CN105161574A - High-sheet resistance cell slice diffusion preparation method - Google Patents
High-sheet resistance cell slice diffusion preparation method Download PDFInfo
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 78
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000001301 oxygen Substances 0.000 claims abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 33
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明公开了一种高方阻太阳能电池片的扩散制备方法，该方法包括：将硅片置于氮气气氛的扩散炉中，并在低温条件下，向扩散炉中通入低浓度氧气；之后提升氧气流量，并向所述扩散炉中通入携磷源气体和减小了流量的氮气；升温后继续向扩散炉中通入提升了流量的氧气，和减小了流量的氮气以及携磷源气体；继续提升氧气流量，减小氮气流量；降温，并将所述硅片从所述扩散炉中取出。本发明采用四步梯度通氧的方法，可有效降低硅片表面浓度，减少载流子表面复合，通过降低硅片表面浓度从而提升扩散方阻，进而提高太阳能电池片的效率。
The invention discloses a method for preparing a high-resistance solar battery sheet by diffusion. The method comprises: placing a silicon sheet in a diffusion furnace in a nitrogen atmosphere, and feeding low-concentration oxygen into the diffusion furnace under low temperature conditions; and then Increase the flow rate of oxygen, and feed the phosphorus-carrying source gas and the nitrogen gas with a reduced flow rate into the diffusion furnace; after the temperature rises, continue to feed the oxygen with a raised flow rate, and the nitrogen gas with a reduced flow rate and the nitrogen gas with a reduced flow rate into the diffusion furnace. source gas; continue to increase the flow rate of oxygen, reduce the flow rate of nitrogen; lower the temperature, and take out the silicon wafer from the diffusion furnace. The invention adopts a four-step gradient oxygen flow method, which can effectively reduce the surface concentration of the silicon chip, reduce the surface recombination of carriers, increase the diffusion square resistance by reducing the surface concentration of the silicon chip, and further improve the efficiency of the solar cell.
Description
技术领域technical field
本发明属于太阳能电池片的制造领域，具体地说，涉及一种高方阻电池片的扩散制备方法。The invention belongs to the field of manufacturing solar cells, and in particular relates to a method for preparing a high-resistivity cell by diffusion.
背景技术Background technique
太阳能电池是一种直接将太阳能转换为电能的器件，其主要利用PN结的光生伏特效应将太阳能转化为电能。因为太阳能电池具有清洁、无污染、资源丰富等特点，太阳能发电已经成为一种重要的发电形式。A solar cell is a device that directly converts solar energy into electrical energy. It mainly uses the photovoltaic effect of the PN junction to convert solar energy into electrical energy. Because solar cells are clean, pollution-free, and rich in resources, solar power generation has become an important form of power generation.
随着工艺技术的进步，太阳能电池片的工作效率一直在不断提高。研究人员发现利用低浓度浅发射结(高方阻)可以显著降低太阳能电池片表面的少数载流子复合速度，进而提高短波段的光谱响应。因此，制造太阳能电池片的高方阻发射结是实现进一步提高太阳能电池转换效率的有效途径。With the advancement of process technology, the working efficiency of solar cells has been continuously improved. The researchers found that the use of low-concentration shallow emitter junctions (high square resistance) can significantly reduce the recombination velocity of minority carriers on the surface of solar cells, thereby improving the spectral response in the short-wavelength band. Therefore, manufacturing high-resistance emitter junctions of solar cells is an effective way to further improve the conversion efficiency of solar cells.
目前太阳能电池的扩散技术主要是利用液态三氯氧磷(POCl3)进行扩散。三氯氧磷在高温扩散过程中会分解出磷的氯化物，为了使磷源在扩散过程中充分反应，在工艺过程中通常保持富氧状态，即持续通入恒定过量氧气。液态三氯氧磷扩散过程中反应过程如下：At present, the diffusion technology of solar cells mainly utilizes liquid phosphorus oxychloride (POCl 3 ) for diffusion. Phosphorus oxychloride will decompose phosphorus chloride during the high-temperature diffusion process. In order to make the phosphorus source fully react during the diffusion process, the oxygen-enriched state is usually maintained during the process, that is, a constant excess oxygen is continuously introduced. The reaction process in the liquid phosphorus oxychloride diffusion process is as follows:
2P2O5+5Si＝5SiO2+4P↓2P 2 O 5 +5Si＝5SiO 2 +4P↓
可以看到，在富氧状态下太阳能电池片的表面掺杂浓度大，方阻相对较低，从而增加了少数载流子复合，减少光电流收集，致使太阳能电池片效率相对偏低。It can be seen that in the oxygen-rich state, the doping concentration on the surface of the solar cell is high, and the square resistance is relatively low, which increases the recombination of minority carriers and reduces the collection of photocurrent, resulting in a relatively low efficiency of the solar cell.
