CN104003721A - Microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and preparation method thereof - Google Patents

Microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and preparation method thereof Download PDF

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CN104003721A
CN104003721A CN201410207782.6A CN201410207782A CN104003721A CN 104003721 A CN104003721 A CN 104003721A CN 201410207782 A CN201410207782 A CN 201410207782A CN 104003721 A CN104003721 A CN 104003721A
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dielectric ceramic
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powder
microwave dielectric
preparation
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CN104003721B (en
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陈进武
方亮
唐莹
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Shandong Xingqiang Chemical Industry Technology Research Institute Co., Ltd
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Guilin University of Technology
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Abstract

The invention discloses temperature stable microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and a preparation method thereof; and the preparation method comprises the following steps: (1) weighing for batching Li2CO3, WO3 and ZnO original powder with the purity of more than 99.9% according to the chemical formula Li2W2Zn3O10; (2) mixing the raw materials of the steps (1) by wet ball milling for 12 hours with a milling medium being distilled water, drying, then presintering at 620 DEG C in air atmosphere for 6 hours; (3) adding a binder into the powder prepared in the step (2), granulating, then pressing for forming, and finally sintering at 670-700 DEG C in the air atmosphere for 4 hours; the binder is a polyvinyl alcohol solution with the mass concentration of 5%, and added polyvinyl alcohol accounts for 3% of the total mass of the powder. The prepared dielectric ceramic Li2W2Zn3O10 is low in sintering temperature, less in temperature coefficient of resonance frequency, and good in temperature stability, the dielectric constant reaches to 21-22, the quality factor Qf value reaches as high as 74000-97000GHz, and the dielectric ceramic Li2W2Zn3O10 has great application value in industry.

Description

Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to the microwave device such as medium substrate, resonator and wave filter using in microwave frequency, and the dielectric ceramic material of ceramic condenser or thermo-compensation capacitor and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and is applied in microwave frequency band (being mainly UHF and SHF frequency range) circuit as dielectric material and completes the pottery of one or more functions, in modern communication, be widely used as the components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop, it is the key foundation material of modern communication technology, there is very important application at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?the thermostability to ensure that device has had close to zero as far as possible, general requirement-10/ DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative permittivity ε rsize from use frequency range different, conventionally the microwave-medium ceramics being developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high Q value, be mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=25~30, Q=(1~2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, be mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material that is base, its ε r=35 ~ 40, Q=(6~9) × 10 3(under f=3~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4~8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not be directly and the low melting point metal such as Ag and Cu burn altogether formation laminated ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly to adopt devitrified glass or glass-ceramic composite system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore developing without the low fired microwave dielectric ceramic material of glassy phase is the emphasis of current research.
Explore with development of new can the process of low fired microwave dielectric ceramic materials in, the material systems such as Li based compound, Bi based compound, tungstate architecture compound and tellurate architecture compound that intrinsic sintering temperature is low get the attention and study, but the subject matter existing is, the temperature coefficient of resonance frequency of the single-phase microwave dielectric ceramic material of low temperature sintering of most open reports is all bigger than normal, cannot ensure the thermostability that device has had; And also cannot predict by existing theory or technology up to now the τ of monophase materials ?value, this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
We are to consisting of Li 2w 2zn 3o 10new compound carried out sintering characteristic and Study on microwave dielectric property, found that such pottery have excellent comprehensive microwave dielectric property simultaneously sintering temperature lower than 700 °c, can realize low temperature co-fired with Ag, can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the needs of low temperature co-fired technology and microwave multilayer device.
 
Summary of the invention
The object of this invention is to provide a kind of Heat stability is good and low-loss, and can low sintering microwave dielectric ceramic material and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic material of the present invention is Li 2w 2zn 3o 10.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be more than 99.9% Li by purity 2cO 3, WO 3press Li with the starting powder of ZnO 2w 2zn 3o 10chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry.
(3) in the powder making in step (2), add after binding agent granulation, then compression moulding, finally sintering 4 hours in 670 ~ 700 DEG C of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
Of the present invention useful technique effectbe: the claimed ceramic sintering temperature of the present invention is low, can meet the Technology Need of low temperature co-fired technology and microwave multilayer device; The temperature factor τ of its resonant frequency ?close to zero, can meet the heat-staple requirement of device; Specific inductivity reaches 21~22, and quality factor q f value, up to 74000-97000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, has a great using value industrial.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof that form different sintering temperatures of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.Just Li 2w 2zn 3o 10powder mixes with the Ag powder that accounts for powder quality 20%, after compression moulding, sintering 4 hours at 700 DEG C;
X ray diffraction material phase analysis and scanning electron microscopic observation all show Li 2w 2zn 3o 10there is not chemical reaction, i.e. Li with Ag 2w 2zn 3o 10can be low temperature co-fired with Ag electrode.This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the Technology Need of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. a low temperature sintering microwave dielectric ceramic, is characterized in that the chemical constitution formula of described microwave dielectric ceramic is: Li 2w 2zn 3o 10;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be more than 99.9% Li by purity 2cO 3, WO 3press Li with the starting powder of ZnO 2w 2zn 3o 10chemical formula weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry;
(3) in the powder making in step (2), add after binding agent granulation, then compression moulding, finally sintering 4 hours in 670 ~ 700 DEG C of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104230340A (en) * 2014-09-21 2014-12-24 桂林理工大学 Microwave dielectric ceramic Ba5ZnW3O15 with low dielectric constant and capacity of low temperature sintering
CN104311008A (en) * 2014-10-01 2015-01-28 桂林理工大学 Temperature-stable medium-dielectric constant microwave dielectric ceramic BaNb4V2O16 and preparation method thereof
CN104311028A (en) * 2014-10-22 2015-01-28 桂林理工大学 Microwave dielectric ceramic Li3NdWO6 with ultralow dielectric constant and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798220A (en) * 2010-03-24 2010-08-11 桂林理工大学 Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103121843A (en) * 2013-03-25 2013-05-29 桂林理工大学 Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof
CN103159477A (en) * 2013-04-02 2013-06-19 桂林理工大学 Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798220A (en) * 2010-03-24 2010-08-11 桂林理工大学 Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103121843A (en) * 2013-03-25 2013-05-29 桂林理工大学 Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof
CN103159477A (en) * 2013-04-02 2013-06-19 桂林理工大学 Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104230340A (en) * 2014-09-21 2014-12-24 桂林理工大学 Microwave dielectric ceramic Ba5ZnW3O15 with low dielectric constant and capacity of low temperature sintering
CN104230340B (en) * 2014-09-21 2016-03-02 桂林理工大学 Low temperature sintering dielectric constant microwave ceramic medium Ba 5znW 3o 15
CN104311008A (en) * 2014-10-01 2015-01-28 桂林理工大学 Temperature-stable medium-dielectric constant microwave dielectric ceramic BaNb4V2O16 and preparation method thereof
CN104311028A (en) * 2014-10-22 2015-01-28 桂林理工大学 Microwave dielectric ceramic Li3NdWO6 with ultralow dielectric constant and preparation method thereof

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