CN104795363A - Copper-clad substrate with barrier structure and manufacturing method thereof - Google Patents
Copper-clad substrate with barrier structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104795363A CN104795363A CN201410022499.6A CN201410022499A CN104795363A CN 104795363 A CN104795363 A CN 104795363A CN 201410022499 A CN201410022499 A CN 201410022499A CN 104795363 A CN104795363 A CN 104795363A
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- China
- Prior art keywords
- chip
- supporting region
- barrier structure
- copper base
- substrate
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
A copper-clad substrate with a barrier structure comprises a plurality of bearing regions and a plurality of barrier regions. Each bearing region can be used for electrical connection between chips. Each barrier region is formed around each bearing region. The barrier regions of the invention can avoid the problem that after a tin flake forms liquid tin in a reflow oven, short circuit is caused as other signal lines are contacted.
Description
Technical field
The invention relates to a kind of substrate and manufacture method thereof, refer to a kind of bonded copper base and manufacture method thereof of tool barrier structure especially.
Background technology
In technical field of semiconductors, the conducting metal welding block that semiconductor chip is arranged with matrix kenel by majority with flip-chip form (Flip-Chip), as tin ball or tin sheet are electrically connected on substrate or printed circuit board (PCB).When chip is welded on substrate in flip-chip mode, substrate surface cloth is provided with a solder mask (Solder Mask), many conducting wires are buried underground under this solder mask, position corresponding to the welding of chip block tin is formed with the weld pad (Solder Pads) that exposes outside this solder mask to each conducting wire terminal, therefore, this block tin is corresponding with weld pad each on substrate weld and tie after, chip signal is by this block tin and intersperse among substrate top layer and the conducting wire running through substrate center's resin bed by perforation is sent to base plate bottom, then is electrically connected with external device (ED).
The substrate 1 of general weld pad form is as shown in Figure 1, for solder mask definition (Solder MaskDefined, SMD), the size of the opening 3 of this solder mask 2 is less than the size of the weld pad 5 be formed on the resin bed 4 of substrate 1, is covered by this solder mask 2 to make the periphery of this weld pad 5.And flip-chip encapsulation technology (Flip-chip Technology) forms a plurality of tin ball 8 in advance in the chip pad 7 of the action face of chip 6, again in action face mode down by this chip 6 reflow to substrate 1, and form the weldering knot joint comprising chip pad 7, tin ball 8 and substrate weld pad 5, the bottom gap of cloth one insulating cement material to chip 6 is filled, to strengthen the weld force of tin ball 8 more afterwards with bottom filler or mould pressing process; But when being applied in high power module with aforesaid encapsulation technology, the operating state due to high voltage and current makes it produce sizable heat energy, now namely the thermal diffusivity of chip and stability become the emphasis that must overcome.
As shown in Figure 2, industry is for overcoming this problem, one utilizes the arrange in pairs or groups technical scheme of reflow (Reflow) technique of tin sheet 9 to be then widely used, but because tin sheet 9 can convert liquid state to by solid-state in the process of reflow oven, now liquid tin then may flow to adjacent conducting wire via substrate 1 surface, so that the bridge joint short circuit caused between adjacent conductive tracks, and then chip 6 is damaged or disabler, press down or more manpower and materials need be spent to become originally to repair.
In sum, known substrate 1 structure and the encapsulation technology disappearance that still tool is above-mentioned and having much room for improvement.
Summary of the invention
The object of the present invention is to provide a kind of bonded copper base of tool barrier structure.
Another object of the present invention is the bonded copper base manufacture method providing a kind of tool barrier structure.
The present invention causes the problem of short circuit after tin sheet can be avoided in reflow oven to form liquid tin because contacting other signal line.
For achieving the above object, the bonded copper base of tool barrier structure provided by the invention, it includes a supporting region and a baffle area, and this supporting region can for a chip electric connection, this baffle area is formed at around this supporting region, to intercept this chip and this supporting region.
It also includes at least one conducting strip, and this at least one conducting strip is located between this chip and supporting region of this substrate, is electrically connected at this substrate for this chip.
The present invention also provides the bonded copper base of another kind of tool barrier structure, it includes a plurality of supporting region and a plurality of baffle area, respectively this supporting region can for each this chip electric connection, and respectively this baffle area is formed at respectively around this supporting region, to intercept respectively this chip and respectively this supporting region.
It also includes plural conductive sheet, and respectively this conducting strip is fixedly arranged between each this chip and the supporting region of each this substrate, is electrically connected at this substrate for each this chip.
Wherein the baffle area of this substrate is a groove.
Wherein the baffle area of this substrate is a barricade.
Wherein this substrate is formed by a ceramic layer and the copper clad layers that is formed at this ceramic layer upper and lower surface.
