CN104746021A - Ring piece structure and manufacturing method thereof - Google Patents
Ring piece structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104746021A CN104746021A CN201310755011.6A CN201310755011A CN104746021A CN 104746021 A CN104746021 A CN 104746021A CN 201310755011 A CN201310755011 A CN 201310755011A CN 104746021 A CN104746021 A CN 104746021A
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- connection section
- ring
- reticulate pattern
- manufacture method
- annular knurl
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Abstract
The invention provides a ring piece structure and a manufacturing method thereof. The ring piece structure comprises a plurality of cylindrical connecting parts fixed on a ring piece, wherein reticulate patterns formed by knurling are arranged on the side walls of the connecting parts. Besides, the invention also provides the manufacturing method of the ring piece structure, and the method comprises the following steps: providing the ring piece; providing the cylindrical connecting parts with the reticulate patterns formed on the side walls; and fixing the plurality of cylindrical connecting parts on the ring piece. The ring piece structure has the beneficial effects that the reticulate patterns are formed on the connecting parts by knurling treatment to increase the roughness of the surfaces of the connecting parts and can retain a certain amount of deposits, namely the capability of absorbing the deposits is increased, and then the probability of scaling on the connecting parts is reduced. Moreover, the deposits retained in the reticulate patterns cannot be influenced by sputtered atoms in a sputtering process easily, so that the scaling of the deposits on the connecting parts is further avoided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to a kind of ring structure and manufacture method thereof.
Background technology
Commonly use sputtering sedimentation (Sputtering Deposition, SD) technique in semiconductor fabrication, for by metal sputtering to substrate to form film.This technique is physical vapor deposition (Physical VaporDeposition, PVD) one in, bombard sputtering target material by high energy particle, make to be left solid by the target atom of bombarding or molecule and enter gas, and precipitation is accumulated on substrate surface to be deposited and forms film.Described high energy particle technique has been come by special sputtering equipment.
In sputter procedure, usually in sputtering equipment, settle ring structure, to retrain the movement locus of sputtering particle, that is, described ring structure plays the effect of focused high-energy particle in sputter procedure.
Described ring structure is connected with sputtering equipment by the connection section (knob) of some projections.
Due in sputter procedure, ring structure can leave the particulate matter that sputtering produces, especially rest on described connection section.These particulate matter gather and to a certain degree peeling phenomenon (peeling) can occur afterwards in ring structure, and the settling peeled off not only can affect sputtering environment, also easily drops on sputtering surface, cause product to produce defect and even scrap.
For this reason, how to avoid deposit flaking phenomenon occurs connection section as far as possible, become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The present invention solve problem be to provide a kind of ring structure and manufacture method thereof, with increase described connection must not degree of roughness to make the sedimental ability grow of absorption, and then avoid as far as possible occur peeling phenomenon.
For solving the problem, the invention provides a kind of ring structure, comprising:
Ring;
Be fixed on the some columned connection section in described ring, the sidewall of described connection section is provided with the reticulate pattern of annular knurl formation.
Optionally, the material of described ring and connection section is tantalum.
Optionally, between described ring and connection section for being welded to connect.
Optionally, the roughness of described reticulate pattern is in the scope of 10 ~ 65 microns.
Optionally, the degree of depth of described reticulate pattern is in the scope of 0.1 ~ 0.8 millimeter.
Optionally, described reticulate pattern is the rhombus reticulate pattern that cross one another groove is formed.
Optionally, the density degree of described reticulate pattern is in the scope of 25 ~ 80TPI.
In addition, the present invention also provides a kind of manufacture method of ring structure, comprising:
Ring is provided;
Form columned connection section, the sidewall of described connection section is formed with reticulate pattern;
Some described connection sections are fixed in described ring.
Optionally, the step of ring is provided to comprise: to provide tantalum ring.
Optionally, the step of connection section is provided to comprise: to provide tantalum connection section.
Optionally, the step forming connection section comprises:
Tantalum rod is provided;
Remove the portion of material of the end of described tantalum rod, to form the cylinder that diameter is less than tantalum rod in the end of described tantalum rod;
Annular knurl process is carried out to described cylinder, to form described reticulate pattern at the sidewall of cylinder;
Remove part tantalum rod, remaining tantalum rod and cylinder form described connection section.
Optionally, the step of carrying out annular knurl process comprises: make the roughness of the reticulate pattern of formation in the scope of 10 ~ 65 microns.
Optionally, the step of carrying out annular knurl process comprises: make the degree of depth of the reticulate pattern of formation in the scope of 0.1 ~ 0.8 millimeter.
Optionally, the step of carrying out annular knurl process comprises: the annular knurl amount of pressure drop of annular knurl process is in the scope of 0.4 ~ 1.0 millimeter.
