JPH09211872A - Master plate, holding device for master plate, exposure device using the device, and production of device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correct deformation of a mask held on a mask chuck or the like. SOLUTION: A mask chuck 10 is equipped with positioning blocks 14, 15 and pressing blocks 16, 17 to position a mask E1 in a X-Y plane and clamp units 13a-13c to clamp the mask E1 in the Z-axis direction by three-point clamping method. Each of the positioning blocks 14, 15 and pressing blocks 16, 17 respectively holds a pattern correcting device 21-24 which sucks to push or pull the side edge of the mask frame H1 of the mask E1 to change the outer shape of the membrane M.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an original plate such as a mask for an exposure apparatus which has been miniaturized using X-rays as exposure light, an original plate holding apparatus, an exposure apparatus using the same, and a device manufacturing method.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have been highly integrated, semiconductor devices have been further miniaturized, and 256 MDRAM
The semiconductor element of 0.25 μm requires a line width of 0.18 μm, and the semiconductor element of 1G DRAM requires a line width of 0.18 μm.
Also, regarding the overlay accuracy of the baking pattern,
For example, in the case of a semiconductor element of 256M DRAM, 80n
m is 60 nm in the case of a semiconductor device of 1G DRAM.

A mask (original plate) of an exposure apparatus for printing such a miniaturized pattern on a substrate such as a wafer with high overlay accuracy is generally manufactured by the steps shown in FIG. That is, the thin film M _0, such as SiC film or SiN film on one surface of the Si substrate S ₀ as shown in FIG. 13 (a) is formed by a CVD method or the like, a Si substrate by back etching, as shown in (b) After removing the central portion of S ₀ to form the opening R covered with the thin film (membrane) M ₀ , as shown in (c), the back surface of the Si substrate S ₀ is made of high-rigidity ceramic such as SiC or glass. It adheres to the produced mask frame H ₀ , and as shown in (d), a heavy metal pattern P ₀ is formed on the membrane M ₀ by a known EB drawing method or plating.

The mask E ₀ thus manufactured is attracted to the mask stage of the exposure apparatus, the pattern inspection machine, or the like by magnetic force or vacuum attraction force.

For example, as shown in FIG. 14, mask E ₀
The magnetic ring G ₁ is fixed to the back surface of the mask frame H ₀ of _{No. 3} , and this is attracted to the magnetic ring G ₂ fixed to the mask chuck B ₀ by the magnetic attraction force as shown in FIG. At this time, the outer peripheral edge of the mask E ₀ is V block N _0.
By abutting against, the positioning in the plane parallel to the pattern surface of the mask E ₀ (positioning in the XY directions) is performed.

In this way, the mask E ₀ held on the mask chuck B ₀ is irradiated with X-rays or the like from the direction of the arrow C (Z-axis direction), and the pattern P ₀ of the mask E ₀ is projected onto a wafer (not shown). .

In the method utilizing the vacuum suction force, suction holes are provided in the mask frame instead of the magnetic ring, and the mask chuck and the mask frame are brought into surface contact with each other by the vacuum suction force.

As described above, the mask holding device (original plate holding device) utilizing the magnetic attraction force or the vacuum attraction force requires high-precision surface finishing on the contact surface between the mask frame and the mask chuck, resulting in a high equipment cost. Invite. For example, when the thickness of the mask frame is 13 mm and there is an error of 0.3 μm in the flatness between the mask frame and the mask pattern, the mask pattern before being held by the mask chuck and the mask pattern held by the mask chuck are separated. It has been confirmed that a displacement of 90 nm occurs and the displacement of the pattern reaches 27 nm even when the mask frame has a thickness of 2 mm.

