CN105161574A - High-sheet resistance cell slice diffusion preparation method - Google Patents
High-sheet resistance cell slice diffusion preparation method Download PDFInfo
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- CN105161574A CN105161574A CN201510605260.6A CN201510605260A CN105161574A CN 105161574 A CN105161574 A CN 105161574A CN 201510605260 A CN201510605260 A CN 201510605260A CN 105161574 A CN105161574 A CN 105161574A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000001301 oxygen Substances 0.000 claims abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 26
- 239000011574 phosphorus Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 24
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 241001012508 Carpiodes cyprinus Species 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a high-sheet resistance cell slice diffusion preparation method. The method comprises steps: a silicon wafer is placed in a diffusion furnace in a nitrogen atmosphere, and in a low temperature condition, low concentration oxygen is inlet to the diffusion furnace; an oxygen flow is enhanced afterwards, a gas carrying a phosphorus source and the nitrogen with a reduced flow are inlet to the diffusion furnace; after temperature rise, the oxygen with the enhanced flow, the nitrogen with the reduced flow and the gas carrying the phosphorus source are inlet continuously to the diffusion furnace; the oxygen flow is enhanced continuously, and the nitrogen flow is reduced; and temperature falls, and the silicon wafer is taken out from the diffusion furnace. A four-step gradient oxygen inletting method is adopted, the silicon wafer surface concentration can be effectively reduced, surface recombination of carriers is reduced, the diffusion sheet resistance is enhanced through reducing the silicon wafer surface concentration, and the solar cell efficiency is further improved.
Description
Technical field
The invention belongs to the manufacture field of solar battery sheet, specifically, relate to a kind of scattering preparation of high sheet resistance battery sheet.
Background technology
Solar cell is a kind of device directly solar energy being converted to electric energy, and it mainly utilizes the photovoltaic effect of PN junction to convert solar energy into electrical energy.Because solar cell has the features such as clean, pollution-free, aboundresources, solar power generation has become a kind of important forms of electricity generation.
Along with the progress of technology, the operating efficiency of solar battery sheet is improving constantly always.Researcher finds to utilize the shallow emitter junction of low concentration (high square resistance) significantly can reduce the minority carrier recombination speed on solar battery sheet surface, and then improves the spectral response of short-wave band.Therefore, the high square resistance emitter junction manufacturing solar battery sheet is the effective way realizing improving further conversion efficiency of solar cell.
The diffusion technique of current solar cell mainly utilizes liquid phosphorus oxychloride (POCl
3) spread.Phosphorus oxychloride can decomposite the chloride of phosphorus in high-temperature diffusion process, in order to make phosphorus source fully react in diffusion process, usually keeping oxygen enrichment state, namely continue to pass into constant excessive oxygen in technical process.In liquid phosphorus oxychloride diffusion process, course of reaction is as follows:
2P
2O
5+5Si＝5SiO
2+4P↓
Can see, under oxygen enrichment state, the surface dopant concentration of solar battery sheet is large, and sheet resistance is relatively low, thus adds minority carrier recombination, reduces photoelectric current and collects, cause solar battery sheet efficiency relatively on the low side.
Summary of the invention
In order to solve the defect existed in prior art, improving the efficiency of solar battery sheet, the invention provides a kind of scattering preparation of high side's Battery pack sheet.
