CN104716131A - Method for manufacturing light emitting device and light emitting device - Google Patents
Method for manufacturing light emitting device and light emitting device Download PDFInfo
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- CN104716131A CN104716131A CN201410778837.9A CN201410778837A CN104716131A CN 104716131 A CN104716131 A CN 104716131A CN 201410778837 A CN201410778837 A CN 201410778837A CN 104716131 A CN104716131 A CN 104716131A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Provided is a method for manufacturing a light emitting device that can manufacture the light emitting device at low cost. The manufacturing method of a light emitting device includes: a mounting step of mounting a plurality of light emitting elements at predetermined intervals in one direction on a substrate; a first resin formation step of continuously forming a first resin layer in the one direction to directly cover the light emitting elements mounted; a trench formation step of forming a trench between the light emitting elements in a direction intersecting the one direction and a second resin charging step of charging a second resin into the trench.
Description
Technical field
The manufacture method that the present invention relates to light-emitting device and the light-emitting device using it to manufacture.
Background technology
The light-emitting device that the semiconductor light-emitting elements that use is representative with light-emitting diode (LED) is formed is compared with existing light source, energy-saving effect is very superior and can semi-permanently use, therefore backlight with, automobile, plane skylight, traffic lights, other general lighting lamp with etc. application market just extensively universally in general industry to come.
As an example of the light-emitting device of use LED, propose as guaranteeing that high front face brightness has the light-emitting device of light-emitting component and reflection part, wherein this reflection part covers the side (such as patent documentation 1) of the transparent member of the top configuration of this light-emitting component.
Specifically, in the light-emitting device of patent documentation 1, wavelength conversion layer is formed at the upper surface being installed on the light-emitting component on substrate, wavelength conversion layer is equipped with light transmission plate-shaped member, around light-emitting component, wavelength conversion layer and light transmission plate-shaped member, is formed with light reflective parts.
Manufacture the light-emitting device of patent documentation 1 as follows.
First, the light-emitting component of flip chip type is installed at the upper surface of substrate.
Next, to the uncured resin that the wavelength conversion layer of the upper surface supply ormal weight of light-emitting component is formed.Then, carry the light transmission plate-shaped member slightly larger than the upper surface of light-emitting component and resin is cured.
Afterwards, the light reflective parts covering the side of wavelength conversion layer, the side of light transmission plate-shaped member are formed.
Patent documentation 1: Japanese Unexamined Patent Publication 2013-197450 publication
But, in the manufacture method of the light-emitting device of patent documentation 1, uncured resin that wavelength conversion layer formed applied respectively to mounted each light-emitting component and carries light transmission plate-shaped member, therefore there is the problem becoming many man-hour, cannot to manufacture at an easy rate and so on.
Summary of the invention
Therefore, the object of the invention is to, the manufacture method and cheap and that brightness is high light-emitting device that can manufacture light-emitting device are at an easy rate provided.
In order to realize the above object, the feature of the first manufacture method of light-emitting device involved in the present invention is, comprising:
Installation procedure, in this operation, substrate installs multiple light-emitting component along a direction with the interval of regulation;
First resin formation process, in this operation, forms directly covering above-mentioned mounted multiple light-emitting component along above-mentioned direction continuous print first resin bed;
Groove formation process, in this operation, the direction that edge and an above-mentioned direction intersect between above-mentioned multiple light-emitting component forms groove; And
Second resin filling operation, in this operation, fills the second resin respectively to above-mentioned groove.
In addition, the feature of the second manufacture method of light-emitting device involved in the present invention is, comprising:
Installation procedure, in this operation, substrate installs multiple light-emitting component along a direction with the interval of regulation;
First resin formation process, in this operation, forms the first resin bed directly covering above-mentioned mounted multiple light-emitting components by silk screen printing;
Groove formation process, in this operation, the direction that edge and an above-mentioned direction intersect between above-mentioned multiple light-emitting component forms groove; And
Second resin filling operation, in this operation, fills the second resin respectively to above-mentioned groove.
First light-emitting device involved in the present invention comprises: substrate; Light-emitting component, it is arranged on substrate; First resin bed, it is arranged on aforesaid substrate and also directly covers above-mentioned light-emitting component; And second resin bed, it is arranged at the side of the first resin around this first resin,
The feature of described light-emitting device is,
The side of above-mentioned first resin bed has the first side and the second side, and above-mentioned first side is different relative to the inclination angle of substrate from above-mentioned second side.
