CN104766908A - Chain type diffusion non-etching face phosphorus coating device - Google Patents
Chain type diffusion non-etching face phosphorus coating device Download PDFInfo
- Publication number
- CN104766908A CN104766908A CN201510171406.0A CN201510171406A CN104766908A CN 104766908 A CN104766908 A CN 104766908A CN 201510171406 A CN201510171406 A CN 201510171406A CN 104766908 A CN104766908 A CN 104766908A
- Authority
- CN
- China
- Prior art keywords
- acid
- chain type
- outer ring
- boderizing
- making herbs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title abstract description 12
- 238000009792 diffusion process Methods 0.000 title abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 title abstract description 12
- 239000011574 phosphorus Substances 0.000 title abstract description 12
- 239000011248 coating agent Substances 0.000 title abstract description 7
- 238000000576 coating method Methods 0.000 title abstract description 7
- 238000005530 etching Methods 0.000 title abstract 5
- 239000002253 acid Substances 0.000 claims abstract description 72
- 238000003860 storage Methods 0.000 claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 238000005213 imbibition Methods 0.000 claims description 27
- 235000008216 herbs Nutrition 0.000 claims description 20
- 210000002268 wool Anatomy 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 210000005056 cell body Anatomy 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims description 2
- 239000002250 absorbent Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005247 gettering Methods 0.000 description 10
- 102000004160 Phosphoric Monoester Hydrolases Human genes 0.000 description 7
- 108090000608 Phosphoric Monoester Hydrolases Proteins 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000009885 systemic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a chain type diffusion non-etching face phosphorus coating device. The chain type diffusion non-etching face phosphorus coating device comprises a rotating shaft, a liquid absorbing outer ring and an acid storage tank. The liquid absorbing outer ring is fixed to the middle of the rotating shaft. The two ends of the rotating shaft are arranged above the acid storage tank in a rotary mode. An acid inlet is formed in one side of the acid storage tank, an acid outlet is formed below the acid storage tank, and a liquid level sensor is further arranged in the acid storage tank and connected with an acid inlet controller for controlling the acid inlet to be opened and closed. According to the chain type diffusion non-etching face phosphorus coating device, a roller is sufficiently used for carrying phosphoric acid, the back face of a silicon wafer is evenly smeared with the phosphoric acid, the aim of chain type diffusion non-etching face phosphorus coating is achieved accordingly, the phosphorus impurity adsorbing effect is achieved and improved during diffusion, and finally the conversion efficiency of a battery is improved.
Description
Technical field
The present invention relates to silicon chip chain type diffusion equipment technical field, particularly relate to a kind of chain type texturing groove non-making herbs into wool face boderizing equipment.
Background technology
Diffusion is one of committed step of crystal silicon solar batteries manufacture, and conventional diffusion way has tubular type to spread and chain type diffusion, and tubular type diffuses through and passes into phosphorus oxychloride and oxygen, after silicon chip surface generates phosphorus simple substance, inwardly diffuse to form PN junction again.Chain type diffuses through at making herbs into wool face spraying phosphoric acid, generates phosphorus simple substance after acid decomposed by phosphoric acid with pasc reaction.
A large amount of defects and metal impurities are had in polysilicon, these defects and metal impurities can form some deep energy levels, and become the complex centre of charge carrier, affect the efficiency of battery, therefore the impact reducing impurity can improve carrier lifetime to a certain extent, thus improves the efficiency of battery.Gettering mode conventional in production has aluminium gettering and phosphorus gettering, and aluminium gettering is by reaching gettering effect in silicon chip printing aluminium back surface field, and phosphorus gettering reaches gettering effect by expanding phosphorus atoms at silicon chip back surface, and gettering effect is relevant with the concentration of phosphorus atoms.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of chain type and spreading non-making herbs into wool face boderizing device, use this equipment can coat phosphoric acid in the non-making herbs into wool face of silicon chip, make silicon chip back side form finite concentration phosphorus atoms after diffusion, reach the object of phosphorus gettering.