According to an aspect of the present invention, a kind of scattering preparation of high square resistance solar battery sheet is provided, comprises the steps:
A scattering preparation for high square resistance solar battery sheet, is characterized in that, comprises the steps:
A) silicon chip is placed in diffusion furnace, and under cryogenic, in described diffusion furnace, passes into low concentration oxygen; Described oxygen flow is 0.3L/min ~ 1.5L/min;
It is nitrogen atmosphere in described diffusion furnace; Described nitrogen flow is 19L/min ~ 21L/min;
B) continue to pass into oxygen in described diffusion furnace, described oxygen flow is 0.6L/min ~ 1.8L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen; Described nitrogen flow is 18.7L/min ~ 20.7L/min;
C) by temperature increase to hot conditions, continue to pass into oxygen in described diffusion furnace, described oxygen flow is 0.9L/min ~ 2.1L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, described nitrogen flow is 18.4L/min ~ 20.4L/min;
D) continue to pass into oxygen in described diffusion furnace, described oxygen flow is 1.2L/min ~ 2.4L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, described nitrogen flow is 18.1L/min ~ 20.1L/min;
E) lower the temperature, and described silicon chip is taken out from described diffusion furnace.
According to a specific embodiment of the present invention, the temperature range of described cryogenic conditions is 700 DEG C ~ 800 DEG C.
According to another embodiment of the present invention, described step a) in, the time passing into low concentration oxygen to described diffusion furnace is 5min ~ 7min.
According to another embodiment of the present invention, described step b) duration be 7min ~ 10min.
According to another embodiment of the present invention, the temperature range of described hot conditions is 800 DEG C ~ 900 DEG C.
According to another embodiment of the present invention, described step c) duration be 10min ~ 15min.
According to another embodiment of the present invention, described steps d) duration be 10min ~ 15min.
According to another embodiment of the present invention, described in take phosphorus source gas be nitrogen, wherein said phosphorus source is phosphorus oxychloride.
Four step gradients provided by the invention lead to the method for oxygen, are applicable to the technical requirement of high sheet resistance battery sheet.Relative to the simple method of diffusion reducing diffusion temperature, four step gradients lead to oxygen can effectively reduce silicon chip surface concentration, reduces charge carrier surface recombination, coordinates silk screen slurry can effectively promote cell piece short circuit current and conversion efficiency; And this operating process is simple, does not increase production cost, be easy to promote.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Figure 1 shows that the schematic flow sheet renting the scattering preparation of solar battery sheet according to a kind of high side provided by the invention.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
With reference to figure 1, Figure 1 shows that the schematic flow sheet renting the scattering preparation of solar battery sheet according to a kind of high side provided by the invention.
Step S101, is placed in diffusion furnace by silicon chip, at a lower temperature, carries out oxidation of rising again.It is nitrogen atmosphere in described diffusion furnace.
Under cryogenic, in described diffusion furnace, pass into low concentration oxygen, optionally, the temperature range of described cryogenic conditions is 700 DEG C ~ 800 DEG C, such as: 700 DEG C, 750 DEG C or 800 DEG C.Optionally, the concentration range of described low concentration oxygen is 0.3L/min ~ 1.5L/min, such as: 0.3L/min, 0.8L/min or 1.5L/min.
Wherein, the time passing into low concentration oxygen to described diffusion furnace is 5min ~ 7min, such as: 5min, 6min or 7min.
In order to keep the nitrogen atmosphere in diffusion furnace, nitrogen flow remains on 19L/min ~ 21L/min; Such as: 19L/min, 20L/min or 21L/min.
Step S102, continues to pass into oxygen in described diffusion furnace, and this oxygen flow promotes 0.3L/min than the oxygen flow in step S101, is 0.6L/min ~ 1.8L/min.Preferably, described oxygen flow such as: 0.6L/min, 1.0L/min or 1.8L/min.Preferably, the duration of described step S102 is 7min ~ 10min, such as: 7min, 8.5min or 10min.
While passing into oxygen, pass in described diffusion furnace and take phosphorus source gas and nitrogen.Preferably, described in take phosphorus source gas be nitrogen, wherein said phosphorus source is phosphorus oxychloride.Preferably, described nitrogen flow reduces 0.3L/min than the nitrogen flow in step S101, is 18.7L/min ~ 20.7L/min, such as: 18.7L/min, 19.7L/min or 20.7L/min.