The bonded copper base manufacture method of tool barrier structure provided by the invention, it includes the following step: provide a substrate and define at least one supporting region and at least one baffle area be formed at around this at least one supporting region respectively; There is provided at least one chip in this at least one supporting region; And provide connection means between this at least one chip and this at least one supporting region, for the use of electric connection.
Wherein define this at least one baffle area to include and provide a light shield (Mask) and via after an exposure imaging technique, etching (Etching) forms the step of at least one groove.
Wherein define this at least one baffle area to include and provide a light shield (Mask) and to deposit the step that (Deposition) or sputter (Sputter) technique form at least one barricade.
The upper and lower surface that wherein this substrate is included in a ceramic layer forms the step of a copper clad layers respectively.
Wherein these connection means first provide at least one conducting strip between this at least one chip and this at least one supporting region, and through a reflow (Reflow) technique, this at least one chip is electrically connected at this at least one supporting region.
Thus, bonded copper base of the present invention can supply the smooth setting of this chip, and is beneficial to heat conduction, to promote the task performance of this chip, after also avoiding this tin sheet to form liquid tin in reflow oven by the technical characteristic of this baffle area, cause the problem of short circuit because contacting other signal line.
Accompanying drawing explanation
Fig. 1 is the profile of known substrate and encapsulating structure.
Fig. 2 is the profile of another known substrate and encapsulating structure.
The profile of the bonded copper base of the tool barrier structure that Fig. 3 provides for the present invention first preferred embodiment, main display baffle area is the structure of groove.
The profile of the bonded copper base of the tool barrier structure that Fig. 4 provides for this first preferred embodiment of the present invention, main display baffle area is the structure of barricade.
The vertical view of the bonded copper base of the tool barrier structure that Fig. 5 provides for the present invention second preferred embodiment, the position of each chip of main display and the distribution of each baffle area.
The profile of the bonded copper base of the tool barrier structure that Fig. 6 provides for this second preferred embodiment of the present invention, the aspect of main display groove between each chip.
The profile of the bonded copper base of the tool barrier structure that Fig. 7 provides for this second preferred embodiment of the present invention, the aspect of main display barricade between each chip.
The flow chart of the bonded copper base manufacture method of the tool barrier structure that Fig. 8 A-Fig. 8 D provides for this first, second preferred embodiment of the present invention, main display groove formed with exposure imaging technique after etching.
The flow chart of the bonded copper base manufacture method of the tool barrier structure that Fig. 9 A-Fig. 9 D provides for this first, second preferred embodiment of the present invention, main display barricade deposits or sputtering process formation.Symbol description in accompanying drawing:
1 substrate, 2 solder masks, 3 openings, 4 resin beds, 5 weld pads, 6 chips, 7 chip pad, 8 tin balls, 9 tin sheets, 10 bonded copper bases, 10 ' bonded copper base, 11 supporting regions, 13 baffle areas, 131 grooves, 133 barricades, 15 ceramic layers, 17 copper clad layers, 20 chips, 30 conducting sheets (tin sheet).
Embodiment
For formation of the present invention, feature and object thereof can be understood further, below for some embodiments of the present invention, and coordinate accompanying drawing to elaborate, allow those skilled in the art specifically implement simultaneously.Only the following stated; only in order to technology contents of the present invention and feature being described and the execution mode provided; all is that those skilled in the art are after understanding technology contents of the present invention and feature; with without prejudice under spirit of the present invention; the economization of all simple modification of doing, replacement or component, all should belong to the category that the invention is intended to protect.
Refer to shown in Fig. 3 and Fig. 4, for the bonded copper base 10 of the tool barrier structure that this first preferred embodiment of the present invention provides, it includes supporting region 11 and a baffle area 13, this supporting region 11 can be arranged for a chip 20 and electric connection, this baffle area 13 is formed at this supporting region 11 around, in order to this chip 20 and this supporting region 11 to be intercepted with its periphery.In this first preferred embodiment of the present invention, be electrically connected as it with at least one conducting strip 30 between this chip 20 and supporting region 11 of this bonded copper base 10, this at least one conducting strip 30 is better with tin sheet in reality is implemented, this baffle area 13 then can be formed as groove 131 structure according to different process requirements or be barricade 133 structure, with this, this at least one tin sheet 30 not only flatly can be arranged on this bonded copper base 10 for this chip 20, also prevent this at least one tin sheet 30 after liquid state by this baffle area 13 structure that is groove 131 or barricade 133, and flow through or contact other signal line and cause the problem of short circuit.
