CN107340406A - A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof - Google Patents
A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof Download PDFInfo
- Publication number
- CN107340406A CN107340406A CN201710464017.6A CN201710464017A CN107340406A CN 107340406 A CN107340406 A CN 107340406A CN 201710464017 A CN201710464017 A CN 201710464017A CN 107340406 A CN107340406 A CN 107340406A
- Authority
- CN
- China
- Prior art keywords
- graphene film
- layer
- lower cover
- electrode
- cover cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
Abstract
The invention discloses a kind of capacitance microaccelerator using graphene film as electrode and preparation method thereof, belong to microelectromechanical systems field.The capacitance microaccelerator mainly includes upper and lower cover cap layers, movable structure layer and electrode layer.The method is mainly characterized in that instead of the metal or low resistivity single crystal silicon electrode in conventional condenser micro-acceleration gauge with graphene film, its advantage is：Graphene film has more excellent electric conductivity, thermal conductivity and lower residual stress, so as to improve the stability of capacitance microaccelerator and reliability.
Description
Technical field
The invention belongs to microelectromechanical systems field, specifically a kind of electric capacity using graphene film as electrode declines
Accelerometer and preparation method thereof.
Background technology
Micro-acceleration gauge is a kind of mechanics sensor formed based on micro-nano technology fabrication techniques, is widely used in inertia
The measurement of the parameters such as power, vibration, impact and inclination angle.According to the difference of operation principle, micro-acceleration gauge can be divided into pressure resistance type,
The species such as condenser type, piezoelectric type, tunneling type and resonant mode.Capacitance microaccelerator preparation technology is simple, small volume, weight
Gently, in temperature characterisitic, measurement accuracy, closed-loop control and with the single-chip integration of circuit etc. there is the advantages of unique, it is wide
It is general to be applied to the various fields such as automotive electronics, smart mobile phone, medical instrument and military equipment.Capacitance microaccelerator includes
Upper and lower cover cap layers, movable structure layer (substrate, cantilever beam and mass) and electrode layer.Its operation principle is：Mass and block
Layer medial electrode layer forms electric capacity, when mass produces displacement under inertia force effect caused by acceleration, causes electric capacity
Change, the measurement of acceleration is realized by measuring the change of electric capacity.
Conventional condenser micro-acceleration gauge is to be used as electrode material by the use of metal or low resistivity single crystal silicon.Such as Publication No.
CN100487461C, the Chinese patent of entitled " metal capacitance microaccelerator " is using metal electrode；Publication No.
CN101907637B, the Chinese patent of entitled " triaxial differential accelerometer and preparation method thereof " is using low-resistivity list
Crystal silicon electrode.Metal electrode is also easy to produce residual stress in preparation process and follow-up heat treatment process.When temperature changes
When, metal electrode stress state can also change, and cause the output characteristics of device to change.Also, due to metal and low resistance
The room temperature thermal conductivity of rate monocrystalline silicon is relatively low, during conventional condenser micro-acceleration gauge use the heating of itself easily cause device
Output shift, cause larger error.Compared to metal or low resistivity single crystal silicon, graphene film is as condenser type micro-acceleration
The electrode material of meter has the following advantages that：(1) graphene film has an excellent conductive characteristic, and highest carrier mobility can be with
Reach 200000cm2/ Vs, beyond any material being currently known.(2) graphene film room temperature thermal conductivity about 5000W/mK, far
Higher than traditional metal or low resistivity single crystal silicon electrode material., can be fast by heat using graphene film as electrode material
Speed dissipates and device is reached thermal balance, reduces the output shift of device, improves the reliability and stability of device.(3) graphite
Contacted between alkene film and substrate for Van der Waals for, there is lower residual stress.
The content of the invention
It is an object of the invention to overcome the shortcomings of above-mentioned conventional condenser micro-acceleration gauge, there is provided one kind is with graphene
The capacitance microaccelerator of film as electrode material and preparation method thereof.Graphene membrane electrode compares conventional metals or low
Resistivity monocrystalline silicon electrode has more excellent conduction, thermal conduction characteristic and lower residual stress, is declined so as to improve electric capacity
The stability and reliability of accelerometer.
The above-mentioned advantage of the present invention is achieved by following technical solution：A kind of graphene film is as electrode
Capacitance microaccelerator, mainly include upper and lower cover cap layers, movable structure layer (including substrate, cantilever beam and mass) and electricity
Pole layer.Mass is connected by cantilever beam with substrate in movable structure layer.Upper and lower cover cap layers material is glass, movable structure layer
For low resistivity single crystal silicon (n-type, resistivity 1-10 Ω cm), electrode layer is graphene film.Graphene film is using chemistry
It is prepared by vapour deposition process.Cavity and boss are prepared in the inner side of upper and lower cover cap layers.Graphene membrane electrode layer is prepared upper and lower
The inner side of cap and the upper and lower surface of mass.Graphene membrane electrode and upper and lower cover cap layers inner side on the mass
Graphene membrane electrode form one group of Differential Detection electric capacity, so as to being measured to the acceleration perpendicular to cap direction.
The specific preparation process of the capacitance microaccelerator is as follows：
(1) depthkeeping is prepared in upper and lower cover cap layers medial electrode region by techniques such as ultraviolet photolithographic and wet etchings
The cavity and boss of degree.Cavity provides the movement travel of mass, and determines the initial value of detection electric capacity.Boss is in order to anti-
Only mass and cap adhesion, the movement travel for limiting mass within limits, improve the shock resistance of accelerometer
Ability.
(2) the logical of certain size is formed in cap by the technique such as ultraviolet photolithographic and wet etching (or laser boring)
Hole.Pass through the technique such as ultraviolet photolithographic and plating, electro-coppering filling through hole.Through hole is that graphene membrane electrode realizes conductive with the external world
With the passage of heat conduction.
(3) matter by the transfer and patterning process of graphene film on the inside of upper and lower cover cap layers with movable structure layer
Gauge block upper and lower surface prepares graphene membrane electrode layer.
(4) shifting process of graphene film is specific as follows：(existed first in graphene film using chemical vapour deposition technique
Gained is prepared in Cu or Ni paper tinsel metal substrates) surface spin coating one strata methyl methacrylate (PMMA) film, is then soaked
Steep the FeCl in 1M3Or (NH4)2S2O8About 5 hours in etchant solution, metal substrate is eroded, obtains being suspended in etchant solution table
The graphene film in face.The graphene film being suspended in etchant solution is picked up using target substrate, carries out appropriate heat treatment
(about 60-150 DEG C of temperature, about 30 minutes time), remove the PMMA on graphene film surface with acetone, finally give surface covering
There is the target substrate of graphene film.
(5) patterning process of graphene film is specific as follows：First in one layer of photoresist of graphene film surface spin coating
Or PMMA, it is with techniques such as ultraviolet photolithographic or electron beam exposures that photoresist or PMMA is graphical, by the use of photoresist or PMMA as
Mask, the graphene film of figure with reference to needed for being prepared dry etch process.
(6) according to performance requirements such as the range of accelerometer and sensitivity, rationally design the size and shape of mass with
And the rigidity of cantilever beam.Mass and cantilever beam are prepared by the technique such as ultraviolet photolithographic and wet etching (or dry etching).
(7) upper cap layer/movable structure layer/lower cover cap layers three-decker is realized one directly by anode linkage technique
Individual sealing and centrosymmetric overall structure.
The present invention has the following advantages that compared with conventional condenser micro-acceleration gauge：Graphene film compares traditional metal
Or low resistivity single crystal silicon electrode material, there is more excellent conduction, thermal conduction characteristic and lower residual stress, so as to improve
The stability and reliability of capacitance microaccelerator.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present invention.The implication of each digitized representation is in figure：1, cap；2nd, 3 and 4 points
Substrate, cantilever beam and mass that Wei be in movable structure layer；5, boss；6, through hole；7, cavity；8, graphene membrane electrode
Layer.
Embodiment
In order that present disclosure is more clearly understood, below according to specific embodiment and with reference to accompanying drawing to the present invention
It is further described.
A kind of capacitance microaccelerator of graphene film as electrode, mainly include upper and lower cover cap layers 1, movable knot
Structure layer (including substrate 2, cantilever beam 3 and mass 4) and electrode layer 8.In this embodiment, upper and lower cover cap layers 1 are glass, movably
Structure sheaf (including substrate 2, cantilever beam 3 and mass 4) is n-type resistivity 1-10 Ω cm monocrystalline silicon, and electrode layer 8 is graphite
Alkene film.Its specific preparation process is as follows：
(1) depthkeeping is prepared in the medial electrode region of upper and lower cover cap layers 1 by techniques such as ultraviolet photolithographic and wet etchings
The cavity 7 and boss 5 of degree.Cavity 7 provides the movement travel of mass 4.Boss 5 is to prevent mass 4 and cap 1
Adhesion, the movement travel for limiting mass 4 within limits, improve the impact resistance of accelerometer.
(2) scale is formed in upper and lower cover cap layers 1 by the technique such as ultraviolet photolithographic and wet etching (or laser boring)
Very little through hole 6.Pass through the technique such as ultraviolet photolithographic and plating, electro-coppering filling through hole 6.Through hole 6 is that graphene membrane electrode 8 is realized
With extraneous conductive and heat conduction passage.
(3) by the transfer and patterning process of graphene film in the inner side of upper and lower cover cap layers 1 and the matter of movable structure layer
The upper and lower surface of gauge block 4 prepares graphene membrane electrode layer 8.The graphene membrane electrode and upper and lower cover on the mass surface
Graphene membrane electrode on the inside of cap layers forms one group of Differential Detection electric capacity, so as to enter to the acceleration perpendicular to cap direction
Row measurement.(4) shifting process of graphene film is specific as follows：(existed first in graphene film using chemical vapour deposition technique
Gained is prepared in Cu or Ni paper tinsel metal substrates) one layer of PMMA film of surface spin coating (2000rpm, 90 seconds), then it is soaked in
1M FeCl3Or (NH4)2S2O8About 5 hours in etchant solution, metal substrate is eroded, obtains being suspended in etchant solution surface
Graphene film.The graphene film being suspended in etchant solution is picked up using target substrate, carries out appropriate heat treatment (temperature
About 60-150 DEG C, about 30 minutes time), remove the PMMA on graphene film surface with acetone, finally give surface covered with stone
The target substrate of black alkene film.
(5) patterning process of graphene film is specific as follows：First in one layer of photoresist of graphene film surface spin coating
Or PMMA, it is with techniques such as ultraviolet photolithographic or electron beam exposures that photoresist or PMMA is graphical, by the use of photoresist or PMMA as
Mask, the graphene film of figure with reference to needed for being prepared dry etch process.
(6) according to performance requirements such as the range of accelerometer and sensitivity, rationally design the size and shape of mass 4 with
And the rigidity of cantilever beam 3.Mass 4 and cantilever beam are prepared by the technique such as ultraviolet photolithographic and wet etching (or dry etching)
3。
(7) by the three-decker of 2/ lower cover cap layers of above-mentioned 1/ movable structure layer of upper cap layer 1 directly by anode linkage technique,
Realize an overall structure that is sealing and being centrosymmetric.
The present invention is limited only to absolutely not embodiment, the various improvement made in the case where not departing from feature of present invention and objective, replaces
Change or combine, be all contained in protection scope of the present invention.
Claims (7)
1. a kind of capacitance microaccelerator using graphene film as electrode, mainly include upper and lower cover cap layers, movable structure
Layer (including substrate, cantilever beam and mass) and electrode layer, it is characterised in that following preparation process：
(1) prepares the cavity of certain depth by techniques such as ultraviolet photolithographic and wet etchings in cap medial electrode region
And boss；
(2) forms certain size by the technique such as ultraviolet photolithographic and wet etching (or laser boring) in upper and lower cover cap layers
Through hole, pass through the technique such as ultraviolet photolithographic and plating, electro-coppering filling through hole；
(3) is prepared by the transfer and patterning process of graphene film on the inside of upper and lower cover cap layers with mass upper and lower surface
Go out graphene membrane electrode layer；
(4) rationally designs the size and shape of mass and hanged according to performance requirements such as the range of accelerometer and sensitivity
The rigidity of arm beam；Mass and cantilever beam are prepared by the technique such as ultraviolet photolithographic and wet etching (or dry etching)；
(5) by upper cap layer/movable structure layer/lower cover cap layers three-decker directly by anode linkage technique, realize one it is close
Envelope and centrosymmetric overall structure.
2. a kind of capacitance microaccelerator using graphene film as electrode according to claim 1, its feature exist
In upper and lower cover cap layers material is glass, and movable structure layer is low resistivity single crystal silicon (n-type, resistivity 1-10 Ω cm), electricity
Pole layer is the graphene film of 1-30 atomic layer level thickness.
3. a kind of capacitance microaccelerator using graphene film as electrode according to claim 1, its feature exist
In cavity and boss are prepared and prepared in the inner side of upper and lower cover cap layers, graphene membrane electrode layer in the inner side of upper and lower cover cap layers
And the upper and lower surface of mass.
4. a kind of capacitance microaccelerator using graphene film as electrode according to claim 1, its feature exist
In the graphene membrane electrode layer is realized and extraneous conduction and heat conduction by through hole in cap.
A kind of 5. preparation using graphene film as the capacitance microaccelerator of electrode according to claim 1 or 2
Method, it is characterised in that the graphene film is to use chemical vapour deposition technique system in metal substrate (Cu or Ni paper tinsels)
It is standby.
A kind of 6. preparation using graphene film as the capacitance microaccelerator of electrode according to claim 1 or 5
Method, it is characterised in that graphene film is transferred in upper and lower cover cap layers and movable structure layer and comprised the following steps：First
In graphene film surface spin coating one strata methyl methacrylate (PMMA) film, FeCl is then soaked in3Or (NH4)2S2O8In etchant solution, metal substrate is eroded, obtains being suspended in the graphene film on etchant solution surface；With cap and can
Dynamic structure sheaf picks up the graphene film being suspended in etchant solution, carries out appropriate heat treatment (about 60-150 DEG C of temperature, time
About 30 minutes), remove the PMMA on graphene film surface with acetone, finally give cap of the surface covered with graphene film
With movable structure layer.
A kind of the preparation side of the capacitance microaccelerator of electrode is used as using graphene film 7. according to claim 1
Method, it is characterised in that the processing step of the patterned graphene film is as follows：First in one layer of graphene film surface spin coating
Photoresist or PMMA, it is with techniques such as ultraviolet photolithographic or electron beam exposures that photoresist or PMMA is graphical, using photoresist or
PMMA is as mask, the graphene film of figure with reference to needed for being prepared dry etch process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710464017.6A CN107340406A (en) | 2017-06-19 | 2017-06-19 | A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710464017.6A CN107340406A (en) | 2017-06-19 | 2017-06-19 | A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107340406A true CN107340406A (en) | 2017-11-10 |
Family
ID=60221466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710464017.6A Pending CN107340406A (en) | 2017-06-19 | 2017-06-19 | A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107340406A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110824195A (en) * | 2019-11-19 | 2020-02-21 | 华东交通大学 | Acceleration sensor based on bistable physical conversion of graphene |
| CN111025381A (en) * | 2019-12-26 | 2020-04-17 | 吉林大学 | Piezoresistive geophone based on graphene |
| CN113219206A (en) * | 2021-04-14 | 2021-08-06 | 西安航天精密机电研究所 | Graphene accelerometer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913598A (en) * | 2010-08-06 | 2010-12-15 | 浙江大学 | Method for preparing graphene membrane |
| US20120234094A1 (en) * | 2011-03-14 | 2012-09-20 | Honeywell International Inc. | Methods and apparatus for improving performance of an accelerometer |
| CN102701600A (en) * | 2011-09-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Method for preparing patterned graphene film and graphene film |
| CN103769025A (en) * | 2014-01-15 | 2014-05-07 | 华中科技大学 | Microbubble generator and preparation method thereof |
| CN205067524U (en) * | 2015-11-11 | 2016-03-02 | 常州二维光电科技有限公司 | Graphite alkene acceleration sensor |
-
2017
- 2017-06-19 CN CN201710464017.6A patent/CN107340406A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913598A (en) * | 2010-08-06 | 2010-12-15 | 浙江大学 | Method for preparing graphene membrane |
| US20120234094A1 (en) * | 2011-03-14 | 2012-09-20 | Honeywell International Inc. | Methods and apparatus for improving performance of an accelerometer |
| CN102701600A (en) * | 2011-09-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Method for preparing patterned graphene film and graphene film |
| CN103769025A (en) * | 2014-01-15 | 2014-05-07 | 华中科技大学 | Microbubble generator and preparation method thereof |
| CN205067524U (en) * | 2015-11-11 | 2016-03-02 | 常州二维光电科技有限公司 | Graphite alkene acceleration sensor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110824195A (en) * | 2019-11-19 | 2020-02-21 | 华东交通大学 | Acceleration sensor based on bistable physical conversion of graphene |
| CN111025381A (en) * | 2019-12-26 | 2020-04-17 | 吉林大学 | Piezoresistive geophone based on graphene |
| CN111025381B (en) * | 2019-12-26 | 2022-02-22 | 吉林大学 | Piezoresistive geophone based on graphene |
| CN113219206A (en) * | 2021-04-14 | 2021-08-06 | 西安航天精密机电研究所 | Graphene accelerometer |
| CN113219206B (en) * | 2021-04-14 | 2022-12-16 | 西安航天精密机电研究所 | Graphene accelerometer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107015025B (en) | A kind of differential type graphene resonance beam acceleration transducer | |
| CN102495234B (en) | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method | |
| CN201653604U (en) | Pressure sensor | |
| Wang et al. | Monolithic integration of pressure plus acceleration composite TPMS sensors with a single-sided micromachining technology | |
| CN106017751B (en) | A kind of high sensitivity piezoresistive pressure sensor and preparation method thereof | |
| CN109485011B (en) | MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process | |
| CN107340406A (en) | A kind of graphene membrane electrode capacitance microaccelerator and preparation method thereof | |
| CN102759637B (en) | MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof | |
| CN103378082A (en) | Graphene pressure sensors | |
| CN102608355A (en) | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof | |
| CN105181231A (en) | Pressure sensor of packaging structure and preparation method thereof | |
| CN102589760B (en) | Minitype capacitance-type mechanical sensor and preparation method thereof | |
| CN105174198A (en) | Acceleration sensor of package structure and preparation method thereof | |
| CN107817364B (en) | A kind of two axis accelerometer chip of MEMS straight pull and vertical compression formula and preparation method thereof | |
| CN104596683A (en) | Pressure sensor based on stratified materials and piezoelectric effect measuring system | |
| CN107255736B (en) | A kind of resonant mode graphene twin-axis accelerometer | |
| CN109297622B (en) | Miniature piezoresistive stress sensor based on tungsten diselenide | |
| WO2015077394A1 (en) | Microfabrication technology for producing sensing cells for molecular electronic transducer based seismometer | |
| CN106568548A (en) | Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology | |
| CN104340955B (en) | The method of micro Pirani gage and the integrated processing of body silicon device | |
| CN104045049A (en) | Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology | |
| CN103234669B (en) | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor | |
| CN104181331B (en) | A kind of piezoresistance type acceleration sensor and its manufacturing method | |
| CN109239400A (en) | The double vibrating beam accelerometers of integral type quartz and preparation method | |
| CN105628013B (en) | A kind of assembly type hemispherical resonator gyroscope and its processing technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171110 |