CN109427929A - A kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece - Google Patents
A kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece Download PDFInfo
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- CN109427929A CN109427929A CN201710786330.1A CN201710786330A CN109427929A CN 109427929 A CN109427929 A CN 109427929A CN 201710786330 A CN201710786330 A CN 201710786330A CN 109427929 A CN109427929 A CN 109427929A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
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- 238000002161 passivation Methods 0.000 claims abstract description 10
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- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 130
- 229910052757 nitrogen Inorganic materials 0.000 claims description 65
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 47
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- 239000004332 silver Substances 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 18
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
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- 239000012535 impurity Substances 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 10
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- 239000002002 slurry Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 210000004483 pasc Anatomy 0.000 description 3
- 239000000047 product Substances 0.000 description 3
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- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
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- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XFDJMIHUAHSGKG-UHFFFAOYSA-N chlorethoxyfos Chemical compound CCOP(=S)(OCC)OC(Cl)C(Cl)(Cl)Cl XFDJMIHUAHSGKG-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 239000008139 complexing agent Substances 0.000 description 1
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- 210000004209 hair Anatomy 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- OHZZTXYKLXZFSZ-UHFFFAOYSA-I manganese(3+) 5,10,15-tris(1-methylpyridin-1-ium-4-yl)-20-(1-methylpyridin-4-ylidene)porphyrin-22-ide pentachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mn+3].C1=CN(C)C=CC1=C1C(C=C2)=NC2=C(C=2C=C[N+](C)=CC=2)C([N-]2)=CC=C2C(C=2C=C[N+](C)=CC=2)=C(C=C2)N=C2C(C=2C=C[N+](C)=CC=2)=C2N=C1C=C2 OHZZTXYKLXZFSZ-UHFFFAOYSA-I 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation methods of PERC minute pattern printing monocrystalline solar cells piece, it is obtained to pass sequentially through making herbs into wool, diffusion, etching, annealing, back passivation, coated with antireflection film, backside laser fluting, printing, sintering, drop light decay step using monocrystalline silicon piece as substrate for it；The annealing steps are annealed using anaerobic, and back passivation step is to plate Al in silicon chip back side2O3And SiNX, coated with antireflection film step is to plate SiN in front side of silicon waferX, for positive electrode print steps using silk-screen printing, positive electrode printing screen plate, which is used, ties minute pattern printing screen plate without net.The LID of cell piece, can be reduced near 1%, improve the power of component finished product, high conversion efficiency, grade and electrical property are obviously improved by a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece provided by the invention.
Description
Technical field
The invention belongs to solar cell preparation technologies, and in particular to a kind of PERC minute pattern printing monocrystalline sun
The preparation method of energy cell piece.
Background technique
With being becoming tight the day of global energy, solar energy is with the exclusive advantage such as pollution-free, the market space is big by the world
The extensive attention of various countries.Solar battery is also known as " solar chip " or " photocell ", is a kind of utilization photovoltaic effect general
Solar energy is converted into the device of electric energy, mainly has crystal silicon battery, semi-conductor cell, without machine battery, organic battery etc., wherein
Crystal silicon solar batteries occupy market mainstream leading position.
The current mainstream technology of crystal silicon solar batteries is PERC (Passivated Emitter Rear Cell) ---
Emitter and passivating back battery technology, it improves conversion effect by adding a dielectric passivation layer on the rear side of battery
Rate.For PERC battery by carrying out passivating technique in cell backside, it is multiple to reduce the back side in the interior back reflection of silicon substrate for enhancing light
It closes, the potential gradient for spanning P-N junction is maximized, so that the flowing that electronics is more stable, reduces electron recombination, to make PERC
The efficiency of battery effectively improves.But the existing generally existing light of PERC battery extremely decaying (LID) problem, LID can lead to group
Part power attenuation is up to 10% or more.
Summary of the invention
In view of this, in view of the above shortcomings of the prior art, the present invention provides a kind of small figure of PERC that can drop light decay
The preparation method of shape printing monocrystalline solar cells piece.
In order to solve the above technical problems, the technical scheme is that printing the monocrystalline sun using a kind of PERC minute pattern
The preparation method of energy cell piece, it passes sequentially through A. making herbs into wool, B. diffusion, C. etching, D. annealing, E. using monocrystalline silicon piece as substrate
Light decay drops in back passivation, F. coated with antireflection film, G. backside laser fluting, H. back electrode, back electric field, positive electrode printing, I. sintering, J.
Step is made；The D. annealing steps are annealed using anaerobic, and E. back passivation step is to plate Al in silicon chip back side2O3And SiNX, F. plating
Antireflective coating step is to plate SiN in front side of silicon waferX, H. back electrode, back electric field, positive electrode print steps are using silk-screen printing, just
Electrode print halftone, which is used, ties minute pattern printing screen plate without net.
Further, J. drop light decay step specifically includes the following steps:
A. sintered solar battery sheet is put into light decay furnace；
B. it is heated for solar battery sheet；
C. illumination is carried out to solar battery sheet；
D. cool down to solar battery sheet；
E. it comes out of the stove.
Heating temperature is 278-282 DEG C and 293-295 DEG C in above-mentioned steps b.
Illumination is carried out to solar cell piece using simulated solar irradiation in above-mentioned steps c, the light intensity of illumination is 5.0-6.9SUN,
The time of illumination is 38-42 seconds.
The present invention is by above-mentioned drop light decay technique, so that cell piece light decay (LID) significantly reduces.Industry monocrystalline at present
2% or more, What is more reaches 3% or more substantially for light decay, and after above-mentioned light decay technique, the LID of cell piece can be reduced
To near 1%, the power of component finished product is improved.In addition cell piece after crossing light source stokehold efficiency is substantially unchanged or difference
Very little, and additional side effect is had no to production.
Further, in the B. diffusing step specifically includes the following steps:
A. the monocrystalline silicon piece after making herbs into wool is put into diffusion furnace, and is passed through big nitrogen into diffusion furnace；
B. diffusion furnace furnace chamber is warming up to the first temperature, and is continually fed into big nitrogen；
C. furnace chamber is maintained into the first temperature, and is passed through big nitrogen into furnace chamber and oxygen aoxidizes cell piece；
D. low temperature diffusion is carried out at the first temperature, this continues to be passed through big nitrogen, small nitrogen, oxygen into furnace chamber in the process；
E. diffusion furnace furnace chamber is warming up to second temperature while promotes phosphorus atoms, continue to be passed through big nitrogen；
F. furnace chamber is maintained into second temperature and carries out High temperature diffusion, continue to be passed through big nitrogen, small during this into furnace chamber
Nitrogen, oxygen；
G. diffusion furnace furnace chamber is warming up to third temperature while promotes phosphorus atoms, continue to be passed through big nitrogen
H. phosphorus atoms are persistently promoted at a temperature of third, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；
I. cool down and carry out aoxidizing while promoting phosphorus atoms, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；
J. it comes out of the stove；
Wherein, the first temperature < second temperature < third temperature.
