CN104752574A - LED light emitting material - Google Patents
LED light emitting material Download PDFInfo
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- CN104752574A CN104752574A CN201510190453.XA CN201510190453A CN104752574A CN 104752574 A CN104752574 A CN 104752574A CN 201510190453 A CN201510190453 A CN 201510190453A CN 104752574 A CN104752574 A CN 104752574A
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- zno
- luminescent material
- hole injection
- injection layer
- led luminescent
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- 239000000463 material Substances 0.000 title claims abstract description 88
- 238000002347 injection Methods 0.000 claims abstract description 53
- 239000007924 injection Substances 0.000 claims abstract description 53
- 229910003460 diamond Inorganic materials 0.000 claims description 23
- 239000010432 diamond Substances 0.000 claims description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 26
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 230000008020 evaporation Effects 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- 238000002207 thermal evaporation Methods 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED light emitting material, belongs to the technical field of semiconductor photoelectron materials and devices and solves the technical problem that LED light emitting materials are low in light emitting efficiency in the prior art. The LED light emitting material comprises a P(I)N junction and a hole injection layer, the hole injection layer closely contacts with a p-type layer of the P(I)N junction, carrier concentration of the hole injection layer is larger than hole concentration in the p-type layer, and thickness of the hole injection layer is 50nm-3micron. The LED light emitting material is of a homogeneous structure, so that interface defect caused by heterostructure is avoided; hole concentration of the p-type layer is increased by adopting the hole injection layer, so that the LED light emitting material has high light emitting efficiency.
Description
Technical field
The invention belongs to Semiconductor Optoeletronic Materials and device arts, be specifically related to a kind of LED luminescent material.
Background technology
Light-emitting diode, be called for short LED, possess that operating voltage is low, operating current is little, shock resistance and anti-seismic performance good, reliability is high, and the life-span is long, can the advantage such as modulated luminescence power easily by modulated current power.But some semiconductive luminescent materials, as ZnO, GaN, AlGaN, MgZnO, SiC, diamond etc., luminous efficiency is very low, does not even observe, so before application, needs the luminous efficiency strengthening these materials.LED is the recombination radiation by the electronics in its structure and hole, realizes luminous, so the luminous intensity of LED depends on the electronics of luminescent layer and the number in hole usually.Some semi-conducting material, such as zno-based LED, electronics realizes higher concentration than being easier to usually, but due to the p-type doping of wide bandgap semiconductor generally more difficult, the existing higher concentration hole of historical facts or anecdotes is then very difficult.And the interface existing defects of heterojunction, cause P (I) N heterojunction luminescent properties not only not improve, degradation on the contrary.Therefore find that a kind of luminescent material of the problem not only having had higher luminous efficiency but also boundary defect can be avoided to produce just seems extremely important.
Summary of the invention
The object of the invention is to solve the technical problem that in prior art, LED luminescent material luminous efficiency is low, a kind of LED luminescent material is provided.
The technical scheme that the present invention solves the problems of the technologies described above employing is as follows.
LED luminescent material, comprise P (I) N to tie, also comprise hole injection layer, the p-type layer close contact that described hole injection layer and P (I) N tie, and the carrier concentration of hole injection layer is greater than the hole concentration in p-type layer, the thickness of hole injection layer is at 50nm-3 μm.
Further, the top of valence band position of described hole injection layer is not higher than the top of valence band position 1.5eV of p-type layer.
Further, described P (I) N becomes ZnO homogeneity P (I) N knot, GaN homogeneity P (I) N ties, AlGaN homogeneity P (I) N ties, MgZnO homogeneity P (I) N ties, SiC homogeneity P (I) N ties or diamond homogeneity P (I) N ties; Further, described ZnO homogeneity P (I) N becomes the one in p-ZnO/ intrinsic ZnO/n-ZnO, p-ZnO/ZnO based multiple quantum well/n-ZnO, p-ZnO/n-ZnO.
Further, the material of described hole injection layer is one or more the alloy in p-GaN, p-diamond, p-SiC, p-GaAs, p-Si.
Further, the carrier concentration of described hole injection layer is 1 × 10
18cm
-3above, the hole concentration of p-type layer is 1 × 10
17cm
-3above.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention strengthens LED luminescent material, when not changing existing P (I) N and tying, increase hole injection layer, under applying bias, some holes in hole injection layer can be crossed the potential barrier being arranged in hole injection layer and p-type layer interface and are injected into p-type layer, improve the hole concentration in p-type layer, therefore have more electronics and hole recombination luminescence in P (I) N ties, make LED material possess higher luminous efficiency; And this material adopts homostyructure, avoids the boundary defect that heterojunction brings, further increases luminous efficiency.