发明内容Contents of the invention
为了解决现有技术中存在的缺陷，提高太阳能电池片的效率，本发明提供了一种高方组电池片的扩散制备方法。In order to solve the defects existing in the prior art and improve the efficiency of the solar cells, the invention provides a method for the diffusion preparation of the high-square solar cells.
根据本发明的一个方面，提供一种高方阻太阳能电池片的扩散制备方法，包括如下步骤：According to one aspect of the present invention, there is provided a method for preparing a high-resistivity solar cell, comprising the steps of:
一种高方阻太阳能电池片的扩散制备方法，其特征在于，包括如下步骤：A kind of diffusion preparation method of high square resistance solar battery sheet, it is characterized in that, comprises the following steps:
a)将硅片置于扩散炉中，并在低温条件下，向所述扩散炉中通入低浓度氧气；所述氧气流量为0.3L/min～1.5L/min；a) placing the silicon wafer in a diffusion furnace, and feeding low-concentration oxygen into the diffusion furnace under low temperature conditions; the oxygen flow rate is 0.3L/min-1.5L/min;
所述扩散炉中为氮气气氛；所述氮气流量为19L/min～21L/min；The diffusion furnace is a nitrogen atmosphere; the nitrogen flow rate is 19L/min～21L/min;
b)继续向所述扩散炉中通入氧气，所述氧气流量为0.6L/min～1.8L/min；b) continue to feed oxygen into the diffusion furnace, the oxygen flow rate is 0.6L/min～1.8L/min;
向所述扩散炉中通入携磷源气体和氮气；所述氮气流量为18.7L/min～20.7L/min；Introduce phosphorus-carrying source gas and nitrogen into the diffusion furnace; the nitrogen flow rate is 18.7L/min～20.7L/min;
c)将温度提升至高温条件，继续向所述扩散炉中通入氧气，所述氧气流量为0.9L/min～2.1L/min；c) raising the temperature to a high temperature condition, and continuing to feed oxygen into the diffusion furnace, and the flow rate of the oxygen is 0.9L/min～2.1L/min;
向所述扩散炉中通入携磷源气体和氮气，所述氮气流量为18.4L/min～20.4L/min；Feed phosphorus-carrying source gas and nitrogen into the diffusion furnace, and the nitrogen flow rate is 18.4L/min～20.4L/min;
d)继续向所述扩散炉中通入氧气，所述氧气流量为1.2L/min～2.4L/min；d) continue to feed oxygen into the diffusion furnace, the oxygen flow rate is 1.2L/min～2.4L/min;
向所述扩散炉中通入携磷源气体和氮气，所述氮气流量为18.1L/min～20.1L/min；Passing phosphorus-carrying source gas and nitrogen into the diffusion furnace, the nitrogen flow rate is 18.1L/min～20.1L/min;
e)降温，并将所述硅片从所述扩散炉中取出。e) Lowering the temperature, and taking the silicon wafer out of the diffusion furnace.
根据本发明的一个具体实施方式，所述低温条件的温度范围为700℃～800℃。According to a specific embodiment of the present invention, the temperature range of the low temperature condition is 700°C to 800°C.
根据本发明的又一个具体实施方式，所述步骤a)中，向所述扩散炉通入低浓度氧气的时间为5min～7min。According to yet another specific embodiment of the present invention, in the step a), the time for feeding low-concentration oxygen into the diffusion furnace is 5 minutes to 7 minutes.
根据本发明的又一个具体实施方式，所述步骤b)的持续时间为7min～10min。According to yet another specific embodiment of the present invention, the duration of step b) is 7 minutes to 10 minutes.
根据本发明的又一个具体实施方式，所述高温条件的温度范围为800℃～900℃。According to yet another specific embodiment of the present invention, the temperature range of the high temperature condition is 800°C to 900°C.
根据本发明的又一个具体实施方式，所述步骤c)的持续时间为10min～15min。According to yet another specific embodiment of the present invention, the duration of step c) is 10 minutes to 15 minutes.
