CN104736497A - Oxide sintered body, oxide sputtering target and conductive oxide thin film with high refractive index, and method for producing oxide sintered body - Google Patents

Oxide sintered body, oxide sputtering target and conductive oxide thin film with high refractive index, and method for producing oxide sintered body Download PDF

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CN104736497A
CN104736497A CN201480001634.7A CN201480001634A CN104736497A CN 104736497 A CN104736497 A CN 104736497A CN 201480001634 A CN201480001634 A CN 201480001634A CN 104736497 A CN104736497 A CN 104736497A
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film
convert
powder
sintered compact
oxide
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CN104736497B (en
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奈良淳史
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JX Nippon Mining and Metals Corp
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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Abstract

A sintered body which is composed of indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn), and oxygen (O), which comprises 2 to 65 mol% of In as In2O3 and 2 to 65 mol% of Ti or Cr as TiO2 or Cr2O3 respectively, and which when an atom ratio of In is A (at%), atom ratio of Ti or Cr is B (at%), and atom ratio of Zn or Sn is C (at%), satisfies 0.5<=A/B<=5 and 0<C/(A+B)<10. A transparent thin film with a high refractive index can be formed which has a low bulk resistance and is capable of DC sputtering.

Description

The electroconductive oxide film of oxidate sintered body, oxide sputtering target and high refractive index and the manufacture method of oxidate sintered body
Technical field
The present invention relates to the electroconductive oxide film of an oxide sintered body, oxide sputtering target and high refractive index and the manufacture method of oxidate sintered body, especially relate to body resistance low, can the sinter sputtering target of DC sputtering and the high refractive index film that uses this sputtering target to make.
Background technology
In the various optics such as indicating meter, contact panel, when utilizing visible ray, needing the material used to be transparent, particularly in the whole region of visible region, expecting that there is high-transmission rate.In addition, in various optics, there is the light loss caused by the refringence of the interface of the mould material formed and substrate sometimes, as the method improving these light losses, having the method for the optical adjustment film introduced for regulating specific refractory power, blooming.Specific refractory power required by optical adjustment film is different according to the structure of various device, therefore needs the specific refractory power with wide region.In addition, according to use occasion, sometimes also require electroconductibility.
Usually used as transparent and there is the material of electroconductibility, known ITO (indium oxide-tin oxide), IZO (Indium sesquioxide-zinc oxide), GZO (gallium oxide/zinc oxide), AZO (alumina-silica zinc) etc. (patent documentation 1 ~ 3).But, the specific refractory power of these materials under wavelength 550nm, in the scope of about 1.95 ~ about 2.05, can not use as the high-index material (n > 2.05) of optical adjustment and low-index material (n < 1.95).In addition, for ITO, Problems existing is, in order to improve transmissivity, and the heated substrates when film forming, or after film forming, need annealing, be difficult to use in the plastic base, organic EL device purposes etc. that can not heat.In addition, for IZO, Problems existing is, has absorption at short wavelength side, therefore can become the film with yellow.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2007-008780 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2009-184876 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2007-238375 publication
Summary of the invention
Invent problem to be solved
Problem of the present invention is to provide a kind of sintered compact that can obtain realizing the high-transmission rate of visible ray and the conductive membrane of high refractive index.The transmissivity of this film is high and specific refractory power is high, is therefore useful as the optics such as indicating meter, touch panel film, especially optical adjustment film.In addition, problem of the present invention be to provide that a kind of relative density is high, body resistance is low, can the sputtering target of DC sputtering.The object of the invention is to the characteristic of raising optics, reduce equipment cost, significantly improve film forming characteristics.
For the means of dealing with problems
In order to solve the above problems, the present inventor etc. conduct in-depth research, found that, by adopting the material system of following proposition, can high-transmission rate be obtained and the conductive membrane of high refractive index, good optical characteristics can be guaranteed, and then stably film forming can be sputtered by DC, the characteristic of the optics using this film can be improved, and can boost productivity.
The present invention is based on this discovery, following invention is provided.
