CN104779328B - Light emitting diode construction - Google Patents
Light emitting diode construction Download PDFInfo
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- CN104779328B CN104779328B CN201410014540.5A CN201410014540A CN104779328B CN 104779328 B CN104779328 B CN 104779328B CN 201410014540 A CN201410014540 A CN 201410014540A CN 104779328 B CN104779328 B CN 104779328B
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- gallium nitride
- aluminum gallium
- semiconductor layer
- emitting diode
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- 238000010276 construction Methods 0.000 title claims abstract description 54
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 113
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 90
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 238000000605 extraction Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 abbreviation ITO) Chemical compound 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of light emitting diode construction.Light emitting diode construction includes substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer.N type semiconductor layer is configured on substrate.Luminescent layer is suitable to send main emission wavelength to the light between 490 nms and to be configured on n type semiconductor layer between 365 nms.P type semiconductor layer is configured on luminescent layer, and including p-type aluminum gallium nitride.The thickness of p-type aluminum gallium nitride accounts for more than the 85% of the thickness of overall p type semiconductor layer.
Description
Technical field
The invention relates to a kind of semiconductor structure, and in particular to a kind of light emitting diode construction.
Background technology
With the progress of semiconductor technologies, light emitting diode now has been equipped with the output of high brightness, plus luminous two
It is aobvious that pole pipe has the advantages that power saving, small volume, low voltage drive and not mercurous, therefore light emitting diode have been widely used in
Show the field such as device and illumination.In general, light emitting diode uses wide bandgap semiconductor materials, such as gallium nitride（GaN）Deng material,
To be manufactured.However, when the luminescent layer of light emitting diode releases nearly UV light or blue light, the p-type that is formed using gallium nitride
Semiconductor layer meeting absorbing wavelength is about the light of 365~490 nms or so, i.e., can absorb nearly UV light and blue light, and then is influenceed overall
The light extraction efficiency of light emitting diode.
The content of the invention
The present invention provides a kind of light emitting diode construction, and it has preferable light extraction efficiency.
The light emitting diode construction of the present invention, it includes substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer.N
Type semiconductor layer is configured on substrate.Luminescent layer is suitable to send main emission wavelength between 365 nms to the light between 490 nms
And it is configured on n type semiconductor layer.P type semiconductor layer is configured on luminescent layer, and including p-type aluminum gallium nitride.P-type aluminium nitride
The thickness of gallium layer accounts for more than the 85% of the thickness of overall p type semiconductor layer.
In one embodiment of this invention, above-mentioned p type semiconductor layer is p-type aluminum gallium nitride.
In one embodiment of this invention, above-mentioned p type semiconductor layer also includes p-type gallium nitride layer, is configured at p-type nitridation
On gallium aluminium layer.The thickness of p-type gallium nitride layer accounts for less than the 15% of the thickness of overall p type semiconductor layer.
In one embodiment of this invention, above-mentioned p-type aluminum gallium nitride includes the first p-type aluminum gallium nitride and second
P-type aluminum gallium nitride.Aluminium content in first p-type aluminum gallium nitride is different from the aluminium content in the second p-type aluminum gallium nitride.
In one embodiment of this invention, the first above-mentioned p-type aluminum gallium nitride is located at the second p-type aluminum gallium nitride and hair
Between photosphere, and the aluminium content in the first p-type aluminum gallium nitride is more than the aluminium content in the second p-type aluminum gallium nitride.
In one embodiment of this invention, the material of the first above-mentioned p-type aluminum gallium nitride is AlxGa1-xN, and x is
0.09~0.2.
In one embodiment of this invention, the material of the second above-mentioned p-type aluminum gallium nitride is AlyGa1-yN, and y is
0.01~0.15.
In one embodiment of this invention, the thickness of the second above-mentioned p-type aluminum gallium nitride is more than the first p-type aluminium gallium nitride alloy
The thickness of layer.
In one embodiment of this invention, the p-type doping concentration in the first above-mentioned p-type aluminum gallium nitride is more than the 2nd P
The p-type doping concentration of type aluminum gallium nitride.
In one embodiment of this invention, above-mentioned p type semiconductor layer also includes p-type aluminum indium gallium nitride layer, is configured at p-type
Between aluminum gallium nitride and luminescent layer.
In one embodiment of this invention, above-mentioned n type semiconductor layer is n type gallium nitride layer.
