Background technology
Microwave dielectric ceramic refers to and is applied in microwave frequency band (being mainly UHF and SHF frequency range) circuit as dielectric material and completes the pottery of one or more functions, in modern communication, be widely used as the components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop, it is the key foundation material of modern communication technology, there is very important application at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT ε
rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency
?the thermostability to ensure that device has had close to zero as far as possible, general requirement-10/ DEG C≤τ
?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative permittivity ε
rsize from use frequency range different, conventionally the microwave-medium ceramics being developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2o
3-TiO
2, Y
2baCuO
5, MgAl
2o
4and Mg
2siO
4deng, its ε
r≤ 20, quality factor q × f>=50000GHz, τ
?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rwith the microwave dielectric ceramic of high Q value, be mainly BaO-MgO-Ta
2o
5, BaO-ZnO-Ta
2o
5or BaO-MgO-Nb
2o
5, BaO-ZnO-Nb
2o
5system or the composite system MWDC material between them.Its ε
r=25~30, Q=(1~2) × 10
4(under the GHz of f>=10), τ
?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε
rwith the microwave dielectric ceramic of Q value, be mainly with BaTi
4o
9, Ba
2ti
9o
20(Zr, Sn) TiO
4deng the MWDC material that is base, its ε
r=35 ~ 40, Q=(6~9) × 10
3(under f=3~-4GHz), τ
?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4~8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε
rand the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession
2o
3-TiO
2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2o-Ln
2o
3-TiO
2series, lead base series material, Ca
1-xln
2x/3tiO
3be contour ε
rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2o
3-TiO
2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not be directly and the low melting point metal such as Ag and Cu burn altogether formation laminated ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly to adopt devitrified glass or glass-ceramic composite system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore developing without the low fired microwave dielectric ceramic material of glassy phase is the emphasis of current research.
Explore with development of new can the process of low fired microwave dielectric ceramic materials in, the material systems such as Li based compound, Bi based compound, tungstate architecture compound and tellurate architecture compound that intrinsic sintering temperature is low get the attention and study, but the subject matter existing is, the temperature coefficient of resonance frequency of the single-phase microwave dielectric ceramic material of low temperature sintering of most open reports is all bigger than normal, cannot ensure the thermostability that device has had; And also cannot predict by existing theory or technology up to now the τ of monophase materials
?value, this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
We are to consisting of LiTi
2v
3o
12new compound carried out sintering characteristic and Study on microwave dielectric property, found that such pottery have excellent comprehensive microwave dielectric property simultaneously sintering temperature lower than 700
°c, can realize low temperature co-fired with Ag, can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the needs of low temperature co-fired technology and microwave multilayer device.
Summary of the invention
The object of this invention is to provide a kind of Heat stability is good and low-loss, and can low sintering microwave dielectric ceramic material and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic material of the present invention is LiTi
2v
3o
12.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be more than 99.9% Li by purity
2cO
3, TiO
2and V
2o
5starting powder press LiTi
2v
3o
12chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 600 DEG C of air atmosphere after oven dry.
(3) in the powder making in step (2), add after binding agent granulation, then compression moulding, finally sintering 4 hours in 650 ~ 680 DEG C of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
Of the present invention
useful technique effectbe: the claimed ceramic sintering temperature of the present invention is low, the temperature factor τ of its resonant frequency
?close to zero, can meet the heat-staple requirement of device; Specific inductivity reaches 25~26, quality factor q f value is up to 64000-87000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the Technology Need of low temperature co-fired technology and microwave multilayer device, have a great using value industrial.