根据本发明的又一个具体实施方式，所述步骤d)的持续时间为10min～15min。According to yet another specific embodiment of the present invention, the duration of step d) is 10 minutes to 15 minutes.
根据本发明的又一个具体实施方式，所述携磷源气体为氮气，其中所述磷源为三氯氧磷。According to yet another specific embodiment of the present invention, the phosphorus-carrying source gas is nitrogen, wherein the phosphorus source is phosphorus oxychloride.
本发明提供的四步梯度通氧的方法，适用于高方阻电池片的技术要求。相对于单纯降低扩散温度的扩散方法，四步梯度通氧可有效降低硅片表面浓度，减少载流子表面复合，配合丝网浆料可有效提升电池片短路电流及转换效率；且该操作过程简单易行，不增加生产成本，易于推广。The four-step gradient oxygen passing method provided by the present invention is suitable for the technical requirements of high square resistance cells. Compared with the diffusion method that simply reduces the diffusion temperature, the four-step gradient oxygen flow can effectively reduce the surface concentration of the silicon wafer, reduce the surface recombination of carriers, and cooperate with the screen paste to effectively improve the short-circuit current and conversion efficiency of the cell; and the operation process It is simple and easy to implement, does not increase the production cost, and is easy to popularize.
附图说明Description of drawings
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：Other characteristics, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:
图1所示为根据本发明提供的一种高方租太阳能电池片的扩散制备方法的流程示意图。FIG. 1 is a schematic flowchart of a method for preparing a high square rent solar cell by diffusion according to the present invention.
附图中相同或相似的附图标记代表相同或相似的部件。The same or similar reference numerals in the drawings represent the same or similar components.
具体实施方式Detailed ways
下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。此外，本发明可以在不同例子中重复参考数字和/或字母。这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。应当注意，在附图中所图示的部件不一定按比例绘制。本发明省略了对公知组件和处理技术及工艺的描述以避免不必要地限制本发明。The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and/or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. It should be noted that components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted herein to avoid unnecessarily limiting the present invention.
参考图1，图1所示为根据本发明提供的一种高方租太阳能电池片的扩散制备方法的流程示意图。Referring to FIG. 1 , FIG. 1 is a schematic flowchart of a method for preparing a high square rent solar cell by diffusion according to the present invention.
步骤S101，将硅片置于扩散炉中，在较低温度下，进行回温氧化。所述扩散炉中为氮气气氛。In step S101, the silicon wafer is placed in a diffusion furnace, and subjected to back-temperature oxidation at a lower temperature. The diffusion furnace is a nitrogen atmosphere.
在低温条件下，向所述扩散炉中通入低浓度氧气，可选的，所述低温条件的温度范围为700℃～800℃，例如：700℃、750℃或800℃。可选的，所述低浓度氧气的浓度范围为0.3L/min～1.5L/min，例如：0.3L/min、0.8L/min或1.5L/min。Under low temperature conditions, a low concentration of oxygen is introduced into the diffusion furnace. Optionally, the temperature range of the low temperature conditions is 700°C to 800°C, for example: 700°C, 750°C or 800°C. Optionally, the low-concentration oxygen concentration ranges from 0.3L/min to 1.5L/min, for example: 0.3L/min, 0.8L/min or 1.5L/min.
其中，向所述扩散炉通入低浓度氧气的时间为5min～7min，例如：5min，6min或者7min。Wherein, the time for feeding low-concentration oxygen into the diffusion furnace is 5 minutes to 7 minutes, for example: 5 minutes, 6 minutes or 7 minutes.
为了保持扩散炉中的氮气气氛，氮气流量保持在19L/min～21L/min；例如：19L/min、20L/min或21L/min。In order to maintain the nitrogen atmosphere in the diffusion furnace, the nitrogen flow rate is kept at 19L/min~21L/min; for example: 19L/min, 20L/min or 21L/min.
步骤S102，继续向所述扩散炉中通入氧气，该氧气流量比步骤S101中的氧气流量提升0.3L/min，即为0.6L/min～1.8L/min。优选的，所述氧气流量例如：0.6L/min、1.0L/min或1.8L/min。优选的，所述步骤S102的持续时间为7min～10min，例如：7min，8.5min或者10min。Step S102, continue to feed oxygen into the diffusion furnace, the oxygen flow rate is 0.3L/min higher than the oxygen flow rate in step S101, that is, 0.6L/min˜1.8L/min. Preferably, the oxygen flow rate is, for example: 0.6L/min, 1.0L/min or 1.8L/min. Preferably, the duration of step S102 is 7 minutes to 10 minutes, for example: 7 minutes, 8.5 minutes or 10 minutes.