Second light-emitting device involved in the present invention comprises: substrate; Light-emitting component, it is arranged on substrate; First resin bed, it is arranged on aforesaid substrate and also directly covers above-mentioned light-emitting component; And second resin bed, it is arranged at the side of the first resin around this first resin,
The feature of described light-emitting device is,
The side of above-mentioned first resin bed has the first side and the second side, and the inclination angle of the aforesaid substrate side of at least one party of above-mentioned first side and above-mentioned second side is less than the inclination angle away from the position of aforesaid substrate.
According to the manufacture method of light-emitting device involved in the present invention as constructed as above, light-emitting device can be manufactured at an easy rate.
In addition, according to light-emitting device involved in the present invention, cheap and that brightness is high light-emitting device can be provided.
Accompanying drawing explanation
Figure 1A is the vertical view of the assembly substrate of the manufacture method of execution mode involved in the present invention.
Figure 1B is in the manufacture method of execution mode, has installed the vertical view of light-emitting component and semiconductor element.
Fig. 1 C is in the manufacture method of execution mode, defines the vertical view of the first resin bed.
Fig. 1 D is in the manufacture method of execution mode, defines the vertical view of the first groove.
Fig. 1 E is in the manufacture method of execution mode, defines the vertical view of resin frame.
Fig. 1 F is in the manufacture method of execution mode, defines the vertical view of the second resin bed.
Fig. 1 G is in the manufacture method of execution mode, forms vertical view when the first separating tank is separated with the second separating tank 43.
Fig. 2 A ~ Fig. 2 C is the figure of the structure of the light-emitting device schematically representing execution mode involved in the present invention, and Fig. 2 A is vertical view, and Fig. 2 B is end view, and Fig. 2 C is the cutaway view of the A-A ' line of vertical view along Fig. 2 A.
Fig. 3 A, Fig. 3 B are the figure of the structure of the light-emitting device schematically representing variation involved in the present invention, and Fig. 3 A is vertical view, and Fig. 3 B is the cutaway view of the B-B ' line of vertical view along Fig. 3 A.
Fig. 4 is the end view of the structure of the light-emitting device schematically representing other variation involved in the present invention.
Fig. 5 represents in execution mode involved in the present invention, the cutaway view of the shape of the first side when forming the first resin bed to manufacture respectively on each light-emitting component.
The explanation of Reference numeral:
2... light-emitting component; 3... semiconductor element; 5... substrate; 10... assembly substrate; 20... the first resin bed; 20a... first side; 20b... second side; 30... the second resin bed; 41... groove (the first groove); 42... the first separating tank; 43... the second separating tank; 100... light-emitting device.
Embodiment
Below, with reference to accompanying drawing, execution mode involved in the present invention is described.
As shown in Fig. 2 A ~ Fig. 2 C, the light-emitting device 100 of present embodiment possesses the first resin bed 20 of the light transmission of covering luminous element 2 on the substrate 5 and is arranged at second resin bed 30 of surrounding of the first resin bed 20.The upper surface that second resin bed 30 covers the substrate 5 except the upper surface of the first resin bed 20 is overall.In light-emitting device 100, by be surrounded by the second resin bed 30 and the upper surface of the first resin bed 20 exposed forms light-emitting area.For light-emitting device 100 as constructed as above, because light-emitting area is surrounded by the second resin bed 30, so the light sent by light-emitting component can be made efficiently from light-emitting area injection, thus obtain high front face brightness.Here, preferably the first resin bed 20 is formed in the mode directly covering (contacting with light-emitting component 2) light-emitting component 2.
In addition, the light-emitting device 100 of present embodiment can be manufactured by following such manufacture method, is manufactured, thus can provide the light-emitting device that brightness is high, light transmission is excellent at an easy rate by this manufacture method.
The manufacture method of the light-emitting device of present embodiment is that make multiple light-emitting device in the lump on assembly substrate after, be separated into the manufacture method of single light-emitting device, it is formed as follows.
1. Substrate manufacture operation
As shown in Figure 1A, prepare at the unit area 1 corresponding with each light-emitting device the assembly substrate 10 being formed with negative electrode 13 and positive electrode 16 respectively.Assembly substrate 10 comprises and is multiplely configured to rectangular unit area 1.Constituent parts region 1 is made up of rectangular region respectively, in constituent parts region 1, is set side by side with light-emitting component 2 and semiconductor element 3 along its length.Below, in constituent parts region 1, as shown in Figure 1A ~ Fig. 1 G, the region being provided with light-emitting component 2 is called first area 1a, the region being provided with semiconductor element 3 is called second area 1b.Here, be configured with multiple unit area 1 in a matrix form to refer to, the direction (first direction) orthogonal with the length direction of unit area 1 is configured with multiple unit area 1, and is also configured with multiple unit area 1 on the length direction (second direction) of unit area 1.
