CN104821272A - PN junction diffusion method, gas diffusion apparatus and crystalline silica solar cell - Google Patents
PN junction diffusion method, gas diffusion apparatus and crystalline silica solar cell Download PDFInfo
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- CN104821272A CN104821272A CN201510134303.7A CN201510134303A CN104821272A CN 104821272 A CN104821272 A CN 104821272A CN 201510134303 A CN201510134303 A CN 201510134303A CN 104821272 A CN104821272 A CN 104821272A
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- diffusion
- flow
- junction
- diffusion furnace
- preset
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 2
- 229910002026 crystalline silica Inorganic materials 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 81
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 6
- 238000012986 modification Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000001276 controlling effect Effects 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000004437 phosphorous atom Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a PN junction diffusion method. The PN junction diffusion method comprises the following steps: inserting a silicon chip in a diffusion furnace and increasing a temperature to a first preset temperature; introducing N2-PClO3, O2 and N2 to the diffusion furnace via a diffusion furnace tube, at the same time, regulating and controlling the flow of the N2-PClO3 through a variable flowmeter, and continuing for first preset time; increasing the temperature in the diffusion furnace to a second preset temperature, introducing the O2 with a preset content and the N2 with a preset content, and continuing for second preset time; and after a diffusion process is finished and the temperature of the diffusion furnace is reduced, taking out the silicon chip. According to the PN junction diffusion method disclosed by the invention, the flow of the N2-PClO3 is regulated and controlled through the variable flowmeter, the concentration of phosphorus oxychloride in the diffusion furnace is changed, the diffusion amount of a diffusion source entering the silicon chip is changed, a more obvious concentration gradient is formed, and the photoelectric conversion efficiency of a solar cell is effectively improved.
Description
Technical field
The present invention relates to gas diffusion field, in particular, relate to a kind of method of diffusion of PN junction, gas diffuser and crystal silicon solar cell sheet.
Background technology
In current crystal silicon solar batteries sheet production technology, the diffusion way of cell piece PN junction generally has three kinds:
1, after spraying phosphate aqueous solution, chain type spreads; 2, chain type diffusion after silk screen printing phosphorus slurry; 3, phosphorus oxychloride or the diffusion of boron bromide gaseous state.
Wherein the diffusion of phosphorus oxychloride gaseous state is diffusion way main at present.
Specifically as shown in Figure 1, silicon chip 1 is positioned on the plummer 3 of quartz ampoule 2, phosphorus oxychloride (POCL
3) to spread the process gas used be oxygen (O to liquid source
2), (the general flow of this nitrogen is comparatively large, at more than 5L/min, is commonly called as large nitrogen, is expressed as N for nitrogen
2), (generally adopt nitrogen, flow, at below 2L/min, is commonly called as little nitrogen, is expressed as N to carry gas
2-POCl
3), carry N by nitrogen
2-POCl
3and pass into a certain amount of oxygen simultaneously, make the silicon chip surface in furnace tubing generate phosphorous oxide layer, at high temperature, phosphorus is diffused into silicon from oxide layer, thus forms the thin heavily doped N-type region of one deck on P-type silicon sheet surface, i.e. PN junction.
Phosphorus spreads in silicon chip, the phosphorus distribution with a concentration gradient can be formed toward shallow direction from dark, the concentration gradient of this phosphorus atoms has better ohmic contact when can effectively allow solar battery sheet contact with silver electrode after sintering, and then improve the activity coefficient (Fill Factor) of solar cell, improve short circuit current (Imp) and open circuit voltage (Vmp) maximum.Therefore, good diffusion concentration gradient can improve the photoelectric conversion efficiency of solar battery sheet effectively.
But the situation of the PN junction phosphorus atom concentration gradient in the crystal silicon solar cell sheet that existing diffusion technique is formed is also not obvious, and then the ohmic contact of solar battery sheet and silver electrode is unsatisfactory.
Summary of the invention
Embodiments provide the method for diffusion of a kind of gas diffuser and PN junction, crystal silicon solar cell sheet, to improve the electrical property of solar battery sheet further, especially improve the ohmic contact of crystal silicon solar cell sheet and silver electrode, further strengthen the conversion efficiency of crystal silicon solar energy battery.
