CN114551636A - High-efficiency heterojunction solar cell and preparation method thereof - Google Patents
High-efficiency heterojunction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN114551636A CN114551636A CN202111597429.XA CN202111597429A CN114551636A CN 114551636 A CN114551636 A CN 114551636A CN 202111597429 A CN202111597429 A CN 202111597429A CN 114551636 A CN114551636 A CN 114551636A
- Authority
- CN
- China
- Prior art keywords
- chain type
- silicon wafer
- gettering
- cleaning
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 151
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 151
- 239000010703 silicon Substances 0.000 claims abstract description 151
- 238000005247 gettering Methods 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000012535 impurity Substances 0.000 claims abstract description 67
- 238000004140 cleaning Methods 0.000 claims abstract description 49
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 239000003513 alkali Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 156
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a high-efficiency heterojunction solar cell and a preparation method thereof, wherein the preparation method is characterized in that a gettering process is added before a preparation process of a conventional heterojunction solar cell, and the gettering process is completed through a full-chain type gettering process; the full-chain type impurity absorption process comprises the following steps: performing chain type pre-cleaning on the silicon wafer; coating a gettering source on the surface of the silicon wafer in a chain manner; and performing chain type high-temperature gettering on the silicon wafer. According to the preparation method, the metal impurity content of the N-type monocrystalline silicon wafer is reduced, the quality level of the silicon wafer is improved, the difference between the silicon wafers is reduced, and the conversion efficiency of the heterojunction solar cell is improved; the quality of the N-type monocrystalline silicon wafer tends to be consistent, the efficiency distribution of the prepared heterojunction solar cell is more concentrated, the discreteness of the efficiency distribution is reduced, and the product consistency is greatly improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a high-efficiency heterojunction solar cell and a preparation method thereof.
Background
With the continuous development of the photovoltaic industry, the high-efficiency N-type crystalline silicon battery is a necessary choice for a high-efficiency battery technology route due to natural advantages of high minority carrier lifetime, no light-induced attenuation and the like, and is also a new-generation battery technology which is entering large-scale production in the photovoltaic industry. The heterojunction solar cell has a high conversion efficiency, and the process is simple, so that the heterojunction solar cell is widely concerned, and an N-type monocrystalline silicon wafer is generally used for obtaining higher conversion efficiency.
The process temperature of the manufacturing process of the heterojunction solar cell needs to be controlled to be finished at a low temperature, the temperature is generally not more than 200 ℃, the whole process does not have a high-temperature diffusion process to getter the silicon wafer, therefore, the quality fluctuation of raw material silicon wafers has great influence on the heterojunction solar cell, and because metal impurities contained in the silicon wafer which is not subjected to high-temperature gettering can form a deep-level composite center in the cell, particularly, in a straight-pull monocrystalline silicon rod, the content of the metal impurities in different regions is different, so that the conversion efficiency distribution of the heterojunction solar cell is not concentrated, the discreteness is large, the product consistency is poor, the requirement of the cell on the content of the metal impurities of the silicon wafer is high, the requirement on the quality of the silicon wafer is more and more strict, and the quantity of the N-type monocrystalline silicon wafers which can be used for the heterojunction solar cell in the whole monocrystalline silicon rod is reduced.
On the other hand, the gettering process commonly used in the industry at present is generally a tubular diffusion process similar to that in the conventional process, that is, the cleaned silicon wafer is subjected to source deposition and propulsion in a high-temperature tubular device to achieve gettering. The method has the disadvantages of complex impurity absorption and complex process flow, the time consumption is long because the silicon wafer needs to be assembled and disassembled every time one procedure is completed, a cleaning device and a furnace tube device need to be added, and the labor for loading and unloading and carrying needs to be added for each corresponding device, so that the manufacturing cost of the battery is very high.
In summary, it is very important to introduce the gettering process into the process flow of the heterojunction solar cell.
Disclosure of Invention
One of the objectives of the present invention is to provide a method for manufacturing a high efficiency heterojunction solar cell, which can improve the quality level of a silicon wafer, realize a high conversion efficiency heterojunction solar cell, and simultaneously shorten the manufacturing time of the heterojunction solar cell and simplify the process flow.
The second purpose of the invention is to provide a full-chain type impurity absorbing device.
A third object of the present invention is to propose a high efficiency heterojunction solar cell prepared by the above method.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a preparation method of a high-efficiency heterojunction solar cell is characterized in that a gettering process is added before a conventional heterojunction solar cell preparation process, and the gettering process is completed through a full-chain gettering process;
the full-chain type impurity absorbing process comprises the following steps:
performing chain type pre-cleaning on the silicon wafer;
coating a gettering source on the surface of a silicon wafer in a chain manner;
and performing chain type high-temperature gettering on the silicon wafer.
