CN104766836B - A kind of semiconductor package of elastic anti-seismic - Google Patents
A kind of semiconductor package of elastic anti-seismic Download PDFInfo
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- CN104766836B CN104766836B CN201510177429.2A CN201510177429A CN104766836B CN 104766836 B CN104766836 B CN 104766836B CN 201510177429 A CN201510177429 A CN 201510177429A CN 104766836 B CN104766836 B CN 104766836B
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- layer
- large area
- semiconductor devices
- elastic sheet
- area contact
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Abstract
The invention discloses a kind of semiconductor package of elastic anti-seismic, including functional device and encapsulated layer, the encapsulated layer wraps up covering function device, the functional device includes large area contact, semiconductor devices, Minimal Tension electroconductive elastic sheet and elastic gel, the elastic gel parcel covering large area contact, semiconductor devices and Minimal Tension electroconductive elastic sheet, the large area contact is electrically connected to semiconductor devices, the semiconductor devices is electrically connected to Minimal Tension electroconductive elastic sheet, the large area contact and Minimal Tension electroconductive elastic sheet are electrically connected to the pin outlet on encapsulated layer, technical scheme, which is realized, bears high vibrations stress, it is less prone to the phenomenon of cracking and avoids influencing each other between component.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly to a kind of semiconductor package of elastic anti-seismic.
Technical background
In terms of semiconductor packaging, existing technology is generally packaged using the epoxy resin of hard, asphalt mixtures modified by epoxy resin
The impact resistance of fat is poor, and external impact can be directly passed to packed semiconductor devices, especially work as semiconductor product
Applied to height vibrations occasion, be more the increase in the damage probability of semiconductor chip, in order to solve these problems, now with factory
Business adds soft formation to mitigate vibrations using chip circumference, but is due to the rigid connection presence of electrical connection, to the firm of electrical connection
Property brings new problem, while being also difficult to the vibration influence for veritably mitigating chip；Other existing simple encapsulated layer exists
Epoxy resin layer cracking is easily caused in the case of height vibrations, the service life of product is also leveraged.The present invention is exactly pin
To these problems, there is provided a kind of semiconductor package of elastic anti-seismic.
The content of the invention
Instant invention overcomes deficiency of the prior art, there is provided a kind of semiconductor package of elastic anti-seismic.
In order to solve the above-mentioned technical problem, the present invention is achieved by the following technical solutions：The half of a kind of elastic anti-seismic
Conductor package structure, including functional device and encapsulated layer, the encapsulated layer wrap up covering function device, and the functional device includes
Large area contact, semiconductor devices, Minimal Tension electroconductive elastic sheet and elastic gel, the elastic gel parcel covering large area are touched
Piece, semiconductor devices and Minimal Tension electroconductive elastic sheet, the large area contact are electrically connected to semiconductor devices, the semiconductor devices
Minimal Tension electroconductive elastic sheet is electrically connected to, the large area contact and Minimal Tension electroconductive elastic sheet are electrically connected to the pin on encapsulated layer
Outlet.
Preferably, the Minimal Tension electroconductive elastic sheet is U-shaped electroconductive elastic sheet.
Preferably, the encapsulated layer includes the first epoxy resin layer, carbon fiber layer, electro-magnetic screen layer and the second asphalt mixtures modified by epoxy resin
Lipid layer, the second epoxy resin layer parcel covering electro-magnetic screen layer, the electro-magnetic screen layer parcel covering carbon fiber layer is described
Carbon fiber layer parcel the first epoxy resin layer of covering.
Preferably, the electro-magnetic screen layer is Nano Silver bisque.
Compared with prior art, it is an advantage of the invention that：Due to the presence of Minimal Tension electroconductive elastic sheet and elastic gel, use
Soft connection between semiconductor chip and encapsulated layer, chip is not directly placed on by the stress suffered by encapsulated layer, so as to realize
The present invention can bear the function of high vibrations stress；The present invention can be difficult out due to introducing carbon fiber layer in encapsulated layer
The phenomenon now ftractureed；Due to having electro-magnetic screen layer in encapsulated layer, product can be made to avoid first device under complicated operating mode
The mutual electromagnetic influence of part.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of semiconductor package of elastic anti-seismic, including functional device and encapsulated layer, the encapsulation
Layer includes the first epoxy resin layer 4, carbon fiber layer 3, the epoxy resin layer 1 of Nano Silver bisque 2 and second, second epoxy resin
The parcel covering Nano Silver of layer 1 bisque 2, the parcel of the Nano Silver bisque 2 covering carbon fiber layer 3, the parcel of carbon fiber layer 3 covering
First epoxy resin layer 4, first epoxy resin layer 4 wraps up covering function device, and the functional device is touched including large area
Piece 5, semiconductor devices 10, U-shaped electroconductive elastic sheet 8 and elastic gel 9, the parcel of the elastic gel 9 covering large area contact 5, half
Conductor device 10 and U-shaped electroconductive elastic sheet 8, the large area contact 5 are electrically connected to semiconductor devices 10, the semiconductor devices 10
U-shaped electroconductive elastic sheet 8 is electrically connected to, the large area contact 5 is electrically connected to the first pin outlet 6 on encapsulated layer, and the U-shaped is led
Electric shell fragment is electrically connected to the second pin outlet 7 on encapsulated layer.