Diffusion furnace initial temperature is arranged at 590-610 DEG C in above-mentioned steps a, first temperature is 770-790 DEG C,
The second temperature is 807-827 DEG C, and the third temperature is 840-860 DEG C.
In above-mentioned steps b, cavity temperature is risen to by the first temperature with the speed of 0.18-0.22 DEG C/s；In step e, with
Cavity temperature is risen to second temperature by the speed of 0.18-0.22 DEG C/s；In step g, with the speed of 0.18-0.22 DEG C/s by furnace chamber
Temperature rises to third temperature；Cooled down in step i with the speed of 0.18-0.22 DEG C/s.Heating and the too fast silicon wafer of cooling are frangible, and
Too fast cooling can be precipitated some extra impurity and capture electronics as trap states on surface.
The above-mentioned steps a flow that big nitrogen is passed through into step i is 1800-2200ml/min.Oxygen is logical in above-mentioned steps c
The flow entered is 80-120ml/min；The flow that oxygen is passed through in step d is 180-220ml/min；Oxygen is passed through in step f
Flow is 180-220ml/min；The flow that oxygen is passed through in step h is 180-220ml/min；The stream that oxygen is passed through in step i
Amount is 180-220ml/min；Step c, the purpose for leading to oxygen in d, f is different, it is therefore desirable to oxygen-supply quantity have difference.The mesh of step c
Be the sio2 layer to form one layer very thin, the diffusion after being allowed to is more uniform.Step d, the oxygen in f is as the reaction for generating phosphorus source
Gas, reaction equation are as follows:
4POCL3+3O2=2P2O5+6CL2
2P2O5+ 5Si=5SiO2+4P
The purpose that oxygen is passed through in step f is the SiO generated2With the excessive phosphorus reaction of surface heavy doping.
The flow that small nitrogen is passed through in above-mentioned steps d is 180-220ml/min；The flow that small nitrogen is passed through in step f is 80-
120ml/min.Step d to step h, the small nitrogen quantity being passed through are being gradually reduced until small nitrogen quantity is zero in h step, it is therefore an objective to be subtracted
Doping concentration of the small P atom on surface.
It is 180-220s that the time that oxygen is aoxidized is passed through in above-mentioned steps c；The time of low temperature diffusion is in step d
480-520s；The time of step f high temperature diffusion is 280-320s；The time that phosphorus atoms promote in step h is 180-220s.
Solar battery needs the PN junction of a large area to realize the conversion of luminous energy to electric energy, and diffusion furnace is to manufacture
The special equipment of solar battery PN junction.Tubular diffusion furnace mainly by the upper download part of quartz boat, exhaust air chamber, oven body part and
The most of composition in gas holder part etc. four.Diffusion generally uses phosphorus oxychloride liquid source as diffusion source.P-type wafer is placed on tubular type to expand
In the quartz container for dissipating furnace, phosphorus oxychloride is brought into quartz container using nitrogen under 850---900 celsius temperature, passes through three
Chlorethoxyfos and silicon wafer are reacted, and phosphorus atoms are obtained.By certain time, phosphorus atoms enter the superficial layer of silicon wafer from surrounding, and
And spread by the gap between silicon atom to silicon wafer internal penetration, the interface of N-type semiconductor and P-type semiconductor is formd,
Namely PN junction.The PN junction uniformity that this method is produced is good, and the inhomogeneities of square resistance is less than 10, minority carrier life time
10ms can be greater than.Manufacture PN junction is that solar cell produces most basic and most critical process.Because of the formation of exactly PN junction,
Electrons and holes are made not return to original place after flowing, material is thus formed electric currents, draw electric current with conducting wire, are exactly direct current
Electricity.
Diffusion is one of important procedure in crystal silicon solar cell sheet production process, and conventional diffusion technique is to crystalline silicon
The surface Uniform Doped of solar battery sheet, in order to reduce contact resistance, improve battery carrying load ability, solar battery sheet
Surface dopant concentration is higher, but surface impurity concentration is excessively high that diffusion region energy band contraction, distortion of lattice, defect is caused to increase, is " dead
Layer " is obvious, battery short wave response is poor；The high efficiency crystalline silicon solar cell of good short wave response in order to obtain, crystal silicon chip
Diffusion develop towards high square resistance direction.The method of diffusion of currently used crystal silicon solar cell sheet are as follows: put crystal silicon chip
It is intracavitary to be placed in horizontal diffusion furnace, is passed through mixed gas, mixed gas is mixed in proportion by nitrogen and phosphorus oxychloride, in normal pressure
Crystal silicon chip is diffused under state, the surface square resistance uniformity in crystal silicon chip obtained after diffusion processing is poor,
When carrying out the production of high surface square resistance, subsequent production process is easy to cause inefficient crystal silicon solar energy battery occur
Piece.
The present invention uses above-mentioned diffusion technique, spreads twice by low temperature, high temperature, and carry out heating, cooling to have twice
Oxygen promotes, and the uniformity of diffusion is improved while reducing impurities on surface of silicon chip concentration, improves solar battery to light
Absorptivity, to improve the transfer efficiency of solar battery.It is spread by low temperature, two rank of high temperature, and is spaced in the expansion of two ranks
Propulsion between dissipating reduces surface P concentration by P atom out of surface push-in PN junction as far as possible.And it is in the prior art diffusion and
Propulsion mode wants high compared to the surface concentration of P atom for the present invention.High concentration P atom can form dead layer, capture electricity on surface
The photoelectric conversion efficiency of son, cell piece reduces.And compared with the existing technology, the present invention guarantee impurity phosphorus atoms from silicon chip surface to
It inside silicon wafer while diffusion, avoids because silicon chip surface silicon dioxide layer is blocked up, and influences diffusion and the phosphorus silicon glass of impurity
The problem of glass removes, and method of diffusion provided by the invention is used, increase concentration gradient distribution and the current-carrying of diffusion impurity
The sub- service life improves the uniformity of diffusion while reducing impurities on surface of silicon chip concentration, exists to improve solar battery
Spectral responsivity in short-wave band improves solar battery to the absorptivity of light, and then improves the conversion of solar battery
Efficiency.In addition, the present invention also has the following advantages that, 1, PN junction more evenly；2, silicon wafer interval can be small in single tube furnace, and yield is more
Greatly；3, province source province gas.