Preferably, the silicon wafer is an N-type monocrystalline silicon wafer.
Preferably, the gettering source is a liquid source.
Preferably, the liquid source may be one of a phosphoric acid solution, a phosphorous-containing slurry or a boron-containing slurry.
Preferably, the pre-chain washing comprises lye washing.
Preferably, the alkali liquor is a NaOH solution with the mass percentage concentration of 1-3% or a KOH solution with the mass percentage concentration of 1-3%.
Preferably, the method further comprises the step of carrying out acid liquor cleaning on the silicon wafer after the alkali liquor cleaning.
Preferably, the acid solution is an HF solution with the mass percentage concentration of 1-10%.
Preferably, the temperature of the chain type high-temperature gettering is 500-800 ℃ and the time is 2-20 min.
Preferably, after the silicon wafer is subjected to chain type high-temperature gettering, the silicon wafer is subjected to chain type post-cleaning.
Preferably, the chained post-cleaning is performed by cleaning with an HF solution with the mass percentage concentration of 1-5%.
The invention also provides full-chain type impurity absorbing equipment based on the full-chain type impurity absorbing process, which comprises a chain type pre-cleaning functional area, a chain type coating impurity absorbing source functional area, a chain type high-temperature impurity absorbing functional area and a conveying device penetrating through each functional area, wherein the chain type pre-cleaning functional area, the chain type coating impurity absorbing source functional area and the chain type high-temperature impurity absorbing functional area are sequentially connected, and the silicon wafer is sequentially conveyed to the chain type pre-cleaning functional area, the chain type coating impurity absorbing source functional area and the chain type high-temperature impurity absorbing functional area through the conveying device to complete the full-chain type impurity absorbing process.
Preferably, the full-chain type impurity absorbing equipment further comprises a chain type post-cleaning functional area positioned behind the chain type high-temperature impurity absorbing functional area.
The invention also provides the high-efficiency heterojunction solar cell prepared by the method.
The invention provides a preparation method of a high-efficiency heterojunction solar cell, which can reduce the content of metal impurities of an N-type monocrystalline silicon wafer, improve the quality level of the silicon wafer, reduce the quality fluctuation of a wafer source, enable the quality of the silicon wafer to be in a controllable stable state, improve the utilization rate of the N-type monocrystalline silicon wafer on the heterojunction solar cell, improve the concentration of the conversion efficiency distribution of the heterojunction solar cell and improve the product consistency. Specifically, a gettering process is added before a conventional heterojunction solar cell preparation process, the gettering process is completed through a full-chain type gettering process, namely, the gettering process can be completed through a full-chain type device, and the method sequentially comprises the steps of performing chain type pre-cleaning on a silicon wafer, performing chain type coating gettering sources on the surface of the silicon wafer, performing chain type high-temperature gettering on the silicon wafer, and performing chain type post-cleaning on the silicon wafer. In the invention, the surface of the silicon wafer cleaned before the chain type is coated with a layer of gettering source through chain type equipment, wherein the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source, and then the gettering is completed through high-temperature heat treatment through a chain type annealing furnace. In the process of gettering, the propulsion of phosphorus element forms N on the surface of the silicon chip+Doping layer, or boron element pushing to form P doping layer on the surface of silicon wafer, wherein siliconImpurity atoms in the wafer also face the surface N+The doped layer or P-doped layer is migrated and diffused and fixed at N+And in the doping layer or the P doping layer, a gettering layer is formed on the surface of the silicon wafer, and finally the gettering layer on the surface of the silicon wafer is removed through alkali liquor corrosion in the subsequent texturing step, so that the aim of reducing the content of metal impurities in the silicon wafer is fulfilled.
Has the advantages that: compared with the prior art, the invention has the following advantages:
(1) according to the preparation method, the metal impurity content of the N-type monocrystalline silicon wafer is reduced, the quality level of the silicon wafer is improved, the influence of wafer source quality fluctuation on the efficiency of the solar cell is reduced, the difference between the silicon wafers is reduced, the conversion efficiency of the heterojunction solar cell is improved, and the high-efficiency heterojunction solar cell can be realized;
(2) the preparation method of the invention leads the quality of the N-type monocrystalline silicon wafer to be consistent, the efficiency distribution of the prepared heterojunction solar cell is more concentrated, the discreteness of the efficiency distribution is reduced, and the product consistency is greatly improved;
(3) the high-efficiency heterojunction solar cell prepared by the invention reduces the edge leakage rate of the cell and improves the yield of the cell;
(4) the full-chain type impurity absorption equipment shortens the circulation time of the silicon wafer in the manufacturing process, reduces the pollution probability of the silicon wafer, improves the conversion efficiency of the battery to a certain extent, has short process time, low energy consumption, low production cost and high automation degree, and is beneficial to industrialized popularization and use.