The present invention in order to the technical scheme solving its technical problem and adopt is: a kind of chain type spreads non-making herbs into wool face boderizing device, comprise rotation axis, imbibition outer ring and storage acid tank, described imbibition outer ring is fixed on the centre of rotation axis, the top being located at storage acid tank is rotated at the two ends of described rotation axis, and described storage acid tank side is provided with acid inlet, and the below of storage acid tank is provided with acid mouth, storage acid tank in be also provided with a liquid level sensor, described liquid level sensor connection control acid inlet switch enter sour controller.
As a further improvement on the present invention, the material of described imbibition outer ring is acid-resistant corrosion absorbent material.
As a further improvement on the present invention, the material of described imbibition outer ring is the combination of one or more in acid-resistant corrosion sponge, gauze and screwed roller.
As a further improvement on the present invention, the internal diameter of described imbibition outer ring is 1-10 centimetre, and the external diameter of imbibition outer ring is 2-20 centimetre.
As a further improvement on the present invention, described imbibition outer ring length is 10-200 centimetre.
As a further improvement on the present invention, described storage acid tank is cuboid cell body, and length is 10-200 centimetre, and width is 3-100 centimetre, is highly 3-50 centimetre.
As a further improvement on the present invention, there is travelling gear at described rotation axis two ends, and travelling gear drives by driving-chain and rotates.
As a further improvement on the present invention, described acid mouth is located at the bottom of storage acid tank
As a further improvement on the present invention, described acid inlet is located at storage acid tank side, and acid inlet has by-pass valve control.
As a further improvement on the present invention, described liquid level sensor is by pressure sensor, and capacitance level transducer and electric float liquid level sensor form.
The invention has the beneficial effects as follows: the present invention enables silicon chip also mix phosphorus atoms when diffusion in non-making herbs into wool face, make non-making herbs into wool face form phosphorus gettering effect, improve the life-span of charge carrier, add the efficiency of battery, this equipment is simple and easy to transformation, has good operability.
Accompanying drawing explanation
Fig. 1 is the front view of embodiments of the invention one;
Fig. 2 is the end view of embodiments of the invention one;
Fig. 3 is the front view of embodiments of the invention two;
Fig. 4 is the end view of embodiments of the invention two;
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, and this embodiment only for explaining the present invention, does not form limiting the scope of the present invention.
embodiment one
Fig. 1 is device structure of the present invention, the material of imbibition outer ring 2 is acid-resistant corrosion sponge, the internal diameter of imbibition outer ring 2 is 3 centimetres, the external diameter of imbibition outer ring 2 is 5 centimetres, the length of imbibition outer ring 2 is 100 centimetres, storage acid tank 3 is cuboid cell body, length is 110 centimetres, width is 20 centimetres, be highly 30 centimetres, there is travelling gear at rotation axis 1 two ends, travelling gear drives by driving-chain and rotates, storage acid tank 3 there is acid inlet, acid inlet 4 is in the side of storage acid tank 3, position is close to bottom, storage acid tank 3 there is acid mouth 5, acid mouth 5 is in the bottom of storage acid tank 3, storage acid tank 3 groove inner bottom part has liquid level sensor 7, liquid level sensor 7 is by pressure sensor, capacitance level transducer and electric float liquid level sensor composition.