The invention provides:
1) sintered compact, is characterized in that, comprises indium (In) and titanium (Ti) or chromium (Cr) and zinc (Zn) or tin (Sn) and oxygen (O); With In 2o 3convert containing 2 ~ 65 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 2 ~ 65 % by mole of Ti or Cr; The atomic ratio of In is set to A (atom %), the atomic ratio of Ti or Cr is set to B (atom %), when the atomic ratio of Zn or Sn being set to C (atom %), 0.5≤A/B≤5,0 < C/ (A+B) < 10.
2) as above-mentioned 1) as described in sintered compact, it is characterized in that, with In 2o 3convert containing 2 ~ 30 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 3 ~ 30 % by mole of Ti or Cr, convert or SnO with ZnO respectively 2convert Zn or Sn containing more than 40 % by mole.
3) as above-mentioned 1) or 2) as described in sintered compact, it is characterized in that, 0 < C/ (A+B) < 5.
4) as above-mentioned 1) ~ 3) according to any one of sintered compact, it is characterized in that, relative density is more than 90%.
5) as above-mentioned 1) ~ 4) according to any one of sintered compact, it is characterized in that, body resistance is 10 below Ω cm.
6) film, is characterized in that, comprises indium (In) and titanium (Ti) or chromium (Cr) and zinc (Zn) or tin (Sn) and oxygen (O); With In 2o 3convert containing 2 ~ 65 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 2 ~ 65 % by mole of Ti or Cr; The atomic ratio of In is set to A (atom %), the atomic ratio of Ti or Cr is set to B (atom %), when the atomic ratio of Zn or Sn being set to C (atom %), 0.5≤A/B≤5,0 < C/ (A+B) < 10.
7) as above-mentioned 6) as described in film, it is characterized in that, the specific refractory power under wavelength 550nm is more than 2.05.
8) as above-mentioned 6) or 7) as described in film, it is characterized in that, the optical extinction coefficient under wavelength 450nm is less than 0.05.
9) as above-mentioned 6) ~ 8) according to any one of film, it is characterized in that, ratio resistance is 1M below Ω cm.
10) a kind of manufacture method of sintered compact, it is manufacture above-mentioned 1) ~ 5) according to any one of the method for sintered compact, it is characterized in that, by raw material powder under rare gas element or vacuum environment, more than 900 DEG C and less than 1500 DEG C pressure sinterings, or by raw material powder press forming, then by this molding under rare gas element or vacuum environment, more than 1000 DEG C and less than 1500 DEG C normal pressure-sintered.
Invention effect
According to the present invention, by adopting above-mentioned shown material system, can high-transmission rate be obtained and the conductive film of high refractive index, and desired optical characteristics can be guaranteed.In addition, the present invention has following excellent results: improving the characteristic of various optics, reducing equipment cost, significantly improving productivity by improving film forming speed.
Embodiment
The invention is characterized in, comprise indium (In) and titanium (Ti) or chromium (Cr) and zinc (Zn) or tin (Sn) and oxygen (O); With In 2o 3convert containing 2 ~ 65 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 2 ~ 65 % by mole of Ti or Cr; The atomic ratio of In is set to A (atom %), the atomic ratio of Ti or Cr is set to B (atom %), when the atomic ratio of Zn or Sn being set to C (atom %), 0.5≤A/B≤5,0 < C/ (A+B) < 10.Can obtain there is high-transmission rate and the conductive film of high refractive index thus.
In addition, material of the present invention with indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn) and oxygen (O) for constitution element, but can also inevitable impurity be contained within this material.
Material system of the present invention comprises by formula: M 1m 2o 3(M 3o) m(M 1: the first composition, M 2: the second composition, M 3: the natural number of the 3rd composition, more than m:1) homologous compound that represents, it is the material that can become homologue structure, and as high-index material, can enumerate: In or Fe in the first composition, Ti, Cr, In, Fe or Sn in second composition, Zn, Sn, Cu, Mn, Fe or Co in the 3rd composition.But the band gap of Fe, Cu, Mn, Co is little, produces in visible region and absorb, therefore not preferred.
Therefore, determine to adopt In as the first composition.In addition, the 3rd composition determines to adopt Zn or Sn.In addition, in order to improve specific refractory power, can not In and Sn be used as the second composition, therefore determining to adopt Ti or Cr as the second composition.
