CN104796135A - Low-distortion spike suppression phase selector - Google Patents

Low-distortion spike suppression phase selector Download PDF

Info

Publication number
CN104796135A
CN104796135A CN201510196901.7A CN201510196901A CN104796135A CN 104796135 A CN104796135 A CN 104796135A CN 201510196901 A CN201510196901 A CN 201510196901A CN 104796135 A CN104796135 A CN 104796135A
Authority
CN
China
Prior art keywords
transistor
inverter
nand gate
connects
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510196901.7A
Other languages
Chinese (zh)
Other versions
CN104796135B (en
Inventor
李迪
朱樟明
杨银堂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN201510196901.7A priority Critical patent/CN104796135B/en
Publication of CN104796135A publication Critical patent/CN104796135A/en
Application granted granted Critical
Publication of CN104796135B publication Critical patent/CN104796135B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention relates to a low-distortion spike suppression phase selector comprising first and second resistive load differential amplifiers, first and second double-phase switch controllers and a clock signal generator used for spike suppression and complementary overlapping; the output end of the second resistive load differential amplifier is connected to the second double-phase switch controller; the positive and negative output signal ends of the first and second double-phase switch controllers are shorted and are connected to positive and negative ends of an output port VOUT; the clock signal generator is connected with the first and second double-phase switch controllers. The low-distortion spike suppression phase selector according to the technical scheme, the spike suppression and complementary overlapping clock signal generator is used to provide the switches with control signals, a delay phase inverter in the clock signal generator is used to overlap switch control signals which control the phases of output signals, the output signals of the selector are therefore smoothly transitional during phase conversion, and distortion performance and phase noise performance of a whole phase-locked loop is improved.

