CN114990690A - Crucible device for preparing silicon carbide single crystal by vapor phase sublimation method - Google Patents
Crucible device for preparing silicon carbide single crystal by vapor phase sublimation method Download PDFInfo
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- CN114990690A CN114990690A CN202210765802.6A CN202210765802A CN114990690A CN 114990690 A CN114990690 A CN 114990690A CN 202210765802 A CN202210765802 A CN 202210765802A CN 114990690 A CN114990690 A CN 114990690A
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- 239000013078 crystal Substances 0.000 title claims abstract description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- 238000005092 sublimation method Methods 0.000 title claims abstract description 12
- 239000012808 vapor phase Substances 0.000 title claims description 8
- 239000000843 powder Substances 0.000 claims abstract description 93
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims abstract description 9
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 9
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 8
- 239000010439 graphite Substances 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000000859 sublimation Methods 0.000 claims description 9
- 230000008022 sublimation Effects 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 abstract description 14
- 230000008025 crystallization Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 20
- 238000003763 carbonization Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a crucible device for preparing silicon carbide single crystals by a vapor sublimation method, which comprises a crucible main body and a crucible top cover, wherein the crucible main body is internally provided with a cavity, a silicon carbide powder source is contained at the bottom in the cavity, the crucible top cover is positioned at a sealing position above the crucible main body, one surface of the crucible top cover, which faces the crucible main body, comprises seed crystals, an additional powder source containing block with a heat conduction effect is arranged on the inner side wall of the crucible main body, the additional powder source containing block is a solid graphite container with the property of a porous material, at least one surface of the additional powder source containing block faces the cavity, and a simple substance silicon powder source or a simple substance carbon powder source is contained in the additional powder source containing block. The invention has simple structure, can adjust the content of gas phase components in the crucible, maintain the balance of each substance component in the gas phase, reduce the crystallization defect caused by uneven distribution of the gas phase components in the crystal crystallization process, and realize the rapid and high-quality growth of the silicon carbide single crystal.
Description
Technical Field
The invention belongs to the technical field of silicon carbide single crystal preparation, and particularly relates to a crucible device for preparing silicon carbide single crystals by a vapor phase sublimation method.
Background
Silicon carbide is a third generation semiconductor with excellent properties, and is widely used for manufacturing excellent semiconductor power devices due to its excellent physicochemical properties such as high temperature and high pressure resistance and low loss. Methods for producing silicon carbide single crystals are mainly classified into liquid phase methods, physical vapor sublimation methods, and chemical vapor deposition methods. At present, the physical vapor sublimation method has the advantages of high crystal growth speed, high crystal growth quality, less pollution and the like, and is widely applied.
In the process of growing the silicon carbide single crystal by the physical vapor sublimation method, the silicon carbide powder source is contained in the crucible, and the crucible generates a large amount of heat to heat the powder source under the action of the induction magnetic field, so that the powder source in the crucible is sublimated to the surface of the seed crystal to crystallize the silicon carbide single crystal. However, during the sublimation of the silicon carbide powder source, the growth environment such as temperature and pressure may cause the phenomenon of silicon enrichment or carbonization enrichment of the surface of the powder source at the silicon carbide powder source during the vapor phase sublimation of the silicon carbide powder source, and the phenomenon of silicon enrichment or carbonization enrichment in the vapor phase component also exists in the crystal growth space of the crucible inner cavity, especially in the vicinity of the crystal growth boundary surface. Silicon-rich or carbon-rich growth on the surface of the silicon carbide powder source or near the crystal interface of the silicon carbide single crystal is likely to cause formation of defects during the growth of the crystal, and is not favorable for the production of high-quality silicon carbide single crystals.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the crucible device for preparing the silicon carbide single crystal by the gas phase sublimation method, which has a simple structure, can adjust the content of gas phase components in the crucible, maintain the balance of all the substance components in the gas phase, reduce the crystallization defects caused by the uneven distribution of the gas phase components in the crystal crystallization process and realize the rapid and high-quality growth of the silicon carbide single crystal.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a crucible device for gaseous phase sublimation method preparation carborundum single crystal, includes crucible main part and crucible top cap, the cavity is contained in the crucible main part, carborundum powder source has been accomodate to the bottom in the cavity, the crucible top cap is located crucible main part top seal department, the one side that the crucible top cap is towards the crucible main part includes the seed crystal, crucible main part inside wall is provided with the additional powder source that has the heat conduction and accomodates the piece, the piece is accomodate to the additional powder source for the solid graphite container that has porous material nature and it has at least one face towards the cavity, accomodate simple substance silicon powder source or simple substance carbon powder source in the piece is accomodate to the additional powder source.
