TWI762660B - Semiconductor structure - Google Patents

Abstract

A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising Al_x In_y Ga_1-x-y N layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The Al_x In_y Ga_1-x-y N layers stacked on the light emitting layer, where 0＜x＜1, 0≤y＜1, and 0＜x+y＜1, and the GaN based layer interposed between two of the Al_x In_y Ga_1-x-y N layers, and the ohmic contact layer is disposed on the Al_x In_y Ga_1-x-y N layers.

Description

semiconductor structure

The present invention relates to a semiconductor structure, and more particularly, to a semiconductor structure including a gallium nitride based material.

In recent years, the application of light emitting diodes (LEDs) has become more and more extensive, and they have become an indispensable and important component in daily life, and light emitting diodes are expected to replace today's lighting equipment and become a new generation of light in the future. Solid-state lighting components, so the development of light-emitting diodes with high energy saving, high efficiency and higher power will be the future trend. Nitride LEDs have become one of the most emerging optoelectronic semiconductor materials due to their small size, no mercury pollution, high luminous efficiency and long life. Become a potential light-emitting diode material.

In general, gallium nitride based semiconductors have been widely used for blue/green light emitting diodes. The active layer of the light-emitting device generally includes a well layer and a barrier layer, and the light-emitting device including the well layer of InGaN can be applied to emit near-ultraviolet light.

Since the light emitted to the outside at the well layer passes through the barrier layer and the contact layer, a plurality of semiconductor layers are located on the transmission path of the light. Therefore, the light absorbance and conductivity of the semiconductor layer need to be controlled.

The present invention provides a semiconductor structure with high luminous efficiency and high conductivity.

In order to achieve the above implementation purpose, the semiconductor structure in an embodiment of the present invention includes a first-type doped semiconductor layer, a light-emitting layer, a plurality of _{AlxInyGa1 -xyN layers} , at least one GaN-based layer, and an ohmic contact layer of the second type doped semiconductor layer. The light-emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light-emitting layer. A plurality of _{AlxInyGa1 - xyN} layers are stacked on the light-emitting layer, wherein x and y satisfy the values of 0<x<1, 0≤y<1, and 0<x+y<1, and the GaN-based layer A plurality of _{AlxInyGa1 -xyN layers} are interposed therebetween, and an ohmic contact layer is disposed on the plurality of _{AlxInyGa1 -xyN layers} .

In an embodiment of the present invention, the above-mentioned _{AlxInyGa1 -xyN layers} include an AlInGaN-based stress control layer and an AlInGaN-based carrier blocking layer, and the AlInGaN-based stress control layer is disposed on the light-emitting layer and AlInGaN-based carrier blocking layer.

In an embodiment of the present invention, the concentration of the second-type dopant doped in the above-mentioned AlInGaN-based stress control layer is higher than 10 ¹⁹ cm ⁻³ .

In an embodiment of the present invention, the above-mentioned plurality of _{AlxInyGa1 -xyN layers} include a first AlInGaN-based layer disposed on the light-emitting layer. The second AlInGaN-based layer is disposed on the first AlInGaN-based layer. The first AlInGaN-based layer is doped with carbon.

In an embodiment of the present invention, the carbon concentration of the above-mentioned first AlInGaN-based layer doped is greater than 5×10 ¹⁷ cm ⁻³ .

In an embodiment of the present invention, the doped hydrogen concentration of the second AlInGaN-based layer is greater than 10 ¹⁸ cm ^-3 .

In an embodiment of the present invention, the above-mentioned light-emitting layer includes a first-type dopant with a concentration greater than 10 ¹⁷ cm ⁻³ .

In an embodiment of the present invention, the above-mentioned light-emitting layer includes a multiple quantum well structure, the multiple quantum well structure includes a plurality of well layers and a plurality of barrier layers stacked alternately, and a plurality of _{AlxInyGa1 - xyN} The indium concentration of the layers is less than the indium concentration of each well layer in the multiple quantum well structure.

In an embodiment of the present invention, the above-mentioned GaN-based layer includes a second-type dopant having a first concentration, and the plurality of _{AlxInyGa1 -xyN layers} include a second-type dopant having a second concentration, And the first concentration is greater than the second concentration.

In an embodiment of the present invention, the above-mentioned semiconductor structure further includes a substrate. The first-type doped semiconductor layer is disposed on the substrate and is interposed between the light-emitting layer and the substrate.