In one embodiment of this invention, above-mentioned light emitting diode construction, in addition to N-type electrode and P-type electrode.N
Type electrode configuration is electrically connected with the n type semiconductor layer not covered by luminescent layer, and with n type semiconductor layer.P-type electrode is matched somebody with somebody
It is placed on p type semiconductor layer, and is electrically connected with p type semiconductor layer.
In one embodiment of this invention, above-mentioned light emitting diode construction also includes transparency conducting layer, is configured at p-type half
In conductor layer.
Based on above-mentioned, because the thickness of the p-type aluminum gallium nitride of the present invention accounts for the 85% of the thickness of overall p type semiconductor layer
More than, therefore p type semiconductor layer can be reduced and absorb nearly UV light or blue light that luminescent layer is sent.Consequently, it is possible to the present invention
Light emitting diode construction can have preferable light extraction efficiency.
For features described above of the invention and advantage can be become apparent, special embodiment below, and accompanying drawing appended by cooperation
It is described in detail below.
Brief description of the drawings
Fig. 1 is shown as a kind of diagrammatic cross-section of light emitting diode construction of one embodiment of the invention；
Fig. 2 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention；
Fig. 3 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention；
Fig. 4 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention；
Fig. 5 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention；
Fig. 6 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.
Description of reference numerals：
100a、100b、100c、100d、100e、100f：Light emitting diode construction；
110：Substrate；
120：N type semiconductor layer；
130：Luminescent layer；
140a、140b、140c、140d、140e：P type semiconductor layer；
142a、142b、142d：P-type aluminum gallium nitride；
142c1、142e1：First p-type aluminum gallium nitride；
142c2、142e2：Second p-type aluminum gallium nitride；
144b：P-type gallium nitride layer；
144d、144e：P-type aluminum indium gallium nitride layer；
150：N-type electrode；
160：P-type electrode；
170：Transparency conducting layer；
T1、T2：Thickness.
Embodiment
Fig. 1 is shown as a kind of diagrammatic cross-section of light emitting diode construction of one embodiment of the invention.It refer to Fig. 1,
In the present embodiment, light emitting diode construction 100a includes substrate 110, n type semiconductor layer 120, luminescent layer 130 and p-type half
Conductor layer 140a.N type semiconductor layer 120 is configured on substrate 110.Luminescent layer 130 is suitable to send main emission wavelength between 365
Nm is to the light between 490 nms and is configured on n type semiconductor layer 120.P type semiconductor layer 140a is configured at luminescent layer 130
On, and including p-type aluminum gallium nitride 142a.P-type aluminum gallium nitride 142a thickness accounts for overall p type semiconductor layer 140a thickness
More than 85%.
Specifically, in the present embodiment, substrate 110 is, for example, sapphire substrate, and luminescent layer 130 is, for example, to nitrogenize
The quantum well structures of gallium/InGaN, but be not limited thereto.N type semiconductor layer 120 be located at substrate 110 and luminescent layer 130 it
Between, and a part for n type semiconductor layer 120 is exposed to outside luminescent layer 130.Herein, n type semiconductor layer 120 is specially N-type nitrogen
Change gallium layer.As shown in figure 1, the p type semiconductor layer 140a of the present embodiment is specially p-type aluminum gallium nitride 142a, the P of flood is implied that
Type semiconductor layer 140a is by homogenous material, i.e. aluminium gallium nitride alloy, is formed.It is preferred that p-type aluminum gallium nitride 142a thickness is
30 nms to 100 nms.In addition, the light emitting diode construction 100a of the present embodiment also includes N-type electrode 150 and P-type electrode
160, wherein N-type electrode 150 is configured on the n type semiconductor layer 120 not covered by luminescent layer 130 and and n type semiconductor layer
120 are electrically connected with, and P-type electrode 160 is configured on p type semiconductor layer 140a and is electrically connected with p type semiconductor layer 140a.By
The configuration of said elements can learn that the light emitting diode construction 100a of the present embodiment is specially blue LED structure.
Because the present embodiment p type semiconductor layer 140a is specially p-type aluminum gallium nitride 142a, and p-type aluminum gallium nitride
142a material properties can't absorb nearly UV light or the light of blue optical band.Therefore, when luminescent layer 130 emits beam, light
Line by p type semiconductor layer 140a and will not directly can be absorbed.Consequently, it is possible to the light emitting diode construction 100a of the present embodiment
There can be preferable light extraction efficiency.