Step S103, by temperature increase to hot conditions.Preferably, the temperature range of described hot conditions is 800 DEG C ~ 900 DEG C, such as: 800 DEG C, 850 DEG C or 900 DEG C.Under the high temperature conditions, continue to pass into oxygen in described diffusion furnace, oxygen flow promotes 0.3L/min than the oxygen flow in described step S102, is 0.9L/min ~ 2.1L/min.Preferably, described oxygen flow such as: 0.9L/min, 1.5L/min or 2.1L/min.
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, nitrogen flow reduces 0.3L/min than the nitrogen flow in described step S102, is 18.4L/min ~ 20.4L/min, such as: 18.4L/min, 19.4L/min or 20.4L/min.
Preferably, the duration of described step S103 is 10min ~ 15min, such as: 10min, 12.5min or 15min.
Step S104, continues to pass into oxygen in described diffusion furnace, and oxygen flow promotes 0.3L/min than oxygen flow in described step S103, is 1.2L/min ~ 2.4L/min.Preferably, described oxygen flow such as: 1.2L/min, 1.8L/min or 2.4L/min.
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, nitrogen flow reduces 0.3L/min than the nitrogen flow in described step S103, is 18.1L/min ~ 20.1L/min, such as: 18.1L/min, 19.1L/min or 20.1L/min.
Preferably, the duration of described step S104 is 10min ~ 15min, such as: 10min, 12.5min or 15min.
So far, four step gradients are led to oxygen process and are terminated, and perform step S105, cooling, and silicon chip diffusion got ready takes out from described diffusion furnace.
Adopt method provided by the invention and conventional diffusion technology to spread silicon chip below respectively, and obtained solar battery sheet parameter is compared.
Embodiment one, adopts method of diffusion provided by the invention:
Pending silicon chip is placed in diffusion furnace, simultaneously at 700 DEG C ~ 800 DEG C, passes into oxygen, furnace inner environment nitrogen atmosphere.Oxygen flow is 0.3L/min ~ 1.5L/min.The time passing into gas in diffusion furnace is 5min ~ 7min.
After temperature stabilization, continue to pass into oxygen, wherein this oxygen flow is than the 0.3L/min of step lifting before; Pass into simultaneously and take phosphorus source gas and nitrogen carries out pre-deposited, wherein nitrogen flow reduces 0.3L/min than step before.Duration of ventilation continues 7min ~ 10min.
Raised temperature to 800 DEG C ~ 900 DEG C, continues to pass into and takes phosphorus source gas and nitrogen, and oxygen flow continues to promote 0.3L/min on previous step basis, and nitrogen flow reduces 0.3L/min simultaneously.Duration of ventilation continues 10min ~ 15min.
After temperature stabilization, pass into and take phosphorus source gas and nitrogen.Pass into oxygen, oxygen flow promotes 0.3L/min than step continuation before simultaneously.Constant in order to maintain total gas couette, nitrogen flow reduces 0.3L/min than step before before.Duration of ventilation continues 10min ~ 15min.
Lower the temperature and boat, complete diffusion process.
The silicon chip that embodiment one adopts is as follows:
Embodiment two, adopts conventional diffusion processes:
Pending silicon chip is placed in diffusion furnace, under cryogenic, passes into enough constant flow rate oxygen, furnace inner environment nitrogen atmosphere simultaneously.
Treat temperature stabilization, continue to pass into oxygen, and flow is constant, pass into simultaneously and take phosphorus source gas and nitrogen carries out pre-deposited.
Stop passing into taking phosphorus source gas and dry oxygen, continue to pass into nitrogen, intensification 5min.
Continue to pass into after temperature raises and take phosphorus source gas, dry oxygen and nitrogen and enter a row point Walk and push away trap, push away trap time 30min, dry oxygen flow remains constant.
Lower the temperature and boat, complete diffusion process.