In an embodiment of the present invention, the above-mentioned semiconductor structure further includes a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer.

In order to achieve the above implementation purpose, the semiconductor structure in an embodiment of the present invention includes a first-type doped semiconductor layer, a light-emitting layer, a first AlInGaN-based layer, a second AlInGaN-based layer, at least one GaN-based layer, and an ohmic contact layer The second type doped semiconductor layer. The light-emitting layer is disposed on the first-type doped semiconductor layer, and the light-emitting layer includes silicon with a concentration greater than 10 ¹⁷ cm ^-3 . The second-type doped semiconductor layer is disposed on the light-emitting layer. The first AlInGaN-based layer is disposed on the light-emitting layer and doped with carbon. The second AlInGaN-based layer is disposed on the first AlInGaN-based layer, and the GaN-based layer is interposed between the first AlInGaN-based layer and the second AlInGaN-based layer. The ohmic contact layer is disposed on the second AlInGaN-based layer.

In an embodiment of the present invention, the carbon concentration of the above-mentioned first AlInGaN-based layer doped is greater than 5×10 ¹⁷ cm ⁻³ .

In an embodiment of the present invention, the doped hydrogen concentration of the second AlInGaN-based layer is greater than 10 ¹⁸ cm ^-3 .

In an embodiment of the present invention, the above-mentioned light-emitting layer includes a multiple quantum well structure, and the multiple quantum well structure includes a plurality of well layers and a plurality of barrier layers stacked alternately, and the indium concentration of the first AlInGaN-based layer is smaller than the multiple quantum well structure. The indium concentration of each well layer in the well structure.

In an embodiment of the present invention, the light-emitting layer includes a multiple quantum well structure, and the multiple quantum well structure includes a plurality of well layers and a plurality of barrier layers stacked alternately, and the indium concentration of the second AlInGaN-based layer is smaller than the multiple quantum well structure. The indium concentration of each well layer in the well structure.

In an embodiment of the present invention, the above-mentioned GaN-based layer includes a second-type dopant having a first concentration, and the plurality of _{AlxInyGa1 -xyN layers} include a second-type dopant having a second concentration, And the first concentration is greater than the second concentration.

In an embodiment of the present invention, the above-mentioned semiconductor structure further includes a substrate. The first-type doped semiconductor layer is disposed on the substrate and is interposed between the light-emitting layer and the substrate.

In an embodiment of the present invention, the above-mentioned semiconductor structure further includes a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer.

Based on the above, the semiconductor structure according to the embodiment of the present invention has at least the following advantages. In the embodiment of the present invention, the GaN-based layer is between two of the plurality of _{AlxInyGa1 -xyN layers} on the light-emitting layer in the semiconductor structure, and the ohmic contact layer is disposed on the plurality of _AlxIn layers _y Ga _1-xy N layer. Therefore, when the light-emitting layer emits light, the light transmittance and conductivity of the second-type doped semiconductor layer including the GaN-based layer and the ohmic contact layer can be increased to improve the light-emitting efficiency of the semiconductor structure.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

Hereinafter, the preferred embodiments of the present invention will be described in detail by adding reference numerals and illustrated in the drawings. Wherever possible, identical or similar components will be shown with the same reference numerals in the drawings.

In the description of the following embodiments, it should be understood that when it is indicated that a layer (or film) or a structure is disposed "on" or "under" another substrate, another layer (or film), or another structure, it can be "directly "Disposed in an "indirect" manner on another substrate, layer (or film), or another structure, or with one or more intervening layers in between.

In an embodiment of the present invention, a semiconductor structure for configuring a light-emitting element is provided, and the light-emitting efficiency and conductivity of the semiconductor structure are improved. In other words, the semiconductor structure is a light-emitting semiconductor structure, and the light-emitting semiconductor element has good light-emitting efficiency in a spectrum such as blue light or near-ultraviolet light.