Drawings
Figure 1 is a process flow diagram for the preparation of a heterojunction solar cell of example 1 of the invention;
figure 2 is a process flow diagram for the preparation of a heterojunction solar cell of example 3 of the invention;
fig. 3 is a box plot of the conversion efficiencies of the heterojunction solar cells prepared in examples 1-3 of the present invention and the comparative example.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
According to the preparation method of the high-efficiency heterojunction solar cell, as shown in fig. 1, a gettering process is added before the conventional heterojunction solar cell is manufactured, the gettering process is a full-chain type gettering process, and the gettering process can be completed through a full-chain type gettering device.
Specifically, the full-chain type gettering process comprises the following steps:
(a) carrying out chain type pre-cleaning on the silicon wafer: carrying out alkali liquor cleaning on the silicon wafer by adopting a NaOH solution with the mass percentage concentration of 1-3% or a KOH solution with the mass percentage concentration of 1-3%, and then carrying out acid liquor cleaning on the silicon wafer by adopting an HF solution with the mass percentage concentration of 1-10%;
(b) performing chain coating on the surface of a silicon wafer with a gettering source: the surface of the silicon chip is coated with phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry in a chain manner and dried;
(c) performing chain type high-temperature gettering on the silicon wafer: the temperature of the chain type high-temperature gettering is 500-800 ℃, and the time is 2-20 min.
In the present invention, the silicon wafer refers to an N-type single crystal silicon wafer.
Through the full-chain process, the quality level of the silicon wafer is consistent, the efficiency distribution concentration of the heterojunction solar cell is improved, and the product performance consistency is improved. However, due to the fact that the oxidation layer exists on the surface of the silicon wafer after chain type high-temperature gettering, the oxidation layer can affect the speed of removing the gettering layer during subsequent silicon wafer texturing, the gettering layer of the silicon wafer with the thick oxidation layer is slowly removed, the gettering layer of the silicon wafer with the thin oxidation layer is quickly removed, the removal effect of the gettering layer can be hindered under severe conditions, the size of a pyramid in the texturing surface can be greatly different due to the speed of removing the gettering layer, the uniformity of the texturing surface between the silicon wafer and the silicon wafer is poor, and the fluctuation of the conversion efficiency of the manufactured heterojunction solar cell is increased accordingly. Therefore, the full-chain process of the invention further comprises the following steps after the step of chain type high-temperature gettering is carried out on the silicon wafer:
(d) carrying out chain type post-cleaning on the silicon wafer: and cleaning the silicon wafer by adopting an HF solution with the mass percentage concentration of 1-5%.
When the silicon wafer cleaned in the chained mode is subjected to texturing again, the texturing liquid is directly contacted with the impurity absorbing layer in the reaction process, the reaction speed tends to be consistent, and further the uniformity of the texturing surface also tends to be consistent. Through the steps, the quality difference between the silicon wafers is reduced to the minimum, the quality level among the silicon wafers is more consistent particularly after the gettering layer is removed, the size of the texture pyramid among the silicon wafers after texturing is more uniform, the heterojunction solar cell with high conversion efficiency is favorably realized, the dispersion of the cell efficiency distribution is reduced, and the product consistency is improved.
As a preferred alternative scheme of the invention, the full-chain type impurity absorbing process can comprise the steps of respectively carrying out chain type coating impurity absorbing source and chain type high-temperature impurity absorbing on the silicon wafer, and then combining groove type front cleaning and groove type rear cleaning; or the method comprises respectively performing chain type pre-cleaning, chain type coating impurity absorption source and chain type high temperature impurity absorption on the silicon wafer, and combining groove type post-cleaning.
The full-chain type impurity absorbing equipment for completing the full-chain type impurity absorbing process can comprise a chain type coating impurity absorbing source functional area and a chain type high-temperature impurity absorbing functional area as a preferred alternative scheme; or the device comprises a chain type pre-cleaning functional area, a chain type coating gettering source functional area and a chain type high-temperature gettering functional area; or the device comprises a chain type pre-cleaning functional area, a chain type coating gettering source functional area, a chain type high-temperature gettering functional area and a chain type post-cleaning functional area; the equipment conveys the silicon wafer to each functional area through a conveying device to complete a full-chain type impurity absorbing process.
