CN104769720B - Camera device, endoscope, the manufacture method of semiconductor device and semiconductor device - Google Patents
Camera device, endoscope, the manufacture method of semiconductor device and semiconductor device Download PDFInfo
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- CN104769720B CN104769720B CN201380055442.XA CN201380055442A CN104769720B CN 104769720 B CN104769720 B CN 104769720B CN 201380055442 A CN201380055442 A CN 201380055442A CN 104769720 B CN104769720 B CN 104769720B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/00064—Constructional details of the endoscope body
- A61B1/00071—Insertion part of the endoscope body
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/00064—Constructional details of the endoscope body
- A61B1/0011—Manufacturing of endoscope parts
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
- A61B1/051—Details of CCD assembly
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/12—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with cooling or rinsing arrangements
- A61B1/128—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with cooling or rinsing arrangements provided with means for regulating temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Surgery (AREA)
- Power Engineering (AREA)
- Medical Informatics (AREA)
- General Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Pathology (AREA)
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- Biomedical Technology (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Endoscopes (AREA)
Abstract
Camera device (1) has：Photographing element chip (10), overleaf (10SB) has the splice terminal (12) being connected with image pickup part (11) for it；Cable (40), it has the wire (41) being connected with image pickup part (11)；And wiring plate (30), it has the bonding electrodes (31) engaged with splice terminal (12) formed in central portion (30M), formed in extended portion (30S1, the terminal electrode (32) engaged with wire (41) 30S2), connect the wiring (33) of bonding electrodes (31) and terminal electrode (32), and formed and be formed without bonding electrodes (31), heat transfer pattern (35) in the region of terminal electrode (32) and wiring (33), by making extended portion (30S1, 30S2) bending and by the wiring plate (30) configuration in the perspective plane of photographing element chip (10).
Description
Technical field
The present invention relates to the camera device with photographing element chip, possesses the endoscope of above-mentioned camera device, with half
The manufacture method of the semiconductor device of conductor chip and above-mentioned semiconductor device, more particularly to photographing element chip and
The camera device for the wiring plate that signal cable is attached, the endoscope for possessing above-mentioned camera device, have and semiconductor element
The semiconductor device of wiring plate and the manufacture method of above-mentioned semiconductor device of chip connection.
Background technology
Camera device with photographing element chip is for example provided in forward end section of endoscope and used.In order to relax quilt
The pain of inspection person, it is important problem to make the chemical conversion of forward end section of endoscope thin footpath.
As shown in figure 1, having recorded a kind of camera device 101 in Japanese Unexamined Patent Publication 2011-217887 publications, it, which has, takes the photograph
Element chip 110, the block 120 as thermal component, the wiring plate 130 and signal cable for being provided with electronic component 139
140.Photographing element chip 110 has image pickup part 111 on positive 110SA, overleaf has multiple splice terminals on 110SB
(not shown).Splice terminal engages with the bonding electrodes (not shown) of wiring plate 130.Bonding electrodes via wiring (not shown) and
It is connected with the terminal electrode 132 on the wire 141 for being joined to signal cable 140.
Wiring plate 130 is made up of central portion 130M and extended portion 130S1,130S2, wherein central portion 130M and shooting
Element chip 110 is engaged, and extended portion 130S1,130S2 are extended from central portion 130M to both sides.Extended portion
130S1,130S2 are to inner side bending.Therefore, wiring plate 130 is accommodated in the extension space on the perspective plane of photographing element chip 110
Inside (in perspective plane) 110S.In camera device 101, heat caused by photographing element chip 110 via wiring plate 130 and
Transferred heat on block 120.
But camera device 101 is in the heat transmission function of the wiring plate 130 between photographing element chip 110 and block 120
When insufficient, it is possible to cause the temperature of photographing element chip 110 can rise and make image deterioration.
Possess signal pattern, power supply pattern in addition, having recorded one kind in Japanese Unexamined Patent Publication 2010-199352 publications and dissipate
The circuit substrate of thermal image.Radiating pattern is present in the region for removing signal pattern and power supply pattern, and is led with power supply pattern
It is logical.
But in the case that foregoing circuit substrate is on the camera device big for caloric value, it is possible to allow to from scattered
The heat of thermal image radiating is insufficient etc., is particularly being disposed in subminiature the taking the photograph of the important forward end section of endoscope of thin footpathization
As in device, it is not easy to directly apply.
Also, a kind of semiconductor device is disclosed in Japanese Unexamined Patent Publication 2012-38920 publications, it is in semiconductor substrate
On be connected to after flexible base board (flexible wiring board), in connecting portion potting resin and after hardening it, pass through bend it is flexible
Substrate and prevent the failure according to caused by stress.
But if the load that is born in curved substrate on connecting portion and resin of this semiconductor device is excessive,
It is possible to connecting portion can be made easily to come off, declines connection reliability.
The content of the invention
The invention problem to be solved
It is an object of the invention to provide a kind of excellent camera device of heat dissipation characteristics that can be disposed in narrow space,
The high semiconductor device of the endoscope for possessing above-mentioned camera device, the reliability that can be disposed in narrow space and above-mentioned half
The manufacture method of conductor device.
Means for solving the problems
The camera device of an embodiment of the invention possesses：Photographing element chip, it has image pickup part in front,
The back side has the splice terminal being connected via feed throughs with the image pickup part；Signal cable, it has and the image pickup part
The wire of connection；And wiring plate, it is formed by central portion and from multiple extended portions that the central portion is extended, and
Have：Formed the central portion bonding electrodes engage with the splice terminal, formation the extended portion with
The wiring and formation of the terminal electrode, the connection bonding electrodes and the terminal electrode of the wire engagement are not being formed
There is the heat transfer pattern in the region of the bonding electrodes, the terminal electrode and the wiring, by making the extended portion
Bending and by the wiring plate configuration in the perspective plane of the photographing element chip.
The endoscope of another embodiment of the present invention possesses：Insertion section, its leading section are equipped with camera device；Behaviour
Make portion, it is disposed in the base end side of the insertion section；And universal cable, it extends out from the operating portion, wherein, shooting
Device includes：Photographing element chip, its front there is image pickup part, overleaf with via feed throughs and with the image pickup part
The splice terminal of connection；Signal cable, it has the wire being connected with the image pickup part；And wiring plate, its by central portion and
Form, and have from multiple extended portions that the central portion is extended：Formed in the central portion and the engagement
The bonding electrodes of terminal engagement, formed the extended portion and wire engagement terminal electrode, be connected described in connect
The wiring of composite electrode and the terminal electrode and formed and be formed without the bonding electrodes, the terminal electrode and described
Heat transfer pattern in the region of wiring, by making the extended portion bending configure the wiring plate in the photographing element
In the perspective plane of chip.
The semiconductor device of another embodiment of the present invention possesses：Semiconductor element chip, it has the 1st interarea
With the 2nd interarea；Wiring plate, it is arranged on the 2nd interarea of the semiconductor element chip, is bent to partly lead from described
It integrally coincides with the semiconductor element chip when thickness direction of body element chip is overlooked；And resin, it is filled
In the 2nd interarea of the semiconductor element chip and being attached between the mounting surface of the 2nd interarea for the wiring plate
Space in, also, positioned at it is overall with described semiconductor element when overlooking the semiconductor element chip from the thickness direction
On the position that part chip coincides, formation of the resin from the space along the wiring plate has the periphery of the mounting surface
Overflowed on the thickness direction than direction of the mounting surface away from the 2nd interarea bending section on face.
