CN111769034A - Preparation method of gradient PN junction material - Google Patents
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Abstract
The invention relates to the technical field of semiconductors, in particular to a preparation method of a gradient PN junction material, which comprises the following steps: setting the growth condition of LPCVD to delay the change layer; the growth conditions were set by the following method: (1) setting partial growth conditions; (2) setting the maximum value a and the minimum value b of the carrier concentration of the graded layer and the maximum flow rate c and the minimum flow rate d of the corresponding doping sources; (3) calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer; (4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished. The technology for preparing the graded junction on the epitaxial layer through the epitaxial method is easy, the linear relation of the carrier concentration of the prepared graded junction along with the thickness change is good, the quality of the formed graded junction is stable, the defects of crystal points in the graded junction are few, and the quality of the graded junction is stable.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a gradient PN junction material.
Background
PN (p-n junction) junctions have unidirectional conductivity and are an important property utilized by many devices in electronics. Graded p-n junctions pn junctions are pn junctions with doping concentrations that gradually change from p-region to n-region. The main significance of the gradual change PN junction in the preparation process of the SiC device is that the width of a space charge region of the PN junction is changed and the withstand voltage condition of the device is changed by changing the doping concentration.
In electrical performance, abrupt junctions are generally shallow junctions, and the resulting voltage is relatively low. The graded junction is a deep junction, and the voltage formed is relatively high. The capacitance of the abrupt junction is sensitive to voltage changes, while the capacitance of the graded junction is less sensitive to voltage changes first. By changing the electrical characteristics of the junction, we can design some devices with special properties.
Examples of the method for producing the PN junction include an alloy method, a diffusion method, and an ion implantation method. Compared with the conventional abrupt junction, the gradual junction is difficult to control accurately in the processes of ion implantation, diffusion and the like.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a preparation method of a PN junction material for growing a linear controllable graded junction by an LPCVD epitaxial method.
The purpose of the invention is realized by the following technical scheme:
a preparation method of a gradient PN junction material comprises the following steps:
setting the growth condition of LPCVD chemical vapor deposition method to delay the change layer;
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials; and reasonably setting growth gas and reaction conditions according to the difficulty and the quality of 4H-SiC growth.
(2) Setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating the maximum flow rate c and the minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1); the maximum flow rate c and the minimum flow rate d of the doping source required by the maximum value a and the minimum value b can be determined through previous experimental records, or a carrier concentration-doping source quality change model is established, and the maximum flow rate c and the minimum flow rate d are determined through the change model, wherein the flow rates are mass flow rates or volume flow rates;
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer; the growth rate of the slowly-changing layer can be determined through previous experimental records, and can also be calculated through establishing a model;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce within the growth time e, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished.
Under the conditions of high temperature and low pressure, the invention realizes the change of the carrier concentration by adjusting the doping amount of the doping source in the growth process, compared with the conventional alloy method, diffusion method and ion implantation method for manufacturing PN junctions, the technology for preparing the graded junction on the epitaxial layer by the epitaxial method is easier, the linear relation of the carrier concentration of the prepared graded junction along with the change of the thickness is better, the quality of the formed graded junction is more stable, the defects of crystal points in the graded junction are less, the quality of the graded junction is stable, the thickness control precision is high, and the control can be controlled within +/-0.1 mu m.
The growth method defined by the invention is not limited to the external delay layer on the N-type silicon carbide substrate, and can also carry out the extension of the slow change layer on the conventional epitaxial layer grown on the N-type silicon carbide substrate and also carry out the overlapping of the slow change layer on the N-type silicon carbide substrate. In the embodiment of the invention, the double-side polished N-type silicon carbide substrate with the thickness of 340-360 mu m and the deflection angle of 4 degrees or 8 degrees is selected as the outer retardation layer.
The growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is silane or trichlorosilane, the carbon growth source is ethylene or propane, and the doping source is trimethylaluminum.
Wherein the carbon-silicon ratio of the growth gas is 0.7-1.3:1, the flow rate of the carrier gas is 80-150L/min, the temperature of the reaction chamber is 1550-. The carbon-silicon ratio is lower than 0.7 or higher than 1.3, crystal defects are easy to generate, and a high-quality epitaxial layer can be generated by controlling the silicon-carbon ratio, the flow rate of carrier gas and the temperature and the pressure of the reaction chamber, so that the doping efficiency is improved.
Wherein the maximum value a and the minimum value b of the change of the carrier concentration are respectively 2 x 1019And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the desired dopant source are 0.35g/min and 0.017g/min, respectively. Maximum value a and minimum value b are respectively 2 x 1019And 1 x 1018The carrier concentration change can endow the device material with higher voltage withstanding value, and improve the sensitivity of the capacitor to voltage change.