Therefore, as shown in FIG. 16, three clamp units 101 to 103 separated along the XY plane are provided.
Has developed a so-called three-point clamp type mask holding device for fixing the mask E ₀ to the mask chuck 110 by clamping the mask E ₀ in the Z-axis direction. This is done by first pressing the three positioning members 111 to 113 integrated with the mask chuck 110 to the pressing device 114,
115 an XY direction (X-axis direction and the Y-axis direction of the mask E ₀ by the outer peripheral edge of the mask E ₀ resiliently abuts by ω
Performs positioning of the Z-axis direction), then, the mask E ₀ by driving each clamp unit 101 to 103 by clamping in the Z-axis direction, the Z-axis direction of the mask E ₀ and ωX axis and ωY axis The surface of the mask and mask chuck does not need to be finished with high precision as in the case of using the magnetic attraction force or the vacuum attraction force, and it is applied to the EB lithography system that uses the electron beam as it is. it can. Therefore, it should be noted that the same mechanism of the mask holding device can be used from the step of forming the pattern on the mask to the step of exposing the wafer using the mask to avoid the deformation of the pattern due to the transfer of the mask. It has advantages.

However, in the three-point clamp type mask holding device, when distortion such as warpage occurs in the membrane in the mask manufacturing process by the above-mentioned EB drawing device,
Alternatively, when the membrane absorbs the energy of the exposure light during exposure to cause thermal strain, etc., the temperature and flatness of the mask chuck should be used like a mask holding device that uses vacuum attraction or magnetic attraction. It is not possible to correct the shape and position of the pattern.

That is, in the case of a mask holding device using a vacuum attraction force or a magnetic attraction force, the temperature of the mask chuck is controlled by supplying a temperature adjusting liquid to the internal pipe of the max chuck and the like. Thermal distortion can be eliminated by adjusting the temperature of the mask in contact (Japanese Patent Laid-Open No. Sho 56-56)
-112732), it is possible to prevent the bending of the mask frame by utilizing the flatness of the mask chuck by adsorbing the mask frame on the surface of the mask chuck. Since the mask chucks are in point contact with each other, the heat transfer efficiency between them is low, and it is difficult to correct the pattern using the mask chuck flatness and heat transfer.

In particular, the mask of the exposure apparatus that uses X-rays as exposure light has a very thin membrane having a thickness of about 2 μm, and therefore has low rigidity. For this reason, the pattern on the membrane has a distortion in which the four edges of the rectangular exposure field angle are not linear, but are curved inward or outward of the exposure field angle, respectively. It changes variously depending on the clamping force when it is held by a mask chuck or the like.

Therefore, the deformation of the exposure field angle of the pattern due to such distortion of the mask membrane is changed from FIG.
The pattern is classified into 9 types as shown in (i), and when the pattern is deformed or displaced due to the mask transfer, a PZT film for deforming the outer peripheral edge of the membrane to correct the pattern shape is used. A mask attached to the membrane was developed (US Pat. No. 4,964,1).
45).

[0014]

However, according to the above-mentioned conventional technique, in the mask holding device for holding the mask by the three-point clamping method, the deformation of the pattern of the mask and the positional deviation are eliminated by controlling the temperature of the mask chuck. Is extremely difficult. Even when the PZT film is added to the membrane as described above, it is necessary to connect the electrode of each PZT to the wiring of the mask chuck every time the mask of the exposure device or the like is replaced, and the mask replacement work is complicated. In addition, PZT can be directly applied to a low-rigidity membrane.
Due to the pressure applied, troubles such as membrane breakage frequently occur.

The present invention has been made in view of the above-mentioned unsolved problems of the prior art, and in a mask stage of an exposure apparatus that holds an original plate such as a mask by a three-point clamp system or the like, thermal strain of a membrane is generated. An object of the present invention is to provide an original plate, an original plate holding device, an exposure device using the same, and a device manufacturing method that can easily correct pattern deformation and positional deviation due to the above.

[0016]

In order to achieve the above object, the original plate of the present invention comprises a frame member having an opening,
The frame member has a membrane disposed in the opening, and the frame member is provided with a coupling portion that is detachably coupled to the pattern correcting means of the original holding device. It is characterized in that the membrane is deformed by the transmitted compressive force or tensile force.