Negative electrode 13 is made up of with the second negative electrode 12 being positioned at second area 1b the first negative electrode 11 being positioned at first area 1a, and the first negative electrode 11 has the first extension electrode 11a of extending along the direction orthogonal with the length direction of unit area 1 and from the first extension electrode 11a to two the second extension electrode 11b that the length direction of unit area 1 extends.
Further, the second extension electrode 11b has the projection connecting portion that multiple width broadens.
Positive electrode 16 is made up of with the second positive electrode 15 being positioned at second area 1b the first positive electrode 14 being positioned at first area 1a, and the first positive electrode 14 is formed at the region not being formed with the first negative electrode 11 in the 1a of first area with opening predetermined distance with the first negative electrode 11 sky overall.
Second negative electrode 12 and the second positive electrode 15 are formed as the center line relative to the length direction of unit area 1 and line is symmetrical.
Above, in the unit area 1 of assembly substrate 10, except the separation unit of Rack be separated with positive electrode 16 by negative electrode 13, be formed with one of them electrode of negative electrode 13 or positive electrode 16.
2. light-emitting component installation procedure
At the constituent parts region 1 of assembly substrate 10 difference installing light emitting element 2.
Here first, as shown in Figure 1B, to be connected with the first negative electrode 11 of unit area 1 to make the n-electrode of light-emitting component 2 and the mode that is connected with the first positive electrode 14 of unit area 1 of the p-electrode of light-emitting component 2, light-emitting component 2 to be installed on the first area 1a in constituent parts region 1.
Specifically, such as form projection respectively at the projection connecting portion of two the second extension electrode 11b and the projection connecting portion of the first positive electrode 14, utilize this projection to be connected with the n-electrode of light-emitting component 2 by the projection connecting portion of the second extension electrode 11b, and the projection connecting portion of the first positive electrode 14 is connected with the p-electrode of light-emitting component 2.Be provided with the projection connecting portion of the second extension electrode 11b respectively in three positions (round-shaped part) at each second extension electrode 11b, and such as, between two the second extension electrode 11b and the outside of the second extension electrode 11b be provided with the projection connecting portion of the first positive electrode 14 respectively in multiple position.
3. the first resin bed formation process
Next, as shown in Figure 1 C, the first resin bed 20 covered in the lump along the multiple light-emitting components 2 installed in the unit area 1 of first direction arrangement is made to be formed as (such as banded) shape continuously along a direction.The material of the first resin bed can use the organic siliconresin containing YAG system fluorophor.This first resin bed 20 is such as formed by silk screen printing.Form the first resin bed 20 by such formation method, thus there is no that ladder is poor, but minute asperities can be formed at the upper surface of the first resin bed 20.That is, the surface of the first resin bed 20 light-emitting component 2 formed uprises (protuberance), the surperficial step-down (recess) between light-emitting component 2.When being formed first resin bed 20 by silk screen printing, such as, the viscosity of resin slurry (resin before solidification) used during printing is such as adjusted to 200 ~ 600Pas, is preferably adjusted to about 400Pas.By being adjusted to such viscosity, thus on the upper surface of the first resin bed 20, concavo-convex, particularly recess and protuberance ladder difference becomes clear and definite, and specifies the shape of protuberance upper surface accurately.Shape due to this protuberance upper surface is the shape of the light-emitting area of light-emitting device, so can carry out volume production to the light-emitting device that the shape of light-emitting area is consistent.
Afterwards, the first resin bed is heating and curing.
In the present embodiment, first resin bed 20 is formed in order to band shape, but the present invention is not limited thereto, such as, the first resin bed can be formed respectively on each light-emitting component 2, also multiple the first resin bed (that is, multiple first resin bed being formed as row) that the multiple light-emitting components 2 being arranged as row are sealed can be formed in addition.
At the first resin bed 20, also can comprise the light absorbing self-emission device 2 at least partially and send the fluorophor of the light of different wave length.Like this, the light-emitting device of the various glow colors different from the glow color of light-emitting component can be realized.