Optionally, the step of carrying out annular knurl process comprises: on the sidewall of cylinder, form cross one another groove by annular knurl process, and the reticulate pattern of formation is assumed diamond in shape.
Optionally, the degree of depth of the described reticulate pattern assumed diamond in shape is in the scope of 0.1 ~ 0.8 millimeter.
Optionally, step connection section being fixed on ring comprises: be fixed in described ring by described connection section by the mode of welding.
Compared with prior art, technical scheme of the present invention has the following advantages:
By to the process of described connection section annular knurl to form reticulate pattern, add the degree of roughness on connection section surface, described reticulate pattern can resident a certain amount of settling, that is, add connection section and adsorb sedimental ability, and then reduce the probability that connection section occurs peeling phenomenon.In addition, settling resident in reticulate pattern is not easy the sputtered atom impact in sputtered process, further avoid the settling generation peeling phenomenon on connection section.
Further, the reticulate pattern forming rhombus can strengthen the sedimental ability of absorption on the surface of connection section further.
Accompanying drawing explanation
Fig. 1 to Fig. 4 is the structural representation of ring structure one embodiment of the present invention;
Fig. 5 is the schematic flow sheet of manufacture method in an embodiment of ring structure of the present invention;
Fig. 6 to Fig. 9 is the structural representation of described connection section in each step formed.
Embodiment
Due in the process of carrying out sputtering sedimentation, the connection section (knob) of the ring in sputtering equipment can leave a certain amount of settling, easily there is peeling phenomenon when being attached to a certain degree in these settlings, the settling peeled off can affect sputtering environment and quality product.
For this reason, the invention provides a kind of ring structure, to avoid the settling generation peeling phenomenon on connection section as far as possible.With reference to figure 1 and Fig. 2, for ring structure of the present invention is at the structural representation of embodiment, comprising:
Ring 100;
Be fixed on the some columned connection section 110 in described ring 100, the sidewall of described connection section 110 is provided with the reticulate pattern 112(of annular knurl formation with reference to figure 2).
In the present embodiment, described ring 100 and connection section 110 all adopt tantalum (Ta) as material, but the material of the present invention to 100 and connection section 110 is not restricted.
Described ring 100 is placed in sputtering equipment by described connection section 110.
Described connection section 110 comprises annular boss 114 and the same cylinder 111 be located on described annular boss 114, wherein:
Described annular boss 114 is for being connected described connection section 110 with described ring 100; In the present embodiment, described annular boss 114 is with described ring 100 for being welded to connect, and that is, described connection section 110 and described ring 100 are for being welded to connect.
In conjunction with reference to figure 3, after described connection section 110 is installed on described ring 100, described annular boss 114 embeds in described ring 100.
In conjunction with reference to figure 4, the sidewall of cylinder 111 is provided with described reticulate pattern 112.
The benefit arranging described reticulate pattern 112 is:
On the one hand, described reticulate pattern 112 adds the roughness on described connection section 110 surface, and in sputter procedure, the gap of reticulate pattern 112 or groove have certain degree of depth and width, can hold and adsorb more settling 50, thus avoiding settling generation peeling phenomenon as far as possible.
On the other hand, shock due to sputtered atom may impel settling generation peeling phenomenon, but in the present invention, settling 50 drops and in the gap residing in the lines of reticulate pattern 112 or groove, sputtered atom in sputter procedure is not easy to get on settling 50, that is, the settling 50 be attached on reticulate pattern 112 is not easy the impact of the atom sputtered, thus the probability of peeling phenomenon occurs the settling 50 further reducing attachment.
In sum, ring structure of the present invention can be applied in the larger technique of sputtering intensity, and the phenomenon of deposit flaking can not occur, and also makes ring structure to be repeatedly used simultaneously, has saved cost.
Because the quality of tantalum metal is comparatively hard, in view of the annular knurl difficulty of processing for tantalum metal is larger, in the present embodiment, make the roughness of described reticulate pattern in the scope of 10 ~ 65 microns, the degree of depth of reticulate pattern 112 is in the scope of 0.1 ~ 0.8 millimeter, and such benefit is, while guarantee cylinder 111 surface has certain roughness, do not increase the difficulty of annular knurl technique, so that the processing of reticulate pattern 112 as far as possible.
Meanwhile, in the present embodiment, described reticulate pattern 112 is the rhombus reticulate pattern that cross one another gap or groove are formed, and that is, adds the gap that can be used for adsorbing settling 50 on described cylinder 111 surface, is conducive to adsorbing more settling 50.
