. The position of the test wafer can be adjusted to other positions in the FOUP according to actual requirements, which is not further limited in the present application.
103. And acquiring the formula parameter of the wafer product with the maximum total heat in the ion implantation process, and performing ion implantation treatment on all wafers in the transfer box based on the formula parameter.
Ion implantation is a process in which energetic ions are used to directly bombard a substrate (substrate) to deposit chemicals into the substrate. In semiconductor manufacturing, ion implanters are mainly used in doping processes to change the conductivity (conductivity) type and level of the target material. The precise doping profile (dopingprofile) in Integrated Circuit (IC) substrates and their thin film structures is important to ensure integrated circuit performance. To achieve the desired doping profile, different doses (dose) and different energies (implant) are used to implant one or more ion species.
In the embodiment of the application, since the temperature control performance of the ion implantation machine needs to be tested, the most extreme case can be selected for detection, that is, the formula parameter (recipe) with the largest total heat generated by the wafer product in the historical ion implantation process can be used for performing ion implantation on the test wafer and the bare wafer in the FOUP, for example, the whole wafer is dispatched to the ion implantation machine needing to perform defect scanning through a dispatching system for processing. The recipe parameters of the ion implantation include parameters such as ion type, ion dose, loss of energy (specification), beam power and processing time.
104. And performing defect scanning on the processed test wafer to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to a scanning result.
In one embodiment, after the ion implantation is completed, the defect scan (defect scan) can be performed on the last 5 wafers by using the metrology tool, and whether the cooling test of the ion implantation tool E-chuck passes or not and whether the temperature control capability is qualified can be determined according to the defect result.
Specifically, by the temperature control capability detection method provided by the embodiment of the application, when the temperature control capability of the ion implantation machine E-chuck is slightly reduced, the phenomenon that the wafer surface photoresist bulges or a small part of bulges bursts is detected, and the products in the bulge area are abnormal, so that the final unqualified temperature control capability is judged. In addition, the photoresist at the wafer edge is more likely to bulge or bulge rupture, and the conventional cooling test can only detect the area where the test paper is located, but the method provided by the application can detect the whole area. And along with heat accumulation, the higher the temperature is in the wafer process of the last process in one wafer, the higher the temperature is, and the condition that the temperature is higher and higher can not be detected by using a conventional cooling test method only by using one wafer, but the real condition of the product process can be completely simulated by using the method, and the condition that the temperature is higher and higher can be detected.
In view of the foregoing, the method for detecting the temperature control capability of the ion implantation machine according to the embodiment of the present application may perform thermal oxidation treatment on a first preset number of test wafers and apply photoresist, transfer the first preset number of test wafers to the end of a transfer box containing a second preset number of bare wafers, obtain a recipe parameter with the largest total heat of wafer products during ion implantation, perform ion implantation treatment on all wafers in the transfer box based on the recipe parameter, and perform defect scanning on the test wafers after treatment, so as to determine whether the temperature control capability of the current ion implantation machine is qualified according to a scanning result. According to the application, the test wafer is inserted into the tail end of the bare wafer, the ion implantation is carried out on the whole wafer conveying box, and finally the temperature control capability of the ion implantation machine is obtained through the defect scanning of the test wafer, so that the temperature control capability detection efficiency and accuracy of the machine are greatly improved.
The method according to the previous embodiments will be described in further detail below.
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for detecting temperature control capability of an ion implanter according to an embodiment of the application. The method comprises the following steps:
201. and performing thermal oxidation treatment on the first preset number of test wafers so as to cover the test wafers with the oxide film.
202. And uniformly coating photoresist on the surface of the oxide film by a rotating method or a soaking method.
In one embodiment, photoresist may be applied by a spin method or a dip method, for example, the photoresist is first deposited at the center of the wafer by a dripper, then spun to spread the photoresist, and then spun at a high speed to spin off the excess photoresist. During the high-speed rotation, a part of the solvent in the photoresist may volatilize.
In one embodiment, to control the cost of the photoresist, high-end photoresist such as EUV or ArF/ArFi products can be used in the most important area, and g/i line and KrF photoresist with relatively low technical performance requirements are used in the rest parts, so that the use cost is reduced.
203. And transferring the first preset number of test wafers to the end in a transfer box containing the second preset number of bare wafers.