The manufacture method of the semiconductor device of another embodiment of the present invention possesses：Wiring plate installation procedure, connecting up
2nd interarea of the side opposite with the 1st interarea of semiconductor element chip is installed on plate；Fixture installation procedure, in the wiring plate
Stationary fixture is installed on the face of the opposite side of mounting surface with being attached to the 2nd interarea；Wiring plate bending operation, it is described by making
Connect up plate benging and the wiring plate is located at from the semiconductor element core for linking the 1st interarea and the 2nd interarea
The entirety of the wiring plate is mutually overlapping with the semiconductor element chip when thickness direction of piece overlooks the semiconductor element chip
On the position of conjunction, and keep by the stationary fixture curved shape of the wiring plate；And resin filling work procedure, lead to
Cross and tree is filled in the space between the 2nd interarea of the semiconductor element chip and the mounting surface of the wiring plate
Fat, and make the resin in the space positioned at resin when overlooking the semiconductor element chip from the thickness direction
The position that coincides of entirety and the semiconductor element chip on, also, make the hardening of resin, work filled in the resin
In sequence, by according to more than 1st amount and loading that the 2nd amount is following fills the resin, making the resin from the sky
Between along the formation of the wiring plate have bending section on the outer peripheral face of the mounting surface on the thickness direction than described
Direction of the mounting surface away from the 2nd interarea is overflowed, wherein, the 1st amount is the resin to space filling 100%
Amount, the 2nd amount be to setting space filling 100% the resin amount, it is described setting space be by the mounting surface
The space between the mounting surface and the 2nd interarea when expanding to the profile of the semiconductor element chip.
Invention effect
According to the embodiment of the present invention, it is excellent that a kind of heat dissipation characteristics that can be disposed in narrow space can be provided
The high semiconductor device of camera device, the endoscope for possessing above-mentioned camera device, the reliability that can be disposed in narrow space
And the manufacture method of above-mentioned semiconductor device.
Brief description of the drawings
Fig. 1 is the stereogram of conventional camera device.
Fig. 2 is the stereogram of the camera device of the 1st embodiment.
Fig. 3 is the profile of the camera device of the 1st embodiment.
Fig. 4 is the top view at the back side of the photographing element chip of the camera device of the 1st embodiment.
Fig. 5 is the decomposing section for illustrating the manufacture method of the camera device of the 1st embodiment.
Fig. 6 is the top view of the 1st interarea of the wiring plate of the camera device of the 1st embodiment.
Fig. 7 is the top view of the 2nd interarea of the wiring plate of the camera device of the 1st embodiment.
Fig. 8 is the top view of the 1st interarea of the wiring plate of the camera device of the 2nd embodiment.
Fig. 9 is the top view of the 2nd interarea of the wiring plate of the camera device of the 2nd embodiment.
Figure 10 is the top view of the 1st interarea of the wiring plate of the camera device of the 3rd embodiment.
Figure 11 is the top view of the 2nd interarea of the wiring plate of the camera device of the 3rd embodiment.
Figure 12 is the top view of the 1st interarea of the wiring plate of the camera device of the 4th embodiment.
Figure 13 is the top view of the 2nd interarea of the wiring plate of the camera device of the 4th embodiment.
Figure 14 is the exploded perspective view of the camera device of the 4th embodiment.
Figure 15 is the profile of the camera device of the 5th embodiment.
Figure 16 is the profile of the camera device of the 6th embodiment.
Figure 17 is the outside drawing of the endoscope of the 7th embodiment.
Figure 18 is the structure chart of the semiconductor device of the 8th embodiment.
Figure 19 is by the enlarged drawing of the XIX parts surrounded in Figure 18 of the semiconductor device of the 8th embodiment.
Figure 20 is the semiconductor for showing the 8th embodiment from together with semiconductor element chip from Figure 18 XX directions
The wiring plate of device and the figure deployed.
Figure 21 is the figure in the space at the junction surface for the semiconductor device for schematically showing the 8th embodiment.
Figure 22 is the figure of the wiring plate installation procedure of the manufacture method for the semiconductor device for showing the 8th embodiment.
Figure 23 is the figure of the fixture installation procedure of the manufacture method for the semiconductor device for showing the 8th embodiment.
Figure 24 is the figure of the wiring plate bending operation of the manufacture method for the semiconductor device for showing the 8th embodiment.
Figure 25 is the figure of the resin filling work procedure of the manufacture method for the semiconductor device for showing the 8th embodiment.
Figure 26 is the fixture installation procedure of the manufacture method of the semiconductor device for the variation 1 for showing the 8th embodiment
Figure.
Figure 27 is the wiring plate bending operation of the manufacture method of the semiconductor device for the variation 1 for showing the 8th embodiment
Figure.
Figure 28 is the resin working procedure of coating of the manufacture method of the semiconductor device for the variation 1 for showing the 8th embodiment
Figure.
Figure 29 is the semiconductor element chip of the manufacture method of the semiconductor device for the variation 1 for showing the 8th embodiment
The figure of installation procedure.
Figure 30 is the structure chart of the semiconductor device of the variation 2 of the 8th embodiment.
Figure 31 is the wiring plate and semiconductor element chip of the semiconductor device for the variation 3 for showing the 8th embodiment
Exploded perspective view.
Figure 32 is to show to be mounted with partly to lead at the center of the wiring plate of the semiconductor device of the variation 3 of the 8th embodiment
The stereogram of the state of body element chip.
Figure 33 is the shape for showing to bend 4 positions of the wiring plate of the semiconductor device of the variation 3 of the 8th embodiment
The stereogram of state.
Figure 34 is the structure chart of the semiconductor device of the 9th embodiment.
Figure 35 is the figure of the reinforcement resin filling work procedure of the manufacture method for the semiconductor device for showing the 9th embodiment.
Figure 36 is the structure chart of the semiconductor device of the 10th embodiment.
Figure 37 is the figure of example for showing to use the semiconductor device of the 8th embodiment as camera device.
Figure 38 is the profile of the camera device of the 11st embodiment.
Embodiment
<1st embodiment>
As shown in Figures 2 and 3, the camera device 1 of the 1st embodiment and the conventional class of camera device 101 having been described above
Seemingly.That is, camera device 1 possesses photographing element chip 10, wiring plate 30 and signal cable (hereinafter also referred to as " cable ") 40.
Central portion 30M that wiring plate 30 is engaged from the 1st interarea 30SA sides with photographing element chip 10 and from central portion 30M to
Extended extended portion 30S1,30S2 are formed for both sides.Extended portion 30S1,30S2 are to the 2nd interarea 30SB side bendings.
Therefore, wiring plate 30 is accommodated in inside (in the perspective plane) 10S in the extension space on the perspective plane of photographing element chip 10.
The photographing element chip 10 being made up of semiconductor is formed as solid-state imager for example on positive 10SA
The image pickup part 11 of cmos element.Photographing element chip 10 overleaf on 10SB have via respective feed throughs 13 and with front
Multiple splice terminals 12 that 10SA image pickup part 11 connects.In addition, it is also formed with connecting image pickup part 11 on positive 10SA and passes through
The wiring of wiring 13 is worn, but it is and not shown.
Photographing element chip 10 is, for example, to form multiple shootings by using known semiconductor machining on a silicon substrate
Cut off again after portion 11 and the grade of feed throughs 13 and manufactured.Therefore, the plan view shape of photographing element chip 10 is about
Rectangle.Because the thin footpath of camera device 1, it is advantageous to the vertical view size of photographing element chip 10 is small, in other words, preferably mainly
Area it is small.
Herein, as shown in Figure 3 and Figure 4, the photographing element chip 10 of camera device 1 has same shape in appearance
16 splice terminals 12.But 8 therein are the illusory splice terminal 12D not being connected with image pickup part 11.In Fig. 4, it is illusory
Splice terminal 12D is represented with white circle.That is, arteries and veins is provided except the splice terminal 12V of the offer electric power of whereabouts image pickup part 11, to image pickup part 11
Rush between 2 splice terminal 12P of signal and image pickup part 11 4 splice terminal 12S for sending reception signal and make image pickup part
11 turn into outside 8 of the splice terminal 12G of earthing potential 8 are illusory splice terminal 12D.