Accompanying drawing explanation
In Fig. 1, (a) is the structural representation of the LED luminescent material of PN of the present invention, and (b) is the structural representation of the LED luminescent material of PIN structural of the present invention;
Fig. 2 be LED luminescent material of the present invention can be with schematic diagram;
In figure, 1, hole injection layer, 2, p-type layer, 3, i type layer, 4, n-layer.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
As shown in Figure 2, P (I) N that prior art does not have hole injection layer to cover ties, and because n-layer electron concentration and mobility will much larger than the hole concentration of p-type layer and mobilities, the radiation recombination in electronics and hole mainly occurs in p-type layer, hole concentration is too low, restriction luminous power; The hole injection layer side hole concentration that P (I) N that the present invention adds hole injection layer ties is higher than p-type layer, under applying bias, some holes of hole injection layer can be crossed the potential barrier being arranged in hole injection layer and p-type layer interface and are injected into p-type layer, improve the hole concentration in p-type layer, therefore, more electronics and hole recombination luminescence in p-type layer is had.
As shown in Figure 1, luminescent material of the present invention is different according to the structure difference of LED, if LED is PN junction, LED luminescent material of the present invention, comprise PN junction and hole injection layer 1, p-type layer 2 close contact of hole injection layer 1 and PN junction, as shown in Fig. 1 (a); If LED is PIN junction, LED luminescent material of the present invention, comprise PIN junction and hole injection layer 1, p-type layer 2 close contact of hole injection layer 1 and PIN junction, as shown in Fig. 1 (b).Hole injection layer 1, p-type layer 2, (i type layer 3) and n-layer 4 can be arranged in order from top to bottom, also can be arranged in order from bottom to up, be not particularly limited.This LED luminescent material can be arranged in substrate, hole injection layer 1 or n-layer 4 and substrate close contact.
In above-mentioned two kinds of structures, the thickness of hole injection layer 1 is all at 50nm-3 μm, and the carrier concentration of hole injection layer 1 is greater than the hole concentration in p-type layer 2, and the carrier concentration of preferred hole injection layer 1 is 1 × 10
18cm
-3above, the hole concentration of p-type layer 2 is 1 × 10
17cm
-3above, the top of valence band position of hole injection layer 1 is not higher than the top of valence band position 1.5eV of p-type layer 2, preferably not higher than 0.5eV, namely the top of valence band position of hole injection layer 1 is lower than the top of valence band position of p-type layer 2, or the top of valence band position of hole injection layer 1 is than the top of valence band position height 0-1.5eV of p-type layer 2.The material of hole injection layer 1 is one or more in p-GaN, p-diamond, p-SiC, p-GaAs, p-Si alloy materials of forming in any proportion.Wherein, PN junction and PIN junction are all homostyructure, and as ZnO homogeneity P (I) N knot, GaN homogeneity P (I) N ties, AlGaN homogeneity P (I) N ties, MgZnO homogeneity P (I) N ties, SiC homogeneity P (I) N knot, diamond homogeneity P (I) N knot etc.; ZnO homogeneity P (I) N knot is made up of p-ZnO and subsequent structural thereof, can be p-ZnO/ intrinsic ZnO/n-ZnO, p-ZnO/ZnO based multiple quantum well/n-ZnO, p-ZnO/n-ZnO etc.
The invention provides the preparation method of two kinds of above-mentioned LED luminescent material, but be not limited thereto;
One, first prepare P (I) N to tie, then in the p-type layer 2 of P (I) N knot, prepare the hole injection layer 1 that thickness is 50nm-3 μm;
Two, the hole injection layer 1 that thickness is 50nm-3 μm is first prepared, then on hole injection layer 1, prepare the p-type layer 2 that P (I) N ties, then in p-type layer 2, prepare n-layer 4 (for PN) or prepare i type layer 3 and n-layer 4 (for PIN structural) successively.
In said method, the concrete preparation method of hole injection layer 1, p-type layer 2, i type layer 3 and n-layer 4 can adopt existing physics and chemistry method, is not particularly limited, such as molecular beam epitaxial method.When preparing hole injection layer 1 in the ban, hole injection layer 1 can be prepared in substrate, departs from substrate after also can preparing, and hole injection layer 1 can be thin-film material, also can be body material.
The thickness of the p-type layer 2 in the present invention, i type layer 3 and n-layer 4 is not particularly limited, and selects according to existing.If p-type layer 2 to be 150nm, i type layer 3 be 300nm and n-layer 4 are 400nm.
