CN104269459A - Decompression diffusion technology for manufacturing high-square-resistance battery pieces - Google Patents
Decompression diffusion technology for manufacturing high-square-resistance battery pieces Download PDFInfo
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- CN104269459A CN104269459A CN201410489842.8A CN201410489842A CN104269459A CN 104269459 A CN104269459 A CN 104269459A CN 201410489842 A CN201410489842 A CN 201410489842A CN 104269459 A CN104269459 A CN 104269459A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 111
- 230000006837 decompression Effects 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 18
- 239000011574 phosphorus Substances 0.000 claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 64
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000010453 quartz Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a decompression diffusion technology for manufacturing high-square-resistance battery pieces. The technology comprises a constant-temperature decompression process, a pre-oxidation process, a temperature rise process, a deep diffusion process, a phosphorus propulsion process, a post-oxidation treatment process and a temperature drop and pressure rise process. Compared with a constant-pressure diffusion technology, the variable of pressure in the diffusion process is introduced into the decompression diffusion technology, the pressure in a diffusion furnace tube is reduced, meanwhile temperature, time and airflow are adjusted so that the uniformity of the diffusion square resistance can be better, and the photovoltaic conversion efficiency of the manufactured battery pieces can be higher; besides, the yield in unit time of equipment can be increased, and the usage amount of diffusion phosphorus sources is reduced.
Description
Technical field
The present invention relates to semiconductor electronic technique particularly crystal silicon solar energy battery produce special process field, be particularly a kind of semiconductor crystal wafer particularly crystal silicon cell mix the diffusion technology of emitter processed.
Background technology
The main application of diffusion technology is under the high temperature conditions to semiconductor crystal wafer doping, thus changes and control the type of impurity in semiconductor, concentration and distribution, to set up different electrical characteristics regions.In solar energy crystal silicon battery manufacturing process, normal employing thermal diffusion process prepares PN junction, namely in a heated condition V race impurity element phosphorus is mixed P-type silicon or III boron impurities is mixed in N-type silicon, diffusion has material impact for the quality of PN junction for the conversion efficiency of solar cell, is one of deciding factor of solar cell properties.
Solar energy production line traditional at present mainly adopts normal pressure diffusion technology, namely, in diffusion process, diffusion furnace working chamber internal pressure keeps slight positive pressure state, low to the sealing requirements of diffusion furnace working chamber, even directly can adopt non-closed vessel furnace tubular construction, technology is comparatively simple.But, along with solar cell is to efficient, low cost future development, silicon chip surface doping content constantly reduces, the junction depth of PN junction is more and more shallow, square resistance improves constantly from 40 to 100 Ω/mouth, the control of normal pressure diffusion couple silicon chip uniform doping worse and worse, is difficult to prepare high-quality shallow surperficial PN junction.In addition, shared by doped source, dividing potential drop is smaller, and the absorptivity spreading phosphorus source in normal pressure diffusion is low, and consumption is large, brings very large negative effect to vent gas treatment and environmental protection, is difficult to meet the technical requirement that solar cell is efficient, low cost develops.
Summary of the invention
The object of the invention is to provide a kind of decompression diffusion technology preparing high sheet resistance battery sheet, can improve the output of unit interval equipment, reduces the consumption in diffusion phosphorus source, improves the uniformity of diffused sheet resistance and then improves cell piece photoelectric conversion efficiency.
For reaching above object, the present invention needs by the following technical solutions:
Prepare a decompression diffusion technology for high sheet resistance battery sheet, the silicon chip after making herbs into wool inserted in the quartz boat of diffusion furnace, then carry out following steps successively:
(1) constant temperature pressure reduction: temperature controlled between 800 DEG C-820 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is reduced to 5 thousand to 6 ten thousand handkerchiefs, and the time of constant temperature pressure reduction is 300s-900s;
(2) front oxidizing process: temperature is controlled between 800 DEG C-820 DEG C, pass into the large nitrogen of 1000scc-5000sccm, the dry oxygen of 300scc-1500sccm, remains between 5 thousand to 6 ten thousand handkerchiefs by diffusion furnace tube internal pressure, the time of front oxidizing process is 300s-900s;
(3) diffusion process: temperature is remained between 800 DEG C-820 DEG C, pass into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm and the little nitrogen of 500sccm-1500sccm, diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, diffusion time is 300s-600s;
(4) temperature-rise period: temperature is increased to 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is remained between 5 thousand to 6 ten thousand handkerchiefs, and the time of temperature-rise period is 200s-600s;
(5) dark diffusion process: temperature is remained between 830 DEG C-850 DEG C, pass into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm and the little nitrogen of 500sccm-1500sccm, diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, the time of dark diffusion process is 300s-600s;
(6) phosphorus progradation: temperature remained between 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is remained between 5 thousand to 6 ten thousand handkerchiefs, and the time of phosphorus progradation is 300s-600s;
(7) rear oxidation process: temperature remained between 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm, and diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, the rear oxidation time is 300s-1000s;
(8) cooling boost process, is reduced to 650-720 DEG C by temperature, passes into the large nitrogen of 1000-20000sccm, diffusion furnace tube internal pressure is increased to atmospheric pressure, and the time of cooling boost process is 900-1800s.