Furthermore, the additional powder source receiving blocks are embedded into the inner side wall of the crucible main body and are arranged in N numbers along the axial direction of the crucible main body, and N is more than or equal to 1. The elemental silicon powder source or the elemental carbon powder source is contained in the additional powder source containing block, under the heating condition, the elemental powder source in the additional powder source containing block is released into the cavity of the crucible main body from the containing block at a certain speed, so that the content of gas-phase components in the cavity is adjusted, the balance of each substance component in the gas phase is maintained, the negative influence of rich silicification or rich carbonization on the surface of the silicon carbide powder source on crystal growth is reduced, and the negative influence of rich silicification or rich carbonization in a crystal growth region in the crucible main body, particularly in the gas-phase components near the crystallization interface of the silicon carbide single crystal, on crystal growth is reduced.
Further, the thickness of the additional powder source accommodating block does not exceed 1/2 the thickness of the side wall of the crucible body.
Further, when N > 1, the thicknesses of the N additional powder source holding pieces are the same or different.
Further, when N > 1, the elemental powder sources contained in the N additional powder source containing blocks may be the same or different.
Further, when N > 1, the height of each of the additional powder source accommodating blocks does not exceed 1/N of the height of the cavity of the crucible body.
Further, the heights of the N additional powder source storage blocks are the same or different.
Further, the porosity of the additional powder source housing block is 10% to 80%.
Further, when N > 1, the porosities of the N additional powder-source-receiving blocks are the same or different. The rate at which the powder source in the additional powder source receiving block sublimes and is released into the cavity space of the crucible body is determined by the factors such as the geometry, the size, the porosity of the porous material, etc. of the additional powder source receiving block itself, and the difference in the factors causes the possibility that the rate at which the powder source contained therein diffuses into the cavity space of the crucible body may be different.
Compared with the prior art, the invention has the following beneficial effects:
the invention has simple structure, can adjust the content of gas phase components in the crucible, maintain the balance of each substance component in the gas phase, reduce the crystallization defect caused by uneven distribution of the gas phase components in the crystal crystallization process, and realize the rapid and high-quality growth of the silicon carbide single crystal. The additional powder source containing block is a solid graphite container with the property of porous material and has the function of heat conduction, an elemental silicon powder source or an elemental carbon powder source is contained in the additional powder source containing block, the crucible body generates heat under the action of an induction magnetic field and heats the silicon carbide powder source contained in the cavity, the silicon carbide powder source is heated and sublimated and then crystallized on the surface of the seed crystal, the heat is introduced into the additional powder source containing block through the side wall of the crucible body, the elemental powder source contained in the additional powder source containing block is released into the cavity from the containing block at a certain speed under the heating condition to adjust the content of gas phase components in the cavity, the balance of all material components in the gas phase is maintained, the negative influence of rich silicification or rich carbonization on the long crystal on the surface of the silicon carbide powder source is reduced, the negative influence of rich silicification or rich carbonization in a long crystal area in the crucible body, particularly the gas phase components near the crystal interface of the silicon carbide single crystal on the long crystal is reduced, the method achieves the aims of reducing the crystallization defects caused by uneven distribution of gas phase components in the crystallization process of the crystal and realizing the rapid and high-quality growth of the silicon carbide single crystal.
Drawings
Fig. 1 is a cross-sectional view of the overall structure of the embodiment of the present invention.
FIG. 2 is a schematic view of a crucible main body structure according to an embodiment of the present invention.
The method comprises the following steps of 1-crucible top cover, 2-seed crystal, 3-crucible body, 4-additional powder source accommodating block, 401-upper additional powder source accommodating block, 402-middle additional powder source accommodating block, 403-lower additional powder source accommodating block and 5-silicon carbide powder source.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention is further illustrated by the following examples, which are not to be construed as limiting the invention.
The crucible device for preparing the silicon carbide single crystal by the vapor phase sublimation method, which is shown in the figure, comprises a crucible main body 3 and a crucible top cover 1, wherein the crucible main body 3 is internally provided with a cavity, a silicon carbide powder source 5 is contained at the bottom in the cavity, the crucible top cover 1 is positioned at the sealing position above the crucible main body 3, one surface of the crucible top cover 1, which faces the crucible main body 3, comprises a seed crystal 2, the inner side wall of the crucible main body 3 is provided with an additional powder source containing block 4 with a heat conduction effect, the additional powder source containing block 4 is a solid graphite container with the property of a porous material, and at least one surface of the solid graphite container faces the cavity, and the additional powder source containing block 4 is internally provided with a simple substance silicon powder source or a simple substance carbon powder source. The additional powder source containing block is a solid graphite container with porous material property and has a heat conduction function, an elemental silicon powder source or an elemental carbon powder source is contained in the additional powder source containing block, the crucible main body generates heat under the action of an induction magnetic field and heats the silicon carbide powder source contained in the cavity, the silicon carbide powder source is heated and sublimated and then crystallized on the surface of seed crystal, the heat is introduced into the additional powder source containing block through the side wall of the crucible main body, the elemental powder source contained in the additional powder source containing block is released into the cavity from the containing block at a certain speed under the heating condition so as to adjust the content of gas phase components in the cavity, maintain the balance of each substance component in the gas phase, reduce the negative influence of silicification or carbonization of the surface of the silicon carbide powder source on crystal growth, reduce the negative influence of silicification or carbonization of the gas phase components near the crystal interface of the silicon carbide single crystal on the crystal growth in the crucible main body, the method achieves the aims of reducing the crystallization defects caused by uneven distribution of gas phase components in the crystallization process of the crystal and realizing the rapid and high-quality growth of the silicon carbide single crystal. The invention has simple structure, can adjust the content of gas phase components in the crucible, maintain the balance of each substance component in the gas phase, reduce the crystallization defect caused by uneven distribution of the gas phase components in the crystal crystallization process, and realize the rapid and high-quality growth of the silicon carbide single crystal.
