CN104749894A - A mask bench capable of improving vertical gravity bending of a mask - Google Patents
A mask bench capable of improving vertical gravity bending of a mask Download PDFInfo
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- CN104749894A CN104749894A CN201310737701.9A CN201310737701A CN104749894A CN 104749894 A CN104749894 A CN 104749894A CN 201310737701 A CN201310737701 A CN 201310737701A CN 104749894 A CN104749894 A CN 104749894A
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- mask
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Abstract
A mask bench capable of improving vertical gravity bending of a mask is provided. The mask bench is characterized in that: the mask bench comprises systems applying symmetric outward tension forces depart from the mask direction to the mask. Based on original mask benches, the systems which can apply symmetric outward tension forces to two side edges or the periphery edge of the mask, such as vacuum adsorption systems, are additionally arranged, so that symmetric outward tension forces are generated onto the mask from the direction of quartz surface edges of the mask. The outward tension forces can improve downward bending deformation caused by gravity of the mask.
Description
Technical field
The present invention relates to semiconductor manufacturing equipment technical field, particularly a kind of mask platform of the vertical gravity-bending of improvement mask for litho machine.
Background technology
Along with the development of TFT-LCD technology, in order to reduce manufacturing cost, the size of Glass constantly increases, developed into 8.5 generations (glass is of a size of 2200mm × 2500mm) the large production line from generation to generation of main flow at present, Japanese Sharp even introduced for 10 generations line (glass is of a size of 2800mm × 3000mm).Meanwhile, manufacture TFT figure, the mask size that photoetching uses along with generation increased in size also large in change.For the mask size that Nikon litho machine uses, 8.5 generation mask size to have reached 1400mm(long) × 1220mm(is wide) × 13mm(is thick).So large mask is placed in mask platform, is inevitably subject to the impact of downward gravity, on vertical, produce Bending Deformation.And along with the reduction of TFT substrate glazing routing CD size, require more and more higher to resolution of photoetching equipment, mask makes focal plane Focus during photoetching change in this gravity-bending distortion on vertical, and then on critical size CD and alignment Overlay homogeneity by producing more and more serious impact, need to solve as early as possible.
In ic manufacturing, although the mask of photoetching is less, be generally 6 inches (152.4mm × 152.4mm), thickness is 6.35mm.But after process node narrows down to nanometer scale, the impact of flexural deformation on photoetching process of mask be can not ignore equally.
At present, the photoetching process error introduced this mask flexure distortion that causes due to gravity, equipment and manufacturer, mainly through after analog simulation, compensate and improve its impact on photoetching process in software.But this method has its limitation, use same compensation for different masks, compensation effect differs and establishes a capital very well, and this distortion of mask is still fundamentally being eliminated by the transformation of hardware in optimal manner by institute.
As Figure 1-3, be occur diastrophic schematic diagram after the simplification structure of current mask platform and mask are placed on mask platform.1 for mask platform producing the vacuum suction system of downward suction to mask; 2 is mask platform; 3 is the light transmission part of mask platform; 4 is the quartzy face of mask with chromium figure; 5 is the plastic film layers Pellicle film of mask.Dotted arrow represents that mask is transmitted the direction that mask platform sent to by mechanical arm.
Current, mask is transmitted mechanical arm and is placed on after in mask platform, and two edges in quartzy face contact with the vacuum suction unit in mask platform, are fixed in mask platform by downward absorption affinity, and simultaneously due to Action of Gravity Field, mask has reclinate distortion.Carry out aiming at of mask and mask platform afterwards, move with mask platform, expose, by the substrate of glass glass or silicon chip wafer on the Graphic transitions on mask to lower work piece platform.
Summary of the invention
In order to overcome the vertical gravity-bending of mask, the present invention proposes a kind of mask platform improving the vertical gravity-bending of mask, it is characterized in that: described mask platform also comprises the symmetrical system outwards deviating from the pulling force in mask direction of mask applying.
Preferably, describedly the symmetrical system outwards deviating from the pulling force in mask direction is applied to mask comprise multiple vacuum suction systems mask being applied to symmetrical outwards pulling force.