After prepared by LED luminescent material of the present invention, vacuum thermal evaporation technique evaporation metal nickel gold film (Ni/Au) on hole injection layer 1 can be adopted, evaporation metal indium (In) in n-layer 4, as contact electrode, realizes LED luminescent material device.
Comparative example 1
LED luminescent material, is followed successively by from bottom to up: the n-ZnO that p-ZnO, 400nm that 150nm is thick are thick.
Adopt vacuum thermal evaporation technique respectively on hole injection layer p-ZnO and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device, when Injection Current is 60mA, the power output recording this device LED is 20nw.
Embodiment 1
LED luminescent material, is followed successively by from bottom to up: the n-ZnO that p-ZnO, 400nm that p-GaN, 150nm that 600nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 600nm, hole concentration is 10
17cm
-3p-GaN;
Step 3, on p-GaN, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 4, on p-ZnO, grow the n-ZnO that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-GaN and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device, by LED luminescent material device, when Injection Current is 60mA, the power output recording this device LED is 20 μ w.
Embodiment 2
LED luminescent material, is followed successively by from bottom to up: the p-GaN that p-ZnO, 600nm that n-ZnO, 150nm that 400nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness are the n-ZnO of 400nm;
Step 2, on n-ZnO, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 3, on p-ZnO, grow one deck thickness 600nm, hole concentration is 10
17cm
-3p-GaN, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-GaN and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device, when Injection Current is 60mA, the power output recording this device LED is 2 μ w.As can be seen from comparative example 1 and embodiment 1-2, LED luminescent material of the present invention is compared to the LED luminescent material of prior art, and power output improves three orders of magnitude.
Embodiment 3
LED luminescent material, is followed successively by from bottom to up: the n-ZnO that p-ZnO, 400nm that p-diamond, 150nm that 600nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 600nm, hole concentration is 10
18cm
-3p-diamond;
Step 2, on p-diamond, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 3, on p-ZnO, grow the n-ZnO that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-diamond and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 4
LED luminescent material, is followed successively by from bottom to up: the p-diamond that p-ZnO, 600nm that n-ZnO, 150nm that 400nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness are the n-ZnO of 400nm;
Step 2, on n-ZnO, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 3, on p-ZnO, grow one deck thickness 600nm, hole concentration is 10
17cm
-3p-diamond, obtain above-mentioned LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-diamond and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 5
LED luminescent material, is followed successively by from bottom to up: the n-ZnO that the intrinsic ZnO that p-ZnO, 200nm that p-SiC, 150nm that 50nm is thick are thick are thick, 400nm are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 50nm, hole concentration is 10
18cm
-3p-SiC;
Step 2, on p-SiC, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 3, on p-ZnO, grow the intrinsic ZnO that one deck thickness is 200nm;
Step 4, on intrinsic ZnO, grow the n-ZnO that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-SiC and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 6
LED luminescent material, is followed successively by from bottom to up: the zno-based Multiple Quantum Well that n-ZnO, 800nm that 400nm is thick are thick, the p-GaAs that p-ZnO, 500nm that 150nm is thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness are the n-ZnO of 400nm;
Step 2, on n-ZnO, grow the zno-based Multiple Quantum Well that one deck thickness is 800nm;
Step 3, in zno-based Multiple Quantum Well, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-ZnO;
Step 4, on p-ZnO, grow one deck thickness be 500nm, and hole concentration is 10
18cm
-3p-GaAs;
Adopt vacuum thermal evaporation technique respectively on p-GaAs and n-ZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 7
LED luminescent material, is followed successively by from bottom to up: the n-GaN that p-GaN, 400nm that p-SiC, 150nm that 600nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 600nm, hole concentration is 10
18cm
-3p-SiC;
Step 2, on p-SiC, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-GaN;
Step 3, on p-GaN, grow the n-GaN that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-SiC and n-GaN evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 8
LED luminescent material, is followed successively by from bottom to up: the n-AlGaN that p-AlGaN, 400nm that p-GaAs, 150nm that 700nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 700nm, hole concentration is 10
18cm
- 3p-GaAs;
Step 2, on p-GaAs, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-AlGaN;
Step 3, on p-AlGaN, grow the n-AlGaN that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-GaAs and n-AlGaN evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 9
LED luminescent material, is followed successively by from bottom to up: the p-diamond that 3 μm of thick p-Si, 150nm are thick, the n-diamond that 400nm is thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 3 μm, hole concentration is 10
18cm
-3p-Si;
Step 2, on p-Si, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-diamond;
Step 3, on p-diamond, grow the n-diamond that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-Si and n-diamond evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 10
LED luminescent material, is followed successively by from bottom to up: the p-diamond that p-MgZnO, 600nm that n-MgZnO, 150nm that 400nm is thick are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness are the n-MgZnO of 400nm;
Step 2, on n-MgZnO, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-MgZnO;
Step 3, on p-MgZnO, grow one deck thickness 600nm, hole concentration is 10
17cm
-3p-diamond, obtain above-mentioned LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on p-diamond and n-MgZnO evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Embodiment 11
LED luminescent material, is followed successively by from bottom to up: the n-SiC that p-SiC, 400nm that the alloy of p-SiC and p-Si that 600nm is thick, 150nm are thick are thick.