FIG. 1 is a schematic cross-sectional view of a semiconductor structure according to a first embodiment of the present invention. Referring to FIG. 1 , the semiconductor structure 100 includes a first-type doped semiconductor layer 110 , a light-emitting layer 120 and a second-type doped semiconductor layer 130 . The light emitting layer 120 is disposed on the first type doped semiconductor layer 110 , and the second type doped semiconductor layer 130 is disposed on the light emitting layer 120 . The second-type doped semiconductor layer 130 includes _{AlxInyGa1 - xyN} layers 132A, 132B, a GaN-based layer 134 and an ohmic contact layer 136, wherein x and y series satisfy 0<x<1, 0≤y<1 and a value of 0<x+y<1. The _{AlxInyGa1 -xyN layers} 132A and 132B are stacked on the light-emitting layer 120, and the GaN-based layer 134 is interposed between the _{AlxInyGa1 -xyN layer} 132A and the _{AlxInyGa1 -xyN layer} 132B and the ohmic contact layer 136 is disposed on the _{AlxInyGa1 -xyN layers} 132A and 132B. In other words, in the semiconductor structure 100, the _{AlxInyGa1 -xyN layers} 132A, 132B are located between the light-emitting layer 120 and the ohmic contact layer 136, and the GaN-based layer 134 is located between the _{AlxInyGa1 - xyN} in the interface between layer 132A and _{AlxInyGa1 -xyN layer} 132B.

The GaN-based layer 134 can improve the electrical connection of the semiconductor structure 100 between the _{AlxInyGa1 -xyN layer} 132A and the _{AlxInyGa1 -xyN layer} 132B. In addition, the ohmic contact layer 136 is disposed on the _{AlxInyGa1 -xyN layers} 132A and 132B to improve the electrical connection of the semiconductor structure 100 and reduce the resistance of the semiconductor structure 100 . Therefore, the semiconductor structure 100 can provide high luminous efficiency and high conductivity.

In detail, the semiconductor structure 100 further includes a first electrode 150 disposed on the first type doped semiconductor layer 110 and a second electrode 160 disposed on the second type doped semiconductor layer 130 to provide the first type doping The semiconductor layer 110 is electrically connected to the second-type doped semiconductor layer 130 .

The semiconductor structure 100 further includes a substrate 140 , and the first-type doped semiconductor layer 110 is disposed between the substrate 140 and the light-emitting layer 120 . Specifically, the semiconductor structure 100 is connected by, for example, flip-chip or wire bonding, but the invention is not limited thereto.

In this embodiment, the substrate 140 is used to grow a GaN-based semiconductor structure, which includes a sapphire (sapphire) substrate, a silicon (Si) substrate, an aluminum nitride (AlN) substrate or a silicon carbide (SiC) substrate, but the present invention does not This is the limit.

The first-type doped semiconductor layer 110 in the first embodiment is, for example, an n-type doped semiconductor layer. Specifically, the first-type doped semiconductor layer 110 may be a semiconductor layer doped with an n-type dopant, such as a silicon-doped GaN-based semiconductor, and the thickness of the first-type doped semiconductor layer 110 is approximately 1 micrometer to 3 micrometers, but the present invention is not limited to this.

In this embodiment, the light emitting layer 120 in the semiconductor structure 100 includes the first type dopant with a concentration greater than 10 ¹⁷ cm ⁻³ . Specifically, the light-emitting layer 120 may be an n-type dopant-doped light-emitting layer, eg, silicon-doped, but the invention is not limited thereto. The wavelength of the light emitted by the light emitting layer 120 falls within the range of ultraviolet light, violet light, blue light to green light.

2 is a schematic cross-sectional view of the active layer in the semiconductor structure according to the first embodiment of the present invention. In detail, please refer to FIG. 2 , the light emitting layer 120 includes a multiple-quantum well structure (MQW), and the multiple-quantum well structure includes a plurality of well layers 124 and a plurality of barrier layers 122 stacked alternately, and the Al _x The indium concentration of one of the InyGa1 _{-xyN layer} 132A and the _{AlxInyGa1 -xyN layer} 132B is less than the indium concentration of each well layer 124 in the multiple quantum well structure, but the present invention does not This is the limit. Therefore, the forward bias of the semiconductor structure 100 can be reduced.

The second-type doped semiconductor layer 130 in the first embodiment is, for example, a p-type doped semiconductor layer. Specifically, the second-type doped semiconductor layer 130 may be a semiconductor layer doped with a p-type dopant, such as a magnesium-doped GaN-based semiconductor, and the second-type doped semiconductor layer 130 may be formed to a thickness of about It is 10 nanometers to 200 nanometers, but the present invention is not limited to this.

In the second-type doped semiconductor layer 130, the _{AlxInyGa1 -xyN layer} 132B is located on the _{AlxInyGa1 -xyN layer} 132A. The _{AlxInyGa1 -xyN layer 132A located between the light emitting layer 120 and the AlxInyGa1-xyN layer 132B is a} carbon-doped _{AlxInyGa1 -xyN layer} .

