CN104311008A - Temperature-stable medium-dielectric constant microwave dielectric ceramic BaNb4V2O16 and preparation method thereof - Google Patents

Temperature-stable medium-dielectric constant microwave dielectric ceramic BaNb4V2O16 and preparation method thereof Download PDF

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CN104311008A
CN104311008A CN201410518229.4A CN201410518229A CN104311008A CN 104311008 A CN104311008 A CN 104311008A CN 201410518229 A CN201410518229 A CN 201410518229A CN 104311008 A CN104311008 A CN 104311008A
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dielectric ceramic
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ceramic
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CN104311008B (en
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相怀成
李纯纯
苏和平
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Jiangsu zhuoken Intellectual Property Operation Co.,Ltd.
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Guilin University of Technology
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Abstract

The invention discloses a temperature-stable medium-dielectric constant microwave dielectric ceramic BaNb4V2O16 capable of being sintered at a low temperature and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and proportioning raw material powder, namely BaCO3, Nb2O5 and V2O5 with the purity of above 99.9% (in percentage by weight) according to the composition of BaNb4V2O16; (2) performing wet ball milling and mixing on raw materials obtained in the step (1) for 12h, wherein a ball milling medium is distilled water; drying and pre-burning in an air atmosphere at the temperature of 800 DEG C for 6h; (3) adding a binder into the powder prepared in step (2), granulating, further pressing for forming and finally sintering in the air atmosphere at the temperature of 850-900 DEG C for 4h, wherein the binder adopts a polyvinyl alcohol solution with the mass concentration of 5% and the adding amount of polyvinyl alcohol accounts for 3% of total mass of the powder. The ceramic prepared by the preparation method disclosed by the invention can be well sintered at the temperature of 850-900 DEG C, a dielectric constant reaches 41.4-43.3, a quality factor Qf value is up to 51000-68000GHz, a resonant frequency temperature coefficient is small, and the ceramic has very high application value in industry.

Description

Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic BaNb 4v 2o 16and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, dielectric ceramic material particularly relating to Ceramic Resonator and the microwave device such as wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO 2microwave dielectric filter, but its temperature coefficient of resonance frequency τ ?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=20 ~ 35, Q=(1 ~ 2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 45, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic rwith Qf and τ ?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot production application.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Explore with exploitation can low-temperature sintering have simultaneously near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.
Summary of the invention
The object of this invention is to provide and a kind of there is good thermostability and low-loss, simultaneously low temperature sintering medium dielectric constant microwave medium microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is BaNb 4v 2o 16.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than BaCO 3, Nb 2o 5and V 2o 5starting powder press BaNb 4v 2o 16composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Advantage of the present invention: BaNb 4v 2o 16ceramic sintering temperature is low, good at 850 ~ 900 DEG C of sintering; Specific inductivity reaches 41.4 ~ 43.3, the temperature factor τ of its resonant frequency ?little, temperature stability is good; Its quality factor q f value, up to 51000-68000GHz, can be widely used in the manufacture of the microwave devices such as various dielectric resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. a low temperature sintering temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: BaNb 4v 2o 16;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be 99.9%(weight percent by purity) more than BaCO 3, Nb 2o 5and V 2o 5starting powder press BaNb 4v 2o 16composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104944950A (en) * 2015-05-23 2015-09-30 桂林理工大学 High-quality-factor low-dielectric-constant microwave dielectric ceramic BaLi2Zn2V8O24
CN105110768A (en) * 2015-09-20 2015-12-02 桂林理工大学 Middle-dielectric-constant microwave dielectric ceramic Ba3Li3Bi2Sb5O20 and preparation method thereof
CN105218086A (en) * 2015-10-09 2016-01-06 桂林理工大学 Dielectric constant microwave dielectric ceramic BaLi 3znBi 5o 11and preparation method thereof
CN105218084A (en) * 2015-10-07 2016-01-06 桂林理工大学 Dielectric constant microwave dielectric ceramic Li 4ba 2biV 3o 13and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003721A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and preparation method thereof
CN104003719A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003721A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and preparation method thereof
CN104003719A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104944950A (en) * 2015-05-23 2015-09-30 桂林理工大学 High-quality-factor low-dielectric-constant microwave dielectric ceramic BaLi2Zn2V8O24
CN105110768A (en) * 2015-09-20 2015-12-02 桂林理工大学 Middle-dielectric-constant microwave dielectric ceramic Ba3Li3Bi2Sb5O20 and preparation method thereof
CN105218084A (en) * 2015-10-07 2016-01-06 桂林理工大学 Dielectric constant microwave dielectric ceramic Li 4ba 2biV 3o 13and preparation method thereof
CN105218086A (en) * 2015-10-09 2016-01-06 桂林理工大学 Dielectric constant microwave dielectric ceramic BaLi 3znBi 5o 11and preparation method thereof

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