CN104792363B - A kind of Multifunction Sensor based on carborundum films structure and preparation method thereof - Google Patents
A kind of Multifunction Sensor based on carborundum films structure and preparation method thereof Download PDFInfo
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- CN104792363B CN104792363B CN201510173593.6A CN201510173593A CN104792363B CN 104792363 B CN104792363 B CN 104792363B CN 201510173593 A CN201510173593 A CN 201510173593A CN 104792363 B CN104792363 B CN 104792363B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 98
- 238000002360 preparation method Methods 0.000 title claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 115
- 239000010703 silicon Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 55
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 52
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 27
- 229910052737 gold Inorganic materials 0.000 claims abstract description 27
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 26
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 5
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910000521 B alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The present invention relates to a kind of Multifunction Sensor based on carborundum films structure, it includes silicon fiml (1), silicon substrate (2), carborundum films (3) and platinum resistor, wherein carborundum films (3) are sealed in a vacuum chamber by silicon fiml (1) and silicon substrate (2), carborundum films (3) are supported by four folded beams (6), the upper and lower surface of carborundum films (3) respectively prepares one layer of gold electrode, it is characterised in that：The upper gold electrode of carborundum films (3) and electric capacity in silicon fiml (1) formation, the lower gold electrode of carborundum films (3) and the lower electric capacity of silicon substrate (2) formation, the capacitance measurement circuit using electric capacity up and down as capacitor is additionally provided with inside the Multifunction Sensor based on carborundum films structure, temperature sensor (5) is provided with the Support Position of silicon fiml (1).Multifunction Sensor of the present invention, not only principle is simple, and cost is relatively low, and what is more important is measured while can realizing temperature, pressure, three kinds of environment parameters of vibration.
Description
Technical field
The present invention relates to Multifunction Sensor field of measuring technique, and in particular to a kind of pressure based on carborundum films structure
The Multifunction Sensor of power, vibration and temperature.
Background technology
The development of current industrial is increasing to the demand of resistant to elevated temperatures pressure, vibrating sensor.Common silicon device is difficult to
Reliably working in environment more than 200 DEG C.Silicon carbide device has high-melting-point, preferable heat endurance, can bear high temperature, be
The ideal material of high-temperature device.
In the equipment such as oil gas production equipment, steam turbine, coal-burning boiler, temperature, pressure and vibration are three and weighed very much
The ambient parameter wanted.Above-mentioned parameter is real-time and accurately grasped to have great importance to production efficiency, safety in production.It is existing to pass
Sensor can only measure wherein some parameter mostly, need three sensors to obtain three parameters, it is understood that there may be place sensing
Not enough, sensor can only obtain the data of position in the space of device, if ambient parameter spatially has larger gradient and become
Change, then bring certain error.
The content of the invention
In order to solve the technical problem of above-mentioned appearance, the present invention provides a kind of multi-functional biography based on carborundum films structure
Sensor, it includes silicon fiml, silicon substrate, carborundum films and platinum resistor, and wherein carborundum films (are sealed in one by silicon fiml and silicon substrate
In individual vacuum chamber, carborundum films are supported by four folded beams, and the upper and lower surface of carborundum films respectively prepares one layer of gold electrode, carbon
The upper gold electrode of SiClx film forms electric capacity with silicon fiml, and lower gold electrode and the silicon substrate of carborundum films form lower electric capacity, in base
Capacitance measurement circuit is additionally provided with inside the Multifunction Sensor of carborundum films structure, is set at the Support Position of silicon fiml (1)
There is temperature sensor.
Preferably, the Multifunction Sensor is operated under closed loop mode：When silicon fiml no pressure is without friction, carborundum
Film is located at the centre position of silicon fiml and silicon substrate；When silicon fiml is by ambient pressure, when being bent downwardly, silicon fiml and carborundum films it
Between distance reduce cause electric capacity increase and lower electric capacity is constant, capacitance measurement circuit detect both capacitance difference change, to silicon
Apply voltage between base and the lower gold electrode of carborundum films, force carborundum films to produce displacement, change itself and silicon fiml, silicon substrate
Position so that power-on and power-off unit weight is newly equal, wherein, capacitance measurement circuit apply voltage with silicon fiml pressure increase and
Increase, therefore the size of measurement voltage can obtain pressure value.