Further, D. annealing steps of the present invention specifically includes the following steps:
A. the monocrystalline silicon piece cell piece after etching is put into annealing furnace, big nitrogen is passed through into annealing furnace boiler tube, be passed through big nitrogen
Flow be 1500ml/min-3500ml/min；
B. temperature in annealing furnace boiler tube is risen into temperature I in 290-310s, and extracts vacuum to pressure I, temperature I is 740-
760 DEG C, pressure I is 160-180MPa；
C. temperature I and pressure I, duration 890-910s are kept；
D. temperature in annealing furnace boiler tube is down to temperature II in 140-160s, temperature II is 640-660 DEG C；
E. annealing furnace intraductal pressure is risen into normal pressure in 90-110s；
F. it comes out of the stove.
The diffusion of prior art monocrystaline silicon solar cell is uneven, and surface concentration is higher.And monocrystalline silicon is passing through high temperature
Lattice distortion easy to form after diffusion.Therefore increasing annealing process, one side of effect of annealing after making herbs into wool, diffusion, etching
Phosphorus propulsion is played the role of in face, reduces the surface concentration of phosphorus, reduces " dead layer ", is mainly reflected in that Uoc advantage is bright in terms of electrical property
It is aobvious；On the other hand the lattice distorted in diffusion process can be enable to restore.
Existing annealing process is mainly using " step leads to oxygen method ", and oxygen is the major impurity in silicon wafer.Oxygen content
It is excessively high to will increase the defects of silicon wafer, it reduces transformation efficiency and increases photo attenuation.
The present invention uses anaerobic annealing process, carries out phosphorus atoms propulsion by annealing, and restore to distort in diffusion process
Lattice.There is no oxygen participation during annealing, avoids oxygen and silicon wafer from reacting and generate new impurity.In annealing with extensive
The lattice distorted in multiple diffusion process simultaneously, also continues the propulsion of phosphorus atoms, reduces the surface concentration of phosphorus atoms, reduces dead layer,
Improve electrical property.More important is do not have the participation of oxygen, oxygen and phosphorus and pasc reaction avoided to generate impurity to shadow in annealing process
Ring the performance of cell piece.
Further, positive electrode printing halftone used is to tie minute pattern printing screen plate without net in above-mentioned silk-screen printing,
It includes screen frame and connects the grenadine being fixed in the screen frame, and grenadine is woven by more warp and weft, the net
Each warp and weft in yarn are provided with Printing Zone and non-printing district on the grenadine, institute respectively parallel or perpendicular to screen frame
The figure for stating Printing Zone includes multiple spaced and parallel distributions for printing the secondary grid line hole of secondary grid line and spaced and parallel point multiple
The main grid string holes for printing main gate line of cloth and the peripheral frame line hole for printing peripheral frame line, the pair grid line hole
Between adjacent two wefts, each main grid string holes is connected to multiple secondary grid line holes, and main grid string holes and secondary grid line hole are mutual
It is vertically arranged, the minute pattern that multiple conductive silver pastes can not penetrate, the setting of peripheral frame line hole is provided in the main grid string holes
In the surrounding of main grid string holes and secondary grid line hole, the shape in peripheral frame line hole is waveform or zigzag.Wherein, minute pattern
Shape can be a variety of figures such as circle, rectangle, triangle, rectangular, diamond shape, polygon, the arrangement side in main grid string holes
Formula is the various arrangements mode such as parallel, interval.
Preferably, the material of the screen frame is aluminium alloy.
Preferably, the material of the warp and weft of the grenadine is stainless steel or nickel-base alloy.
Preferably, the line footpath of the warp of the grenadine or weft is 16mm.
Preferably, the mesh number of the grenadine is 325 mesh.
Preferably, the quantity in secondary grid line hole is 90~130 on the grenadine Printing Zone.
Preferably, the width in any pair grid line hole is 20~35 μm on the grenadine Printing Zone.
Preferably, the spacing in adjacent pair grid line hole is 1.0~2.0mm on the grenadine Printing Zone.
Preferably, the width in any main gate line hole is 0.4~1.5mm on the grenadine Printing Zone.
Preferably, in the main grid string holes gross area of minute pattern and main grid string holes area ratio 25~45% it
Between.
Positive electrode of the present invention printing is thrown the net technology using zero degree, and net knot can be effectively avoided at secondary grid, solves existing skill
Screen cloth upper warp and woof line is formed by net knot and seriously affects printing slurry and pass through in art, cause poor printing line style uniformity, easy network blocking,
Bargraphs, which lacks, to be formed empty print and disconnected grid, grid line width and cannot do the problems such as too narrow；Positive electrode frame line style uses wave simultaneously
Wave or sawtooth pattern, avoid blocking for latitude and longitude, solve the problems, such as that frame line is blocked due to latitude and longitude is easy empty print；Main gate line
Multiple minute patterns are added on hole, i.e., apply the emulsion of certain figure at main gate line, and emulsion plays support in moulding process
Effect, can increase ink saturate amount, and due to there is the local area of emulsion very small, the slurry of surrounding can fill up the sky at this after collapsing
It lacks, to ensure that the unimpeded of electrode main grid line.The obstruction of knot and blocking for latitude and longitude are not netted, strike through can increase by 20%
More than, keep printing more smooth, printing it is linear more smooth, grid phenomenon is resolved in reduction and main grid void print, frame void print phenomenon
Generation, make secondary grid graph thinning, halftone pair grid line is wide most can carefully to accomplish 20 μm, and depth-width ratio is big, reduce covering of the grid line to light
Area improves the grade and electrical property of solar battery sheet.
To sum up, the preparation method of a kind of PERC minute pattern printing monocrystalline solar cells piece provided by the invention, can incite somebody to action
The LID of cell piece can be reduced near 1%, improve the power of component finished product, high conversion efficiency, and grade and electrical property have bright
Aobvious promotion.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the present invention without net knot minute pattern printing screen plate；
The enlarged diagram that Fig. 2 is A in Fig. 1 (frame line is waveform)；
The enlarged diagram that Fig. 3 is A in Fig. 1 (frame line is zigzag)；
Fig. 4 is the enlarged diagram of B in Fig. 1；
Fig. 5 is the relational graph of LID and conveyer belt progress speed after 25KWH illumination；
Fig. 6 is the relational graph after 25KWH illumination, between LID and temperature；
Fig. 7 is the datagram for testing I；
Fig. 8 is the datagram for testing II.