Specifically, the _{AlxInyGa1 -xyN layer} 132A is doped with a carbon concentration greater than 5×10 ¹⁷ cm ⁻³ , and the _{AlxInyGa1 -xyN layer} 132B is doped with a hydrogen concentration greater than 10 ¹⁸ cm ^-3 , but the present invention is not limited to this. Thus the concentration of holes can be increased.

In the second-type doped semiconductor layer 130 of the present embodiment, the GaN-based layer 134 includes a second-type dopant having a first concentration, and the _{AlxInyGa1 -xyN layers} 132A and 132B include a second-type dopant having a second concentration of the second type dopant, and the first concentration is greater than the second concentration. Specifically, the GaN-based layer 134 includes a high-concentration p-type dopant, and the _{AlxInyGa1 -xyN layers} 132A and 132B include a low-concentration p-type dopant, such as magnesium.

Moreover, the thickness of the GaN-based layer 134 can be formed to be about 1 nm to 50 nm, but the present invention is not limited thereto. Therefore, the GaN-based layer 134 can not only improve the electrical connection of the semiconductor structure 100 , but also can properly control the light absorption of the second-type doped semiconductor layer 130 .

In the second type doped semiconductor layer 130 of the present embodiment, the material of the ohmic contact layer 136 may be nickel (Ni), indium tin oxide (ITO), indium zinc oxide (IZO) ), gallium zinc oxide (GZO) and other materials to improve the electrical connection between the second electrode 160 and the rest of the semiconductor structure 100, but the invention is not limited thereto.

3 is a schematic cross-sectional view of an active layer in a semiconductor structure according to a second embodiment of the present invention. Referring to FIG. 3 , in this embodiment, the semiconductor structure 200 includes a substrate 240 , a first-type doped semiconductor layer 210 , a superlattice layer 270 , a light-emitting layer 220 and a second-type doped semiconductor layer 230 . The light emitting layer 220 is disposed on the first type doped semiconductor layer 210 , and the second type doped semiconductor layer 230 is disposed on the light emitting layer 220 . The second-type doped semiconductor layer 230 includes an AlInGaN-based stress control layer 238, an AlInGaN-based carrier blocking layer 231, an _{AlxInyGa1 -xyN layer 232A} , a GaN _- based layer 234, an _AlxInyGa1- The _xy N layer 232B and the ohmic contact layer 236, wherein x and y satisfy the values of 0<x<1, 0≤y<1, and 0<x+y<1. The _{AlxInyGa1 - xyN} layer 232B is disposed on the _{AlxInyGa1 -xyN layer} 232A, and the GaN _- based layer 234 is interposed between the _{AlxInyGa1 -xyN layer 232A} and the _AlxInyGa1 Between the _xyN layers 232B, the ohmic contact layer 236 is disposed on the _{AlxInyGa1 - xyN} layer 232B. In other words, in the semiconductor structure 200 in this embodiment, the _{AlxInyGa1 - xyN} layers 232A, 232B are located between the light-emitting layer 220 and the ohmic contact layer 236, and the GaN-based layer ₂₃₄ is located in the _AlxIny In the interface position between the Ga1- _xyN layer 232A and the _{AlxInyGa1 - xyN} layer 232B.

The substrate 240 in this embodiment is a substrate for growing a GaN-based semiconductor structure. The substrate 240 includes a sapphire substrate, a silicon substrate, an aluminum nitride substrate or a silicon carbide substrate, but the invention is not limited thereto.

The first-type doped semiconductor layer 210 in the second embodiment is, for example, an n-type doped semiconductor layer. Specifically, the first-type doped semiconductor layer 210 can be a semiconductor layer doped with an n-type dopant, such as a silicon-doped GaN-based semiconductor, and the first-type doped semiconductor layer 210 can be formed to a thickness of about It is 1 micrometer to 3 micrometers, but the present invention is not limited to this.

The superlattice layer 270 in the semiconductor structure 200 is disposed between the light-emitting layer 220 and the first-type doped semiconductor layer 210, and the superlattice layer 270 can be composed of InAlGaN with different compositions and alternately stacked for about 2-40 cycles layer, but the present invention is not limited to this. The superlattice layer 270 is formed beside the light emitting layer 220 to reduce the leakage current of the semiconductor structure 200 .