In an embodiment, the first preset number may be 5 pieces, the second preset number may be 20 pieces, and specifically, the processed 5 pieces of test wafers may be transferred to the last of the FOUP. As the temperature of the machine is higher and higher along with the ion implantation process, the temperature control performance of the machine with the highest temperature can be obtained when the test wafer is placed to the end during the subsequent defect detection, and the test data is also more referential.
204. And acquiring the beam power and the processing time length parameter with the largest temperature variation in the ion implantation process of the wafer product in a preset time period, and taking the beam power and the processing time length parameter as recipe parameters.
In the embodiment of the application, the selection of the ion implantation conditions is generally based on the fact that the direct with the largest total heat generated during the single wafer implantation of the product is used as the ion implantation direct of the route monitor. The calculation formula of the total heat generated during monolithic wafer injection is as follows: the IMP protocol used in this example may be as+/60KeV/5.1e15ions/cm-2, where beam current is 15mA,process time is 90S and the total heat calculated is q=60000×0.015×90= 75600J.
205. Ion implantation is performed on all wafers in the cassette based on recipe parameters.
In one embodiment, the method may further comprise, prior to ion implantation of all wafers in the transfer box: the thickness of the heat conducting medium of the electrostatic chuck in the ion implantation machine is reduced, and/or the temperature of the refrigerating piece in the ion implantation machine is increased. Specifically, by reducing the backsides gas of the E-chuck (the gas is a medium for heat transfer between wafer and E-chuck when the gas is a process), and increasing the temperature of the E-chuck (the temperature of the E-chuck is directly and greatly influenced by increasing the temperature of the wafer, so that heat cannot be timely dissipated when the wafer is processed), the temperature control capability of the E-chuck is gradually deteriorated, and thus the temperature control performance in the most extreme environment can be detected.
206. And performing defect scanning on the processed test wafer to obtain the number of photoresist bulges and the bulge area of the test wafer in the scanning result.
Specifically, after the ion implantation is completed, the defect scan (defect scan) may be performed on the last 5 wafers by using the measuring machine, so as to obtain the number of photoresist bulges and the bulge area in the test wafer, and an example of the detection result is shown in fig. 3.
207. And if the number of the bulges of the photoresist and the bulge area are smaller than the preset value, confirming that the temperature control capability of the ion implantation machine is qualified.
In an embodiment, referring to fig. 4, fig. 4 shows a scan result 1 under the normal temperature control of the machine, a scan result 2 under the back side gas of E-chuck reduction, and a scan result 3 under the elevated temperature of E-chuck. Wherein, the number of photoresist bulges or bursts of 5 test wafers is 0 as shown in scan result 1, 146, 155, 191, 199 and 223 as shown in scan result 2, 289, 366, 427, 477 and 605 as shown in scan result 3. Therefore, the temperature control capability of the ion implantation machine corresponding to the scanning result 1 can be determined to be qualified, and the temperature control capability of the ion implantation machine corresponding to the scanning result 2 and the scanning result 3 can be determined to be unqualified.
In an embodiment, for an ion implantation machine with unqualified temperature control capability, the serial number information of the ion implantation machine can be obtained, and a prompt message is generated and displayed according to the serial number information, so that an operator is reminded. Specifically, an alarm can be sent out through the detection equipment, and the serial numbers of the ion implantation machine with unqualified temperature control capability are displayed through the display screen. Wherein the detection device may be provided with an alarm indicator lamp which is normally on or blinks when an alarm is given by the alarm indicator lamp.
208. And removing the oxide film and photoresist on the test wafer by wet etching.
In one embodiment, the test wafer after the defect scanning can be subjected to oxide film removal and photoresist removal, so that the test wafer can be reused. Such as by Wet Etch or Wet Removal. Specifically, wet etching of silicon oxide typically uses hydrofluoric acid (HF) as the primary chemical carrier. To increase selectivity, dilute hydrofluoric acid buffered with ammonium fluoride is used in the process. To maintain a stable pH, small amounts of strong acids or other elements may be added. Doped silicon oxide is more prone to corrosion than pure silicon oxide. Wet chemical stripping is mainly used to remove photoresist and hard mask (silicon nitride). Hot phosphoric acid (H3 PO 4) is the main chemical solution for removing silicon nitride by wet chemical stripping, and has a good selectivity for silicon oxide. Prior to such chemical stripping processes, the surface-attached silicon oxide needs to be pretreated with HF acid in order to uniformly remove the silicon nitride.
