CN208121242U - Polycrystalline cast ingot crucible - Google Patents
Polycrystalline cast ingot crucible Download PDFInfo
- Publication number
- CN208121242U CN208121242U CN201721071779.1U CN201721071779U CN208121242U CN 208121242 U CN208121242 U CN 208121242U CN 201721071779 U CN201721071779 U CN 201721071779U CN 208121242 U CN208121242 U CN 208121242U
- Authority
- CN
- China
- Prior art keywords
- ingot
- silicon
- ontology
- crucible
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 43
- 229910052710 silicon Inorganic materials 0.000 abstract description 43
- 239000010703 silicon Substances 0.000 abstract description 43
- 238000005266 casting Methods 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 10
- 239000011574 phosphorus Substances 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of polycrystalline cast ingot crucible, the polycrystalline cast ingot crucible includes ontology, and the inner surface of the side wall of the ontology and the inner surface of bottom wall are provided with silicon dioxide layer, is provided with phosphorous layer in the silicon dioxide layer.During ingot casting, phosphorous layer forms a floor high phosphorus area on silicon ingot surface, this floor high phosphorus area is equivalent to Symmicton, and the metal impurities that will be close to silicon ingot surface are adsorbed onto the outer surface of silicon ingot, improve the ingot quality of silicon ingot, avoids silicon ingot pollution crucible.
Description
Technical field
The utility model relates to polysilicon preparation technical field more particularly to a kind of crucibles for being used to prepare polycrystalline cast ingot.
Background technique
Recently as the increasingly depleted of non-renewable energy resources, solar battery has obtained quick development.Due to casting
The preparation process of polysilicon is relatively easy, and cost is far below monocrystalline silicon, and polysilicon gradually replaces pulling of silicon single crystal in solar-electricity
The leading position of pond material market becomes most important photovoltaic material in industry.
Casting polysilicon chip needs to use a kind of important equipment-crucible, but since the silica that crucible uses is pure
Degree is far below purity of silicon, and when casting polycrystal silicon ingot, the impurity in crucible can be spread into silicon ingot, pollutes silicon ingot, causes big
There is inefficient area in ingot side and bottom, and then influence the quality of cast out silicon ingot.
Utility model content
For the above-mentioned technical problems in the prior art, the embodiments of the present invention provide a kind of polycrystalline cast ingot
Use crucible.
In order to solve the above technical problems, the embodiments of the present invention the technical solution adopted is that：
A kind of polycrystalline cast ingot crucible, the polycrystalline cast ingot crucible includes ontology, the inner surface of the side wall of the ontology
It is provided with silicon dioxide layer with the inner surface of bottom wall, is provided with phosphorous layer in the silicon dioxide layer.
Preferably, the ontology is cylindrical shape.
Preferably, the ontology is square tube shape.
Preferably, the thickness range of the silicon dioxide layer is 1um-1000um.
Preferably, the silicon dioxide layer with a thickness of 100um.
Compared with prior art, the beneficial effect of the crucible of polycrystalline cast ingot provided by the embodiments of the present invention is：
1, silicon dioxide layer is during ingot casting, the separation layer being equivalent between ingot casting and ontology, can prevent this
Metal impurities in body directly pollute silicon ingot, so as to effectively improve the purity of silicon ingot.
2, silicon dioxide layer is formed by high-purity silica, and impurity is less, can to a certain extent adsorbing metal it is miscellaneous
Matter reduces the metallic pollution silicon ingot of crucible surface during ingot casting.
3, coated on the phosphorous layer in silicon dioxide layer by can be improved metal in silica to silicon dioxide layer diffusion
Solid solubility in layer reduces dirt of the crucible to silicon ingot so that the metal reduced in ontology is spread into silicon ingot in heat treatment
Dye.
4, coated on the phosphorous layer on ontology inner sidewall during ingot casting, a floor high phosphorus area is formed in silicon ingot side surfaces,
This floor high phosphorus area is exactly a floor Symmicton, and the metal impurities that will be close to silicon ingot side are adsorbed onto the side surfaces of silicon ingot, improves silicon
The ingot quality of ingot side reduces the pollution of silicon ingot side crucible.
5, coated on the phosphorous layer on body bottom portion inner surface during ingot casting, one layer of high phosphorus is formed in silicon ingot bottom surface
Area, this floor high phosphorus area are exactly a floor Symmicton, and the metal impurities that will be close to silicon ingot bottom are adsorbed onto the bottom surface of silicon ingot, are improved
The ingot quality of silicon ingot bottom reduces the pollution of silicon ingot bottom portion crucible.
Detailed description of the invention
Fig. 1 is the main sectional view for the polycrystalline cast ingot crucible that the embodiments of the present invention provide；
The A direction view that Fig. 2 is Fig. 1 (ontology is cylinder)；
The A direction view that Fig. 3 is Fig. 1 (ontology is square tube).