在通入氧气的同时，向所述扩散炉中通入携磷源气体和氮气。优选的，所述携磷源气体为氮气，其中所述磷源为三氯氧磷。优选的，所述氮气流量比步骤S101中的氮气流量减少0.3L/min，即为18.7L/min～20.7L/min，例如：18.7L/min、19.7L/min或20.7L/min。While feeding oxygen, feed phosphorus-carrying source gas and nitrogen into the diffusion furnace. Preferably, the phosphorus-carrying source gas is nitrogen, and the phosphorus source is phosphorus oxychloride. Preferably, the nitrogen flow rate is 0.3 L/min less than the nitrogen flow rate in step S101 , that is, 18.7 L/min˜20.7 L/min, for example: 18.7 L/min, 19.7 L/min or 20.7 L/min.
步骤S103，将温度提升至高温条件。优选的，所述高温条件的温度范围为800℃～900℃，例如：800℃、850℃或900℃。在高温条件下，继续向所述扩散炉中通入氧气，氧气流量比所述步骤S102中的氧气流量提升0.3L/min，即为0.9L/min～2.1L/min。优选的，所述氧气流量例如：0.9L/min、1.5L/min或2.1L/min。Step S103, raising the temperature to a high temperature condition. Preferably, the temperature range of the high temperature condition is 800°C-900°C, for example: 800°C, 850°C or 900°C. Under high temperature conditions, continue to feed oxygen into the diffusion furnace, and the flow rate of oxygen is increased by 0.3 L/min compared with the flow rate of oxygen in step S102 , that is, 0.9 L/min˜2.1 L/min. Preferably, the oxygen flow rate is, for example: 0.9L/min, 1.5L/min or 2.1L/min.
向所述扩散炉中通入携磷源气体和氮气，氮气流量比所述步骤S102中的氮气流量减小0.3L/min，即为18.4L/min～20.4L/min，例如：18.4L/min、19.4L/min或20.4L/min。Feed phosphorus-carrying source gas and nitrogen into the diffusion furnace, and the nitrogen flow rate is 0.3 L/min lower than the nitrogen flow rate in step S102, which is 18.4 L/min to 20.4 L/min, for example: 18.4 L/min min, 19.4L/min or 20.4L/min.
优选的，所述步骤S103的持续时间为10min～15min，例如：10min，12.5min或者15min。Preferably, the duration of step S103 is 10 minutes to 15 minutes, for example: 10 minutes, 12.5 minutes or 15 minutes.
步骤S104，继续向所述扩散炉中通入氧气，氧气流量比所述步骤S103中氧气流量提升0.3L/min，即为1.2L/min～2.4L/min。优选的，所述氧气流量例如：1.2L/min、1.8L/min或2.4L/min。Step S104, continue to feed oxygen into the diffusion furnace, and the oxygen flow rate is increased by 0.3L/min compared with the oxygen flow rate in step S103, that is, 1.2L/min˜2.4L/min. Preferably, the oxygen flow rate is, for example: 1.2L/min, 1.8L/min or 2.4L/min.
向所述扩散炉中通入携磷源气体和氮气，氮气流量比所述步骤S103中的氮气流量减小0.3L/min，即为18.1L/min～20.1L/min，例如：18.1L/min、19.1L/min或20.1L/min。Feed phosphorus-carrying source gas and nitrogen into the diffusion furnace, and the nitrogen flow rate is 0.3 L/min lower than the nitrogen flow rate in step S103, which is 18.1 L/min to 20.1 L/min, for example: 18.1 L/min min, 19.1L/min or 20.1L/min.
优选的，所述步骤S104的持续时间为10min～15min，例如：10min，12.5min或者15min。Preferably, the duration of step S104 is 10 minutes to 15 minutes, for example: 10 minutes, 12.5 minutes or 15 minutes.
至此，四步梯度通氧过程结束，执行步骤S105，降温，并将扩散制备好的硅片从所述扩散炉中取出。So far, the four-step gradient oxygen flow process is over, and step S105 is performed to lower the temperature, and the silicon wafer prepared by diffusion is taken out of the diffusion furnace.