The connecting portion may be formed in the central portion of each side edge of the frame member.

Further, the frame member has an opening and a membrane disposed in the opening of the frame member, and the frame member changes a size of the void close to the membrane and the void. The original plate may be provided with a dimension adjusting means for deforming the membrane by making it.

The original holding device of the present invention has positioning means for positioning an original having a membrane and a frame member, and pattern correcting means detachably connected to a connecting portion provided on the frame member of the original. The pattern correcting means is configured to transmit the compressive force or the tensile force generated by the driving means to the frame member via the coupling portion to deform the membrane.

It is preferable that the pattern correction means has a suction means for sucking the joint portion of the frame member of the original plate, and the drive means is configured to reciprocate the suction means.

The pattern correcting means has at least one engaging member that engages with the joint portion of the frame member of the original plate,
The drive means may be configured to reciprocate the engagement member.

[0022]

The original plate such as a mask is positioned on the original plate holding device, and the pattern correcting means is connected to the connecting portion of the frame member of the original plate. The compressive force or the tensile force of the pattern correcting means is transmitted to the frame member via the connecting portion to deform the membrane, thereby correcting the deformation and displacement of the pattern on the membrane.

Whenever the exposure field angle of a substrate such as a wafer is stepwise moved, the deformation and positional deviation of the pattern of the membrane are measured, and the pattern correcting means is driven to eliminate the deformation and positional deviation of the pattern, so that there is no transfer deviation. Highly accurate pattern transfer and printing can be performed.

When exchanging the original plate, the connection part of the used original plate and the pattern correcting means are released from the original holding device, the new original plate is carried in, and the connecting part is connected to the pattern correcting means. To do. If the connecting portion is a through hole or unevenness formed in the original frame member and is configured to engage with the engaging member of the pattern correction means, the shape of the frame member for the connecting portion will be There is no risk of complication, and the work of connecting the connecting portion to the pattern correcting means is simple. Further, if the joint portion is the side edge of the frame member and the suction means of the pattern correction means adsorbs it, it is not necessary to change the shape of the original plate for the joint portion.

Compared to the case where a PTZ film or the like is added to the membrane to correct the pattern, the original plate can be easily replaced without complicated wiring connection work when the original plate is replaced. The throughput can be greatly improved. In addition, since the compressive force and the tensile force that deform the membrane are transmitted to the frame member, the PTZ
There is no risk of the membrane being damaged as in the case of directly applying pressure or the like to the membrane.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a mask E ₁ as an original plate according to the first embodiment, which is provided on a mask substrate S ₁ made of a Si substrate or the like and a central opening portion thereof as in the conventional example. And a mask frame H ₁ which is a rectangular frame member adhered to the mask M ₁ and the mask substrate S ₁ , and a pattern P ₁ made of a heavy metal X-ray absorber such as Au is formed on the membrane M _1. ing.

The material of the mask frame H ₁ is a low thermal expansion material such as glass, ceramics such as SiC and SiN, or a material having a Si substrate as a base material. Further, the mask substrate S ₁ is bonded to the mask frame H ₁ by adhesion or anodic bonding. The membrane M ₁ is a thin film of SiN or the like that transmits X-rays, and this is a flat mask substrate S.
_A film is formed on the substrate ₁ by the CVD method or the like, and the central portion of the mask substrate S ₁ is removed by back etching to form the opening. For the pattern P ₁ , a mask substrate S ₁ having an opening is bonded to a mask frame H ₁ and then a thin film of Au or the like is formed on the membrane M ₁ and E
It is obtained by patterning with a B drawing device or the like.