In the present embodiment, the first resin bed is defined by silk screen printing, as long as but the present invention can form covering luminous element continuously the first resin bed along a direction is just not limited to this, such as, also can by employing the formation such as transfer modling, compression molding, spraying of metal pattern.In addition, the flaky resin formed in addition can also be used.
4. semiconductor element mounting operation
Next, semiconductor element 3 is installed on respectively the second area 1b of unit area 1.
Semiconductor element 3 is such as connected with the second positive electrode 15 being positioned at second area 1b with the second negative electrode 12 being positioned at second area 1b respectively by projection.
Also before the first resin bed formation process, semiconductor element 3 can be installed.In this case, the first resin bed 20 is formed as not covering semiconductor element 3.
5. the first groove formation process
Next, as shown in figure ip, be formed with long limit along unit area 1 in the mode that the long limit with unit area 1 is parallel and arrive the second side 10b from the first side 10a of assembly substrate 10 and the groove 41 (hereinafter referred to as the first groove 41) arriving assembly substrate 10 from the surface of the first resin bed 20.
The position forming this first groove 41, when being finally separated into single light-emitting device, specifies the thickness being formed at the first resin bed 20 of the side of light-emitting component 2 of this light-emitting device.Therefore, the position of formation first groove 41 is set according to the thickness being formed at the first resin bed 20 of the side of light-emitting component 2 of light-emitting device.
In addition, the thickness needed for the second resin formed in the outside of the first resin bed 20 of the side being formed at light-emitting component 2 when being separated into single light-emitting device sets the width of the first groove 41.
In addition, preferably in ensuing operation, the first groove 41 makes the second resin impregnated by capillarity, and therefore preferably the width of the first groove 41 is set as the width that can be soaked into the second resin by capillarity.
And, also multiple first groove 41 can be formed with between the unit area 1 adjacent along first direction, preferably, as shown in figure ip, form the first groove 41 that the long limit along the unit area 1 of a side adjacent in a first direction formed and be separated from this first groove and these two first grooves of the first different grooves 41 formed along the long limit of the unit area 1 of a side.Thereby, it is possible to the width of adjustment the first groove, even if therefore when the width of the second resin bed is thicker, also can be formed efficiently.
In addition, the first groove 41 is at least formed as the degree of depth on surface arriving assembly substrate 10, but the mode being preferably formed to make the side of the first resin bed reliably cover the second resin bed exceedes the surface of assembly substrate 10 and reaches the degree of depth of the midway of thickness direction.In addition, by forming groove in this wise on substrate, the clinging force being filled in the second resin in groove and assembly substrate 10 can be improved, thus the high light-emitting device of reliability can be formed.
6. the second resin bed formation process
As shown in Fig. 1 E, Fig. 1 F, form the second resin bed 30.
The material of the second resin can use the organic siliconresin containing titanium oxide.
Here, first, as referring to figure 1e, to comprise the mode of the whole unit area 1 being separately installed with light-emitting component 2 and semiconductor element 3, resin frame 31 (resin frame formation process) is formed by the second resin.Resin frame 31 can by such as distributing and being formed.
The viscosity of the second resin before the solidification in resin frame formation process is such as set as 200 ~ 600Pas, is preferably set to about 400Pas.
Next, as shown in fig. 1f, in the region surrounded by resin frame 31, the second resin is made to flow into the part (recess) except the upper surface of the protuberance on light-emitting component 2, and certain hour is kept in the first groove 41, until utilize capillarity to soak into the second resin, afterwards, the second resin is made to be heating and curing (the second resin filling operation).Now, semiconductor element 3 is covered by the second resin.
The viscosity of the second resin before the solidification in the second resin filling operation is such as set as below 10Pas, is preferably set to about 4.5Pas.
Like this, form the second resin bed 32 in resin frame 31 inside, and form resin frame 31 second resin bed 30 integrated with the second resin bed 32.Second resin bed 30 also can directly cover semiconductor element 3.
Preferably this second resin bed comprises reflection part, owing to comprising reflection part, thus light can be made to penetrate efficiently from the upper surface (light-emitting area) of the first resin bed, realize the light-emitting device of high brightness.In addition, because the second resin bed comprises reflection part, thus the end of the first resin bed that is light-emitting area becomes clear and definite, can realize high brightness, light-emitting device that light transmission is excellent.
In the above embodiment, define resin frame 31 and the second resin bed 32 with identical resin, but the present invention is not limited thereto, also can forms resin frame 31 and the second resin bed 32 with different resins or material.
In addition, in the above embodiment, after formation resin frame, the second resin is flowed in resin frame, thus form the second resin bed, but the present invention is not limited thereto, and forms the second resin bed with also can not using resin frame.