Description

A kind of low distortion peak restrained phase selector
Technical field
The present invention relates to signal handling equipment field, be specifically related to the implantation methods of a kind of vegetables.
Background technology
The four phase phase selectors used in previous phase-locked loop can provide the Selecting phasing of 0 °, 90 °, 180 ° and 270 °, according to digital controlled signal, its output signal carries out selecting and phase transition in 0 °, 90 °, 180 ° and 270 ° of four phase signal branch roads, thus completes required division function; The selection of phase place adopts switch to realize with conversion usually, but the moment of switch opens and turns off and can produce spike waveform, such as, at 0-T in phase transition place in the output signal 1in the moment, phase selector selects the input signal of 0 ° of phase place as output always, at T 2in the moment, phase selector selects the input signal of 90 ° of phase places as output, therefore, at T 2in the moment, signal phase will make to appear as spike waveform output signal from the conversion of 0 ° to 90 ° instantaneously, and these spike waveforms can be present in the output signal of whole phase-locked loop, thus affect distortion performance and the phase noise performance of whole phase-locked loop.
Summary of the invention
Object of the present invention is just to provide a kind of low distortion peak restrained phase selector, and it can effectively solve the problem, and the output signal of phase selector is shown as in phase transition process and seamlessly transits.
For achieving the above object, the present invention implements by the following technical solutions:
A kind of low distortion peak restrained phase selector, it is characterized in that: comprise first and second ohmic load differential amplifier, first and second Double-phase switch controller and for the complementary overlapping clock signal generator of peak restrained, the input of the first ohmic load differential amplifier connects signal input part VIN0, VIN180 of 0 °, 180 °, and the output of the first ohmic load differential amplifier connects the first Double-phase switch controller; The input of the second ohmic load differential amplifier connects signal input part VIN90, VIN270 of 90 °, 270 °, the output of the second ohmic load differential amplifier connects the second Double-phase switch controller, the positive and negative output signal end difference short circuit of first and second Double-phase switch controller also connects the positive and negative terminal of output port VOUT respectively, and clock signal generator is connected with first and second Double-phase switch controller respectively.
In technique scheme, by the complementary overlapping clock signal generator of employing peak restrained for phase selector switch provides control signal, in this clock signal generator, adopting delaying type inverter to make to control each switch controlling signal outputed signal mutually produces overlapping, thus the output signal of phase selector is shown as in phase transition process seamlessly transit, and then improve distortion performance and the phase noise performance of overall phase-locked loop.
Accompanying drawing explanation
Fig. 1 is structural principle block diagram of the present invention;
Fig. 2 be first and second ohmic load differential amplifier and first and second Double-phase switch controller realize schematic diagram;
Fig. 3 is the circuit structure schematic diagram of the complementary overlapping clock signal generator of peak restrained;
Fig. 4 is the circuit structure schematic diagram of inverter INV1, INV3, INV5, INV7;
Fig. 5 is the circuit structure schematic diagram of inverter INV2, INV4, INV6, INV8;
Fig. 6 is the circuit structure schematic diagram of NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1;
The switching circuit structure schematic diagram of Fig. 7 for using in Fig. 2.
Embodiment
In order to make objects and advantages of the present invention clearly understand, below in conjunction with embodiment, the present invention is specifically described.Should be appreciated that following word only in order to describe one or more concrete execution modes of the present invention, considered critical is not carried out to the protection range that the present invention specifically asks.
The technical scheme that the present invention takes as shown in Figure 1, a kind of low distortion peak restrained phase selector, comprise first and second ohmic load differential amplifier 31,32, first and second Double-phase switch controls, 21,22 and for the complementary overlapping clock signal generator 10 of peak restrained, the input of the first ohmic load differential amplifier 31 connects signal input part VIN0, VIN180 of 0 °, 180 °, and the output of the first ohmic load differential amplifier 31 connects the first Double-phase switch controller 21; The input of the second ohmic load differential amplifier 32 connects signal input part VIN90, VIN270 of 90 °, 270 °, the output of the second ohmic load differential amplifier 32 connects the second Double-phase switch controller 22, the positive and negative output signal end difference short circuit of first and second Double-phase switch controller also connects the positive and negative terminal of output port VOUT respectively, and clock signal generator 10 is connected with first and second Double-phase switch controller respectively.First Double-phase switch controller is 0 °/180 ° Double-phase switch controllers, and the second Double-phase switch controller is 90 °/270 ° Double-phase switch controllers.The complementary overlapping clock signal generator 10 of peak restrained is respectively 0 °/180 °, 90 °/270 ° Double-phase switch controllers provides control signal, input signal enters first and second ohmic load differential amplifier from VIN0, VIN90, VIN180, VIN270 port respectively and carries out pre-amplification, signal after amplification enters in first and second Double-phase switch controller respectively, the positive and negative output signal end short circuit respectively of the positive and negative output signal end of 0 °/180 ° of Double-phase switch controllers and 90 °/270 ° of Double-phase switch controllers, and connect the positive and negative port of output port VOUT.The present invention is on the basis of traditional four phase phase selectors, the complementary overlapping clock signal generator 10 of peak restrained is adopted to provide control signal for the switch of first and second Double-phase switch controller kind, by arranging the delay of control signal, the output signal of phase selector is shown as in phase transition process seamlessly transit, and unconventional spike waveform.
Concrete operations are:
