CN104370528A

CN104370528A - Ultralow-dielectric-constant microwave dielectric ceramic Ba2LiB5O10 and preparation method thereof

Info

Publication number: CN104370528A
Application number: CN201410627165.1A
Authority: CN
Inventors: 方维双; 唐莹; 苏和平
Original assignee: Guilin University of Technology
Current assignee: Guilin University of Technology
Priority date: 2014-11-10
Filing date: 2014-11-10
Publication date: 2015-02-25

Abstract

The invention discloses a low-temperature-sintering stable-temperature ultralow-dielectric-constant microwave dielectric ceramic Ba2LiB5O10 and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and proportioning BaCO3, Li2CO3 and H3BO3 original powders with the purity of higher than 99.9 wt% according to the composition of the Ba2LiB5O10; (2) carrying out wet ball milling mixing on the raw materials in the step (1) for 12 hours by using anhydrous ethanol as a ball milling medium, drying, and presintering in a 500 DEG C atmospheric atmosphere for 12 hours; and (3) adding an adhesive into the powder prepared in the step (2), granulating, compacting, and finally, sintering in an 850-900 DEG C atmospheric atmosphere for 10 hours, wherein the adhesive adopts a 5 wt% polyvinyl alcohol solution, and the addition amount of the polyvinyl alcohol is 3% of the total mass of the powder. The ceramic has favorable sintering property, the dielectric constant reaches 7.1-7.6, the quality factor Qf value is up to 95000-123000 GHz, the temperature coefficient of resonance frequency is small, and the ceramic has great application value in industry.

Description

Ultralow dielectric microwave dielectric ceramic Ba 2liB 5o 10and preparation method thereof

Technical field

The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.

Background technology

Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.

Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε _rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency _?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ _?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO ₂microwave dielectric filter, but its temperature coefficient of resonance frequency τ _?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε _rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.

(1) ultralow dielectric microwave dielectric ceramic, main representative is Al ₂o ₃-TiO ₂, Y ₂baCuO ₅, MgAl ₂o ₄and Mg ₂siO ₄deng, its ε _r≤ 20, quality factor q × f>=50000GHz, τ _?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.

(2) low ε _rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta ₂o ₅, BaO-ZnO-Ta ₂o ₅or BaO-MgO-Nb ₂o ₅, BaO-ZnO-Nb ₂o ₅system or the composite system MWDC material between them.Its ε _r=20 ~ 35, Q=(1 ~ 2) × 10 ⁴(under the GHz of f>=10), τ _?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.

(3) medium ε _rwith the microwave dielectric ceramic of Q value, mainly with BaTi ₄o ₉, Ba ₂ti ₉o ₂₀(Zr, Sn) TiO ₄deng the MWDC material for base, its ε _r=35 ~ 45, Q=(6 ~ 9) × 10 ³(under f=3 ~-4GHz), τ _?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.

(4) high ε _rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln ₂o ₃-TiO ₂series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li ₂o-Ln ₂o ₃-TiO ₂series, lead base series material, Ca _1-xln _2x/3tiO ₃be contour ε _rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system ₂o ₃-TiO ₂material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO ₃specific inductivity reaches 105.

Due to three performance index (ε of microwave dielectric ceramic _rwith Qf and τ _?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet the single-phase microwave-medium ceramics of three performance requriementss considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, explore with exploitation near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ _?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the serial differing dielectric constant microwave dielectric ceramic of higher figure of merit, which greatly limits the development of microwave dielectric ceramic and device.

Summary of the invention

The object of this invention is to provide one and there is good thermal stability and low-loss ultralow dielectric microwave dielectric ceramic material and preparation method thereof.

The chemical constitution of microwave dielectric ceramic material of the present invention is Ba ₂liB ₅o ₁₀.

Preparation method's step of this microwave dielectric ceramic material is:

(1) be 99.9%(weight percent by purity) more than BaCO ₃, Li ₂cO ₃and H ₃bO ₃starting powder press Ba ₂liB ₅o ₁₀composition weigh batching.

(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is dehydrated alcohol, pre-burning 12 hours in 500 DEG C of air atmosphere after oven dry.

(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 10 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.

Advantage of the present invention: Ba ₂liB ₅o ₁₀ceramic sintering temperature is low, and specific inductivity reaches 7.1 ~ 7.6, the temperature factor τ of its resonant frequency _?little, temperature stability is good; Quality factor q f value, up to 95000-123000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.

Embodiment

Embodiment:

Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.

This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.

Table 1:

Claims

1. borate is as an application for low temperature sintering temperature-stable ultralow dielectric microwave dielectric ceramic, it is characterized in that described boratory chemical constitution is: Ba ₂liB ₅o ₁₀;

Preparation method's concrete steps of described borate microwave dielectric ceramic are:

(1) be 99.9%(weight percent by purity) more than BaCO ₃, Li ₂cO ₃and H ₃bO ₃starting powder press Ba ₂liB ₅o ₁₀composition weigh batching;

(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is dehydrated alcohol, 500 DEG C of pre-burnings 12 hours after oven dry;