Carry out boat after having reacted and get sheet process, quartz boat is taken out from diffusion furnace, silicon chip is taken out from quartz boat.The sheet resistance value of described high sheet resistance battery sheet is preferably 100-150 Ω/mouth.
Preferred: step (1) described quartz boat is the narrow interval quartz boat that adjacent silicon chip slot is spaced apart 2 mm-3mm.
Further preferably: step (1) described diffusion furnace is high-temperature pressure-reduction diffusion furnace, and can be existing any decompression diffusion furnace, the present embodiment be preferably high-temperature pressure-reduction diffusion furnace disclosed in 202989354U.
Below the present invention be further explained and illustrate:
The present invention keeps a subatmospheric pressure environment in diffusion process, at this pressure phosphorus diffusion and related process process are carried out to silicon chip, adjust the parameters such as temperature, time, gas flow simultaneously and reach the rear silicon chip sheet resistance of raising diffusion evenly, realize the effect preparing high sheet resistance battery sheet.Phosphorus diffusion process can be constant temperature phosphorus diffusion process, also can be alternating temperature phosphorus diffusion process.Pressure in decompression diffusion process is lower than atmospheric pressure, and conventional diffusion process pressure is 0.5-6 ten thousand handkerchief.In diffusion process, the parameter such as temperature, time, gas flow needs to mate with diffusion pressure, the parameter such as temperature, time, gas flow that different diffusion pressure correspondences is different.Adjustment gas flow comprises the uninterrupted of the large nitrogen of adjustment, little nitrogen, dry oxygen, and the ratio of this several gas flow.Silicon chip can be carried in conventional quartz boat, also can be carried in the quartz boat at narrow interval.The adjacent silicon chip slot of described conventional quartz boat is spaced apart 4-6mm, and the adjacent silicon chip slot of described narrow interval quartz boat is spaced apart 2-3mm.
With existing normal pressure diffusion phase ratio, the present invention has following advantage:
1, decompression diffusion technology of the present invention introduces this variable of pressure in diffusion process, reduces diffusion furnace tube internal pressure, regulates temperature, time, throughput simultaneously, avoid turbulent flow to produce, thus improves the uniformity of diffused sheet resistance, and its inhomogeneities is lower than 2%.
2, decompression diffusion decompression diffusion technology of the present invention is due to the improve of diffused sheet resistance uniformity, and about the design of load quartz boat separation can reduce to the half of standard value, the effect brought like this is that production capacity significantly promotes when equipment volume is constant.
3, after adopting decompression diffusion technology, the utilization ratio in diffusion process diffusion phosphorus source improves, and the consumption spreading phosphorus source in technical process significantly reduces, and saves cost.
In a word, decompression diffusion technology of the present invention can improve the output of unit interval equipment, reduces the consumption in diffusion phosphorus source, improves the uniformity of diffused sheet resistance and then improves cell piece photoelectric conversion efficiency.
Accompanying drawing explanation
Fig. 1 represents five position distribution of embodiment middle probe tester test silicon wafer diffused sheet resistance.
Wherein: 1-center, 2-upper-right position, 3-bottom-right location, 4-lower left position, 5-top-left position
Embodiment
Below in conjunction with embodiment, the present invention is described further.
The invention provides a kind of decompression diffusion technology preparing high sheet resistance battery sheet, rely on decompression diffusion furnace, can be existing any decompression diffusion furnace, the present embodiment be preferably high-temperature pressure-reduction diffusion furnace disclosed in 202989354U, carries out phosphorus diffusion and allied processes at this pressure to silicon chip.