Referring again to shown in Fig. 5 to Fig. 7, for the bonded copper base 10' of the tool barrier structure of the present invention one second preferred embodiment, it includes this supporting region 11 of a plurality of mutual vicinity and a plurality of this baffle area 13 be formed at around each this supporting region 11, respectively this supporting region 11 and be respectively be used as use that is affixed and electric connection with a plurality of tin sheet 30 between this chip 20, respectively the structure of this baffle area 13 is identical with this first preferred embodiment, can be this groove 131 or this barricade 133 according to different process requirements, in order to intercept respectively this chip 20 adjacent one another are or respectively this supporting region 11 adjacent one another are, after forming liquid tin to avoid this tin sheet 30 in reflow oven, the problem of short circuit is caused because contacting other signal line.
It is worth mentioning that, as can be seen from figures 8 and 9, the bonded copper base 10 of the tool barrier structure of this first, second better enforcement, 10' are formed by a ceramic layer 15 and the copper clad layers 17 that is formed at this ceramic layer 15 upper and lower surface, it has good heat conductivility and conductivity, to overcome the problem of increasing the caused high heat energy of power consumption in wiring width fine and closely wovenization, unit are, more therefore the use of respectively this chip 20 heat radiation is provided effectively, formed to avoid spare part and lost efficacy.
Refer to shown in Fig. 8 A-Fig. 8 D again, be a kind of bonded copper base 10 of tool barrier structure provided by the invention, the manufacture method of 10', it includes the following step:
Steps A: form this copper clad layers 17 respectively in the upper and lower surface of this ceramic layer 15, to form this bonded copper base 10,10'.
Step B: utilize light shield (Mask) to define this bonded copper base 10, the supporting region 11 of 10' and baffle area 13, then via after exposure imaging technique, formed around the groove 131 around this supporting region 11 to etch (Etching).
Step C: provide this tin sheet 30 between this chip 20 and this supporting region 11, for the use of electric connection.
Step D: provide this chip 20 to be located at this tin sheet 30 and be positioned at above this supporting region 11, and utilize connection means to be electrically connected by the supporting region 11 of this chip 20, this tin sheet 30 and this bonded copper base 10,10', wherein this connection means system will be located at this tin sheet 30 between this chip 20 and this supporting region 11, through a reflow (Reflow) technique, this chip 20 can be electrically connected with this supporting region 11 of this bonded copper base 10,10'.
Refer to shown in Fig. 9 A-Fig. 9 D again, be the bonded copper base 10 of another kind of tool barrier structure provided by the invention, the manufacture method of 10', it includes the following step:
Steps A: form this copper clad layers 17 respectively in the upper and lower surface of this ceramic layer 15, to form this bonded copper base 10,10'.
Step B: utilize light shield (Mask) to define this bonded copper base 10, the supporting region 11 of 10' and baffle area 13, is then formed around the barricade 133 around this supporting region 11 via deposition (Deposition) or sputter (Sputter) technique.
Step C: provide this tin sheet 30 between this chip 20 and this supporting region 11, for the use of electric connection.
Step D: provide this chip 20 to be located at this tin sheet 30 and be positioned at above this supporting region 11, and utilize connection means to be electrically connected by the supporting region 11 of this chip 20, this tin sheet 30 and this bonded copper base 10,10', wherein these connection means to be located at this tin sheet 30 between this chip 20 and this supporting region 11, through a reflow (Reflow) technique, this chip 20 can be electrically connected with this supporting region 11 of this bonded copper base 10,10'.
Thus, no matter bonded copper base 10, the 10' of the first preferred embodiment of the present invention or the second preferred embodiment, it all can provide this chip 20 smooth setting, and by the structure of this ceramic layer 15 and this copper clad layers 17 preferably heat conduction and radiating effect, to promote the task performance of this chip 20, also can utilize this baffle area 13 be the technical characteristic of this groove 131 or this barricade 133 to after avoiding this tin sheet 30 to form liquid tin in reflow oven, cause the problem of short circuit because contacting other signal line.
The constituent components that the present invention discloses in previous embodiment, is only and illustrates, is not used for limiting the scope of the invention, and substituting or change of other equivalent elements, the right that also should be the present patent application contained.
Claims (12)
1. a bonded copper base for tool barrier structure, it includes a supporting region and a baffle area, and this supporting region can for a chip electric connection, and this baffle area is formed at around this supporting region.
2. have the bonded copper base of barrier structure according to claim 1, wherein, include at least one conducting strip, this at least one conducting strip is located between this chip and supporting region of this substrate, is electrically connected at this substrate for this chip.
3. a bonded copper base for tool barrier structure, it includes a plurality of supporting region and a plurality of baffle area, and respectively this supporting region can for each this chip electric connection, and respectively this baffle area is formed at respectively around this supporting region, to intercept respectively this supporting region.
4. have the bonded copper base of barrier structure according to claim 3, wherein, include plural conductive sheet, respectively this conducting strip is fixedly arranged between each this chip and the supporting region of each this substrate, is electrically connected at this substrate for each this chip.