The preparation method of above-mentioned LED luminescent material:
Step one, on a sapphire substrate growth one deck thickness 600nm, hole concentration is 10
18cm
-3the alloy of p-SiC and p-Si;
Step 2, on the alloy of p-SiC and p-Si, grow one deck thickness be 150nm, and hole concentration is 10
16cm
-3p-SiC;
Step 3, on p-SiC, grow the n-SiC that one deck thickness is 400nm, obtain LED luminescent material.
Adopt vacuum thermal evaporation technique respectively on the alloy, n-SiC of p-SiC and p-Si evaporation metal nickel gold film (Ni/Au) and indium metal (In) as contact electrode, by LED luminescent material device.
Claims (6)
1.LED luminescent material, comprises P (I) N and ties, it is characterized in that, also comprise hole injection layer (1);
P-type layer (2) close contact that described hole injection layer (1) and P (I) N tie, and the carrier concentration of hole injection layer (1) is greater than the hole concentration in p-type layer (2), the thickness of hole injection layer (1) is 50nm-3 μm.
2. LED luminescent material according to claim 1, is characterized in that, the top of valence band position of described hole injection layer (1) is not higher than the top of valence band position 1.5eV of p-type layer (2).
3. LED luminescent material according to claim 1, it is characterized in that, described P (I) N becomes ZnO homogeneity P (I) N knot, GaN homogeneity P (I) N ties, AlGaN homogeneity P (I) N ties, MgZnO homogeneity P (I) N ties, SiC homogeneity P (I) N ties or diamond homogeneity P (I) N ties.
4. LED luminescent material according to claim 3, is characterized in that, described ZnO homogeneity P (I) N becomes the one in p-ZnO/ intrinsic ZnO/n-ZnO, p-ZnO/ZnO based multiple quantum well/n-ZnO, p-ZnO/n-ZnO.
5. LED luminescent material according to claim 1, is characterized in that, the material of described hole injection layer (1) is one or more the alloy in p-GaN, p-diamond, p-SiC, p-GaAs, p-Si.
6. LED luminescent material according to claim 1, is characterized in that, the carrier concentration of described hole injection layer (1) is 1 × 10
18cm
-3above, the hole concentration of p-type layer (2) is 1 × 10
17cm
-3above.
Priority Applications (1)
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|---|---|---|---|
| CN201510190453.XA CN104752574A (en) | 2015-04-21 | 2015-04-21 | LED light emitting material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190453.XA CN104752574A (en) | 2015-04-21 | 2015-04-21 | LED light emitting material |
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|---|---|
| CN104752574A true CN104752574A (en) | 2015-07-01 |
Family
ID=53591959
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| CN107204810A (en) * | 2017-05-17 | 2017-09-26 | 西安科锐盛创新科技有限公司 | A kind of optical fiber telecommunications system |
| CN108321271A (en) * | 2018-03-06 | 2018-07-24 | 西安交通大学 | A kind of quasi- vertical structure p- diamonds/i-SiC/n- diamonds LED and preparation method thereof |
| CN108321262A (en) * | 2018-03-06 | 2018-07-24 | 西安交通大学 | A kind of vertical structure p- diamonds/i-SiC/n- diamonds LED and preparation method thereof |
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| US8174009B2 (en) * | 2008-10-24 | 2012-05-08 | Panasonic Corporation | Organic electroluminescence element and manufacturing method thereof |
| CN102623596A (en) * | 2012-04-25 | 2012-08-01 | 华灿光电股份有限公司 | Gallium nitride semiconductor light-emitting diode with tilt quantum well structure |
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2015
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| CN101960603A (en) * | 2008-01-08 | 2011-01-26 | 莫克斯特尼克公司 | High-performance heterostructure light emitting devices and methods |
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| CN107204810A (en) * | 2017-05-17 | 2017-09-26 | 西安科锐盛创新科技有限公司 | A kind of optical fiber telecommunications system |
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| CN108321262A (en) * | 2018-03-06 | 2018-07-24 | 西安交通大学 | A kind of vertical structure p- diamonds/i-SiC/n- diamonds LED and preparation method thereof |
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