CN104781913B - 具有偏移的同心凹槽图案的抛光垫以及使用其抛光基板的方法 - Google Patents

具有偏移的同心凹槽图案的抛光垫以及使用其抛光基板的方法 Download PDF

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Publication number
CN104781913B
CN104781913B CN201380058083.3A CN201380058083A CN104781913B CN 104781913 B CN104781913 B CN 104781913B CN 201380058083 A CN201380058083 A CN 201380058083A CN 104781913 B CN104781913 B CN 104781913B
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CN
China
Prior art keywords
less
concentric
grooves
polishing pad
groove
Prior art date
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CN201380058083.3A
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English (en)
Chinese (zh)
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CN104781913A (zh
Inventor
蔡庆铭
郑世伟
杨坤树
徐嘉成
刘圣焕
许丰智
C.科克约翰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
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Cabot Microelectronics Corp
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Publication of CN104781913A publication Critical patent/CN104781913A/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201380058083.3A 2012-11-06 2013-11-05 具有偏移的同心凹槽图案的抛光垫以及使用其抛光基板的方法 Active CN104781913B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261723226P 2012-11-06 2012-11-06
US61/723,226 2012-11-06
PCT/US2013/068523 WO2014074521A1 (en) 2012-11-06 2013-11-05 Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith

Publications (2)

Publication Number Publication Date
CN104781913A CN104781913A (zh) 2015-07-15
CN104781913B true CN104781913B (zh) 2017-10-20

Family

ID=50685113

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380058083.3A Active CN104781913B (zh) 2012-11-06 2013-11-05 具有偏移的同心凹槽图案的抛光垫以及使用其抛光基板的方法

Country Status (7)

Country Link
US (1) US9687956B2 (enExample)
JP (1) JP6336997B2 (enExample)
KR (1) KR102148050B1 (enExample)
CN (1) CN104781913B (enExample)
SG (1) SG11201503496YA (enExample)
TW (1) TWI633970B (enExample)
WO (1) WO2014074521A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449597B (zh) 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法
KR101455919B1 (ko) * 2013-01-18 2014-11-03 주식회사 엘지실트론 웨이퍼 양면 연마 장치의 정반 구조
US20170232573A1 (en) * 2016-02-12 2017-08-17 Kabushiki Kaisha Toshiba Polishing member and semiconductor manufacturing method
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
US10857648B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US10857647B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10777418B2 (en) * 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10861702B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
JP7273796B2 (ja) * 2017-08-25 2023-05-15 スリーエム イノベイティブ プロパティズ カンパニー 表面突起研磨パッド
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
CN108381331B (zh) * 2018-03-22 2020-02-18 大连理工大学 一种平面零件全局修形加工装置和方法
US11298794B2 (en) 2019-03-08 2022-04-12 Applied Materials, Inc. Chemical mechanical polishing using time share control
CN112548845B (zh) * 2021-02-19 2021-09-14 清华大学 一种基板加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002471A (ko) * 1999-06-15 2001-01-15 고석태 화학적 기계적 폴리싱 장치용 폴리싱 패드의 그루브 패턴
CN101014446A (zh) * 2004-07-21 2007-08-08 尼欧派德技术公司 制造化学机械平面化(cmp)垫中的原位凹槽的方法以及新颖的cmp垫设计
US20100009601A1 (en) * 2008-07-09 2010-01-14 Iv Technologies Co., Ltd. Polishing pad, polishing method and method of forming polishing pad

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5842910A (en) * 1997-03-10 1998-12-01 International Business Machines Corporation Off-center grooved polish pad for CMP
KR100314866B1 (ko) 1999-10-05 2001-11-17 김진우 다양한 표면 그루브패턴을 갖는 연마패드
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US7252582B2 (en) * 2004-08-25 2007-08-07 Jh Rhodes Company, Inc. Optimized grooving structure for a CMP polishing pad
JP2007007771A (ja) * 2005-06-30 2007-01-18 Mitsubishi Materials Techno Corp 研磨パット及び研磨機
US7306507B2 (en) 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window
US20070197132A1 (en) * 2006-02-15 2007-08-23 Applied Materials, Inc. Dechuck using subpad with recess
US7234224B1 (en) 2006-11-03 2007-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Curved grooving of polishing pads
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002471A (ko) * 1999-06-15 2001-01-15 고석태 화학적 기계적 폴리싱 장치용 폴리싱 패드의 그루브 패턴
CN101014446A (zh) * 2004-07-21 2007-08-08 尼欧派德技术公司 制造化学机械平面化(cmp)垫中的原位凹槽的方法以及新颖的cmp垫设计
US20100009601A1 (en) * 2008-07-09 2010-01-14 Iv Technologies Co., Ltd. Polishing pad, polishing method and method of forming polishing pad

Also Published As

Publication number Publication date
SG11201503496YA (en) 2015-06-29
US20150298287A1 (en) 2015-10-22
KR102148050B1 (ko) 2020-10-14
JP2015533668A (ja) 2015-11-26
KR20150082463A (ko) 2015-07-15
JP6336997B2 (ja) 2018-06-06
CN104781913A (zh) 2015-07-15
TWI633970B (zh) 2018-09-01
WO2014074521A1 (en) 2014-05-15
TW201429621A (zh) 2014-08-01
US9687956B2 (en) 2017-06-27

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