5. the bonded copper base of tool barrier structure according to claim 1 or 3, wherein, the baffle area of this substrate is a groove.
6. the bonded copper base of tool barrier structure according to claim 1 or 3, wherein, the baffle area of this substrate is a barricade.
7. the bonded copper base of tool barrier structure according to claim 1 or 3, wherein, this substrate is formed by a ceramic layer and the copper clad layers that is formed at this ceramic layer upper and lower surface.
8. a manufacture method for the bonded copper base of tool barrier structure, includes the following step:
One substrate is provided and defines at least one supporting region and at least one baffle area be formed at around this at least one supporting region respectively;
There is provided at least one chip in this at least one supporting region; And
There is provided connection means between this at least one chip and this at least one supporting region, for the use of electric connection.
9. have the manufacture method of bonded copper base of barrier structure according to claim 8, wherein, define this at least one baffle area and include and provide a light shield and via after an exposure imaging technique, etching forms the step of at least one groove.
10. have the manufacture method of bonded copper base of barrier structure according to claim 8, wherein, define this at least one baffle area and include and provide a light shield and the step forming at least one barricade with deposition or sputtering process.
11. manufacture methods of bonded copper base of having barrier structure according to claim 8, wherein, the upper and lower surface that this substrate is included in a ceramic layer forms the step of a copper clad layers respectively.
12. manufacture methods of bonded copper base of having barrier structure according to claim 8, wherein, these connection means first provide at least one conducting strip between this at least one chip and this at least one supporting region, and through a reflow process, this at least one chip is electrically connected at this at least one supporting region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022499.6A CN104795363A (en) | 2014-01-17 | 2014-01-17 | Copper-clad substrate with barrier structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022499.6A CN104795363A (en) | 2014-01-17 | 2014-01-17 | Copper-clad substrate with barrier structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104795363A true CN104795363A (en) | 2015-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410022499.6A Pending CN104795363A (en) | 2014-01-17 | 2014-01-17 | Copper-clad substrate with barrier structure and manufacturing method thereof |
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| CN (1) | CN104795363A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355575A (en) * | 2015-11-17 | 2016-02-24 | 常州市武进区半导体照明应用技术研究院 | Method for protecting welding spots against pollution in semiconductor packaging process |
| CN110164784A (en) * | 2018-02-15 | 2019-08-23 | 美光科技公司 | The method and apparatus of conducting element for reflow semiconductor device |
| CN111665640A (en) * | 2019-03-08 | 2020-09-15 | 三赢科技（深圳）有限公司 | Structured light projection module and electronic device thereof |
| US11967576B2 (en) | 2021-07-08 | 2024-04-23 | Micron Technology, Inc. | Systems for thermally treating conductive elements on semiconductor and wafer structures |
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| TWI292296B (en) * | 2006-01-27 | 2008-01-01 | Au Optronics Corp | The fpc having next door to pads can prevent a short circuit |
| CN103094232A (en) * | 2011-11-02 | 2013-05-08 | 南茂科技股份有限公司 | Chip packaging structure |
| CN203205408U (en) * | 2013-03-12 | 2013-09-18 | 比亚迪股份有限公司 | Power integrated module |
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Patent Citations (5)
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| TWI242818B (en) * | 2004-12-10 | 2005-11-01 | Advanced Semiconductor Eng | Process of mounting a passive component |
| TW200709373A (en) * | 2005-08-19 | 2007-03-01 | Chipmos Technologies Inc | Flip-chip-on-film package structure capable of preventing sealing material from overflowing |
| TWI292296B (en) * | 2006-01-27 | 2008-01-01 | Au Optronics Corp | The fpc having next door to pads can prevent a short circuit |
| CN103094232A (en) * | 2011-11-02 | 2013-05-08 | 南茂科技股份有限公司 | Chip packaging structure |
| CN203205408U (en) * | 2013-03-12 | 2013-09-18 | 比亚迪股份有限公司 | Power integrated module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355575A (en) * | 2015-11-17 | 2016-02-24 | 常州市武进区半导体照明应用技术研究院 | Method for protecting welding spots against pollution in semiconductor packaging process |
| CN110164784A (en) * | 2018-02-15 | 2019-08-23 | 美光科技公司 | The method and apparatus of conducting element for reflow semiconductor device |
| CN111665640A (en) * | 2019-03-08 | 2020-09-15 | 三赢科技（深圳）有限公司 | Structured light projection module and electronic device thereof |
| US11967576B2 (en) | 2021-07-08 | 2024-04-23 | Micron Technology, Inc. | Systems for thermally treating conductive elements on semiconductor and wafer structures |
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Application publication date: 20150722 |
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