In addition, the density degree of the reticulate pattern 112 in the present embodiment is at 25 ~ 80TPI(Teeth per Inch) scope in.Such benefit is, when not increasing the difficulty of processing of reticulate pattern 112, further increases reticulate pattern 112 for sedimental adsorptive power.
It should be noted that, described connection section 110 is not limited only to the structure mentioned in literary composition, also comprises as other necessary structures such as threaded holes, and the present invention does not repeat this and do not impose any restrictions yet.
In addition, with reference to figure 5, the present invention also provides a kind of manufacture method of ring structure, comprises the following steps:
Step S1, provides ring;
Step S2, forms columned connection section, and the sidewall of described connection section is formed with reticulate pattern;
Step S3, is fixed on some described connection sections in described ring.
The situation that the ring structure formed by above-mentioned steps can avoid the settling adsorbed to peel off as far as possible.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with Fig. 6 to Fig. 9.
Perform step S1, ring is provided.In the present embodiment, described ring is tantalum ring.Tantalum is the common metal making ring, and the present invention does not repeat this.
Continue to perform step S2, provide columned connection section, the sidewall of described connection section is formed with reticulate pattern.In the present embodiment, described connection section is also tantalum connection section;
This step S2 specifically comprises step by step following:
With reference to figure 6, perform S21 step by step, tantalum rod 10 is provided;
With reference to figure 7, perform S22 step by step, remove the portion of material of the end of described tantalum rod 10, to form the cylinder 111 that diameter is less than tantalum rod in the end of described tantalum rod, the sidewall of described cylinder 111 is for the formation of described reticulate pattern
With reference to figure 8, perform S23 step by step, annular knurl process is carried out to described cylinder 111, to form described reticulate pattern 112 at the sidewall of cylinder 111;
In the present embodiment, because the quality of tantalum is comparatively hard, in the present embodiment, the annular knurl amount of pressure drop of annular knurl process in the scope of 0.4 ~ 1.0 millimeter, to ensure the quality of the reticulate pattern after annular knurl 112.
Accordingly, the roughness of the reticulate pattern 112 of formation is in the scope of 10 ~ 65 microns, and such benefit is under the prerequisite not increasing difficulty of processing, increases the roughness on cylinder 111 surface as far as possible, is conducive to cylinder 111 and adsorbs more settling.
In addition, the degree of depth of the reticulate pattern 112 of the present embodiment is in the scope of 0.1 ~ 0.8 millimeter, such benefit is, settling can rest in the gap of reticulate pattern 112, in sputter procedure, sputtered atom is not easy to have influence on the settling in reticulate pattern 112, further avoid the settling generation peeling phenomenon of absorption on cylinder 111.
With reference to figure 9, perform S24 step by step, remove part tantalum rod 10, remaining tantalum rod 10 and cylinder 111 form described connection section 110.Wherein, remaining part tantalum rod 10 becomes the annular boss 114 of described connection section 110, and described connection section 110 is by welding described annular boss 114 with described ring, thus being fixedly connected with of realization and ring.
It should be noted that, below be only the part steps forming described connection section 110 step by step, in actual mechanical process, also will be formed as other necessary structures such as threaded holes on described connection section 110, these steps are the conventional steps of this area, and the present invention does not repeat this.
Perform step S3, some described connection sections 110 are fixed in described ring.The quantity being installed on the connection section 110 in described ring in the present embodiment is 7, but the present invention is not limited in any way this, and according to the size of actual ring, the installation quantity of described connection section 110 can also as be 5 other quantity such as grade.
It should be noted that in addition, present method can be, but not limited to form above-mentioned ring structure.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (17)
1. a ring structure, is characterized in that, comprising:
Ring;
Be fixed on the some columned connection section in described ring, the sidewall of described connection section is provided with the reticulate pattern of annular knurl formation.
2. ring structure as claimed in claim 1, it is characterized in that, the material of described ring and connection section is tantalum.
3. ring structure as claimed in claim 1, is characterized in that, for being welded to connect between described ring and connection section.
4. ring structure as claimed in claim 1, it is characterized in that, the roughness of described reticulate pattern is in the scope of 10 ~ 65 microns.
5. ring structure as claimed in claim 1, it is characterized in that, the degree of depth of described reticulate pattern is in the scope of 0.1 ~ 0.8 millimeter.
6. ring structure as claimed in claim 1, is characterized in that, described reticulate pattern is the rhombus reticulate pattern that cross one another groove is formed.
7. the ring structure as described in claim 1 or 6, is characterized in that, the density degree of described reticulate pattern is in the scope of 25 ~ 80TPI.
8. a manufacture method for ring structure, is characterized in that, comprising:
Ring is provided;
Form columned connection section, the sidewall of described connection section is formed with reticulate pattern;
Some described connection sections are fixed in described ring.
9. manufacture method as claimed in claim 8, is characterized in that, provide the step of ring to comprise: to provide tantalum ring.
10. manufacture method as claimed in claim 8, is characterized in that, provide the step of connection section to comprise: to provide tantalum connection section.
11. manufacture method as claimed in claim 8, is characterized in that, the step forming connection section comprises:
Tantalum rod is provided;
Remove the portion of material of the end of described tantalum rod, to form the cylinder that diameter is less than tantalum rod in the end of described tantalum rod;
Annular knurl process is carried out to described cylinder, to form described reticulate pattern at the sidewall of cylinder;
Remove part tantalum rod, remaining tantalum rod and cylinder form described connection section.
12. manufacture method as claimed in claim 11, it is characterized in that, the step of carrying out annular knurl process comprises:
Make the roughness of the reticulate pattern of formation in the scope of 10 ~ 65 microns.
13. manufacture method as claimed in claim 11, it is characterized in that, the step of carrying out annular knurl process comprises:
Make the degree of depth of the reticulate pattern of formation in the scope of 0.1 ~ 0.8 millimeter.
14. manufacture method as claimed in claim 11, it is characterized in that, the step of carrying out annular knurl process comprises:
The annular knurl amount of pressure drop of annular knurl process is in the scope of 0.4 ~ 1.0 millimeter.
15. manufacture method as claimed in claim 11, it is characterized in that, the step of carrying out annular knurl process comprises:
On the sidewall of cylinder, form cross one another groove by annular knurl process, the reticulate pattern of formation is assumed diamond in shape.
16.. manufacture method as claimed in claim 15, it is characterized in that, the degree of depth of the described reticulate pattern assumed diamond in shape is in the scope of 0.1 ~ 0.8 millimeter.
17. manufacture method as claimed in claim 8, it is characterized in that, step connection section being fixed on ring comprises: be fixed in described ring by described connection section by the mode of welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310755011.6A CN104746021A (en) | 2013-12-31 | 2013-12-31 | Ring piece structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310755011.6A CN104746021A (en) | 2013-12-31 | 2013-12-31 | Ring piece structure and manufacturing method thereof |
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| CN104746021A true CN104746021A (en) | 2015-07-01 |
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| CN201310755011.6A Pending CN104746021A (en) | 2013-12-31 | 2013-12-31 | Ring piece structure and manufacturing method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| CN107541706A (en) * | 2016-06-29 | 2018-01-05 | 宁波江丰电子材料股份有限公司 | Knurled wheel and rose work method |
| CN107910257A (en) * | 2017-11-15 | 2018-04-13 | 上海华力微电子有限公司 | The process adjustments structures and methods of the process cavity of PVD equipment |
| CN106475728B (en) * | 2015-08-24 | 2018-05-18 | 宁波江丰电子材料股份有限公司 | A kind of repairing and reusing method of column handle on tantalum ring |
| CN108149204A (en) * | 2016-12-05 | 2018-06-12 | 宁波江丰电子材料股份有限公司 | The ring structure of long-life |
| CN109277771A (en) * | 2017-07-19 | 2019-01-29 | 宁波江丰电子材料股份有限公司 | Sputter ring umbo body rose work method |
| CN109290931A (en) * | 2018-10-19 | 2019-02-01 | 宁波江丰电子材料股份有限公司 | Tantalum ring knurled surface roughness control method |
| CN112958997A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for repairing and recycling 80TPI tantalum ring piece |
| CN113560825A (en) * | 2021-07-30 | 2021-10-29 | 宁波江丰电子材料股份有限公司 | Semiconductor sputtering ring protection piece and processing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106475728B (en) * | 2015-08-24 | 2018-05-18 | 宁波江丰电子材料股份有限公司 | A kind of repairing and reusing method of column handle on tantalum ring |
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| CN107910257A (en) * | 2017-11-15 | 2018-04-13 | 上海华力微电子有限公司 | The process adjustments structures and methods of the process cavity of PVD equipment |
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| CN109290931A (en) * | 2018-10-19 | 2019-02-01 | 宁波江丰电子材料股份有限公司 | Tantalum ring knurled surface roughness control method |
| CN112958997A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for repairing and recycling 80TPI tantalum ring piece |
| CN113560825A (en) * | 2021-07-30 | 2021-10-29 | 宁波江丰电子材料股份有限公司 | Semiconductor sputtering ring protection piece and processing method thereof |
| CN113560825B (en) * | 2021-07-30 | 2022-07-15 | 宁波江丰电子材料股份有限公司 | Semiconductor sputtering ring protection piece and processing method thereof |
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Application publication date: 20150701 |