Liquid level sensor is for measuring the liquid level of phosphoric acid 6 and by the switch of conputer controlled acid inlet, acid inlet is opened when liquid level is too low, and phosphoric acid 6 enters storage acid tank 3 from periphery, when liquid level reach a certain height, and the valve closes of acid inlet 4.Controlling liquid level can make imbibition outer ring 2 part be immersed in phosphoric acid 6 solution, and when roller rotates time, whole imbibition outer ring 3 can be filled phosphoric acid 6 solution.When silicon chip moves above roller, imbibition outer ring 2 contacts with silicon chip, is subject to the extruding of silicon chip weight, and the systemic liquid in imbibition outer ring 3 can outwards overflow, and is stained with the bottom of silicon chip, reaches the object coating phosphoric acid 6 in the non-making herbs into wool face of silicon chip.
embodiment two
Fig. 3 is device structure of the present invention, imbibition outer ring 12 is with one start screw roller, the internal diameter of imbibition outer ring 12 is 2 centimetres, the external diameter of imbibition outer ring 12 is 6 centimetres, the length of imbibition outer ring 2 is 160 centimetres, spacing between one start screw is 5 centimetres, single-threaded height is 0.5 centimetre, single-threaded inclination angle is 60 degree, storage acid tank 13 is cuboid cell body, length is 150 centimetres, width is 30 centimetres, be highly 40 centimetres, there is travelling gear at rotation axis 11 two ends, travelling gear drives by driving-chain and rotates, storage acid tank 13 there is acid inlet, acid inlet 14 is in the side of storage acid tank 13, position is close to bottom, storage acid tank 13 there is acid mouth 15, acid mouth 15 is in the bottom of storage acid tank 13, storage acid tank 13 groove inner bottom part has liquid level sensor 17, liquid level sensor 17 is by pressure sensor, capacitance level transducer and electric float liquid level sensor composition.
Liquid level sensor is for measuring the liquid level of phosphatase 11 6 and by the switch of conputer controlled acid inlet, acid inlet is opened when liquid level is too low, and phosphatase 11 6 enters storage acid tank 13 from periphery, when liquid level reach a certain height, and the valve closes of acid inlet 14.Controlling liquid level can make imbibition outer ring 12 part be immersed in phosphatase 11 6 solution, when roller rotates time, one start screw rolls along with rotation axis 11, phosphatase 11 6 band moves up by the texture structure of screw thread, make single-threaded surface can be stained with phosphatase 11 6, the texture of one start screw surface undulation plays a part to drive and interim savings liquid.When silicon chip moves above roller, screw thread texture contacts with silicon chip, will be stained with the lower surface of silicon chip, reach the object coating phosphatase 11 6 in the non-making herbs into wool face of silicon chip from the phosphatase 11 6 brought up of storage acid tank 13.
Claims (10)
1. a chain type spreads non-making herbs into wool face boderizing device, it is characterized in that: comprise rotation axis, imbibition outer ring and storage acid tank, described imbibition outer ring is fixed on the centre of rotation axis, the top being located at storage acid tank is rotated at the two ends of described rotation axis, described storage acid tank side is provided with acid inlet, storage acid tank below be provided with acid mouth, storage acid tank in be also provided with a liquid level sensor, described liquid level sensor connection control acid inlet switch enter sour controller.
2. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: the material of described imbibition outer ring is acid-resistant corrosion absorbent material.
3. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: the material of described imbibition outer ring is the combination of one or more in acid-resistant corrosion sponge, gauze and screwed roller.
4. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: the internal diameter of described imbibition outer ring is 1-10 centimetre, and the external diameter of imbibition outer ring is 2-20 centimetre.
5. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: described imbibition outer ring length is 10-200 centimetre.
6. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: described storage acid tank is cuboid cell body, and length is 10-200 centimetre, and width is 3-100 centimetre, is highly 3-50 centimetre.
7. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: there is travelling gear at described rotation axis two ends, and travelling gear drives by driving-chain and rotates.
8. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: described acid mouth is located at the bottom of storage acid tank.
9. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: described acid inlet is located at storage acid tank side, and acid inlet has by-pass valve control.
