CN104701438A - 深紫外光源及其封装方法 - Google Patents
深紫外光源及其封装方法 Download PDFInfo
- Publication number
- CN104701438A CN104701438A CN201510117640.5A CN201510117640A CN104701438A CN 104701438 A CN104701438 A CN 104701438A CN 201510117640 A CN201510117640 A CN 201510117640A CN 104701438 A CN104701438 A CN 104701438A
- Authority
- CN
- China
- Prior art keywords
- deep
- emitting diode
- light
- ultraviolet light
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000012856 packing Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 8
- 239000010453 quartz Substances 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 241000894006 Bacteria Species 0.000 description 2
- 241000700605 Viruses Species 0.000 description 2
- 230000002147 killing effect Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006385 ozonation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/08—Radiation
- A61L2/10—Ultraviolet radiation
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2202/00—Aspects relating to methods or apparatus for disinfecting or sterilising materials or objects
- A61L2202/10—Apparatus features
- A61L2202/11—Apparatus for generating biocidal substances, e.g. vaporisers, UV lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Packaging Frangible Articles (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
Abstract
本发明公开了一种深紫外光源及其封装方法,深紫外光源,包括深紫外发光二极管和安装支架,深紫外发光二极管固定在安装支架上,深紫外发光二极管的外部设置有透明保护介质层,透明保护介质层在深紫外发光二极管的端面上形成凸起结构,透明保护介质层在深紫外发光二极管的侧面上形成凹陷结构。通过在深紫外发光二极管的端面形成凸起的透明保护介质层,并在侧面形成凹陷透明保护介质层,可以有效的改善侧面和正端面由于全反射带来的深紫外线损失,提高了紫外辐射剂量,提高了深紫外光源的透光效率;另外,采用透明保护介质层对深紫外发光二极管进行保护,而无需采用石英透镜,有效的降低了封装成本。
Description
技术领域
本发明涉及紫外光源,尤其涉及一种深紫外光源及其封装方法。
背景技术
外线对细菌、病毒的杀灭作用一般在几秒内完成,而对于传统氯气和臭氧消毒方法要达到紫外线的效果需要20分钟以上。紫外线消毒技术在所有消毒技术中,杀菌广谱性最高,几乎对所有的细菌、病毒都有高效杀灭作用。然而紫外线光源却十分缺少,目前普遍应用的紫外线光源主要是汞灯。而随着技术的进步,深紫外发光二极管具有功耗低、寿命长、无污染。相比较汞灯来讲,深紫外发光二极管波长是可以通过半导体材料生产工艺进行调整,通过波长的调整科学家发现深紫外线还有更广泛的应用例如皮肤治疗、军事遥感等。如图1所示,现有技术中采用深紫外发光二极管制成的深紫外光源通常将深紫外发光二极管101封装到金属管壳102中,金属管壳102的上方设置石英透镜103以调节发光角度。而采用石英透镜103,将对深紫外发光二极管101发生的紫外光造成严重的损失且封装成本较高。如何设计一种透光效率高且封装成本低的深紫外光源是本发明所要解决的技术问题。
发明内容
本发明提供了一种深紫外光源及其封装方法,实现提高深紫外光源的透光效率并降低封装成本。
为解决上述技术问题,本发明采用以下技术方案予以实现:
一种深紫外光源,包括深紫外发光二极管和安装支架,所述深紫外发光二极管固定在所述安装支架上,所述深紫外发光二极管的外部设置有透明保护介质层,所述透明保护介质层在所述深紫外发光二极管的端面上形成凸起结构,所述透明保护介质层在所述深紫外发光二极管的侧面上形成凹陷结构。
进一步的,所述安装支架上形成安装槽,所述深紫外发光二极管位于所述安装槽中,所述深紫外发光二极管的侧面与所述安装槽的侧面之间形成环形空间,所述透明保护介质层在所述环形空间中形成所述凹陷结构。
进一步的,所述安装支架上设置有两个电极端子,所述深紫外发光二极管的电极与对应的所述电极端子连接。
进一步的,所述深紫外发光二极管和所述安装支架之间还设置有热沉。
进一步的,所述透明保护介质层为树脂或硅胶。
本发明还提供一种深紫外光源的封装方法,对上述深紫外光源进行封装,具体方法为:将深紫外发光二极管放置在安装支架上后,向深紫外发光二极管的端面上滴上液态透明介质,通过重力作用,液态透明介质缓慢浸润到深紫外发光二极管的的侧面以及安装支架上,在表面张力的作用下,在深紫外发光二极管的端面形成凸起结构的透明保护介质层,并在深紫外发光二极管的侧面上形成凹陷结构的透明保护介质层。
与现有技术相比,本发明的优点和积极效果是:本发明提供的深紫外光源及其封装方法,通过在深紫外发光二极管的端面形成凸起的透明保护介质层,并在侧面形成凹陷透明保护介质层,可以有效的改善侧面和正端面由于全反射带来的深紫外线损失,提高了紫外辐射剂量,提高了深紫外光源的透光效率;另外,采用透明保护介质层对深紫外发光二极管进行保护,而无需采用石英透镜,有效的降低了封装成本。