In figure：
10- ontology；11- silicon dioxide layer；12- phosphorous layer.
Specific embodiment
It is with reference to the accompanying drawing and specific real to make those skilled in the art better understand the technical solution of the utility model
Mode is applied to elaborate to the utility model.
As shown in Figure 1 to Figure 3, the embodiments of the present invention disclose a kind of polycrystalline cast ingot crucible, the polycrystalline cast ingot
With crucible for making silicon ingot, which includes ontology 10, and the inner sidewall of ontology 10 and the inner surface of bottom are equal
It is provided with silicon dioxide layer 11, phosphorous layer 12 is provided in silicon dioxide layer 11.Specifically, silicon dioxide layer 11 and phosphorous layer 12
It is formed by way of spraying, but is not limited to the form.
It is above-mentioned to be provided with silica and the crucible of phosphorous layer 12 has the following advantages that：
1, during ingot casting, the separation layer being equivalent between ingot casting and ontology 10 can hinder silicon dioxide layer 11
Only the metal impurities in ontology 10 directly pollute silicon ingot, so as to effectively improve the purity of silicon ingot.
2, silicon dioxide layer 11 is formed by high-purity silica, and impurity is less, can adsorbing metal to a certain extent
Impurity reduces the metallic pollution silicon ingot of crucible surface during ingot casting.
3, coated on the phosphorous layer 12 in silicon dioxide layer 11 by can be improved metal two to the diffusion of silicon dioxide layer 11
Solid solubility in silicon oxide layer 11 reduces crucible pair so that the metal reduced in ontology 10 is spread into silicon ingot in heat treatment
The pollution of silicon ingot.
4, coated on the phosphorous layer 12 on 10 inner sidewall of ontology during ingot casting, one layer of high phosphorus is formed in silicon ingot side surfaces
Area, this floor high phosphorus area are exactly a floor Symmicton, and the metal impurities that will be close to silicon ingot side are adsorbed onto the side surfaces of silicon ingot, are improved
The ingot quality of silicon ingot side reduces the pollution of silicon ingot side crucible.
5, coated on the phosphorous layer 12 on 10 bottom interior surface of ontology during ingot casting, one layer is formed in silicon ingot bottom surface
High phosphorus area, this floor high phosphorus area are exactly a floor Symmicton, and the metal impurities that will be close to silicon ingot bottom are adsorbed onto the bottom surface of silicon ingot,
The ingot quality of silicon ingot bottom is improved, the pollution of silicon ingot bottom portion crucible is reduced.
The shape of ontology 10 can there are many, the shape of ontology 10 depends on the shape of the silicon ingot of required casting, such as Fig. 2
With shown in Fig. 3, for example, ontology 10 can for cylindrical shape, or square tube shape.
The thickness range of the silicon dioxide layer 11 of the inner surface of inner sidewall and bottom coated on ontology 10 is 1um-
1000um.Preferably, the thickness of the silicon dioxide layer 11 of the inner surface of inner sidewall and bottom coated on ontology 10 is
100um。
Above embodiments are only the exemplary embodiment of the utility model, are not used in limitation the utility model, this is practical new
The protection scope of type is defined by the claims.Those skilled in the art can be in the essence and protection scope of the utility model
It is interior, various modifications or equivalent replacements are made to the utility model, this modification or equivalent replacement also should be regarded as falling in originally practical new
In the protection scope of type.
Claims (4)
1. a kind of polycrystalline cast ingot crucible, the polycrystalline cast ingot crucible includes ontology, which is characterized in that the side wall of the ontology
Inner surface and the inner surface of bottom wall be provided with silicon dioxide layer, phosphorous layer, the dioxy are provided in the silicon dioxide layer
The thickness range of SiClx layer is 1um-1000um.
2. polycrystalline cast ingot crucible according to claim 1, which is characterized in that the ontology is cylindrical shape.
3. polycrystalline cast ingot crucible according to claim 1, which is characterized in that the ontology is square tube shape.
4. polycrystalline cast ingot crucible according to claim 1, which is characterized in that the silicon dioxide layer with a thickness of
100um。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721071779.1U CN208121242U (en) | 2017-08-24 | 2017-08-24 | Polycrystalline cast ingot crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721071779.1U CN208121242U (en) | 2017-08-24 | 2017-08-24 | Polycrystalline cast ingot crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208121242U true CN208121242U (en) | 2018-11-20 |
Family
ID=64208183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721071779.1U Expired - Fee Related CN208121242U (en) | 2017-08-24 | 2017-08-24 | Polycrystalline cast ingot crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208121242U (en) |
-
2017
- 2017-08-24 CN CN201721071779.1U patent/CN208121242U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181120 |
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| CF01 | Termination of patent right due to non-payment of annual fee |