In this embodiment, the light emitting layer 220 in the semiconductor structure 200 includes the concentration of the first type dopant greater than 10 ¹⁷ cm ⁻³ . Specifically, the light-emitting layer 220 may be an n-type dopant-doped light-emitting layer, eg, silicon-doped, but the invention is not limited thereto. The wavelength of the light emitted by the light emitting layer 220 falls within the range of ultraviolet light, violet light, blue light to green light. In detail, the light emitting layer 220 includes a multiple quantum well structure, the multiple quantum well structure includes a plurality of well layers 224 and a plurality of barrier layers 222 stacked alternately, and the _{AlxInyGa1 -xyN layer} 232A and the _AlxIn The indium concentration of one of the _{yGa1 -} xyN layers 232B is less than the indium concentration of each well layer 224 in the multiple quantum well structure, but the invention is not limited thereto. Therefore, the forward bias of the semiconductor structure 200 can be reduced.

The AlInGaN-based stress control layer 238 is disposed between the light-emitting layer 220 and the AlInGaN-based carrier blocking layer 231 , and the AlInGaN-based stress control layer 238 is doped with a second-type dopant concentration higher than 10 ¹⁹ cm ⁻³ , specifically In other words, the AlInGaN-based stress control layer 238 is doped with a P-type dopant, and the P-type dopant is, for example, magnesium. Therefore, the stress control layer 238 on the light emitting layer 220 can reduce the lattice mismatch phenomenon between the well layer 224 and the barrier layer 222 in the light emitting layer 220 .

The AlInGaN-based carrier blocking layer 231 is disposed between the light-emitting layer 220 and the _{AlxInyGa1 -xyN layer} 232A to reduce lattice loss between the light-emitting layer 220 and the rest of the second-type doped semiconductor layer 230 match phenomenon.

In this embodiment, the first _{AlxInyGa1 -xyN layer} 232A is doped with carbon, and the _{AlxInyGa1 - xyN} layer 232B is doped with hydrogen. Specifically, the _{AlxInyGa1 -xyN layer} 232A is doped with a carbon concentration greater than 5×10 ¹⁷ cm ⁻³ , and the _{AlxInyGa1 - xyN} layer 232B is doped with a hydrogen concentration greater than 10 ¹⁸ cm ^-3 , but the present invention is not limited to this. Therefore, the concentration of holes can be increased.

In the second-type doped semiconductor layer 230 of the present embodiment, the GaN-based layer 234 includes a second-type dopant having a first concentration, and the _{AlxInyGa1 - xyN} layers 232A and 232B include a second-type dopant having a second concentration of the second type dopant, and the first concentration is greater than the second concentration. In detail, the GaN-based layer 234 includes a high-concentration p-type dopant, and the _{AlxInyGa1 - xyN} layers 232A and 232B include a low-concentration p-type dopant, such as magnesium.

Moreover, the ratio of the thickness of the GaN-based layer 234 to the total thickness of the second-type doped semiconductor layer 230 is less than or equal to 0.5, but the invention is not limited to this. Therefore, the GaN-based layer 234 can not only improve the electrical connection of the semiconductor structure 200 , but also properly control the light absorption of the second-type doped semiconductor layer 230 .

To sum up, the semiconductor structure according to the embodiment of the present invention has at least the following advantages. In an embodiment of the present invention, the second-type doped semiconductor layer of the semiconductor package structure includes an _{AlxInyGa1 -xyN layer} and a GaN-based layer, and the GaN-based layer is interposed between the _{AlxInyGa1 -xyN layer} In between, the GaN-based layer and the _{AlxInyGa1 -xyN layer} are stacked on the light-emitting layer of the semiconductor structure, and the ohmic contact layer is disposed on the _{AlxInyGa1 -xyN layer} and the GaN-based layer. Therefore, when the light-emitting layer emits blue light or near-ultraviolet light, the _{AlxInyGa1 -xyN layer} can improve light transmittance and provide a carrier blocking function in the second-type doped semiconductor layer, and can be enhanced by GaN The system layer is used to increase the conductivity of the second-type doped semiconductor layer, so as to improve the luminous efficiency of the semiconductor structure.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the appended patent application.