Example 1
A preparation method of a high-efficiency heterojunction solar cell specifically comprises the following steps:
(1) taking 1200N-type monocrystalline silicon wafers, and carrying out full-chain impurity absorption on the silicon wafers through full-chain impurity absorption equipment, wherein the full-chain impurity absorption equipment comprises the following steps:
(a) carrying out chain type pre-cleaning on the silicon wafer: the silicon wafer is conveyed into a chain type front cleaning functional area through a conveying roller, is cleaned by NaOH solution with the mass percentage concentration of 1%, is cleaned by HF solution with the mass percentage concentration of 5% after being washed, and is dried after being washed, so that organic matters, damaged layers, metal impurities and oxide layers on the surface of the silicon wafer are removed, and the cleanliness of the surface of the silicon wafer is improved;
(b) performing chain coating on the surface of a silicon wafer with a gettering source: conveying the dried silicon wafer into a chain type coating impurity-absorbing source functional area through a conveying roller, coating a layer of phosphorus-containing slurry on the surface of the silicon wafer through a coating device, extruding through the conveying roller to uniformly coat the phosphorus-containing slurry on the surface of the silicon wafer and remove redundant phosphorus-containing slurry, and drying;
(c) performing chain type high-temperature gettering on the silicon wafer: the silicon wafer coated with the phosphorus-containing slurry on the surface is conveyed into a chain type high-temperature impurity-absorbing functional area through a conveying roller, and at the moment, the silicon wafer is subjected to heat treatment for 2min at 500-800 ℃ through a chain type annealing furnace to complete the propulsion of phosphorus element, and N is formed on the surface of the silicon wafer+Doping layer, and simultaneously, impurity atoms in the silicon wafer body face to surface N+The doped layer is migrated and diffused and fixed on the surface N+In the doped layer, completing gettering, at this time, N on the surface of the silicon wafer+The doped layer is a gettering layer, N+An oxide layer, specifically a phosphorosilicate glass layer, is distributed on the doping layer;
(d) carrying out chain type post-cleaning on the silicon wafer: conveying the gettered silicon wafer into a chain type post-cleaning functional area through a conveying roller, and cleaning the silicon wafer by adopting an HF solution with the mass percentage concentration of 1% for removing an oxide layer on the surface of the silicon wafer;
(2) alkali texturing is carried out on the silicon wafer after impurity absorption, and an impurity absorption layer on the surface of the silicon wafer is removed during texturing;
(3) depositing an intrinsic amorphous silicon layer on the front side and the back side of the textured silicon wafer;
(4) depositing a doped amorphous silicon layer on the front and back surfaces of the intrinsic amorphous silicon layer;
(5) depositing a transparent conductive film on the front and back surfaces of the silicon wafer;
(6) screen printing metal electrodes on the front and back surfaces of the silicon wafer;
(7) and sintering the silicon wafer at low temperature to obtain the high-efficiency heterojunction solar cell.
Example 2
A preparation method of a high-efficiency heterojunction solar cell specifically comprises the following steps:
(1) taking 1200N-type monocrystalline silicon wafers, and carrying out full-chain impurity absorption on the silicon wafers through full-chain impurity absorption equipment, wherein the full-chain impurity absorption equipment comprises the following steps:
(a) carrying out chain type pre-cleaning on the silicon wafer: the silicon wafer is conveyed into a chain type pre-cleaning functional area through a conveying roller, is cleaned by KOH solution with the mass percentage concentration of 1%, is cleaned by HF solution with the mass percentage concentration of 1% after being washed, and is dried after being washed, so that organic matters, damaged layers, metal impurities and oxide layers on the surface of the silicon wafer are removed, and the cleanliness of the surface of the silicon wafer is improved;
(b) performing chain coating on the surface of a silicon wafer with a gettering source: conveying the dried silicon wafer into a chain type coating gettering source functional area through a conveying roller, coating a layer of phosphoric acid solution on the surface of the silicon wafer through a coating device, extruding through the conveying roller to enable the phosphoric acid solution on the surface of the silicon wafer to be uniformly coated and remove redundant phosphoric acid solution, and drying;