In the above-mentioned manner, the temperature control capability detection method of the ion implantation machine provided by the embodiment of the application may perform thermal oxidation treatment on a first preset number of test wafers, so as to cover an oxide film on the test wafers, uniformly smear photoresist on the surface of the oxide film by a rotation method or a soaking method, transfer the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers, obtain beam power and processing duration parameters with the largest temperature variation in the ion implantation process of wafer products in a preset time period, perform ion implantation treatment on all wafers in the transfer box based on the recipe parameters, perform defect scanning on the processed test wafers, obtain the photoresist bulge number and bulge area of the test wafers in the scanning result, confirm that the temperature control capability of the ion implantation machine is qualified if the photoresist bulge number and bulge area are smaller than the preset value, and perform wet etching treatment on the test wafers to remove the oxide film and photoresist. According to the application, the test wafer is inserted into the tail end of the bare wafer, the ion implantation is carried out on the whole wafer conveying box, and finally the temperature control capability of the ion implantation machine is obtained through the defect scanning of the test wafer, so that the temperature control capability detection efficiency and accuracy of the machine are greatly improved.
In order to implement the above method, the embodiment of the application also provides a temperature control capability detection device of the ion implantation machine, which can be integrated in terminal equipment such as a mobile phone, a tablet personal computer and the like.
For example, as shown in fig. 5, a first structural schematic diagram of a temperature control capability detection device of an ion implantation apparatus according to an embodiment of the present application is shown. The temperature control capability detection device of the ion implantation machine can comprise:
a pretreatment module 301, configured to perform thermal oxidation treatment on a first preset number of test wafers and apply photoresist;
a transfer module 302, configured to transfer, among transfer cassettes containing a second preset number of bare wafers, the first preset number of test wafers to the end;
the ion implantation module 303 is configured to obtain a recipe parameter with the maximum total heat of the wafer product during ion implantation, and perform ion implantation on all the wafers in the transfer box based on the recipe parameter;
and the scanning module 304 is configured to perform defect scanning on the processed test wafer, so as to determine whether the current temperature control capability of the ion implanter is qualified according to the scanning result.
As can be seen from the above, the temperature control capability detection device for an ion implantation machine provided by the embodiment of the present application can perform thermal oxidation treatment on a first preset number of test wafers and smear photoresist, and transfer the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers, obtain a recipe parameter with the largest total heat of wafer products in the ion implantation process, perform ion implantation treatment on all the wafers in the transfer box based on the recipe parameter, and perform defect scanning on the processed test wafers, so as to determine whether the temperature control capability of the current ion implantation machine is qualified according to the scanning result. According to the application, the test wafer is inserted into the tail end of the bare wafer, the ion implantation is carried out on the whole wafer conveying box, and finally the temperature control capability of the ion implantation machine is obtained through the defect scanning of the test wafer, so that the temperature control capability detection efficiency and accuracy of the machine are greatly improved.
All the above technical solutions may be combined to form an optional embodiment of the present application, and will not be described in detail herein.
Those of ordinary skill in the art will appreciate that all or a portion of the steps of the various methods of the above embodiments may be performed by instructions, or by instructions controlling associated hardware, which may be stored in a computer-readable storage medium and loaded and executed by a processor.
To this end, an embodiment of the present application provides a computer readable storage medium storing a plurality of computer programs capable of being loaded by a processor to execute steps in any one of the methods for detecting a temperature control capability of an ion implanter provided by the embodiment of the present application. For example, the computer program may perform the steps of:
performing thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
transferring the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers;
acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process, and carrying out ion implantation treatment on all wafers in the transfer box based on the formula parameter;
and performing defect scanning on the processed test wafer to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to a scanning result.
The specific implementation of each operation above may be referred to the previous embodiments, and will not be described herein.
Wherein the storage medium may include: read Only Memory (ROM), random access Memory (RAM, random Access Memory), magnetic or optical disk, and the like.
The steps in the method for detecting the temperature control capability of any ion implantation machine provided by the embodiment of the present application can be executed by the computer program stored in the storage medium, so that the beneficial effects that can be achieved by the method for detecting the temperature control capability of any ion implantation machine provided by the embodiment of the present application can be achieved, which are detailed in the previous embodiments and are not described herein.
The embodiment of the application also provides an electronic device, which comprises a memory and a processor, wherein the memory is used for storing a computer program, and the processor is used for calling and running the computer program from the memory, so that the device provided with the chip executes the method in the various possible implementation modes.