Splice terminal 12V is connected with the wire 41V of the offer electric power of cable 40, and splice terminal 12P is with providing pulse signal
Wire 41P connections, splice terminal 12S is connected with sending the wire 41S of reception signal, splice terminal 12G and earthing potential
Wire 41G connections.(wire 41V, 41P, 41S and 41G are also briefly referred to as " wire 41 " below.)
Splice terminal 12 and illusory splice terminal 12D quantity and configuration are selected according to the specification of camera device.
Also, function of splice terminal 12 etc. is also not necessarily limited to above-mentioned structure.For example, splice terminal 12P can be 1, splice terminal
12G can be multiple.(also illusory splice terminal 12D, splice terminal 12V, 12P, 12S and 12G are briefly referred to as below
" splice terminal 12 ".)
It is, for example, to be engaged by scolding tin 49 between the terminal electrode 32 of wiring plate 30 and the wire 41 of cable 40.This
Outside, the wire 41G of earthing potential can also be other shielding lines that will be covered around wire.Also, respective wire
There can also be shielding line.The reason for particularly preferably easily becoming noise or easily by noise effect wire 41P and
Wire 41S is shielding line.Cable 40 need not whole length all configure in the extension space on perspective plane (hereinafter simply referred to as " throw
In shadow face ") 10S, the junction surface at least between wiring plate 30 configures the 10S in perspective plane.
As shown in Figure 5 and Figure 6, wiring plate 30 using the 1st interarea 30SA as outside (using the 2nd interarea 30SB be used as on the inside of),
By making extended portion 30S1 and 30S2 bending be configured in 10S in the perspective plane of photographing element chip 10.Bending angle θ
V is preferably 90~50 degree, more preferably 75~55 degree, e.g. 65 degree., can be with if angle of turn θ v are in above range
By the junction surface of wiring plate 30 and cable 40 configuration 10S in the perspective plane of photographing element chip 10.In addition, it is described as be described hereinafter,
Sometimes also using bending angle it is 90 degree as most preferred situation.
Because wiring plate 30 is 1 flexible distributing board, central portion 30M and extended portion are not explicitly defined
30S1,30S1 boundary.In addition, wiring plate at least bending section be flexibility can or central portion 30M and extended portion
30S1,30S2 some or all hard and soft wiring plates being made up of hard substrate.
Wiring plate 30 has in the 1st interarea 30SA central portion 30M to be engaged with the splice terminal 12 of photographing element chip 10
Bonding electrodes 31.Wiring plate 30 has 16 bonding electrodes 31 in appearance, but wherein 8 are not to be connected with image pickup part 11
Illusory bonding electrodes 31D.
8 illusory bonding electrodes 31D also engage with the illusory splice terminal 12D of photographing element chip 10 respectively.Therefore, take the photograph
As device 1 easily makes photographing element chip 10 abreast be engaged with wiring plate 30, and bond strength is strong.And then it will can image
Heat more effectively conducts heat to wiring plate 30 caused by element chip 10.
In addition, as shown in figure 3, it is preferred that it will be carried out between photographing element chip 10 and wiring plate 30 by sealing resin 19 close
Envelope.Engagement between splice terminal 12 and bonding electrodes 31 uses gold bump, solder sphere, ACP (the conductive trees of aeolotropic
Fat) or ACF (aeolotropic conductive film) etc..
1st interarea 30SA bonding electrodes 31 are connected, cloth via feed throughs 34A with the 2nd interarea 30SB wiring 33
Line 33 is connected via feed throughs 34B with extended portion 30S1,30S2 the 1st interarea 30SA terminal electrode 32.Below,
It will pass through wiring 34A, 34B and be referred to as feed throughs 34.In addition, illusory bonding electrodes 31D can also be led by feed throughs and the 2nd
Face 30SB connections.But illusory bonding electrodes 31D beyond earthing potential line (wire 41G) with not being connected.
Be because wiring plate 30 is two sides wiring plate, between bonding electrodes 31 and terminal electrode 31 via wiring 33 and
Feed throughs 34A, 34B and connect, but in the case of single substrate, the company between bonding electrodes 31 and terminal electrode 32
Connect and avoid the need for feed throughs.On the contrary, the multiwiring board for the wiring layer for having the above that haves three layers can also be used.Also, can also
Electronic component is installed in the midway of wiring 33.Electronic component can be from chip capacitor, Chip-R, signal processing IC, driving
The part needed is selected in device IC, power supply IC, diode, coil or reed switch.
Moreover, as shown in Figure 6 and Figure 7, wiring plate 30 has to be formed on the 1st interarea 30SA is being formed without bonding electrodes
31 and terminal electrode 32 region in heat transfer pattern 35.In the wiring plate 30 as illustrated in Fig. 6, pattern 35 is conducted heat to surround
The mode of bonding electrodes 31 is formed since the 1st interarea 30SA central portion 30M via whole extended portion 30S1,30S2
's.The pattern 35 that conducts heat conducts heat heat caused by image pickup part 11 to base end part side.
Although as shown in fig. 7, forming heat transfer pattern not on the 2nd interarea 30SB, wiring 33 can not also be being formed
Region in formed the 2nd heat transfer pattern.
Bonding electrodes 31, terminal electrode 32 and heat transfer pattern 35 are, for example, by being formed in the whole of the 1st interarea 30SA
Conducting film on face carries out pattern etching and formed.That is, conducting film etching is eliminated into picture frame shape so that the He of bonding electrodes 31
It is not turned between heat transfer pattern 35.It is of course also possible to form heat transfer pattern 35 etc. by galvanoplastic.Also, biography can also be made
Thermal image 35 is bigger than the film forming thickness of bonding electrodes 31 and the grade of terminal electrode 32.
Conduct heat pattern 35 area it is preferably big, be particularly preferred the area for being the 1st interarea 30SA more than 50% and
Less than 90%.If more than the lower limit of above range, then heat dissipation characteristics improvement is notable, if the upper limit of above range
Hereinafter, then it may insure the necessary area of bonding electrodes 31 and terminal electrode 32.
As long as in addition, the He of terminal electrode 32 is formed in extended portion 30S1 or extended portion 30S2 at least one side
Wiring 33, heat transfer pattern 35 is formed in extended portion 30S1 or extended portion 30S2 at least one side.
Due to can configure the grade of wiring plate 30 in defined narrow space, so easily by the external diameter of camera device 1
Size diminishes.Therefore, camera device 1 can be stably disposed in narrow space.Moreover, produced by photographing element chip 10
Heat via heat transfer pattern 35 and transferred heat to base end side.Therefore, the heat dissipation characteristics of camera device 1 are excellent.
Also, because illusory the splice terminal 12D and wiring plate 30 of photographing element chip 10 illusory bonding electrodes 31D connect
Close, so the heat dissipation characteristics of camera device 1 are more excellent.
<2nd embodiment>
The camera device 1A of the 2nd embodiment is illustrated below.Because camera device 1A is similar with camera device 1,
So identical symbol is marked on identical structural element, and the description thereof will be omitted.
As shown in figure 8, on camera device 1A wiring plate 30A, engaged with the wire 41G of the earthing potential of cable 40
Terminal electrode 32G is integrated with heat transfer pattern 35A.Also, illusory bonding electrodes 31D is also integrated with heat transfer pattern 35A.That is,
Illusory bonding electrodes 31D is connected with heat transfer pattern 35A.In addition, wiring plate 30A the 1st interarea 30SA is removed and photographing element core
The region that the splice terminal 12 of piece 10 engages, with resin bed covering (not shown).
Camera device 1A has the effect of camera device 1, and then, because the heat transfer pattern 35A of large area is earthing potential,
So preventing the noise radiation caused by the reasons such as the transmission reception of signal, and also it is not readily susceptible to the noise shadow of outside
Ring.And then because illusory bonding electrodes 31D is connected with heat transfer pattern 35A, radiatings of the camera device 1A than camera device 1
Effect is high.
<3rd embodiment>
The camera device 1B of the 3rd embodiment is illustrated below.Because camera device 1B and camera device 1,1A classes
Seemingly, so marking identical symbol on identical structural element, and the description thereof will be omitted.