(c) performing chain type high-temperature gettering on the silicon wafer: the silicon wafer coated with the phosphoric acid solution on the surface enters a chain type high-temperature impurity-absorbing functional area through the transmission of a transmission roller, and at the moment, the silicon wafer is subjected to heat treatment for 2min at 500-800 ℃ through a chain type annealing furnace to complete the propulsion of phosphorus element, and N is formed on the surface of the silicon wafer+Doping layer, and simultaneously, impurity atoms in the silicon wafer body face to surface N+The doped layer is migrated and diffused and fixed on the surface N+In the doped layer, completing gettering, at this time, N on the surface of the silicon wafer+The doped layer is a gettering layer, N+An oxide layer, specifically a phosphorosilicate glass layer, is distributed on the doping layer; (ii) a
(d) Carrying out chain type post-cleaning on the silicon wafer: conveying the gettered silicon wafer into a chain type post-cleaning functional area through a conveying roller, cleaning the silicon wafer by adopting an HF solution with the mass percentage concentration of 5%, and removing an oxide layer on the surface of the silicon wafer;
through the steps, the quality difference between the silicon wafers is reduced to the minimum, and particularly the quality levels among the silicon wafers after the gettering layer is removed in the subsequent process tend to be consistent;
(2) alkali texturing is carried out on the silicon wafer after impurity absorption, and an impurity absorption layer on the surface of the silicon wafer is removed during texturing;
(3) depositing an intrinsic amorphous silicon layer on the front side and the back side of the textured silicon wafer;
(4) depositing a doped amorphous silicon layer on the front and back surfaces of the intrinsic amorphous silicon layer;
(5) depositing a transparent conductive film on the front and back surfaces of the silicon wafer;
(6) screen printing metal electrodes on the front and back surfaces of the silicon wafer;
(7) and sintering the silicon wafer at low temperature to obtain the high-efficiency heterojunction solar cell.
Example 3
A preparation method of a high-efficiency heterojunction solar cell specifically comprises the following steps:
(1) taking 1200N-type monocrystalline silicon wafers, and carrying out full-chain impurity absorption on the silicon wafers through full-chain impurity absorption equipment, wherein the method comprises the following steps:
(a) carrying out chain type pre-cleaning on the silicon wafer: the silicon wafer is conveyed into a chain type front cleaning functional area through a conveying roller, is cleaned by NaOH solution with the mass percentage concentration of 3%, is cleaned by HF solution with the mass percentage concentration of 10% after being washed, and is dried after being washed, so that organic matters, damaged layers, metal impurities and oxide layers on the surface of the silicon wafer are removed, and the cleanliness of the surface of the silicon wafer is improved;
(b) chain coating a gettering source on the surface of a silicon wafer: conveying the dried silicon wafer into a chain type coating impurity-absorbing source functional area through a conveying roller, coating a layer of boron-containing slurry on the surface of the silicon wafer through a coating device, extruding through the conveying roller to uniformly coat the boron-containing slurry on the surface of the silicon wafer and remove redundant boron-containing slurry, and drying;
(c) performing chain type high-temperature gettering on the silicon wafer: conveying the silicon wafer coated with the boron-containing slurry on the surface into a chain type high-temperature impurity-absorbing functional region through a conveying roller, carrying out heat treatment on the silicon wafer at 500-800 ℃ for 20min through a chain type annealing furnace to finish the propulsion of boron element, forming a P doping layer on the surface of the silicon wafer, simultaneously carrying out migration and diffusion on impurity atoms in the silicon wafer body towards the surface P doping layer, fixing the impurity atoms in the silicon wafer body in the surface P doping layer, finishing impurity absorption, wherein the P doping layer on the surface of the silicon wafer is an impurity-absorbing layer, and an oxidation layer, specifically a phosphorosilicate glass layer, is distributed on the P doping layer;
through the steps, the quality difference between the silicon wafers is reduced to the minimum, and particularly the quality levels among the silicon wafers after the gettering layer is removed in the subsequent process tend to be consistent;
(2) alkali texturing is carried out on the silicon wafer after impurity absorption, and an oxidation layer and an impurity absorption layer on the surface of the silicon wafer are removed during texturing;
(3) depositing an intrinsic amorphous silicon layer on the front side and the back side of the textured silicon wafer;
(4) depositing a doped amorphous silicon layer on the front and back surfaces of the intrinsic amorphous silicon layer;
(5) depositing a transparent conductive film on the front and back surfaces of the silicon wafer;
(6) screen printing metal electrodes on the front and back surfaces of the silicon wafer;
(7) and sintering the silicon wafer at low temperature to obtain the high-efficiency heterojunction solar cell.
