CN104681700A - LED luminous structure and manufacturing method thereof - Google Patents
LED luminous structure and manufacturing method thereof Download PDFInfo
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- CN104681700A CN104681700A CN201510094465.2A CN201510094465A CN104681700A CN 104681700 A CN104681700 A CN 104681700A CN 201510094465 A CN201510094465 A CN 201510094465A CN 104681700 A CN104681700 A CN 104681700A
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- 238000000034 method Methods 0.000 claims description 23
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- 229920000647 polyepoxide Polymers 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 16
- 238000012536 packaging technology Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052759 nickel Inorganic materials 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED luminous structure and a manufacturing method thereof. A hemi-spherical light reflecting body is fixed to the back surface of a transparent fixed plate, so that an LED chip is positioned in a sphere center of the hemi-spherical light reflecting body; a convex surface light gathering body is formed at the upper part of the front surface of the transparent fixed plate through a packaging process, so that the LED chip is positioned at a focus point of the convex surface of the convex surface light gathering body. The LED chip is positioned on the focus point of the convex surface of the convex surface light gathering body, so that the light emitted upwards by the LED chip emits as parallel light; moreover, the LED chip is also positioned in the sphere center of the hemi-spherical light reflecting body, so that the light emitted downwards can still return along the original path after being reflected by the hemi-spherical light reflecting body, is gathered at the focus point of the convex surface light gathering body, and is emitted as the parallel light after continuing spreading to pass through the convex surface light gathering body; therefore, the LED luminous structure can emit the parallel light or approximately parallel light and can replace laser to play a better role in certain fields.
Description
Technical field
The present invention relates to semiconductor optoelectronic field of chip manufacture technology, particularly a kind of LED ray structure and preparation method thereof.
Background technology
Since early 1990s commercialization, through the development of twenties years, GaN base LED has been widely used in the fields such as indoor outer display screen, Projection Display lighting source, backlight, view brightening illumination, advertisement, traffic instruction, and is described as 21st century the most competitive solid light source of new generation.In recent years, in the excitation of the various policy of government with under promoting, the various technology for improving LED luminosity is arisen at the historic moment, and such as patterned substrate technology, sidewall coarsening technique, DBR technology, optimizes electrode structure, on substrate or nesa coating, makes 2 D photon crystal etc.Wherein patterned substrate technology most effect, between 2010 to 2012, the dry method patterned substrate of cone structure that front and back occur and the wet method pattern substrate of Pyramid instead of the main flow substrate that the smooth Sapphire Substrate in surface becomes LED chip completely, make the crystal structure of LED and luminosity be obtained for revolutionary raising.
The wavelength of the light that light emitting semiconductor device is launched depends on the band gap of the energy difference between the valence-band electrons of semi-conducting material used and conduction band electron, GaN material have wider can band gap (from 0.8eV to 6.2eV), so GaN base LED by mixing the wavelength of first light usually regulating GaN base LED to launch such as In, Al of variable concentrations in GaN epitaxy active layer growth course, realize the energy spectrum continuously adjustabe of GaN base LED, so in monochromaticjty, colorimetric purity, color saturation etc., GaN base LED can compare favourably with laser.
But compared with laser, the angle of divergence of the light that existing LED launches is much larger than the angle of divergence of laser, namely, laser is much better than LED in directivity, in order to adapt to the application of LED in different field, be necessary (namely light emission direction the is good) LED designing a kind of energy outgoing directional light, make its alternative laser, and play a role better in corresponding field.
Summary of the invention
The object of the present invention is to provide a kind of LED ray structure and preparation method thereof, to solve the poor problem of existing LED light emission direction.
For solving the problems of the technologies described above, the invention provides a kind of LED ray structure manufacture method, comprising:
One hemispherical refractive body is provided;
There is provided a transparent fixed head, described transparent fixed head front is provided with LED chip fixed area, and both sides, described LED chip fixed area respectively arrange a transparent conductive body;
Described hemispherical refractive body is fixed on the back side of described transparent fixed head, LED chip is fixed in described LED chip fixed area and is located on the centre of sphere of described hemispherical refractive body, described LED chip being formed with described transparent conductive body and is electrically connected;
Form convex surface condensing body by packaging technology at the upper front of described transparent fixed head, described LED chip is in the focus of described convex surface condensing body convex surface.
Optionally, in described LED ray structure manufacture method, the hemisphere that described hemispherical refractive body comprises hollow and the reflector layer be arranged on the hemisphere inwall of described hollow.