As shown in Figure 10 and Figure 11, camera device 1B wiring plate 30B on the 1st interarea 30SA have power-supply wiring 33V,
Terminal electrode 32P and pulse wiring 33P and heat transfer pattern 35B, wherein power-supply wiring 33V provide electric power, end to image pickup part 11
Sub-electrode 32P and pulse wiring 33P engage with providing as the wire 41P of the clock signal of pulse signal, in the 2nd interarea 30SB
Upper have terminal electrode 32S and signal routing 33S, they and the wire for sending reception of signal is carried out between image pickup part 11
41S is engaged.
Camera device 1B has camera device 1,1A effect, and then because pulse wiring 33P and signal routing 33S is formed
On wiring plate 30B different interareas, it is possible to prevent the deterioration of the reception image caused by the interference of signal.
As long as in addition, pulse wiring 33P and signal routing 33S formed on the different interareas of wiring plate, then radical and
Configuration etc. is not limited to said structure, can be selected according to the specification of camera device.
And then because also having the 2nd heat transfer pattern 35BB of earthing potential on wiring plate 30B the 2nd interarea 30SB,
Camera device 1B radiating effect and shield effectiveness ratio camera device 1,1A is high.
<4th embodiment>
The camera device 1C of the 4th embodiment is illustrated below.Because camera device 1C and camera device 1~1B classes
Seemingly, so marking identical symbol on identical structural element, and the description thereof will be omitted.
As shown in Figure 12 and Figure 13, camera device 1C wiring plate 30C have the central portion 30M that is substantially square and
4 generally rectangular shaped extended portion 30S1~30S4 being extended on from central portion 30M to mutually orthogonal direction.
As shown in figure 14, because 4 extended portion 30S1~30S4 are to inner side bending, wiring plate 30C by with
Put the 10S in the perspective plane of photographing element chip 10.
In addition, in order to which the junction surface of terminal electrode 32 and wire 41 is configured into 10S, extended portion in perspective plane
30S1,30S2 bending angle θ v are 75~55 degree, and extended portion 30S3,30S4 bending angle θ v are about 90 degree.
Camera device 1C has 1~1B of camera device effect, and then because of the also shape on extended portion 30S3,30S4
Into radiating pattern 35C, 35CB, so heat dissipation characteristics are more preferable.Especially because cloth is not formed on extended portion 30S3,30S4
Line 33 etc., it is possible to form greater area of heat transfer pattern.
Even in addition, possesses the wiring plate with 3 extended portions being extended to mutually orthogonal direction
Camera device, naturally it is also possible to obtain the effect same with camera device 1C.
<5th embodiment>
The camera device 1D of the 5th embodiment is illustrated below.Because camera device 1D and camera device 1~1C classes
Seemingly, so marking identical symbol on identical structural element, and the description thereof will be omitted.
As shown in figure 15, also there is the cover glass engaged with the positive 10SA of photographing element chip 10 in camera device 1D
51st, the optical unit 52 being made up of camera lens and its supporter and the outer cylindrical portion 50 being made up of metal.In addition, for the ease of saying
Bright, Figure 15 is the schematic diagram for being combined the profile along different faces, wiring 33 etc. not shown.Also, schematically show
Go out the optical unit 52 being made up of as usual the optical components such as multiple camera lenses and its fixed component and supporter.
Leading section, photographing element chip 10, cover glass 51 and the wiring plate 30 of cable 40 are incorporated in outer cylindrical portion 50.
That is, the perspective plane of the internal diameter size of outer cylindrical portion 50 and photographing element chip 10 is roughly equal.It is filled in the inside of outer cylindrical portion 50
The non-conductive resin 53 of the high thermoconductivities such as silicones.
Camera device 1D is also equipped with the block 20 as thermal component abutted with the interarea of extended portion.Block 20 and wiring
2nd interarea 30SB of plate 30 is abutted against, and with as wiring plate 30 is configured in defined space, i.e. photographing element core
The function of fixed component in the perspective plane of piece 10 in 10S.Also, because block 20 stably keeps wiring plate 30, make cable
The operation that line 40 is joined on wiring plate 30 becomes easy.
Block 20 also has as the interarea of photographing element chip 10 and wiring plate 30 are kept into integral and apply mechanicalness
The function of the strengthening part of intensity.That is, because photographing element chip 10 is, for example, what is be made up of silicon substrate, it is possible to because outer
Power and deform or damaged.But photographing element chip 10 is via wiring plate 30 with block 20 by engaging, and add machinery
Property intensity.Similarly, wiring plate 30 engages also by with block 20, although flexibility can substantially be lost, but can increase intensity.
Also, camera device 1D is rolling over because wiring plate 30 is fixed with the state abutted against with block 20
It can also turn into generally with the state of defined angle bending even if without using special fixture etc. when curved.That is, camera device 1D can
So that easily wiring plate 30 etc. is disposed in defined narrow space.
In addition, in this manual, so-called " abutting " refers not only to situation about directly being contacted not via other parts,
Also comprising situation about being engaged via thin bonding layer.For example, can be preferably using the high silicones of heat conductivity as bonding layer
Use.
In addition, camera device 1D cable 40 has the shielding line being made up of netted metal for covering multiple conducting wires 41
42.Moreover, shielding line 42 engages with the surface of block 20 and the inner surface of outer cylindrical portion 50.Therefore, the heat of block 20 and outer cylindrical portion 50
Amount is effectively conducted heat via the high shielding line 42 of heat conductivity to base end part side.
Camera device 1D has 1~1C of camera device effect, and then easy to manufacture, and heat dissipation characteristics are excellent.
<6th embodiment>
The camera device 1E of the 6th embodiment is illustrated below.Because camera device 1E and camera device 1~1D classes
Seemingly, so marking identical symbol on identical structural element, and the description thereof will be omitted.
As shown in figure 16, camera device 1E is same with camera device 1C has wiring plate 30C, and wiring plate 30C is 4 sides
Possess extended portion upwards.And then the contacted inner surfaces of the part and outer cylindrical portion 50 for the pattern 35C that conducts heat connect.In addition, Figure 16
It is and Figure 15 identical schematic diagrames, wiring 33 etc. not shown.
In camera device 1E, heat caused by image pickup part 11 is via heat transfer pattern 35C and effectively to outer cylindrical portion 50
Heat transfer.Therefore, camera device 1E has 1~1D of camera device effect, and heat dissipation characteristics are more excellent.
<7th embodiment>
The endoscope 9 of the 7th embodiment is illustrated below.As shown in figure 17, endoscope 9 is in the front end of insertion section 3
Portion 2 has 1~1E of camera device.And then endoscope 9 possesses the operating portion 4 for the base end side for being disposed in insertion section 3 and from operation
The universal cable 5 that portion 4 extends out.
Operating portion 4 is equipped with various switches for being held and being operated for surgical staff etc..The cable of camera device 1
Line 40 through being inserted among insertion section and universal cable 5, and via the base end part for being disposed in universal cable connector and
It is connected with the main part (not shown) for carrying out image procossing etc..
Because endoscope 9 possesses the excellent camera device 1 of the heat dissipation characteristics that can be disposed in narrow space in leading section
~1E, so leading section is thin footpath, and good heat stability.
<8th embodiment>
<The structure of semiconductor device>
As shown in Figure 18 and Figure 19, the semiconductor device 210 of the 8th embodiment possesses semiconductor device (hereinafter referred to as " half
Conductor chip ") 201 and flexible base board (hereinafter referred to as " wiring plate ") 205.
Set on 2nd interarea (rear end face 201t) opposite with the 1st interarea (front end face 201i) of semiconductor chip 201
There is connection terminal 202.Connection terminal 202 and the electricity of electrode of substrate 203 being arranged on the mounting surface 205j described later of wiring plate 205
Connection.Also, because wiring plate 205 is bent, bowed from the thickness direction A for linking front end face 201i and rear end face 201t
During depending on semiconductor chip 201, entirety and the semiconductor chip 201 of wiring plate 205 coincide.