100, 200‧‧‧Semiconductor structure 110, 210‧‧‧First type doped semiconductor layer 120, 220‧‧‧Light-emitting layer 122, 222‧‧‧Barrier layer 124, 224‧‧‧Well layer 130, 230‧ ‧‧Second-type doped semiconductor layers 132A, 132B, 232A, _{232B‧‧‧AlxInyGa1 - xyN} layers 134, 234‧‧‧GaN-based layers 136, 236‧‧‧ohmic contact layers 140, 240 ‧‧‧Substrate 150‧‧‧First electrode 160‧‧‧Second electrode 231‧‧‧Carrier blocking layer 238‧‧‧stress control layer 270‧‧‧Superlattice layer

FIG. 1 is a schematic cross-sectional view of a semiconductor structure according to a first embodiment of the present invention. 2 is a schematic cross-sectional view of the active layer in the semiconductor structure according to the first embodiment of the present invention. 3 is a schematic cross-sectional view of an active layer in a semiconductor structure according to a second embodiment of the present invention.

100‧‧‧Semiconductor Structure

110‧‧‧First type doped semiconductor layer

120‧‧‧Light Emitting Layer

130‧‧‧Type II doped semiconductor layer

132A, 132B‧‧‧Al _x In _y Ga _1-xy N layer

134‧‧‧GaN layer

136‧‧‧ohmic contact layer

140‧‧‧Substrate

150‧‧‧First electrode

160‧‧‧Second electrode

Claims (42)

A semiconductor structure, comprising: a first-type doped semiconductor layer; a light-emitting layer, disposed on the first-type doped semiconductor layer; a second-type doped semiconductor layer, disposed on the light-emitting layer, the second The type doped semiconductor layer includes: a plurality of _{AlxInyGa1 -xyN layers} stacked on the light-emitting layer, wherein 0<x<1, 0

y<1 and 0<x+y<1; at least one GaN-based layer interposed between two of the plurality of _{AlxInyGa1 -xyN layers} ; and an ohmic contact layer disposed on the on a plurality of _{AlxInyGa1 -xyN layers} , wherein the plurality of _{AlxInyGa1 -xyN layers} include an AlInGaN-based stress control layer and an AlGaN-based carrier blocking layer, the AlInGaN-based The stress control layer is arranged between the light-emitting layer and the AlGaN-based carrier blocking layer. The semiconductor structure of claim 1, wherein the AlInGaN-based stress control layer is doped with a second-type dopant concentration higher than 10 ¹⁹ cm ³ . The semiconductor structure of claim 1, wherein the plurality of _{AlxInyGa1 -xyN layers} further comprise: a first AlInGaN-based layer disposed on the light-emitting layer, the first AlInGaN-based layer doped with heterocarbon; and a second AlInGaN-based layer disposed on the first AlInGaN-based layer. The semiconductor structure of claim 3, wherein the first AlInGaN-based layer is doped with a carbon concentration greater than 5×10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 3, wherein the second AlInGaN-based layer is doped with a hydrogen concentration greater than 10 ¹⁸ cm ^-3 . The semiconductor structure of claim 1, wherein the light-emitting layer includes a first-type dopant with a concentration greater than 10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 1, wherein the light emitting layer includes a multiple quantum well structure including a plurality of well layers and a plurality of barrier layers stacked alternately, and the plurality of _AlxIn The indium concentration of one of the _{yGa1 -xyN} layers is less than the indium concentration of each of the well layers in the multiple quantum well structure. The semiconductor structure of claim 1, wherein the GaN-based layer includes a second-type dopant having a first concentration, and the plurality of _{AlxInyGa1 -xyN layers} include the second-type dopant having a second concentration The second type dopant, and the first concentration is greater than the second concentration. The semiconductor structure of claim 1, further comprising a substrate, wherein the first-type doped semiconductor layer is disposed on the substrate and is interposed between the light-emitting layer and the substrate. The semiconductor structure of claim 1, further comprising a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer. A semiconductor structure, comprising: a first-type doped semiconductor layer; a light-emitting layer disposed on the first-type doped semiconductor layer, the light-emitting layer comprising silicon with a concentration greater than 10 ¹⁷ cm ^-3 ; and a second-type doped semiconductor layer a hetero-semiconductor layer disposed on the light-emitting layer, the second-type doped semiconductor layer comprising: a first AlInGaN-based layer disposed on the light-emitting layer, the first AlInGaN-based layer doped with carbon; a second AlInGaN-based layer An AlInGaN-based layer disposed on the first AlInGaN-based layer; at least one GaN-based layer interposed between the first AlInGaN-based layer and the second AlInGaN-based layer; and an ohmic contact layer disposed on the on the second AlInGaN-based layer. The semiconductor structure of claim 11, wherein the first AlInGaN-based layer is doped with a carbon concentration greater than 5×10 ¹⁷ cm ³ . The semiconductor structure of claim 11, wherein the hydrogen concentration of the doping of the second AlInGaN-based layer is greater than 10 ¹⁸ cm ³ . The semiconductor structure of claim 11, wherein the light emitting layer includes a multiple quantum well structure including a plurality of well layers and a plurality of barrier layers alternately stacked, and the first AlInGaN-based layer The indium concentration of is less than the indium concentration of each of the well layers in the multiple quantum well structure. The semiconductor structure of claim 11, wherein the light emitting layer includes a multiple quantum well structure including a plurality of well layers and a plurality of barrier layers alternately stacked, and the second AlInGaN-based layer The indium concentration of is less than the indium concentration of each of the well layers in the multiple quantum well structure. The semiconductor structure of claim 11, wherein the GaN-based layer includes a second-type dopant having a first concentration, and the first or second AlInGaN-based layer includes The second type dopant has a second concentration, and the first concentration is greater than the second concentration. The semiconductor structure of claim 11, further comprising a substrate, wherein the first-type doped semiconductor layer is disposed on the substrate and is interposed between the light-emitting layer and the substrate. The semiconductor structure of claim 11, further comprising a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer. A semiconductor structure, comprising: a first-type doped semiconductor layer; a light-emitting layer, disposed on the first-type doped semiconductor layer; a second-type doped semiconductor layer, disposed on the light-emitting layer, the second The type doped semiconductor layer includes: a plurality of _{AlxInyGa1 -xyN layers} stacked on the light-emitting layer, wherein 0<x<1, 0