Optionally, in described LED ray structure manufacture method, on the hemispheroidal inwall of described hollow, form reflector layer by evaporation, sputtering or spraying coating process.
Optionally, in described LED ray structure manufacture method, the dorsal edge of described transparent fixed head is provided with the draw-in groove in order to fixing described hemispherical refractive body.
Optionally, in described LED ray structure manufacture method, described LED chip fixed area is provided with at least one aspirating hole, by the mode of vacuum suction, described LED chip is fixed in described LED chip fixed area.
Optionally, in described LED ray structure manufacture method, the material of described transparent conductive body is the one in ITO or nickel billon.
Optionally, in described LED ray structure manufacture method, the step forming convex surface condensing body at the upper front of described transparent fixed head by packaging technology comprises:
There is provided a cylindrical vessel, the bottom surface of described cylindrical vessel is convex surface;
Epoxide-resin glue is filled in described cylindrical vessel;
Described transparent fixed head is placed on described cylindrical vessel;
Make described epoxy resin adhesive curing; And
Take described cylindrical vessel away, the epoxide-resin glue after solidification is as described convex surface condensing body.
The present invention also provides a kind of LED ray structure, comprising: transparent fixed head, hemispherical refractive body, LED chip and convex surface condensing body; Described hemispherical refractive body is fixed on the back side of described transparent fixed head, and described convex surface condensing body is fixed on the upper front of described transparent fixed head by packaging technology; Described transparent fixed head front is provided with LED chip fixed area, both sides, described LED chip fixed area respectively arrange a transparent conductive body, described LED chip is fixed on to be formed in described LED chip fixed area and with described transparent conductive body and is electrically connected, further, described LED chip is in the focus of the convex surface of described convex surface condensing body and on the centre of sphere of described hemispherical refractive body.
Optionally, in described LED ray structure, the hemisphere that described hemispherical refractive body comprises hollow and the reflector layer be arranged on the hemisphere inwall of described hollow.
Optionally, in described LED ray structure, on the hemispheroidal inwall of described hollow, form reflector layer by evaporation, sputtering or spraying coating process.
Optionally, in described LED ray structure, the dorsal edge of described transparent fixed head is provided with the draw-in groove in order to fixing described hemispherical refractive body.
Optionally, in described LED ray structure, described LED chip fixed area is provided with at least one aspirating hole, by the mode of vacuum suction, described LED chip is fixed in described LED chip fixed area.
Optionally, in described LED ray structure, the material of described transparent conductive body is the one in ITO or nickel billon.
Optionally, in described LED ray structure, the step forming convex surface condensing body at the upper front of described transparent fixed head by packaging technology comprises:
There is provided a cylindrical vessel, the bottom surface of described cylindrical vessel is convex surface;
Epoxide-resin glue is filled in described cylindrical vessel;
Described transparent fixed head is placed on described cylindrical vessel;
Make described epoxy resin adhesive curing; And
Take described cylindrical vessel away, the epoxide-resin glue after solidification is as described convex surface condensing body.
In LED ray structure provided by the invention and preparation method thereof, hemispherical refractive body is fixed on the back side of transparent fixed head, make LED chip on the centre of sphere of hemispherical refractive body, and form convex surface condensing body by packaging technology at the upper front of transparent fixed head, make LED chip in the focus of described convex surface condensing body convex surface.Because described LED chip is in the focus of convex surface condensing body convex surface, thus its light launched upward becomes parallel light emergence, and, described LED chip is also positioned on the centre of sphere of hemispherical refractive body, thus the light launched down can also return along former road after the reflection of hemispherical refractive body, thus converge in the focus of convex surface condensing body, also parallel light emergence can be become after continuing to propagate through convex surface condensing body, so, described LED ray structure can emitting parallel light or connect subparallel light, replace laser in some field, can play a role better.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the LED ray structure manufacture method of the embodiment of the present invention;
Fig. 2 is the generalized section of the hemispherical configuration of the embodiment of the present invention;
Fig. 3 is the generalized section of the transparent fixed head of the embodiment of the present invention;
Fig. 4 is the schematic top plan view of the transparent fixed head of the embodiment of the present invention;
Fig. 5 is the generalized section after the transparent fixed head of the embodiment of the present invention and hemispherical configuration are fixed;