As shown in figure 20, using the flexible resin(a)s such as polyimides as the wiring plate 205 of matrix in the outer of semiconductor chip 201
On position between shape and electrode of substrate 203, such as along single dotted broken line partial arc shape will be bent to so that angle of bend at 2
For less than 90 degree.The entirety and semiconductor chip of wiring plate 205 when therefore, in order to overlook semiconductor chip 201 from thickness direction A
201 coincide, and to the direction (hereinafter referred to as rear) away from rear end face 201t on the thickness direction A of semiconductor chip 201
Arrange wiring plate 205.
That is, bending section 205c at 2 is formed on wiring plate 205.In the outer peripheral face 205g of wiring plate 205, it will bend at 2
The region parallel with rear end face (the 2nd interarea) 201t of semiconductor chip 201 between portion 205c is referred to as " mounting surface 205j ".
In addition, as shown in figure 20, formed with electrode of substrate 203 and signal cable on the outer peripheral face 205g of wiring plate 205
The connection electrode 205r of electrical connection (not shown) and the wiring for being electrically connected connection electrode 205r and electrode of substrate 203
Pattern 205h.
Herein, if bending section 205c is bent with the angle bigger than 90 degree, on the outer peripheral face 205g of wiring plate 205
Electronic component is installed or when electrically connecting signal cable on connection electrode 205r, electronic component and signal cable can protrude into half
The outside of the profile of conductor chip 201, semiconductor device 21 can maximize.In addition, bending section 205c angle of bend preferably by
It is set to discontented 90 degree of acute angle.
Resin 208 is, for example, the sealing resin of filling.Resin 208 is filled in the rear end face of semiconductor chip 201
In space K between at least rear end face 201t at 201t rear and the mounting surface 205j of wiring plate 205, from thickness direction A
During upper vertical view semiconductor chip 201, entirety and the semiconductor chip 201 of resin 208 coincide.
Also, as shown in Figure 18, Figure 19, on the horizontal direction B perpendicular with thickness direction A, resin 208 is not with from half
The degree that the profile of conductor chip 201 is overflowed laterally overflows length P1 than mounting surface 205j laterally from space K.In addition, institute
" spilling " of meaning refers to from the outwardly directed state of defined scope.
And then resin 208 is from space K along the bending section 205c on the outer peripheral face 205g of wiring plate 205 in thickness
Overflow length P2 in rear on the A of direction than mounting surface 205j rearward.That is, resin 208 spills into the outer of bending section 205c from space K
Untill side face 205cg.In addition, the resin 208 for spilling into bending section 205c outer peripheral face 205cg also is located in the horizontal direction on B
Not from the position that the profile of semiconductor chip 201 is overflowed laterally.
In addition, in order to improve tack of the resin 208 of spilling to bending section 205c outer peripheral face 205cg, and it is preferred that
Hydrophily processing, or shape are implemented by plasma cleaning etc. on the outer peripheral face 205cg of bending section 205c attachment resin 208
As making surface roughness thicker.
Furthermore, it is possible to make containing carbon particle or pigment etc. in resin 208, also, filler etc. can also be contained.If contain
Carbon particle or pigment, then light-proofness can be improved, if containing the high filler of pyroconductivity, thermal diffusivity can be improved.
<The manufacture method of semiconductor device>
Then, the manufacture method of semiconductor device 210 is illustrated using Figure 21~Figure 25.
<Installation procedure>
As shown in figure 22, wiring plate installation procedure is carried out, the wiring plate installation procedure is being arranged at semiconductor chip 201
The electrode of substrate 203 of the wiring plate 205 of un-flexed state (flat condition) is electrically connected on rear end face 201t connection terminal 202.
Electrode of substrate 203, which is electrically connected on connection terminal 202, to be carried out by applying heat N from the side of wiring plate 205.
It is because pasting glass described later in the front end face 201i of semiconductor chip 201 to apply heat N from the side of wiring plate 205
In the case of cover plate 260 (reference picture 37), it is difficult to apply heat N from 201 laterally attached portion of semiconductor chip.
<Fixture installation procedure>
As shown in figure 23, fixture installation procedure is carried out, the fixture installation procedure is to wiring plate 205 and mounting surface 205j phases
The inner peripheral surface 205n installation stationary fixtures 220 tossed about, are located at stationary fixture 220 and overlook semiconductor chip from thickness direction A
On the position to be coincided when 201 with semiconductor chip 201.
<Bending operation>
As shown in figure 24, carry out wiring plate bending operation, the wiring plate bending operation by making wiring plate 205 2 at, tool
Said along the line C shown in Figure 20 body and bend to less than 90 degree of angle, and be located at wiring plate 205 and bowed from thickness direction A
On the position to be coincided depending on the entirety of wiring plate during semiconductor chip 201 205 with semiconductor chip 201, and pass through geometrical clamp
Have 220 and mechanically keep the curved shape of wiring plate 205.In addition, after bending, the inner peripheral surface 205n of wiring plate 205 is with consolidating
The outer peripheral face contact of clamp tool 220.
<Resin filling work procedure>
As shown in figure 25, resin filling work procedure is carried out, the resin filling work procedure is at least to the rear end face of semiconductor chip 201
Potting resin 208 in space between 201t and the mounting surface 205j of wiring plate 205.In resin filling work procedure, than rear end
The rear potting resins of face 201t rearward so that from thickness direction A overlook semiconductor chip 201 when, the entirety of resin 208 with
Semiconductor chip 201 coincides, and by drying machine etc. come hardening resin 208.
As shown in figure 25, since than mounting surface 205j close to lower section, specifically, near the 205c of bending section example
The potting resin 208 below more than the 1st amount α and the 2nd amount α ' at least such as is filled to space K using distributor 225, wherein, such as
Shown in Figure 21, the 1st amount α is the amount to the resin 208 of space K fillings 100%, and the 2nd amount α ' is to setting space K' fillings
The amount of 100% resin 208, setting space K ' are that mounting surface 205j is expanded into half as shown in Figure 21 double dot dash line
The space between mounting surface 205j and rear end face 201t during the profile of conductor chip 201.
In addition it is also possible to after filling the 1st amount α to space K, by the outer peripheral face 205cg to each bending section 205c separately
The spilling portion of application of resin 208 and length P2 of the formation along each bending section 205c of resin 208.
As a result, each bending section 205c of the resin 208 from space K along wiring plate 205 on thickness direction A than installation
Face 205j overflows length P2 close to the direction at rear.
<Fixture unloads process>
After resin filling work procedure, the fixture that is unloaded by entering to be about to stationary fixture 220 from wiring plate 205 unload process and
Produce semiconductor device 210.
In the present embodiment, substrate is electrically connected by the connection terminal 202 of the rear end face 201t to semiconductor chip 201
Electrode 203, and wiring plate 205 is located at the rear of semiconductor chip 201, also, by making to bend to make wiring plate 205 at 2
Positioned at the position that the entirety of wiring plate 205 when semiconductor chip 201 is overlooked from thickness direction A coincides with semiconductor chip 201
Put.
Also, at least it is filled between the mounting surface 205j of wiring plate 205 and the rear end face 201t of semiconductor chip 201
Space K in resin 208 be located at the outer peripheral face 205cg for spilling into each bending section 205c from the K of space untill position, and
Resin 208 is also filled to its entirety when semiconductor chip 201 is overlooked from thickness direction A and coincided with semiconductor chip 201.
Consequently, because wiring plate 205 and resin 208 in the horizontal direction on B not from the profile of semiconductor chip 201 laterally
Overflow, it is possible to minimize semiconductor device 210.
Also, because the resin 208 untill spilling into each bending section 205c outer peripheral face 205cg from space K is firmly solid
Surely wiring plate 205 is lived, and can prevent wiring plate 205 to return to action (the otherwise referred to as elasticity change of un-flexed state
Shape is replied) so as to maintain the curved shape of wiring plate 205, so improving electrode of substrate 203 relative to connection terminal 202
Connection reliability.