In the present invention, the content of In is with In 2o 3be scaled 2 ~ 65 % by mole.More preferably 2 ~ 30 % by mole.In addition, the content of Ti or Cr is respectively with TiO 2convert or Cr 2o 3be scaled 3 ~ 65 % by mole.More preferably 3 ~ 30 % by mole.Content as ternary Zn or Sn can be derived from the atomic ratio of the C/ (A+B) of the content of In and Ti or Cr and afore mentioned rules, preferably, is scaled more than 40 % by mole with ZnO or SnO.Can realize there is the high-transmission rate of expectation and the conductive film of high refractive index thus.
In the present invention, setting A/B atomic ratio is 0.5≤A/B≤5.When exceeding this scope, can not get desired optical characteristics, thus not preferred.Particularly, when A/B is more than 5, the content of high-index material (Ti or Cr) reduces, and there is the problem that specific refractory power reduces.In addition, in the present invention, setting C/ (A+B) atomic ratio is 0 < C/ (A+B) < 10, is more preferably 0 < C/ (A+B) < 5.When exceeding this scope, the content of high-index material reduces as described above, there is the problem that can not obtain desired high refractive index.
Sintered compact of the present invention is when using as sputtering target, and preferred relative density is more than 90%.The raising of density has following effect, can improve the homogeneity of sputtered film, and suppresses to produce powder during sputtering.Relative density is more than 90% can be realized by the manufacture method of sintered compact of the present invention described later.
In addition, sintered compact of the present invention is when using as sputtering target, and body resistance is preferably 10 below Ω cm.Because body resistance reduces, thus DC spatter film forming can be passed through.Compared with DC sputtering sputters with RF, film forming speed is faster, and sputtering yield is more excellent, can improve turnout.In addition, according to manufacturing condition, also have the situation of carrying out RF sputtering, even if in this case, film forming speed is also improved.
The specific refractory power of film under wavelength 550nm made by sputtering of the present invention can reach more than 2.05.In addition, the optical extinction coefficient of film of the present invention under wavelength 450nm can reach less than 0.05.In addition, the ratio resistance of film of the present invention can reach 1M below Ω cm.Such high refractive index and the high conductive membrane of transmissivity are useful as optical adjustment film in the optics such as indicating meter, contact panel purposes.Particularly, the present invention's optical extinction coefficient that can obtain under wavelength 450nm is less than 0.01 and the film of the high refractive index absorbed occurs hardly in short wavelength region, therefore, can be described as the excellent material for obtaining desired optical characteristics.
, in above-mentioned compositing range, there is crystalline film and amorphous film in film of the present invention.In addition, also exist both the partial crystallization film that coexists.In the present invention, the crystallinity about such film is not particularly limited, and can carry out composition regulate according to desired crystallinity.In addition, the crystallinity (crystalline film, amorphous film or partial crystallization film) of film can utilize the presence or absence of diffraction peak to evaluate by X-ray diffraction method.
Sintered compact of the present invention can by comprising raw material powder pressure sintering under rare gas element or vacuum environment (hot pressing) of oxide compound of each formation metal, or by raw material powder press forming, then by normal pressure-sintered for this molding and manufacture.Now, sintering temperature is preferably more than 900 DEG C and less than 1500 DEG C.During lower than 900 DEG C, can not get highdensity sintered compact; On the other hand, during more than 1500 DEG C, produce composition deviation, density reduction due to the evaporation of material, therefore not preferred.
Embodiment
Be described based on embodiment and comparative example below.It should be noted that, the present embodiment is only an example, and the present invention is not by any restriction of this example.That is, the present invention only limits by claims, comprises the various distortion beyond the embodiment that comprises in the present invention.
Evaluation methods in embodiment, comparative example etc. are as described below.
(being grouped into about one-tenth)
Device: the SPS3500DD that SII company manufactures
Method: ICP-OES (high-frequency inductive coupling plasma body luminescence analysis)
(about relative density)
Sintered density by the size with vernier caliper measurement sintered compact, and is calculated by its volume and gravimetry.
Theoretical density is as follows by the monomer density of starting oxides is multiplied by mixing quality ratio respectively, and the value obtained is added and and obtain.In addition, relative density divided by theoretical density, and is multiplied by 100 and obtain by the density of oxidate sintered body.
