CN104807495B - 一种监测晶片生长薄膜特性的装置及其用途 - Google Patents
一种监测晶片生长薄膜特性的装置及其用途 Download PDFInfo
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- CN104807495B CN104807495B CN201410036443.6A CN201410036443A CN104807495B CN 104807495 B CN104807495 B CN 104807495B CN 201410036443 A CN201410036443 A CN 201410036443A CN 104807495 B CN104807495 B CN 104807495B
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 33
- 238000002310 reflectometry Methods 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims description 10
- 230000005457 Black-body radiation Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000009659 non-destructive testing Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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CN107611049B (zh) * | 2017-09-18 | 2019-10-01 | 佛山科学技术学院 | 一种基于实时光谱的外延片多参数原位监测方法和装置 |
CN113252205B (zh) * | 2021-04-07 | 2022-05-20 | 中山德华芯片技术有限公司 | 一种适用于晶格失配外延材料的rt探测器及其应用 |
Citations (9)
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CN87107260A (zh) * | 1986-12-04 | 1988-08-10 | 利比-欧文斯-福特公司 | 衬底上薄膜的特性监测设备 |
EP0708318A1 (en) * | 1994-10-17 | 1996-04-24 | International Business Machines Corporation | Radiance measurement by angular filtering for use in temperature determination of radiant object |
US6398406B1 (en) * | 2000-06-01 | 2002-06-04 | Sandia Corporation | Temperature determination using pyrometry |
CN102175711A (zh) * | 2011-01-11 | 2011-09-07 | 华中科技大学 | 一种热膨胀系数的测量方法及装置 |
CN102455222A (zh) * | 2010-10-21 | 2012-05-16 | 甘志银 | 金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置 |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
CN102866143A (zh) * | 2011-07-08 | 2013-01-09 | 光达光电设备科技(嘉兴)有限公司 | 外延材料层的特性测试装置 |
EP2546600A1 (en) * | 2011-07-11 | 2013-01-16 | LayTec AG | Method and apparatus for real-time determination of spherical and non-spherical curvature of a surface |
CN103003664A (zh) * | 2010-07-09 | 2013-03-27 | K-空间协会公司 | 应用于透明基底的薄膜的实时温度、光学带隙、膜厚度和表面粗糙度测量 |
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DE10061168C2 (de) * | 2000-11-30 | 2002-12-19 | Laytec Ges Fuer In Situ Und Na | Verfahren zur Messung von Kennwerten eines Schichtsystems während des Schichtaufbaus, insbesondere der Temperatur, insbesondere bei einem Halbleitersystem während der Epitaxie |
US7505150B2 (en) * | 2005-05-13 | 2009-03-17 | Laytec Gmbh | Device and method for the measurement of the curvature of a surface |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87107260A (zh) * | 1986-12-04 | 1988-08-10 | 利比-欧文斯-福特公司 | 衬底上薄膜的特性监测设备 |
EP0708318A1 (en) * | 1994-10-17 | 1996-04-24 | International Business Machines Corporation | Radiance measurement by angular filtering for use in temperature determination of radiant object |
US6398406B1 (en) * | 2000-06-01 | 2002-06-04 | Sandia Corporation | Temperature determination using pyrometry |
CN103003664A (zh) * | 2010-07-09 | 2013-03-27 | K-空间协会公司 | 应用于透明基底的薄膜的实时温度、光学带隙、膜厚度和表面粗糙度测量 |
CN102455222A (zh) * | 2010-10-21 | 2012-05-16 | 甘志银 | 金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置 |
CN102175711A (zh) * | 2011-01-11 | 2011-09-07 | 华中科技大学 | 一种热膨胀系数的测量方法及装置 |
CN102866143A (zh) * | 2011-07-08 | 2013-01-09 | 光达光电设备科技(嘉兴)有限公司 | 外延材料层的特性测试装置 |
EP2546600A1 (en) * | 2011-07-11 | 2013-01-16 | LayTec AG | Method and apparatus for real-time determination of spherical and non-spherical curvature of a surface |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
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