Wherein the thickness of the slow-changing layer is 1 μm. The P-type graded layer having such a thickness has few defects, but the thickness of the P-type single-sided graded junction is not limited to 1 μm, and may be 0.3 to 2.0 μm, specifically, 0.3, 0.4, 0.6, 0.8, 1.2, 1.4, 1.6, 2.0 μm, or the like.
The growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is silane or trichlorosilane, the carbon growth source is ethylene or propane, and the doping source is nitrogen.
Wherein the carbon-silicon ratio of the growth gas is 0.7-1.3:1, the flow rate of the carrier gas is 80-150L/min, the temperature of the reaction chamber is 1550-. The silicon ratio is lower than 0.7 or higher than 1.3, crystal defects are easy to generate, and a high-quality epitaxial layer can be generated by controlling the silicon-carbon ratio, the flow rate of carrier gas and the temperature and pressure of the reaction chamber, so that the doping efficiency is improved.
Wherein the maximum value a and the minimum value b of the change of the carrier concentration are respectively 5 × 1018And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the required dopant source are 100sccm/min and 20sccm/min, respectively. The carrier concentration change can endow the device material with higher voltage withstanding value, and improve the sensitivity of the capacitor to voltage change
Wherein the thickness of the slow-changing layer is 2 μm. The N-type graded layer having such a thickness has few defects, but the thickness of the P-type single-sided graded junction is not limited to 2 μm, and may be 1.0 to 3.0 μm, specifically, may be a numerical value such as 1.0, 1.4, 1.6, 1.8, 2.2, 2.4, 2.6, or 3.0 μm.
The invention has the beneficial effects that: under the conditions of high temperature and low pressure, the invention realizes the change of the carrier concentration by adjusting the doping amount of the doping source in the growth process, compared with the conventional alloy method, diffusion method and ion implantation method for manufacturing PN junctions, the technology for preparing the graded junction on the epitaxial layer by the epitaxial method is easier, the linear relation of the carrier concentration of the prepared graded junction along with the change of the thickness is better, the quality of the formed graded junction is more stable, the defects of crystal points in the graded junction are less, the quality of the graded junction is stable, the thickness control precision is high, and the control can be controlled within +/-0.1 mu m.
Drawings
FIG. 1 is a graph of the doping effect of the SIMS test of example 4;
Detailed Description
For the understanding of those skilled in the art, the present invention will be further described with reference to the following examples and the accompanying fig. 1, and the description of the embodiments is not intended to limit the present invention.
Example 1
A preparation method of a gradient PN junction material comprises the following steps:
setting the growth condition of LPCVD chemical vapor deposition method to delay the change layer;
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials;
(2) setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating the maximum flow rate c and the minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1);
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce within the growth time e, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished.
In this embodiment, a double-side polished N-type silicon carbide substrate with a thickness of 350 μm and a deflection angle of 4 degrees was used as the outer retardation layer.
The growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is trichlorosilane, the carbon growth source is ethylene, and the doping source is trimethylaluminum.
Wherein the carbon-silicon ratio of the growth gas is 1.1:1, the flow rate of the carrier gas is 120L/min, the temperature of the reaction chamber is 1650 ℃, and the pressure of the reaction chamber is 100 mbar.
Wherein the maximum value a and the minimum value b of the change of the carrier concentration are respectively 2 x 1019And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the desired doping source are 0.35g and 0.017g, respectively.
Wherein the thickness of the slow-changing layer is 1 μm, the growth rate is 0.15 μm/min, and the growth time e is 6.6 min.
Example 2
A preparation method of a gradient PN junction material comprises the following steps:
setting the growth condition of LPCVD chemical vapor deposition method to delay the change layer;
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials;
(2) setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating the maximum flow rate c and the minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1);
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce within the growth time e, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished.
In this embodiment, a double-side polished N-type silicon carbide substrate with a thickness of 340 μm and a deflection angle of 8 degrees was used as the outer retardation layer.
The growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is trichlorosilane, the carbon growth source is ethylene, and the doping source is trimethylaluminum.
Wherein the carbon-silicon ratio of the growth gas is 0.7:1, the flow rate of the carrier gas is 80L/min, the temperature of the reaction chamber is 1550 ℃, and the pressure of the reaction chamber is 120 mbar.
Wherein the thickness of the slow-changing layer is 0.5 μm.
Example 3
A preparation method of a gradient PN junction material comprises the following steps:
setting the growth condition of LPCVD chemical vapor deposition method to delay the change layer;
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials;
(2) setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating the maximum flow rate c and the minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1);
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce within the growth time e, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished.
In this embodiment, a double-side polished N-type silicon carbide substrate with a thickness of 360 μm and a deflection angle of 4 degrees is used as the outer retardation layer.
The growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is trichlorosilane, the carbon growth source is ethylene, and the doping source is trimethylaluminum.