Typical case carries out diffusion technology under 20,000 handkerchief air pressure, and concrete steps are as follows:
(1) carry out set-up procedure, inserted by the silicon chip after making herbs into wool in the quartz boat of narrow interval, the adjacent silicon chip slot of quartz boat is spaced apart 2.38mm.
(2) carry out constant temperature pressure reduction, temperature controls at 810 DEG C, passes into the large nitrogen of 3000sccm, diffusion furnace tube internal pressure is reduced to 20,000 handkerchiefs, and the time is 600s.
(3) carry out front oxidizing process, temperature controls at 810 DEG C, passes into the large nitrogen of 2000sccm, and the dry oxygen of 1000sccm, remains on 20,000 handkerchiefs by diffusion furnace tube internal pressure, and the time is 400s.
(4) carry out diffusion process, temperature remains on 810 DEG C, passes into the large nitrogen of 1800sccm, and the dry oxygen of 600sccm and the little nitrogen of 600sccm, remain on 20,000 handkerchiefs by diffusion furnace tube internal pressure, and the time is 500s.
(5) carry out temperature-rise period, temperature is increased to 840 DEG C, pass into the large nitrogen of 3000sccm, diffusion furnace tube internal pressure is remained on 20,000 handkerchiefs, the time is 300s.
(6) carry out dark diffusion process, temperature remains on 840 DEG C, the large nitrogen of 1800sccm, and the dry oxygen of 600sccm and the little nitrogen of 600sccm, remain on 20,000 handkerchiefs by diffusion furnace tube internal pressure, and the time is 500s.
(7) carry out phosphorus progradation, temperature remains on 840 DEG C, passes into the large nitrogen of 3000sccm, diffusion furnace tube internal pressure is remained on 20,000 handkerchiefs, and the time is 500s.
(8) carry out rear oxidation process, temperature remains on 840 DEG C, passes into the large nitrogen of 2000sccm, and the dry oxygen of 1000sccm, remains on 20,000 handkerchiefs by diffusion furnace tube internal pressure, and the time is 600s.
(9) carry out cooling boost process, temperature is reduced to 680 DEG C, pass into the large nitrogen of 10000sccm, diffusion furnace tube internal pressure is increased to atmospheric pressure, the time is 1000s.
(10) carry out boat and get sheet process, quartz boat is taken out from diffusion furnace, silicon chip is taken out from quartz boat.
156 polysilicon chips after making herbs into wool are through this diffusion technology, and the method for testing of sheet resistance is as follows: often 6 silicon chips chosen by pipe, fire door (warm area one) two panels, (warm area two) two panels in stove, stove tail (warm area three) two panels; Every sheet selects five test points, and center, upper right, bottom right, lower-left, position, 5, upper left are as shown below.In sheet, the computational methods of inhomogeneities are: inhomogeneities=(maximum-minimum value)/(maximum+minimum value) in sheet.
Table 1: the diffused sheet resistance that under normal pressure diffusion furnace normal pressure, diffusion technology is done
The diffused sheet resistance that the diffusion technology that reduces pressure under table 2:2 ten thousand handkerchief pressure is done
Contrast table 1 and table 2, normal pressure dispersal center sheet resistance 96-99 Ω/, in sheet, inhomogeneities is 2.65%-4.83%.Decompression dispersal center sheet resistance 118-121 Ω/, in sheet, inhomogeneities is 0.83%-1.69%.Decompression diffusion phase diffused sheet resistance is done more by normal pressure diffusion energy, sheet resistance evenly.
Silicon chip after rear for decompression diffusion and normal pressure being spread makes cell piece, has contrasted unit for electrical property parameters.
Table 3: normal pressure diffusion makes the unit for electrical property parameters after cell piece with the silicon chip after spreading that reduces pressure
Single tube every batch production capacity decompression diffusion phase is to normal pressure diffusion lifting 1 times, and it is comparatively large that the silicon chip after decompression diffusion makes cell piece short circuit current, and transformation efficiency is normal pressure diffusion raising 0.15% comparatively.