Comparison group
A preparation method of a heterojunction solar cell specifically comprises the following steps:
(1) taking 1200N-type monocrystalline silicon pieces, and performing alkali texturing on the silicon pieces;
(2) depositing an intrinsic amorphous silicon layer on the front side and the back side of the textured silicon wafer;
(3) depositing a doped amorphous silicon layer on the front and back surfaces of the intrinsic amorphous silicon layer;
(4) depositing a transparent conductive film on the front and back surfaces of the silicon wafer;
(5) screen printing metal electrodes on the front and back surfaces of the silicon wafer;
(6) and sintering the silicon wafer at low temperature to obtain the heterojunction solar cell.
The heterojunction solar cells obtained in examples 1 to 3 and the comparative group were tested for electrical properties, and the average electrical property data are shown in table 1, where Eta is conversion efficiency, Uoc is open-circuit voltage, Jsc is short-circuit current, and FF is fill factor.
Table 1 electrical properties of the heterojunction solar cells of examples 1-3 and comparative groups
The boxplot of the conversion efficiencies of the cells prepared in examples 1-3 and the comparative example is shown in fig. 2.
As can be seen from table 1, in examples 1 to 3, a full-chain gettering process is added before the conventional heterojunction solar cell is fabricated, the efficiency of the fabricated heterojunction solar cell is improved by 0.12% to 0.27% compared to the comparative group, and the open-circuit voltage, the short-circuit current, and the fill factor are all significantly improved, which indicates that the gettering effect of the present invention is significant, and the heterojunction solar cell with high conversion efficiency is realized.
As can be seen from fig. 2, the heterojunction solar cells prepared in examples 1 to 3 have concentrated conversion efficiency distribution, significantly improved efficiency dispersion, good product consistency, easy production line efficiency control, and significantly better performance than the control group.
It is worth mentioning that in the invention, the first procedure in the preparation procedure of the conventional heterojunction solar cell is texturing, a full-chain type gettering procedure is added before the first procedure of the conventional heterojunction solar cell, the full-chain type gettering procedure and the texturing procedure can be well connected together, and the output and input of the silicon wafer can be completed through a conveying device, so that the degree of automation is high, the manual input is further reduced, and the industrial popularization and application are facilitated.
Claims (14)
1. A preparation method of a high-efficiency heterojunction solar cell is characterized by comprising the following steps: adding a gettering process before a conventional heterojunction solar cell preparation process, wherein the gettering process is completed through a full-chain type gettering process;
the full-chain type impurity absorbing process comprises the following steps:
performing chain type pre-cleaning on the silicon wafer;
coating a gettering source on the surface of a silicon wafer in a chain manner;
and performing chain type high-temperature gettering on the silicon wafer.
2. The method of claim 1, wherein: the silicon wafer is an N-type monocrystalline silicon wafer.
3. The method of claim 1, wherein: the gettering source is a liquid source.
4. The method of claim 2, wherein: the liquid source may be one of a phosphoric acid solution, a phosphorous-containing slurry or a boron-containing slurry.
5. The method of claim 1, wherein: the chain type pre-cleaning comprises alkali liquor cleaning.
6. The method of claim 5, wherein: the alkali liquor is NaOH solution with the mass percentage concentration of 1-3% or KOH solution with the mass percentage concentration of 1-3%.
7. The method of claim 5, wherein: and after the alkali liquor cleaning, the silicon wafer is subjected to acid liquor cleaning.
8. The method of claim 7, wherein: the acid solution is an HF solution with the mass percentage concentration of 1-10%.
9. The method of claim 1, wherein: the temperature of the chain type high-temperature gettering is 500-800 ℃, and the time is 2-20 min.
10. The method of claim 1, wherein: and after the silicon wafer is subjected to chain type high-temperature gettering, performing chain type post-cleaning on the silicon wafer.
11. The method of manufacturing according to claim 10, wherein: the chained post-cleaning is performed by using an HF solution with the mass percentage concentration of 1-5%.
12. A full-chain gettering equipment based on the full-chain gettering process of any one of claims 1 through 11, characterized in that: the full-chain type impurity absorption equipment comprises a chain type front cleaning function area, a chain type coating impurity absorption source function area, a chain type high-temperature impurity absorption function area and a conveying device penetrating through each function area, wherein the chain type front cleaning function area, the chain type coating impurity absorption source function area and the chain type high-temperature impurity absorption function area are sequentially connected, and a full-chain type impurity absorption process is completed when the silicon wafer is conveyed to the chain type front cleaning function area, the chain type coating impurity absorption source function area and the chain type high-temperature impurity absorption function area through the conveying device.
13. The full-chain gettering apparatus of claim 12, characterized in that: the full-chain type impurity absorbing equipment further comprises a chain type post-cleaning functional area positioned behind the chain type high-temperature impurity absorbing functional area.