It should be noted that, following embodiments continue to use the element numbers and partial content of previous embodiment, wherein adopting herein
Be denoted by the same reference numerals identical or approximate element, and eliminates the explanation of constructed content.On clipped
Explanation refer to previous embodiment, it is no longer repeated for following embodiments.
Fig. 2 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.It refer to figure
2, the light emitting diode construction 100b and Fig. 1 of the present embodiment light emitting diode construction 100a are similar, but the two Main Differences it
Be in：The p type semiconductor layer 140b of the present embodiment is by p-type aluminum gallium nitride 142b and p-type gallium nitride layer 144b institutes group
Into wherein p-type gallium nitride layer 144b is configured on p-type aluminum gallium nitride 142b.Particularly, in the present embodiment, p-type aluminium nitride
Gallium layer 142b thickness accounts for more than the 85% of overall p type semiconductor layer 140b thickness, in other words, p-type gallium nitride layer 144b thickness
Degree accounts for less than the 15% of overall p type semiconductor layer 140b thickness.It is preferred that p-type gallium nitride layer 144b thickness be less than 10 how
Rice.
Due to the present embodiment p-type aluminum gallium nitride 142b thickness account for the 85% of overall p type semiconductor layer 140b thickness with
On, and p-type aluminum gallium nitride 142b material properties can't absorb the light of blue optical band.According to Beer-Lambert law
（Beer–Lambert law）It can learn, when a branch of collimated monochromatic ligth is perpendicular through a certain uniformly non-scatter extinction material,
Its absorbance is directly proportional to the concentration and absorber thickness of extinction material.Therefore when luminescent layer 130 emits beam, due to that can inhale
The thickness for receiving the p-type gallium nitride layer 144b of blue light wave is much smaller than p-type aluminum gallium nitride 142b thickness, therefore can reduce P
Type semiconductor layer 140b absorbs nearly the UV light or blue light that luminescent layer 130 is sent.Consequently, it is possible to the light emitting diode of the present embodiment
Structure 100b can have preferable light extraction efficiency.
Fig. 3 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.It refer to figure
3, the light emitting diode construction 100c and Fig. 1 of the present embodiment light emitting diode construction 100a are similar, but the two Main Differences it
Be in：The p type semiconductor layer 140c of the present embodiment is specially p-type aluminum gallium nitride, and wherein p-type aluminum gallium nitride includes first
P-type aluminum gallium nitride 142c1 and the second p-type aluminum gallium nitride 142c2, and the aluminium in the first p-type aluminum gallium nitride 142c1 contains
Amount is different from the aluminium content in the second p-type aluminum gallium nitride 142c2.It is preferred that the first p-type aluminum gallium nitride 142c1 is positioned at the
Between two p-type aluminum gallium nitride 142c2 and luminescent layer 130, and the aluminium content in the first p-type aluminum gallium nitride 142c1 is more than the
Aluminium content in two p-type aluminum gallium nitride 142c2.Herein, the first p-type aluminum gallium nitride 142c1 material is AlxGa1-xN, its
Middle x is 0.09~0.2.Second p-type aluminum gallium nitride 142c2 material is AlyGa1-yN, y therein are 0.01~0.15.The
Two p-type aluminum gallium nitride 142c2 thickness T2 is more than the first p-type aluminum gallium nitride 142c1 thickness T1.
It should be noted that p-type aluminum gallium nitride can reduce extinction, if but aluminium content in p-type aluminum gallium nitride it is too high,
More epitaxy defect can cause the heat inside the loss of compound carrier and increase light emitting diode construction.Furthermore p-type nitrogen
An other influence can be caused by changing the aluminium content increase in gallium aluminium layer, and being can be so that p-type aluminum gallium nitride resistance increases and made
It is more difficult to obtain electrode manufacture.Therefore, the light emitting diode construction 100c of the present embodiment passes through the first P close to luminescent layer 130
Type aluminum gallium nitride 142c1, its aluminium content is high, band gap（bandgap）Can be bigger, the effect of electronic blocking is relatively good, can incite somebody to action
The electronic bomb for the luminescent layer 130 not fallen into is postbacked in photosphere 130, to increase the efficiency of light.In addition, the first p-type aluminum gallium nitride
142c1 thickness T1 is relatively thin, therefore can reduce the epitaxy defect caused by the aluminium of high content.