And then in the manufacture method of the semiconductor device of present embodiment, after making the bending of wiring plate 205, to space K
Potting resin 208.Therefore, resin 208 will not be made along with the bending of the wiring plate 205 after hardening of resin as in the past
Bearing load, in addition, wiring plate 205 can be easily set to be located at cloth when overlooking semiconductor chip 201 from thickness direction A
On the position that the entirety of line plate 205 coincides with semiconductor chip 201.
Also, the connection terminal 202 of semiconductor chip 201 can be with relative to the connection of the electrode of substrate 203 of wiring plate 205
Pass through known SMT (Surface Mount Technology：Surface installation technique) etc. in general installation method easily enter
OK.
As explained above, according to present embodiment, a kind of semiconductor device 210 and semiconductor device can be provided
210 manufacture method, by the way that wiring plate 205 firmly can be fixed on semiconductor chip 201, and make the wiring of bending
Plate 205 is located in the profile of semiconductor chip 201, and minimizes semiconductor device 210.
<Variation 1>
The manufacture method of variation 1 is illustrated using Figure 26~Figure 29.
<Fixture installation procedure>
As shown in figure 26, in variation 1 carry out fixture installation procedure, the fixture installation procedure wiring plate 205 with
Stationary fixture 220 is installed on the inner peripheral surface 205n of the opposite sides of mounting surface 205j.
<Bending operation>
Then, as shown in figure 27, wiring plate bending operation is carried out, the wiring plate bending operation is by making the 2 of wiring plate 205
Place, less than 90 degree specifically are bent to along line C as shown in figure 20, and wiring is mechanically kept by stationary fixture 220
The curved shape of plate 205.In addition, after bending, the inner peripheral surface 205n of wiring plate 205 contacts with the outer peripheral face of stationary fixture 220.
<Resin working procedure of coating>
Below, as shown in figure 28, resin working procedure of coating, mounting surface of the resin working procedure of coating in wiring plate 205 are carried out
The upper application of resin 208 of 205j.
<Installation procedure>
Afterwards, as shown in figure 29, semiconductor element chip installation procedure is carried out, the semiconductor element chip installation procedure leads to
Cross and apply loading on semiconductor chip 201 and flatten resin 208 so that the connection terminal 202 of semiconductor chip 201 is with setting
The electrode of substrate 203 put on the mounting surface 205j of wiring plate 205 electrically connects, and resin 208 and wiring plate 205 is at least existed
It is located in the K of space when semiconductor chip 201 is overlooked from thickness direction A in the He of rear resin 208 than rear end face 201t rearward
On the position that the entirety of wiring plate 205 coincides with semiconductor chip 201, also, until terminating to be installed as wiring plate 205
Only, or after mounting, harden resin 208 by heating unit.
As shown in figure 28, the resin of the loading below more than the 1st amount α and the 2nd amount α ' is applied on mounting surface 205j
208, wherein, as shown in figure 21, the 1st amount α is the amount to the resin 208 of space K fillings 100%, and the 2nd amount α ' is to setting
The amount of the resin 208 of space K' fillings 100%, setting space K ' is by mounting surface as shown in Figure 21 double dot dash line
The space between mounting surface 205j and rear end face 201t when 205j expands to the profile of semiconductor chip 201.
As a result, after semiconductor element chip installation procedure, resin 208 is from space K along each curved of wiring plate 205
Pars convoluta 205c overflows length P2 to the rear than mounting surface 205j rearward on thickness direction A.
In addition it is also possible to after applying the 1st amount α to mounting surface 205j, it is as described above, connected on connection terminal 202
Electrode of substrate 203, afterwards again by the further application of resin 208 of outer peripheral face 205cg to each bending section 205c and formed along
Each bending section 205c of resin 208 length P2 spilling portion.
<Fixture unloads process>
After semiconductor element chip installation procedure, the fixture that is unloaded by entering to be about to stationary fixture 220 from wiring plate 205
Unload process and produce the semiconductor device 210 of variation 1.
In variation 1, after making the bending of wiring plate 205, because making the electrode of substrate 203 and semiconductor chip of wiring plate
201 connection terminal 202 is electrically connected, so in addition to it can mitigate the bending stress being applied on wiring plate, also not
Load etc. can be applied along with the bending of wiring plate 205 and to resin 208, it is hereby achieved that being imitated with embodiment identical
Fruit.
<Variation 2>
Variation 2 is illustrated using Figure 30.
In the 8th embodiment, wiring plate 205 has been bent at 2, that is, forms bending section 205c at 2.
On the other hand, as shown in figure 30, although only forming bending section 205c at 1 in variation 2, implement with the 8th
Mode is same, wiring plate 205 be located at when semiconductor chip 201 is overlooked in the rear of semiconductor chip 201 from thickness direction A its
On the overall position to be coincided with semiconductor chip 201.
In addition, in variation 2, resin 208 in the horizontal direction also will not be from the profile of semiconductor chip 201 on B
Overflow laterally, also, the length P2 at 1 untill bending section 205c outer peripheral face 205cg is overflowed from space K.
<Variation 3>
Variation 3 is illustrated using Figure 31~Figure 33.
As shown in figure 33, the wiring plate 205 of variation 3 forms bending section 205c at 4.
When what is intersected like that in 4 positions 205v, 205w, 205x, 205y of the wiring plate 205 of crosswise as shown in figure 32
Central portion by the connection terminal 202 of semiconductor chip 201 with as shown in figure 31 like that with 4 position 205v, 205w,
After the electrode of substrate 203 that the outer peripheral face 205g of the wiring plate 205 of 205x, 205y crosswise exposes electrically connects, such as Figure 33 institutes
Show, by making each position 205v, 205w, 205x, 205y bend to less than 90 degree respectively, and bending section 205c is formed at 4.
In variation 3, wiring plate 205 also is located at overlooking from thickness direction A at the rear of semiconductor chip 201
During semiconductor chip 201 on its overall position to be coincided with semiconductor chip 201, and resin 208 is except will not be in level
On the B of direction outside the profile of semiconductor chip 201 is overflowed laterally, it can also be overflowed from space K at 4 to the outer of bending section 205c
Length P2 untill side face 205cg.
<9th embodiment>
Present embodiment is different on following 2 points compared with the 8th embodiment：It is solid on the inner peripheral surface of wiring plate
Surely there is the process strengthened resin and strengthen resin with the inner peripheral surface filling to wiring plate.Therefore, only difference is said
Bright, for marking identical symbol with the 8th embodiment identical structure, and the description thereof will be omitted.
As shown in figure 34, in the semiconductor device 210 of present embodiment, fixed in the inner peripheral surface 205n of wiring plate 205
There is the reinforcement resin 230 for the curved shape of fixed wiring plate 205.That is, it is provided with the inner space M of wiring plate 205
Strengthen resin 230.In addition, strengthen resin 230 both can be with the identical material of resin 208, different materials can also be used.
The manufacture method of the semiconductor device of present embodiment is shown using Figure 35.Figure 35 is to show the wiring plate in Figure 34
Inner space in filling strengthen resin reinforcement resin filling work procedure figure.
In the present embodiment, carry out strengthening resin filling work procedure, the reinforcement resin filling work procedure unloads above-mentioned fixture
After the semiconductor device 210 (reversing in a thickness direction) formed after lower process is inverted, as shown in figure 35, pass through distribution
The grade of device 235 internally fills the reinforcement tree for the curved shape of fixed wiring plate 205 in the M of space from the opening of wiring plate 205
Fat 230.
Strengthen resin 230 as a result, being fixed with the inner peripheral surface 205n of wiring plate 205.
According to present embodiment, because on the basis of the effect of the 8th embodiment, enter one by strengthening resin 230
Step strengthens the curved shape of wiring plate 205, it is possible to the intensity of semiconductor device 210 is further improved.