Theoretical density=∑ (monomer density × mixing quality ratio of each oxide compound)+(monomer density × mixed weight ratio of each oxide compound)+...
Relative density={ (density of sintered compact)/(theoretical density) } × 100
(about body resistance [ratio resistance, sheet resistance])
Device: the determination of resistivity device ∑-5+ that NPS company manufactures
Method: direct current 4 probe method
(about specific refractory power, optical extinction coefficient)
Device: the spectrophotometer UV-2450 that SHIMADZU company manufactures
Method: calculate from transmissivity, surface back side reflectivity
(about film, condition)
Device: ANELVA SPL-500
Substrate: φ 4 inches
Substrate temperature: room temperature
(embodiment 1)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1150 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.
Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters.Sputtering condition is set as, DC sputtering, sputtering power 500W, ar pressure 0.5Pa containing 0 ~ 2 volume % oxygen, film forming is thickness in addition, the annealing after base plate heating when sputtering, sputtering.
Show the result in table 1.As shown in table 1, the relative density of sputtering target reaches 98.9%, and body resistance is 2.9 × 10 -3Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.10 (wavelength 550nm), optical extinction coefficient is 0.01 (wavelength 450nm), resistance value is 2.3 × 10 -2more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.In addition, about resistance value, according to some variation of oxygen amount during sputtering, when oxygen amount increases, resistance value has the tendency of rising.Therefore, its lower value is described.
(embodiment 2)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1150 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 100.3%, and body resistance is 8.7 × 10 -3Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.15 (wavelength 550nm), optical extinction coefficient is less than 0.01 (wavelength 450nm), resistance value is 1.8 × 10 + 2more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 3)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1100 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 99.5%, and body resistance is 3.5 × 10 -3Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.22 (wavelength 550nm), optical extinction coefficient is less than 0.01 (wavelength 450nm), resistance value is 1.2 × 10 + 2more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 4)
Prepare In 2o 3powder, Cr 2o 3powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1100 DEG C, pressure 350kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 100.2%, and body resistance is 8.0 × 10 -4Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.10 (wavelength 550nm), optical extinction coefficient is 0.02 (wavelength 450nm), resistance value is 2.8 × 10 -2more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 5)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1150 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 100.1%, and body resistance is 9.6 × 10 -4Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.12 (wavelength 550nm), optical extinction coefficient is less than 0.01 (wavelength 450nm), resistance value is 8.7 × 10 -3more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 6)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1100 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 99.8%, and body resistance is 8.4 × 10 -4Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.05 (wavelength 550nm), optical extinction coefficient is less than 0.01 (wavelength 450nm), resistance value is 9.3 × 10 -3more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 7)
Prepare In 2o 3powder, Cr 2o 3powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1150 DEG C, pressure 350kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 98.2%, and body resistance is 5.2 × 10 -3Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.07 (wavelength 550nm), optical extinction coefficient is 0.03 (wavelength 450nm), resistance value is 3.6 × 10 -2more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(embodiment 8)
Prepare In 2o 3powder, TiO 2powder, SnO 2powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix press forming, then by molding under ar gas environment, normal pressure-sintered under the condition of temperature 1300 DEG C.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the relative density of sputtering target reaches 97.8%, and body resistance is 8.7 × 10 -2Ω cm, can carry out stable DC sputtering.And the specific refractory power of the film that spatter film forming obtains is 2.08 (wavelength 550nm), optical extinction coefficient is 0.01 (wavelength 450nm), resistance value is 3.1 × 10 1more than Ω cm, obtains the conductive film of high refractive index and high-transmission rate.
(comparative example 1)
Prepare In 2o 3powder, Fe 2o 3powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1050 DEG C, pressure 350kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the optical extinction coefficient of the film that spatter film forming obtains is 0.16 (wavelength 450nm), produces photoabsorption in short wavelength region, does not obtain desired high-transmission rate film.
(comparative example 2)
Prepare In 2o 3powder, TiO 2powder, CuO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Next, by this powder mix under an argon atmosphere, temperature 1050 DEG C, pressure 350kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the optical extinction coefficient of the film that spatter film forming obtains is more than 0.2 (wavelength 450nm), produces photoabsorption in short wavelength region, does not obtain desired high-transmission rate film.