For example, the computer device may be a terminal device having a corresponding function, such as a mobile phone, a tablet computer, a personal computer, a cloud computer, or the like. Referring to fig. 6, fig. 6 is a schematic structural diagram of a computer according to an embodiment of the application.
The computer device 400 may include a memory 401, a processor 402, and the like. Those skilled in the art will appreciate that the computer device structure shown in FIG. 6 is not limiting of the computer device and may include more or fewer components than shown, or may be combined with certain components, or a different arrangement of components.
Memory 401 may be used to store applications and data. The memory 401 stores an application program including executable code. Applications may constitute various functional modules. The processor 402 executes various functional applications and data processing by running application programs stored in the memory 401.
The processor 402 is a control center of the computer device, connects various parts of the entire computer device using various interfaces and lines, and performs various functions of the computer device and processes data by running or executing application programs stored in the memory 401, and calling data stored in the memory 401, thereby performing overall monitoring of the computer device.
In this embodiment, the processor 402 in the computer device loads executable codes corresponding to the processes of one or more application programs into the memory 401 according to the following instructions, and the processor 402 executes the application programs stored in the memory 401, so as to execute:
performing thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
transferring the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers;
acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process, and carrying out ion implantation treatment on all wafers in the transfer box based on the formula parameter;
and performing defect scanning on the processed test wafer to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to a scanning result.
It can be understood that the above scenario is merely an example, and does not constitute a limitation on the application scenario of the technical solution provided by the embodiment of the present application, and the technical solution of the present application may also be applied to other scenarios. For example, as one of ordinary skill in the art can know, with the evolution of the system architecture and the appearance of new service scenarios, the technical solution provided by the embodiment of the present application is also applicable to similar technical problems.
The steps in the method of the embodiment of the application can be sequentially adjusted, combined and deleted according to actual needs. The modules in the device of the embodiment of the application can be combined, divided and deleted according to actual needs.
In the present application, the same or similar term concept, technical solution and/or application scenario description will be generally described in detail only when first appearing and then repeatedly appearing, and for brevity, the description will not be repeated generally, and in understanding the present application technical solution and the like, reference may be made to the previous related detailed description thereof for the same or similar term concept, technical solution and/or application scenario description and the like which are not described in detail later.
In the present application, the descriptions of the embodiments are emphasized, and the details or descriptions of the other embodiments may be referred to.
The technical features of the technical scheme of the application can be arbitrarily combined, and all possible combinations of the technical features in the above embodiment are not described for the sake of brevity, however, as long as there is no contradiction between the combinations of the technical features, the application shall be considered as the scope of the description of the application.
In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions in accordance with embodiments of the present application are produced in whole or in part. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by a wired (e.g., coaxial cable, fiber optic, digital subscriber line), or wireless (e.g., infrared, wireless, microwave, etc.). Computer readable storage media can be any available media that can be accessed by a computer or data storage devices, such as servers, data centers, etc., that contain an integration of one or more available media. Usable media may be magnetic media (e.g., floppy disks, storage disks, magnetic tape), optical media (e.g., DVD), or semiconductor media (e.g., solid State Disk), among others.
The above description is provided in detail of a method and apparatus for detecting temperature control capability of an ion implantation apparatus according to the embodiments of the present application, and specific examples are applied to illustrate principles and embodiments of the present application, where the above description of the embodiments is only for helping to understand the method and core idea of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (10)
1. The temperature control capability detection method of the ion implantation machine is characterized by comprising the following steps:
performing thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
transferring the first preset number of test wafers to the end in a transfer box containing a second preset number of bare wafers;
acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process, and carrying out ion implantation treatment on all wafers in the transfer box based on the formula parameter;
and performing defect scanning on the processed test wafer to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to a scanning result.
2. The method for detecting a temperature control capability of an ion implanter according to claim 1, wherein performing a thermal oxidation process on a first predetermined number of test wafers and applying a photoresist comprises:
performing thermal oxidation treatment on a first preset number of test wafers so as to cover oxide films on the test wafers;
and uniformly coating photoresist on the surface of the oxide film by a rotating method or a soaking method.
3. The method for detecting a temperature control capability of an ion implanter according to claim 1, wherein the obtaining the recipe parameter with the maximum total heat of the wafer product during the ion implantation process comprises:
acquiring beam power and processing time parameters with the largest temperature variation in the ion implantation process of the wafer product in a preset time period;
and taking the beam power and the processing duration parameter as the formula parameter.
