CN104744041A - Temperature stable type microwave dielectric ceramic Li2Cu2Nb8O23 with low dielectric constant - Google Patents

Temperature stable type microwave dielectric ceramic Li2Cu2Nb8O23 with low dielectric constant Download PDF

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Publication number
CN104744041A
CN104744041A CN201510135625.3A CN201510135625A CN104744041A CN 104744041 A CN104744041 A CN 104744041A CN 201510135625 A CN201510135625 A CN 201510135625A CN 104744041 A CN104744041 A CN 104744041A
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dielectric ceramic
ceramic
microwave dielectric
dielectric constant
microwave
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陈进武
李纯纯
苏和平
方亮
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses a temperature stable type microwave dielectric ceramic Li2Cu2Nb8O23 with low dielectric constant and a preparation method thereof. The method comprises the following steps: (1) weighing and dosing the original Li2CO3, CuO and Nb2O5 powders with the purity of 99.9% (weight percentage) according to the composition of Li2Cu2Nb8O23; (2) performing wet type ball milling on the raw materials prepared by the step (1) for 12h, wherein the ball milling medium is absolute ethyl alcohol, baking and pre-burning for 6h at the atmosphere of 850 DEG C; (3) adding a bonder into the powders prepared by the step (2) and granulating, performing compression moulding and burning for 4h at the atmosphere of 900-950 DEG C, wherein the bonder is 5% of polyvinyl alcohol solution and the adding amount of the polyvinyl alcohol is 3% of the total powder weight. The ceramic prepared by the invention is excellently sintered, the dielectric constant is 23.2-23.9, the quality factor Qf value is 101000-137000 GHz, the resonant frequency temperature coefficient is small and the ceramic has a huge industrial application value.

Description

Temperature-stable dielectric constant microwave dielectric ceramic Li 2cu 2nb 8o 23
Technical field
The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO 2microwave dielectric filter, but its temperature coefficient of resonance frequency τ ?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=20 ~ 35, Q=(1 ~ 2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 45, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
Due to three performance index (ε of microwave dielectric ceramic rwith Qf and τ ?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet the single-phase microwave-medium ceramics of three performance requriementss considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, explore with exploitation near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the serial differing dielectric constant microwave dielectric ceramic of higher figure of merit, which greatly limits the development of microwave dielectric ceramic and device.We are to composition Li 2ni 2nb 8o 23, Li 2mn 2nb 8o 23, Li 2fe 2nb 8o 23series compound carried out the research of microwave dielectric property, but their temperature factor is all bigger than normal and cannot can Temperature Firing Microwave Dielectric Ceramics as practical.
Summary of the invention
The object of this invention is to provide one and there is good thermal stability and low-loss dielectric constant microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is Li 2cu 2nb 8o 23.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, CuO and Nb 2o 5starting powder press Li 2cu 2nb 8o 23composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is dehydrated alcohol, pre-burning 6 hours in 850 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 900 ~ 950 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
Advantage of the present invention: Li 2cu 2nb 8o 23pottery sintering below 950 DEG C is good, and specific inductivity reaches 23.2 ~ 23.9, especially the temperature factor τ of resonant frequency ?little, temperature stability is good; Quality factor q f value, up to 101000-137000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. a low-loss temperature-stabilized dielectric constant microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: Li 2cu 2nb 8o 23;
Preparation method's step of described microwave dielectric ceramic is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, CuO and Nb 2o 5starting powder press Li 2cu 2nb 8o 23composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 850 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 900 ~ 950 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
CN201510135625.3A 2015-03-26 2015-03-26 Temperature stable type microwave dielectric ceramic Li2Cu2Nb8O23 with low dielectric constant Pending CN104744041A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105236973A (en) * 2015-10-18 2016-01-13 桂林理工大学 Low temperature sinterable temperature stable ultralow dielectric constant microwave dielectric ceramic LiCuGdV2O8
CN105294076A (en) * 2015-11-30 2016-02-03 桂林理工大学 High-quality-factor temperature-stable low-dielectric-constant microwave dielectric ceramic LiNbGeO5 and preparation method thereof
CN105859277A (en) * 2016-06-18 2016-08-17 桂林理工大学 High-quality-factor microwave dielectric ceramic Li2Cu3V2O9 which can be sintered at low temperature and preparation method thereof
CN106278237A (en) * 2016-07-23 2017-01-04 桂林理工大学 Temperature-stable dielectric constant microwave dielectric ceramic LiBi3sn2o9

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003719A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof
CN104003723A (en) * 2014-05-24 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li3Zn4NbO8 capable of realizing low-temperature sintering and preparation method thereof
CN104446473A (en) * 2014-12-27 2015-03-25 桂林理工大学 Temperature-stable microwave dielectric ceramics with ultralow loss and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003719A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof
CN104003723A (en) * 2014-05-24 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li3Zn4NbO8 capable of realizing low-temperature sintering and preparation method thereof
CN104446473A (en) * 2014-12-27 2015-03-25 桂林理工大学 Temperature-stable microwave dielectric ceramics with ultralow loss and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105236973A (en) * 2015-10-18 2016-01-13 桂林理工大学 Low temperature sinterable temperature stable ultralow dielectric constant microwave dielectric ceramic LiCuGdV2O8
CN105294076A (en) * 2015-11-30 2016-02-03 桂林理工大学 High-quality-factor temperature-stable low-dielectric-constant microwave dielectric ceramic LiNbGeO5 and preparation method thereof
CN105859277A (en) * 2016-06-18 2016-08-17 桂林理工大学 High-quality-factor microwave dielectric ceramic Li2Cu3V2O9 which can be sintered at low temperature and preparation method thereof
CN106278237A (en) * 2016-07-23 2017-01-04 桂林理工大学 Temperature-stable dielectric constant microwave dielectric ceramic LiBi3sn2o9

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Application publication date: 20150701