First and second ohmic load differential amplifier and first and second Double-phase switch controller form the core circuit module of four phase phase selectors, and as shown in Figure 2, VIN0, VIN90, VIN180, VIN270 are four phase signals inputs to core circuit module; Supply voltage VDD divides one end of four tunnels difference contact resistance R1, R2, R3 and R4, the input of the other end connecting valve S1, S3 of resistance R1 and the drain electrode of transistor M1, the output of the other end connecting valve S2, S4 of resistance R2 and the drain electrode of transistor M2, the input of the other end connecting valve S5, S7 of resistance R3 and the drain electrode of transistor M3, the output of the other end connecting valve S6, S8 of resistance R4 and the drain electrode of transistor M4; The cathode output end of the output of switch S 1 input of connecting valve S2, the output of switch S 5, the input of switch S 6 and output VOUT respectively; The cathode output end of the output of switch S 3 input of connecting valve S4, the output of switch S 7, the input of switch S 8 and output VOUT respectively; Switch S 1 is identical with the control signal of S4, and switch S 2 is identical with the control signal of S3, and switch S 5 is identical with the control signal of S8, and switch S 6 is identical with the control signal of S7; Four phase signals input VIN0, VIN90, VIN180, VIN270 connect the grid of transistor M1, M3, M2 and M4 respectively; The source shorted of transistor M1, M2 also connects the input of current source I1, the output access ground GND of current source I 1; The source shorted of transistor M3, M4 also connects the input of current source I2, the output access ground GND of current source I2.
Fig. 3 is the circuit structure schematic diagram of clock signal generator 10, clock signal generator 10 comprises series connection successively and connects and composes the inverter INV2 of loop from beginning to end, NAND gate NAND1, inverter INV3, inverter INV4, NAND gate NAND2, inverter INV5, inverter INV6, NAND gate NAND3, inverter INV7, inverter INV8, NAND gate NAND4 and inverter INV1, the short circuit point connection control signal output terminals A 0 of NAND gate NAND4 and inverter INV1, the short circuit point connection control signal output terminals A 3 of NAND gate NAND1 and inverter INV3, the short circuit point connection control signal output terminals A 2 of NAND gate NAND2 and inverter INV5, the short circuit point connection control signal output terminals A 1 of NAND gate NAND3 and inverter INV7, control signal output terminals A 0, A3 is connected with the first Double-phase switch controller, control signal output terminals A 1, A2 is connected with the second Double-phase switch controller, concrete can be: control signal output terminals A 0 is for control chart 2 breaker in middle S1 and S4, control signal output terminals A 3, for control chart 2 breaker in middle S2 and S3, control signal output terminals A 2 is for control chart 2 breaker in middle S5 and S8, control signal output terminals A 1 is for control chart 2 breaker in middle S6 and S7.NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1 connect respectively the complementary overlap signal C0 of two-phase that external circuit provides, c1 and
The circuit structure of inverter INV1, INV3, INV5, INV7 is identical, Fig. 4 is the circuit structure schematic diagram of inverter INV1, INV3, INV5, INV7, inverter INV1 bag inverter input signal end VIN, inverter output signal end VOUT, transistor M5, M6, the source electrode of transistor M5, M6 connects power vd D, and the grid short circuit of transistor M5, M6 also connects input signal end VIN; The drain electrode short circuit of transistor M5, M6 also connects one end and the output signal end VOUT of load capacitance CL respectively; The source ground of transistor M6, the other end ground connection of load capacitance CL.
The circuit structure of inverter INV2, INV4, INV6, INV8 is identical, and Fig. 5 is the circuit structure schematic diagram of inverter INV2, INV4, INV6, INV8; VIN2 comprises inverter input signal end VIN, inverter output signal end VOUT, transistor M7, M8, M9; The source electrode of transistor M7 connects power vd D, and the grid short circuit of transistor M7, M9 also connects the input signal end VIN of inverter, and the drain electrode short circuit of transistor M7, M8 also connects the output signal end VOUT of inverter; The grid of transistor M8 connects the bias voltage input VB that external circuit provides, the source electrode of transistor M8 and the drain electrode short circuit of transistor M9, the source ground of transistor M9.
The circuit structure of NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1 is identical, Figure 6 shows that the circuit structure schematic diagram of NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1, NAND gate NAND1 comprises input signal end IN1, IN2 of NAND gate, the output signal end OUT of NAND gate and transistor M10, M12, M13, M14; The source electrode of transistor M10, M14 connects power vd D respectively, and the grid short circuit of transistor M10, M12 also connects input signal end IN1; The grid short circuit of transistor M11, M13 also connects input signal end IN2; The drain electrode of transistor M10 and the source shorted of transistor M11, the drain electrode short circuit of transistor M12, M13 also connects the drain electrode of transistor M11 and the grid of transistor M14, M15 respectively; The drain electrode short circuit of transistor M14, M15 also connects the output signal end OUT of NAND gate; The source grounding of transistor M12, M13, M15.
The switching circuit structure schematic diagram of Fig. 7 for using in Fig. 2; IN is switch input signal end, and OUT is switch output signal end, D and for switch controlling signal end, when D is digital signal " 1 ", during for digital signal " 0 ", switch conduction; When D is digital signal " 0 ", during for digital signal " 1 ", switch cuts out; The grid connection control signal end D of transistor M17, the source shorted of drain electrode and transistor M18, and connecting valve input signal end IN; The source electrode of transistor M17 and the drain electrode short circuit of transistor M18, and connecting valve output signal end OUT; The grid connection control signal end of transistor M18
In a word, the present invention can make the output signal of phase selector show as in phase transition process to seamlessly transit, avoid the distortion performance and the phase noise performance that appear as the whole phase-locked loop of spike waveform influence.
The above is only the preferred embodiment of the present invention; should be understood that; for those skilled in the art; to know in the present invention after contents; under the premise without departing from the principles of the invention; can also make some equal conversion to it and substitute, these convert on an equal basis and substitute and also should be considered as belonging to protection scope of the present invention.