Marginal data:
1- screen frame, 2- grenadine, the Printing Zone 3-, 4- non-printing district, 5- minute pattern；21- warp, 22- weft；31- pair grid
String holes, 32- main grid string holes, 33- frame string holes.
Specific embodiment
It is with reference to the accompanying drawing and preferred real in order to make those skilled in the art more fully understand technical solution of the present invention
Applying mode, the present invention is described in further detail.It should be pointed out that following preferred embodiments are not construed as to this hair
Bright limitation, protection scope of the present invention should be defined by the scope defined by the claims..For the common of the art
For technical staff, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these improve and
Retouching also should be regarded as protection scope of the present invention.
The present invention provides a kind of preparation methods of PERC minute pattern printing monocrystalline solar cells piece, it is with monocrystalline silicon
Piece is substrate, comprising the following steps:
A. the preparation of making herbs into wool-monocrystalline silicon suede is the anisotropic etch using silicon, is formed in silicon face every square centimeter
Millions of four sides side's cones namely pyramid structure.Multiple reflections and refraction due to incident light on surface, increase light
It absorbs, improves the short circuit current and transfer efficiency of battery.The anisotropic etchant of silicon usually uses the alkaline solution of heat, can use
Alkali have sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc..The hydroxide for the use of cheap concentration being about mostly 1%
Sodium weak solution prepares flannelette silicon, and corrosion temperature is 70-85 DEG C.In order to obtain uniform flannelette, it should also consider and add in the solution
Add alcohols such as ethyl alcohol and isopropanol etc. as complexing agent, to accelerate the corrosion of silicon.Before preparing flannelette, silicon wafer must first carry out preliminary table
Face corrosion, removal mechanical damage layer carry out general chemical cleaning after corroding flannelette.Making herbs into wool corrosion depth is controlled in 2.8-
3.5um.It should not all be deposited long in water by the silicon wafer that surface prepares, it, should diffusion as early as possible with soil resistant.
B. spread-specifically includes the following steps:
(1) cell piece is put into diffusion furnace, and is passed through big nitrogen into diffusion furnace；Before being put into cell piece, by diffusion furnace
Initial temperature is arranged at 590-610 DEG C.Cell piece is preferably placed back to back in quartz boat, and quartz boat is placed in diffusion furnace.
The intake of big nitrogen is 1800-2200ml/min, its object is to adjust the pressure of reaction, so that in reaction process, diffusion furnace
Pressure in furnace chamber is maintained at 100-140mbar.
(2) diffusion furnace furnace chamber is warming up to the first temperature, and is continually fed into big nitrogen；In the step, with 0.18-0.22 DEG C/s
Speed cavity temperature is risen to 770-790 DEG C, continue big nitrogen is passed through into furnace chamber with 1800-2200ml/min so that furnace chamber
Interior pressure is maintained at 100-140mbar.
(3) furnace chamber is maintained into the first temperature, and is passed through big nitrogen into furnace chamber and oxygen aoxidizes cell piece；The step
In rapid, being passed through the time that oxygen is aoxidized is 180-220s；The flow that oxygen is passed through is 80-120ml/min；What big nitrogen was passed through
Flow is 1800-2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.The purpose of the step is in cell piece
Surface forms uniform oxide layer, makes subsequent diffusion more uniform.
(4) low temperature diffusion is carried out at the first temperature, this continues to be passed through big nitrogen, small nitrogen, oxygen into furnace chamber in the process；Electricity
Pond piece surface forms one layer of phosphorous SiO2Layer.In the step, carry out low temperature diffusion at 770-790 DEG C, low temperature diffusion when
Between be 480-520s；The flow that small nitrogen is passed through is 180-220ml/min；The flow that oxygen is passed through is 180-220ml/min；Big nitrogen
The flow being passed through is 1800-2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.POCl3It is greater than at high temperature
It is decomposed at 600 DEG C and generates phosphorus pentachloride (PCl5) and phosphorus pentoxide (P2O5)；The P of generation2O5Under diffusion temperature with pasc reaction,
Generate silica (SiO2) and phosphorus atoms.POCl3When thermal decomposition, if not external oxygen (O2) to participate in its decomposition be not fill
Point, the PCl of generation5It is not easily decomposed, and has corrosiveness to silicon, destroy the surface state of silicon wafer.But there is external O2
In the presence of, PCl5P can be further decomposed into2O5And release chlorine (Cl2).The P of generation2O5Further acted on silicon,
Generate SiO2And phosphorus atoms, it can be seen that, in phosphorus diffusion, in order to promote POCl3Adequately decompose and avoid PCl5To silicon wafer table
The corrosiveness in face, it is necessary to the oxygen of certain flow is passed through while logical nitrogen.In the presence of having oxygen, POCl3It decomposes and generates
P2O5It is deposited on silicon chip surface, P2O5SiO is generated with pasc reaction2And phosphorus atoms, and one layer of phosphorus-silicon glass is formed in silicon chip surface
Glass, then phosphorus atoms are diffused into silicon again.
(5) diffusion furnace furnace chamber is warming up to second temperature while promotes phosphorus atoms, continue to be passed through big nitrogen；It is pushed away in heating
Into.In the step, cavity temperature is risen to 807-827 DEG C with the speed of 0.18-0.22 DEG C/s；The flow that big nitrogen is passed through is
1800-2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.
(6) furnace chamber is maintained into second temperature and carries out High temperature diffusion, continue during this to be passed through into furnace chamber, small nitrogen,
Oxygen；In the step, High temperature diffusion is carried out at 807-827 DEG C, the time of high/low temperature diffusion is 280-320s s；Small nitrogen is passed through
Flow be 80-120ml/min；The flow that oxygen is passed through is 180-220ml/min；The flow that big nitrogen is passed through is 1800-
2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.
(7) diffusion furnace furnace chamber is warming up to third temperature while promotes phosphorus atoms, continue to be passed through big nitrogen；In the step, with
Cavity temperature is risen to 840-860 DEG C by the speed of 0.18-0.22 DEG C/s.The flow that big nitrogen is passed through is 1800-2200ml/min.Furnace
Intracavitary pressure is maintained at 100-140mbar.
(8) phosphorus atoms are persistently promoted at a temperature of third, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；The step
In rapid, phosphorus atoms 180-220s is persistently promoted at 840-860 DEG C.The flow that oxygen is passed through is 180-220ml/min；Big nitrogen is logical
The flow entered is 1800-2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.It can make under high temperature surface is highly concentrated
The P atom of degree is spread into matrix, reduces surface dead layer.The purpose for being passed through oxygen is the SiO generated2It was gone with surface heavy doping
The P of amount reacts, and generates the subsequent PSG (phosphorosilicate glass) that can be washed with acid.