In addition, the p-type doping concentration in the first p-type aluminum gallium nitride 142c1 of the present embodiment is more than the second p-type aluminium nitride
Gallium layer 142c2 p-type doping concentration.Wherein, p-type is adulterated can provide more hole more, and the first p-type aluminum gallium nitride
The closer luminescent layers 130 of 142c1, hole are easily accessible luminescent layer 130, hole is met and is connect in luminescent layer 130 with electronics
Close, just discharged in the form of photon.
Fig. 4 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.It refer to figure
4, the light emitting diode construction 100d and Fig. 1 of the present embodiment light emitting diode construction 100a are similar, but the two Main Differences it
Be in：The p type semiconductor layer 140d of the present embodiment is by p-type aluminum gallium nitride 142d and p-type aluminum indium gallium nitride layer 144d
Formed, wherein p-type aluminum indium gallium nitride layer 144d is configured between p-type aluminum gallium nitride 142d and luminescent layer 130.In this implementation
In example, p-type aluminum indium gallium nitride layer 144d can slow down material lattice between p-type aluminum gallium nitride 142d and luminescent layer 130 and mismatch
Phenomenon, light emitting diode construction 100d can be reduced in stress caused by epitaxy.
Fig. 5 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.It refer to figure
5, the light emitting diode construction 100e and Fig. 1 of the present embodiment light emitting diode construction 100a are similar, but the two Main Differences it
Be in：The p type semiconductor layer 140e of the present embodiment is by the first p-type aluminum gallium nitride 142e1, the second p-type aluminum gallium nitride
142e2 and p-type aluminum indium gallium nitride layer 144e are formed.Aluminium content in first p-type aluminum gallium nitride 142e1 is different from second
Aluminium content in p-type aluminum gallium nitride 142e2, it is preferred that the first p-type aluminum gallium nitride 142e1 material is AlxGa1-xN, its
Middle x is 0.09~0.2, and the second p-type aluminum gallium nitride 142e2 material is AlyGa1-yN, y therein are 0.01~0.15.
It is different from the second p-type aluminum gallium nitride 142e2 aluminium content using the first p-type aluminum gallium nitride 142e1, extinction can be avoided,
The problem of epitaxy defect and high resistance can be reduced again simultaneously.First p-type aluminum gallium nitride 142e1 is configured at the second p-type aluminium nitride
Between gallium layer 142e2 and p-type aluminum indium gallium nitride layer 144e, and p-type aluminum indium gallium nitride layer 144e directly contacts luminescent layer 130.P-type
It is unmatched existing that aluminum indium gallium nitride layer 144e can slow down material lattice between the first p-type aluminum gallium nitride 142e1 and luminescent layer 130
As light emitting diode construction 100e can be reduced in stress caused by epitaxy.
Fig. 6 is shown as a kind of diagrammatic cross-section of light emitting diode construction of another embodiment of the present invention.It refer to figure
6, the light emitting diode construction 100f and Fig. 1 of the present embodiment light emitting diode construction 100a are similar, but the two Main Differences it
Be in：The light emitting diode construction 100f of the present embodiment also includes transparency conducting layer 170, and wherein transparency conducting layer 170 configures
In on p type semiconductor layer 140a, and between p type semiconductor layer 140a and P-type electrode 160.P type semiconductor layer 140a can lead to
Cross transparency conducting layer 170 and form good Ohmic contact with P-type electrode 160（ohmic contact）.Herein, transparency conducting layer
170 material is, for example, indium tin oxide（Indium tin oxide, abbreviation ITO）, indium-zinc oxide（indium zinc
Oxide, abbreviation IZO）, zinc oxide（Zinc oxide, abbreviation ZnO）, indium tin zinc oxide（Indium tin zinc oxide,
Abbreviation ITZO）, aluminium tin-oxide（Aluminum tin oxide, abbreviation ATO）, aluminium zinc oxide（aluminum zinc
Oxide, abbreviation AZO）Or other appropriate electrically conducting transparent materials.