y<1 and 0<x+y<1; at least one GaN-based layer interposed between two of the plurality of _{AlxInyGa1 -xyN layers} ; and an ohmic contact layer disposed on the on a plurality of _{AlxInyGa1 -xyN layers} , wherein the plurality of _{AlxInyGa1 -xyN layers} include: a first AlInGaN-based layer disposed on the light-emitting layer, the first AlInGaN layer The system layer is doped with carbon; and a second AlInGaN system layer is disposed on the first AlInGaN system layer. The semiconductor structure of claim 19, wherein the plurality of _{AlxInyGa1 -xyN layers} further comprise: an AlInGaN-based stress control layer; and an AlGaN-based carrier blocking layer, the AlInGaN-based stress control layer The control layer is disposed between the light-emitting layer and the AlGaN-based carrier blocking layer, and the AlInGaN-based stress control layer is doped with a second-type dopant concentration higher than 10 ¹⁹ cm ⁻³ . The semiconductor structure of claim 19, wherein the doped carbon concentration of the first AlInGaN-based layer is greater than 5×10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 19, wherein the second AlInGaN-based layer is doped with a hydrogen concentration greater than 10 ¹⁸ cm ^-3 . The semiconductor structure of claim 19, wherein the light-emitting layer includes a first-type dopant at a concentration greater than 10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 19, wherein the light emitting layer includes a multiple quantum well structure including a plurality of well layers and a plurality of barrier layers alternately stacked, and the plurality of _AlxIn The indium concentration of one of the _{yGa1 -xyN} layers is less than the indium concentration of each of the well layers in the multiple quantum well structure. The semiconductor structure of claim 19, wherein the GaN-based layer includes a second-type dopant having a first concentration, and the plurality of _{AlxInyGa1 -xyN layers} includes the second concentration The second type dopant, and the first concentration is greater than the second concentration. The semiconductor structure of claim 19, further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light-emitting layer and the substrate. The semiconductor structure of claim 19, further comprising a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer. A semiconductor structure, comprising: a first-type doped semiconductor layer; a light-emitting layer, disposed on the first-type doped semiconductor layer; a second-type doped semiconductor layer, disposed on the light-emitting layer, the second The type doped semiconductor layer includes: a plurality of _{AlxInyGa1 -xyN layers} stacked on the light-emitting layer, wherein 0<x<1, 0