(comparative example 3)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Now, atomic ratio greatly to 8.0 of In/Ti.Next, by this powder mix under an argon atmosphere, temperature 1150 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the specific refractory power of the film that spatter film forming obtains is that 2.01 (wavelength 550nm), specific refractory power are low, does not obtain desired high refractive index film.
(comparative example 4)
Prepare In 2o 3powder, TiO 2powder, ZnO powder, and these powder are carried out allocating, mixing with the proportioning recorded in table 1.Now, atomic ratio greatly to 15 of Zn/ (In+Ti).Next, by this powder mix under an argon atmosphere, temperature 1050 DEG C, pressure 250kgf/cm 2condition under hot pressed sintering.Then, mechanical workout carried out to this sintered compact and be finish-machined to target shape.Next, the target of the diameter using above-mentioned precision work to obtain 6 inches, sputters under condition similarly to Example 1.Consequently, the specific refractory power of the film that spatter film forming obtains is that 2.02 (wavelength 550nm), specific refractory power are low, does not obtain desired high refractive index film.
Industrial applicability
The film formed by sputtering of the present invention, a part for the optical adjustment film in formation indicating meter, contact panel, the structure of optics, has following effect: in transmissivity, specific refractory power, electroconductibility, have extremely excellent characteristic.
In addition, the bulk resistance comprising the sputtering target of sintered compact of the present invention is low, density is high, therefore, it is possible to carry out stable DC sputtering.And, there is following unusual effect: the controlling of the sputtering of the feature sputtered as this DC can be made to be more prone to, improve film forming speed, improve sputtering yield.In addition, the powder produced when sputtering when can reduce film forming, improves the quality of film.

Claims (10)

1. a sintered compact, is characterized in that, comprises indium (In) and titanium (Ti) or chromium (Cr) and zinc (Zn) or tin (Sn) and oxygen (O); With In 2o 3convert containing 2 ~ 65 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 2 ~ 65 % by mole of Ti or Cr; The atomic ratio of In is set to A (atom %), the atomic ratio of Ti or Cr is set to B (atom %), when the atomic ratio of Zn or Sn being set to C (atom %), 0.5≤A/B≤5,0 < C/ (A+B) < 10.
2. sintered compact as claimed in claim 1, is characterized in that, with In 2o 3convert containing 2 ~ 30 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 3 ~ 30 % by mole of Ti or Cr, convert or SnO with ZnO respectively 2convert Zn or Sn containing more than 40 % by mole.
3. sintered compact as claimed in claim 1 or 2, is characterized in that, 0 < C/ (A+B) < 5.
4. the sintered compact according to any one of claims 1 to 3, is characterized in that, relative density is more than 90%.
5. the sintered compact according to any one of Claims 1 to 4, is characterized in that, body resistance is 10 below Ω cm.
6. a film, is characterized in that, comprises indium (In) and titanium (Ti) or chromium (Cr) and zinc (Zn) or tin (Sn) and oxygen (O); With In 2o 3convert containing 2 ~ 65 % by mole of In, respectively with TiO 2convert or Cr 2o 3convert containing 2 ~ 65 % by mole of Ti or Cr; The atomic ratio of In is set to A (atom %), the atomic ratio of Ti or Cr is set to B (atom %), when the atomic ratio of Zn or Sn being set to C (atom %), 0.5≤A/B≤5,0 < C/ (A+B) < 10.
7. film as claimed in claim 6, it is characterized in that, the specific refractory power under wavelength 550nm is more than 2.05.
8. film as claimed in claims 6 or 7, it is characterized in that, the optical extinction coefficient under wavelength 450nm is less than 0.05.
9. the film according to any one of claim 6 ~ 8, is characterized in that, ratio resistance is 1M below Ω cm.
10. the manufacture method of a sintered compact, the method of its sintered compact according to any one of manufacturing claims 1 ~ 5, it is characterized in that, by raw material powder under rare gas element or vacuum environment, more than 900 DEG C and less than 1500 DEG C pressure sinterings, or by raw material powder press forming, then by this molding under rare gas element or vacuum environment, more than 1000 DEG C and less than 1500 DEG C normal pressure-sintered.
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