For achieving the above object, following technical scheme is embodiments provided:
A method of diffusion for PN junction, comprising:
Silicon chip to be inserted in diffusion furnace and to rise to the first preset temperature;
Pass into little nitrogen, oxygen and large nitrogen through diffusion furnace tube to diffusion furnace, simultaneously by the flow of the described little nitrogen of nonsteady flow gauge regulation and control, continue the first Preset Time;
Diffusion in-furnace temperature rises to the second preset temperature, and passes into the oxygen of default content and large nitrogen through diffusion furnace tube to diffusion furnace, continues the second Preset Time;
Diffusion process terminates, after diffusion furnace cooling, take out silicon chip.
Preferably, the process of the described flow by the described little nitrogen of nonsteady flow gauge regulation and control is:
Preset the initial value n of little nitrogen flow
iwith little nitrogen flow end value n
f;
Then the flow Q of described little nitrogen is:
wherein, described T is the first Preset Time.
Preferably, described nonsteady flow gauge regulates and controls little nitrogen range of flow is 0.0000 ~ 50.0000slm.
Preferably, described first preset temperature is 750 DEG C ~ 900 DEG C.
Preferably, described first Preset Time is 1min ~ 360min.
Preferably, described second preset temperature is 800 DEG C ~ 900 DEG C.
Preferably, described second Preset Time is 1min ~ 360min.
A kind of gas diffuser, comprising: successively by entrance hand-operated valve, inlet pneumatic valve and diffusion furnace that diffusion furnace tube connects, also comprise: be arranged on the nonsteady flow gauge between described inlet pneumatic valve and diffusion furnace.
Preferably, the modification scope of described nonsteady flow gauge is 0.0000 ~ 50.0000slm.
A kind of crystal silicon solar cell sheet, described crystal silicon solar cell sheet adopts the method described in above-mentioned any one to produce.
The method of diffusion of PN junction disclosed in this invention, by the flow of the described little nitrogen of nonsteady flow gauge regulation and control, thus the concentration of phosphorus oxychloride in change diffusion furnace, and then change the diffusing capacity that diffuse source enters silicon chip inside, thus form more obvious concentration gradient, the effective photoelectric conversion efficiency promoting solar battery sheet.
In addition, this method of diffusion can be applied in tubular type and board-like diffusion facilities, in the diffusion facilities of high production capacity, still has good diffusion concentration gradient.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of diffusion technology in existing crystal silicon solar energy battery manufacturing process;
The basic flow sheet of a kind of crystal silicon solar cell sheet PN junction method of diffusion that Fig. 2 provides for the embodiment of the present invention;
A kind of gas diffuser schematic diagram that Fig. 3 provides for the embodiment of the present invention.
Wherein, 10, entrance hand-operated valve, 20, inlet pneumatic valve, 30, diffusion furnace, 40, nonsteady flow gauge.
Embodiment
Just as described in the background section, the situation of the PN junction phosphorus atom concentration gradient in the crystal silicon solar cell sheet that existing diffusion technique is formed is also not obvious, and then the ohmic contact of solar battery sheet and silver electrode is unsatisfactory.Inventor studies discovery, and the mode that current gaseous state diffusion is all constant temperature constant current or alternating temperature constant current spreads, and in the process of diffusion, nitrogen brings identical phosphorus source into, at the same or different temperatures, carries out phosphorus diffusion.Because gas concentration is constant, the situation of the phosphorus atom concentration gradient therefore formed is also not obvious, and then the ohmic contact of solar battery sheet and silver electrode is unsatisfactory.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Embodiment one
Present embodiments provide a kind of method of diffusion of PN junction, comprise the steps:
Step S1, silicon chip be inserted in diffusion furnace and rise to the first preset temperature.
Described first preset temperature is 750 DEG C ~ 900 DEG C, is preferably 850 DEG C.
Step S2, pass into little nitrogen, oxygen and large nitrogen through diffusion furnace tube to diffusion furnace, simultaneously by the flow of the described little nitrogen of nonsteady flow gauge regulation and control, continue the first Preset Time.
The process of the described flow by the described little nitrogen of nonsteady flow gauge regulation and control is:
Preset initial value n
iwith end value n
f, obtain the scope of described little nitrogen changes in flow rate, control the flow Q of described little nitrogen;
Then the flow Q of described little nitrogen is:
wherein, described T is the first Preset Time.
Visible, along with the change of time, flow may be controlled to ascending, or descending.Only need set initial value (n
i) and end value (n
f), nonsteady flow gauge then can time (T) set by reaction, calculates the flow value of little nitrogen each second, reach the demand of change in concentration per second, make diffuseing to form of silicon chip gradually become diffusion concentration gradient that is large or that diminish.