结合附图阅读本发明的具体实施方式后,本发明的其他特点和优点将变得更加清楚。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术中深紫外光源的封装示意图;
图2为本发明深紫外光源实施例的结构示意图一;
图3为本发明深紫外光源实施例的结构示意图二。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图2所示,本实施例深紫外光源,包括深紫外发光二极管1和安装支架2,所述深紫外发光二极管1固定在所述安装支架2上,所述深紫外发光二极管1的外部设置有透明保护介质层3,所述透明保护介质层3在所述深紫外发光二极管1的端面上形成凸起结构31,所述透明保护介质层3在所述深紫外发光二极管1的侧面上形成凹陷结构32。
具体而言,本实施例深紫外光源中的深紫外发光二极管1固定在安装支架2上,而为了对深紫外发光二极管1进行保护,采用在深紫外发光二极管1外设置透明保护介质层3来代替现有技术中的石英透镜,其中,透明保护介质层3将在深紫外发光二极管1端面和侧面分别形成凸起结构31和凹陷结构32。在深紫外发光二极管1进行发光过程中,由于深紫外发光二极管1的端面具有凸起结构31,凸起结构31的凸面将缩小入射角,此时,深紫外发光二极管1发出的光线可以被凸起结构31折射到空气中,以增大发光功率;另外,由于深紫外发光二极管1的侧面具有凹陷结构32,凹陷结构32的凹面也将缩小深紫外发光二极管1在侧面的入射角,此时,深紫外发光二极管1发出的光线可以被凹陷结构32折射到空气中,以进一步的增大发光功率。
优选的,安装支架2上形成安装槽(未图示),所述深紫外发光二极管1位于所述安装槽中,所述深紫外发光二极管1的侧面与所述安装槽2的侧面之间形成环形空间(未图示),所述透明保护介质层3在所述环形空间中形成所述凹陷结构32。具体的,通过在环形空间中形成凹陷结构32,可以有效的增大凹陷结构32所形成的凹面的曲率,以使得侧面入射角小于临界角,从而进一步的增大侧面的出光率。
其中,所述安装支架2上设置有两个电极端子21,所述深紫外发光二极管1的电极11与对应的所述电极端子21连接。而透明保护介质层3为树脂或硅胶等透明材质 。
另外,本实施例中的深紫外发光二极管1可以直接固定在安装支架2上,或者,如图3所示,深紫外发光二极管1和所述安装支架2之间还设置有热沉3。
本实施例深紫外光源,通过在深紫外发光二极管的端面形成凸起的透明保护介质层,并在侧面形成凹陷透明保护介质层,可以有效的改善侧面和正端面由于全反射带来的深紫外线损失,提高了紫外辐射剂量,提高了深紫外光源的透光效率;另外,采用透明保护介质层对深紫外发光二极管进行保护,而无需采用石英透镜,有效的降低了封装成本。
本实施例深紫外光源的封装方法具体为:将深紫外发光二极管放置在安装支架上后,向深紫外发光二极管的端面上滴上液态透明介质,通过重力作用,液态透明介质缓慢浸润到深紫外发光二极管的的侧面以及安装支架上,在表面张力的作用下,在深紫外发光二极管的端面形成凸起结构的透明保护介质层,并在深紫外发光二极管的侧面上形成凹陷结构的透明保护介质层。
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。
Claims (6)
1.一种深紫外光源,其特征在于,包括深紫外发光二极管和安装支架,所述深紫外发光二极管固定在所述安装支架上,所述深紫外发光二极管的外部设置有透明保护介质层,所述透明保护介质层在所述深紫外发光二极管的端面上形成凸起结构,所述透明保护介质层在所述深紫外发光二极管的侧面上形成凹陷结构。
2. 根据权利要求1所述的深紫外光源,其特征在于,所述安装支架上形成安装槽,所述深紫外发光二极管位于所述安装槽中,所述深紫外发光二极管的侧面与所述安装槽的侧面之间形成环形空间,所述透明保护介质层在所述环形空间中形成所述凹陷结构。
3. 根据权利要求1所述的深紫外光源,其特征在于,所述安装支架上设置有两个电极端子,所述深紫外发光二极管的电极与对应的所述电极端子连接。
4. 根据权利要求1所述的深紫外光源,其特征在于,所述深紫外发光二极管和所述安装支架之间还设置有热沉。
5. 根据权利要求1所述的深紫外光源,其特征在于,所述透明保护介质层为树脂或硅胶。
6. 一种深紫外光源的封装方法,其特征在于,对如权利要求1-5任一所述的深紫外光源进行封装,具体方法为:将深紫外发光二极管放置在安装支架上后,向深紫外发光二极管的端面上滴上液态透明介质,通过重力作用,液态透明介质缓慢浸润到深紫外发光二极管的的侧面以及安装支架上,在表面张力的作用下,在深紫外发光二极管的端面形成凸起结构的透明保护介质层,并在深紫外发光二极管的侧面上形成凹陷结构的透明保护介质层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510117640.5A CN104701438B (zh) | 2015-03-18 | 2015-03-18 | 深紫外光源及其封装方法 |
US15/559,359 US20180248086A1 (en) | 2015-03-18 | 2016-03-17 | Deep ultraviolet light source and packaging method therefor |
PCT/CN2016/076559 WO2016146068A1 (zh) | 2015-03-18 | 2016-03-17 | 深紫外光源及其封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510117640.5A CN104701438B (zh) | 2015-03-18 | 2015-03-18 | 深紫外光源及其封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104701438A true CN104701438A (zh) | 2015-06-10 |
CN104701438B CN104701438B (zh) | 2017-11-03 |
Family