Preferably, when the Multifunction Sensor runs into the vibration of vertical direction, the upper-lower position hair of carborundum films
Changing, and silicon fiml position is constant, each opposite change occurs for electric capacity up and down, thus identification vibration or pressure.
Preferably, the capacitance measurement circuit is preferably RC oscillating circuits, changes the frequency values of square wave by capacitance variations,
Capacitance is worth to by measuring its frequency.
Preferably, four folded beams form a kind of carbonization of band elasticity for a kind of band in micro- bushing loop configuration pattern
Silicon thin film.
Preferably, carborundum films are obtained using chemical vapor deposition (CVD) process deposits.
Preferably, the carborundum films are the β phase silicon carbide films with cubic structure, and resistivity is more than 105
Ω·cm。
Preferably, the silicon fiml is polysilicon, and the tangential of the silicon substrate has 100,111,110,001.
Preferably, thermal evaporation and magnetron sputtering technique can be used to prepare for the gold electrode.
Preferably, temperature sensor is provided with the Support Position of silicon fiml.
A kind of preparation method for making any of the above-described kind of Multifunction Sensor of the present invention, its step is as follows：
(1) one layer of golden film is prepared using magnetron sputtering on one piece of silicon substrate (2) surface, then using chemical vapor deposition
(CVD) one layer of β phase silicon carbides film (3) is deposited, magnetron sputtering is reused and prepares one layer of golden film；One is prepared using photoetching process
The bushing pattern of polymerized photoresist；Gold, carborundum, gold are sequentially etched using plasma etching industrial, carborundum is obtained micro-
Structure plan；Using the silicon substrate below plasma etching industrial etching silicon carbide, 12 μm of etching depth obtains silicon substrate (2) and carbon
SiClx film (3)；
(2) photoresist that one layer of 1 μ m-thick is deposited on another piece of silicon substrate (2) surface using spin coating proceeding uses exposure imaging skill
Art, removes the photoresist of subregion, obtains the shape of platinum line image, in the shaped exterior, device surface is photo-etched
Glue is covered, and is exposed in shaped interior device surface；Device upper surface is covered using bushing, where only exposing the pattern
Region；It is thin in the platinum of shaped exterior using magnetron sputtering technique in platinum film thick one layer of 100nm of the area deposition not being blanked
Film is deposited on a photoresist, and device surface is deposited in the platinum film of shaped interior；Device is immersed in chloroform
20min, photoresist is dissolved by chloroform, and the platinum film on photoresist surface comes off, and only remains the platinum of shaped interior, so that
To platinum line image；Using ultrasonic wire bonding technique, 50 μm of silico-aluminum wire bond of diameter is connected on line image two ends
Electrode on, then the other end of B alloy wire is welded on external circuit, prepared by temperature sensor completes；
(3) 10 μm of polysilicon membrane will be deposited in the one side of silicon substrate made from step 2 (2)；Light is used on another side
Carving technology, prepares mask, a part of region on silicon substrate (2) surface is exposed, other regions are blanked；Then plasma quarter is carried out
Erosion, the region that silicon substrate (2) is exposed is etched completely away, exposes the polysilicon membrane of another side, obtain silicon fiml (1)；
(4) under vacuum, silicon substrate (2) and silicon fiml made from carborundum films (3) and step 3 is made in step one
(1) it is bonded, eutectic bonding, electrostatic bonding, Direct Bonding or weldering burning are bonded together, is obtained using gold silicon eutectic with silicon substrate (2)
Integral device.
Multifunction Sensor of the present invention, not only principle is simple, and cost is relatively low, and what is more important can realize temperature
Measured while degree, pressure, three kinds of environment parameters of vibration.
Brief description of the drawings
Fig. 1 is a kind of structure chart of Multifunction Sensor based on carborundum films structure of the present invention；
Fig. 2 is a kind of pressure measxurement signal of Multifunction Sensor based on carborundum films structure of the present invention
Figure；
Fig. 3 is a kind of acceleration analysis signal of Multifunction Sensor based on carborundum films structure of the present invention
Figure；
Fig. 4 is a kind of RC oscillating circuit electric capacity of Multifunction Sensor based on carborundum films structure of the present invention
Measuring circuit；
Fig. 5 is that carbonization silicon microstructure shows in a kind of Multifunction Sensor based on carborundum films structure of the present invention
It is intended to.