7. separation circuit
The multiple light-emitting devices made under Set Status are separated into single light-emitting device.
Though the method be separated is not particularly limited, but specifically, as shown in Figure 1 G, between unit area 1 adjacent in a first direction, and the central portion between above-mentioned unit area 1 forms the first separating tank 42, between unit area 1 adjacent in a second direction, and the central portion between above-mentioned unit area 1 forms the second separating tank 43 thus is separated.Such as, in the structure of the present embodiment of formation two the first grooves 41, the first separating tank 42 is such as formed in the mode do not contacted with the first groove 41 between the first groove 41.
Above, make with the upper surface of the first resin bed 20 for light-emitting area, and the surrounding of light-emitting area is embedded in the light-emitting device 100 of the execution mode shown in Fig. 2 A ~ Fig. 2 C of the second resin bed 30.
According to the manufacture method of the light-emitting device of execution mode involved in the present invention described above, the first resin bed can be formed in the lump, therefore such as with carry the method for the light transmission plate-shaped member of tabular respectively corresponding to each light-emitting component compared with, can process number be reduced, thus light-emitting device can be manufactured at an easy rate.
In addition, in the manufacture method of the light-emitting device of execution mode involved in the present invention, when making the first resin bed 20 manufacture the light-emitting device of the glow color different from the glow color of light-emitting component containing fluorophor, from various fluorophor, select with the glow color of hope the first resin bed 20 is contained fluorophor accordingly, thus identical manufacture method can be utilized to realize the light-emitting device of diversified glow color.
And, the formation width of the first resin bed 20 of the band shape formed, the shape of the first resin bed 20 and the forming position of the first groove continuously can be selected along a direction moderately and at the right moment, therefore, it is possible to manufacture the light-emitting device of various sizes according to required specification according to required specification.
Therefore, according to the manufacture method of the light-emitting device of execution mode involved in the present invention, can be corresponding with the manufacture of the multiple multiplex light-emitting device of reply demand, even if the demand of therefore producing on a small quantity for multi items also can provide cheap light-emitting device.
This light-emitting device 100 is manufactured by above-mentioned manufacture method, and therefore the shape of the first resin bed 20 has the feature brought by manufacture method.
Specifically, as shown in Fig. 2 B, Fig. 2 C, the first side 20a along first resin bed 20 on the long limit of light-emitting device 100 is different relative to the inclination angle of substrate 5 from the second side 20b of the first resin bed 20 of the minor face along light-emitting device 100.Specifically, the first side 20a of the first resin bed 20 has the inclination angle corresponding with the section of groove 41 (sidewall), and almost vertical relative to the upper surface of substrate 5.On the other hand, the second side 20b has the inclination angle corresponding with formation method during formation the second resin bed 30, and such as having interior angle 0 relative to the upper surface of substrate 5 is the such gradient of acute angle.Here, interior angle θ refers to the upper surface angulation of the substrate 5 of the inside of relative first resin bed 20 of the second side 20b.In addition, when being formed first resin bed 20 by silk screen printing, for the first side 20a, no matter be how many apart from the distance of substrate, in fact inclination angle is all constant, on the other hand, for the second side 20b, the inclination angle of substrate 5 side is than the inclination angle little (interior angle is little) away from the position of substrate.
That is, after being divided into single light-emitting device, the first resin bed 20 of each light-emitting device becomes the upper surface tetragonous cone table shape less than the bottom surface of substrate-side.In addition, in this manual, assuming that the shape that only the second side 20b tilts is also contained in tetragonous cone table shape.In addition, the first resin bed 20 be not formed as banded, and when such as forming the first resin bed respectively on each light-emitting component 2, such as, shown in Fig. 5, the first side 20a also tilts identically with the second side 20b.Like this, the side that the mode that the first resin bed has the upper surface side of the first resin bed is diminished tilts, thus illuminating part can be reduced further, the light-emitting device that perspectivity is excellent can be realized.In addition, Fig. 5 is the cutaway view of the light-emitting device shown in Fig. 4, is the cutaway view corresponding with Fig. 2 C.
In addition, in the above-described embodiment, first resin bed 20 is formed as banded, and on the direction orthogonal with the length direction of this band shape, form the first groove 41, therefore in the light-emitting device 100 after being divided into single light-emitting device, first resin bed is rectangle when top view, and the first side 20a and the second side 20b are set to corresponding with the opposed both sides of rectangle respectively.