ID=53348358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510117640.5A Expired - Fee Related CN104701438B (zh) | 2015-03-18 | 2015-03-18 | 深紫外光源及其封装方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180248086A1 (zh) |
CN (1) | CN104701438B (zh) |
WO (1) | WO2016146068A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016146068A1 (zh) * | 2015-03-18 | 2016-09-22 | 青岛杰生电气有限公司 | 深紫外光源及其封装方法 |
CN107256911A (zh) * | 2017-05-31 | 2017-10-17 | 中国科学院半导体研究所 | 芯片尺寸级深紫外发光二极管共晶封装方法 |
CN108257928A (zh) * | 2017-12-26 | 2018-07-06 | 佛山市南海区联合广东新光源产业创新中心 | 一种新型深紫外led封装结构 |
CN109087982A (zh) * | 2017-06-14 | 2018-12-25 | 光宝光电(常州)有限公司 | 紫外线发光二极管封装结构及其制造方法 |
CN113725343A (zh) * | 2021-09-01 | 2021-11-30 | 深圳市佑明光电有限公司 | 一种高效深紫外led光源封装结构及其封装方法 |
US11362242B2 (en) | 2019-01-24 | 2022-06-14 | Lextar Electronics Corporation | Light-emitting device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11522108B2 (en) * | 2017-06-14 | 2022-12-06 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Package structure |
CN114904022A (zh) * | 2022-03-23 | 2022-08-16 | 厦门大学 | 一种大面积深紫外固态面光源及杀菌装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07307492A (ja) * | 1994-05-11 | 1995-11-21 | Mitsubishi Cable Ind Ltd | Led集合体モジュールおよびその作製方法 |
CN102244155A (zh) * | 2011-06-08 | 2011-11-16 | 徐晓峰 | 一种集成led光源曲面封装方法 |
CN102468407A (zh) * | 2010-11-17 | 2012-05-23 | 青岛杰生电气有限公司 | 一种紫外发光二极管 |
CN204441329U (zh) * | 2015-03-18 | 2015-07-01 | 青岛杰生电气有限公司 | 深紫外光源 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006011713A1 (de) * | 2006-03-14 | 2007-10-04 | Moeller Gmbh | Elektrische Auslöseeinheit für einen Motorschutzschalter eines Elektromotors |
CN100533796C (zh) * | 2008-05-05 | 2009-08-26 | 陆耘 | 光线发散显色良好的发光二极管 |
CN101567413A (zh) * | 2009-05-28 | 2009-10-28 | 旭丽电子(广州)有限公司 | 发光二极管 |
US20100276712A1 (en) * | 2009-11-03 | 2010-11-04 | Alexander Shaikevitch | Light emitting diode with thin multilayer phosphor film |
JP5861636B2 (ja) * | 2010-08-31 | 2016-02-16 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
CN102130277B (zh) * | 2010-12-31 | 2013-06-05 | 昆山琉明光电有限公司 | 一种发光二极管封装 |
WO2013133594A1 (en) * | 2012-03-05 | 2013-09-12 | Seoul Opto Device Co., Ltd. | Light-emitting device and method of manufacturing the same |
WO2014178288A1 (ja) * | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
JP6107475B2 (ja) * | 2013-06-28 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置 |
JP6515716B2 (ja) * | 2014-07-18 | 2019-05-22 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
CN104701438B (zh) * | 2015-03-18 | 2017-11-03 | 青岛杰生电气有限公司 | 深紫外光源及其封装方法 |
-
2015
- 2015-03-18 CN CN201510117640.5A patent/CN104701438B/zh not_active Expired - Fee Related
-
2016
- 2016-03-17 WO PCT/CN2016/076559 patent/WO2016146068A1/zh active Application Filing