(9) cool down and carry out aoxidizing while promoting phosphorus atoms, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；With
The speed of 0.18-0.22 DEG C/s is down to room temperature, and the flow that oxygen is passed through is 180-220ml/min；The flow that big nitrogen is passed through is
1800-2200ml/min.Pressure in furnace chamber is maintained at 100-140mbar.
(10) it comes out of the stove.In whole process, the first temperature < second temperature < third temperature.
Present invention employs low temperature diffusion, High temperature diffusion, heatings to promote, high temperature persistently promotes, finally cooling aoxidizes simultaneously
The mode of propulsion.When low temperature diffusion, phosphorus atoms can be deposited in silicon chip surface, and grain boundary decision plays a major role at this time, foreign atom
It can be escaped by crystal boundary and dislocation " pipeline ", but the effect of gettering is unobvious；Second step High temperature diffusion, can be quickly and effectively molten
Solution precipitated metal and composite metal make foreign atom become the interstitial atom that can be fast moved from different forms, but this is high
Under temperature, multicrystalline silicon substrate and weight phosphorus diffusion region in segregation coefficient difference it is little, so just needing further high temperature again
It promotes, finally cooling increases the driving force (metal differs greatly in the segregation coefficient of different zones at this time) of gettering, is finally reached
Improve the purpose of raw material.
It is to be diffused to be diffused rear cell piece sheet resistance data with conventional scheme according to the above method below.
C. etching-is due in diffusion process, though using diffusion back-to-back, all surface of silicon wafer include edge all
Phosphorus will inevitably be spread.Light induced electron collected by the front of PN junction can have the region of phosphorus to flow to along edge-diffusion
The back side of PN junction, and cause short circuit.Therefore, it is necessary to be performed etching to the doped silicon on solar battery periphery, to remove battery side
The PN junction of edge.It generallys use plasma etching technology and completes this technique.Plasma etching is reaction gas in a low voltage state
The parent molecule of CF4 generates under the excitation of radio-frequency power and ionizes and form plasma.Plasma is the electronics by charging
It is formed with ion, the gas in reaction cavity is under the shock of electronics, other than being transformed into ion, moreover it is possible to absorb energy and be formed
A large amount of active group.Active reactive group due to diffusion or under electric field action reach the surface SiO2, there with carved
Corrosion material surface chemically reacts, and forms volatile reaction product and be detached from the material surface that is etched, by vacuum system
Extract cavity out.
D. the anaerobic annealing process that annealing-present invention uses includes the following steps.
(1) cell piece is put into annealing furnace；It will fill in cell piece push-in annealing furnace boiler tube, and be passed through greatly in boiler tube
Nitrogen, the flow being passed through is 1500ml/min-3500ml/min, while boiler tube is preheated to 640-660 DEG C.It is passed through the mesh of big nitrogen
Be in order to which the air in boiler tube is supplanted, as far as possible reduction boiler tube in oxygen content.
In process of production in order to guarantee yield, stove can generally be always held at 600 DEG C of temperature in non-annealing state.
It can be reduced the time required for increasing temperature (as being raised to 740 DEG C) in this way.
Big nitrogen flow can be a range 1500ml/min-3500ml/min, and the purpose of big nitrogen flow is limited in step A
It is that the intracorporal air of chamber is discharged as early as possible.The too small air velocity of discharge of flow is slow, too big to be not necessarily to, and causes to waste.
(2) temperature in annealing furnace boiler tube is risen into temperature I, and extracts vacuum to pressure I；Boiler tube is pinched in 290-310s
Temperature rise to 740-760 DEG C, and vacuum is extracted, so that the pressure in boiler tube is in 160-180mPA.Vacuum is conducive to boiler tube
Interior even heat conduction, and further decrease the content of oxygen.In step B lead to nitrogen and vacuumize be it is simultaneous,
The foreign gas being precipitated in the too small annealing process of big nitrogen flow cannot be discharged in time, will cause very much waste greatly.
(3) temperature I and pressure I is kept；Continue 890- under 740-760 DEG C of temperature condition and 160-180mPA pressure
910s.Phosphorus atoms are diffused at high temperature, and temperature is at 850 DEG C or so.High temperature diffusion can quickly and effectively dissolve metal
Precipitating and composite metal make foreign atom become the interstitial atom that can be fast moved from different forms, but under this high temperature,
Multicrystalline silicon substrate and weight phosphorus diffusion region in segregation coefficient difference it is little, so just need by cooling annealing increase inhale
Miscellaneous driving force (metal differs greatly in the segregation coefficient of different zones at this time) is finally reached the purpose for improving raw material.Separately
Outer cooling annealing can enable the lattice distorted in diffusion process restore.Since air has been discharged in front of the step of and has extracted
Vacuum avoids oxygen atom from entering inside cell piece and generates complex centre to reduce battery piece performance.
(4) temperature in annealing furnace boiler tube is down to temperature II；The temperature in boiler tube is down in 140-160s
640-660℃.It is that air pressure is raised to normal pressure that big nitrogen is filled in step D.
(5) annealing furnace intraductal pressure is risen into normal pressure；In 90-110s from by the pressure in boiler tube from 160-180mPA
Normal pressure is risen to, normal pressure is about 1031mpa.
(6) it comes out of the stove.d
Lower section table is the comparison of annealing front and back cell piece electric property.
As can be seen from the above table, after above-mentioned technique is annealed, the various aspects electric property of cell piece is better than moved back
Before fire.
D. back passivation-uses ALD equipment depositing Al2O3, atomic layer deposition ALD (Atomic layer deposition)
Be it is a kind of can the method for being plated in substrate surface by substance with monatomic form membrane in layer.Atomic layer deposition and common
Chemical deposition has similarity.But in atomic layer deposition process, the chemical reaction of new one layer of atomic film is directly previous therewith
Layer is associated, and this mode makes each reaction only deposit one layer of atom.ALD Al2O3With negative bound charge, it is particularly suitable for
Passivation in p-type silicon chip surface.
