CN104704571A - 自偏置电流参考 - Google Patents

自偏置电流参考 Download PDF

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Publication number
CN104704571A
CN104704571A CN201380050999.4A CN201380050999A CN104704571A CN 104704571 A CN104704571 A CN 104704571A CN 201380050999 A CN201380050999 A CN 201380050999A CN 104704571 A CN104704571 A CN 104704571A
Authority
CN
China
Prior art keywords
transistor
bit line
voltage
electric current
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380050999.4A
Other languages
English (en)
Chinese (zh)
Inventor
戴维·弗朗西斯·米图斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Microchip Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microchip Technology Inc filed Critical Microchip Technology Inc
Publication of CN104704571A publication Critical patent/CN104704571A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Read Only Memory (AREA)
CN201380050999.4A 2012-09-18 2013-09-18 自偏置电流参考 Pending CN104704571A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261702338P 2012-09-18 2012-09-18
US61/702,338 2012-09-18
US14/029,741 2013-09-17
US14/029,741 US9129695B2 (en) 2012-09-18 2013-09-17 Self-biasing current reference
PCT/US2013/060302 WO2014047114A1 (en) 2012-09-18 2013-09-18 Self-biasing current reference

Publications (1)

Publication Number Publication Date
CN104704571A true CN104704571A (zh) 2015-06-10

Family

ID=50274321

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380050999.4A Pending CN104704571A (zh) 2012-09-18 2013-09-18 自偏置电流参考

Country Status (6)

Country Link
US (1) US9129695B2 (enExample)
EP (1) EP2898512A1 (enExample)
JP (1) JP2015531957A (enExample)
KR (1) KR20150058408A (enExample)
CN (1) CN104704571A (enExample)
WO (1) WO2014047114A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9129680B2 (en) * 2012-09-18 2015-09-08 Microchip Technology Incorporated Self-biasing multi-reference

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080106345A1 (en) * 2006-11-03 2008-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage controlled oscillator with gain compensation
US20110286259A1 (en) * 2010-05-24 2011-11-24 Hewlett-Packard Development Company, L.P. Reading Memory Elements Within a Crossbar Array

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052307A (en) * 1998-08-11 2000-04-18 Texas Instruments Incorporated Leakage tolerant sense amplifier
US6407946B2 (en) * 1999-12-08 2002-06-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
JP2001229686A (ja) * 1999-12-08 2001-08-24 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
US6891768B2 (en) 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
FR2888659A1 (fr) * 2005-07-18 2007-01-19 St Microelectronics Sa Amplificateur de lecture pour memoire non volatile
KR100781984B1 (ko) 2006-11-03 2007-12-06 삼성전자주식회사 셀프 레퍼런스를 갖는 센스앰프 회로 및 그에 의한 센싱방법
JP5231972B2 (ja) * 2008-12-18 2013-07-10 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080106345A1 (en) * 2006-11-03 2008-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage controlled oscillator with gain compensation
US20110286259A1 (en) * 2010-05-24 2011-11-24 Hewlett-Packard Development Company, L.P. Reading Memory Elements Within a Crossbar Array

Also Published As

Publication number Publication date
US20140078824A1 (en) 2014-03-20
JP2015531957A (ja) 2015-11-05
KR20150058408A (ko) 2015-05-28
US9129695B2 (en) 2015-09-08
EP2898512A1 (en) 2015-07-29
WO2014047114A1 (en) 2014-03-27

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150610