It is designated in figure：1 silicon fiml, 2 silicon substrates, 3 carborundum films, gold electrode on 41,42 times gold electrodes, 5 temperature sensors,
6 folded beam
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
As shown in figure 1, this embodiment offers a kind of Multifunction Sensor based on carborundum films structure, it includes silicon
Film 1, silicon substrate 2, carborundum films 3 and platinum resistor, wherein carborundum films 3 are sealed in a vacuum chamber by silicon fiml 1 and silicon substrate 2
Interior, carborundum films 3 are supported by four folded beams 6, and the upper and lower surface of carborundum films 3 respectively prepares one layer of gold electrode.Carborundum
The upper gold electrode 41 of film and the upper electric capacity of the formation of silicon fiml 1, lower gold electrode 42 and the lower electric capacity of the formation of silicon substrate 2 of carborundum films.
Temperature sensor 5 is provided with the Support Position of silicon fiml 1.In addition, inside the Multifunction Sensor based on carborundum films structure
It is additionally provided with capacitance measurement circuit.Wherein, the silicon fiml 1 is polysilicon, and the silicon substrate 2 is selectable tangentially to have 100,111,110,
001, thermal evaporation, magnetron sputtering technique can be used to prepare for the gold electrode up and down, the silicon fiml 1, silicon substrate 2 and carborundum films 3
It is bonded using gold silicon eutectic, eutectic bonding, electrostatic bonding, Direct Bonding or weldering burn bonding.
The size of vacuum chamber is without special requirement, and size can be from 100 × 100mm2 to 0.1 × 0.1mm2.
Carborundum films 3 in the present embodiment are obtained, carborundum therein using chemical vapor deposition (CVD) process deposits
Micro-structural is that carborundum films 3 are processed and obtained using semiconductor lithography process and plasma etching industrial, as shown in figure 5, its
Four folded beams 6 form a kind of carborundum films of band elasticity for a kind of band in micro- bushing loop configuration pattern.
The carborundum films 3 are the β phase silicon carbide films with cubic structure, and resistivity is more than 105Ω·cm。
As shown in Figure 2,3, the working sensor in the present embodiment is under closed loop mode：When the no pressure of silicon fiml 1 is without friction,
Carborundum films 3 are located at a state representations in silicon fiml 1 and the centre position of silicon substrate 2, such as Fig. 2 or Fig. 3；When silicon fiml 1 is by the external world
Pressure, when being bent downwardly, b state representations in such as Fig. 2, distance, which reduces, between silicon fiml 1 and carborundum films 3 causes electric capacity to increase
And lower electric capacity is constant, capacitance measurement circuit detects the change of both capacitance difference, to silicon substrate 2 and the lower gold electricity of carborundum films 3
Apply some voltage between pole, force carborundum films 3 to produce displacement, change itself and silicon fiml 1, the position of silicon substrate 2 so that on
Lower electric capacity is again equal, the c state representations in such as Fig. 2.Wherein, the voltage that capacitance measurement circuit applies is as silicon fiml 1 is pressurized
Power increases and increased, therefore the size of measurement voltage can obtain pressure value.
When sensor runs into the vibration of vertical direction, the upper-lower position of carborundum films 3 changes, and the position of silicon fiml 1
Constant, each opposite change occurs for electric capacity up and down, thus identification vibration or pressure.
The working method of sensor in the present embodiment is exemplified below：
Pressure measurement mode：When no pressure is without friction, carborundum films 3 are located at silicon fiml 1 and the centre position of silicon substrate 2, with
Silicon fiml 1 and the surface of silicon substrate 2 are respectively spaced 12um；When silicon fiml 1 is by extraneous 100kPa pressure, it is bent downwardly, silicon fiml 1 and carborundum are thin
Film 3 apart from reduce 1 μm, cause electric capacity increase 1pF and lower electric capacity is constant, capacitance measurement circuit detect both capacitance difference change
Change, using PLD algorithms, finally to applying 13.4V voltages between silicon substrate 2 and the lower gold electrode of carborundum films, force carborundum
Film 3 produces downward 0.5 μm of displacement so that power-on and power-off unit weight is newly equal.Capacitance measurement circuit is according to the size of voltage
Obtain pressure value.
