CN104752532B - 一种半导体器件的三维电极结构及其制备方法和应用 - Google Patents
一种半导体器件的三维电极结构及其制备方法和应用 Download PDFInfo
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- CN104752532B CN104752532B CN201510023906.XA CN201510023906A CN104752532B CN 104752532 B CN104752532 B CN 104752532B CN 201510023906 A CN201510023906 A CN 201510023906A CN 104752532 B CN104752532 B CN 104752532B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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CN201510023906.XA CN104752532B (zh) | 2015-01-17 | 2015-01-17 | 一种半导体器件的三维电极结构及其制备方法和应用 |
PCT/CN2015/098138 WO2016112773A1 (zh) | 2015-01-17 | 2015-12-21 | 一种半导体器件的三维电极结构及其制备方法和应用 |
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Families Citing this family (17)
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CN104752532B (zh) * | 2015-01-17 | 2017-01-25 | 王宏兴 | 一种半导体器件的三维电极结构及其制备方法和应用 |
US9989495B2 (en) * | 2015-11-19 | 2018-06-05 | General Electric Company | Acoustic monitoring method for additive manufacturing processes |
CN106404919A (zh) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | 声表面波传感器 |
CN106711241B (zh) * | 2016-12-21 | 2018-04-17 | 西安交通大学 | 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 |
CN107144744B (zh) * | 2017-04-25 | 2018-07-20 | 云南大学 | 一种测量纳米尺度材料/结构中的电子输运性能的电极系统 |
CN107845693B (zh) * | 2017-10-12 | 2019-07-16 | 中国电子科技集团公司第十一研究所 | 一种红外探测器芯片电极的制造方法 |
FR3078169B1 (fr) * | 2018-02-16 | 2020-03-13 | Thales | Dispositif et procede d'analyse en frequence d'un signal |
CN108321218A (zh) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | 一种三维平行板电极半导体探测器 |
CN108493268B (zh) * | 2018-04-28 | 2019-10-01 | 西安交通大学 | 一种金刚石紫外探测器三维电极结构及其制作方法 |
CN109560161B (zh) * | 2018-12-06 | 2020-04-28 | 湖北大学 | 基于m面ZnOS薄膜的自发极化增强型光电探测器及其制备方法 |
CN109560162B (zh) * | 2018-12-06 | 2020-04-28 | 湖北大学 | 一种基于非极性a面ZnOS薄膜的光电探测器及其制备方法 |
CN111725336B (zh) * | 2019-03-21 | 2022-02-01 | 中国科学院宁波材料技术与工程研究所 | 探测介质及其制备方法、金刚石探测器 |
CN109994454B (zh) * | 2019-04-01 | 2023-10-24 | 李正 | 六边形盒状三维探测器及其制备方法 |
CN110010591B (zh) * | 2019-04-01 | 2024-05-07 | 湘潭大学 | 三维双面硅微条探测器及其制备方法 |
CN111863979B (zh) * | 2020-07-21 | 2022-07-15 | 中国科学技术大学 | 一种氧化镓光电探测器及其制备方法 |
CN112909155A (zh) * | 2021-01-20 | 2021-06-04 | 中国科学院工程热物理研究所 | 一种直接测量微纳材料热电优值的探测器及制备工艺 |
CN114063140B (zh) * | 2021-11-16 | 2023-12-05 | 郑州工程技术学院 | 一种消除极化效应的金刚石中子探测器的制备方法 |
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JPH06151946A (ja) * | 1992-11-12 | 1994-05-31 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子およびその製造方法 |
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
GB0622695D0 (en) * | 2006-11-14 | 2006-12-27 | Element Six Ltd | Robust radiation detector comprising diamond |
TWM387372U (en) * | 2010-03-29 | 2010-08-21 | Neo Solar Power Corp | Electrode structure of solar cell |
CN102694052B (zh) * | 2011-03-22 | 2016-01-06 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN104167458A (zh) * | 2014-03-31 | 2014-11-26 | 清华大学 | 紫外探测器及其制备方法 |
CN104752532B (zh) * | 2015-01-17 | 2017-01-25 | 王宏兴 | 一种半导体器件的三维电极结构及其制备方法和应用 |
CN204424268U (zh) * | 2015-01-17 | 2015-06-24 | 王宏兴 | 一种半导体器件的三维电极结构 |
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- 2015-01-17 CN CN201510023906.XA patent/CN104752532B/zh active Active
- 2015-12-21 WO PCT/CN2015/098138 patent/WO2016112773A1/zh active Application Filing
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CN104752532A (zh) | 2015-07-01 |
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