A mask holding device, which is an original holding device for holding the mask E ₁ in an EB drawing device, an X-ray exposure device for semiconductor manufacturing, etc., uses a three-point clamp system to form the mask E ₁
Fix (position). That is, as shown in FIG. 2, two lateral lines of the mask E _{1 which} are orthogonal to each other are brought into contact with an XY positioning device composed of positioning members 11a to 11d in the X-axis direction and the Y-axis direction which are integrated with the mask chuck 10 to press the pressing member 12a. By pressing the mask E ₁ against the XY positioning device by a pressing device composed of ~ 12d, X of the mask E ₁
Positioning is performed in the axial direction, the Y-axis direction, and the ωZ-axis direction, and subsequently, the mask E ₁ is clamped in the Z-axis direction by the three clamp units 13a to 13c that form a positioning unit together with the XY positioning device. ,
Positioning is performed in the Z-axis direction, the ωX-axis direction, and the ωY-axis direction.
In this way, the mask E ₁ is positioned in the 6 axis directions, and E
The mask E ₁ is stably held in a B drawing apparatus, an X-ray exposure apparatus for semiconductor manufacturing, or the like.

However, in the three-point clamp type mask holding device, when distortion such as warpage occurs in the membrane in the mask manufacturing process by the above-mentioned EB drawing device,
Alternatively, when the membrane absorbs the energy of the exposure light during exposure to cause thermal strain, etc., the temperature and flatness of the mask chuck should be used like a mask holding device that uses vacuum attraction or magnetic attraction. It is not possible to correct the shape and position of the pattern.

That is, in the case of a mask holding device using a vacuum attraction force or a magnetic attraction force, the temperature of the mask chuck is controlled by supplying a temperature adjusting liquid to the internal pipes of the max chuck and the like. Warping of X-rays and thermal distortion are eliminated by adjusting the temperature of the mask in contact (see Japanese Patent Laid-Open No. 56-112732), and the mask frame is attracted to the surface of the mask chuck to remove the mask chuck. The flatness can be used to prevent bending of the mask frame, but in the case of the three-point clamp method, the heat transfer efficiency between the mask and the mask chuck is low because the point contact is between the mask and the mask chuck. It is difficult to correct the pattern by controlling the temperature of the mask chuck.

Then, the outer peripheral edge of the mask frame H ₁ is pushed or pulled in the X-axis direction or the Y-axis direction as indicated by arrows L _{1 to} L ₄ in FIG.
_{The first} to fourth pattern correction devices 21, which are pattern correction means for correcting the deformation and positional deviation of the pattern P ₁ by bending the outer peripheral edge of the square ₁ into any of the nine types shown in FIG. ~ 24 are provided.

As shown in FIG. 2, each of the pattern correction devices 21 to 24 has suction pads 21a to 24a which are suction means for sucking a side edge which is a connecting portion of the mask frame H ₁ by a vacuum suction force or the like, and these. Air cylinders 21b to 21b, which are driving means for advancing and retracting the X-axis direction and the Y-axis direction, respectively.
24b. The first pattern correction device 21 is held by the first positioning block 14 together with the positioning members 11a, 11b in the X-axis direction, and the second pattern correction device 22 is held by the second positioning members 11c, 11d in the Y-axis direction. The third pattern correcting device 23 is held by the positioning block 15, the third pattern correcting device 23 is held by the first pressing block 16 together with the pressing members 12a and 12b in the X-axis direction, and the fourth pattern correcting device 24 is pressed by the pressing member 12c in the Y-axis direction. , 12d
Along with this, it is held by the second pressing block 17.

Further, the first and second positioning blocks 1
Screws 4 and 15 are fixed on the mask chuck 10, and the first and second pressing blocks 16 and 17 are moved in the X-axis direction by driving devices 16a and 17a such as cylinders.
Is driven in the Y-axis direction, the pressing members 12a~12d presses the side edge of the mask frame H _1, whereby the above-described positioning is carried out. Each clamp unit 13a-13
c is supported on the mask chuck 10 and performs the above-mentioned clamping operation by an actuator composed of a rotation mechanism and a linear movement mechanism (not shown).