Fig. 6 is the generalized section that the LED chip of the embodiment of the present invention is fixed on transparent fixed head;
Fig. 7 is the generalized section that the LED chip of the embodiment of the present invention is electrically connected with transparent conductive body;
Fig. 8 is the generalized section of the cylindrical vessel of the embodiment of the present invention;
Fig. 9 is the generalized section that the cylindrical vessel of the embodiment of the present invention fills epoxide-resin glue;
Figure 10 is the generalized section that the transparent fixed head of the embodiment of the present invention is placed on cylindrical vessel;
Figure 11 is the generalized section after the convex surface condensing body of the embodiment of the present invention is formed;
Figure 12 is the luminous schematic diagram of the LED ray structure of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, LED ray structure that the present invention proposes and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, it is the schematic flow sheet of the LED ray structure manufacture method of the embodiment of the present invention.As shown in Figure 1, described LED ray structure manufacture method comprises:
Step S1: a hemispherical refractive body is provided;
Step S2: a transparent fixed head is provided, described transparent fixed head front is provided with LED chip fixed area, and both sides, described LED chip fixed area respectively arrange a transparent conductive body;
Step S3: the back side described hemispherical refractive body being fixed on described transparent fixed head, LED chip to be fixed in described LED chip fixed area and to be located on the centre of sphere of described hemispherical refractive body, described LED chip being formed with described transparent conductive body and is electrically connected;
Step S4: form convex surface condensing body by packaging technology at the upper front of described transparent fixed head, described LED chip is in the focus of described convex surface condensing body convex surface.
Concrete, please refer to Fig. 2 ~ Figure 11, the schematic diagram of the device architecture formed in the LED ray structure manufacture method that it is the embodiment of the present invention.
First, perform step S1, as shown in Figure 2, provide a hemispherical refractive body 10.The hemisphere 11 that described hemispherical refractive body 10 comprises hollow and the reflector layer 12 be arranged on hemisphere 11 inwall of described hollow.The material of the hemisphere 11 of described hollow can be rigid material such as copper, aluminium, aluminium alloy or pottery etc., also can be flexible material such as rubber etc.On the inwall of the hemisphere 11 of hollow, reflector layer 12 is formed by evaporation, sputtering or spraying coating process.Described reflector layer 12 can be at least one in high-reflectivity metal film or DBR film, and the material of the metal film of described high reflectance is such as silver or aluminium, and described DBR film is such as stacked film architecture that silica and iron oxide material alternating growth are formed.
Then, perform step S2, as shown in Figure 3 and Figure 4, one transparent fixed head 30 is provided, the front of described transparent fixed head 30 is provided with some LED chip fixed areas 31, described LED chip fixed area 31 is provided with at least one aspirating hole 33, both sides, described LED chip fixed area 31 respectively arrange a transparent conductive body 32.The dorsal edge of described transparent fixed head 30 is also provided with the draw-in groove 35 in order to fixing hemispherical refractive body 10.
The shape of described aspirating hole 33 can be square, circular or irregularly shaped, and the shape of the aspirating hole that the present invention does not limit and quantity, as long as can realize the object vacuumizing to adsorb LED chip.Described transparent conductive body 32 is preferably in strip, and the both sides of each LED chip fixed area 31 are respectively provided with the transparent conductive body 32 of a strip, and the material of described transparent conductive body 32 can be at least one in ITO or nickel billon.Described transparent conductive body 32 is embedded in described transparent fixed head 30, and in transparent fixed head 30 above described transparent conductive body 32, routing hole 34 is set, spilling partially transparent electric conductor 32 by routing hole 34 so that follow-up positive electrode with LED chip 20 and negative electrode are formed is electrically connected.
Then, perform step S3, as illustrated in figs. 5-7, described transparent fixed head 30 is fixed together with described hemispherical refractive body 10, LED chip 20 to be fixed in described LED chip fixed area 31 and LED chip 20 is positioned on the centre of sphere of hemispherical refractive body 10, then by routing technique, described LED chip 20 being formed with described transparent conductive body 32 to be electrically connected.
Specifically as shown in Figure 5, described hemispherical refractive body 10 is fixed together with described transparent fixed head 30 by the draw-in groove 35 that can be arranged by transparent fixed head 30 back side, also the mode such as can gluedd joint by alternate manner fixes transparent fixed head 30 and described hemispherical refractive body 10, and the present invention is to this and be not construed as limiting.