E. the reflectivity of coated with antireflection film-silicon face after making herbs into wool is 20% or so, anti-in order to be further reduced surface
It penetrates, improves the transfer efficiency of battery, need to deposit one layer of silicon nitride anti-reflecting film.Now set in the industrial production frequently with PECVD
Prepare standby antireflective coating.PECVD, that is, plasma enhanced chemical vapor deposition.Its technical principle is to utilize low temperature plasma
Make energy source, sample is placed under low pressure on the cathode of glow discharge, and so that sample is warming up to scheduled temperature using glow discharge,
Then pass to suitable reaction gas SiH4And NH3, gas is through series of chemical and plasma reaction, in sample surfaces
Form solid film, that is, silicon nitride film.Under normal circumstances, heavy using the method for this plasma enhanced chemical vapor deposition
Long-pending film thickness is in 70nm-90nm or so.The film of thickness has optical functionality in this way.Using film interference principle,
The reflection of light can be made to be greatly reduced, the short circuit current of battery and output are just increased considerably, and efficiency also has comparable raising.
F. backside laser fluting-Al2O3Back passivated battery and conventional batteries are the difference is that it is plated in silicon chip surface
One layer of Al2O3Film carries out back surface passivation, Al2O3Layer of sin film is plated again outside film, then using laser in silicon wafer
It slots at the back side.Due to Al2O3Film and SiN film are that insulating layer can not be conductive, and the effect of laser is mainly exactly by the back side
Al2O3Film is scratched with SiN film exposes silicon substrate, enables silicon substrate and aluminium after completing to carry on the back electric field printing-sintering
Back surface field forms good Ohmic contact.
G. back electrode, back electric field, positive electrode printing-specifically includes the following steps:
(1) printed back electrode: using silver-colored aluminium paste, print thickness is 20 μm, and width is the metal strip of 4mm；
(2) it prints Al-BSF: using aluminium paste, print thickness is 20 μm, should prevent the overbending of silicon wafer, and be sintered
Aluminium ball is formed in the process and cell backside forms the protrusion of aluminium；
(3) printing screen plate silk-screen printing, referring to Fig. 1 to Fig. 4, nothing provided by the invention print positive electrode: are tied using without net
Net knot minute pattern screen printing screens include screen frame 1 and connect the grenadine 2 being fixed in the screen frame 1, and grenadine 2 is by more
Warp 21 and weft 23 weave, each warp 21 in the grenadine 2 and weft 22 respectively parallel or perpendicular to screen frame 1,
Printing Zone 3 and non-printing district 4 are provided on the grenadine 2, the figure of the Printing Zone 3 includes the use of multiple spaced and parallel distributions
The main grid string holes 32 and use for printing main gate line in the secondary grid line hole 31 and multiple spaced and parallel distributions for printing secondary grid line
In the peripheral frame line hole 33 for printing peripheral frame line, the pair grid line hole 31 is between adjacent two wefts 22, Mei Gezhu
Grid line hole 32 is connected to multiple secondary grid line holes 31, and main grid string holes 32 is arranged in a mutually vertical manner with secondary grid line hole 31, each master
The minute pattern 5 that multiple conductive silver pastes can not penetrate is provided on grid line hole 32, peripheral frame line hole 33 is arranged in main grid string holes
32 and secondary grid line hole 31 surrounding, the shape in peripheral frame line hole 33 is waveform or zigzag.
Wherein, the shape of minute pattern 5 can be a variety of figures such as circle, rectangle, triangle, rectangular, diamond shape, polygon
Shape, the arrangement mode in main grid string holes are the various arrangements mode such as parallel, interval.Fig. 4 show minute pattern be rectangle,
A kind of situation being arranged parallel to each other.
Preferably, the material of the screen frame 1 is aluminium alloy.
Preferably, the material of the warp 21 of the grenadine and weft 22 is stainless steel or nickel-base alloy.
Preferably, the line footpath of the warp 21 of the grenadine or weft 22 is 16mm.
Preferably, the mesh number of the grenadine 2 is 325 mesh.
Preferably, the quantity in secondary grid line hole 31 is 90~130 on the grenadine Printing Zone.
Preferably, the width in any pair grid line hole 31 is 20~35 μm on the grenadine Printing Zone.
Preferably, the spacing in adjacent pair grid line hole 31 is 1.0~2.0mm on the grenadine Printing Zone.
Preferably, the width in any main gate line hole 32 is 0.4~1.5mm on the grenadine Printing Zone.
Preferably, in the main grid string holes gross area of minute pattern and main grid string holes area ratio (i.e. main grid string holes
Hollow out rate) between 25~45%.
The production method of printing screen plate of the present invention is identical compared with technology, is all to stretch screen cloth by certain pulling force
Afterwards, be adhered on screen frame, the latitude and longitude on screen cloth are parallel or vertical with screen frame respectively, then using pretreatment removal grease,
Photoresists coating is carried out after impurity, is solidified through printing down, the pattern that flushing of developing is formed on Printing Zone of the present invention, then again in main grid
The latex of certain figure is coated at string holes.Emulsion plays the role of support in moulding process, can increase ink saturate amount, due to there is cream
The local area of agent is very small, and the slurry of surrounding can fill up the vacancy at this after collapsing, to ensure that electrode main grid line
It is unimpeded.
H. the slurry be sintered-being printed on substrate forms thick film conductor by sintering process, and sintering parameter and equipment can join
It is selected according to the prior art.
I. drop light decay step-the following steps are included:
(1) sintered solar battery sheet is put into light decay furnace；Solar battery sheet is transported to by light using conveyer belt
It declines in furnace.The travel speed of conveyer belt is 6000-6500mm/min.
(2) it is heated for solar battery sheet；Heating temperature is 278-282 DEG C and 293-295 DEG C.
(3) illumination is carried out to solar battery sheet；Illumination, the light of illumination are carried out to solar cell piece using simulated solar irradiation
It is by force 5.0-6.9SUN, the time of illumination is 38-42 seconds.
(4) cool down to solar battery sheet.
(5) it comes out of the stove.
Light decay furnace is aerated, including air-supply and exhausting.The rotation speed of fan of air-supply is 2100-2500 revs/min.The wind of exhausting
Machine revolving speed is 1300-1700 revs/min.
Industry generally believes light decay (LID) < 2% for qualification.
Because boron-doping reason can form boron oxygen complex in body, the complex of this boron and oxygen can make solar battery sheet
Minority carrier life time decline, so as to cause the reduction of cell piece efficiency.If using light decay technique, allow cell piece after printing-sintering by
Light source furnace carries out lighting process to cell piece at a certain temperature, can enhance the hydrogen passivation effect of battery under anneal environment,
Reducing boron oxygen complex reduces the influence of minority carrier life time, to reduce the light decay of solar battery sheet and can guarantee cell piece
In light source stokehold, behind efficiency is undifferentiated.