<10th embodiment>
The structure of the semiconductor device of present embodiment is different on following 2 points compared with the 8th embodiment：
The inner peripheral surface of wiring plate is fixed with thermal component and the process with the inner peripheral surface fixation thermal component in wiring plate.Therefore, only
Difference is illustrated, for marking identical symbol with the 8th embodiment identical structure, and the description thereof will be omitted.
As shown in figure 36, in the semiconductor device 210 of present embodiment, fixed in the inner peripheral surface 205n of wiring plate 205
There is thermal component 240, the thermal component 240 is used for the curved shape of fixed wiring plate 205, and to from semiconductor chip 201
The heat to come that conducted heat via wiring plate 205 is radiated.That is, it is provided with radiating part in the inner space M of wiring plate 205
Part 240.In addition, as thermal component 240, the inorganic material such as SUS, aluminium, ceramics and resin material etc. can be enumerated.
In addition, the manufacture method as present embodiment, can replace consolidating in the fixture installation procedure of the 8th embodiment
Clamp has 220 and uses the thermal component 240 for having same shape with stationary fixture 220.
In addition, in the present embodiment, need not be real the 8th because to leave thermal component 240 in the M of space
Apply the fixture shown in mode and unload process.
According to present embodiment because do not need fixture unload process, except can cut down manufacturing process's quantity it
Outside, the curved shape of wiring plate 205 is also further strengthened, and then can make semiconductor device 210 by thermal component 240
Thermal diffusivity improve.
<Camera device>
Herein, the semiconductor device of the 8th~the 10th embodiment is for example used as camera device.For example, Figure 37 is to show
Go out the figure of example of the semiconductor device 210 of the 8th embodiment as camera device 210A.Semiconductor chip be formed with by
Light portion 210e photographing element chip 201A.Covering light accepting part 201e is pasted with photographing element chip 201A front end face 201i
Cover glass 260.
If applying the semiconductor device of the 8th~the 10th embodiment in camera device, because wiring plate 205 and tree
Fat 208 is located in the profile of semiconductor device 210 and minimized, and it is advantageous to be equipped on to require miniaturization, path
The front end of the insertion section of endoscope.
In addition, camera device in addition to being arranged at medical or industrial endoscope, can also be arranged at doctor
In the capsule endoscope for the treatment of, and it is not limited to endoscope, naturally it is also possible to applied to portable phone and electronics with camera
On camera.And then semiconductor device 210 can also be applied on other devices different from camera device.
<11st embodiment>
1~1E of camera device of 1st~the 7th embodiment etc. can also possess the semiconductor of the 8th~the 10th embodiment
The structure of device.
For example, the camera device 1F of the 11st embodiment shown in Figure 38 possesses：Photographing element chip, it has on front
There is image pickup part, and there is the splice terminal being connected via feed throughs with above-mentioned image pickup part on the back side；Signal cable, it has
There is the wire being connected with above-mentioned image pickup part；Wiring plate, it is set by central portion and the multiple extensions being extended from above-mentioned central portion
Put portion composition, and with formed above-mentioned central portion bonding electrodes engage with above-mentioned splice terminal, formation in above-mentioned extension
The terminal electrode engaged with above-mentioned wire of setting unit, the wiring for being connected above-mentioned bonding electrodes and above-mentioned terminal electrode and shape
Into the heat transfer pattern in the region for being formed without above-mentioned bonding electrodes, above-mentioned terminal electrode and above-mentioned wiring, and by making
Above-mentioned extended portion bending and by the wiring plate configuration in the perspective plane of above-mentioned photographing element chip；And sealing resin,
It is filled in the space between above-mentioned photographing element chip and above-mentioned wiring plate, and from above-mentioned space along above-mentioned wiring
The formation of plate has the bending section on the outer peripheral face of above-mentioned mounting surface remote to the mounting surface in a thickness direction than above-mentioned wiring plate
Overflow in the direction of interarea.
Camera device 1F has 1~1E of camera device of the 1st~the 7th embodiment effect and the 8th~the 10th embodiment party
The semiconductor device of formula.
The present invention is not limited to above-mentioned embodiment etc., in the range of the purport of the present invention is not changed, can carry out
Various changes, change, combination etc..
The application is in the Japanese Patent Application 2012-233994 of Japanese publication and in November, 2012 with October 23rd, 2012
Japanese Patent Application 2012-248676 in Japanese publication on the 12nd submits application as basis for priority, above-mentioned disclosed interior
Appearance is cited in present specification, claims, accompanying drawing.
Claims (18)
1. a kind of camera device, it possesses：
Photographing element chip, it has image pickup part in front, overleaf has and is connected via feed throughs with the image pickup part
Splice terminal；
Signal cable, it has the wire being connected with the image pickup part；And
Wiring plate, it is formed by central portion and from multiple extended portions that the central portion is extended, by making described prolong
Stretch setting unit bending and configure the wiring plate in the perspective plane of the photographing element chip, wherein, the camera device tool
Have：
Form the bonding electrodes engaged with the splice terminal in the central portion；
Form the terminal electrode engaged with the wire in the extended portion；
Connect the wiring of the bonding electrodes and the terminal electrode；And
The heat transfer pattern in the region for being formed without the bonding electrodes, the terminal electrode and the wiring is formed,
Wherein, the photographing element chip the back side have with the splice terminal same shape, not with the shooting
The illusory splice terminal of portion's connection,
The wiring plate has illusory engagement electricity with the bonding electrodes same shape, being engaged with the illusory splice terminal
Pole.
2. camera device according to claim 1, wherein,
The heat transfer pattern of the wiring plate is connected with the wire of the earthing potential of the signal cable.
3. camera device according to claim 2, wherein,
The wiring plate is the two sides wiring plate for having on the 1st interarea and the 2nd interarea wiring layer,
There is the power-supply wiring as the wiring that electric power is provided to the image pickup part on the 1st interarea, taken the photograph as to described
Pulse wiring and the heat transfer pattern as the wiring of portion's offer pulse signal,
There is the signal routing as the wiring that reception signal is sent between the image pickup part on the 2nd interarea.
4. camera device according to claim 3, wherein,
The wiring plate has the 2nd heat transfer pattern on the 2nd interarea.
5. camera device according to claim 2, wherein,
The wiring plate has 3 or 4 be extended from the central portion to mutually orthogonal direction are described to be extended
Portion, and formed with the multiple terminal electrode and the multiple wiring at least one extended portion, and extremely
Formed with the heat transfer pattern on a few extended portion.
6. camera device according to claim 2, wherein,
The camera device possesses the outer cylindrical portion being made up of metal, and the outer cylindrical portion stores the photographing element chip, the wiring
A part for plate and the signal cable,
The contacted inner surfaces of the part and the outer cylindrical portion of the heat transfer pattern connect.
7. camera device according to claim 6, wherein,
The camera device possesses the heat transfer component abutted against with the interarea of the extended portion.
8. camera device according to claim 6, wherein,
The signal cable has shielding line,
The shielding line engages with the heat transfer component and the outer cylindrical portion.
9. a kind of endoscope, it possesses：
Insertion section, its leading section are equipped with the camera device described in any one in claim 1 to claim 8；
Operating portion, it is disposed in the base end side of the insertion section；And
Universal cable, it extends out from the operating portion.
10. a kind of semiconductor device, it possesses：
Semiconductor element chip, it has the 1st interarea and the 2nd interarea；
Wiring plate, it is arranged on the 2nd interarea of the semiconductor element chip, is bent to from the semiconductor element
It integrally coincides with the semiconductor element chip when thickness direction of chip is overlooked；And
Resin, what it was filled in the 2nd interarea of the semiconductor element chip and the wiring plate is attached to the described 2nd
In space between the mounting surface of interarea, also, positioned at its is whole when overlooking the semiconductor element chip from the thickness direction
On the position that body coincides with the semiconductor element chip,
Formation of the resin from the space along the wiring plate have bending section on the outer peripheral face of the mounting surface to
Overflowed on the thickness direction than direction of the mounting surface away from the 2nd interarea,
Wherein, the face for resin attachment of the bending section has been carried out hydrophily processing.