In the present embodiment, by vacuum action, LED chip 20 is fixed in described LED chip fixed area 31, and is located on the centre of sphere of hemispherical refractive body 10.First can vacuumize hemispherical refractive body 10 before placement LED chip 20, then LED chip 20 is positioned in LED chip fixed area 31, LED chip 20 can be fixed by vacuum action.Or, first LED chip 20 is positioned in LED chip fixed area 31, and then utilizes vaccum-pumping equipment to vacuumize hemispherical refractive body 10, also can realize the object of fixed L ED chip 20.
Then, perform step S4, form convex surface condensing body 50 by packaging technology at the upper front of described transparent fixed head 30, described LED chip is in the focus of described convex surface condensing body 50 convex surface.
In the present embodiment, the idiographic flow of described packaging technology is as follows:
As shown in Figure 8, there is provided a cylindrical vessel 40, the bottom surface 41 of described cylindrical vessel 40 is convex surface, and namely the mid portion degree of depth of described cylindrical vessel 40 is greater than the marginal portion degree of depth, further, the basal diameter of described cylindrical vessel 40 equals or slightly larger than the diameter of described hemispherical refractive body 10;
As shown in Figure 9, epoxide-resin glue 42 is injected described cylindrical vessel 40 until fill;
As shown in Figure 10, described epoxide-resin glue 42 is aimed in the front of described transparent fixed head 30, by LED chip 20, transparent fixed head 30 and hemispherical refractive body 10 integrally back-off be positioned on described cylindrical vessel 40;
As shown in figure 11, by heated baking technique, described epoxide-resin glue 42 is fully solidified, thus make epoxide-resin glue 42 and LED chip 20, transparent fixed head 30 and hemispherical refractive body 10 are fixed together, after solidification, epoxide-resin glue 42 is separated with described cylindrical vessel 40, because cylindrical vessel 40 bottom surface is convex surface, thus define the surface of the epoxide-resin glue after solidification away from described transparent fixed head 30 also for convex surface, after taking cylindrical vessel 40 away, namely epoxide-resin glue after solidification can be used as convex surface condensing body 50, LED chip 20 is made to be in the focus of the convex surface of convex surface condensing body 50 by adjusting the described height of convex surface condensing body 50 with the radius of curvature of its convex surface.
The present embodiment also provides a kind of LED ray structure, mainly please refer to Figure 12, accordingly can with reference to figure 2 ~ Figure 11, and described LED ray structure comprises: transparent fixed head 30, hemispherical refractive body 10, LED chip 20 and convex surface condensing body 50; Described hemispherical refractive body 10 is fixed on the back side of described transparent fixed head 30, and described convex surface condensing body 50 is fixed on the upper front of described transparent fixed head 30 by packaging technology; Described transparent fixed head 30 front is provided with LED chip fixed area 31, both sides, described LED chip fixed area 31 respectively arrange a transparent conductive body 32, described LED chip to be fixed in described LED chip fixed area 31 and to be formed with the transparent conductive body 32 of its both sides and is electrically connected, further, described LED chip is in the focus of described convex surface condensing body 50 convex surface and on the centre of sphere of described hemispherical refractive body 10.
In sum, LED ray structure provided by the invention and preparation method thereof, hemispherical refractive body is fixed on the back side of transparent fixed head, make LED chip on the centre of sphere of hemispherical refractive body, and form convex surface condensing body by packaging technology at the upper front of transparent fixed head, make LED chip in the focus of described convex surface condensing body convex surface.Because described LED chip is in the focus of convex surface condensing body convex surface, thus its light launched upward becomes parallel light emergence, and, described LED chip is also positioned on the centre of sphere of hemispherical refractive body, thus the light launched down can also return along former road after the reflection of hemispherical refractive body, thus converge in the focus of convex surface condensing body, also parallel light emergence can be become after continuing to propagate through convex surface condensing body, so, described LED ray structure can emitting parallel light or connect subparallel light, replace laser in some field, can play a role better.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (14)
1. a LED ray structure manufacture method, is characterized in that, comprising:
One hemispherical refractive body is provided;
There is provided a transparent fixed head, described transparent fixed head front is provided with LED chip fixed area, and both sides, described LED chip fixed area respectively arrange a transparent conductive body;
Described hemispherical refractive body is fixed on the back side of described transparent fixed head, LED chip is fixed in described LED chip fixed area and is located on the centre of sphere of described hemispherical refractive body, described LED chip being formed with described transparent conductive body and is electrically connected;
Form convex surface condensing body by packaging technology at the upper front of described transparent fixed head, described LED chip is in the focus of described convex surface condensing body convex surface.