Wherein the carbon-silicon ratio of the growth gas is 1.3:1, the flow rate of the carrier gas is 150L/min, the temperature of the reaction chamber is 1700 ℃, and the pressure of the reaction chamber is 80 mbar.
Wherein the thickness of the slow-changing layer is 1 μm.
Example 4
This example continues the deposition of an N-type graded layer on the basis of example 1.
The preparation method of the N-type graded layer comprises the following steps:
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials;
(2) setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating the maximum flow rate c and the minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1);
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the mass of the doping source to gradually reduce within the growth time e, and controlling the mass of the doping source to be the minimum flow rate d when the growth time e is finished.
The carbon-silicon ratio of the growth gas is 1.1:1, the flow rate of the carrier gas is 120L/min, the temperature of the reaction chamber is 1650 ℃, and the pressure of the reaction chamber is 100 mbar.
The maximum value a and the minimum value b of the change of the carrier concentration are respectively 5 × 1018And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the required dopant source are 100sccm/min and 20sccm/min, respectively.
The thickness of the slow-changing layer is 2 mu m, the growth rate is 0.15 mu m/min, and the growth time e is 13.4 min.
The above-described embodiments are preferred implementations of the present invention, and the present invention may be implemented in other ways without departing from the spirit of the present invention.
Claims (9)
1. A preparation method of a gradual change type PN junction material is characterized by comprising the following steps: the method comprises the following steps:
setting the growth condition of LPCVD chemical vapor deposition method to delay the change layer;
the growth conditions were set by the following method:
(1) setting the carbon-silicon ratio of growth gas, the flow rate of carrier gas and the temperature and pressure of the reaction chamber according to the requirements of required device materials;
(2) setting a maximum value a and a minimum value b of carrier concentration change of the graded layer according to the requirements of the required device material, and testing and calculating a maximum flow rate c and a minimum flow rate d of the required doping source corresponding to the maximum value a and the minimum value b according to the growth conditions set in the step (1), wherein the flow rates are mass flow rates or volume flow rates;
(3) testing and calculating the growth rate of the slowly-changing layer according to the growth conditions set in the step (1), setting the thickness of the slowly-changing layer according to the requirements of the required device material, and calculating the growth time e according to the thickness and the growth rate of the slowly-changing layer;
(4) and after the growth gas and the carrier gas are introduced, introducing the doping source with the maximum flow rate c, then controlling the introduction quality of the doping source to gradually reduce within the growth time e, and controlling the introduction quality of the doping source to be the minimum flow rate d when the growth time e is finished.
2. The method of claim 1, wherein the step of forming the graded PN junction material comprises: the growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is silane or trichlorosilane, the carbon growth source is ethylene or propane, and the doping source is trimethylaluminum.
3. The method of claim 2, wherein the step of forming the graded PN junction material comprises: the carbon-silicon ratio of the growth gas is 0.7-1.3:1, the flow rate of the carrier gas is 80-150L/min, the temperature of the reaction chamber is 1550-.
4. The method of claim 3, wherein the step of forming the graded PN junction material comprises: the maximum value a and the minimum value b of the change of the carrier concentration are respectively 2 x 1019And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the desired dopant source are 0.35g/min and 0.017g/min, respectively.
5. The method of claim 3, wherein the step of forming the graded PN junction material comprises: the thickness of the buffer layer is 1 μm.
6. The method of claim 1, wherein the step of forming the graded PN junction material comprises: the growth gas consists of a silicon growth source and a carbon growth source, the silicon growth source is silane or trichlorosilane, the carbon growth source is ethylene or propane, and the doping source is nitrogen.
7. The method of claim 6, wherein the step of forming the graded PN junction material comprises: the carbon-silicon ratio of the growth gas is 0.7-1.3:1, the flow rate of the carrier gas is 80-150L/min, the temperature of the reaction chamber is 1550-.
8. The method of claim 6, wherein the step of forming the graded PN junction material comprises: the maximum value a and the minimum value b of the change of the carrier concentration are respectively 5 × 1018And 1 x 1018The maximum flow rate c and the minimum flow rate d corresponding to the required dopant source are 100sccm/min and 20sccm/min, respectively.
9. The method of claim 6, wherein the step of forming the graded PN junction material comprises: the thickness of the buffer layer is 2 μm.
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| CN109449083A (en) * | 2018-10-24 | 2019-03-08 | 武汉新芯集成电路制造有限公司 | Graded transition junction, high tension apparatus and semiconductor devices and its manufacturing method |
| CN111029250A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | Method for realizing SiC epitaxial curve-shaped doping distribution |
| CN111029246A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | Method for reducing triangular defects in SiC epitaxial layer |
| CN111180527A (en) * | 2019-12-30 | 2020-05-19 | 深圳第三代半导体研究院 | GaN-based PN diode and preparation method thereof |
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