The central portion of the first positioning block 14 is mask chuck 1 with one screw 14b.
It is fixed to 0 and is configured to be slightly pivotable around the screw 14b. This is the pressing members 12a-12
When the mask E ₁ is positioned by pressing d on the side edge of the mask frame H _1, the _first positioning is performed when a rotational moment is generated in the mask E _{1 due} to an imbalance of the driving force of the pressing blocks 16 and 17. This is for pivoting the block 14 to avoid over-restraining of the mask E ₁ .

Further, each of the pattern correcting devices 21 to 24 has a positioning member 11a to 11d and a pressing member 12a to 12d.
It is arranged between d and is configured to push or pull the central portion of each side edge of the mask frame H ₁ . By thus pushing and pulling the central portion of each side edge of the mask frame H _1, deforming the membrane M ₁ by the action of compressive force or tensile force of the X-axis direction and the Y-axis direction to the mask frame H ₁ And the pattern P ₁
Correct the shape and displacement of the. By generating the force for correcting the pattern P ₁ at the center between the positioning members 11 a to 11 d, the deformation of the pattern P ₁ and the correction of the positional deviation can be performed extremely quickly and accurately.

The correction of the pattern P ₁ by each of the pattern correction devices 21 to 24 is performed by the positioning members 11a to 11d and the pressing members 12a to 12d for positioning in the X-axis direction, the Y-axis direction and the ωZ-axis direction, and each clamp unit 13a to. 13c
After completing the positioning in the Z-axis direction, the ωX-axis direction, and the ωY-axis direction by the strain measurement means, the strain near each side edge of the membrane M ₁ is measured by the strain measuring means by using the alignment mark of the mask E ₁ , as described later. This is performed by detecting with a certain alignment scope, and controlling the driving amount of the air cylinders 21b to 24b of each of the pattern correction devices 21 to 24 by a control means (not shown) so as to eliminate them.

According to the present embodiment, the mask frame is deformed to correct the pattern deformation and the positional deviation on the membrane, so that the outer peripheral edge of the membrane is directly deformed by the RZT film or the like. It is possible to avoid troubles such as excessive stress applied to a membrane having low rigidity and damage, and to perform highly accurate and safe pattern correction.

In addition, there is no need for an interface for connecting the electrodes of the PZT to the wiring of the mask chuck every time the mask is replaced, and therefore the mask can be replaced very quickly.

Further, since the pattern correction device is for adsorbing and pushing or pulling the side edge of the mask by the suction pad, the mask needs to be changed in shape so as to connect the pattern correction device thereto. Not. Therefore, the cost of the mask can be reduced and the life of the mask can be greatly extended without complicating the structure of the mask.

FIG. 3 shows a mask holding device which is an original holding device according to the second embodiment, and it includes suction pads 21a to 24a which adsorb each side edge of the mask E ₁ of the first embodiment.
Instead of “a”, a lock as an engagement member that engages with each of the _four through holes O _{1 to} O ₄ that are coupling portions provided in the mask frame H ₂ that is a frame member of the mask E ₂ that is the original plate. The pins 31a to 34a are used. In addition, as shown in FIG. 4, the locking pins 31a to 34a are set in the X-axis direction,
An air cylinder 31 which is a driving means for moving back and forth in the Y-axis direction.
b to 34b are arranged on the back surface side of the mask chuck 10, and as shown in FIG. 5, the locking pins 31a to 34a are provided in the mask chuck 10 through holes 10a to 10d.
Through the mask chuck 10 and protrudes to the surface of the mask chuck 10. Since the mask chuck 10, the positioning members 11a to 11d, the pressing members 12a to 12d, the clamp units 13a to 13d, etc. are the same as those in the first embodiment, they are designated by the same reference numerals and the description thereof will be omitted.