2. LED ray structure manufacture method as claimed in claim 1, is characterized in that, the hemisphere that described hemispherical refractive body comprises hollow and the reflector layer be arranged on the hemisphere inwall of described hollow.
3. LED ray structure manufacture method as claimed in claim 2, is characterized in that, forms reflector layer by evaporation, sputtering or spraying coating process on the hemispheroidal inwall of described hollow.
4. LED ray structure manufacture method as claimed in claim 1, is characterized in that, the dorsal edge of described transparent fixed head is provided with the draw-in groove in order to fixing described hemispherical refractive body.
5. LED ray structure manufacture method as claimed in claim 1, be is characterized in that, described LED chip fixed area is provided with at least one aspirating hole, be fixed in described LED chip fixed area by described LED chip by the mode of vacuum suction.
6. LED ray structure manufacture method as claimed in claim 1, is characterized in that, the material of described transparent conductive body is the one in ITO or nickel billon.
7. LED ray structure manufacture method as claimed in claim 1, is characterized in that, the step forming convex surface condensing body at the upper front of described transparent fixed head by packaging technology comprises:
There is provided a cylindrical vessel, the bottom surface of described cylindrical vessel is convex surface;
Epoxide-resin glue is filled in described cylindrical vessel;
Described transparent fixed head is placed on described cylindrical vessel;
Make described epoxy resin adhesive curing; And
Take described cylindrical vessel away, the epoxide-resin glue after solidification is as described convex surface condensing body.
8. a LED ray structure, is characterized in that, comprising: transparent fixed head, hemispherical refractive body, LED chip and convex surface condensing body; Described hemispherical refractive body is fixed on the back side of described transparent fixed head, and described convex surface condensing body is fixed on the upper front of described transparent fixed head by packaging technology; Described transparent fixed head front is provided with LED chip fixed area, both sides, described LED chip fixed area respectively arrange a transparent conductive body, described LED chip is fixed on to be formed in described LED chip fixed area and with described transparent conductive body and is electrically connected, further, described LED chip is in the focus of the convex surface of described convex surface condensing body and on the centre of sphere of described hemispherical refractive body.
9. LED ray structure as claimed in claim 8, is characterized in that, the hemisphere that described hemispherical refractive body comprises hollow and the reflector layer be arranged on the hemisphere inwall of described hollow.
10. LED ray structure as claimed in claim 9, is characterized in that, forms reflector layer by evaporation, sputtering or spraying coating process on the hemispheroidal inwall of described hollow.
11. LED ray structures as claimed in claim 8, is characterized in that, the dorsal edge of described transparent fixed head is provided with the draw-in groove in order to fixing described hemispherical refractive body.
12. LED ray structures as claimed in claim 8, is characterized in that, described LED chip fixed area is provided with at least one aspirating hole, are fixed in described LED chip fixed area by described LED chip by the mode of vacuum suction.
13. LED ray structures as claimed in claim 8, is characterized in that, the material of described transparent conductive body is the one in ITO or nickel billon.
14. LED ray structures as claimed in claim 8, is characterized in that, the step forming convex surface condensing body at the upper front of described transparent fixed head by packaging technology comprises:
There is provided a cylindrical vessel, the bottom surface of described cylindrical vessel is convex surface;
Epoxide-resin glue is filled in described cylindrical vessel;
Described transparent fixed head is placed on described cylindrical vessel;
Make described epoxy resin adhesive curing; And
Take described cylindrical vessel away, the epoxide-resin glue after solidification is as described convex surface condensing body.
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| CN201510094465.2A CN104681700B (en) | 2015-03-03 | 2015-03-03 | LED ray structures and preparation method thereof |
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| CN201510094465.2A CN104681700B (en) | 2015-03-03 | 2015-03-03 | LED ray structures and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161603A (en) * | 2015-10-22 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | All-dimension luminous spherical LED spot light source packaging structure and preparation method thereof |
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| JPH10335706A (en) * | 1997-05-30 | 1998-12-18 | Toyoda Gosei Co Ltd | Light emitting diode lamp |
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| CN204481049U (en) * | 2015-03-03 | 2015-07-15 | 杭州士兰明芯科技有限公司 | LED ray structure |
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| CN105161603A (en) * | 2015-10-22 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | All-dimension luminous spherical LED spot light source packaging structure and preparation method thereof |
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| CN104681700B (en) | 2017-06-16 |
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