Light decay furnace is added the process runs well after silk-screen printing section sintering furnace by the present invention.Bonding apparatus hardware and
Factory service facility, adjusts light decay furnace operating parameter, and the light decay (LID) after realizing light source significantly reduces.Industry list at present
2% or more, What is more reaches 3% or more substantially for brilliant light decay, and after light source furnace acts on light decay technique, our company battery
The LID of piece can be reduced near 1%, improve the power of component finished product.In addition efficiency base of the cell piece after crossing light decay stokehold
This unchanged or difference very little, and additional side effect is had no to production.
We verify promotion of the technique provided by the present invention to LID by testing below.
Fig. 5-Fig. 6 is after 25KWH illumination, and LID and conveyer belt carry out between speed (hereinafter referred to as belt speed), temperature
Relationship.Experiment is twice and to be averaged.
By Fig. 5 it will be seen that LID is directly proportional to belt speed, and in 6000-6500mm/s, LID value is lower simultaneously
And rising trend is also relatively slow.
By Fig. 6 it will be seen that LID waviness is distributed, and in 278-282 DEG C and 293-295 DEG C of section
Interior lower, minimum appears in 280 DEG C.
Fig. 7 is relational graph when testing I intensity of illumination, LID and belt speed 6000/6500.Wherein BL is control group, is selected
Be light decay machine that maximum intensity of illumination is 10SUN, Y-axis LID, X-axis is maximum intensity of illumination percentage.From Fig. 7 we
It can be seen that the decaying of BL efficiency is 2% or so；It crosses after LID furnace to decay and be substantially reduced about 1% or so.After belt speed 6000:LID
Efficiency decays lower when light source is 54,63,69.Belt speed 6500:LID behind efficiency light source be 51,57,63,69 when decaying compared with
It is low.
Fig. 8 is the result figure for testing II.Wherein BL is not by the control group of reduction light decay technique.Y-axis is LID, and X-axis is
Maximum intensity of illumination (10SUN) percentage.The decaying of LID 8KWH behind efficiency is minimum about 1.29% (and after LID furnace when light source 66
Efficiency is undamped), we can determine whether go out preferable parameter: 66/ belt speed of the intensity of light source, 6500/ temperature 280.
Below we pass through again experimental verification it is provided by the invention without net knot minute pattern printing screen plate to grid line width
It influences.
156mm × 156mm monocrystalline silicon piece is chosen in experiment, and with a thickness of 200 μm, resistivity is 1-3 Ω with batch silicon wafer 600
Piece, " making herbs into wool-diffusion-etching-annealing-back passivation-coated with antireflection film-backside laser is opened according to provided by the invention
Slot-back electrode, back electric field, positive electrode printing-sintering-drop light decay " technique be made solar battery sheet, unlike this 600
Piece silicon wafer is randomly divided into three groups each 200, and same track is selected to be printed, then through same sintering furnace and tester into
Row sintering test, specific data see the table below shown.Wherein the printing screen plate of test 1 is the present invention without net knot minute pattern printing net
Version, the hollow out rate of main grid string holes are 25%；The printing screen plate of test 2 is the present invention without net knot minute pattern printing screen plate, main grid
The hollow out rate of string holes is 45%；The printing screen plate of test 3 is conventional 22.5 ° of oblique halftones.
The height of 1. cell piece pair grid line of table is wide
| Line width (μm) | Line height (μm) | Depth-width ratio | |
| Test 1 | 46.66 | 18.53 | 39.7% |
| Test 2 | 47.77 | 18.69 | 39.1% |
| Test 3 | 50.84 | 16.36 | 32.2% |
2. electrical performance of cell data of table
As can be seen from the above table, the secondary more conventional halftone of grid line line style printed out using the present invention without net knot printing screen plate
It compares, width is narrower, and thickness is bigger, and depth-width ratio has been significantly improved, so that the short circuit current of cell piece be made to be mentioned
It rises, thus the more conventional halftone of transfer efficiency also increases, using the electricity for the solar battery sheet that screen painting of the present invention obtains
It is more superior to learn performance.
Claims (10)
1. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece, it is characterised in that: it is with monocrystalline silicon piece
For substrate, A. making herbs into wool is passed sequentially through, B. diffusion, C. etching, D. annealing, E., which is carried on the back, to be passivated, and F. coated with antireflection film, G. backside laser is opened
Slot, H. back electrode, back electric field, positive electrode printing, I. sintering, J. drop light decay step and are made；The D. annealing steps use anaerobic
Annealing, E. back passivation step is to plate Al in silicon chip back side2O3And SiNX, F. coated with antireflection film step is to plate SiN in front side of silicon waferX,
H. back electrode, back electric field, positive electrode print steps use silk-screen printing, and positive electrode printing screen plate is used without net knot minute pattern print
Brush halftone.
2. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 1, special
Sign is: J. drop light decay step again the following steps are included:
A. sintered solar battery sheet is put into light decay furnace；
B. it is heated for solar battery sheet；
C. illumination is carried out to solar battery sheet；
D. cool down to solar battery sheet；
E. it comes out of the stove.
3. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 2, special
Sign is: heating temperature is 278-282 DEG C and 293-295 DEG C in the step b.
4. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 2, special
Sign is: illumination is carried out to solar cell piece using simulated solar irradiation in the step c, the light intensity of illumination is 5.0-6.9SUN,
The time of illumination is 38-42 seconds.
5. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 1, special
Sign is: in the B. diffusing step again the following steps are included:
A. the monocrystalline silicon piece after making herbs into wool is put into diffusion furnace, and is passed through big nitrogen into diffusion furnace；
B. diffusion furnace furnace chamber is warming up to the first temperature, and is continually fed into big nitrogen；
C. furnace chamber is maintained into the first temperature, and is passed through big nitrogen into furnace chamber and oxygen aoxidizes cell piece；
D. low temperature diffusion is carried out at the first temperature, this continues to be passed through big nitrogen, small nitrogen, oxygen into furnace chamber in the process；
E. diffusion furnace furnace chamber is warming up to second temperature while promotes phosphorus atoms, continue to be passed through big nitrogen；
F. furnace chamber is maintained into second temperature and carries out High temperature diffusion, this continues to be passed through big nitrogen, small nitrogen, oxygen into furnace chamber in the process
Gas；
G. diffusion furnace furnace chamber is warming up to third temperature while promotes phosphorus atoms, continue to be passed through big nitrogen
H. phosphorus atoms are persistently promoted at a temperature of third, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；
I. cool down and carry out aoxidizing while promoting phosphorus atoms, this continues to be passed through big nitrogen, oxygen into furnace chamber in the process；
J. it comes out of the stove；
Wherein, the first temperature < second temperature < third temperature；
Diffusion furnace initial temperature is arranged at 590-610 DEG C in the step a, first temperature is 770-790 DEG C, described
Second temperature is 807-827 DEG C, and the third temperature is 840-860 DEG C.
6. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 5, special
Sign is: in the step b, cavity temperature being risen to the first temperature with the speed of 0.18-0.22 DEG C/s；In step e, with
Cavity temperature is risen to second temperature by the speed of 0.18-0.22 DEG C/s；In step g, with the speed of 0.18-0.22 DEG C/s by furnace chamber
Temperature rises to third temperature；Cooled down in step i with the speed of 0.18-0.22 DEG C/s.
7. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 5, special
Sign is: the step a flow that big nitrogen is passed through into step i is 1800-2200ml/min；
The flow that oxygen is passed through in step c is 80-120ml/min；The flow that oxygen is passed through in step d is 180-220ml/min；
The flow that oxygen is passed through in step f is 180-220ml/min；The flow that oxygen is passed through in step h is 180-220ml/min；Step
The flow that oxygen is passed through in rapid i is 180-220ml/min；
The flow that small nitrogen is passed through in step d is 180-220ml/min；The flow that small nitrogen is passed through in step f is 80-120ml/min.
8. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 5, special
Sign is: it is 180-220s that the time that oxygen is aoxidized is passed through in the step c；The time of low temperature diffusion is in step d
480-520s；The time of step f high temperature diffusion is 280-320s；The time that phosphorus atoms promote in step h is 180-220s.
9. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 1, special
Sign is: the D. annealing steps again the following steps are included:
A. the monocrystalline silicon piece cell piece after etching is put into annealing furnace, big nitrogen is passed through into annealing furnace boiler tube, be passed through the stream of big nitrogen
Amount is 1500ml/min-3500ml/min；
B. temperature in annealing furnace boiler tube is risen into temperature I in 290-310s, and extracts vacuum to pressure I, temperature I is 740-760
DEG C, pressure I is 160-180MPa；
C. temperature I and pressure I, duration 890-910s are kept；
D. temperature in annealing furnace boiler tube is down to temperature II in 140-160s, temperature II is 640-660 DEG C；
E. annealing furnace intraductal pressure is risen into normal pressure in 90-110s；
F. it comes out of the stove.
10. a kind of preparation method of PERC minute pattern printing monocrystalline solar cells piece according to claim 1, special
Sign is: described to include screen frame and connect the grenadine being fixed in the screen frame, grenadine without net knot minute pattern printing screen plate
It is woven by more warp and weft, each warp and weft in the grenadine are described respectively parallel or perpendicular to screen frame
Printing Zone and non-printing district are provided on grenadine, the figure of the Printing Zone includes multiple spaced and parallel distributions for printing pair
The secondary grid line hole of grid line and multiple spaced and parallel distributions for printing the main grid string holes of main gate line and for printing periphery sides
The peripheral frame line hole of wire, the pair grid line hole is between adjacent two wefts, each main grid string holes and multiple secondary grid lines
Hole is connected to, and main grid string holes is arranged in a mutually vertical manner with secondary grid line hole, and being provided with multiple conductive silver pastes in the main grid string holes can not
The surrounding of main grid string holes and secondary grid line hole, the shape in peripheral frame line hole is arranged in the minute pattern of transmission, peripheral frame line hole
For waveform or zigzag.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289339A (en) * | 2019-07-18 | 2019-09-27 | 江苏辉伦太阳能科技有限公司 | A kind of solar battery and preparation method thereof |
| CN113206169A (en) * | 2021-04-18 | 2021-08-03 | 安徽华晟新能源科技有限公司 | Aluminum gettering method and aluminum gettering equipment |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269459A (en) * | 2014-09-23 | 2015-01-07 | 中国电子科技集团公司第四十八研究所 | Decompression diffusion technology for manufacturing high-square-resistance battery pieces |
| CN104538500A (en) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | PECVD coating and sintering process for protecting crystalline silicon solar cell against LID and PID |
| CN105304750A (en) * | 2015-09-17 | 2016-02-03 | 江西展宇新能源股份有限公司 | Double successive deposition warming diffusion process |
| CN105977346A (en) * | 2016-07-12 | 2016-09-28 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar battery positive electrode screen printing plate |
| CN106364140A (en) * | 2016-10-25 | 2017-02-01 | 昆山良品丝印器材有限公司 | Film structure for solar crystalline silicon battery slice and printing screen of film structure |
| CN106449874A (en) * | 2016-09-30 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Diffusion technology of Michigan polycrystalline silicon solar cell |
| CN107068790A (en) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | Preparation method, battery, component and the system of p-type PERC solar cells |
| CN107093648A (en) * | 2017-03-22 | 2017-08-25 | 横店集团东磁股份有限公司 | A kind of diffusion annealing and dry etching method applied to solar cell |
-
2017
- 2017-09-04 CN CN201710786330.1A patent/CN109427929B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269459A (en) * | 2014-09-23 | 2015-01-07 | 中国电子科技集团公司第四十八研究所 | Decompression diffusion technology for manufacturing high-square-resistance battery pieces |
| CN104538500A (en) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | PECVD coating and sintering process for protecting crystalline silicon solar cell against LID and PID |
| CN105304750A (en) * | 2015-09-17 | 2016-02-03 | 江西展宇新能源股份有限公司 | Double successive deposition warming diffusion process |
| CN105977346A (en) * | 2016-07-12 | 2016-09-28 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar battery positive electrode screen printing plate |
| CN106449874A (en) * | 2016-09-30 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Diffusion technology of Michigan polycrystalline silicon solar cell |
| CN106364140A (en) * | 2016-10-25 | 2017-02-01 | 昆山良品丝印器材有限公司 | Film structure for solar crystalline silicon battery slice and printing screen of film structure |
| CN107068790A (en) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | Preparation method, battery, component and the system of p-type PERC solar cells |
| CN107093648A (en) * | 2017-03-22 | 2017-08-25 | 横店集团东磁股份有限公司 | A kind of diffusion annealing and dry etching method applied to solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289339A (en) * | 2019-07-18 | 2019-09-27 | 江苏辉伦太阳能科技有限公司 | A kind of solar battery and preparation method thereof |
| CN110289339B (en) * | 2019-07-18 | 2021-05-18 | 江苏辉伦太阳能科技有限公司 | Preparation method of solar cell |
| CN113206169A (en) * | 2021-04-18 | 2021-08-03 | 安徽华晟新能源科技有限公司 | Aluminum gettering method and aluminum gettering equipment |
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|---|---|
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