y<1 and 0<x+y<1; at least one GaN-based layer interposed between two of the plurality of _{AlxInyGa1 -xyN layers} ; and an ohmic contact layer disposed on the On a plurality of _{AlxInyGa1 -xyN layers} , wherein the light emitting layer includes a multiple quantum well structure, the multiple quantum well structure includes a plurality of well layers and a plurality of barrier layers stacked alternately, and the multiple quantum well structures are alternately stacked. The indium concentration of one of the _{AlxInyGa1 -xyN layers} is less than the indium concentration of each of the well layers in the multiple quantum well structure. The semiconductor structure of claim 28, wherein the plurality of _{AlxInyGa1 -xyN layers} include: an AlInGaN-based stress control layer; and an AlGaN-based carrier blocking layer, the AlInGaN-based stress control layer The layer is disposed between the light-emitting layer and the AlGaN-based carrier blocking layer, and the AlInGaN-based stress control layer is doped with a second-type dopant concentration higher than 10 ¹⁹ cm ³ . The semiconductor structure of claim 28, wherein the plurality of _{AlxInyGa1 -xyN layers} include: a first AlInGaN-based layer disposed on the light-emitting layer, and the first AlInGaN-based layer is doped carbon; and a second AlInGaN-based layer disposed on the first AlInGaN-based layer, wherein the first AlInGaN-based layer is doped with a carbon concentration greater than 5×10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 28, wherein the plurality of _{AlxInyGa1 -xyN layers} include: a first AlInGaN-based layer disposed on the light-emitting layer, and the first AlInGaN-based layer is doped carbon; and a second AlInGaN-based layer disposed on the first AlInGaN-based layer, wherein the second AlInGaN-based layer is doped with a hydrogen concentration greater than 10 ¹⁸ cm ⁻³ . The semiconductor structure of claim 28, wherein the light-emitting layer includes a first-type dopant at a concentration greater than 10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 28, wherein the GaN-based layer includes a second-type dopant having a first concentration, and the plurality of _{AlxInyGa1 -xyN layers} include the second concentration The second type dopant, and the first concentration is greater than the second concentration. The semiconductor structure of claim 28, further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light-emitting layer and the substrate. The semiconductor structure of claim 28, further comprising a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer. A semiconductor structure, comprising: a first-type doped semiconductor layer; a light-emitting layer, disposed on the first-type doped semiconductor layer; a second-type doped semiconductor layer, disposed on the light-emitting layer, the second The type doped semiconductor layer includes: a plurality of _{AlxInyGa1 -xyN layers} stacked on the light-emitting layer, wherein 0<x<1, 0

y<1 and 0<x+y<1; at least one GaN-based layer interposed between two of the plurality of _{AlxInyGa1 -xyN layers} ; and an ohmic contact layer disposed on the on a plurality of _{AlxInyGa1 -xyN layers} , wherein the GaN-based layer includes a second-type dopant having a first concentration, the plurality of _{AlxInyGa1 -xyN layers} includes a second-type dopant having a first concentration concentration of the second type dopant, and the first concentration is greater than the second concentration. The semiconductor structure of claim 36, wherein the plurality of _{AlxInyGa1 -xyN layers} include: an AlInGaN-based stress control layer; and an AlGaN-based carrier blocking layer, the AlInGaN-based stress control layer The layer is disposed between the light-emitting layer and the AlGaN-based carrier blocking layer, and the AlInGaN-based stress control layer is doped with a second-type dopant concentration higher than 10 ¹⁹ cm ³ . The semiconductor structure of claim 36, wherein the plurality of _{AlxInyGa1 -xyN layers} comprise: a first AlInGaN-based layer disposed on the light-emitting layer, and the first AlInGaN-based layer is doped carbon; and a second AlInGaN-based layer disposed on the first AlInGaN-based layer, wherein the first AlInGaN-based layer is doped with a carbon concentration greater than 5×10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 36, wherein the plurality of _{AlxInyGa1 -xyN layers} include: a first AlInGaN-based layer disposed on the light-emitting layer, and the first AlInGaN-based layer is doped carbon; and a second AlInGaN-based layer disposed on the first AlInGaN-based layer, wherein the second AlInGaN-based layer is doped with a hydrogen concentration greater than 10 ¹⁸ cm ⁻³ . The semiconductor structure of claim 36, wherein the light-emitting layer includes a first-type dopant at a concentration greater than 10 ¹⁷ cm ⁻³ . The semiconductor structure of claim 36, further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light-emitting layer and the substrate. The semiconductor structure of claim 36, further comprising a superlattice layer disposed between the light-emitting layer and the first-type doped semiconductor layer.

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