Vibration measurement pattern：When sensor runs into vertical direction 2000g vibration, the upper-lower position hair of carborundum films 3
Raw 2 μm change, and the vibration of silicon fiml 1 is only 0.01 μm, be can be neglected, each opposite change occurs for electric capacity up and down, becomes
Change amplitude is 2pF, thus identifies and vibrates and calculate vibration acceleration.
RC oscillating circuits can be used in above-mentioned capacitance measurement circuit, and the square-wave signal of RC oscillating circuits output can be long without distortion
Distance Transmission.Capacitance variations change the frequency values of square wave, and capacitance is worth to by measuring its frequency.
The example of RC oscillating circuits is provided herein, as shown in Figure 4：The electric capacity up and down of sensor is used as capacitor, difference
It is placed in a RC oscillating circuit, electric capacity is in the alternate cycles state of " recharge-discharge " when circuit works, and capacitance voltage is therefore
Alternate cycles state in " increase-reduction ".When capacitance voltage is more than certain value, circuit output end output high level, when
When capacitance voltage is less than certain value, circuit output end output low level, therefore obtain square wave.The frequency of square wave is electric capacity charge and discharge
The frequency of electricity, it is relevant with capacitance.Square wave frequency is read by frequency counter.The relative displacement above and below carborundum films generation
When, relative change occurs for the capacitance of electric capacity and corresponding square wave frequency up and down.When electric capacity is identical up and down, both frequencies are identical.
Capacitance difference is not bigger up and down, and the difference between frequency is bigger.Frequency counter can be that instrument or single-chip microcomputer etc. are embedded
The One function module of formula system.Use to subtract each other both after single-chip microcomputer, reading two-way square wave frequency more in engineer applied and produce
To difference on the frequency, meet, known by frequency values than size.
The above-mentioned Multifunction Sensor based on carborundum films structure involved by the present embodiment, its manufacturing process is as follows：
(1) one layer of golden film is prepared using magnetron sputtering on one piece of silicon substrate (2) surface, then using chemical vapor deposition
(CVD) one layer of β phase silicon carbides film (3) is deposited, magnetron sputtering is reused and prepares one layer of golden film；One is prepared using photoetching process
The bushing pattern of polymerized photoresist；Gold, carborundum, gold are sequentially etched using plasma etching industrial, carborundum is obtained micro-
Structure plan；Using the silicon substrate below plasma etching industrial etching silicon carbide, 12 μm of etching depth obtains silicon substrate (2) and carbon
SiClx film (3)；
(2) photoresist that one layer of 1 μ m-thick is deposited on another piece of silicon substrate (2) surface using spin coating proceeding uses exposure imaging skill
Art, removes the photoresist of subregion, obtains the shape of platinum line image, in the shaped exterior, device surface is photo-etched
Glue is covered, and is exposed in shaped interior device surface；Device upper surface is covered using bushing, where only exposing the pattern
Region；It is thin in the platinum of shaped exterior using magnetron sputtering technique in platinum film thick one layer of 100nm of the area deposition not being blanked
Film is deposited on a photoresist, and device surface is deposited in the platinum film of shaped interior；Device is immersed in chloroform
20min, photoresist is dissolved by chloroform, and the platinum film on photoresist surface comes off, and only remains the platinum of shaped interior, so that
To platinum line image.Using ultrasonic wire bonding technique, 50 μm of silico-aluminum wire bond of diameter is connected on line image two ends
Electrode on, then the other end of B alloy wire is welded on external circuit, prepared by temperature sensor completes；
(3) 10 μm of polysilicon membrane will be deposited in the one side of silicon substrate made from step 2 (2)；Light is used on another side
Carving technology, prepares mask, a part of region on silicon substrate (2) surface is exposed, other regions are blanked；Then plasma quarter is carried out
Erosion, the region that silicon substrate (2) is exposed is etched completely away, exposes the polysilicon membrane of another side, obtain silicon fiml (1)；
(4) under vacuum, silicon substrate (2) and silicon fiml made from carborundum films (3) and step 3 is made in step one
(1) it is bonded, eutectic bonding, electrostatic bonding, Direct Bonding or weldering burning are bonded together, is obtained using gold silicon eutectic with silicon substrate (2)
Integral device.