14. A high efficiency heterojunction solar cell, wherein said high efficiency heterojunction solar cell is fabricated according to the fabrication method of any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2022/119006 WO2023116080A1 (en) | 2020-12-28 | 2022-09-15 | High-efficiency heterojunction solar cell and preparation method therefor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2020115730604 | 2020-12-28 | ||
| CN202011573060.4A CN112289894A (en) | 2020-12-28 | 2020-12-28 | High-efficiency heterojunction solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114551636A true CN114551636A (en) | 2022-05-27 |
| CN114551636B CN114551636B (en) | 2023-11-24 |
Family
ID=74426430
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011573060.4A Pending CN112289894A (en) | 2020-12-28 | 2020-12-28 | High-efficiency heterojunction solar cell and preparation method thereof |
| CN202111597429.XA Active CN114551636B (en) | 2020-12-28 | 2021-12-24 | Efficient heterojunction solar cell and preparation method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011573060.4A Pending CN112289894A (en) | 2020-12-28 | 2020-12-28 | High-efficiency heterojunction solar cell and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN112289894A (en) |
| WO (2) | WO2022142474A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114883454A (en) * | 2022-06-08 | 2022-08-09 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN115148848A (en) * | 2022-06-27 | 2022-10-04 | 常州时创能源股份有限公司 | Chain type phosphorus source for impurity absorption and preparation method and application thereof |
| CN116053113A (en) * | 2023-01-17 | 2023-05-02 | 江苏启威星装备科技有限公司 | Silicon wafer gettering method for preparing solar cell and method for preparing solar cell |
| WO2023116080A1 (en) * | 2020-12-28 | 2023-06-29 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method therefor |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257953A (en) * | 2021-04-18 | 2021-08-13 | 安徽华晟新能源科技有限公司 | Gettering method and phosphorus gettering device for N-type silicon wafer |
| CN113345981B (en) * | 2021-06-01 | 2022-12-06 | 常州时创能源股份有限公司 | Chain type equipment for preparing selective emitter |
| CN113363352B (en) * | 2021-06-01 | 2022-11-25 | 常州时创能源股份有限公司 | Preparation method of N-type battery selective emitter |
| CN113471311B (en) * | 2021-07-06 | 2023-05-23 | 安徽华晟新能源科技有限公司 | Heterojunction battery and preparation method thereof |
| CN113488562B (en) * | 2021-07-23 | 2022-12-06 | 常州时创能源股份有限公司 | Crystallization annealing treatment method for in-situ doped amorphous silicon |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120015474A1 (en) * | 2010-07-19 | 2012-01-19 | Yung-Chun Wu | Method for fabricating silicon heterojunction solar cells |
| CN102881767A (en) * | 2012-09-17 | 2013-01-16 | 天威新能源控股有限公司 | Chained diffusion process for solar cell |
| CN103117331A (en) * | 2013-01-31 | 2013-05-22 | 英利集团有限公司 | N-type heterojunction solar cell and manufacturing method thereof |
| CN104766908A (en) * | 2014-12-31 | 2015-07-08 | 苏州润阳光伏科技有限公司 | Chain type diffusion non-etching face phosphorus coating device |
| CN109616554A (en) * | 2018-12-13 | 2019-04-12 | 杭州海莱德智能科技有限公司 | A kind of chain type diffusion system |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080197454A1 (en) * | 2007-02-16 | 2008-08-21 | Calisolar, Inc. | Method and system for removing impurities from low-grade crystalline silicon wafers |
| CN102332500A (en) * | 2011-09-28 | 2012-01-25 | 桂林尚科光伏技术有限责任公司 | Gettering process for solar cell fabrication |
| CN102867738B (en) * | 2012-09-29 | 2016-04-13 | 常州大学 | A kind of crystal-silicon solar cell prepares the method for PN junction |
| CN104733564A (en) * | 2015-01-30 | 2015-06-24 | 英利集团有限公司 | Polycrystalline silicon solar cell and manufacturing method thereof |
| CN108447949B (en) * | 2018-05-18 | 2024-01-26 | 常州亿晶光电科技有限公司 | Chain type diffusion process and chain type diffusion equipment |
| CN112466990A (en) * | 2020-11-12 | 2021-03-09 | 晋能光伏技术有限责任公司 | Preparation process of high-efficiency heterojunction solar cell |
| CN112289895B (en) * | 2020-12-28 | 2021-07-27 | 常州时创能源股份有限公司 | N-type efficient solar cell and preparation method thereof |
| CN112289894A (en) * | 2020-12-28 | 2021-01-29 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method thereof |
-
2020
- 2020-12-28 CN CN202011573060.4A patent/CN112289894A/en active Pending
-
2021