In the manufacture method of the light-emitting device of above execution mode, as shown in Figure 1 G, between unit area 1 adjacent in a first direction, and form the first separating tank 42 away from the position of the first groove 41 and be separated.As a result, in light-emitting device 100 after isolation, as shown in Fig. 2 A ~ Fig. 2 C, form the first resin bed 20 of the thickness of the separating distance with the first groove 41 and the first separating tank 42 along the side parallel with its length direction.
But the present invention is not limited thereto, also can forms the first separating tank of the wide width in interval between having than the first groove 41, thus be separated into single light-emitting device 100.In this case, in light-emitting device after singulation, as shown in Fig. 3 A, Fig. 3 B, do not form the first resin bed 20 in the side parallel with length direction, thus the second resin bed is exposed.
In addition, in any one situation in the manufacture method of the light-emitting device of execution mode and the manufacture method of variation, all to form the mode of the second resin bed 30 of desired thickness around the first resin bed 20 of covering luminous element 2, set the width of the first groove 41 and the width of the first separating tank 42 and position, this is self-evident.
In the above embodiment, the light-emitting device formed with a light-emitting component 2 is shown.But the present invention is not limited thereto, light-emitting device and the manufacture method thereof of use two light-emitting components or plural light-emitting component also can be applied to.Such as, the example forming light-emitting device with two light-emitting components 2 has been shown in Fig. 4 and Fig. 5.In the example shown in Figure 4, constituent parts region is provided with two light-emitting components 2.In the example shown in this Fig. 4, such as, the first resin bed 20 making to cover in the lump two light-emitting components 2 being installed on unit area is formed as banded continuously along a direction, thus can manufacture with the method identical with execution mode.In addition, in this case, between plural light-emitting component, the upper surface of the first resin bed also can form concave shape.In addition, the method for attachment of multiple light-emitting component can be connected in series, and also can be connected in parallel.
Below, each inscape of present embodiment, the preferred structure used and material are described.
(substrate 5 (assembly substrate 10))
Material as substrate is Ins. ulative material, be preferably the light of self-emission device, exterior light be difficult to through material.Such as, the resins such as the pottery such as aluminium oxide, aluminium nitride, phenolic resins, epoxy resin, polyimide resin, BT resin, polyphthalamide can be enumerated.In addition, when using resin, also can as required, by inorganic filler and mixed with resin such as glass fibre, silica, titanium oxide, aluminium oxide.Thereby, it is possible to realize the raising of mechanical strength, the minimizing of coefficient of thermal expansion, the raising of light reflectivity.In addition, because the light reflectivity of low-temperature sintered ceramics (LTCC) is higher, so light-emitting device of the present invention can be applicable to.
(light-emitting component 2)
As light-emitting component 2 preferably light-emitting diode, and the light-emitting component of arbitrary wavelength can be selected according to purposes.Such as, can enumerate that can send can the nitride-based semiconductor (ln of the light of the short wavelength of activating fluorescent body efficiently
xal
yga
1-X-Yn, 0≤X, 0≤Y, X+Y≤1).This nitride semiconductor luminescent element such as by forming nitride semiconductor layer to manufacture on the light-transmitting substrates such as sapphire substrate, and can select various emission wavelength according to the material of semiconductor layer, its mixed crystal degree.
(the first resin bed)
The material that the preferred light transmission of material as the first resin bed is high, such as, can use the heat reactive resin such as epoxy resin, organic siliconresin.Preferably the first resin bed contains fluorophor, also can add diffusant, filler etc. as required.
(fluorophor contained by the first resin bed)
Fluorophor is selected according to selected light-emitting component 2.
Send the representational fluorophor of the mixed light of white color system as suitably combining with blue light emitting device, such as, yttrium-aluminium-garnet system fluorophor (YAG system fluorophor) can be enumerated.When the light-emitting device for white light can be sent, adjustment is carried out to the concentration of the fluorophor that luminescent coating comprises and makes this fluorophor become white.The concentration of fluorophor is such as about 5 ~ 50%.
In addition, by using blue light emitting device to light-emitting component, using YAG system fluorophor and the many nitride based fluorophor of red color components to fluorophor, the light of rufous can be sent.Rufous refers to, be equivalent to the region that is made up of the long wavelength region in the yellow of JIS specification Z8110 and Huang Hong short wavelength region or the chromaticity range based on the region folded by the yellow area of the JIS specification Z9101 of Security Color and the red short wavelength region of Huang, such as, for dominant wavelength, it is the region of the scope being in 580nm ~ 600nm.