The silicon chip that embodiment two adopts is as follows:
Embodiment one and embodiment two adopt and spread with a collection of silicon chip, and other techniques are all normal.Detect to obtained solar battery sheet the parameter obtained to see table:
As can be seen from above-mentioned contrast scheme and result, scattering preparation provided by the invention, because which reducing diffused surface concentration, causes silicon chip surface uniformity to reduce.The photoelectric conversion efficiency of the solar battery sheet simultaneously coordinating silk screen printing to prepare is 17.71%.And the photoelectric conversion efficiency of solar battery sheet prepared by common process is 17.648%.The photoelectric conversion efficiency of solar battery sheet prepared by this method improves 0.062%, promotes successful; In short circuit current, the present invention is 8.6126A, and common process is 8.5996A, improves 13mA, meets initial theory imagination.
The scattering preparation of the high square resistance solar battery sheet that the present invention proposes, adopts and reduces oxygen flow in early stage, and point four step gradient types raise oxygen flow, keeps phosphorus source flux constant simultaneously, and by regulating nitrogen flow to make total flow promote.Relative to conventional method, the method that this aspect proposes covers one deck thin oxide layer at silicon chip surface, because the lifting of nitrogen flow reduces diffuse source concentration relatively in the elder generation in oxidizing process that rises again; Carry out surperficial pre-deposited subsequently, along with the lifting of oxygen flow, the phosphorus source of silicon chip surface is reacted gradually; Because silicon chip surface diffusion concentration reduces, the surface uniformity of its square resistance is reduced.After the silicon chip spread carries out the subsequent techniques such as silk screen printing again, the solar battery sheet be prepared into promotes all to some extent on open circuit voltage and short circuit current.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection range of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in specification, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (8)
1. a scattering preparation for high square resistance solar battery sheet, is characterized in that, comprises the steps:
A) silicon chip is placed in diffusion furnace, and under cryogenic, in described diffusion furnace, passes into low concentration oxygen; Described oxygen flow is 0.3L/min ~ 1.5L/min;
It is nitrogen atmosphere in described diffusion furnace; Described nitrogen flow is 19L/min ~ 21L/min;
B) continue to pass into oxygen in described diffusion furnace, described oxygen flow is 0.6L/min ~ 1.8L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen; Described nitrogen flow is 18.7L/min ~ 20.7L/min;
C) by temperature increase to hot conditions, continue to pass into oxygen in described diffusion furnace, described oxygen flow is 0.9L/min ~ 2.1L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, described nitrogen flow is 18.4L/min ~ 20.4L/min;
D) continue to pass into oxygen in described diffusion furnace, described oxygen flow is 1.2L/min ~ 2.4L/min;
Pass in described diffusion furnace and take phosphorus source gas and nitrogen, described nitrogen flow is 18.1L/min ~ 20.1L/min;
E) lower the temperature, and described silicon chip is taken out from described diffusion furnace.
2. scattering preparation according to claim 1, is characterized in that, the temperature range of described cryogenic conditions is 700 DEG C ~ 800 DEG C.
3. scattering preparation according to claim 1, is characterized in that, described step a) in, the time passing into low concentration oxygen to described diffusion furnace is 5min ~ 7min.
4. scattering preparation according to claim 1, is characterized in that, described step b) duration be 7min ~ 10min.
5. scattering preparation according to claim 1, is characterized in that, the temperature range of described hot conditions is 800 DEG C ~ 900 DEG C.
6. scattering preparation according to claim 1, is characterized in that, described step c) duration be 10min ~ 15min.
7. scattering preparation according to claim 1, is characterized in that, described steps d) duration be 10min ~ 15min.
8. scattering preparation according to claim 1, is characterized in that, described in take phosphorus source gas be nitrogen, wherein said phosphorus source is phosphorus oxychloride.
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Cited By (1)
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| CN109244193A (en) * | 2018-10-27 | 2019-01-18 | 江苏东鋆光伏科技有限公司 | A kind of solar battery sheet preparation process and process control system |
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