- 2016-03-17 US US15/559,359 patent/US20180248086A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07307492A (ja) * | 1994-05-11 | 1995-11-21 | Mitsubishi Cable Ind Ltd | Led集合体モジュールおよびその作製方法 |
CN102468407A (zh) * | 2010-11-17 | 2012-05-23 | 青岛杰生电气有限公司 | 一种紫外发光二极管 |
CN102244155A (zh) * | 2011-06-08 | 2011-11-16 | 徐晓峰 | 一种集成led光源曲面封装方法 |
CN204441329U (zh) * | 2015-03-18 | 2015-07-01 | 青岛杰生电气有限公司 | 深紫外光源 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016146068A1 (zh) * | 2015-03-18 | 2016-09-22 | 青岛杰生电气有限公司 | 深紫外光源及其封装方法 |
CN107256911A (zh) * | 2017-05-31 | 2017-10-17 | 中国科学院半导体研究所 | 芯片尺寸级深紫外发光二极管共晶封装方法 |
CN107256911B (zh) * | 2017-05-31 | 2019-07-23 | 中国科学院半导体研究所 | 芯片尺寸级深紫外发光二极管共晶封装方法 |
CN109087982A (zh) * | 2017-06-14 | 2018-12-25 | 光宝光电(常州)有限公司 | 紫外线发光二极管封装结构及其制造方法 |
US10916685B2 (en) | 2017-06-14 | 2021-02-09 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Package structure and manufacturing method thereof |
CN109087982B (zh) * | 2017-06-14 | 2021-04-30 | 光宝光电(常州)有限公司 | 紫外线发光二极管封装结构及其制造方法 |
CN108257928A (zh) * | 2017-12-26 | 2018-07-06 | 佛山市南海区联合广东新光源产业创新中心 | 一种新型深紫外led封装结构 |
CN108257928B (zh) * | 2017-12-26 | 2020-05-22 | 佛山市南海区联合广东新光源产业创新中心 | 一种新型深紫外led封装结构 |
US11362242B2 (en) | 2019-01-24 | 2022-06-14 | Lextar Electronics Corporation | Light-emitting device |
CN113725343A (zh) * | 2021-09-01 | 2021-11-30 | 深圳市佑明光电有限公司 | 一种高效深紫外led光源封装结构及其封装方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104701438B (zh) | 2017-11-03 |
US20180248086A1 (en) | 2018-08-30 |
WO2016146068A1 (zh) | 2016-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104701438A (zh) | 深紫外光源及其封装方法 | |
US20170338388A1 (en) | Ultraviolet light-emitting diode packaging structure | |
CN204441329U (zh) | 深紫外光源 | |
KR20130048159A (ko) | 발광 다이오드 | |
US9978917B1 (en) | Light-emitting diode package structure having plane light source and method for manufacturing the same | |
CN108550677A (zh) | 一种紫外led封装器件 | |
CN107342353A (zh) | 一种聚焦紫外led封装结构及其制备方法 | |
CN102983245A (zh) | 一种紫外发光二极管的封装结构 | |
CN105390592A (zh) | 一种紫外led光源三层封装方法 | |
TWI686966B (zh) | 紫外線發光二極體元件之封裝結構 | |
CN111029452A (zh) | 一种紫外发光二极管封装结构及其封装方法、和紫外灯 | |
CN107369676B (zh) | 一种紫外led模组结构 | |
CN208000934U (zh) | 一种紫外led封装器件 | |
CN104157769B (zh) | 发光二极管封装结构 | |
CN103050582A (zh) | 具胶墙的发光二极管封装方法 | |
CN106299042A (zh) | 一种紫外led光源无机封装方法 | |
CN204062599U (zh) | Led模压玻璃镜片 | |
US10840051B2 (en) | Extraction structure for a UV lamp | |
CN202993059U (zh) | 用于紫外led准直的透镜 | |
TW201327772A (zh) | 發光二極體封裝結構及封裝方法 | |
CN104124326B (zh) | 半导体发光器件光学封装结构 | |
CN201910442U (zh) | 紫外大功率led器件 | |
CN203562445U (zh) | 一种光性能改进led封装结构 | |
US20130256718A1 (en) | Light emitting device and manufacturing method thereof | |
CN206163518U (zh) | 一种紫外led器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171103 |
|
CF01 | Termination of patent right due to non-payment of annual fee |