10. chain type according to claim 1 spreads non-making herbs into wool face boderizing device, it is characterized in that: described liquid level sensor is by pressure sensor, and capacitance level transducer and electric float liquid level sensor form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171406.0A CN104766908A (en) | 2014-12-31 | 2015-04-13 | Chain type diffusion non-etching face phosphorus coating device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2014108442166 | 2014-12-31 | ||
| CN201410844216 | 2014-12-31 | ||
| CN201510171406.0A CN104766908A (en) | 2014-12-31 | 2015-04-13 | Chain type diffusion non-etching face phosphorus coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104766908A true CN104766908A (en) | 2015-07-08 |
Family
ID=53648632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510171406.0A Pending CN104766908A (en) | 2014-12-31 | 2015-04-13 | Chain type diffusion non-etching face phosphorus coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104766908A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289894A (en) * | 2020-12-28 | 2021-01-29 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method thereof |
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| US20110065229A1 (en) * | 2009-09-16 | 2011-03-17 | Samsung Electro-Mechnics Co., Ltd. | Method of manufacturing back-surface electrode type solar cell |
| CN201807502U (en) * | 2010-09-17 | 2011-04-27 | 嵊州市新化科技有限公司 | Coating equipment of photovoltaic component back plate |
| JP2011155309A (en) * | 2011-05-16 | 2011-08-11 | Sanyo Electric Co Ltd | Method for manufacturing photovoltaic device |
| CN102412342A (en) * | 2011-11-18 | 2012-04-11 | 浙江波力胜新能源科技有限公司 | Re-diffusion phosphorus gettering acid corrosion impurity removal preparation method for crystalline silicon |
| CN102867738A (en) * | 2012-09-29 | 2013-01-09 | 常州大学 | Method for preparing PN junctions of crystalline silicon solar cells |
| CN103645587A (en) * | 2013-12-13 | 2014-03-19 | 合肥京东方光电科技有限公司 | Alignment layer coating device and method |
| CN103930969A (en) * | 2010-10-04 | 2014-07-16 | 考姆爱斯株式会社 | Film coating apparatus for semiconductor process |
| CN103928573A (en) * | 2014-04-25 | 2014-07-16 | 南开大学 | Silicon wafer phosphorus and aluminum combined temperature varying and impurity suction method for preparing solar cells |
-
2015
- 2015-04-13 CN CN201510171406.0A patent/CN104766908A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110065229A1 (en) * | 2009-09-16 | 2011-03-17 | Samsung Electro-Mechnics Co., Ltd. | Method of manufacturing back-surface electrode type solar cell |
| CN201807502U (en) * | 2010-09-17 | 2011-04-27 | 嵊州市新化科技有限公司 | Coating equipment of photovoltaic component back plate |
| CN103930969A (en) * | 2010-10-04 | 2014-07-16 | 考姆爱斯株式会社 | Film coating apparatus for semiconductor process |
| JP2011155309A (en) * | 2011-05-16 | 2011-08-11 | Sanyo Electric Co Ltd | Method for manufacturing photovoltaic device |
| CN102412342A (en) * | 2011-11-18 | 2012-04-11 | 浙江波力胜新能源科技有限公司 | Re-diffusion phosphorus gettering acid corrosion impurity removal preparation method for crystalline silicon |
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| CN103645587A (en) * | 2013-12-13 | 2014-03-19 | 合肥京东方光电科技有限公司 | Alignment layer coating device and method |
| CN103928573A (en) * | 2014-04-25 | 2014-07-16 | 南开大学 | Silicon wafer phosphorus and aluminum combined temperature varying and impurity suction method for preparing solar cells |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289894A (en) * | 2020-12-28 | 2021-01-29 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method thereof |
| CN114551636A (en) * | 2020-12-28 | 2022-05-27 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method thereof |
| WO2022142474A1 (en) * | 2020-12-28 | 2022-07-07 | 常州时创能源股份有限公司 | Efficient heterojunction solar cell and preparation method |
| CN114551636B (en) * | 2020-12-28 | 2023-11-24 | 常州时创能源股份有限公司 | Efficient heterojunction solar cell and preparation method thereof |
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Application publication date: 20150708 |
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