, can be in large area contact 5, semiconductor device because U-shaped electroconductive elastic sheet 8 is Minimal Tension shell fragment during present invention work
Certain pressure is formed between part 10 and U-shaped electroconductive elastic sheet, has ensured that large area contact 5 can be in the case of height vibrations effectively
Semiconductor devices 10 is contacted, effective conductive contact is formed, because being that contact connects between large area contact 5 and semiconductor devices 10
Connect, and U-shaped electroconductive elastic sheet 8 have certain elasticity, semiconductor devices 10 alleviate from be conductively connected aspect hard stress, again
Elastic gel 9 can fully alleviate the stress to the surface of semiconductor devices 10 from encapsulated layer, so as to realize semiconductor devices 10
In the case of height vibrations, fault rate is reduced, extends the purpose of product service life.Carbon fiber layer 3 is served in the present invention
Strengthen the effect of encapsulated layer, can be with the structural rigidity of efficient hardening product encapsulated layer, Nano Silver bisque 2 can make the present invention multiple
The mutual electromagnetic between component can be avoided to influence under miscellaneous operating mode.
In addition to the above embodiments, other not described embodiments also should be within protection scope of the present invention.Herein
Described specific embodiment is only that to spirit explanation for example of the invention, those skilled in the art can be with
Various modifications or supplement are made to described specific embodiment or is substituted using similar mode, but without departing from this
The spirit of invention surmounts scope defined in appended claims.Although being illustrated herein through specific term,
The possibility using other terms is not excluded for, is used for the purpose of easily describing and explaining the sheet of the present invention using these terms
Matter, is construed as any additional limitation and is all disagreed with spirit of the present invention.
Claims (4)
1. a kind of semiconductor package of elastic anti-seismic, it is characterised in that including functional device and encapsulated layer, the encapsulated layer
Covering function device is wrapped up, the functional device includes large area contact, semiconductor devices, Minimal Tension electroconductive elastic sheet and elastic gum
Body, the elastic gel parcel covering large area contact, semiconductor devices and Minimal Tension electroconductive elastic sheet, the large area contact electricity
Semiconductor devices is connected to, the semiconductor devices is electrically connected to Minimal Tension electroconductive elastic sheet, the large area contact and Minimal Tension
Electroconductive elastic sheet is electrically connected to the pin outlet on encapsulated layer.
2. the semiconductor package of a kind of elastic anti-seismic according to claim 1, it is characterised in that the Minimal Tension is led
Electric shell fragment is U-shaped electroconductive elastic sheet.
3. a kind of semiconductor package of elastic anti-seismic according to claim 1 or 2, it is characterised in that the encapsulation
Layer includes the first epoxy resin layer, carbon fiber layer, electro-magnetic screen layer and the second epoxy resin layer, the second epoxy resin layer bag
Wrap lid electro-magnetic screen layer, the electro-magnetic screen layer parcel covering carbon fiber layer, carbon fiber layer parcel first epoxy of covering
Resin bed.
4. a kind of semiconductor package of elastic anti-seismic according to claim 3, it is characterised in that the electromagnetic shielding
Layer is Nano Silver bisque.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510177429.2A CN104766836B (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of elastic anti-seismic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510177429.2A CN104766836B (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of elastic anti-seismic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104766836A CN104766836A (en) | 2015-07-08 |
| CN104766836B true CN104766836B (en) | 2017-10-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510177429.2A Active CN104766836B (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of elastic anti-seismic |
Country Status (1)
| Country | Link |
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| CN (1) | CN104766836B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203456436U (en) * | 2013-08-22 | 2014-02-26 | 江西创成半导体有限公司 | Wearing type semiconductor packaging structure |
| CN204516744U (en) * | 2015-04-15 | 2015-07-29 | 江苏晟芯微电子有限公司 | A kind of semiconductor package of elastic anti-seismic |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273317A (en) * | 2002-03-19 | 2003-09-26 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
| JP3580803B2 (en) * | 2002-08-09 | 2004-10-27 | 沖電気工業株式会社 | Semiconductor device |
-
2015
- 2015-04-15 CN CN201510177429.2A patent/CN104766836B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203456436U (en) * | 2013-08-22 | 2014-02-26 | 江西创成半导体有限公司 | Wearing type semiconductor packaging structure |
| CN204516744U (en) * | 2015-04-15 | 2015-07-29 | 江苏晟芯微电子有限公司 | A kind of semiconductor package of elastic anti-seismic |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104766836A (en) | 2015-07-08 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20160601 Address after: 215300 Jiangsu province north of the city of Yushan town of Kunshan city Hanpu Road No. 998, room 3 Applicant after: Suzhou Juda senchip Microelectronics Co. Ltd. Address before: 225500 hi tech innovation center, Jiangyan District, Taizhou, Jiangsu Applicant before: Jiangsu Senchip Microelectronics Co., Ltd. |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20180919 Address after: 215316 Han Po Road, hi tech Industrial Park, Kunshan Development Zone, Jiangsu (998) Patentee after: Kunshan Juda Electronic Co., Ltd. Address before: 215300 room 3, Han Po Road, Yushan Town, Yushan Town, Kunshan, Jiangsu Patentee before: Suzhou Juda senchip Microelectronics Co. Ltd. |
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| TR01 | Transfer of patent right |