YAG system fluorophor is the general designation of the garnet structure comprising Y and Al, and be element activated by least one selected from rare earth element after phosphor body, it is excited by the blue light sent from light-emitting component and luminous.As YAG system fluorophor, such as, (Re can be enumerated
1-xsm
x)
3(Al
1-yga
y)
5o
12: (wherein, Re is from by least one element selected the group that Y, Gd, La, Lu are formed to Ce for 0≤X < 1,0≤y≤1.) etc.
In addition, nitride based fluorophor by from what activated by the rare earth element more than at least one selected in the group that Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Lu are formed, is comprise from by II race the element more than at least one selected the group that Be, Mg, Ca, Sr, Ba, Zn are formed, from the fluorophor by IV race the element more than at least one selected the group that C, Si, Ge, Sn, Ti, Zr, Hf are formed and N.Also O can be contained in the composition of this nitride phosphor.
As the concrete example of nitride based fluorophor, generally can enumerate with L
xm
yn
((2/3) X+ (4/3) y): R or L
xm
yo
zn
((2/3) X+ (4/3) Y-(2/3) z): (L is from by II race the element more than at least one selected the group that Be, Mg, Ca, Sr, Ba, Zn are formed to R.M is from by IV race the element more than at least one selected the group that C, Si, Ge, Sn, Ti, Zr, Hf are formed.R is from by the rare earth element more than at least one selected the group that Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Lu are formed.For X, Y, Z, 0.5≤X≤3,1.5≤Y≤8,0 < Z≤3.) the nitride based fluorophor that represents.
In addition, sending the fluorophor of red light as absorbing blue light, also can use KSF fluorophor.
(semiconductor element 3)
Semiconductor element 3 is arranged separately relative to light-emitting component 2, and it is as required and is adjacent to light-emitting component 2 element that configures on the substrate 5.Semiconductor element 3 is such as flip-chip mounted.As such semiconductor element, the transistor for controlling light-emitting component, the following protection component illustrated can be enumerated.Protection component is for the protection of light-emitting component 2 thus makes it can not cause the element of element destruction, degradation due to excessive applying voltage.Specifically, protection component is made up of the Zener diode (ZenerDiode) becoming "on" position when being applied in the voltage of more than assigned voltage.Protection component is the semiconductor element in the same manner as light-emitting component 2 with p-electrode and n-electrode, and it is electrically connected with the p-electrode of inverse parallel ground mode and light-emitting component 2 and n-electrode.When protection component, also make each electrode of protection component opposed with the top of each conductive component identically with the situation of light-emitting component, and apply heat, ultrasonic wave and load, thus conductive component is engaged with protection component.
Thus, even if apply excessive voltage between pn two electrode to light-emitting component 2 and make its voltage exceed the Zener voltage of Zener diode, under also Zener voltage can being remained between pn two electrode of light-emitting component 2, more than this Zener voltage can not be become.Therefore, by possessing protection component, can prevent the interelectrode voltage of pn two from becoming more than Zener voltage, thus can suitably prevent from applying the element destruction of the excessive light-emitting component 2 caused by voltage, the generation of degradation.
(the second resin bed 30)
As the material of the second resin bed 30, such as, heat-curing resin, thermoplastic resin etc. can be used.More specifically, phenolic resins, epoxy resin, BT resin, PPA or organic siliconresin etc. can be enumerated.In addition, in the resin of parent forming them, make the light that is difficult to absorb self-emission device 2 and reflection part (the such as TiO larger relative to the refringence of the resin forming parent
2, Al
2o
3, ZrO
2, MgO) etc. powder dispersion, thus can reverberation efficiently.
For the filling of the second resin bed 30, such as, in the upside of the assembly substrate 10 secured, use can relative to assembly substrate 10 along the vertical direction or the resin discharger of horizontal direction etc. mobile (movably) carry out the filling of the second resin bed 30.That is, move by making the resin discharger limit being filled with resin discharge liquid resin limit from the nozzle of its front end, thus inject the second resin near light-emitting component 2 and semiconductor element 3.The translational speed of resin discharger suitably can be adjusted according to the viscosity of resin used, temperature etc.By making pressure of being subject to during discharge etc. constant etc., the adjustment of discharge rate can be carried out.