11. semiconductor device according to claim 10, wherein,
The reinforcement resin of the curved shape for fixing the wiring plate is equipped in the inner peripheral surface of the wiring plate.
12. semiconductor device according to claim 10, wherein,
Thermal component is equipped with the inner peripheral surface of the wiring plate, the thermal component is used for the Curved for fixing the wiring plate
Shape, and the heat to being transmitted from the semiconductor element chip via the wiring plate radiates.
13. a kind of manufacture method of semiconductor device, it possesses：
Wiring plate installation procedure, the 2nd interarea of the side opposite with the 1st interarea of semiconductor element chip is installed on wiring plate；
Fixture installation procedure, installation is solid on the face of the opposite side of the mounting surface with being attached to the 2nd interarea of the wiring plate
Clamp has；
Wiring plate bending operation, by make the wiring plate benging make the wiring plate be located at from link the 1st interarea and
The wiring plate when thickness direction of the semiconductor element chip of 2nd interarea overlooks the semiconductor element chip
On the overall position to be coincided with the semiconductor element chip, and the wiring plate is kept by the stationary fixture
Curved shape；And
Resin filling work procedure, pass through the installation of the 2nd interarea and the wiring plate in the semiconductor element chip
Potting resin in space between face, and the resin is located in the space from thickness direction vertical view is described and partly lead
On the position that the entirety of the resin coincides with the semiconductor element chip during body element chip, also, make the resin
Hardening,
In the resin filling work procedure, by according to more than 1st amount and loading that the 2nd amount is following fills the tree
Fat, make formation of the resin from the space along the wiring plate have the bending section on the outer peripheral face of the mounting surface to
Overflowed on the thickness direction than direction of the mounting surface away from the 2nd interarea, wherein, the 1st amount is to the sky
Between filling 100% the resin amount, the 2nd amount be to setting space fill 100% the resin amount, it is described to set
It is the mounting surface and the 2nd interarea when mounting surface to be expanded to the profile of the semiconductor element chip to determine space
Between space,
Wherein, after the resin filling work procedure, it is also equipped with unloading the fixture that the stationary fixture unloads from the wiring plate
Lower process.
14. a kind of manufacture method of semiconductor device, it possesses：
Fixture installation procedure, install and fix on the face of the opposite side of the mounting surface with being attached to semiconductor element chip of wiring plate
Fixture；
Wiring plate bending operation, make the wiring plate benging, and the curved of the wiring plate is kept by the stationary fixture
Curved shape；
Resin working procedure of coating, the application of resin on the mounting surface of the wiring plate；And
Semiconductor element chip installation procedure, by flattening the resin while by the semiconductor element chip and
2nd interarea of the opposite side of 1 interarea is arranged on the mounting surface of the wiring plate, and makes the wiring plate and the institute being bent
State space of the resin at least between the 2nd interarea of the semiconductor element chip and the mounting surface of the wiring plate
In be located at described in overlooked from the thickness direction for the semiconductor element chip for linking the 1st interarea and the 2nd interarea
On the position that the entirety of the wiring plate and the resin coincides with the semiconductor element chip during semiconductor element chip,
Also, make the hardening of resin,
In the resin working procedure of coating, by according to more than 1st amount and loading that the 2nd amount is following applies the tree
Fat, make formation of the resin from the space along the wiring plate have the bending section on the outer peripheral face of the mounting surface to
Overflowed on the thickness direction than direction of the mounting surface away from the 2nd interarea, wherein, the 1st amount is to the sky
Between filling 100% the resin amount, the 2nd amount be to setting space fill 100% the resin amount, it is described to set
It is the mounting surface and the 2nd interarea when mounting surface to be expanded to the profile of the semiconductor element chip to determine space
Between space.
15. the manufacture method of semiconductor device according to claim 14, wherein,
After the semiconductor element chip installation procedure, the folder for unloading the stationary fixture from the wiring plate is also equipped with
Tool unloads process.
16. the manufacture method of semiconductor device according to claim 14, wherein,
After the fixture unloads process, it is also equipped with strengthening resin filling work procedure, in the reinforcement resin filling work procedure, described
The reinforcement tree of the curved shape for fixing the wiring plate is filled on the inner peripheral surface opposite with the outer peripheral face on wiring plate
Fat.
17. the manufacture method of the semiconductor device according to claim 13 or 14, wherein,
The stationary fixture is thermal component, and the thermal component is used to fixing the curved shape of the wiring plate, and to from institute
The heat that semiconductor element chip is transmitted via the wiring plate is stated to be radiated.
18. a kind of camera device, it has：
Photographing element chip, it has image pickup part in front, overleaf has and is connected via feed throughs with the image pickup part
Splice terminal；
Signal cable, it has the wire being connected with the image pickup part；
Wiring plate, it is formed by central portion and from multiple extended portions that the central portion is extended, and is had：Formed
The bonding electrodes engaged with the splice terminal of the central portion, formation engage in the extended portion with the wire
Terminal electrode, connect the wiring of the bonding electrodes and the terminal electrode and formed and be formed without the engagement electricity
Heat transfer pattern in the region of pole, the terminal electrode and the wiring, by making the extended portion bending by the cloth
Line plate is configured in the perspective plane of the photographing element chip；And
Sealing resin, it is filled in the space between the photographing element chip and the wiring plate, and from the sky
Between along the formation of the wiring plate have the bending section on the outer peripheral face of mounting surface in a thickness direction than the wiring plate
Direction of the mounting surface away from interarea is overflowed,
Wherein, the photographing element chip the back side have with the splice terminal same shape, not with the shooting
The illusory splice terminal of portion's connection,
The wiring plate has illusory engagement electricity with the bonding electrodes same shape, being engaged with the illusory splice terminal
Pole.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-233984 | 2012-10-23 | ||
| JP2012233984A JP6084004B2 (en) | 2012-10-23 | 2012-10-23 | Semiconductor device and method for manufacturing the same |
| JP2012-248676 | 2012-11-12 | ||
| JP2012248676A JP6076048B2 (en) | 2012-11-12 | 2012-11-12 | Imaging apparatus and endoscope |
| PCT/JP2013/077113 WO2014065099A1 (en) | 2012-10-23 | 2013-10-04 | Imaging device, endoscope, semiconductor device, and method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104769720A CN104769720A (en) | 2015-07-08 |
| CN104769720B true CN104769720B (en) | 2018-02-13 |
Family
ID=50544479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380055442.XA Active CN104769720B (en) | 2012-10-23 | 2013-10-04 | Camera device, endoscope, the manufacture method of semiconductor device and semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20150228678A1 (en) |
| EP (2) | EP3417760A1 (en) |
| CN (1) | CN104769720B (en) |
| WO (1) | WO2014065099A1 (en) |
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| JP5966048B1 (en) * | 2015-04-09 | 2016-08-10 | 株式会社フジクラ | Imaging module and endoscope |
| CN107534741A (en) | 2015-04-17 | 2018-01-02 | 奥林巴斯株式会社 | Camera device |
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- 2013-10-04 EP EP18185215.3A patent/EP3417760A1/en not_active Withdrawn
- 2013-10-04 EP EP13849748.2A patent/EP2913850B1/en not_active Not-in-force
- 2013-10-04 WO PCT/JP2013/077113 patent/WO2014065099A1/en active Application Filing
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2015
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Also Published As
| Publication number | Publication date |
|---|---|
| US20150228678A1 (en) | 2015-08-13 |
| EP3417760A1 (en) | 2018-12-26 |
| EP2913850A1 (en) | 2015-09-02 |
| EP2913850B1 (en) | 2018-09-12 |
| WO2014065099A1 (en) | 2014-05-01 |
| EP2913850A4 (en) | 2016-09-21 |
| CN104769720A (en) | 2015-07-08 |
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