下面分别采用本发明提供的方法和常规的扩散工艺对硅片进行扩散，并对所获得的太阳能电池片参数进行比较。Next, the method provided by the present invention and the conventional diffusion process are respectively used to diffuse the silicon wafer, and the parameters of the obtained solar cells are compared.
实施例一，采用本发明提供的扩散方法：Embodiment one, adopt the diffusion method provided by the present invention:
将待处理的硅片置于扩散炉中，同时在700℃～800℃下，通入氧气，炉内环境氮气气氛。氧气流量为0.3L/min～1.5L/min。向扩散炉内通入气体的时间为5min～7min。Place the silicon wafer to be processed in a diffusion furnace, and at the same time, pass in oxygen at 700°C to 800°C, and the atmosphere in the furnace is a nitrogen atmosphere. The oxygen flow rate is 0.3L/min～1.5L/min. The time for passing gas into the diffusion furnace is 5 minutes to 7 minutes.
待温度稳定后，继续通入氧气，其中该氧气流量较之之前步骤提升0.3L/min；同时通入携磷源气体和氮气进行预淀积，其中氮气流量较之之前步骤降低0.3L/min。通气时间持续7min～10min。After the temperature stabilizes, continue to feed oxygen, wherein the oxygen flow rate is increased by 0.3L/min compared with the previous step; at the same time, feed phosphorus-carrying source gas and nitrogen gas for pre-deposition, and the nitrogen flow rate is reduced by 0.3L/min compared with the previous step . The ventilation time lasts 7 minutes to 10 minutes.
升高温度至800℃～900℃，继续通入携磷源气体和氮气，氧气流量在上一步基础上继续提升0.3L/min，同时氮气流量减少0.3L/min。通气时间持续10min～15min。Raise the temperature to 800°C-900°C, continue to introduce phosphorus-carrying source gas and nitrogen, and continue to increase the oxygen flow rate by 0.3L/min on the basis of the previous step, while reducing the nitrogen flow rate by 0.3L/min. The ventilation time lasts 10 minutes to 15 minutes.
待温度稳定后，通入携磷源气体和氮气。同时通入氧气，氧气流量较之之前步骤继续提升0.3L/min。为了维持总气体流量不变，氮气流量较之之前前步骤减少0.3L/min。通气时间持续10min～15min。After the temperature stabilized, the phosphorus-carrying source gas and nitrogen gas were introduced. At the same time, oxygen is introduced, and the oxygen flow rate continues to increase by 0.3L/min compared with the previous step. In order to keep the total gas flow constant, the nitrogen flow was reduced by 0.3 L/min compared with the previous step. The ventilation time lasts 10 minutes to 15 minutes.
降温出舟，完成扩散过程。Cool down and leave the boat to complete the diffusion process.
实施例一采用的硅片如下：The silicon chip that embodiment one adopts is as follows:
实施例二，采用常规扩散工艺：Embodiment two, adopt conventional diffusion process:
将待处理的硅片置于扩散炉中，同时在低温条件下，通入足量恒定流量氧气，炉内环境氮气气氛。Place the silicon wafer to be processed in a diffusion furnace, and at the same time, under low temperature conditions, a sufficient amount of constant flow of oxygen is introduced, and the furnace is surrounded by a nitrogen atmosphere.
待温度稳定，继续通入氧气，且流量不变，同时通入携磷源气体和氮气进行预淀积。When the temperature is stable, continue to feed oxygen with a constant flow rate, and simultaneously feed phosphorus-carrying source gas and nitrogen for pre-deposition.
停止通入携磷源气体和干氧，继续通入氮气，升温5min。Stop feeding the phosphorus-carrying source gas and dry oxygen, continue feeding nitrogen, and raise the temperature for 5 minutes.
待温度升高后继续通入携磷源气体、干氧和氮气进行分歩推阱，推阱时间30min，干氧流量始终保持不变。After the temperature rises, continue to introduce phosphorus-carrying source gas, dry oxygen and nitrogen to carry out step-by-step trap pushing. The trap pushing time is 30 minutes, and the flow rate of dry oxygen remains unchanged.
降温出舟，完成扩散过程。Cool down and leave the boat to complete the diffusion process.