Claims (13)
1. a manufacture method for light-emitting device, is characterized in that, comprising:
Installation procedure, in this operation, substrate installs multiple light-emitting component along a direction with the interval of regulation;
First resin formation process, in this operation, forms directly covering described mounted multiple light-emitting component along described direction continuous print first resin bed;
Groove formation process, in this operation, the direction that edge and a described direction intersect between described multiple light-emitting component forms groove; And
Second resin filling operation, in this operation, fills the second resin respectively to described groove.
2. a manufacture method for light-emitting device, is characterized in that, comprising:
Installation procedure, in this operation, substrate installs multiple light-emitting component along a direction with the interval of regulation;
First resin formation process, in this operation, forms the first resin bed directly covering described mounted multiple light-emitting components by silk screen printing;
Groove formation process, in this operation, the direction that edge and a described direction intersect between described multiple light-emitting component forms groove; And
Second resin filling operation, in this operation, fills the second resin respectively to described groove.
3. the manufacture method of light-emitting device according to claim 1 and 2, is characterized in that,
In described groove formation process, between described light-emitting component, form multiple described groove.
4. the manufacture method of the light-emitting device according to any one of claims 1 to 3, is characterized in that,
In described groove formation process, described flute profile is become the degree of depth of the midway of the thickness direction arriving described substrate.
5. the manufacture method of the light-emitting device according to any one of Claims 1 to 4, is characterized in that,
Before being included in described second resin filling operation, semiconductor element and each light-emitting component are installed accordingly operation on the substrate,
In described second resin filling operation, form described second resin on the substrate in the mode making the upper surface of the first resin on light-emitting component expose, and utilize described second resin directly to cover described semiconductor element.
6. the manufacture method of the light-emitting device according to any one of Claims 1 to 5, is characterized in that,
Also comprise separating tank formation process, in this operation, the direction that edge and a described direction intersect between described light-emitting component forms separating tank.
7. a light-emitting device, it comprises: substrate; Light-emitting component, it is arranged on substrate; First resin bed, it arranges on the substrate and directly covers described light-emitting component; And second resin bed, it is arranged at the side of the first resin bed around this first resin bed,
The feature of described light-emitting device is,
The side of described first resin bed has the first side and the second side, and described first side is different relative to the inclination angle of substrate from described second side.
8. light-emitting device according to claim 7, is characterized in that,
No matter the distance of described first side and described substrate, in fact inclination angle is all constant, and the inclination angle of the described substrate-side of described second side is less than the inclination angle away from the position of described substrate.
9. a light-emitting device, it comprises: substrate; Light-emitting component, it is arranged on substrate; First resin bed, it arranges on the substrate and directly covers described light-emitting component; And second resin bed, it is arranged at the side of the first resin bed around this first resin bed,
The feature of described light-emitting device is,
The side of described first resin bed has the first side and the second side, and the inclination angle of the described substrate-side of at least one party of described first side and described second side is less than the inclination angle away from the position of described substrate.
10. the light-emitting device according to any one of claim 7 ~ 9, is characterized in that,
Described first resin bed is rectangle when top view, and described first side is arranged at the opposed both sides of rectangle respectively with described second side.
11. light-emitting devices according to any one of claim 7 ~ 10, is characterized in that,
Described first resin bed is the tetragonous cone table shape that upper surface is less than the bottom surface of substrate-side.
12. light-emitting devices according to any one of claim 7 ~ 11, is characterized in that,
Described first resin bed comprises fluorophor.
13. light-emitting devices according to any one of claim 7 ~ 12, is characterized in that,
There is the semiconductor element of the position be arranged at away from described first resin bed on the substrate, and this semiconductor element is covered by described second resin.
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| JP6760321B2 (en) * | 2018-03-20 | 2020-09-23 | 日亜化学工業株式会社 | Light emitting device and manufacturing method of light emitting device |
| KR102660614B1 (en) * | 2018-09-10 | 2024-04-26 | 삼성전자주식회사 | Display apparatus and manufacturing method thereof |
| JP6992137B2 (en) * | 2020-08-31 | 2022-01-13 | ヒロセ電機株式会社 | Manufacturing method of opto-electric conversion connector, opto-electric conversion connector and opto-electric conversion connector device using it |
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| EP3846228A1 (en) | 2021-07-07 |
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| EP2887407A1 (en) | 2015-06-24 |
| CN104716131B (en) | 2019-06-28 |
| US20150171267A1 (en) | 2015-06-18 |
| US9673360B2 (en) | 2017-06-06 |
| JP2015118993A (en) | 2015-06-25 |
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| EP2887407B1 (en) | 2021-05-05 |
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