[0042] this embodiment, since one that binds the pattern correction apparatus to the mask frame H ₂ by engaging the locking pin 31a~34a the through-hole O ₁ ~ O ₄ of the mask frame H _2, pattern This has the advantage that the correction device and the mask frame are strengthened, and the pattern correction can be performed with higher accuracy and stability. Other points are the same as the first embodiment.

A through hole O ₁ for engaging the locking pins 31a to 34a of the pattern correction device with the mask frame H ₂ is provided.
Instead provided ~ O _4, as shown in FIG. 6, provided locking groove D ₁ to D ₄ is a linear shape ridge extending along each side edge on the back side of the mask frame H _3, Kakukakaritomemizo D _{1 to} D ₄
Alternatively, the plurality of locking pins 41a to 44a shown in FIG. 7 may be locked. In this case, air cylinders 41b to 44b for individually advancing and retracting the plurality of locking pins 41a to 44a are arranged on the front surface side of the mask chuck 10. The pattern correction device has many locking pins 41a.
Since having ～44A, on top which can correct the pattern of the mask E ₃ finer in a more accurate, since the locking pin 41a~41d also has functions to firmly position the mask E _3, pressing member 12a~12d and press block 16 for positioning the mask E _3,
It has the advantage that 17 can be omitted.

FIG. 8 shows a mask E ₄ as an original plate according to the third embodiment, which is a long hole K _{1 to} K ₄ which is a space along each side edge of the mask frame H ₄ and is inside thereof. forming a having thereon a linear screw 51a~54a a plurality of dimensioning means that mutually spaced in the longitudinal direction of the long holes K ₁ ~K _4, the tip of each linear screw 51a~54a Each long hole K
_{1 to} K ₄ is abutted on the inner side surface and screwed into a screw hole provided on the opposite surface. Each direct acting screw 51a ~
54a to adjust the length exposed to the elongated holes K ₁ ~K ₄ by rotating manually or using unillustrated jig, thereby adjusting the width dimension of the long hole K ₁ ~K ₄ Deform the membrane M ₄ with. The rigidity of the mask frame H ₄ is significantly reduced by each of the elongated holes K _{1 to} K ₄ ,
Since the mask frame H ₄ is easily deformed, there is an advantage that more accurate pattern correction can be performed.

Next, in the exposure apparatus equipped with the mask holding apparatus according to the first embodiment, the membrane M of the mask E ₁ is
A method of detecting the distortion of ₁ will be described with reference to FIG. The mask chuck 10 that holds the mask E ₁ is coupled to the opening of the mask stage 51 of the exposure apparatus via an elastic hinge 51a, and the membrane M ₁ is 4 along each side edge.
It has individual alignment marks A _{1 to} A ₄ . These alignment marks A _{1 to} A ₄ are aligned with the alignment marks B _{1 to} B on the wafer stage 52 that has attracted the wafer W _1.
Observe with the alignment scope 53 together with ₄ ,
Alignment marks A _{1 to} A between mask E ₁ and wafer W _1
4 , wafer stage 52 so that B _{1 to} B ₄ are overlapped.
Is driven, and the amount of the drive is detected based on the output of the interferometer 55 that receives the reflected light of the mirror 54 to measure the strain of the membrane M ₁ of the mask E ₁ . The alignment marks B _{1 to} B ₄ of the wafer stage 52 are drawn on the Si wafer on the mark base 56 joined to the end of the wafer stage 52.