Claims (5)

1. a low distortion peak restrained phase selector, it is characterized in that: comprise first and second ohmic load differential amplifier, first and second Double-phase switch controller and for the complementary overlapping clock signal generator of peak restrained, the input of the first ohmic load differential amplifier connects signal input part VIN0, VIN180 of 0 °, 180 °, and the output of the first ohmic load differential amplifier connects the first Double-phase switch controller; The input of the second ohmic load differential amplifier connects signal input part VIN90, VIN270 of 90 °, 270 °, the output of the second ohmic load differential amplifier connects the second Double-phase switch controller, the positive and negative output signal end difference short circuit of first and second Double-phase switch controller also connects the positive and negative terminal of output port VOUT respectively, and clock signal generator is connected with first and second Double-phase switch controller respectively.
2. low distortion peak restrained phase selector according to claim 1, is characterized in that: clock signal generator comprises series connection successively and connects and composes the inverter INV2 of loop from beginning to end, NAND gate NAND1, inverter INV3, inverter INV4, NAND gate NAND2, inverter INV5, inverter INV6, NAND gate NAND3, inverter INV7, inverter INV8, NAND gate NAND4 and inverter INV1, the short circuit point connection control signal output terminals A 0 of NAND gate NAND4 and inverter INV1, the short circuit point connection control signal output terminals A 3 of NAND gate NAND1 and inverter INV3, the short circuit point connection control signal output terminals A 2 of NAND gate NAND2 and inverter INV5, the short circuit point connection control signal output terminals A 1 of NAND gate NAND3 and inverter INV7, control signal output terminals A 0, A3 is connected with the first Double-phase switch controller, control signal output terminals A 1, A2 is connected with the second Double-phase switch controller, NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1 connects the complementary overlap signal C0 of two-phase that external circuit provides respectively, c1 and
3. low distortion peak restrained phase selector according to claim 2, it is characterized in that: the circuit structure of inverter INV1, INV3, INV5, INV7 is identical, inverter INV1 bag inverter input signal end VIN, inverter output signal end VOUT, transistor M5, M6, the source electrode of transistor M5, M6 connects power vd D, and the grid short circuit of transistor M5, M6 also connects input signal end VIN; The drain electrode short circuit of transistor M5, M6 also connects one end and the output signal end VOUT of load capacitance CL respectively; The source ground of transistor M6, the other end ground connection of load capacitance CL.
4. low distortion peak restrained phase selector according to claim 2, it is characterized in that: the circuit structure of inverter INV2, INV4, INV6, INV8 is identical, VIN2 comprises inverter input signal end VIN, inverter output signal end VOUT, transistor M7, M8, M9; The source electrode of transistor M7 connects power vd D, and the grid short circuit of transistor M7, M9 also connects the input signal end VIN of inverter, and the drain electrode short circuit of transistor M7, M8 also connects the output signal end VOUT of inverter; The grid of transistor M8 connects the bias voltage input VB that external circuit provides, the source electrode of transistor M8 and the drain electrode short circuit of transistor M9, the source ground of transistor M9.
5. low distortion peak restrained phase selector according to claim 2, it is characterized in that: the circuit structure of NAND gate NAND4, NAND gate NAND2, NAND gate NAND3, NAND gate NAND1 is identical, NAND gate NAND1 comprises input signal end IN1, IN2 of NAND gate, the output signal end OUT of NAND gate and transistor M10, M12, M13, M14; The source electrode of transistor M10, M14 connects power vd D respectively, and the grid short circuit of transistor M10, M12 also connects input signal end IN1; The grid short circuit of transistor M11, M13 also connects input signal end IN2; The drain electrode of transistor M10 and the source shorted of transistor M11, the drain electrode short circuit of transistor M12, M13 also connects the drain electrode of transistor M11 and the grid of transistor M14, M15 respectively; The drain electrode short circuit of transistor M14, M15 also connects the output signal end OUT of NAND gate; The source grounding of transistor M12, M13, M15.
CN201510196901.7A 2015-04-23 2015-04-23 A kind of low distortion peak restrained phase selector Expired - Fee Related CN104796135B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510196901.7A CN104796135B (en) 2015-04-23 2015-04-23 A kind of low distortion peak restrained phase selector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510196901.7A CN104796135B (en) 2015-04-23 2015-04-23 A kind of low distortion peak restrained phase selector