Preferably, the additional powder source accommodating blocks 4 are embedded in the inner side wall of the crucible main body 3 and are arranged in N numbers along the axial direction of the crucible main body 3, wherein N is more than or equal to 1. The elemental silicon powder source or the elemental carbon powder source is contained in the additional powder source containing block, under the heating condition, the elemental powder source in the additional powder source containing block is released into the cavity of the crucible main body from the containing block at a certain speed, so that the content of gas-phase components in the cavity is adjusted, the balance of each substance component in the gas phase is maintained, the negative influence of rich silicification or rich carbonization on the surface of the silicon carbide powder source on crystal growth is reduced, and the negative influence of rich silicification or rich carbonization in a crystal growth region in the crucible main body, particularly in the gas-phase components near the crystallization interface of the silicon carbide single crystal, on crystal growth is reduced.
In the embodiment provided by the present invention, the number of the additional powder source housing blocks is 3, and the additional powder source housing blocks are an upper additional powder source housing block 401, a middle additional powder source housing block 402, and a lower additional powder source housing block 403, respectively.
Preferably, the thickness of the additional powder source accommodating block 4 does not exceed 1/2 the thickness of the side wall of the crucible main body 3.
Preferably, when N > 1, the thicknesses of the N additional powder source holding pieces 4 are the same or different. In the embodiment provided by the present invention, the thickness of the 3 additional powder source containing blocks is the same.
Preferably, when N > 1, the elemental powder sources stored in the N additional powder source storage blocks 4 are the same or different. The elemental powder source stored in the additional powder source storage block is an elemental silicon powder source or an elemental carbon powder source, but not a mixture of the two.
Preferably, when N > 1, the height of each additional powder source housing block 4 does not exceed 1/N of the cavity height of the crucible main body 3.
Preferably, the heights of the N additional powder source holding pieces 4 are the same or different. In the embodiment of the present invention, the upper additional powder source housing block 401, the middle additional powder source housing block 402, and the lower additional powder source housing block 403 are the same in height.
Preferably, the porosity of the additional powder source housing block 4 is 10% to 80%.
Preferably, when N > 1, the porosities of the N additional powder-source holding pieces 4 are the same or different.
In the embodiment provided by the invention, the dimensional relation design of the additional powder source receiving block and the crucible main body is as follows:
δ0≥2δ1；
δ0≥2δ2；
δ0≥2δ3；
h0≥3h1；
h0≥3h2；
h0≥3h3；
wherein δ 0 is a thickness of a side wall of the crucible main body (length in a horizontal direction), δ 1 is a thickness of the upper additional powder source holding block (length in a horizontal direction), δ 2 is a thickness of the middle additional powder source holding block (length in a horizontal direction), δ 3 is a thickness of the lower additional powder source holding block (length in a horizontal direction), h0 is a maximum height of the cavity of the crucible main body, h1 is a height of the upper additional powder source holding block (length in a vertical direction), h2 is a height of the middle additional powder source holding block (length in a vertical direction), h3 is a height of the lower additional powder source holding block (length in a vertical direction), reference dimensions given in fig. 1-2 are:
δ0＝2δ1；
δ1＝δ2；
δ1＝δ3；
h0＝8h1；
h1＝h2；
h1＝h3；
further, as a solid graphite container having a porous material property, the porosity of the additional powder source containing block has the following relationship:
10％≤Υ1≤80％；
10％≤Υ2≤80％；
10％≤Υ3≤80％；
The rate at which the powder source in the additional powder source receiving block sublimes and is released into the cavity space of the crucible body is determined by the factors such as the geometry, the size, the porosity of the porous material, etc. of the additional powder source receiving block itself, and the difference in the factors causes the possibility that the rate at which the powder source contained therein diffuses into the cavity space of the crucible body may be different.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (9)
1. A crucible device for preparing silicon carbide single crystal by a vapor phase sublimation method is characterized in that: including crucible main part (3) and crucible top cap (1), contain the cavity in crucible main part (3), carborundum powder source (5) have been accomodate to the bottom in the cavity, crucible top cap (1) is located crucible main part (3) top and seals the department, crucible top cap (1) includes seed crystal (2) towards the one side of crucible main part (3), crucible main part (3) inside wall is provided with additional powder source that has the heat conduction and accomodates piece (4), additional powder source is accomodate piece (4) and is had at least one face towards the cavity for the solid graphite container that has the porous material property, accomodate simple substance silicon powder source or simple substance carbon powder source in additional powder source is accomodate piece (4).