实施例二采用的硅片如下：The silicon chip that embodiment two adopts is as follows:
实施例一与实施例二采用同一批硅片进行扩散，其他工艺均正常。对制得的太阳能电池片进行检测得到的参数参见下表：Embodiment 1 and Embodiment 2 use the same batch of silicon wafers for diffusion, and other processes are normal. The parameters obtained by detecting the solar cells made are shown in the table below:
从上述对比方案及结果可以看出，本发明提供的扩散制备方法因其降低了扩散表面浓度，造成硅片表面均匀性降低。同时配合丝网印刷制备的太阳能电池片的光电转换效率为17.71％。而常规工艺制备的太阳能电池片的光电转换效率为17.648％。本方法制备的太阳能电池片的光电转换效率提升了0.062％，提升效果明显；在短路电流方面，本发明为8.6126A，而常规工艺为8.5996A，提高了13mA，符合初始理论设想。It can be seen from the above comparative schemes and results that the diffusion preparation method provided by the present invention reduces the surface uniformity of the silicon wafer due to the reduction of the concentration of the diffusion surface. At the same time, the photoelectric conversion efficiency of the solar cells prepared by screen printing is 17.71%. However, the photoelectric conversion efficiency of the solar cells prepared by the conventional process is 17.648%. The photoelectric conversion efficiency of the solar cells prepared by the method is increased by 0.062%, and the improvement effect is obvious; in terms of short-circuit current, the invention is 8.6126A, while the conventional process is 8.5996A, which is increased by 13mA, which meets the initial theoretical assumption.
本发明提出的高方阻太阳能电池片的扩散制备方法，采用降低前期氧气流量，并分四步梯度式升高氧气流量，同时保持磷源流量不变，并通过调节氮气流量使总流量提升。相对于传统方法，本方面提出的方法在回温氧化过程中先在硅片表面覆盖一层薄氧化层，因氮气流量的提升相对降低了扩散源浓度；随后进行表面预淀积，随着氧气流量的提升，使硅片表面的磷源逐渐反应；因为硅片表面扩散浓度降低，使其方块电阻的表面均匀性降低。扩散好的硅片再进行丝网印刷等后续工艺后，制备成的太阳能电池片在开路电压和短路电流上均有所提升。The diffusion preparation method of high square resistance solar cells proposed by the present invention adopts the method of reducing the oxygen flow rate in the early stage, and increasing the oxygen flow rate in four steps, while keeping the phosphorus source flow rate constant, and increasing the total flow rate by adjusting the nitrogen gas flow rate. Compared with the traditional method, the method proposed in this aspect first covers a thin oxide layer on the surface of the silicon wafer during the temperature recovery oxidation process, and the concentration of the diffusion source is relatively reduced due to the increase of the nitrogen flow rate; then the surface is pre-deposited, and the oxygen The increase of the flow rate makes the phosphorus source on the surface of the silicon wafer gradually react; because the diffusion concentration on the surface of the silicon wafer decreases, the surface uniformity of the sheet resistance decreases. After the diffused silicon wafers are subjected to subsequent processes such as screen printing, the prepared solar cells have improved open circuit voltage and short circuit current.
虽然关于示例实施例及其优点已经详细说明，应当理解在不脱离本发明的精神和所附权利要求限定的保护范围的情况下，可以对这些实施例进行各种变化、替换和修改。对于其他例子，本领域的普通技术人员应当容易理解在保持本发明保护范围内的同时，工艺步骤的次序可以变化。Although the example embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made to these embodiments without departing from the spirit of the invention and the scope of protection as defined by the appended claims. For other examples, those of ordinary skill in the art will readily understand that the order of process steps may be varied while remaining within the scope of the present invention.
此外，本发明的应用范围不局限于说明书中描述的特定实施例的工艺、机构、制造、物质组成、手段、方法及步骤。从本发明的公开内容，作为本领域的普通技术人员将容易地理解，对于目前已存在或者以后即将开发出的工艺、机构、制造、物质组成、手段、方法或步骤，其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果，依照本发明可以对它们进行应用。因此，本发明所附权利要求旨在将这些工艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。In addition, the scope of application of the present invention is not limited to the process, mechanism, manufacture, material composition, means, methods and steps of the specific embodiments described in the specification. From the disclosure of the present invention, those of ordinary skill in the art will easily understand that for the processes, mechanisms, manufacturing, material compositions, means, methods or steps that currently exist or will be developed in the future, they are implemented in accordance with the present invention Corresponding embodiments described which function substantially the same or achieve substantially the same results may be applied in accordance with the present invention. Therefore, the appended claims of the present invention are intended to include these processes, mechanisms, manufacture, material compositions, means, methods or steps within their protection scope.
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