Publications (2)

Publication Number Publication Date
CN104796135A true CN104796135A (en) 2015-07-22
CN104796135B CN104796135B (en) 2017-12-26

Family

ID=53560692

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510196901.7A Expired - Fee Related CN104796135B (en) 2015-04-23 2015-04-23 A kind of low distortion peak restrained phase selector

Country Status (1)

Country Link
CN (1) CN104796135B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026991A (en) * 2016-05-06 2016-10-12 龙迅半导体(合肥)股份有限公司 Phase interpolator and control method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130147569A1 (en) * 2011-12-12 2013-06-13 Stephen Beccue RTWO-Based Pulse Width Modulator
CN103259535A (en) * 2012-02-15 2013-08-21 联咏科技股份有限公司 Delay phase locking return circuit and delay phase locking method
CN103780252A (en) * 2012-10-22 2014-05-07 联发科技股份有限公司 Clock generating apparatus, method for clock generating apparatus, and fractional frequency divider

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130147569A1 (en) * 2011-12-12 2013-06-13 Stephen Beccue RTWO-Based Pulse Width Modulator
CN103259535A (en) * 2012-02-15 2013-08-21 联咏科技股份有限公司 Delay phase locking return circuit and delay phase locking method
CN103780252A (en) * 2012-10-22 2014-05-07 联发科技股份有限公司 Clock generating apparatus, method for clock generating apparatus, and fractional frequency divider

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026991A (en) * 2016-05-06 2016-10-12 龙迅半导体(合肥)股份有限公司 Phase interpolator and control method thereof
CN106026991B (en) * 2016-05-06 2018-08-10 龙迅半导体(合肥)股份有限公司 A kind of phase interpolator and its control method

Also Published As

Publication number Publication date
CN104796135B (en) 2017-12-26

Similar Documents

Publication Publication Date Title
JP5101741B2 (en) Semiconductor device and inverter, converter and power conversion device using the same
CN103178852A (en) High-speed sampling front-end circuit
CN105403753B (en) A kind of Switching Power Supply primary inductance peak point current auxiliary sampling circuit
CN103795404A (en) Phase interpolator circuit and phase interpolation signal processing method
CN107707117A (en) A kind of charge pump sequential control circuit and charge pump circuit
CN103605397B (en) Voltage follower circuit
CN104796135A (en) Low-distortion spike suppression phase selector
CN104901681B (en) A kind of pressure-resistant CMOS of VDD 2VDD level shifting circuits
CN103944554A (en) Level switching circuit and digital-to-analog converter
CN103414329B (en) Voltage peak value locking circuit
CN101814900A (en) D-class audio amplifier and method for improving output nonlinearity thereof
CN102075177B (en) Method for producing non-overlapping signal with reasonable dead-zone time
CN105515552A (en) Clock generation circuit and double power supply system
CN104205650A (en) Inverter-and-switched-capacitor-based squelch detector apparatus and method
CN203588106U (en) Improved voltage following circuit
EP3490142A1 (en) Amplifier circuit having controllable output stage
CN103280775B (en) Insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit
CN103326700A (en) Bootstrap sampling switch circuit
CN202257345U (en) Low drop-out linear voltage regulator
CN101710799B (en) Main circuit of controllable current disturbing source
WO2016165451A1 (en) Fault protection method for phase-shifted full-bridge converter using isolation transformer gate drive
JP6185032B2 (en) Semiconductor device and inverter, converter and power conversion device using the same
CN107196509A (en) A kind of DC to DC converter and electronic equipment
CN103716035A (en) Signal selection circuit and secondary comparator including same
CN105991125A (en) Inverter circuit, stable-output dynamic comparator and comparison method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171226

Termination date: 20180423