The air cylinders 21b to 24 of the pattern corrections 21 to 24 are automatically measured by actually measuring the strain of the membrane M _1.
The step of driving b (see FIG. 2) to eliminate the deformation and displacement of the pattern of the mask E ₁ is performed as follows, for example. Mask E ₁ by alignment scope 53
Moves the wafer stage 52 while observing the alignment marks A _1, the alignment mark B ₁ on the mark table 56 is stopped at a position overlapping the alignment marks A ₁ of the mask E _1. X of wafer stage 52 at this time
The driving amount dx ₁ in the axial direction is detected from the output of the interferometer 55. Subsequently, to obtain the X-axis direction of the driving amount dx ₂ and the wafer stage 52 is moved so alignment mark B ₂ of the alignment marks A ₂ and the wafer stage 52 of the mask E ₁ overlap. Difference Δd between the driving amounts dx ₁ and dx ₂
x ₁ (dx ₁ −dx ₂ ) is calculated, and this is used as the membrane M.
The driving amount P ₁ of the air cylinder 23b of the pattern correction 23 is stored in the storage circuit as the dimension of _one of the one side edge.
Then, by changing the output of the air cylinder 23b as a new driving amount P _2, as described above with reference to the alignment mark B _1, B ₂ of the alignment marks A _1, A ₂ and the wafer stage 52 of the mask E ₁ in this state The alignment scope 53 is used to obtain the dimension Δdx ₂ of the side edge of the membrane M ₁ . The same measurement is performed on the other side edges of the membrane M ₁ , and the data dx thus obtained is obtained.
_{From 1} , ₁ , dx ₂ , P ₁ , P _2, etc., the optimum driving amount of each air cylinder 21b to 24b for setting each side edge of the membrane M ₁ to a predetermined value is obtained by the method of least squares. The resulting eliminates distortion of the membrane M ₁ by controlling the driving force of the air cylinder 21b~24b based on the optimal drive amount, to correct the deformation and displacement of the pattern.

Next, the entire exposure apparatus according to this embodiment is shown in FIG.
Description will be made based on 0.

This is because the magnifying mirror 71 magnifies X-rays such as charged particle storage ring radiation emitted from the light source 70 which is the exposing means, and then passes through the mask E ₁ disposed in a decompression chamber (not shown). irradiating the wafer W _1, intended to transfer the pattern of the mask E ₁ to the wafer W _1, between the mask E ₁ and magnifying mirror 71, a shutter 72 is provided for equalizing the intensity distribution of the X-ray To be done.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described exposure apparatus will be described. FIG. 11 shows a manufacturing flow of a semiconductor device (semiconductor chip such as IC or LSI, liquid crystal panel, CCD or the like). In step S1 (circuit design), the circuit of the semiconductor device is designed. In step S2 (mask production), a mask on which the designed circuit pattern is formed is produced. Step S
In 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step S4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. Step S5 (assembly) is called a post-step, and is a step of forming a semiconductor chip using the wafer manufactured in step S4, and an assembly step (dicing,
Bonding), a packaging step (chip encapsulation), and the like. In step S6 (inspection), step S5
Inspection such as operation confirmation test and durability test of the semiconductor device manufactured in 1. is performed. Through these steps, the semiconductor device is completed and shipped (step S7).

FIG. 12 shows the detailed flow of the wafer process. In step S11 (oxidation), the surface of the wafer is oxidized. In step S12 (CVD), an insulating film is formed on the wafer surface. In step S13 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step S1
In step 4 (ion implantation), ions are implanted into the wafer. In step S15 (resist processing), a photosensitive agent is applied to the wafer. In step S16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step S17 (developing), the exposed wafer is developed. In step S18 (etching), portions other than the developed resist image are removed. In step S19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0051]

Since the present invention is configured as described above, it has the following effects.

In a mask stage or the like of an exposure apparatus that holds an original plate such as a mask by a three-point clamp system or the like, it is possible to easily eliminate pattern deformation and positional shift due to thermal strain of the membrane. As a result, it is possible to realize an exposure device that transfers and prints an extremely fine pattern with high accuracy.

Further, since there is no fear that the structure of the original plate becomes complicated or the work of exchanging the original plate becomes complicated and the throughput is lowered, it can greatly contribute to the improvement of the productivity of the exposure apparatus.

[Brief description of drawings]

FIG. 1 shows a mask according to a first embodiment, (a)
Is a plan view thereof, and (b) is a sectional view.

FIG. 2 is a schematic plan view showing a mask holding device according to the first embodiment.