Preferably, described is symmetrical two or four to the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction of mask applying.
Preferably, describedly apply the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction to mask and be arranged on the guide rail of mask platform, after mask places, described vacuum suction system moves to mask edge by guide rail.
Preferably, describedly the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction is applied to mask comprise multiple absorbing unit.
Preferably, described mask platform also comprises the vacuum suction system producing downward suction.
The present invention, on the basis of original mask platform, increases the system that can apply symmetrical outwards pulling force to mask side direction both sides or edge, as vacuum suction system, from the direction at mask quartz edge, face, produces symmetrical outside pulling force to mask.These outside pulling force can improve due to Action of Gravity Field, the phenomenon being bent downwardly distortion that mask produces.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Diastrophic schematic diagram is there is in Fig. 1-3 after existing mask platform structure and mask are placed on mask platform;
Fig. 4 is the mask platform first example structure schematic diagram that the present invention improves the vertical gravity-bending of mask;
Fig. 5 is the mask platform second example structure schematic diagram that the present invention improves the vertical gravity-bending of mask;
Fig. 6 is mask platform the 3rd example structure schematic diagram that the present invention improves the vertical gravity-bending of mask.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Fig. 4 is the mask platform first example structure schematic diagram that the present invention improves the vertical gravity-bending of mask, can see that this programme is on the basis of original mask, a set of vacuum suction system 7 that outside absorption affinity is provided respectively is added in the right and left symmetric position of mask platform, often overlap vacuum suction system and can comprise several absorbing units, this example comprises an absorbing unit for a set of adsorption system and is described.Be connected with a guide rail 6 bottom this adsorption system 7, under the driving of motor, can move left and right on guide rail 6.In figure, dotted arrow represents that mask is transmitted the direction that mask platform sent to by mechanical arm.When mask is not also delivered in mask platform, the vacuum suction system 7 of two sides is arranged in the graph position that figure dotted line represents, when mask is sent to after in mask platform, vacuum suction system 7 along guide rail 6 close to and final near the quartz edge about mask.At this moment the vacuum suction system 1 producing downward suction and the vacuum suction system 7 providing outside absorption affinity apply downward and symmetrical outside absorption affinity to mask simultaneously, improve downward flexural deformation while making mask be fixed on mask platform.Process then, after mask is aimed at mask platform, moves with mask platform, exposes, by the Graphic transitions on mask in glass or the wafer substrate on lower work piece platform.
Fig. 5 is the mask platform second example structure schematic diagram that the present invention improves the vertical gravity-bending of mask, that two covers provide the vacuum suction system 7 of outside absorption affinity to be positioned at the same side of the vacuum suction system 1 producing downward suction with the difference of the first embodiment, the i.e. fore-and-aft direction of mask platform, this direction is also the direction that mask is transmitted that mask platform sent into by mechanical arm.When mask is not also put in mask platform, vacuum suction system 7 is positioned at mask platform lower broken line graph position.When mask is placed in mask platform, two cover vacuum suction systems 7 are driven by the motor be attached thereto and rise, by hole 8 reserved in mask platform, be raised to mask quartz edge with on high position, then move to mask edge direction and finally abut against the edge before and after mask.At this moment the vacuum suction system 1 producing downward suction and the vacuum suction system 7 providing outside absorption affinity to the outside absorption affinity that mask applies downwards and front and back are symmetrical, improve downward flexural deformation while making mask be fixed on mask platform simultaneously.
Fig. 6 is mask platform the 3rd example structure schematic diagram that the present invention improves the vertical gravity-bending of mask, in the present embodiment, mask platform comprises the vacuum suction system 7 that four covers can provide outside absorption affinity, namely respectively has a set of vacuum suction system 7 at four edges all around of mask.All the other are identical with the second embodiment.Mask is admitted to the direction of mask platform still as dotted arrow direction.When mask is not also put in mask platform, each vacuum suction system 7 is positioned at mask platform lower broken line graph position.When mask is placed in mask platform, four cover vacuum suction systems 7 are driven by the motor be attached thereto and rise, by hole 8 reserved in mask platform, be raised to mask quartz edge with on high position, then move to mask edge direction and finally abut against mask edge all around.At this moment the vacuum suction system 1 producing downward suction and the vacuum suction system 7 providing outside absorption affinity apply downwards and outside absorption affinity symmetrical all around mask simultaneously, improve downward flexural deformation while making mask be fixed on mask platform.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (6)
1. improve a mask platform for the vertical gravity-bending of mask, it is characterized in that: described mask platform also comprises the symmetrical system outwards deviating from the pulling force in mask direction of mask applying.