Claims (4)
1. prepare a decompression diffusion technology for high sheet resistance battery sheet, it is characterized in that, the silicon chip after making herbs into wool is inserted in the quartz boat of diffusion furnace, then carry out following steps successively:
(1) constant temperature pressure reduction: temperature controlled between 800 DEG C-820 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is reduced to 5 thousand to 6 ten thousand handkerchiefs, and the time of constant temperature pressure reduction is 300s-900s;
(2) front oxidizing process: temperature is controlled between 800 DEG C-820 DEG C, pass into the large nitrogen of 1000scc-5000sccm, the dry oxygen of 300scc-1500sccm, remains between 5 thousand to 6 ten thousand handkerchiefs by diffusion furnace tube internal pressure, the time of front oxidizing process is 300s-900s;
(3) diffusion process: temperature is remained between 800 DEG C-820 DEG C, pass into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm and the little nitrogen of 500sccm-1500sccm, diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, diffusion time is 300s-600s;
(4) temperature-rise period: temperature is increased to 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is remained between 5 thousand to 6 ten thousand handkerchiefs, and the time of temperature-rise period is 200s-600s;
(5) dark diffusion process: temperature is remained between 830 DEG C-850 DEG C, pass into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm and the little nitrogen of 500sccm-1500sccm, diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, the time of dark diffusion process is 300s-600s;
(6) phosphorus progradation: temperature remained between 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, diffusion furnace tube internal pressure is remained between 5 thousand to 6 ten thousand handkerchiefs, and the time of phosphorus progradation is 300s-600s;
(7) rear oxidation process: temperature remained between 830 DEG C-850 DEG C, passes into the large nitrogen of 1000sccm-5000sccm, the dry oxygen of 300sccm-1500sccm, and diffusion furnace tube internal pressure remained between 5 thousand to 6 ten thousand handkerchiefs, the rear oxidation time is 300s-1000s;
(8) cooling boost process, is reduced to 650-720 DEG C by temperature, passes into the large nitrogen of 1000-20000sccm, diffusion furnace tube internal pressure is increased to atmospheric pressure, and the time of cooling boost process is 900-1800s.
2. prepare the decompression diffusion technology of high sheet resistance battery sheet according to claim 1, it is characterized in that, the sheet resistance value of described high sheet resistance battery sheet is 100-150 Ω/mouth.
3. according to claim 1 or 2, prepare the decompression diffusion technology of high sheet resistance battery sheet, it is characterized in that, step (1) described quartz boat is the narrow interval quartz boat that adjacent silicon chip slot is spaced apart 2mm-3mm.
4. according to claim 1 or 2, prepare the decompression diffusion technology of high sheet resistance battery sheet, it is characterized in that, step (1) described diffusion furnace is high-temperature pressure-reduction diffusion furnace.
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105070782A (en) * | 2015-06-19 | 2015-11-18 | 浙江宝利特新能源股份有限公司 | Low-pressure diffusion technique in solar cell silicon wafer production process |
| CN105161574A (en) * | 2015-09-21 | 2015-12-16 | 浙江正泰太阳能科技有限公司 | High-sheet resistance cell slice diffusion preparation method |
| CN105225932A (en) * | 2015-10-14 | 2016-01-06 | 江西展宇新能源股份有限公司 | A kind of method optimizing the diffusion technology time |
| CN105780127A (en) * | 2016-04-05 | 2016-07-20 | 盐城阿特斯协鑫阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN106784153A (en) * | 2016-12-30 | 2017-05-31 | 常州亿晶光电科技有限公司 | Solar battery sheet low pressure diffusion technique |
| CN107316831A (en) * | 2017-05-15 | 2017-11-03 | 湖南红太阳光电科技有限公司 | Quartz boat and solar battery diffusion technology |
| CN107331731A (en) * | 2017-07-04 | 2017-11-07 | 合肥市大卓电力有限责任公司 | A kind of solar cell crystal silicon chip phosphorus diffusion method |
| CN107394012A (en) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | A kind of silicon chip laser doping SE diffusion technique |
| CN107475775A (en) * | 2017-08-14 | 2017-12-15 | 通威太阳能（安徽）有限公司 | A kind of quartz boat contacts PN junction abnormal improvement technique in position with silicon chip |
| CN108470798A (en) * | 2018-05-04 | 2018-08-31 | 润峰电力有限公司 | A kind of oxygen-containing method of diffusion for crystal-silicon battery slice |
| CN108598216A (en) * | 2018-04-25 | 2018-09-28 | 通威太阳能（合肥）有限公司 | Temperature and pressure changing diffusion process for improving photoelectric conversion efficiency |
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| CN112864273A (en) * | 2020-12-29 | 2021-05-28 | 环晟光伏(江苏)有限公司 | Method for repairing PN junction after electroplating front surface slotting |
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