It is 0.0000 ~ 50.0000slm that described nonsteady flow gauge regulates and controls little nitrogen range of flow.
In described step S2, diffusion in-furnace temperature remains on the first preset temperature, and described first Preset Time is 1min ~ 180min.
Step S3, diffusion in-furnace temperature rise to the second preset temperature, and pass into the oxygen of default content and large nitrogen through diffusion furnace tube to diffusion furnace, continue the second Preset Time.
Described second preset temperature is 800 DEG C ~ 900 DEG C, and be preferably 870 DEG C, described second Preset Time is 1min ~ 180min.
This step carries out knot in the process heated up, make impurity mild in the diffusion profile in interface like this, change the surface state of silicon chip, thus improve the minority carrier life time of silicon chip surface to a certain extent, also improve the useful life of crystal silicon solar energy battery.
Step S4, diffusion process terminate, after diffusion furnace cooling, take out silicon chip.
The method of diffusion of PN junction disclosed in this invention, by the flow of the described little nitrogen of nonsteady flow gauge regulation and control, thus the concentration of phosphorus oxychloride in change diffusion furnace, and then change the diffusing capacity that diffuse source enters silicon chip inside, thus form more obvious concentration gradient, strengthen cell piece surface and the ohmic contact of silver electrode, effectively promote the photoelectric conversion efficiency of solar battery sheet.
In addition, this method of diffusion can be applied in tubular type and board-like diffusion facilities, in the diffusion facilities of high production capacity, still has good diffusion concentration gradient.
Embodiment two
Present embodiment discloses a kind of gas diffuser, as shown in Figure 2, comprise: successively by entrance hand-operated valve 10, inlet pneumatic valve 20 and diffusion furnace 30 that diffusion furnace tube connects, also comprise: be arranged on the nonsteady flow gauge 40 between described inlet pneumatic valve 20 and diffusion furnace 30.
Described nonsteady flow gauge according to
principle, controls automatically, and wherein, Q is little nitrogen flow, n
ifor the little nitrogen flow initial value preset, n
ffor the little nitrogen flow end value preset, T is the first Preset Time.Visible, along with the change of time, flow may be controlled to ascending, or descending.Only need set initial value (n
i) and end value (n
f), nonsteady flow gauge then can time (T) set by reaction, calculates the flow value of little nitrogen each second, reach the demand of change in concentration per second, make diffuseing to form of silicon chip gradually become diffusion concentration gradient that is large or that diminish.
Preferably, the modification scope of described nonsteady flow gauge is 0.0000 ~ 50.0000slm.
Gas diffuser disclosed in the embodiment of the present invention also comprises the nonsteady flow gauge be arranged between described inlet pneumatic valve and diffusion furnace.Can in real time according to actual demand, the gas flow regulating and controlling to enter in diffusion furnace by nonsteady flow gauge, and then the concentration changing diffusion gas in diffusion furnace, thus obtain obvious diffusion effect.
Embodiment three
Present embodiments provide a kind of crystal silicon solar cell sheet, the PN junction of described crystal silicon solar cell sheet adopts the method for diffusion described in the first embodiment to produce.
The PN junction concentration gradient of the crystal silicon solar energy battery disclosed in the present embodiment is comparatively obvious, and photoelectric conversion efficiency is higher.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a method of diffusion for PN junction, is characterized in that, comprising:
Silicon chip to be inserted in diffusion furnace and to rise to the first preset temperature;
Pass into little nitrogen, oxygen and large nitrogen through diffusion furnace tube to diffusion furnace, simultaneously by the flow of the described little nitrogen of nonsteady flow gauge regulation and control, continue the first Preset Time;
Diffusion in-furnace temperature rises to the second preset temperature, and passes into the oxygen of default content and large nitrogen through diffusion furnace tube to diffusion furnace, continues the second Preset Time;
Diffusion process terminates, after diffusion furnace cooling, take out silicon chip.
2. the method for diffusion of PN junction according to claim 1, is characterized in that, the process of the described flow by the described little nitrogen of nonsteady flow gauge regulation and control is:
Preset little nitrogen flow initial value n
iwith little nitrogen flow end value n
f;
Then the flow Q of described little nitrogen is:
wherein, described T is the first Preset Time.