2. improve the mask platform of the vertical gravity-bending of mask as claimed in claim 1, it is characterized in that: describedly the symmetrical system outwards deviating from the pulling force in mask direction is applied to mask comprise multiple vacuum suction systems mask being applied to symmetrical outwards pulling force.
3. improve the mask platform of the vertical gravity-bending of mask as claimed in claim 2, it is characterized in that: described is symmetrical two or four to the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction of mask applying.
4. improve the mask platform of the vertical gravity-bending of mask as claimed in claim 2, it is characterized in that: describedly the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction is applied to mask be arranged on the guide rail of mask platform, after mask places, described vacuum suction system moves to mask edge by guide rail.
5. improve the mask platform of the vertical gravity-bending of mask as claimed in claim 2, it is characterized in that: describedly the symmetrical vacuum suction system outwards deviating from the system of the pulling force in mask direction is applied to mask comprise multiple absorbing unit.
6. improve the mask platform of the vertical gravity-bending of mask as claimed in claim 1, it is characterized in that: described mask platform also comprises the vacuum suction system producing downward suction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737701.9A CN104749894B (en) | 2013-12-30 | 2013-12-30 | It is a kind of to improve the mask platform of the vertical gravity-bending of mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737701.9A CN104749894B (en) | 2013-12-30 | 2013-12-30 | It is a kind of to improve the mask platform of the vertical gravity-bending of mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104749894A true CN104749894A (en) | 2015-07-01 |
| CN104749894B CN104749894B (en) | 2017-08-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310737701.9A Active CN104749894B (en) | 2013-12-30 | 2013-12-30 | It is a kind of to improve the mask platform of the vertical gravity-bending of mask |
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| Country | Link |
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| CN (1) | CN104749894B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09211872A (en) * | 1996-02-07 | 1997-08-15 | Canon Inc | Master plate, holding device for master plate, exposure device using the device, and production of device |
| US20030081193A1 (en) * | 2001-06-01 | 2003-05-01 | White Donald L. | Holder, system, and process for improving overlay in lithography |
| CN101663619A (en) * | 2007-05-10 | 2010-03-03 | 三荣技研股份有限公司 | Exposure method and exposure apparatus |
| CN101833246A (en) * | 2008-12-31 | 2010-09-15 | Asml控股股份有限公司 | Optically compensated unidirectional reticle bender |
| CN103201201A (en) * | 2011-02-28 | 2013-07-10 | 信越工程株式会社 | Thin plate-shaped workpiece adhesion and retention method, thin plate-shaped workpiece adhesion and retention device, and manufacturing system |
-
2013
- 2013-12-30 CN CN201310737701.9A patent/CN104749894B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09211872A (en) * | 1996-02-07 | 1997-08-15 | Canon Inc | Master plate, holding device for master plate, exposure device using the device, and production of device |
| US20030081193A1 (en) * | 2001-06-01 | 2003-05-01 | White Donald L. | Holder, system, and process for improving overlay in lithography |
| CN101663619A (en) * | 2007-05-10 | 2010-03-03 | 三荣技研股份有限公司 | Exposure method and exposure apparatus |
| CN101833246A (en) * | 2008-12-31 | 2010-09-15 | Asml控股股份有限公司 | Optically compensated unidirectional reticle bender |
| CN103201201A (en) * | 2011-02-28 | 2013-07-10 | 信越工程株式会社 | Thin plate-shaped workpiece adhesion and retention method, thin plate-shaped workpiece adhesion and retention device, and manufacturing system |
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| Publication number | Publication date |
|---|---|
| CN104749894B (en) | 2017-08-29 |
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Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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