2. A crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 1, characterized in that: the additional powder source containing blocks (4) are embedded into the inner side wall of the crucible main body (3) and are arranged in N numbers along the axial direction of the crucible main body (3), and N is more than or equal to 1.
3. The crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 2, characterized in that: the thickness of the additional powder source accommodating block (4) does not exceed 1/2 the thickness of the side wall of the crucible main body (3).
4. A crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 3, characterized in that: when N > 1, the thicknesses of the N additional powder source holding pieces (4) are the same or different.
5. The crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 2, characterized in that: when N is more than 1, the elementary powder sources stored in the N additional powder source storage blocks (4) are the same or different.
6. The crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 2, characterized in that: when N is more than 1, the height of each additional powder source receiving block (4) does not exceed 1/N of the cavity height of the crucible main body (3).
7. A crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 6, characterized in that: the heights of the N additional powder source containing blocks (4) are the same or different.
8. The crucible apparatus for producing a silicon carbide single crystal by the vapor phase sublimation method according to any one of claims 2 to 7, wherein: the porosity of the additional powder source containing block (4) is 10 to 80%.
9. The crucible apparatus for producing a silicon carbide single crystal by vapor sublimation according to claim 8, wherein: when N > 1, the porosities of the N additional powder source housing blocks (4) are the same or different.
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| CN202210765802.6A CN114990690B (en) | 2022-06-30 | 2022-06-30 | Crucible device for preparing silicon carbide monocrystal by gas phase sublimation method |
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| CN202210765802.6A CN114990690B (en) | 2022-06-30 | 2022-06-30 | Crucible device for preparing silicon carbide monocrystal by gas phase sublimation method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115305573A (en) * | 2022-10-11 | 2022-11-08 | 浙江晶越半导体有限公司 | Crucible for growth of silicon carbide crystal by physical vapor phase method for optimizing thermal field |
| CN115491759A (en) * | 2022-11-16 | 2022-12-20 | 浙江晶越半导体有限公司 | Additional powder source container and crucible device for preparing silicon carbide single crystal |
| CN115679449A (en) * | 2022-12-30 | 2023-02-03 | 浙江晶越半导体有限公司 | Composite crucible for growing silicon carbide crystals by sublimation method |
| CN115838963A (en) * | 2022-12-30 | 2023-03-24 | 浙江晶越半导体有限公司 | Be applied to crucible device of sublimation method growth carborundum single crystal |
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| US20150068457A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Apparatus for producing bulk silicon carbide |
| CN207267900U (en) * | 2017-10-20 | 2018-04-24 | 苏州奥趋光电技术有限公司 | A kind of multisection type crucible device for aluminum-nitride single crystal growth |
| CN209144310U (en) * | 2018-11-02 | 2019-07-23 | 山东天岳先进材料科技有限公司 | A kind of device for silicon carbide monocrystal growth |
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| US20150068457A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Apparatus for producing bulk silicon carbide |
| CN207267900U (en) * | 2017-10-20 | 2018-04-24 | 苏州奥趋光电技术有限公司 | A kind of multisection type crucible device for aluminum-nitride single crystal growth |
| CN209144310U (en) * | 2018-11-02 | 2019-07-23 | 山东天岳先进材料科技有限公司 | A kind of device for silicon carbide monocrystal growth |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115305573A (en) * | 2022-10-11 | 2022-11-08 | 浙江晶越半导体有限公司 | Crucible for growth of silicon carbide crystal by physical vapor phase method for optimizing thermal field |
| CN115491759A (en) * | 2022-11-16 | 2022-12-20 | 浙江晶越半导体有限公司 | Additional powder source container and crucible device for preparing silicon carbide single crystal |
| CN115679449A (en) * | 2022-12-30 | 2023-02-03 | 浙江晶越半导体有限公司 | Composite crucible for growing silicon carbide crystals by sublimation method |
| CN115838963A (en) * | 2022-12-30 | 2023-03-24 | 浙江晶越半导体有限公司 | Be applied to crucible device of sublimation method growth carborundum single crystal |
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| CN114990690B (en) | 2024-02-27 |
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