- 2021-09-14 WO PCT/CN2021/118292 patent/WO2022142474A1/en active Application Filing
- 2021-12-24 CN CN202111597429.XA patent/CN114551636B/en active Active
-
2022
- 2022-09-15 WO PCT/CN2022/119006 patent/WO2023116080A1/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120015474A1 (en) * | 2010-07-19 | 2012-01-19 | Yung-Chun Wu | Method for fabricating silicon heterojunction solar cells |
| CN102881767A (en) * | 2012-09-17 | 2013-01-16 | 天威新能源控股有限公司 | Chained diffusion process for solar cell |
| CN103117331A (en) * | 2013-01-31 | 2013-05-22 | 英利集团有限公司 | N-type heterojunction solar cell and manufacturing method thereof |
| CN104766908A (en) * | 2014-12-31 | 2015-07-08 | 苏州润阳光伏科技有限公司 | Chain type diffusion non-etching face phosphorus coating device |
| CN109616554A (en) * | 2018-12-13 | 2019-04-12 | 杭州海莱德智能科技有限公司 | A kind of chain type diffusion system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023116080A1 (en) * | 2020-12-28 | 2023-06-29 | 常州时创能源股份有限公司 | High-efficiency heterojunction solar cell and preparation method therefor |
| CN114883454A (en) * | 2022-06-08 | 2022-08-09 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN114883454B (en) * | 2022-06-08 | 2024-04-30 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN115148848A (en) * | 2022-06-27 | 2022-10-04 | 常州时创能源股份有限公司 | Chain type phosphorus source for impurity absorption and preparation method and application thereof |
| CN116053113A (en) * | 2023-01-17 | 2023-05-02 | 江苏启威星装备科技有限公司 | Silicon wafer gettering method for preparing solar cell and method for preparing solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023116080A1 (en) | 2023-06-29 |
| WO2022142474A1 (en) | 2022-07-07 |
| CN114551636B (en) | 2023-11-24 |
| CN112289894A (en) | 2021-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114551636B (en) | Efficient heterojunction solar cell and preparation method thereof | |
| CN112289895B (en) | N-type efficient solar cell and preparation method thereof | |
| CN100573928C (en) | A kind of phosphorus diffusion method of making solar cell | |
| CN112542531B (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN111710748B (en) | Method for manufacturing SHJ solar cell by using heat-treated N-type monocrystalline silicon wafer | |
| EP2782146A1 (en) | Solar cell with reduced potential induced degradation and manufacturing method thereof | |
| CN112466990A (en) | Preparation process of high-efficiency heterojunction solar cell | |
| CN115483310A (en) | Preparation method of solar cell, emitter junction and solar cell | |
| CN114284395A (en) | Preparation method of silicon-based heterojunction solar cell with first texturing and then gettering | |
| CN114823969A (en) | Low-temperature hydrogen plasma auxiliary annealing method for improving performance of passivation contact structure and TOPCon solar cell | |
| CN112071953A (en) | Method and device for preparing passivated contact solar cell by plate-type equipment | |
| CN113921649A (en) | Preparation method of silicon-based heterojunction solar cell | |
| CN104009114B (en) | The manufacture method of quasi-monocrystalline silicon solar battery sheet | |
| CN114628547B (en) | Solar cell with back surface local morphology and preparation method thereof | |
| CN113571602B (en) | Secondary diffusion selective emitter and preparation method and application thereof | |
| CN113571411B (en) | Manufacturing method of N-type TOPCON solar cell | |
| US9842956B2 (en) | System and method for mass-production of high-efficiency photovoltaic structures | |
| CN114188444A (en) | Cleaning method and application of TCO film of heterojunction cell, cell piece and preparation method of heterojunction cell | |
| CN109728109B (en) | Crystalline silicon double-sided battery and heat treatment method thereof | |
| CN113161447A (en) | Phosphorus-hydrogen annealing pretreatment method for casting monocrystalline or polycrystalline silicon wafers | |
| CN114695593A (en) | Preparation method of back contact battery and back contact battery | |
| CN112436063B (en) | Preparation method of cast monocrystalline silicon heterojunction solar cell | |
| CN112259638B (en) | Preparation method of photovoltaic cell | |
| CN114093963A (en) | Silicon-based heterojunction solar cell structure and preparation method thereof | |
| CN116632119A (en) | Heterojunction battery piece preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |