CN102393264B - Pressure sensor based on nano-piezoelectric fiber - Google Patents
Pressure sensor based on nano-piezoelectric fiber Download PDFInfo
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- CN102393264B CN102393264B CN 201110343031 CN201110343031A CN102393264B CN 102393264 B CN102393264 B CN 102393264B CN 201110343031 CN201110343031 CN 201110343031 CN 201110343031 A CN201110343031 A CN 201110343031A CN 102393264 B CN102393264 B CN 102393264B
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Abstract
The invention discloses a pressure sensor based on nano-piezoelectric fiber, relates to a pressure sensor, and provides the pressure sensor which is based on the nano-piezoelectric fiber and has higher sensitivity. The pressure sensor is provided with a silicone substrate, a boron dopped layer, a silicon dioxide thin film, two metal electrodes and the PVDF (Polyvinylidene Fluoride) nano-piezoelectric fiber, wherein the boron dopped layer is arranged on the upper surface of the silicone substrate and connected with the silicone substrate into a whole; a cavity is arranged in the silicone substrate; the silicon dioxide thin film grows on the non-cavity side of the silicone substrate; the metal electrodes are fixed the silicon dioxide thin film; the PVDF nano-piezoelectric fiber is arranged between the metal electrodes directly; and the PVDF nano-piezoelectric fiber are in ohmic contact with and the metal electrodes.
Description
Technical field
The present invention relates to a kind of pressure transducer, especially relate to a kind of based on the pressure transducer of directly writing electrospinning nanometer piezoelectric fabric.
Background technology
Piezoelectric transducer is a kind of self-power generation type sensor, and it under external force, produces electric charge at dielectric surface based on some dielectric piezoelectric effect, thereby realizes the purpose of non-electricity measure.Piezoelectric sensor is a force sensitive element, and it can measure final those non-electric physical quantity, for example dynamic force, dynamic pressure, vibration accelerations etc. that can be transformed to power.Characteristics such as piezoelectric transducer has that volume is little, light weight, frequency response height, signal to noise ratio (S/N ratio) are big.Because it does not have moving component, therefore firm in structure, reliability, stability height.
Based on above advantage, piezoelectric transducer has obtained a large amount of concern of people.As the hard disk that is applied to computer anti-falls protection, regulates the piezoelectric acceleration transducer of the security performance aspects such as focusing, safe automobile air bag, anti-lock braking system and pull-in control system of camera automatically; Obtained aspect dynamic pressure measurement in recent years very that the piezoelectric pressure indicator of widespread use has good dynamic response (high frequency can reach 400kHz), also had physical strength height, endurance, vibration resistance, high temperature resistant, advantage such as little and life-span of volume is long; Piezoelectric immunosensor, piezoelectric DNA sensor are applied in the biomedical measurement, to reach the purpose to immunoassay, DNA identification.
At present, it is piezoelectric crystal and piezoelectric ceramics that piezoelectric sensor uses maximum materials, wherein, piezoelectric crystal mainly is quartz crystal, water-soluble piezoelectric crystal and lithium columbate crystal, the sensitivity of quartz crystal is low, and do not have pyroelectric effect (because effect that temperature variation causes electric charge to discharge), be mainly used to measure the power of big value or be used for the high occasion of accuracy, stability requirement and be used for the production standard sensor; Therefore water-soluble piezoelectric crystal is easy to make moist, physical strength is low, resistivity is also low, is only limited under the low environment of room temperature and humidity to use; Lithium niobate has tangible anisotropy mechanical property, compares with quartz crystal that it is very fragile, and thermal shock is very poor, so in process and assemble with must be careful in using, avoid overexerting, chilling and anxious heat.The sensitivity of the piezoelectric transducer that the employing piezoelectric ceramics is made is higher, but temperature stability and physical strength all are not so good as quartz, need higher working temperature simultaneously.
The development of piezoelectric high polymer has had the history of 30 or 40 years, and Peterlin etc. have observed in 1967 and rolled the ε value of prolonging Kynoar (PVDF), have also confirmed its piezoelectricity.The PVDF piezoelectric membrane has very strong piezoelectric property, its electric charge piezoelectric constant d is higher more than 10 times than quartzy, the value of voltage piezoelectric constant g is than high about 20 times of PZT (piezoelectric ceramics), PVDF is because characteristics such as its good piezoelectric property, dirigibility, chemical stability, biocompatibility, low acoustic impedance, high bandwidth, handling ease, light quality and low costs, is applied to sonar, biomedicine, acoustics, pneumatic and hydraulic system, MEMS and based on the field of MEMS..
Some scholars are the sensor that different application has been made on the basis with PVDF.Shrinov etc. are by having made pressure transducer with the PVDF thin-film package on the PVDF material, the PVDF pressure sensor application that Gonzalez etc. make is at biomedical aspect, and deformation and the motion sensor based on PVDF also successfully tested in simulations such as Jingang.
The piezoelectric property of PVDF depends mainly on the content of β phase PVDF, and at present, the method for preparing β phase PVDF mainly contains high pressure crystal method, electric field polarization method and single shaft hot-drawing method.Preceding two kinds of methods are relatively harsher to the requirement of experiment condition and equipment, and are easy to generate defective with a kind of method in back.People such as Bhoopesh P.Mahale adopt the method for rotary coating to prepare β phase PVDF, carry out optimum control to obtain ideal thickness and β PVDF film mutually to rotational speed and time.
Above PVDF thin film fabrication complex technical process, conditions such as temperature, polarizing voltage all need strict control.
Chinese patent CN1250158 discloses a kind of piezoelectric pressure indicator, two kinds of pressure transducers.All use the piezo-electricity composite material of forming by noncrystal haloflex, crystal haloflex and ceramic powder.First kind is piezoelectric cable, the outer electric conductor that comprises by the metal spiral silk and fill the piezoelectric composite layer of interior electric conductor that the fine polymer fiber of insulation therebetween forms, the interior electric conductor of ring bag, be made of the metallic film that is attached on the thin polymer film.Metallic film touches mutually with the piezoelectric composite layer but is separated with interior electric conductor, and protective jacket.Second kind is the plane formula pressure transducer.Comprise planar shaped piezoelectric composite layer, be clipped between the two metallic film electric conductors on two thin polymer films.Metallic film and composite layer touch, but are separated from each other.
Chinese patent CN101573600 discloses a kind of pressure transducer, and described pressure transducer comprises that Fiber Bragg Grating (FBG) strain transducer, fibre optic strain sensor carrier bar and the pressure that are arranged in the optical fiber strengthen sleeve pipe.Carrier bar is formed by first glass-fiber epoxy-resin composite materials, and described first glass-fiber epoxy-resin composite materials has the first rigidity/elastic modulus on the straining and sensing direction.Sleeve pipe is formed by second compound substance, and described second compound substance is compared with the axial rigidity on the straining and sensing direction of carrier bar has the lower axial rigidity on the straining and sensing direction.Under the hydrostatic load that is applied, sleeve pipe is applied to bar on the part of sleeve pipe with axial compression load.The axial compression strain that bar is subjected to is created in axial compression strain facies in the bar during with if there is no sleeve pipe than increase in the therefore zone in sleeve pipe.
Summary of the invention
The objective of the invention is to provides a kind of sensitivity the higher pressure transducer based on the nanometer piezoelectric fabric in order to overcome the PVDF piezoelectric membrane complex technical process that exists in the prior art, the strict problem of creating conditions.
The present invention is provided with silicon base, boron-dopped layer, silica membrane, metal electrode and PVDF nanometer piezoelectric fabric; Described boron-dopped layer is located at the upper surface of silicon base, boron-dopped layer and silicon base are connected as a single entity, be provided with cavity in the silicon base, silicon dioxide film growth does not have a side of cavity in silicon base, 2 metal electrodes are fixed on the silica membrane, PVDF nanometer piezoelectric fabric directly writes between 2 metal electrodes, forms Ohmic contact between PVDF nanometer piezoelectric fabric and the metal electrode.
The upper surface of described silicon base can be square structure.
Described cavity can be the trapezoidal shape cavity.
The thickness of described silica membrane can be 0.5～1.5 μ m.
Described metal electrode is fixed on the silica membrane, can adopt the method for sputter that metal electrode is fixed on the silica membrane; The thickness of described metal electrode can be 0.3～0.6 μ m.
Described PVDF nanometer piezoelectric fabric directly writes between 2 metal electrodes, can in the mode of directly writing PVDF nanometer piezoelectric fabric directly be write between 2 metal electrodes by electrostatic spinning apparatus; The diameter of described nanometer piezoelectric fabric can be 60～800nm.
Described silica membrane is as insulation course.The effect of boron-dopped layer mainly is the pressure sensitive film that obtains ideal thickness in the etch stop process.On silica membrane, arrange two metal electrodes, metal electrode be fixed on the silica membrane that PVDF nanometer piezoelectric fabric is directly to write between two metal electrodes in the mode of directly writing by electrostatic spinning apparatus.When the external world has pressure to be applied on the pressure sensitive film of sensor, stressed the deforming of PVDF nanometer piezoelectric fabric, because piezoelectric effect, positive and negative opposite electric charge appears in its inner polarization phenomena that produce simultaneously on the both ends of the surface of nanometer piezoelectric fabric.Successively the electric charge between two metal electrodes is amplified and measure by charge amplifier and metering circuit, and then calculate the size of pressure.
Sensitive element of the present invention is a PVDF nanometer piezoelectric fabric, compares with traditional PVDF thin film fabrication technology, and advantage of the present invention is: process is simple, and cost is lower; The preparation of material does not have strict requirement to experiment condition, can at room temperature carry out.And its form is a fiber, and specific surface area is more much bigger than general PVDF film, can effectively improve the sensitivity of sensor.
The piezoelectric that the present invention adopts also is PVDF, is nano level fiber but its form is a diameter.Sensor medium sensitivity is an important index, and the sensitivity of sensing membrane is directly proportional with the surface area of per unit mass film.Because electrospinning nanometer piezoelectric fabric is more much bigger than the specific surface area of general film, the therefore sensitivity that can improve sensor.Can directly PVDF nanometer piezoelectric fabric be write between the electrode by electrostatic spinning apparatus, electrostatic spinning apparatus mainly is made up of kapillary shower nozzle, fiber collecting plate (device), polymer fluid feed system and high-voltage generator four parts, and equipment is simple; Experiment condition is not had strict requirement, can at room temperature carry out.
Description of drawings
Fig. 1 is the structural representation of the pressure transducer based on the nanometer piezoelectric fabric of the present invention.
Fig. 2 is the structural representation of silica membrane, metal electrode and the PVDF nanometer piezoelectric fabric of the pressure transducer based on the nanometer piezoelectric fabric of the present invention.
Fig. 3 is the A-A sectional view of Fig. 2.
In Fig. 1～3, respectively be labeled as: 1, silicon base 2, boron-dopped layer 3, silica membrane 4, metal electrode 5, PVDF nanometer piezoelectric fabric.
Embodiment
Referring to Fig. 1～3, the embodiment of the invention is provided with silicon base 1, boron-dopped layer 2, silica membrane 3, metal electrode 4 and PVDF nanometer piezoelectric fabric 5; Described boron-dopped layer 2 is located at the upper surface of silicon base 1, boron-dopped layer 2 is connected as a single entity with silicon base 1, be provided with cavity in the silicon base 1, silica membrane 3 is grown in a side of silicon base 1 no cavity, 2 metal electrodes 4 are fixed on the silica membrane 3, PVDF nanometer piezoelectric fabric 5 directly writes between 2 metal electrodes 4, forms Ohmic contact between PVDF nanometer piezoelectric fabric 5 and the metal electrode 4.
The upper surface of described silicon base 1 is a square structure.Described cavity is the trapezoidal shape cavity.
The thickness of described silica membrane 3 is 0.5～1.5 μ m.
Described metal electrode 4 is fixed on the silica membrane 3, adopts the method for sputter that metal electrode 4 is fixed on the silica membrane 3; The thickness of described metal electrode 4 can be 0.3～0.6 μ m.
Described PVDF nanometer piezoelectric fabric 5 directly writes between 2 metal electrodes 4, PVDF nanometer piezoelectric fabric 5 is directly write between 2 metal electrodes 4 in the mode of directly writing by electrostatic spinning apparatus; The diameter of described nanometer piezoelectric fabric is 60～800nm.
In the technological process, at first silicon base 1 is carried out steps such as two-sided oxidation, photoetching, obtain silica membrane, as the mask layer that boron diffusion is played barrier effect.Secondly silica membrane is carried out windowization, silicon base 1 is carried out the boron doping, obtain boron-dopped layer 2, thickness is 6 μ m～30 μ m, and the effect of boron-dopped layer 2 mainly is the pressure sensitive film that obtains ideal thickness in the etch stop process.Silicon base 1 and boron-dopped layer 2 are connected as a single entity, the silicon base 1 inner cavity that uses the corrosion of etch stop technology as the halfpace type.At the long layer of silicon dioxide film of no cavity one adnation, thickness is 0.5～1.5 μ m, by the method for sputter, metal electrode 4 is fixed on the silica membrane 3 at last then, and metal electrode thickness is 0.3～0.6 μ m.Amplify and measure by electric charge, calculate the size of pressure 4 of two metal electrodes.PVDF nanometer piezoelectric fabric 5 is directly to write between two metal electrodes 4 in the mode of directly writing by electrostatic spinning apparatus, and fibre diameter is to form good Ohmic contact between 60～800nm nanometer piezoelectric fabric and the metal electrode.
The course of work of the present invention is: when the external world has pressure to be applied on the pressure sensitive film of pressure transducer, cause the distortion of PVDF nanometer piezoelectric fabric, since the piezoelectric effect of this material, its inner polarization phenomena that take place, simultaneously, positive and negative opposite electric charge appears on two end faces of fiber.The electric charge of 4 of two metal electrodes is amplified respectively and measure by charge amplifier and metering circuit, the variation of measurement result reflects the variation of ambient pressure indirectly, and then calculates the size of pressure.
Claims (8)
1. the pressure transducer based on the nanometer piezoelectric fabric is characterized in that being provided with silicon base, boron-dopped layer, silica membrane, metal electrode and PVDF nanometer piezoelectric fabric; Described boron-dopped layer is located at the upper surface of silicon base, boron-dopped layer and silicon base are connected as a single entity, be provided with cavity in the silicon base, silicon dioxide film growth does not have a side of cavity in silicon base, 2 metal electrodes are fixed on the silica membrane, PVDF nanometer piezoelectric fabric directly writes between 2 metal electrodes, forms Ohmic contact between PVDF nanometer piezoelectric fabric and the metal electrode.
2. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1, the upper surface that it is characterized in that described silicon base is a square structure.
3. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1 is characterized in that described cavity is the trapezoidal shape cavity.
4. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1, the thickness that it is characterized in that described silica membrane are 0.5～1.5 μ m.
5. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1 is characterized in that described metal electrode is fixed on the silica membrane, is to adopt the method for sputter that metal electrode is fixed on the silica membrane.
6. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1, the thickness that it is characterized in that described metal electrode are 0.3～0.6 μ m.
7. a kind of pressure transducer as claimed in claim 1 based on the nanometer piezoelectric fabric, it is characterized in that described PVDF nanometer piezoelectric fabric directly writes between 2 metal electrodes, be in the mode of directly writing PVDF nanometer piezoelectric fabric directly to be write between 2 metal electrodes by electrostatic spinning apparatus.
8. a kind of pressure transducer based on the nanometer piezoelectric fabric as claimed in claim 1, the diameter that it is characterized in that described nanometer piezoelectric fabric is 60～800nm.
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| WO2015061726A1 (en) * | 2013-10-25 | 2015-04-30 | Board Of Regents, The University Of Texas System | Method for fabricating a pressure sensor |
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| CN103335764B (en) * | 2013-05-10 | 2015-11-11 | 厦门大学 | One can locate shock transducer |
| CN104280177B (en) * | 2014-09-29 | 2016-08-03 | 东华大学 | A kind of sole pressure test device and the full fabric shoe pad with this device |
| CN104291264B (en) * | 2014-10-17 | 2016-01-06 | 华中科技大学 | A kind of flexible energy capture device based on nano-piezoelectric fiber and preparation method thereof |
| CN104536613B (en) * | 2015-01-08 | 2017-11-24 | 厦门大学 | The preparation method of polyunsymfluorethylepiezoelectric piezoelectric nanofiber touch-screen sensing element |
| CN105716753B (en) * | 2016-04-26 | 2018-08-17 | 东南大学 | A kind of piezoresistive pressure sensor and preparation method thereof with self-test device |
| CN109143322B (en) * | 2018-08-22 | 2020-06-19 | 吉林大学 | Seismic detector based on PVDF piezoelectric nanofiber |
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| JP4600468B2 (en) * | 2007-12-10 | 2010-12-15 | セイコーエプソン株式会社 | SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微系统与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
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