4. The method for detecting the temperature control capability of an ion implantation station as set forth in claim 1, wherein determining whether the temperature control capability of the ion implantation station is acceptable according to the scan result comprises:
acquiring the number and area of the photoresist bulges of the test wafer in the scanning result;
and if the number of the bulges and the bulge area of the photoresist are smaller than the preset value, confirming that the temperature control capability of the ion implantation machine is qualified.
5. The method of claim 2, further comprising, after performing a defect scan on the processed test wafer:
and removing the oxide film and photoresist from the test wafer by wet etching.
6. The method of claim 1-5, further comprising, prior to performing the ion implantation process on all wafers in the transfer box:
and reducing the thickness of the heat conducting medium of the electrostatic chuck in the ion implantation machine.
7. The method of claim 1-5, further comprising, prior to performing the ion implantation process on all wafers in the transfer box:
and increasing the temperature of a refrigerating piece in the ion implantation machine.
8. The utility model provides a temperature control ability detection device of ion implantation board which characterized in that includes:
the pretreatment module is used for carrying out thermal oxidation treatment on a first preset number of test wafers and coating photoresist;
the transmission module is used for transmitting the first preset number of test wafers to the tail in a transmission box containing a second preset number of bare wafers;
the ion implantation module is used for acquiring the formula parameter with the maximum total heat of the wafer product in the ion implantation process and carrying out ion implantation treatment on all wafers in the conveying box based on the formula parameter;
and the scanning module is used for carrying out defect scanning on the processed test wafer so as to determine whether the temperature control capability of the current ion implantation machine is qualified or not according to the scanning result.
9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, and the processor executes the steps in the method for detecting the temperature control capability of the ion implanter according to any one of claims 1 to 7 by calling the computer program stored in the memory.
10. A storage medium storing a computer program adapted to be loaded by a processor for performing the steps of the method for detecting the temperature control capability of an ion implanter according to any of claims 1-7.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497464A (en) * | 2024-01-03 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Method and device for detecting applicability of photoresist |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190133A (en) * | 1992-01-14 | 1993-07-30 | Nec Corp | Ion implanting device |
| JP2007123056A (en) * | 2005-10-28 | 2007-05-17 | Matsushita Electric Ind Co Ltd | Ion implantation device and ion implantation control method |
| JP2011009007A (en) * | 2009-06-24 | 2011-01-13 | Texas Instr Japan Ltd | Wafer temperature correction system for ion implantation device |
| CN102496586A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting photoresist defects |
| CN102751209A (en) * | 2011-04-17 | 2012-10-24 | 中国科学院微电子研究所 | Method for monitoring ion implantation tool |
| CN104851819A (en) * | 2014-02-17 | 2015-08-19 | 无锡华润上华科技有限公司 | Method for temperature monitoring in ion implantation process |
| CN113571398A (en) * | 2021-07-19 | 2021-10-29 | 广州粤芯半导体技术有限公司 | Temperature monitoring method |
| CN116313876A (en) * | 2023-05-25 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Method for monitoring substrate temperature in ion implantation process |
-
2023
- 2023-10-19 CN CN202311352021.5A patent/CN117116813B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190133A (en) * | 1992-01-14 | 1993-07-30 | Nec Corp | Ion implanting device |
| JP2007123056A (en) * | 2005-10-28 | 2007-05-17 | Matsushita Electric Ind Co Ltd | Ion implantation device and ion implantation control method |
| JP2011009007A (en) * | 2009-06-24 | 2011-01-13 | Texas Instr Japan Ltd | Wafer temperature correction system for ion implantation device |
| CN102751209A (en) * | 2011-04-17 | 2012-10-24 | 中国科学院微电子研究所 | Method for monitoring ion implantation tool |
| CN102496586A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting photoresist defects |
| CN104851819A (en) * | 2014-02-17 | 2015-08-19 | 无锡华润上华科技有限公司 | Method for temperature monitoring in ion implantation process |
| CN113571398A (en) * | 2021-07-19 | 2021-10-29 | 广州粤芯半导体技术有限公司 | Temperature monitoring method |
| CN116313876A (en) * | 2023-05-25 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Method for monitoring substrate temperature in ion implantation process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497464A (en) * | 2024-01-03 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Method and device for detecting applicability of photoresist |
| CN117497464B (en) * | 2024-01-03 | 2024-04-05 | 合肥晶合集成电路股份有限公司 | Method and device for detecting applicability of photoresist |
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