Its temperature sensor is substantially exactly a platinum line image for being deposited on device surface, and there is electricity at the two ends of lines
Pole is used for electrical lead wire.
The representative embodiment of the present invention has obtained detailed description referring to the drawings.These detailed descriptions are only given
Those skilled in the art further believe content, for implementing the preferred aspect of the present invention, and will not be to the present invention
Scope limited.Only claim is used to determine protection scope of the present invention.Therefore, the spy in foregoing detailed description
The combination for step of seeking peace being used in most broad scope not necessarily implements the present invention, and alternatively only to the present invention
The representative embodiment of special detailed description provide teaching.In addition, using embodiment to obtain being attached with for the present invention, saying
A variety of features of teaching are provided in bright book to be combined in several ways, but these modes are not enumerated especially
Out.
Claims (9)
1. a kind of Multifunction Sensor based on carborundum films structure, it includes silicon fiml (1), silicon substrate (2), carborundum films
(3) and platinum resistor, wherein carborundum films (3) are sealed in a vacuum chamber by silicon fiml (1) and silicon substrate (2), and carborundum is thin
Film (3) is supported by four folded beams (6), and the upper and lower surface of carborundum films (3) respectively prepares one layer of gold electrode (41,42), and it is special
Levy and be：The upper gold electrode (41) of carborundum films (3) and electric capacity, the lower gold electrode of carborundum films (3) in silicon fiml (1) formation
(42) with the lower electric capacity of silicon substrate (2) formation, it is additionally provided with inside the Multifunction Sensor based on carborundum films structure with power-on and power-off
Hold the capacitance measurement circuit as capacitor, temperature sensor (5) is provided with the Support Position of silicon fiml (1), it is described multi-functional
Working sensor is under closed loop mode：When silicon fiml (1) no pressure is without friction, carborundum films (3) are located at silicon fiml (1) and silicon substrate
(2) centre position；When silicon fiml (1) is by ambient pressure, when being bent downwardly, distance between silicon fiml (1) and carborundum films (3)
Reduction causes that electric capacity increases and lower electric capacity is constant, and capacitance measurement circuit detects the change of both capacitance difference, to silicon substrate (2) and
Apply voltage between the lower gold electrode of carborundum films (3), force carborundum films (3) to produce displacement, change itself and silicon fiml
(1), the position of silicon substrate (2) so that power-on and power-off unit weight is newly equal, wherein, the voltage that capacitance measurement circuit applies is with silicon fiml (1)
Pressure increases and increased, therefore the size of measurement voltage can obtain pressure value.
2. the Multifunction Sensor according to claim 1 based on carborundum films structure, it is characterised in that：Many work(
When energy sensor runs into the vibration of vertical direction, the upper-lower position of carborundum films (3) changes, and silicon fiml (1) position is not
Become, each opposite change occurs for electric capacity up and down, thus identification vibration or pressure.
3. the Multifunction Sensor according to claim 2 based on carborundum films structure, it is characterised in that：The electric capacity
Measuring circuit is RC oscillating circuits, changes the frequency values of square wave by capacitance variations, capacitance is worth to by measuring its frequency.
4. the Multifunction Sensor according to claim 3 based on carborundum films structure, it is characterised in that：Described four
Root folded beam (6) forms a kind of carborundum films of band elasticity for a kind of band in micro- bushing loop configuration pattern.
5. the Multifunction Sensor according to claim 4 based on carborundum films structure, it is characterised in that：Carborundum is thin
Film (3) is obtained using chemical vapor deposition (CVD) process deposits.
6. the Multifunction Sensor according to claim 5 based on carborundum films structure, it is characterised in that：The carbonization
Silicon thin film (3) is the β phase silicon carbide films with cubic structure, and resistivity is more than 105Ω·cm。
7. the Multifunction Sensor according to claim 6 based on carborundum films structure, it is characterised in that：The silicon fiml
(1) it is polysilicon, the tangential of the silicon substrate (2) has 100,111,110,001.
8. the Multifunction Sensor according to claim 7 based on carborundum films structure, it is characterised in that：The gold electricity
Pole is prepared using thermal evaporation and magnetron sputtering technique.
