CN104733482B - 固体摄像装置、固体摄像装置制造方法和电子设备 - Google Patents

固体摄像装置、固体摄像装置制造方法和电子设备 Download PDF

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Publication number
CN104733482B
CN104733482B CN201410766332.0A CN201410766332A CN104733482B CN 104733482 B CN104733482 B CN 104733482B CN 201410766332 A CN201410766332 A CN 201410766332A CN 104733482 B CN104733482 B CN 104733482B
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Prior art keywords
pixel
refractive index
phase difference
difference detection
index film
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CN201410766332.0A
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Chinese (zh)
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CN104733482A (zh
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关勇一
井上俊徳
狭山征博
中元幸香
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201410766332.0A 2013-12-18 2014-12-11 固体摄像装置、固体摄像装置制造方法和电子设备 Expired - Fee Related CN104733482B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010401447.5A CN111668246B (zh) 2013-12-18 2014-12-11 摄像装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013260785 2013-12-18
JP2013-260785 2013-12-18
JP2014067809A JP6115787B2 (ja) 2013-12-18 2014-03-28 固体撮像装置およびその製造方法、並びに電子機器
JP2014-067809 2014-03-28

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CN202010401447.5A Division CN111668246B (zh) 2013-12-18 2014-12-11 摄像装置

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CN104733482A CN104733482A (zh) 2015-06-24
CN104733482B true CN104733482B (zh) 2020-05-19

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JP (1) JP6115787B2 (cg-RX-API-DMAC7.html)
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JP6115787B2 (ja) 2013-12-18 2017-04-19 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9673239B1 (en) 2016-01-15 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method
CN108364966B (zh) * 2018-02-06 2021-03-02 德淮半导体有限公司 图像传感器及其形成方法
KR102520487B1 (ko) * 2018-02-21 2023-04-12 에스케이하이닉스 주식회사 이미지 센싱 장치
US10784300B1 (en) * 2019-04-16 2020-09-22 Visera Technologies Company Limited Solid-state imaging devices
CN110211982B (zh) * 2019-06-13 2021-12-07 芯盟科技有限公司 双核对焦图像传感器以及制作方法
KR102825030B1 (ko) 2020-07-20 2025-06-24 삼성전자주식회사 이미지 센서 및 전자 장치
US20220209193A1 (en) * 2020-12-31 2022-06-30 Samsung Display Co., Ltd. Display panel, display device including the same, and method for manufacturing the display panel
KR20220124333A (ko) * 2021-03-03 2022-09-14 삼성전자주식회사 이미지 센서
JP2024051266A (ja) * 2022-09-30 2024-04-11 シャープセミコンダクターイノベーション株式会社 固体撮像装置

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WO2013145433A1 (ja) * 2012-03-30 2013-10-03 富士フイルム株式会社 撮像素子及び撮像装置

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CN101900867A (zh) * 2009-05-26 2010-12-01 索尼公司 焦点检测装置、摄像器件和电子照相机
CN103140925A (zh) * 2010-09-29 2013-06-05 富士胶片株式会社 固态图像拾取元件和图像拾取设备
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Publication number Publication date
CN104733482A (zh) 2015-06-24
US20150171126A1 (en) 2015-06-18
US10559620B2 (en) 2020-02-11
JP6115787B2 (ja) 2017-04-19
US11605666B2 (en) 2023-03-14
US20200127036A1 (en) 2020-04-23
US9425230B2 (en) 2016-08-23
CN111668246B (zh) 2023-09-15
CN111668246A (zh) 2020-09-15
JP2015135936A (ja) 2015-07-27
US20160276398A1 (en) 2016-09-22
US20230207603A1 (en) 2023-06-29

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