3. the method for diffusion of PN junction according to claim 1, it is characterized in that, it is 0.0000 ~ 50.0000slm that described nonsteady flow gauge regulates and controls little nitrogen range of flow.
4. the method for diffusion of PN junction according to claim 1, it is characterized in that, described first preset temperature is 750 DEG C ~ 900 DEG C.
5. the method for diffusion of PN junction according to claim 1, it is characterized in that, described first Preset Time is: 1min ~ 180min.
6. the method for diffusion of PN junction according to claim 1, it is characterized in that, described second preset temperature is 800 DEG C ~ 900 DEG C.
7. the method for diffusion of PN junction according to claim 1, it is characterized in that, described second Preset Time is: 1min ~ 180min.
8. a gas diffuser, comprising: successively by entrance hand-operated valve, inlet pneumatic valve and diffusion furnace that diffusion furnace tube connects, it is characterized in that, also comprise: be arranged on the nonsteady flow gauge between described inlet pneumatic valve and diffusion furnace.
9. gas diffuser according to claim 8, it is characterized in that, the modification scope of described nonsteady flow gauge is 0.0000 ~ 50.0000slm.
10. a crystal silicon solar cell sheet, is characterized in that, the PN junction of described crystal silicon solar cell sheet adopts the method described in any one of claim 1 ~ 7 to produce.
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| CN201510134303.7A CN104821272B (en) | 2015-03-26 | 2015-03-26 | Method of diffusion, gas diffuser and the crystal silicon solar cell sheet of PN junction |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109355709A (en) * | 2018-12-07 | 2019-02-19 | 吕洪良 | A kind of photovoltaic cell manufacture diffusion furnace inlet duct and its control method |
| CN111370302A (en) * | 2019-12-30 | 2020-07-03 | 横店集团东磁股份有限公司 | System and method for prolonging service life of source bottle pressure gauge of low-pressure diffusion furnace |
| CN111769034A (en) * | 2020-06-04 | 2020-10-13 | 东莞市天域半导体科技有限公司 | Preparation method of gradient PN junction material |
| CN113851556A (en) * | 2021-08-26 | 2021-12-28 | 东方日升(安徽)新能源有限公司 | Single crystal PERC cell and diffusion method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3666574A (en) * | 1968-09-06 | 1972-05-30 | Westinghouse Electric Corp | Phosphorus diffusion technique |
| CN201590408U (en) * | 2009-12-25 | 2010-09-22 | 深圳市捷佳伟创微电子设备有限公司 | Automatic pressure balancing structure of diffusion furnace |
| CN102254991A (en) * | 2011-06-30 | 2011-11-23 | 浚鑫科技股份有限公司 | Crystalline silicon solar cell and diffusion method thereof |
| CN102969403A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Diffusion technology for preparing Se battery by using etching process |
-
2015
- 2015-03-26 CN CN201510134303.7A patent/CN104821272B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3666574A (en) * | 1968-09-06 | 1972-05-30 | Westinghouse Electric Corp | Phosphorus diffusion technique |
| CN201590408U (en) * | 2009-12-25 | 2010-09-22 | 深圳市捷佳伟创微电子设备有限公司 | Automatic pressure balancing structure of diffusion furnace |
| CN102254991A (en) * | 2011-06-30 | 2011-11-23 | 浚鑫科技股份有限公司 | Crystalline silicon solar cell and diffusion method thereof |
| CN102969403A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Diffusion technology for preparing Se battery by using etching process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109355709A (en) * | 2018-12-07 | 2019-02-19 | 吕洪良 | A kind of photovoltaic cell manufacture diffusion furnace inlet duct and its control method |
| CN111370302A (en) * | 2019-12-30 | 2020-07-03 | 横店集团东磁股份有限公司 | System and method for prolonging service life of source bottle pressure gauge of low-pressure diffusion furnace |
| CN111769034A (en) * | 2020-06-04 | 2020-10-13 | 东莞市天域半导体科技有限公司 | Preparation method of gradient PN junction material |
| CN111769034B (en) * | 2020-06-04 | 2022-03-29 | 东莞市天域半导体科技有限公司 | Preparation method of gradient PN junction material |
| CN113851556A (en) * | 2021-08-26 | 2021-12-28 | 东方日升(安徽)新能源有限公司 | Single crystal PERC cell and diffusion method thereof |
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| Publication number | Publication date |
|---|---|
| CN104821272B (en) | 2018-04-03 |
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