In summary, because the thickness of the p-type aluminum gallium nitride of the present invention accounts for the 85% of the thickness of overall p type semiconductor layer
More than, therefore p type semiconductor layer can be reduced and absorb nearly UV light or blue light that luminescent layer is sent.Consequently, it is possible to the present invention
Light emitting diode construction can have preferable light extraction efficiency.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (11)
- A kind of 1. light emitting diode construction, it is characterised in that including：Substrate；N type semiconductor layer, it is configured on the substrate；Luminescent layer, suitable for sending main emission wavelength between 365 nms to the light between 490 nms, and it is configured at the N-type and partly leads On body layer；AndP type semiconductor layer, it is configured on the luminescent layer, and includes the thickness of p-type aluminum gallium nitride, wherein the p-type aluminum gallium nitride Degree accounts for more than the 85% of the thickness of the overall p type semiconductor layer,Wherein, the p-type aluminum gallium nitride includes the first p-type aluminum gallium nitride and the second p-type aluminum gallium nitride, and the first P Aluminium content in type aluminum gallium nitride is different from the aluminium content in the second p-type aluminum gallium nitride,Wherein, the first p-type aluminum gallium nitride is located between the second p-type aluminum gallium nitride and the luminescent layer, and first p-type Aluminium content in aluminum gallium nitride is more than the aluminium content in the second p-type aluminum gallium nitride,Wherein, the p-type dopant concentration in the first p-type aluminum gallium nitride is more than the p-type admixture in the second p-type aluminum gallium nitride Concentration.
- 2. light emitting diode construction according to claim 1, it is characterised in that the p type semiconductor layer is the p-type aluminium nitride Gallium layer.
- 3. light emitting diode construction according to claim 1, it is characterised in that the p type semiconductor layer also includes p-type and nitrogenized Gallium layer, it is configured on the p-type aluminum gallium nitride, and the thickness of the p-type gallium nitride layer accounts for the thickness of the overall p type semiconductor layer Less than 15%.
- 4. light emitting diode construction according to claim 1, it is characterised in that the material of the first p-type aluminum gallium nitride For AlxGa1-xN, wherein x are 0.09~0.2.
- 5. light emitting diode construction according to claim 1, it is characterised in that the material of the second p-type aluminum gallium nitride For AlyGa1-yN, y therein are 0.01~0.15.
- 6. light emitting diode construction according to claim 1, it is characterised in that the thickness of the second p-type aluminum gallium nitride More than the thickness of the first p-type aluminum gallium nitride.
- 7. light emitting diode construction according to claim 1, it is characterised in that the p-type in the first p-type aluminum gallium nitride Doping concentration is more than the p-type doping concentration of the second p-type aluminum gallium nitride.
- 8. light emitting diode construction according to claim 1, it is characterised in that the p type semiconductor layer also includes p-type and nitrogenized Aluminium indium gallium layer, is configured between the p-type aluminum gallium nitride and the luminescent layer.
- 9. light emitting diode construction according to claim 1, it is characterised in that the n type semiconductor layer is n type gallium nitride Layer.
- 10. light emitting diode construction according to claim 1, it is characterised in that also include：N-type electrode, it is configured on the n type semiconductor layer not covered by the luminescent layer, and electrically connects with the n type semiconductor layer Connect；AndP-type electrode, it is configured on the p type semiconductor layer, and is electrically connected with the p type semiconductor layer.
- 11. light emitting diode construction according to claim 1, it is characterised in that also include：Transparency conducting layer, it is configured on the p type semiconductor layer.
Priority Applications (3)
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| CN201810016160.3A CN108054255B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
| CN201410014540.5A CN104779328B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode construction |
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| US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
| CN102751393A (en) * | 2011-04-20 | 2012-10-24 | 新世纪光电股份有限公司 | Light emitting diode structure |
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| JP3567790B2 (en) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
| KR20100023960A (en) * | 2007-06-15 | 2010-03-04 | 로무 가부시키가이샤 | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor |
| JP4341702B2 (en) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
| WO2011102411A1 (en) * | 2010-02-19 | 2011-08-25 | シャープ株式会社 | Nitride semiconductor light-emitting element and method for producing same |
| CN103137807A (en) * | 2013-02-22 | 2013-06-05 | 中国科学院半导体研究所 | Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof |
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| US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
| CN102751393A (en) * | 2011-04-20 | 2012-10-24 | 新世纪光电股份有限公司 | Light emitting diode structure |
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| CN104779328A (en) | 2015-07-15 |
| CN107968139B (en) | 2021-10-01 |
| CN107968139A (en) | 2018-04-27 |
| CN108054255A (en) | 2018-05-18 |
| CN108054255B (en) | 2020-10-09 |
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