FIG. 3 is a schematic plan view showing a mask and a mask holding device according to a second embodiment.

FIG. 4 is a schematic plan view of the device shown in FIG. 3 viewed from the back surface side.

5 is a partial schematic cross-sectional view showing a part of the device shown in FIG.

FIG. 6 is a plan view of a mask according to a modification of the second embodiment as viewed from the back surface side.

FIG. 7 is a schematic plan view showing a mask holding device according to a modification of the second embodiment.

FIG. 8 is a schematic plan view showing a mask and a mask holding device according to a third embodiment.

FIG. 9 is a partial perspective view showing a part of the exposure apparatus according to the first embodiment.

FIG. 10 is an explanatory diagram illustrating the entire exposure apparatus.

FIG. 11 is a flowchart showing a manufacturing flow of a semiconductor device.

FIG. 12 is a flowchart showing a wafer process.

FIG. 13 is a diagram illustrating a mask manufacturing process.

FIG. 14 shows a mask according to a conventional example.

FIG. 15 shows a mask holding device for holding the mask of FIG.

FIG. 16 is a diagram illustrating a mask and a mask holding device according to another conventional example.

FIG. 17 shows the deformation of the membrane of the mask classified into 9 types of shapes.

[Explanation of symbols]

E _{1 to} E ₄ mask M _{1 to} M ₄ membrane O _{1 to} O ₄ through hole D _{1 to} D ₄ locking groove K _{1 to} K ₄ long hole 10 mask chuck 13a to 13c clamp unit 14, 15 positioning block 16, 17 Pressing block 21-24 Pattern correction device 21b-24b, 31b-34b, 41b-44b
Air cylinders 31a to 34a, 41a to 44a Locking pins 51a to 54a Direct acting screws

Claims (13)

[Claims] 1. A frame member having an opening, and a membrane disposed in the opening of the frame member,
The frame member is provided with a connecting portion that is detachably connected to the pattern correcting means of the original holding device, and the membrane is deformed by a compressive force or a tensile force transmitted from the pattern correcting means via the connecting portion. The original edition that is characterized by being. 2. The original plate according to claim 1, wherein the frame member is configured to be clamped by a three-point clamp system. 3. The original plate according to claim 1, wherein the joint portion is a through hole or an unevenness formed in the frame member. 4. The original plate according to claim 1, wherein the joint portion is formed at a central portion of each side edge of the frame member. 5. A frame member having an opening, and a membrane disposed in the opening of the frame member,
An original plate, wherein the frame member is provided with a space adjacent to the membrane and a size adjusting means for deforming the membrane by changing a size of the space. 6. The original plate according to claim 5, wherein the dimension adjusting means has at least one screw. 7. A positioning means for positioning an original having a membrane and a frame member, and a pattern correcting means detachably attached to a connecting portion provided on the frame member of the original, the pattern correcting means comprising: An original holding device, characterized in that the compressing force or the pulling force generated by the driving means is transmitted to the frame member via the coupling portion to deform the membrane. 8. The pattern correcting means has an adsorbing means for adsorbing the joint portion of the frame member of the original plate, and the driving means is configured to reciprocate the adsorbing means. Original plate holding device described. 9. The pattern correcting means has at least one engaging member that engages with a coupling portion of a frame member of the original plate, and the driving means is configured to reciprocate the engaging member. The original plate holding device according to claim 7. 10. The original holding device according to claim 7, wherein the positioning means is configured to position the original by a three-point clamp system. 11. An exposure apparatus comprising: the original holding device according to claim 7; and an exposure unit that exposes a substrate with exposure light emitted through the original held by the original holding device. 12. The exposure apparatus according to claim 11, further comprising: a strain measuring means for measuring the strain of the original membrane and a control means for controlling the pattern correcting means based on the output thereof. 13. A device manufacturing method having an exposure step of exposing a substrate by the exposure apparatus according to claim 11.