9. a kind of preparation method for the Multifunction Sensor for making any one of the claims 1-8, its step is as follows：
(1) one layer of golden film is prepared using magnetron sputtering on one piece of silicon substrate (2) surface, it is then heavy using chemical vapor deposition (CVD)
One layer of β phase silicon carbides film (3) of product, reuses magnetron sputtering and prepares one layer of golden film；A polymer is prepared using photoetching process
The bushing pattern of photoresist；Gold, carborundum, gold are sequentially etched using plasma etching industrial, the silicon microstructure figure that is carbonized is obtained
Case；Using the silicon substrate below plasma etching industrial etching silicon carbide, 12 μm of etching depth, obtains silicon substrate (2) and carborundum is thin
Film (3)；
(2) photoresist of one layer of 1 μ m-thick is deposited on another piece of silicon substrate (2) surface using spin coating proceeding；Using exposure imaging technology,
The photoresist of subregion is removed, the shape of platinum line image is obtained, in the shaped exterior, device surface is photo-etched glue and covered
Lid, and be exposed in shaped interior device surface；Device upper surface is covered using bushing, only exposes the area where the pattern
Domain；Using magnetron sputtering technique in platinum film thick one layer of 100nm of the area deposition not being blanked, in the platinum film of shaped exterior
Deposition on a photoresist, device surface is deposited in the platinum film of shaped interior；Device is immersed in 20min in chloroform,
Photoresist is dissolved by chloroform, and the platinum film on photoresist surface comes off, and only remains the platinum of shaped interior, so as to obtain platinum
Belong to line image；Using ultrasonic wire bonding technique, 50 μm of silico-aluminum wire bond of diameter is connected on to the electrode at line image two ends
On, then the other end of B alloy wire is welded on external circuit, prepared by temperature sensor completes；
(3) 10 μm of polysilicon membrane will be deposited in the one side of silicon substrate made from step 2 (2)；Photoetching work is used on another side
Skill, prepares mask, a part of region on silicon substrate (2) surface is exposed, other regions are blanked；Then plasma etching is carried out,
The region that silicon substrate (2) is exposed is etched completely away, and exposes the polysilicon membrane of another side, obtains silicon fiml (1)；
(4) under vacuum, by step one be made silicon fiml (1) made from silicon substrate (2) and carborundum films (3) and step 3 and
Silicon substrate (2) is bonded using gold silicon eutectic, eutectic bonding, electrostatic bonding, Direct Bonding or weldering burning are bonded together, and obtain overall device
Part.
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| CN110296776A (en) * | 2019-07-22 | 2019-10-01 | 平顶山学院 | A kind of sensor and production method of high sensitivity |
| CN112479151A (en) * | 2020-11-20 | 2021-03-12 | 温州悦视科技有限公司 | Manufacturing method of multi-sensor layer, multi-sensor chip and manufacturing method thereof |
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| DE3942047A1 (en) * | 1989-12-20 | 1991-07-04 | Vega Grieshaber Gmbh & Co | PRESSURE GAUGE FOR HYDROSTATIC LEVEL MEASUREMENT |
| JPH116778A (en) * | 1997-06-13 | 1999-01-12 | Masaki Esashi | Vacuum sensor and manufacture of vacuum sensor |
| JP4296728B2 (en) * | 2001-07-06 | 2009-07-15 | 株式会社デンソー | Capacitance type pressure sensor, method for manufacturing the same, and sensor structure used for capacitance type pressure sensor |
| CN1217157C (en) * | 2002-10-24 | 2005-08-31 | 中国科学院电子学研究所 | Integrated temperature, humidity and atmospheric pressure sensor chip |
| CN202141554U (en) * | 2011-07-15 | 2012-02-08 | 严卫民 | Ceramic structure metal sensitive diaphragm capacitance pressure transducer |
| CN102768290B (en) * | 2012-05-31 | 2014-04-09 | 北京时代民芯科技有限公司 | MEMS (micro-electrochemical systems) accelerometer and production method thereof |
| CN102967394A (en) * | 2012-09-15 | 2013-03-13 | 华东光电集成器件研究所 | Symmetrical capacitor pressure sensor and manufacture method thereof |
| CN204705373U (en) * | 2015-04-13 | 2015-10-14 | 湛江市科海科技有限公司 | A kind of Multifunction Sensor based on carborundum films structure |
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